Wafer electroplating equipment

Abstract

The utility model relates to a wafer electroplating device. The wafer electroplating device comprises: a storage chamber for storing a warm-up plate; a plating chamber located outside the storage chamber, wherein the plating chamber has a plating structure, wherein the plating structure is used to form a metal plating layer on the surface of the warm-up plate; a cleaning chamber located outside the plating chamber, wherein the cleaning chamber has a cleaning structure, wherein the cleaning structure is used to remove the metal plating layer on the surface of the warm-up plate. The utility model not only simplifies the cleaning operation of the warm-up plate, reduces the occupation of other cleaning machines or measuring machines, but also improves the cleaning efficiency of the warm-up plate.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a wafer electroplating device. Background Art

[0002] In the semiconductor manufacturing process, electroplating is the main process to complete metal filling. During the electroplating process, after the electroplating voltage is applied, a current is generated in the electroplating solution and an electric field is formed. Metal ions and electrons combine to form a metal coating on the surface of the wafer. The main purpose of the electroplating process is to deposit a dense, hole-free, gap-free and evenly distributed metal coating on the surface of the wafer.

[0003] In order to achieve the purpose of electroplating metal and ensure that the formed metal coating meets the thickness distribution, reliability, filling performance and defect requirements required by the process, it is necessary to perform warm-up operations such as removing the influence of the first-piece effect, eliminating bubbles in the liquid pipeline and confirming the liquid flow rate before electroplating the product wafer. In the warm-up operation, a wafer used as a warm-up plate is usually used to run the electroplating process to warm up the electroplating machine. After the warm-up plate is recycled for many times, it needs to be wet-cleaned, and the warm-up plate after wet cleaning is measured to meet the needs of the next warm-up operation. However, there is no structural position for storing the warm-up plate in the current electroplating machine. Therefore, when cleaning the warm-up plate, it is necessary to manually take and put the warm-up plate to the electroplating machine frequently, and use a separate cleaning machine outside the electroplating machine to clean the warm-up plate, and after cleaning, a separate measuring machine needs to be used to measure the film thickness and evaluate the cleaning effect. This process is not only cumbersome to operate, resulting in a reduction in the electroplating effect and a reduction in the production capacity of the electroplating machine, but also increases the probability of contamination of the electroplating chamber and the warm-up plate.

[0004] Therefore, how to improve the electroplating efficiency of the wafer electroplating device to increase the production capacity of the wafer electroplating device, while reducing the probability of contamination during the electroplating process, thereby improving the electroplating effect, is a technical problem that needs to be solved urgently. Summary of the invention

[0005] The utility model provides a wafer electroplating device, which is used to improve the electroplating efficiency of the wafer electroplating device to improve the production capacity of the wafer electroplating device, while reducing the probability of contamination during the electroplating process, thereby improving the electroplating effect.

[0006] According to some embodiments, the utility model provides a wafer electroplating device, comprising:

[0007] A storage chamber for storing warm-up sheets;

[0008] An electroplating chamber, located outside the storage chamber, wherein an electroplating structure is provided in the electroplating chamber, and wherein the electroplating structure is used to form a metal electroplating layer on the surface of the warm-up plate;

[0009] A cleaning chamber is located outside the electroplating chamber. A cleaning structure is provided in the cleaning chamber. The cleaning structure is used to remove the metal electroplating layer on the surface of the warm-up plate.

[0010] In some embodiments, the storage chamber includes a plurality of sub-chambers corresponding one-to-one to the plurality of electroplating chambers, and each of the sub-chambers is used to store at least one of the warm-up sheets.

[0011] In some embodiments, it also includes:

[0012] The annealing chamber is used to anneal the warm-up plate that forms the metal electroplating layer, and the storage chamber is located above the annealing chamber.

[0013] In some embodiments, the heater plate includes a substrate and a diffusion barrier layer located on the substrate, the diffusion barrier layer is a conductor, and a material of the diffusion barrier layer is different from a material of the metal electroplating layer.

[0014] In some embodiments, the material of the diffusion barrier layer includes ruthenium.

[0015] In some embodiments, the cleaning structure comprises:

[0016] A carrier, located in the cleaning chamber, the carrier comprising a carrier surface for carrying the warm-up plate formed with the metal electroplating layer, and a first driver capable of driving the warm-up plate to rotate;

[0017] A first nozzle is located in the cleaning chamber, and the first nozzle can at least spray cleaning liquid toward the center of the warm-up plate on the supporting platform.

[0018] In some embodiments, the cleaning structure further comprises:

[0019] A connecting arm, one end of which is connected to the edge of the supporting platform and the other end of which is connected to the first nozzle, wherein the length of the projection of the connecting arm on the supporting surface is greater than the radius of the warm-up plate;

[0020] A second driver is connected to the connecting arm, and the second driver is used to drive the connecting arm to swing back and forth in a plane parallel to the bearing surface.

[0021] In some embodiments, the cleaning structure further comprises:

[0022] The second nozzle is located on the supporting platform, and the first nozzle and the second nozzle are distributed at two opposite ends of the supporting platform. The second nozzle can spray cleaning liquid to the edge of the warm-up plate on the supporting platform.

[0023] In some embodiments, it also includes:

[0024] A first robotic arm, the electroplating chamber, the cleaning chamber and the storage chamber are distributed together around the periphery of the first robotic arm, and the first robotic arm is used to transfer the warm-up plate between the electroplating chamber, the cleaning chamber and the storage chamber.

[0025] In some embodiments, it also includes:

[0026] A memory, used for storing and recording the number of times the warm-up plate in the storage chamber performs a warm-up operation;

[0027] The controller is connected to the memory and is used to determine whether the number of times the warm-up operation of the warm-up plate has reached a threshold. If so, the warm-up plate is transferred to the cleaning chamber and the metal plating layer on the surface of the warm-up plate is removed.

[0028] The wafer electroplating device provided by the utility model provides a storage chamber, an electroplating chamber and a cleaning chamber which are independent of each other inside the wafer electroplating device, uses the storage chamber to store the warm-up plate used for the warm-up operation, and uses the warm-up plate to perform the electroplating process in the electroplating chamber to eliminate the influence of the first-piece effect and the like, thereby effectively improving the electroplating effect of the wafer electroplating device on the product wafer. Moreover, the cleaning chamber inside the wafer device can be used to clean the warm-up plate, so that there is no need to frequently take the warm-up plate out of the wafer electroplating device, which not only simplifies the cleaning operation of the warm-up plate and reduces the occupation of other cleaning machines or measuring machines, but also improves the cleaning efficiency of the warm-up plate, thereby improving the electroplating efficiency and production capacity of the wafer electroplating device. In addition, since there is no need to frequently take the warm-up plate out of the wafer electroplating device, the probability of contamination of the warm-up plate and the electroplating chamber is reduced, which helps to further improve the electroplating effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Attached Figure 1 It is a top view schematic diagram of a wafer electroplating device in a specific embodiment of the utility model;

[0030] Attached Figure 2 It is a structural schematic diagram of a storage chamber in a specific embodiment of the utility model;

[0031] Attached Figure 3 It is a structural schematic diagram of a warm-up plate in a specific implementation mode of the utility model;

[0032] Attached Figure 4 It is a structural schematic diagram of a cleaning chamber of a specific embodiment of the utility model when cleaning a warm-up plate;

[0033] Attached Figure 5 It is another structural schematic diagram of the cleaning chamber of the specific implementation mode of the utility model when cleaning the warm-up plate. DETAILED DESCRIPTION

[0034] The specific implementation of the wafer electroplating device provided by the utility model is described in detail below with reference to the accompanying drawings.

[0035] This specific embodiment provides a wafer electroplating device, Figure 1 Schematic diagram of a top view of a wafer electroplating device in a specific embodiment of the utility model, Figure 2 is a schematic diagram of the structure of the storage chamber in a specific embodiment of the utility model, Figure 4 This is a schematic diagram of the structure of the cleaning chamber of the utility model when cleaning the warm-up plate, Figure 5 This is another structural schematic diagram of the cleaning chamber of the specific embodiment of the utility model when cleaning the warm-up plate. Figure 1 , Figure 2 , Figure 4 and Figure 5 As shown, the wafer electroplating device comprises:

[0036] The storage chamber 12 is used to store the warm-up sheet 20;

[0037] The electroplating chamber 10 is located outside the storage chamber 12. The electroplating chamber 10 has an electroplating structure, and the electroplating structure is used to form a metal electroplating layer on the surface of the warm-up plate 20;

[0038] The cleaning chamber 11 is located outside the electroplating chamber 10 . The cleaning chamber 11 has a cleaning structure therein. The cleaning structure is used to remove the metal electroplating layer 40 on the surface of the warm-up plate 20 .

[0039] Specifically, the warm-up plate 20 is a test wafer used for warm-up operation before the product wafer enters the wafer electroplating device for electroplating, in order to remove the influence of the first-piece effect, eliminate bubbles in the liquid pipeline, and confirm factors such as liquid flow. Any two of the storage chamber 12, the electroplating chamber 10 and the cleaning chamber 11 in the wafer electroplating device are relatively independently arranged. The electroplating structure in the electroplating chamber 10 is used to implement the electroplating process on the warm-up plate 20 and the product wafer. The cleaning structure in the cleaning chamber 11 is also used to perform an edge washing process on the product wafer after the electroplating process (i.e., remove impurities on the edge of the product wafer). The wafer electroplating device is also provided with a loading port 13 for loading the product wafer and the warm-up plate 20, and a second robot arm 14 for transferring the product wafer and the warm-up plate 20. In one example, after the warm-up plate 20 arrives at the loading port 13, the second robot arm 14 transfers the warm-up plate 20 from the loading port 13 to the storage chamber 12 for storage. During the warm-up operation, the warm-up plate 20 is taken out from the storage chamber 12 and placed in the electroplating chamber 10, and the warm-up plate 20 is subjected to an electroplating process by the electroplating structure in the electroplating chamber 10 to form the metal electroplating layer 40 covering the surface of the warm-up plate 20. In one example, the material of the metal electroplating layer 40 is metallic copper. After each warm-up operation is completed, the warm-up plate 20 is transferred to the storage chamber 12 again for storage, awaiting the next warm-up operation. After performing the warm-up operation multiple times, the warm-up plate 20 covered with the metal electroplating layer 40 needs to be transferred to the cleaning chamber 11. The cleaning structure in the cleaning chamber 11 performs a cleaning process on the warm-up plate 20 to remove the metal plating layer 40 covering the surface of the warm-up plate 20, thereby realizing the recycling of the warm-up plate 20. After the cleaning process is completed, the warm-up plate 20 with the metal plating layer 40 removed is transferred to the storage chamber 12 for storage again.

[0040] In this specific embodiment, the storage chamber 12 for storing the warm-up plate 20 is provided inside the wafer electroplating device. After the warm-up plate 20 is used multiple times, it is not necessary to take the warm-up plate 20 out of the wafer electroplating device. Instead, the warm-up plate 20 is directly cleaned in the cleaning chamber 11 in the wafer electroplating device to remove the metal electroplating layer 40 covering the surface of the warm-up plate 20. Since there is no need to frequently take the warm-up plate out of the wafer electroplating device, the cleaning operation of the warm-up plate is simplified, the occupation of other cleaning machines or measuring machines is reduced, and the cleaning efficiency of the warm-up plate is improved, thereby improving the electroplating efficiency and production capacity of the wafer electroplating device. Any two of the storage chamber 12, the electroplating chamber 10 and the cleaning chamber 11 in this specific embodiment are relatively independently arranged, so as not to affect the normal electroplating process of the product wafer, and there is no need to improve the electroplating process of the product wafer, thereby ensuring the normal electroplating process of the product wafer. In this specific embodiment, the multiple times mentioned herein refers to more than two times. In one example, after the warm-up operation is performed five times, the warm-up plate 20 is sent to the cleaning chamber 11 for cleaning, so that the metal plating layer 40 covering the surface of the warm-up plate 20 is removed by the cleaning structure.

[0041] In some embodiments, the storage chamber 12 includes a plurality of sub-chambers 21 corresponding one-to-one to the plurality of the electroplating chambers 10 , and each of the sub-chambers 21 is used to store at least one of the warm-up sheets 20 .

[0042] For example, if Figure 2 As shown, the storage chamber 12 includes a plurality of sub-chambers 21 corresponding to the plurality of electroplating chambers 10, each of which has a support portion 22 therein, and the support portion 22 is used to support the warm-up plate 20 located in the sub-chamber 21. By providing a plurality of sub-chambers 21 corresponding to the plurality of electroplating chambers 10 in the storage chamber 12, and each of the sub-chambers 21 is used to store at least one warm-up plate 20, it is possible to warm up the plurality of electroplating chambers 10 at the same time, thereby improving the warm-up efficiency of the wafer electroplating device, and thus helping to further improve the production capacity of the wafer electroplating device. In one example, the plurality of sub-chambers 21 in the storage chamber 12 are arranged in sequence in the vertical direction to improve the space utilization inside the wafer electroplating device.

[0043] In order to improve the utilization rate of the internal space of the wafer electroplating device without changing the path of the product wafer during electroplating, in some embodiments, the wafer electroplating device further includes:

[0044] The annealing chamber 15 is used to perform annealing treatment on the warm-up plate 20 forming the metal electroplating layer 40 , and the storage chamber 12 is located above the annealing chamber 15 .

[0045] Attached Figure 3 Schematic diagram of the structure of the warm-up plate in a specific embodiment of the utility model. Figure 3 As shown, the warm-up plate 20 includes a substrate 30 and a diffusion barrier layer 32 located on the substrate 30 . The diffusion barrier layer 32 is a conductor, and the material of the diffusion barrier layer 32 is different from the material of the metal electroplating layer 40 .

[0046] In some embodiments, the material of the diffusion barrier layer 32 includes ruthenium.

[0047] In one example, the heating plate 20 further includes an isolation layer 31 located between the substrate 30 and the diffusion barrier layer 32. The isolation layer 31 may be made of TEOS (Tetraethyl orthosilicate). The diffusion barrier layer 32 is formed on the substrate 30 by using a conductive material (such as ruthenium). On the one hand, since the process of electroplating metal (such as copper) on transition metal ruthenium is compatible with the process of electroplating copper on a copper seed layer, the diffusion barrier layer 32 can be used as a plating seed layer during the electroplating process, and there is no need to set another metal seed layer (such as a copper seed layer) on the warm-up plate 20, so that when the metal electroplating layer 40 is subsequently cleaned and removed in the cleaning chamber 11, the diffusion barrier layer 32 (i.e., the plating seed layer) will not be damaged, and the warm-up plate 20 can be recycled without depositing the plating seed layer again, which not only saves the cost of the electroplating process, but also effectively improves the electroplating efficiency. On the other hand, the diffusion barrier layer 32 also has the function of blocking the diffusion of metal particles (such as blocking the diffusion of copper particles), so that the diffusion barrier layer 32 and the plating seed layer can be combined into one, thereby improving the manufacturing efficiency of the warm-up plate and reducing the manufacturing cost of the warm-up plate. In addition, the material of the diffusion barrier layer 32 is set to ruthenium, not only because ruthenium has a low resistivity (resistivity is 7μΩ / cm), but also because the melting point of ruthenium is 2300°C, so it will not be mutually dissolved with the metal electroplating layer 40 during the warm-up operation. At the same time, since ruthenium is a precious metal, it is not easy to be oxidized, and even the ruthenium oxide generated by oxidation is a conductor, thereby ensuring the stability of the performance of the warm-up plate.

[0048] In some embodiments, the cleaning structure comprises:

[0049] A carrier 43 is located in the cleaning chamber 11, and the carrier 43 includes a carrier surface 44 for carrying the warm-up plate 20 formed with the metal electroplating layer 40, and the carrier 43 has a first driver capable of driving the warm-up plate 20 to rotate;

[0050] The first nozzle 41 is located in the cleaning chamber 11 , and the first nozzle 41 can at least spray cleaning liquid toward the center of the warm-up plate 20 on the supporting platform 43 .

[0051] Specifically, when the warm-up plate 20 is cleaned in the cleaning chamber 11, the warm-up plate 20 is placed on the carrying surface 44 of the carrying platform 43. Then, the first driver drives the carrying platform 43 to rotate, for example, Figure 5 The solid arrow in the figure rotates. The rotation of the support platform 43 drives the warm-up plate 20 located on the support platform 43 to rotate. The first nozzle 42 sprays cleaning liquid toward the center of the warm-up plate 20 on the support platform 43, and the cleaning liquid covers the entire surface of the metal electroplating layer 40 under the action of the centrifugal force generated by the rotation of the warm-up plate 20. After the cleaning liquid acts on the metal electroplating layer 40, the metal electroplating layer 40 is washed away to expose the diffusion barrier layer 32 on the warm-up plate 20. In this specific embodiment, the first nozzle 41 is set to at least be able to spray cleaning liquid toward the center of the warm-up plate 20 on the support platform 43, so that the cleaning liquid can fully contact the metal electroplating layer 40 on the warm-up plate 20, thereby achieving complete removal of the metal electroplating layer 40 on the warm-up plate 20, and further ensuring the normal operation of the subsequent warm-up plate 20.

[0052] In some embodiments, the cleaning structure further comprises:

[0053] A connecting arm 45, one end of which is connected to the edge of the supporting platform 43 and the other end of which is connected to the first nozzle 41, and the length of the projection of the connecting arm 45 on the supporting surface 44 is greater than the radius of the warm-up plate 20;

[0054] The second driver is connected to the connecting arm 45 , and is used to drive the connecting arm 45 to swing back and forth in a plane parallel to the bearing surface 44 .

[0055] For example, if Figure 4 and Figure 5 As shown, one end of the connecting arm 45 is connected to the second driver, and the other end is connected to the first nozzle 41. The second driver drives the connecting arm 45 to swing back and forth in a plane parallel to the bearing surface 44 (for example, along Figure 4The connecting arm 45 reciprocates along the path from the center of the warm-up plate 20 to the edge of the warm-up plate 20 and then to the center of the warm-up plate 20, thereby further increasing the efficiency and uniformity of the cleaning liquid covering the metal electroplating layer 40, and further improving the cleaning effect and cleaning efficiency of the warm-up plate 20.

[0056] In some embodiments, the cleaning structure further comprises:

[0057] The second nozzle 42 is located on the support platform 43 , and the first nozzle 41 and the second nozzle 42 are distributed at opposite ends of the support platform 43 . The second nozzle 42 can spray cleaning liquid to the edge of the warm-up plate 20 on the support platform 43 .

[0058] Specifically, the second nozzle 42 is used to perform edge cleaning on the product wafer and the warm-up plate 20 to remove impurities on the edges of the product wafer and the warm-up plate 20. The first nozzle 41 and the second nozzle 42 are distributed at opposite ends of the carrier 43, thereby providing sufficient space for the reciprocating swing of the first nozzle 41 to ensure that the first nozzle 41 swings smoothly. In addition, by setting the first nozzle 41 and the second nozzle 42 at the same time, the efficiency of the cleaning liquid covering the warm-up plate 20 can also be improved, so as to further improve the cleaning efficiency and cleaning effect of the warm-up plate 20.

[0059] In some embodiments, the wafer electroplating apparatus further comprises:

[0060] The first robot arm 18, the electroplating chamber 10, the cleaning chamber 11 and the storage chamber 12 are distributed together around the periphery of the first robot arm 18, and the first robot arm 18 is used to transfer the warm-up plate 20 between the electroplating chamber 10, the cleaning chamber 11 and the storage chamber 12.

[0061] For example, when the warm-up plate 20 is used for warm-up operation, the first robot arm 18 can take the warm-up plate 20 out of the storage chamber 12, place it on the alignment table 17 for alignment, and then transfer the aligned warm-up plate 20 to the electroplating chamber 10 for electroplating. When the warm-up plate 20 is cleaned, the first robot arm 18 can also transfer the warm-up plate 20 from the storage chamber 12 to the cleaning chamber 11. When the product wafer is electroplated, the first robot arm is also used to transfer the product wafer between the electroplating chamber 10 and the cleaning chamber 11.

[0062] In one example, the wafer electroplating device further includes a plating liquid tank 19 for storing a plating liquid and a gas tank 16 for transmitting a protective gas into the wafer electroplating device. The protective gas may be, but is not limited to, nitrogen. After the cleaning liquid is used to remove the metal plating layer 40 on the warm-up plate 20 in the cleaning chamber 11, the gas in the gas tank 16 may be used to purge the warm-up plate 20 to dry the warm-up plate 20. In one example, the gas tank 16 and the storage chamber 12 may both be located above the annealing chamber 15, and the gas tank 16 and the storage chamber 12 may be relatively independent (i.e., the gas tank 16 is located outside the storage chamber 12).

[0063] In some embodiments, the wafer electroplating apparatus further comprises:

[0064] A memory, used to store and record the number of times the warm-up plate 20 in the storage chamber 12 performs a warm-up operation;

[0065] The controller is connected to the memory and is used to determine whether the number of times the warm-up operation of the warm-up plate 20 has reached a threshold. If so, the warm-up plate 20 is transferred to the cleaning chamber 11 and the metal plating layer 40 on the surface of the warm-up plate 20 is removed.

[0066] Specifically, the number of times the warm-up operation of the warm-up plate 20 in the storage chamber 12 is performed is stored and recorded in the memory, so that the warm-up plate 20 can be automatically cleaned according to the number of times the warm-up operation of the warm-up plate 20 is performed, thereby reducing manual operations and further improving the automation level of the wafer electroplating device. The threshold value may be, but is not limited to, 5 times.

[0067] The wafer electroplating device provided in this specific embodiment is provided with a storage chamber, an electroplating chamber and a cleaning chamber which are independent of each other inside the wafer electroplating device, and the storage chamber is used to store the warm-up plate used for the warm-up operation, and the electroplating process is performed in the electroplating chamber by the warm-up plate to eliminate the influence of the first-piece effect and the like, thereby effectively improving the electroplating effect of the wafer electroplating device on the product wafer. Moreover, the cleaning structure in the cleaning chamber inside the wafer device can be used to clean the warm-up plate, so that there is no need to frequently take the warm-up plate out of the wafer electroplating device, which not only simplifies the cleaning operation of the warm-up plate, reduces the occupation of other cleaning machines or measuring machines, but also improves the cleaning efficiency of the warm-up plate, thereby improving the electroplating efficiency and production capacity of the wafer electroplating device. In addition, since there is no need to frequently take the warm-up plate out of the wafer electroplating device, the probability of contamination of the warm-up plate and the electroplating chamber is reduced, which helps to further improve the electroplating effect.

[0068] The above is only a preferred embodiment of the present invention. It should be pointed out that ordinary technicians in this technical field can make several improvements and modifications without departing from the principle of the present invention. These improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. A wafer electroplating device, characterized in that: include: A storage chamber for storing warm-up sheets; An electroplating chamber, located outside the storage chamber, wherein an electroplating structure is provided in the electroplating chamber, and wherein the electroplating structure is used to form a metal electroplating layer on the surface of the warm-up plate; A cleaning chamber is located outside the electroplating chamber. A cleaning structure is provided in the cleaning chamber. The cleaning structure is used to remove the metal electroplating layer on the surface of the warm-up plate.

2. The wafer electroplating device according to claim 1, characterized in that: The storage chamber includes a plurality of sub-chambers corresponding to the plurality of electroplating chambers one by one, and each of the sub-chambers is used to store at least one warm-up plate.

3. The wafer electroplating device according to claim 1, characterized in that: Also includes: The annealing chamber is used to anneal the warm-up plate that forms the metal electroplating layer, and the storage chamber is located above the annealing chamber.

4. The wafer electroplating device according to claim 1, characterized in that: The warm-up plate includes a substrate and a diffusion barrier layer located on the substrate. The diffusion barrier layer is a conductor, and the material of the diffusion barrier layer is different from the material of the metal electroplating layer.

5. The wafer electroplating device according to claim 4, characterized in that: The material of the diffusion barrier layer includes ruthenium.

6. The wafer electroplating device according to claim 1, characterized in that: The cleaning structure comprises: a carrier platform located in the cleaning chamber, the carrier platform comprising a carrier surface for carrying the warm-up plate formed with the metal electroplating layer, and a first driver capable of driving the warm-up plate to rotate; A first nozzle is located in the cleaning chamber, and the first nozzle can at least spray cleaning liquid toward the center of the warm-up plate on the supporting platform.

7. The wafer electroplating device according to claim 6, characterized in that: The cleaning structure further includes: a connecting arm, one end of which is connected to the edge of the supporting platform and the other end of which is connected to the first nozzle, and the length of the projection of the connecting arm on the supporting surface is greater than the radius of the warm-up plate; A second driver is connected to the connecting arm, and the second driver is used to drive the connecting arm to swing back and forth in a plane parallel to the bearing surface.

8. The wafer electroplating device according to claim 6, characterized in that: The cleaning structure further includes: a second nozzle located on the carrier platform, and the first nozzle and the second nozzle are distributed at opposite ends of the carrier platform, and the second nozzle can spray cleaning liquid to the edge of the warm-up plate on the carrier platform.

9. The wafer electroplating device according to claim 1, characterized in that: Also includes: A first robotic arm, the electroplating chamber, the cleaning chamber and the storage chamber are distributed together around the periphery of the first robotic arm, and the first robotic arm is used to transfer the warm-up plate between the electroplating chamber, the cleaning chamber and the storage chamber.

10. The wafer electroplating device according to claim 1, characterized in that: Also includes: A memory, used for storing and recording the number of times the warm-up plate in the storage chamber performs a warm-up operation; The controller is connected to the memory and is used to determine whether the number of times the warm-up operation of the warm-up plate has reached a threshold. If so, the warm-up plate is transferred to the cleaning chamber and the metal plating layer on the surface of the warm-up plate is removed.

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