Photovoltaic cell capable of protecting perovskite absorption layer
By setting up a multi-layer transparent conductive thin film layer group in the photovoltaic cell and adjusting the equipment power during the magnetron sputtering process, the problem of damage to the perovskite absorbing layer during the magnetron sputtering process is solved, and the protection of the perovskite absorbing layer and the improvement of the performance of the photovoltaic cell is achieved.
Patent Information
- Application Number
- CN202421465408.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-25
- Publication Date
- 2025-04-04
- Estimated Expiration
- 2034-06-25
AI Technical Summary
Plasma bombardment during magnetron sputtering can easily damage the perovskite absorption layer, resulting in a degradation of the performance of photovoltaic cells.
By providing a first front transparent conductive film layer, a second front transparent conductive film layer and a third front transparent conductive film layer, and increasing the power stepwise of the magnetron sputtering device, a transparent conductive film layer group with increasing thickness is formed to protect the perovskite absorption layer.
Effectively prevent damage to the perovskite absorption layer and improve the performance and production efficiency of photovoltaic cells.
Smart Images
Figure CN222721933U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of photovoltaic cell structures, in particular to a photovoltaic cell capable of protecting a perovskite absorption layer. Background Art
[0002] At present, the conversion efficiency record of high-efficiency monocrystalline silicon photovoltaic cells has reached 27.3%, close to its SQ theoretical limit of 29.4%, but it is becoming increasingly difficult to further improve the conversion efficiency. Selecting a top cell with a wide bandgap semiconductor to pair with a crystalline silicon photovoltaic cell to form a stacked device is an ideal strategy to break through the SQ theoretical efficiency limit of monocrystalline silicon photovoltaic cells. The perovskite-silicon heterojunction stacked photovoltaic cell obtained by combining the stacked device with the perovskite cell has the advantages of both high efficiency and low cost. In just a few years, the highest certified conversion efficiency is 34.6%. Therefore, the perovskite-silicon heterojunction stacked photovoltaic cell is one of the most competitive photovoltaic cells in the future photovoltaic market.
[0003] The prior art perovskite-silicon heterojunction stacked photovoltaic cells require a high-quality TCO layer (transparent conductive film layer) under the front electrode to transmit sunlight and collect current together with the metal grid line of the front electrode. The TCO layer not only needs the passage of sunlight, but also needs to collect current within the effective area. At the same time, the TCO layer can also be used as an anti-reflection layer to reduce the reflection of incident light, and can also be used as a lateral current transmission layer, which requires the TCO layer to have high optical transmittance and excellent electrical properties. The most common TCO layer in photovoltaic cells is ITO film. In the preparation of photovoltaic cells, magnetron sputtering is often used to deposit ITO film. The problem of this method when used is that during the magnetron sputtering process, the plasma bombardment of the magnetron sputtering equipment is easy to cause a certain degree of damage to the N-type silicon wafer, especially for the perovskite absorption layer in the photovoltaic cell. Although the front of the perovskite absorption layer is protected by the electron transmission layer, the high-energy plasma bombardment causes serious damage to the perovskite absorption layer, which leads to a significant decrease in the performance of the photovoltaic cell. Utility Model Content
[0004] In order to solve the above technical problems, the utility model provides a photovoltaic cell that can protect the perovskite absorption layer. The technical solution of the utility model is as follows:
[0005] A photovoltaic cell capable of protecting a perovskite absorption layer comprises a back electrode, a first photovoltaic cell substrate layer, an N-type silicon wafer, a second photovoltaic cell substrate layer, an intermediate composite layer, a hole transport layer, a perovskite absorption layer, an electron transport layer, a front transparent conductive film layer group and a front electrode; the front side of the N-type silicon wafer sequentially forms the second photovoltaic cell substrate layer, the intermediate composite layer, the hole transport layer, the perovskite absorption layer, the electron transport layer, the front transparent conductive film layer group and the front electrode, and the back side of the N-type silicon wafer sequentially forms the first photovoltaic cell substrate layer and the back side electrode; the front transparent conductive film layer group comprises a first front transparent conductive film layer, a second front transparent conductive film layer and a third front transparent conductive film layer, the front side of the electron transport layer sequentially forms the first front transparent conductive film layer, the second front transparent conductive film layer and the third front transparent conductive film layer, and the front side of the third front transparent conductive film layer forms the front electrode; the thickness of the first front transparent conductive film layer is less than the thickness of the second front transparent conductive film layer, and the thickness of the second front transparent conductive film layer is less than the thickness of the third front transparent conductive film layer.
[0006] Optionally, the sum of the thicknesses of the first front transparent conductive film layer, the second front transparent conductive film layer and the third front transparent conductive film layer is 100 nm.
[0007] Optionally, the thickness of the first front transparent conductive film layer is 10 nm, the thickness of the second front transparent conductive film layer is 40 nm, and the thickness of the third front transparent conductive film layer is 50 nm.
[0008] Optionally, the first photovoltaic cell substrate layer includes a back transparent conductive film layer, a P-type amorphous silicon layer and a first intrinsic amorphous silicon layer; the second photovoltaic cell substrate layer includes a second intrinsic amorphous silicon layer and an N-type amorphous silicon layer; the second intrinsic amorphous silicon layer and the N-type amorphous silicon layer are sequentially formed on the front side of the N-type silicon wafer, and the first intrinsic amorphous silicon layer, the P-type amorphous silicon layer and the back transparent conductive film layer are sequentially formed on the back side of the N-type silicon wafer.
[0009] Optionally, the first photovoltaic cell substrate layer includes a back anti-reflection film, an aluminum oxide passivation layer and a P-type emitter; the second photovoltaic cell substrate layer includes a tunneling oxide layer and an N-type polysilicon layer; the tunneling oxide layer and the N-type polysilicon layer are sequentially formed on the front side of the N-type silicon wafer, and the P-type emitter, the aluminum oxide passivation layer and the back anti-reflection film are sequentially formed on the back side of the N-type silicon wafer.
[0010] Optionally, the materials of the first front transparent conductive film layer, the second front transparent conductive film layer and the third front transparent conductive film layer are all a combination of indium oxide and tin oxide.
[0011] All the optional technical solutions mentioned above can be combined arbitrarily, and the present utility model does not provide detailed descriptions of the structures after the combinations one by one.
[0012] By means of the above scheme, the beneficial effects of the utility model are as follows:
[0013] By providing a first front transparent conductive film layer, a second front transparent conductive film layer and a third front transparent conductive film layer, and providing the first front transparent conductive film layer, the second front transparent conductive film layer and the third front transparent conductive film layer in sequence on the front side of the electron transport layer, firstly controlling the power of the magnetron sputtering device to be relatively small, so that the force of plasma bombardment during the magnetron sputtering process has a relatively small effect on the front side of the electron transport layer and the perovskite absorption layer, thereby forming a first front transparent conductive film layer with a relatively thin thickness, so that when the first front transparent conductive film layer is formed, the perovskite absorption layer will not be damaged, and the perovskite absorption layer can also be protected;
[0014] Then, when forming the second front transparent conductive film layer, based on the protection of the first front transparent conductive film layer, the power of the magnetron sputtering device can be increased, and the thickness of the second front transparent conductive film layer is made greater than the thickness of the first front transparent conductive film layer, which can reduce the influence of the process of forming the first front transparent conductive film layer and the second front transparent conductive film layer on the production efficiency of the photovoltaic cell; finally, when forming the third front transparent conductive film layer, the power of the magnetron sputtering device can be controlled to be further increased, so that the thickness of the third front transparent conductive film layer is greater than the thickness of the second front transparent conductive film layer, which is more conducive to improving the working efficiency of the magnetron sputtering process, and because the second front transparent conductive film layer and the first front transparent conductive film layer protect the perovskite absorption layer, when forming the third front transparent conductive film layer, even after a strong plasma bombardment, the perovskite absorption layer will not be damaged, further avoiding the influence of the damage of the perovskite absorption layer on the performance of the photovoltaic cell, and improving the working efficiency of the magnetron sputtering process;
[0015] In summary, the utility model controls the power of the magnetron sputtering device to increase in a step-by-step manner when forming the first front transparent conductive film layer, the second front transparent conductive film layer and the third front transparent conductive film layer, so that the thickness of the first front transparent conductive film layer, the second front transparent conductive film layer and the third front transparent conductive film layer increases gradually, which not only realizes the protection of the perovskite absorption layer, but also reduces the impact on the production efficiency of the photovoltaic cell.
[0016] The above description is only an overview of the technical solution of the utility model. In order to more clearly understand the technical means of the utility model and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the utility model in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 A schematic diagram of the structure of the first photovoltaic cell provided by the utility model;
[0018] Figure 2 A schematic diagram of the structure of a second photovoltaic cell provided by the utility model;
[0019] Figure 3 Schematic diagram of the structure of the magnetron sputtering equipment.
[0020] Description of Figure Numbers:
[0021] 1. Back electrode; 2-1. Back transparent conductive film layer; 2-2. Back anti-reflection film; 3-1. P-type amorphous silicon layer; 3-2. Aluminum oxide passivation layer; 4-1. First intrinsic amorphous silicon layer; 4-2. P-type emitter; 5. N-type silicon wafer; 6-1. Second intrinsic amorphous silicon layer; 6-2. Tunneling oxide layer; 7-1. N-type amorphous silicon layer; 7-2. N-type polysilicon layer; 8. Intermediate composite layer; 9. Hole transport layer; 10. Perovskite absorption layer; 11. Electron transport layer; 12. First front transparent conductive film layer; 13. Second front transparent conductive film layer; 14. Third front transparent conductive film layer; 15. Front electrode; 16. First cavity; 17. Second cavity; 18. First target; 19. Second target; 20. Third target; 21. Carrier. DETAILED DESCRIPTION
[0022] The following is a further detailed description of the specific implementation of the present invention in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.
[0023] like Figure 1 and Figure 2 As shown, the utility model provides a photovoltaic cell capable of protecting a perovskite absorption layer, comprising a back electrode 1, a first photovoltaic cell substrate layer, an N-type silicon wafer 5, a second photovoltaic cell substrate layer, an intermediate composite layer 8, a hole transport layer 9, a perovskite absorption layer 10, an electron transport layer 11, a front transparent conductive film layer group and a front electrode 15; the front side of the N-type silicon wafer 5 sequentially forms the second photovoltaic cell substrate layer, the intermediate composite layer 8, the hole transport layer 9, the perovskite absorption layer 10, the electron transport layer 11, the front transparent conductive film layer group and the front electrode 15, and the back side of the N-type silicon wafer 5 sequentially forms the first photovoltaic cell substrate layer and the back side. The front transparent conductive film layer group comprises a first front transparent conductive film layer 12, a second front transparent conductive film layer 13 and a third front transparent conductive film layer 14; the first front transparent conductive film layer 12, the second front transparent conductive film layer 13 and the third front transparent conductive film layer 14 are sequentially formed on the front side of the electron transport layer 11; the front side of the third front transparent conductive film layer 14 forms a front electrode 15; the thickness of the first front transparent conductive film layer 12 is less than the thickness of the second front transparent conductive film layer 13, and the thickness of the second front transparent conductive film layer 13 is less than the thickness of the third front transparent conductive film layer 14.
[0024] Specifically, the first front transparent conductive film layer 12 , the second front transparent conductive film layer 13 , and the third front transparent conductive film layer 14 in the present invention are all ITO film layers.
[0025] By arranging a first front transparent conductive film layer 12, a second front transparent conductive film layer 13 and a third front transparent conductive film layer 14 to be sequentially formed on the front surface of the electron transport layer 11, firstly, the power of the magnetron sputtering device is controlled to be relatively small, so that the force of plasma bombardment during the magnetron sputtering process has a relatively small effect on the front surface of the electron transport layer 11 and the perovskite absorption layer 10, thereby forming a first front transparent conductive film layer 12 with a relatively thin thickness. Therefore, when the first front transparent conductive film layer 12 is formed, the perovskite absorption layer 10 will not be damaged, and the perovskite absorption layer 10 can also be protected;
[0026] Afterwards, when forming the second front transparent conductive film layer 13, based on the protection of the first front transparent conductive film layer 12, the power of the magnetron sputtering device can be controlled to increase, and the thickness of the second front transparent conductive film layer 13 can be made greater than the thickness of the first front transparent conductive film layer 12, so that the influence of the process of forming the first front transparent conductive film layer 12 and the second front transparent conductive film layer 13 on the production efficiency of the photovoltaic cell can be reduced; finally, when forming the third front transparent conductive film layer 14, the power of the magnetron sputtering device can be controlled to increase further, so that the thickness of the third front transparent conductive film layer 14 is greater than the thickness of the second front transparent conductive film layer 13, which is more conducive to improving the working efficiency of the magnetron sputtering process, and because the second front transparent conductive film layer 13 and the first front transparent conductive film layer 12 protect the perovskite absorption layer 10, when forming the third front transparent conductive film layer 14, even after a strong plasma bombardment, the perovskite absorption layer 10 will not be damaged, further avoiding the influence of the damage of the perovskite absorption layer 10 on the performance of the photovoltaic cell, which is conducive to improving the production efficiency of the photovoltaic cell.
[0027] Optionally, the sum of the thicknesses of the first front transparent conductive film layer 12 , the second front transparent conductive film layer 13 , and the third front transparent conductive film layer 14 is 100 nm.
[0028] The sum of the thickness of the first front transparent conductive film layer 12, the second front transparent conductive film layer 13 and the third front transparent conductive film layer 14 of the present invention is the same as the thickness of the front transparent conductive film layer in the prior art. Therefore, under the same thickness as the prior art, the front transparent conductive film layer group in the present invention can protect the perovskite absorption layer 10, thereby improving the conversion efficiency of the photovoltaic cell.
[0029] Optionally, the thickness of the first front transparent conductive film layer 12 is 10 nm, the thickness of the second front transparent conductive film layer 13 is 40 nm, and the thickness of the third front transparent conductive film layer 14 is 50 nm.
[0030] Since the sputtering deposition power of the magnetron sputtering device is relatively small during the magnetron sputtering of the first front transparent conductive film layer 12, the force of the plasma bombarding the front surface of the perovskite absorption layer 10 is relatively small, which will not cause damage to the perovskite absorption layer 10, and can form a protective layer for the perovskite absorption layer 10 when the second front transparent conductive film layer 13 and the third front transparent conductive film layer 14 are subsequently formed.
[0031] In an implementation mode, Figure 1 As shown, the first photovoltaic cell substrate layer includes a back transparent conductive film layer 2-1, a P-type amorphous silicon layer 3-1 and a first intrinsic amorphous silicon layer 4-1; the second photovoltaic cell substrate layer includes a second intrinsic amorphous silicon layer 6-1 and an N-type amorphous silicon layer 7-1; the second intrinsic amorphous silicon layer 6-1 and the N-type amorphous silicon layer 7-1 are formed in sequence on the front side of the N-type silicon wafer 5, and the first intrinsic amorphous silicon layer 4-1, the P-type amorphous silicon layer 3-1 and the back transparent conductive film layer 2-1 are formed in sequence on the back side of the N-type silicon wafer 5.
[0032] In another embodiment, Figure 2 As shown, the first photovoltaic cell substrate layer includes a back anti-reflection film 2-2, an aluminum oxide passivation layer 3-2 and a P-type emitter 4-2; the second photovoltaic cell substrate layer includes a tunneling oxide layer 6-2 and an N-type polysilicon layer 7-2; the tunneling oxide layer 6-2 and the N-type polysilicon layer 7-2 are formed in sequence on the front side of the N-type silicon wafer 5, and the P-type emitter 4-2, the aluminum oxide passivation layer 3-2 and the back anti-reflection film 2-2 are formed in sequence on the back side of the N-type silicon wafer 5.
[0033] That is to say, the front transparent conductive film layer group provided by the present invention can be applicable to both the battery structure of heterojunction batteries and the battery structure of TOPCon batteries.
[0034] Optionally, the materials of the first front transparent conductive film layer 12 , the second front transparent conductive film layer 13 and the third front transparent conductive film layer 14 are all a combination of indium oxide and tin oxide.
[0035] Since the first front transparent conductive film layer 12, the second front transparent conductive film layer 13 and the third front transparent conductive film layer 14 in the present invention are all ITO film layers, they can all be prepared from a composition of indium oxide and tin oxide, wherein the concentration of tin oxide in the composition ranges from 0 to 10%.
[0036] like Figure 3As shown, the magnetron sputtering equipment used in the preparation of the utility model includes two process chambers, wherein the first target material 18 in the first chamber 16 is used for magnetron sputtering the first front transparent conductive film layer 12, the second target material 19 in the first chamber 16 is used for magnetron sputtering the second front transparent conductive film layer 13, and the third target material 20 in the second chamber 17 is used for magnetron sputtering the third front transparent conductive film layer 14; during the magnetron sputtering process, high-purity argon and oxygen are introduced as process gases.
[0037] The specific process of magnetron sputtering the first front transparent conductive film layer 12, the second front transparent conductive film layer 13 and the third front transparent conductive film layer 14 is as follows: the N-type silicon wafer 5 forming the electron transport layer 11 is placed on the carrier 21, and when the carrier 21 passes through the first target 18 of the first cavity 16, the speed of the carrier 21 is 2 mm / s, and the power of the magnetron sputtering device is controlled to be 0.25 kW. At this time, a 10 nm first front transparent conductive film layer 12 is formed on the front surface of the electron transport layer 11 by magnetron sputtering;
[0038] The carrier 21 continues to transport the second target material 19 through the first cavity 16. The speed of the carrier 21 is 2 mm / s. The power of the magnetron sputtering device is controlled to be 1 kW. At this time, a 40 nm second front transparent conductive film layer 13 is formed on the front surface of the first front transparent conductive film layer 12 by magnetron sputtering.
[0039] The carrier 21 continues to transport and pass through the third target material 20 of the second cavity 17. The speed of the carrier 21 is 10 mm / s. The power of the magnetron sputtering equipment is controlled to be 5 kW. At this time, a 50 nm third front transparent conductive film layer 14 is formed on the front side of the second front transparent conductive film layer 13 by magnetron sputtering.
[0040] In order to ensure the stability of the magnetron sputtering process in the same chamber, the speed of the carrier 21 passing through the first target 18 and the second target 19 is set to the same speed; of course, in order to maintain high-efficiency production, the speed of the carrier 21 passing through the second target 19 can also be greater than the speed of passing through the first target 18, and the speed of the carrier 21 passing through the third target 20 is greater than the speed of passing through the second target 19.
[0041] The utility model forms a first front transparent conductive film layer 12, a second front transparent conductive film layer 13 and a third front transparent conductive film layer 14 layer by layer on the front surface of the electron transport layer 11 by means of magnetron sputtering. In order to increase the thickness of the first front transparent conductive film layer 12, the second front transparent conductive film layer 13 and the third front transparent conductive film layer 14 in a step-by-step manner, it is necessary to control the power of the magnetron sputtering device to increase in a step-by-step manner, so as to effectively reduce the damage of the perovskite absorption layer 10 caused by the strong plasma bombardment during the magnetron sputtering process.
[0042] In order to verify the beneficial effects that can be achieved by the photovoltaic cell provided by the utility model, a comparative example and an embodiment are set up to test the battery performance, and the test results are compared. Taking the perovskite-silicon heterojunction laminated photovoltaic cell as an example, the comparative example is the perovskite-silicon heterojunction laminated photovoltaic cell of the prior art, and the embodiment is the perovskite-silicon heterojunction laminated photovoltaic cell provided by the utility model.
[0043] The specific process of preparing the perovskite-silicon heterojunction stacked photovoltaic cell of the utility model is as follows:
[0044] S1, performing a texturing process on the N-type silicon wafer 5, so that both the front and back sides of the N-type silicon wafer 5 form a pyramid-shaped texturing surface;
[0045] S2, performing a plasma chemical vapor deposition process on the N-type silicon wafer 5 after the texturing process, so that a second intrinsic amorphous silicon layer 6-1 and an N-type amorphous silicon layer 7-1 are sequentially formed on the front side of the N-type silicon wafer 5, and a first intrinsic amorphous silicon layer 4-1 and a P-type amorphous silicon layer 3-1 are sequentially formed on the back side of the N-type silicon wafer 5;
[0046] S3, performing a first magnetron sputtering treatment on the N-type silicon wafer 5 after the plasma chemical vapor deposition treatment, forming an intermediate composite layer 8 on the front surface of the N-type amorphous silicon layer 7-1 and forming a back transparent conductive thin film layer 2-1 on the back surface of the P-type amorphous silicon layer 3-1 by using a PVD device;
[0047] S4, performing a second magnetron sputtering treatment on the N-type silicon wafer 5 that has completed the first magnetron sputtering treatment, and forming a hole transport layer 9 on the front side of the intermediate composite layer 8 by using a PVD device;
[0048] S5, performing a slit coating process on the N-type silicon wafer 5 that has completed the second magnetron sputtering process, and forming a perovskite absorption layer 10 on the front side of the hole transport layer 9 through the slit coating device;
[0049] S6, performing evaporation treatment on the N-type silicon wafer 5 after the slit coating treatment, and forming an electron transport layer 11 on the front side of the perovskite absorption layer 10 by using a vacuum evaporation device;
[0050] S7, performing a third magnetron sputtering treatment on the N-type silicon wafer 5 that has completed the evaporation treatment, and using the magnetron sputtering equipment to sequentially form a first front transparent conductive film layer 12, a second front transparent conductive film layer 13 and a third front transparent conductive film layer 14 on the front surface of the electron transport layer 11;
[0051] S8, performing screen printing on the N-type silicon wafer 5 that has completed the third magnetron sputtering process, forming a front electrode 15 on the front surface of the third front transparent conductive film layer 14, and forming a back electrode 1 on the back surface of the back transparent conductive film layer 2-1 by means of a screen printing process device;
[0052] S9, sintering and curing the N-type silicon wafer 5 after the screen printing process, and finally forming a perovskite-silicon heterojunction laminated photovoltaic cell; wherein the temperature of the sintering and curing process is 200°C.
[0053] The perovskite-silicon heterojunction tandem photovoltaic cell obtained based on the above preparation method is taken as an example, and the cell performance test is carried out. The test results are compared with the cell performance of the perovskite-silicon heterojunction tandem photovoltaic cell in the prior art. The comparison results are shown in Table 1.
[0054] Table 1
[0055]
[0056] As can be seen from Table 1, the performance parameters of the perovskite-silicon heterojunction laminated photovoltaic cell provided by the utility model are improved, indicating that the defects of the perovskite-silicon heterojunction laminated photovoltaic cell provided by the utility model are significantly reduced. When conducting the above-mentioned battery performance test, the carrier mobility of the front transparent conductive film layer group of the perovskite-silicon heterojunction laminated photovoltaic cell provided by the utility model and the front transparent conductive film layer of the perovskite-silicon heterojunction laminated photovoltaic cell of the prior art were compared. The comparison results show that the carrier mobility of the front transparent conductive film layer group formed by the utility model is significantly improved, further illustrating that the front transparent conductive film layer group provided by the utility model and the method of forming the front transparent conductive film layer group not only protect the perovskite absorption layer 10, but also improve the photoelectric performance of the front transparent conductive film layer group. It proves the advantage of the utility model in forming the first front transparent conductive film layer 12, the second front transparent conductive film layer 13 and the third front transparent conductive film layer 14 layer by layer in a step-by-step manner.
[0057] In summary, the utility model can protect the perovskite absorption layer 10 during the magnetron sputtering process by dividing the front transparent conductive film layer component into a first front transparent conductive film layer 12, a second front transparent conductive film layer 13 and a third front transparent conductive film layer 14, thereby preventing damage to the perovskite absorption layer 10 and improving the performance of the photovoltaic cell.
[0058] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. It should be pointed out that a person skilled in the art can make several improvements and modifications without departing from the technical principle of the present invention, and these improvements and modifications should also be regarded as within the protection scope of the present invention.
Claims
1. A photovoltaic cell capable of protecting a perovskite absorption layer, characterized in that: include: A back electrode (1), a first photovoltaic cell substrate layer, an N-type silicon wafer (5), a second photovoltaic cell substrate layer, an intermediate composite layer (8), a hole transport layer (9), a perovskite absorption layer (10), an electron transport layer (11), a front transparent conductive film layer group and a front electrode (15); The front side of the N-type silicon wafer (5) sequentially forms a second photovoltaic cell matrix layer, an intermediate composite layer (8), a hole transport layer (9), a perovskite absorption layer (10), an electron transport layer (11), a front transparent conductive film layer group and a front electrode (15), and the back side of the N-type silicon wafer (5) sequentially forms a first photovoltaic cell matrix layer and a back electrode (1); The front transparent conductive film layer group comprises a first front transparent conductive film layer (12), a second front transparent conductive film layer (13) and a third front transparent conductive film layer (14); the first front transparent conductive film layer (12), the second front transparent conductive film layer (13) and the third front transparent conductive film layer (14) are sequentially formed on the front side of the electron transport layer (11); and the front electrode (15) is formed on the front side of the third front transparent conductive film layer (14); The thickness of the first front transparent conductive film layer (12) is smaller than the thickness of the second front transparent conductive film layer (13), and the thickness of the second front transparent conductive film layer (13) is smaller than the thickness of the third front transparent conductive film layer (14).
2. A photovoltaic cell capable of protecting a perovskite absorption layer according to claim 1, characterized in that: The sum of the thicknesses of the first front transparent conductive film layer (12), the second front transparent conductive film layer (13) and the third front transparent conductive film layer (14) is 100 nm.
3. A photovoltaic cell capable of protecting a perovskite absorption layer according to claim 1 or 2, characterized in that: The thickness of the first front transparent conductive film layer (12) is 10 nm, the thickness of the second front transparent conductive film layer (13) is 40 nm, and the thickness of the third front transparent conductive film layer (14) is 50 nm.
4. A photovoltaic cell capable of protecting a perovskite absorption layer according to claim 1, characterized in that: The first photovoltaic cell substrate layer comprises: a back transparent conductive film layer (2-1), a P-type amorphous silicon layer (3-1) and a first intrinsic amorphous silicon layer (4-1); The second photovoltaic cell substrate layer comprises a second intrinsic amorphous silicon layer (6-1) and an N-type amorphous silicon layer (7-1); A second intrinsic amorphous silicon layer (6-1) and an N-type amorphous silicon layer (7-1) are sequentially formed on the front side of the N-type silicon wafer (5), and a first intrinsic amorphous silicon layer (4-1), a P-type amorphous silicon layer (3-1) and a back transparent conductive film layer (2-1) are sequentially formed on the back side of the N-type silicon wafer (5).
5. A photovoltaic cell capable of protecting a perovskite absorption layer according to claim 1, characterized in that: The first photovoltaic cell substrate layer comprises: a back anti-reflection film (2-2), an aluminum oxide passivation layer (3-2) and a P-type emitter (4-2); The second photovoltaic cell substrate layer comprises a tunneling oxide layer (6-2) and an N-type polysilicon layer (7-2); A tunneling oxide layer (6-2) and an N-type polysilicon layer (7-2) are sequentially formed on the front side of the N-type silicon wafer (5), and a P-type emitter (4-2), an aluminum oxide passivation layer (3-2) and a back side anti-reflection film (2-2) are sequentially formed on the back side of the N-type silicon wafer (5).
6. A photovoltaic cell capable of protecting a perovskite absorption layer according to claim 1, characterized in that: The materials of the first front transparent conductive film layer (12), the second front transparent conductive film layer (13) and the third front transparent conductive film layer (14) are all a combination of indium oxide and tin oxide.