Power amplifier unit and radio frequency power supply system and plasma process supply system using same

Abstract

The utility model provides a power amplifier unit and a radio frequency power supply system and a plasma process supply system using the same, and the power amplifier unit is used for coupling radio frequency signals and comprises at least two radio frequency power amplifier stage components with output impedance; the at least two heat dissipation modules are in one-to-one correspondence with the power amplifier-stage assemblies; impedance components of the radio frequency power amplifier-stage assemblies are respectively arranged on the corresponding heat dissipation modules; the output ends of the radio frequency power amplifier stage assemblies are electrically connected with transmission line assemblies with line impedances, and the line impedances are equal to the output impedances of the corresponding radio frequency power amplifier stage assemblies; the coupling line assembly is electrically connected with all the transmission line assemblies, and the coupling line assembly has coupling line impedance; and the at least one measuring device is arranged at the position of the at least one transmission line assembly and / or the coupling line assembly and is used for measuring a power value describing the position of the at least one transmission line assembly and / or the coupling line assembly. According to the scheme provided by the invention, electromagnetic interference caused by cooperative use of a plurality of power amplifier stages can be effectively avoided.

Description

Technical Field

[0001] The present application relates to the field of radio frequency applications, and in particular to a power amplifier unit and a radio frequency power supply system and a plasma process supply system using the unit. Background Art

[0002] Plasma system is a common and widely used system in industrial production, for example, a system for providing power to a load or a plasma processing device.

[0003] Plasma systems usually require matching plasma equipment and plasma processes for use, through which materials, especially their surfaces, can be processed, such as coating, etching or activation. For example, such plasma process arrangements can be found in the production of architectural glass, photovoltaic modules, displays, semiconductor components (such as microcontrollers or semiconductor memory chips), etc. Since these are high-precision processes, the requirements for such plasma process arrangements and the plasma process supply systems that provide power for them are very high in terms of measurement and control accuracy, reliability, continuous operation, efficiency, etc. Such plasma process supply systems are usually designed for powers ≥2kW, preferably ≥4kW, and frequencies in the range of 2MHz to 200MHz, especially in the range of 10MHz to 50MHz. Such plasma process supply systems usually have at least one RF signal source, which provides the required power and controls it according to the process specifications. In addition, the plasma process supply system usually has one or more impedance matching circuits, which are intended to match the impedance at the output of the RF signal source with the impedance at the input of the plasma process. Due to the currently available transistors, the output power of the high-frequency signal source, especially the RF power amplifier stage with transistor amplifiers, is limited to between 100W and several kW. Therefore, in order to achieve higher output power, multiple high-frequency signal sources must be interconnected. The interconnection can be achieved in the RF power amplifier unit.

[0004] A power combiner for such a process is known, for example, from DE 20 2016 008 958 U1.

[0005] The disadvantage of such a power combiner is that it is only suitable for a limited power output. This is because the number of RF signal sources that can be placed around it is limited by the space. RF power amplifier units are designed to have the smallest possible losses at a high bandwidth. In particular, high-frequency signal sources for plasma process power supply systems require such RF power amplifier units. As the requirements for measurement and control accuracy and stability of plasma process supply systems continue to increase, the corresponding requirements on RF power amplifier units used for this purpose are also increasing. At high powers, RF power amplifier units usually require a lot of space. In addition, the problem of interference effects due to unwanted radiation is also increasing.

[0006] The present application is therefore based on the task of providing a radio frequency power amplifier unit which reliably combines a plurality of radio frequency power amplifier stages in a limited space and at high power and monitors the output power by means of a measuring device. Summary of the invention

[0007] The present application provides a power amplifier unit and a radio frequency power supply system and a plasma process supply system using the unit.

[0008] In a first aspect, the present application provides a power amplifier unit for coupling a radio frequency signal, comprising:

[0009] at least two radio frequency power amplifier stage components, each of the power amplifier stage components having an output impedance;

[0010] At least two heat dissipation modules, the heat dissipation modules correspond to the power amplifier stage components one by one, and the impedance components of the radio frequency power amplifier stage components are respectively arranged on the corresponding heat dissipation modules;

[0011] The output end of each RF power amplifier stage component is electrically connected to a transmission line component, and each transmission line component has a line impedance, and the line impedance is equal to the output impedance of the corresponding RF power amplifier stage component;

[0012] A coupled line component is electrically connected to all transmission line components, and the coupled line component has a coupled line impedance;

[0013] At least one measuring device is arranged at the location of at least one of the transmission line components and / or coupling line components, and is used to measure a power value describing the location.

[0014] In a second aspect, the present application provides a radio frequency power supply system, comprising the above-mentioned power amplifier unit and an impedance matching circuit located downstream of the power amplifier unit.

[0015] In a third aspect, the present application provides a plasma process supply system, comprising the above-mentioned power amplifier unit and an impedance matching circuit located downstream of the circuit, wherein the power amplifier unit is connected to the input end of the impedance matching circuit, and the output end of the impedance matching circuit is connected to a plasma process component.

[0016] Through the above technical solution, compared with the prior art, the present application has the following beneficial effects:

[0017] By using the power amplifier unit provided in this application and its application in the radio frequency power supply system and the plasma process supply system:

[0018] 1. It can ensure that the loss of the power amplifier unit is minimized at high bandwidth;

[0019] 2. Effectively improve the measurement and control accuracy of the plasma process supply system;

[0020] 3. Reduce the space required for the power amplifier unit at high power;

[0021] 4. Reduce interference caused by electromagnetic radiation inside the equipment.

[0022] Advantageously, the coupling line impedance and the line impedance satisfy a preset impedance relationship, and the preset impedance relationship is that the coupling line impedance is equal to the reciprocal of the sum of the reciprocals of all line impedances.

[0023] Advantageously, the coupled line impedance and the line impedance satisfy a preset impedance relationship, and the preset impedance relationship is line impedance=n*coupled line impedance, where n is the number of the transmission line components TL.

[0024] Advantageously, at least part of the RF power amplifier stage components are located outside the heat dissipation space. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 A schematic diagram of a first embodiment of a power amplifier unit of the present application;

[0026] Figure 2 A schematic diagram of a second embodiment of a power amplifier unit of the present application;

[0027] Figure 3 A schematic diagram of the principle of any embodiment of the power amplifier unit of the present application;

[0028] Figure 4 Another embodiment of the radio frequency power amplifier unit of the present application;

[0029] Figure 5 The plasma processing system of the present application has a radio frequency power amplifier stage unit. DETAILED DESCRIPTION

[0030] like Figure 1 , Figure 3 and Figure 4As shown, it is the first embodiment of the present application. In this embodiment, the present application discloses a power amplifier unit 10, which reliably interconnects the output power of two power amplifier stage components in a limited space, and uses a metering device to monitor the power of the power amplifier stage component and the output power of the power amplifier unit 10. In addition, by arranging the RF power amplifier stage arrangement on the heat sink part, a shielding effect can be achieved. Therefore, interference effects, such as unwanted radiation, can be avoided. This power amplifier unit 10 can be used to couple RF signals, and is suitable for RF devices with a power of ≥2kW, preferably ≥4kW, and a frequency range of 2MHz to 200MHz, especially 10MHz to 50MHz. The power amplifier unit includes a first heat dissipation module CS1, a second heat dissipation module CS2, a first RF power amplifier stage component AU1 and a second power amplifier stage component AU2, wherein the impedance component part of the first RF power amplifier stage component AU1 is arranged on the first heat dissipation module CS1, and the impedance component part of the second power amplifier stage component AU2 is arranged on the second heat dissipation module CS2, and the heat dissipation module CS2 is arranged on the cooling units CP1 and CP2 respectively. Several radiator parts of CS1 and CS2 are arranged on a common cooling cover, but are partially spaced apart from each other (not shown in the figure). For example, the first radiator part CS1 can be located on the first side of the cooling unit, and the second radiator part CS2 can be located on the back of the same cooling unit. Because the impedance components are components that generate more heat in the power amplifier assembly, arranging them on an independent heat dissipation module can effectively improve the heat dissipation efficiency and achieve better component cooling effect. Among them, the heat dissipation module is part of the cooling unit. The cooling unit can be designed as a cold plate, and at least part of the cooling unit can be composed of multiple parts of different materials. Examples of such cooling units are disclosed and described in detail in the following public documents: WO2019 / 072894A1, WO2013 / 068004A1, WO2014 / 207185A1.

[0031] The first RF power amplifier stage component AU1 has a first output impedance Z1, and the second power amplifier stage component AU2 has a second output impedance Z2. The output impedance is one of the basic parameters of the RF power amplifier stage component. The coordination and adjustment between the output impedances will directly affect the final use effect of the amplifier module.

[0032] like Figure 1As shown, the first RF power amplifier stage component AU1 is connected to the first transmission line component TL1, the first transmission line component TL1 has a first line impedance Z1', and the first output impedance Z1 and the first line impedance Z1' satisfy a preset impedance relationship: Z1' = Z1. The second RF power amplifier stage component AU2 is connected to the second transmission line component TL2, the second transmission line component TL2 has a second line impedance Z2', and the second output impedance Z2 and the second line impedance Z2' satisfy a preset impedance relationship: Z2' = Z2.

[0033] like Figure 1 As shown, the power amplifier unit 10 also includes a coupling line component TLC, which is electrically connected to the first RF power amplifier stage component AU1 through the first transmission line component TL1, and is electrically connected to the second RF power amplifier stage component AU2 through the second transmission line component TL2, so as to achieve the effect of transmitting the sum of the output powers of the two RF power amplifier stage components, wherein the first RF power amplifier stage component AU1 and the second RF power amplifier stage component AU2 are in a parallel relationship. The coupling line component TLC has a coupling line impedance ZC', and the coupling line impedance ZC' and the first line impedance Z1' and the second line impedance Z2' satisfy a preset impedance relationship: ZC' = 1 / (1 / Z1' + 1 / Z2'). Through this impedance preset relationship, the interference caused by reflection can be further reduced, and the measurement and control can be further improved.

[0034] The first line impedance Z1' and the second line impedance Z2' satisfy the following preset impedance relationship: Z2'=Z1'. Through this preset impedance design, the interference caused by reflection can be further reduced, and the measurement and control can be further improved.

[0035] Furthermore, the first line impedance Z1', the second line impedance Z2' and the coupled line impedance ZC' satisfy the following preset impedance relationship: Z2'=Z1'=2*ZC'. In this way, the interference caused by reflection can be further reduced, and the measurement and control can be further improved.

[0036] like Figure 2 As shown, another embodiment disclosed in the present application is different from the above-mentioned first embodiment in that a power amplifier unit 10 is disclosed, which includes not only a first RF power amplifier stage component AU1 and a second RF power amplifier stage component AU2, but also a third RF power amplifier stage component AUn and a third heat dissipation module CSn. The impedance components of the third RF power amplifier stage component AUn are arranged on the third heat dissipation module CS to achieve the purpose of heat dissipation.

[0037] like Figure 2As shown, the third RF power amplifier stage component AUn has a third output impedance Zn, and the third RF power amplifier stage component AUn is connected to the third transmission line component TLn, the third transmission line component TLn has a third line impedance Zn', and the third output impedance Zn and the first line impedance Zn' satisfy a preset impedance relationship: Zn'=Zn.

[0038] like Figure 2 As shown, in the second embodiment, the coupling line component TLC is also electrically connected to the third RF power amplifier stage component AUn through the third transmission line component TLn, so as to achieve the effect of transmitting the sum of the output powers of all RF power amplifier stage components. And the coupling line impedance ZC' and the first line impedance Z1', the second line impedance Z2' and the third line impedance Zn' satisfy the preset impedance relationship: ZC'=1 / (1 / Z1'+1 / Z2'+1 / Zn'), so that even at higher power, the interference caused by reflection can be further reduced, and the measurement and control system can be further improved.

[0039] The first line impedance Z1', the second line impedance Z2' and the third line impedance Zn' satisfy the following preset impedance relationship: Zn'=Z2'=Z1'. This preset impedance design can further reduce interference caused by reflection and further improve measurement and control.

[0040] Furthermore, the first line impedance Z1', the second line impedance Z2', the third line impedance Zn' and the coupled line impedance ZC' satisfy the following preset impedance relationship: Zn'=Z2'=Z1'=3*ZC'. In this way, the interference caused by reflection can be further reduced, and the measurement and control can be further improved.

[0041] The technical solution may also include more RF power amplifier stage components, and all the RF power amplifier stage components are connected in parallel to realize centralized power output. At this time, the preset impedance relationship between the coupled line impedance and the line impedance also satisfies the above relationship. For example, if there is a third line impedance Z3' and a fourth line impedance Z4', then ZC'=1 / (1 / Z1'+1 / Z2'+1 / Z3'+1 / Z4'), and Z4'=Z3'=Z2'=Z1'=4*ZC'. In this way, even at higher power, the interference caused by reflection can be further reduced, and the measurement and control system can be further improved.

[0042] like Figure 1-2 As shown, in any embodiment of the present application, the transmission line components TL1, TL2, and TLn may be configured as follows, including:

[0043] The signal conductors SL1, SL2, SLn are used to transmit the corresponding output signals of the RF power amplifier stage components AU1, AU2, AUn respectively; the reference conductors BL1, BL2, BLn are used to be electrically connected to a constant potential relative to the reference ground GND. In this way, the interference caused by radiation can be further reduced and the measurement and control can be further improved.

[0044] like Figure 1-3 As shown, in any embodiment of the present application, the coupled line component TLC has:

[0045] A coupled signal conductor SLC is designed to transmit the combined output signal of the plurality of RF power amplifier stage components AU1, AU2, AUn; and a coupled reference conductor BLC is electrically connected to a constant potential relative to the reference ground GND. In this way, interference caused by radiation can be further reduced and measurement and control can be further improved.

[0046] like Figure 3 As shown, in any embodiment of the present application, the transmission line and the coupling line can be set to a microstrip line MSL form. In this way, the interference caused by radiation can be further reduced, and the measurement and control can be further improved.

[0047] like Figure 3 and Figure 4 As shown, in any embodiment of the present application, the transmission line and the coupling line can be configured as a coaxial line CXL. In this way, the interference caused by radiation can be further reduced, and the measurement and control can be further improved.

[0048] like Figure 3 and Figure 4 As shown, in any embodiment of the present application, the RF power amplifier stage components AU1, AU2 are respectively arranged on the printed circuit boards PCB1, PCB2, PCB12, PCB34, and the transmission line components TL1, TL2 are respectively electrically connected to the electrical contacts of the corresponding printed circuit boards PCB1, PCB2. In this way, production can be facilitated and very reliable and production-accurate measurements can be performed.

[0049] like Figure 3 and Figure 4As shown, the circuit boards PCB1 and PCB12 are located on the first heat dissipation module CS1, and therefore are also located on the first cooling unit CP1 in this embodiment. The circuit boards PCB2 and PCB34 are located on the second heat dissipation module CS2, and therefore are also located on the second cooling unit CP2 in this form. In addition, the power amplifier unit 10 has a power combination component 1. The figure shows that the RF power amplifier stage component has four amplifier stages AS1-AS4, and the figure also shows four coupling elements designed as inductors L1-L4, a main output OUT and a compensation circuit B. The compensation circuit B includes four energy absorbers designed as resistors R1-R4 and a compensation line W1 with a length of n*λ / 2.

[0050] The first two amplifier stages AS1 and AS2 are arranged on the circuit board PCB12 and arranged on the first heat dissipation module CS1 together with the circuit board PCB1, and therefore are also arranged on the first cooling unit CP1 in this embodiment. The second two amplifier stages AS3-AS4 are arranged on the circuit board PCB34 and arranged on the second heat dissipation module CS2 together with the circuit board PCB2, and therefore are also arranged on the second cooling unit CP2 in this embodiment.

[0051] The circuit board PCB1 and the circuit board PCB12 may be combined into one common PCB.

[0052] The circuit board PCB2 and the circuit board PCB34 may be combined into one common PCB.

[0053] This simplifies manufacturing and reduces cable connections between PCBs, making the entire system more reliable.

[0054] The first two inductors L1 and L2 and the first two resistors R1 and R2 are arranged on the circuit board PCB1. The second two inductors L3 and L4 and the second two resistors R3 and R4 are arranged on the circuit board PCB2.

[0055] like Figure 4 As shown, in any embodiment of the present application, the printed circuit boards PCB1 and PCB2 are arranged on the heat dissipation modules CS1 and CS2, which can not only effectively cool and dissipate all components of the RF power amplifier stage components AU1 and AU2, but also further reduce the interference caused by radiation and further improve measurement and control.

[0056] like Figure 1-3 As shown, in any embodiment of the present application, the heat dissipation modules CS1, CS2, and CSn surround to form a heat dissipation space V1. In this way, all the RF power amplifier stage components are arranged in a surrounding manner, which can not only effectively reduce the volume of the power amplifier unit, but also avoid the RF power amplifier stage components being too close to each other, thereby further reducing the interference caused by radiation and further improving measurement and control.

[0057] like Figure 1-3 As shown, in any embodiment of the present application, the coupled line component TLC is disposed in the heat dissipation space V1, which can further reduce interference caused by radiation and further improve measurement and control.

[0058] like Figure 1-3 As shown, in any embodiment of the present application, the transmission line components TL1, TLn, TL2 are arranged in the heat dissipation space V1, which can further reduce interference caused by radiation and further improve measurement and control.

[0059] like Figure 1-3 As shown, in any embodiment of the present application, all RF power amplifier stage components are located outside the heat dissipation space V1. In this way, the interference caused by radiation can be further reduced, and the measurement and control can be further improved.

[0060] In any embodiment of the present application, all RF power amplifier stage components adopt the same design, which can improve the reliability of the RF power amplifier unit by allowing the use of common parts.

[0061] In any embodiment of the present application, the heat dissipation module is disposed on the cooling unit, and the cooling unit can be a cooling device of air cooling, water cooling or a combination thereof. By achieving better cooling of the RF power amplifier stage components, temperature-sensitive components can be operated for a long time, thereby improving the operating stability of the power amplifier.

[0062] like Figure 1-3 As shown, in any embodiment of the present application, a measuring device M1 is also included, and a measuring probe of the measuring device is arranged at the position of the transmission line component and the coupling line component, so as to achieve the effect of intuitively measuring the power parameters of each transmission line and coupling line.

[0063] The M1 measurement device may include at least one directional coupler or a current sensor and a voltage sensor. Using at least one directional coupler, the M1 measurement device may measure the impedance matching circuit 11 (such as the impedance matching circuit 11 connected to the RF power supply unit 10) along the RF power supply unit 10. Figure 5 The measuring device M1 can also measure the power of the radio frequency signal, which is reflected back to the impedance matching circuit 11 in the direction of the power amplifier unit 10. The power of the radio frequency signal can also be determined by a current sensor and a voltage sensor, which are emitted from the power amplifier unit 10 in the direction of the impedance matching circuit 11. The power of the radio frequency signal reflected by the impedance matching circuit 11 can also be detected by the current sensor and the voltage sensor.

[0064] For example, a typical measuring device M1 is shown in one of the following publications: WO 2019 / 185424 A1, WO 2013 / 143537 A1, US 2009 / 0140722 A1, US 2006 / 0232265 A1, DE 202011051371 U1.

[0065] like Figure 1 and Figure 3 As shown, in any embodiment of the present application, each RF power amplifier stage component has multiple amplifier stages AS1, AS2, AS3, AS4, and these amplifier stages and their outputs are connected to the input of the power combiner. The power combiner includes:

[0066] - multiple inputs and one output,

[0067] - several coupling elements, in particular inductors, each connecting the input to the output of a power combiner section,

[0068] - an energy absorber, in particular a resistor, connected to the input of the power combiner, in particular several energy absorbers, in particular resistors, connected to the input of a power combiner section, in particular a star.

[0069] In this way, interference caused by reflections can be further reduced even at higher powers and measurement and control systems can be further improved.

[0070] like Figure 3-5 As shown, in any embodiment of the present application, the power amplifier unit has a power combination component 1, which has:

[0071] - A power combiner 1a, 1b, each transmission line being electrically connected to an output of the power combiner.

[0072] - A compensation line W1, which is electrically connected to all power combiners.

[0073] In this way, interference caused by reflections can be further reduced even at higher powers and measurement and control systems can be further improved.

[0074] The compensation line may be a line with a fixed impedance and a length of n*λ / 2, where n∈N.

[0075] Such a balancing line is described, for example, in the patent application DE102023111812.9 filed on May 5, 2023, which is fully incorporated into the present application by reference:

[0076] This balanced line can be used to avoid cross-feeding of the RF power amplifier stage used as a high-frequency signal source and uneven distribution of reflected output power. If the amplitude, phase or internal resistance of the RF power amplifier stage connected to the power combiner is uneven, a push-pull signal that is harmful to the high-frequency signal source will be generated. In addition, or if the reflected power is unevenly distributed, the phase and / or amplitude of the various RF power amplifier stage components and the load impedance may vary. This may cause excessive stress on the most heavily loaded RF power amplifier stage components.

[0077] To avoid this, a balanced cable can be connected to the input of the power combiner.

[0078] The compensation line can also be designed as a compensation circuit with additional components (such as resistors).

[0079] In particular, the specified impedance of the compensation line may be equal to the impedance of the corresponding input terminal.

[0080] In particular, the specified impedance of the compensation line may be equal to an integer multiple of the impedance of the corresponding input terminal.

[0081] In particular, the fixed impedance of the compensation line may be equal to an integer divisor of the corresponding input impedance.

[0082] In particular, the specified impedance of the compensation line may be equal to 25Ω, 50Ω or 100Ω.

[0083] Generally speaking, λ refers to the wavelength of the high-frequency signal within the corresponding line, ie in this case, the frequency within the operating frequency range, in particular the center frequency of the operating frequency range.

[0084] n∈N means that n is a natural number, that is, n=1, 2, 3, 4,...

[0085] The "operating frequency range" refers to the operating frequency range of the power combiner and the RF power amplifier stages that can be connected to it, i.e. what they are designed for. This can be a very narrow operating frequency range, such as 13.54MHz-13.58MHz, or a slightly wider operating frequency range, such as 13.06MHz to 14.06MHz. In both cases the center frequency is 13.56MHz. The operating frequency range is usually specified by the power combiner manufacturer as a nominal frequency range. This will vary depending on the application area of ​​the power combiner. If the power combiner is part of an RF power amplifier unit, it is also designed for at least this operating frequency range.

[0086] like Figure 3 and Figure 4As shown, in the first embodiment of the present application, the power combination component 1 includes 4 inputs In1-In4, 1 main output OUT, 4 coupling elements designed as inductors L1-L4 and a compensation circuit B. Each RF power amplifier stage component includes 4 amplifier stages AS1-AS4, and the amplifier stages AS1-AS4 are connected to the In1-In4 inputs. The L1-L4 inductors connect the In1-In4 inputs to the main OUT output.

[0087] The first two inputs In1, In2 are connected to each other through the first two inductors L1, L2 in the first output O1 and the second two inputs In3, In4 are connected to each other through the second two inductors L3, L4 in the second output O2. The two outputs O1, O2 are then connected to the main output OUT.

[0088] Four inductors L1-L4 and four RF power amplifier stages AS1-AS4 are arranged on two cooling units CP1, CP2. On the first cooling unit CP1, the first two inductors are L1, L2 and the first two RF power amplifier stages AS1, AS2. The RF power amplifier stages AS1, AS2 and the elements of the first power combiner part 1a, that is, the coupling elements designed here as inductors L1, L2, and the energy absorber of the resistors R1, R2 formed here, together constitute the first RF power amplifier stage component AU1. The second cooling unit CP2 contains the last two inductors L3, L4 and the last two HF power amplifier stages AS3, AS4. The amplifier stages AS3, AS4 and the elements of the second power combiner 1b, that is, the coupling elements designed here as inductors L3, L4 and the energy absorber of the resistors R3, R4 formed here, together constitute the second RF power amplifier stage component AU2.

[0089] like Figure 3 and Figure 4 As shown, in the first embodiment of the present application, the compensation circuit B has four energy absorbers, which are designed as resistors R1-R4, and a compensation line W1 with a length of n*λ / 2. Through the compensation circuit B, the four inputs In1-In4 are interconnected. To this end, the first two inputs In1 and In2 are interconnected through the first two resistors R1 and R2 arranged on the first cooling unit CP1. The first resistor R1 is connected to the first input In1, and the second resistor R2 is connected to the second input In2. Similarly, the last two inputs In3 and In4 are interconnected through the last two resistors R3 and R4, which are arranged on the second cooling unit CP2. The third resistor R3 is connected to the third input In3, and the fourth resistor R4 is connected to the fourth input In4. Then, the compensation line W1 connects all four inputs In1-In4 to each other.

[0090] In this way, two RF power amplifier stage components AU1, AU2 can be connected to each other.

[0091] In a second embodiment of the present application, if more than two RF power amplifier stage arrangements AU1, AU2 are connected to each other, several compensation lines may be connected together to form a star shape.

[0092] like Figure 5 As shown, the present application also discloses a radio frequency power supply system 12, comprising a power amplifier unit 10 in any of the above embodiments and an impedance matching circuit 11 electrically connected to the downstream end of the power amplifier unit 10. Through the above power amplifier unit, the operation reliability and stability of the radio frequency power supply system can be improved.

[0093] The impedance matching circuit 11 is designed to convert the input impedance of the plasma process at its output end into the output impedance of the power amplifier unit 10. For example, the design of such plasma processing systems and / or impedance matching circuits is described in the following public documents: DE102009001355A1, DE102011007597A1, DE102011007598A1, WO2021 / 209390A1, WO2021 / 255250A1.

[0094] like Figure 5 As shown, the present application also discloses a plasma process supply system 17, characterized in that it includes the power amplifier unit 10 shown in any of the above embodiments and an impedance matching circuit 11 located downstream of the circuit, the power amplifier unit 10 is connected to the input end of the impedance matching circuit 11, and the output end of the impedance matching circuit 11 is connected to the plasma process component 13. Through the above power amplifier unit, the operation reliability and stability of the plasma process supply system can be improved.

[0095] Wherein, the plasma process component 13 has:

[0096] - A substrate 15 for a plasma 16 treatment, such as a coating or etching treatment.

[0097] An electrode 14 for coupling radio frequency power into the plasma chamber 13 in order to ignite and maintain the plasma 16 .

[0098] The impedance matching circuit 11 is designed to convert the input impedance of the plasma process at its output end into the output impedance of the power amplifier unit 10. For example, the design of such plasma processing systems and / or impedance matching circuits is described in the following public documents: DE102009001355A1, DE102011007597A1, DE102011007598A1, WO2021 / 209390A1, WO2021 / 255250A1.

[0099] In the prior art, RF power amplifier stage components cannot usually be arranged very close to each other because they:

[0100] - generally generate so much heat that they must be cooled by more cooling devices, and / or

[0101] -Due to their high power generation, the currents and voltages are so high that they can negatively influence each other by emitting high frequency fields.

[0102] One solution is to place the RF power amplifier stages further apart and / or to shield them appropriately. In both cases, the outputs of the RF power amplifier stage components can only be arranged at a certain distance from each other. Therefore, this limitation has an unfavorable impact on the design of the power combiner. However, this disadvantage can be overcome by favorable interconnection with the above-mentioned transmission line arrangement and coupling line arrangement.

[0103] Ordinal numbers such as "first" and "second" described in the present application are only for indication and do not have any other meaning, such as a particular order, etc. In addition, for example, the term "first element" itself does not mean the existence of the "second element", and the term "second element" itself does not mean the existence of the "first element".

[0104] The term “a pair” as used herein may encompass not only a configuration in which the pair of elements have the same shape or structure as each other, but also a configuration in which the pair of elements have different shapes or structures from each other.

[0105] Finally, terms such as “substantially”, “about” and “approximately” as used herein mean a reasonable amount of deviation of the modified term such that the end result is not significantly changed.

[0106] Obviously, various variations and modifications of the present application are possible according to the above teachings. Therefore, it is understood that the present application can be implemented within the scope of the attached claims rather than as described in detail herein. Those skilled in the art should understand that the above embodiments do not limit the present application in any form, and any technical solution obtained by equivalent substitution or equivalent transformation falls within the scope of protection of the present application.

Claims

1. A power amplifier unit (10) for coupling a radio frequency signal, characterized in that: include: at least two radio frequency power amplifier stage components (AU), each of the power amplifier stage components (AU) having an output impedance; at least two heat dissipation modules (CS), the heat dissipation modules (CS) corresponding to the power amplifier stage components (AU) one by one, and the impedance components of the radio frequency power amplifier stage components (AU) are respectively arranged on the corresponding heat dissipation modules (CS); The output end of each of the radio frequency power amplifier stage components (AU) is electrically connected to a transmission line component (TL), and each of the transmission line components (TL) has a line impedance (Z'), and the line impedance (Z') is equal to the output impedance of the corresponding radio frequency power amplifier stage component (AU); A coupled line component (TLC) is electrically connected to all the transmission line components (TL), and the coupled line component (TLC) has a coupled line impedance (ZC').

2. The power amplifier unit according to claim 1, characterized in that: The coupled line impedance (ZC') and the line impedance (Z') satisfy a preset impedance relationship, and the preset impedance relationship is that the coupled line impedance (ZC') is equal to the reciprocal of the sum of the reciprocals of all line impedances (Z').

3. The power amplifier unit according to claim 1 or 2, characterized in that: The coupled line impedance (ZC') and the line impedance (Z') satisfy a preset impedance relationship, and the preset impedance relationship is line impedance (Z') = n*coupled line impedance (ZC'), where n is the number of the transmission line components (TL).

4. The power amplifier unit according to claim 3, characterized in that: At least part of the transmission line assembly (TL) has: a signal conductor (SL) for transmitting a corresponding output signal of the radio frequency power amplifier stage component (AU); A reference conductor (BL) is provided for electrical connection to a constant potential relative to a reference ground.

5. The power amplifier unit according to claim 3, characterized in that: The coupled line component (TLC) has: a coupled signal conductor (SLC) designed to transmit a combined output signal of a plurality of said RF power amplifier stage components (AU); A coupled reference conductor (BLC) is electrically connected to a constant potential relative to a reference ground.

6. The power amplifier unit according to claim 4 or 5, characterized in that: At least one of the transmission line components (TL) and / or the coupled line components (TLC) is designed as a microstrip line (MSL).

7. The power amplifier unit according to claim 4 or 5, characterized in that: At least one of the transmission line components (TL) and / or the coupled line components (TLC) is designed as a coaxial line (CXL).

8. The power amplifier unit according to claim 3, characterized in that: The radio frequency power amplifier stage assembly (AU) is arranged on a printed circuit board (PCB), and the transmission line assembly (TL) is electrically connected to electrical contacts of corresponding printed circuit boards (PCB).

9. The power amplifier unit according to claim 1, characterized in that: The heat dissipation modules (CS) are all arranged on independent cooling units (CP).

10. The power amplifier unit according to claim 1, 2 or 9, characterized in that: A plurality of heat dissipation modules (CS) surround to form a heat dissipation space (V1).

11. The power amplifier unit according to claim 10, characterized in that: At least part of the transmission line component (TL) and / or the coupled line component (TLC) is disposed in the heat dissipation space (V1).

12. The power amplifier unit according to claim 10, characterized in that: At least part of the radio frequency power amplifier stage components (AU) are located outside the heat dissipation space (V1).

13. The power amplifier unit according to claim 1, characterized in that: Each radio frequency power amplifier stage assembly (AU) comprises a plurality of amplifier stages (AS), and the output ends of all the amplifier stages (AS) are commonly connected to a power combiner (1a), wherein the power combiner comprises: Multiple inputs and one output; a plurality of coupling elements, wherein inputs of the coupling elements are connected to outputs of the power combiner; An energy absorber is electrically connected to an input of the power combiner.

14. The power amplifier unit according to claim 1 or 13, characterized in that: The power amplifier unit further comprises a power combination component (1), the power combination component comprising: a power combiner, all of the transmission line components being electrically connected to an output of the power combiner; A compensation line (W1), the compensation line is electrically connected to all the power combiners.

15. The power amplifier unit according to claim 10, characterized in that: The power amplifier unit comprises at least one measuring device (M1) arranged at the location of at least one of the transmission line components (TL) and / or the coupled line components (TLC) for measuring a power value describing the location.

16. A radio frequency power supply system, characterized in that: The invention comprises a power amplifier unit as claimed in any one of claims 1 to 15 and an impedance matching circuit (11) located downstream of the power amplifier unit.

17. A plasma process supply system, characterized in that: It comprises a power amplifier unit as described in any one of claims 1 to 15 and an impedance matching circuit (11) located downstream of the circuit, wherein the power amplifier unit (10) is connected to the input end of the impedance matching circuit (11), and the output end of the impedance matching circuit (11) is connected to a plasma process component.

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