CUP structure capable of being cleaned in semiconductor gluing process

Abstract

The utility model belongs to the technical field of semiconductor gluing equipment, and particularly relates to a CUP structure capable of being cleaned in a semiconductor gluing process, which comprises a bottom layer CUP, a middle layer CUP and an upper layer CUP. Wherein a cleaning liquid hole channel A, a liquid inlet A and a liquid outlet A are formed in the middle-layer CUP, and a cleaning liquid hole channel B, a liquid inlet B and a liquid outlet B are formed in the upper-layer CUP. According to the utility model, in the semiconductor gluing process, an external cleaning liquid source is started, cleaning liquid is supplied to the cleaning liquid hole channel A of the middle-layer CUP and the cleaning liquid hole channel B of the upper-layer CUP through the external cleaning liquid pipeline, and the cleaning liquid flows downwards along the outer peripheral inclined surface part of the middle-layer CUP and the inner peripheral inclined surface part of the upper-layer CUP respectively; therefore, the effect of cleaning the photoresist on the surface of the CUP in the technological process can be achieved, equipment does not need to be stopped frequently to process the photoresist on the surface of the CUP structure, the technological effect can be guaranteed, the maintenance time and the labor cost are saved, and meanwhile the productivity can be improved.

Description

Technical Field

[0001] This utility model belongs to the field of semiconductor coating equipment technology, specifically a CUP structure that can be cleaned during the semiconductor coating process. Background Technology

[0002] In current semiconductor coating processes, photoresist is applied to the wafer surface. The high-speed rotation of the wafer throws excess photoresist onto the CUP structure, which is designed to prevent droplet splashing. A typical CUP structure includes a bottom CUP, a middle CUP, and a top CUP. The high-speed rotation of the wafer throws excess photoresist onto the outer beveled surfaces of the middle CUP and the inner beveled surfaces of the top CUP. After prolonged processing, photoresist deposits on these surfaces, which can easily contaminate the wafer and affect its quality in subsequent operations, necessitating cleaning of the CUP structure.

[0003] Due to the structural limitations of semiconductor equipment, existing processes generally require additional steps to clean the photoresist on the CUP surface, or the CUP structure needs to be removed for manual cleaning of the photoresist during regular maintenance when the equipment is shut down, which wastes processing time and labor costs. Utility Model Content

[0004] To address the aforementioned problems, the purpose of this invention is to provide a CUP structure that can be cleaned during semiconductor coating processes.

[0005] The objective of this utility model is achieved through the following technical solution:

[0006] A CUP structure capable of being cleaned during semiconductor coating processes includes a bottom CUP, a middle CUP, and a top CUP. The bottom CUP has a wafer receiving structure through-hole A formed in its center. A liquid recovery tank is formed between the top outer periphery of the bottom CUP and the inner wall of the wafer receiving structure through-hole A. The bottom CUP has several liquid recovery ports connected to the liquid recovery tank at its bottom. The middle CUP is mounted on the wafer receiving structure through-hole A of the bottom CUP. The middle part of the upper CUP has a wafer receiving structure through-hole B that is connected to the wafer receiving structure through-hole A. The outer periphery of the middle CUP has an outer peripheral bevel that gradually slopes downward from the inside to the outside. The outermost edge of the outer peripheral bevel of the middle CUP extends to the liquid recovery tank of the bottom CUP. The bottom of the upper CUP is connected to the outer periphery top of the bottom CUP. The middle part of the upper CUP has a wafer through-hole. The inner periphery of the upper CUP has an inner peripheral bevel that gradually slopes downward from the inside to the outside.

[0007] The middle layer CUP has a cleaning fluid channel A inside. The inner wall of the wafer receiving structure through-hole B of the middle layer CUP has several inlet ports A that are connected to the cleaning fluid channel A. The middle layer CUP has several outlet ports A at positions corresponding to the outer peripheral inclined surface of the middle layer CUP. Each outlet port A is connected to the cleaning fluid channel A.

[0008] The upper CUP has a cleaning fluid channel B inside, and a number of inlets B connected to the cleaning fluid channel B are opened on the outer peripheral surface of the upper CUP. A number of outlets B are opened on the upper CUP at positions corresponding to the inner peripheral inclined surface of the upper CUP, and each outlet B is connected to the cleaning fluid channel B.

[0009] The axial centerline of each of the liquid inlets A is perpendicular to the axial centerline of the middle layer CUP.

[0010] The cleaning fluid channel A is annular, and each of the fluid outlets A is evenly distributed circumferentially according to the middle layer CUP.

[0011] The axial centerline of each of the liquid outlets A is perpendicular to the axial centerline of the middle layer CUP.

[0012] Each of the aforementioned liquid outlets A is located near the top surface of the middle layer CUP.

[0013] The top surface of the middle layer CUP extends outward and is provided with a baffle that can block each of the liquid outlets A.

[0014] The axial centerline of each of the liquid inlets B is perpendicular to the axial centerline of the upper CUP.

[0015] The cleaning fluid channel B is annular, and each of the fluid outlets B is evenly distributed circumferentially according to the upper CUP.

[0016] Each of the liquid outlets B is located near the wafer through-hole of the upper CUP.

[0017] The axial centerline of each of the liquid outlets B is perpendicular to the inner circumferential bevel of the upper CUP.

[0018] The advantages and positive effects of this utility model are as follows:

[0019] This invention allows for the supply of cleaning fluid to the middle-layer CUP and the upper-layer CUP via external cleaning fluid pipelines during the semiconductor coating process. The cleaning fluid flows downwards along the outer circumferential bevel of the middle-layer CUP and the inner circumferential bevel of the upper-layer CUP, respectively. This achieves the effect of cleaning the photoresist on the CUP surface during the process without frequently stopping the equipment to treat the photoresist on the CUP structure. This ensures the process effect, saves maintenance time and labor costs, and also increases production capacity. Attached Figure Description

[0020] Figure 1 This is a schematic cross-sectional view of the connection between the bottom CUP, middle CUP and top CUP of this utility model.

[0021] Figure 2 This is a three-dimensional structural diagram of the bottom CUP of this utility model;

[0022] Figure 3 This is a three-dimensional structural diagram of the middle-layer CUP of this utility model;

[0023] Figure 4 This is a schematic cross-sectional view of the middle-layer CUP of this utility model;

[0024] Figure 5 This is a three-dimensional structural diagram of the upper CUP of this utility model;

[0025] Figure 6 This is a cross-sectional structural diagram of the upper CUP of this utility model.

[0026] In the diagram: 1 is the bottom CUP, 101 is the liquid recovery tank, and 102 is the liquid recovery port;

[0027] 2 is the middle layer CUP, 201 is the outer peripheral inclined part, 202 is the cleaning fluid channel A, 203 is the liquid inlet A, 204 is the liquid outlet A, and 205 is the baffle.

[0028] 3 is the upper CUP, 301 is the inner circumferential bevel, 302 is the cleaning fluid channel B, 303 is the inlet B, and 304 is the outlet B. Detailed Implementation

[0029] The following is in conjunction with the appendix Figure 1-6 The present invention will be described in further detail.

[0030] A CUP structure capable of being cleaned during semiconductor coating processes includes a bottom CUP 1, a middle CUP 2, and a top CUP 3. The bottom CUP 1 has a wafer receiving structure through-hole A in its center. A liquid recovery tank 101 is formed between the top outer periphery of the bottom CUP 1 and the inner wall of the wafer receiving structure through-hole A. The bottom CUP 1 has several liquid recovery ports 102 connected to the liquid recovery tank 101 at its bottom. The middle CUP 2 is mounted on the wafer receiving structure through-hole A of the bottom CUP 1. A wafer receiving structure through-hole B, communicating with the wafer receiving structure through-hole A, is formed in the center of the middle CUP 2. The outer periphery of the middle CUP 2 has an outer peripheral slope 201 that gradually slopes downwards from the inside out. The outermost edge (i.e., the lowest point) of the outer peripheral slope 201 of the middle CUP 2 extends to the bottom CUP 3. Above the liquid recovery tank 101, the bottom of the upper CUP 3 is connected to the top of the outer periphery of the lower CUP 1. A wafer through-hole is formed in the middle of the upper CUP 3, and an inner peripheral bevel 301 that gradually slopes downward from the inside to the outside is formed on the inner periphery of the upper CUP 3. The basic structure of the lower CUP 1, the middle CUP 2, and the upper CUP 3, as well as the connection and installation structure between them, are all existing technologies.

[0031] The present invention proposes a CUP structure capable of cleaning during semiconductor coating processes. The middle layer CUP 2 has a cleaning fluid channel A 202 internally. Two inlets A 203, connected to the cleaning fluid channel A 202, are formed on the inner wall of the wafer receiving structure through-hole B of the middle layer CUP 2. Several outlets A 204, corresponding to the outer peripheral bevel 201 of the middle layer CUP 2, are formed on the middle layer CUP 2, each connected to the cleaning fluid channel A 202. The upper layer CUP 3 has a cleaning fluid channel B 302 internally. Two inlets B 303, connected to the cleaning fluid channel B 302, are formed on the outer peripheral surface of the upper layer CUP 3. Several outlets B 304, corresponding to the inner peripheral bevel 301 of the upper layer CUP 3, are formed on the upper layer CUP 3, each connected to the cleaning fluid channel B 302. 302 is connected.

[0032] Specifically, in this embodiment, the two liquid inlets A 203 are positioned symmetrically, and the axial centerline of each liquid inlet A 203 is perpendicular to the axial centerline of the middle layer CUP 2. Each liquid inlet A 203 can be connected to an external cleaning fluid pipeline passing through port A of the wafer receiving structure of the bottom layer CUP 1 and port B of the wafer receiving structure of the middle layer CUP 2, respectively. The connection method with the external cleaning fluid pipeline adopts existing technology, such as direct insertion of the tubing or liquid inlet through a micro-connector.

[0033] Specifically, in this embodiment, the cleaning fluid channel A 202 is annular, and each outlet A 204 is evenly distributed circumferentially around the middle layer CUP 2. The axial center line of each outlet A 204 is perpendicular to the axial center line of the middle layer CUP 2. The number of outlets A 204 can be arbitrarily set according to needs, provided that the outflowing cleaning fluid can cover the surface of the outer peripheral inclined part 201 of the middle layer CUP 2. In this embodiment, there are 90 outlets A 204.

[0034] Specifically, in this embodiment, each liquid outlet A 204 is located near the top surface of the middle layer CUP 2, that is, at the highest point of the outer peripheral inclined surface 201 of the middle layer CUP 2. The top surface of the middle layer CUP 2 extends outward and is provided with a baffle 205 that can block each liquid outlet A 204, which can effectively prevent the photoresist thrown off the wafer from blocking the liquid outlet A 204.

[0035] Specifically, in this embodiment, the two inlets B 303 are positioned symmetrically, and the axial centerline of each inlet B 303 is perpendicular to the axial centerline of the upper CUP 3. Each inlet B 303 can be connected to an external cleaning fluid pipeline coming from the outside of the upper CUP 3. The connection method with the external cleaning fluid pipeline adopts existing technology, such as direct insertion or using a micro-connector.

[0036] Specifically, in this embodiment, the cleaning fluid channel B 302 is annular, and the outlets B 304 are evenly distributed circumferentially around the upper CUP 3. The number of outlets B 304 can be arbitrarily set as needed, provided that the outflowing cleaning fluid can cover the surface of the inner circumferential beveled portion 301 of the upper CUP 3. In this embodiment, there are 120 outlets B 304. In this embodiment, each outlet B 304 is located near the wafer penetration point of the upper CUP 3, that is, at the highest point of the inner circumferential beveled portion 301 of the upper CUP 3. In this embodiment, the axial centerline of each outlet B 304 is perpendicular to the inner circumferential beveled portion 301 of the upper CUP 3, which allows the cleaning fluid to flow stably and effectively downwards along the inner circumferential beveled portion 301 of the upper CUP 3.

[0037] During the semiconductor coating process, specifically, while performing coating or trimming steps, an external cleaning fluid source can be turned on and supplied through external cleaning fluid pipelines to the cleaning fluid channels A 202 of the middle layer CUP 2 and B 302 of the upper layer CUP 3. Given a specific liquid pressure and flow rate, the cleaning fluid quickly fills the cleaning fluid channels A 202 and B 302 within a short time (within a few seconds). After the cleaning fluid is filled, the cleaning fluid will simultaneously flow out from each inlet A 203 and outlet B 304, flowing downwards along the outer peripheral bevel 201 of the middle layer CUP 2 and the inner peripheral bevel 301 of the upper layer CUP 3, ultimately flowing into the liquid recovery tank 101 and being discharged from the liquid recovery outlet 102. This achieves the effect of cleaning the photoresist on the CUP surface during the process without frequently stopping the equipment to treat the surface photoresist of the CUP structure.

Claims

1. A CUP structure capable of being cleaned in a semiconductor coating process, comprising a bottom CUP (1), a middle CUP (2) and an upper CUP (3), wherein a wafer receiving structure through-port A is formed in the middle of the bottom CUP (1), a liquid recovery groove (101) is formed between the outer periphery top of the bottom CUP (1) and the inner wall of the wafer receiving structure through-port A of the bottom CUP (1), a plurality of liquid recovery ports (102) connected to the liquid recovery groove (101) are provided at the bottom of the bottom CUP (1), the middle CUP (2) is mounted on the wafer receiving structure through-port A of the bottom CUP (1), and the middle CUP (2) A wafer receiving structure through-port B connected to the wafer receiving structure through-port A is formed in the middle of the middle layer CUP (2); an outer peripheral inclined portion (201) gradually tilted downward from the inside to the outside is formed on the outer periphery of the middle layer CUP (2); the outermost peripheral edge of the outer peripheral inclined portion (201) of the middle layer CUP (2) extends to above the liquid recovery tank (101) of the bottom layer CUP (1); the bottom of the upper layer CUP (3) is connected to the outer peripheral top of the bottom layer CUP (1); a wafer through-port is formed in the middle of the upper layer CUP (3); an inner peripheral inclined portion (301) gradually tilted downward from the inside to the outside is formed on the inner periphery of the upper layer CUP (3); the characteristics are: A cleaning liquid channel A (202) is provided inside the middle layer CUP (2); a plurality of liquid inlets A (203) connected to the cleaning liquid channel A (202) are provided on the inner wall of the wafer receiving structure through-port B of the middle layer CUP (2); a plurality of liquid outlets A (204) are provided at positions on the middle layer CUP (2) corresponding to the outer peripheral inclined surface (201) of the middle layer CUP (2); and each of the liquid outlets A (204) is respectively connected to the cleaning liquid channel A (202); A cleaning liquid channel B (302) is provided inside the upper layer CUP (3), a plurality of liquid inlets B (303) connected to the cleaning liquid channel B (302) are provided on the outer peripheral surface of the upper layer CUP (3), and a plurality of liquid outlets B (304) are provided at positions on the upper layer CUP (3) corresponding to the inner peripheral inclined surface (301) of the upper layer CUP (3), and each of the liquid outlets B (304) is respectively connected to the cleaning liquid channel B (302).

2. A CUP structure capable of being cleaned in a semiconductor coating process according to claim 1, characterized in that: The axial centerline of each of the liquid inlets A (203) is perpendicular to the axial centerline of the middle layer CUP (2).

3. A CUP structure capable of being cleaned in a semiconductor coating process according to claim 1, characterized in that: The cleaning liquid channel A (202) is annular, and the liquid outlets A (204) are evenly distributed in the circumferential direction of the middle layer CUP (2).

4. The CUP structure capable of being cleaned in a semiconductor coating process according to claim 1, characterized in that: The axial centerline of each of the liquid outlets A (204) is perpendicular to the axial centerline of the middle layer CUP (2).

5. The CUP structure capable of being cleaned in a semiconductor coating process according to claim 1, characterized in that: Each of the liquid outlets A (204) is located close to the top surface of the middle layer CUP (2).

6. The CUP structure capable of being cleaned in a semiconductor coating process according to claim 1, characterized in that: The top surface of the middle layer CUP (2) is provided with a blocking edge portion (205) extending toward the outer periphery and capable of blocking each of the liquid outlets A (204).

7. The CUP structure capable of being cleaned in a semiconductor coating process according to claim 1, characterized in that: The axial centerline of each of the liquid inlets B (303) is perpendicular to the axial centerline of the upper CUP (3).

8. The CUP structure capable of being cleaned in a semiconductor coating process according to claim 1, characterized in that: The cleaning liquid channel B (302) is annular, and the liquid outlets B (304) are evenly distributed in the circumferential direction of the upper layer CUP (3).

9. The CUP structure capable of being cleaned in a semiconductor coating process according to claim 1, characterized in that: Each of the liquid outlets B (304) is located close to the wafer through-hole of the upper CUP (3).

10. The CUP structure capable of being cleaned in a semiconductor coating process according to claim 1, characterized in that: The axial centerline of each of the liquid outlets B (304) is perpendicular to the inner circumferential inclined surface (301) of the upper CUP (3).

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