Wafer warping degree measuring device
By designing a measuring device including wafer bearing assembly and mechanical sensing elements, the problem of complex operation and insufficient convenience of wafer warpage measurement instruments in the prior art is solved, and fast and accurate warpage measurement is achieved, and the production line needs are met.
Patent Information
- Application Number
- CN202421630742.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-10
- Publication Date
- 2025-05-02
- Estimated Expiration
- 2034-07-10
AI Technical Summary
In the prior art, wafer warpage measurement instruments are complex in operation, their convenience needs to be improved, and measurement errors are easily generated.
A measuring device is designed including a wafer bearing assembly and at least one mechanical sensing element, which contacts the wafer to be measured during movement, and quickly measures the warpage by obtaining the height difference between the highest point and the lowest point of the wafer.
It realizes rapid and accurate measurement of wafer warpage, simplifies operational processes, reduces costs, improves measurement convenience, and meets the needs of the production line.
Smart Images
Figure CN222826357U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the field of integrated circuit manufacturing and measurement, and relates to a wafer warpage measurement device. Background Art
[0002] Wafer warpage refers to the problem of wafer bending and deformation during the semiconductor manufacturing process. The causes of this problem include thermal stress, mechanical stress, chemical corrosion, and material non-uniformity. It is a common semiconductor process problem. Wafer warpage may have an adverse effect on the subsequent processing, manufacturing and use of semiconductor devices. For example, during the photolithography process, wafer warpage may cause inaccurate light projection, thereby affecting the accuracy of pattern transfer; during the cutting and packaging stages, wafer warpage may also cause wafer breakage, poor packaging or reduced packaging accuracy, seriously affecting product quality. Therefore, the detection of wafer warpage during chip manufacturing plays an indispensable role in ensuring process control in the semiconductor manufacturing process, improving product yield and device performance.
[0003] At present, the detection methods for wafer warpage include non-contact measurement methods such as optical interferometry and X-ray diffraction. Among them, the optical interferometry is based on the principle of light interference. The warpage of the wafer is calculated by observing the interference pattern of light waves reflected on the wafer surface. The X-ray diffraction method uses the diffraction phenomenon of X-rays inside the wafer to calculate the degree of wafer warpage by analyzing the diffraction pattern. In the above existing methods, in addition to the expensive measuring instruments that increase production costs, the requirements for the characteristics of the wafer itself (for example, cleanliness, crystallinity, etc.) or the test environment are relatively strict, and measurement errors are prone to occur. In addition, the operating steps of the test instrument are complicated, and the convenience of testing needs to be improved.
[0004] Therefore, how to provide a wafer warpage measurement device to achieve rapid measurement of wafer warpage has become an important technical problem that needs to be solved urgently by those skilled in the art.
[0005] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because they are described in the background technology section of the present application. Utility Model Content
[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a wafer warpage measurement device to solve the problem that the wafer warpage measurement instrument in the prior art is complicated to operate and its convenience needs to be improved.
[0007] In order to achieve the above-mentioned purpose and other related purposes, the utility model provides a wafer warpage measurement device, comprising:
[0008] A wafer carrying assembly, used for carrying a wafer to be tested, wherein the wafer to be tested comprises a first surface and a second surface arranged opposite to each other in a first direction;
[0009] At least one mechanical sensing element is movably disposed on one side of the wafer to be tested along the first direction so as to come into contact with the first surface or the second surface during movement relative to the wafer to be tested, and a side of the mechanical sensing element close to the wafer to be tested is parallel to the second direction, and the second direction is perpendicular to the first direction.
[0010] Optionally, the wafer warpage measuring device includes two mechanical sensing elements, and the two mechanical sensing elements are arranged on opposite sides of the wafer to be measured in the first direction.
[0011] Optionally, the first direction includes a vertical direction or a horizontal direction.
[0012] Optionally, the mechanical sensing element includes at least one of a gravity sensor and an elastic force sensor.
[0013] Optionally, the wafer carrying assembly includes a plurality of separately arranged carrying racks, each of which has a carrying plane for carrying the wafer to be tested, and the carrying plane is parallel to the second direction.
[0014] Optionally, the wafer warpage measuring device further includes a supporting platform having a supporting surface, the wafer supporting assembly is fixed on the supporting surface, and the supporting surface is parallel to the second direction.
[0015] Optionally, the wafer warpage measuring device further comprises a supporting assembly, wherein the supporting assembly is telescopically adjustable in the first direction, and the mechanical sensing element is connected above the supporting assembly to move between an initial position and a target position along with the telescopic adjustment of the supporting assembly.
[0016] Optionally, when the mechanical sensing element is at the initial position, a distance between a surface of the mechanical sensing element close to the wafer to be measured and the carrying plane is a fixed value.
[0017] Optionally, the wafer warpage measuring device further comprises a position detection element, and the position detection element is located on one side of the mechanical sensing element to detect the position of the mechanical sensing element.
[0018] Optionally, the center of the mechanical sensing element coincides with the projection of the center of the wafer to be measured in the first direction.
[0019] As described above, the wafer warpage measuring device of the utility model includes a wafer supporting assembly and a mechanical sensing element. The mechanical sensing element comes into contact with the wafer to be measured during movement to quickly obtain the precise position of the lowest point of the wafer to be measured, and then the warpage of the wafer to be measured is obtained based on the height difference between the highest point and the lowest point of the wafer to be measured. The measuring device has a simple overall structure, low cost and is easy to use. It can quickly measure the wafer warpage to meet the needs of the production line. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 Shown is a simplified structural schematic diagram of a wafer warpage measurement device in a first embodiment of the present invention.
[0021] Figure 2 It is a simplified structural schematic diagram of the first embodiment of the present invention when the mechanical sensing element in the wafer warpage measurement device moves to contact the wafer to be measured.
[0022] Figure 3 Shown is a working principle diagram of the wafer warpage measurement device of the utility model in the first embodiment and the second embodiment.
[0023] Figure 4 It is shown as a flow chart of performing a binary iterative operation based on the first virtual height value Z1 and the second virtual height value Z2.
[0024] Figure 5 It is a simplified structural diagram of the wafer warpage measurement device in the second embodiment of the present invention.
[0025] Figure 6 The figure shows the working principle of the wafer warpage measurement device in the third embodiment of the present invention.
[0026] Description of Reference Numerals
[0027] 10 Wafer carrier assembly
[0028] 11 Carrying frame
[0029] 20 Mechanical sensing element
[0030] 21 The mechanical sensing element is close to the side of the wafer to be tested
[0031] 30 Wafers to be tested
[0032] 31 First Surface
[0033] 32 Second Surface
[0034] 40 Support components
[0035] 50 Support platform
[0036] 51 Support surface
[0037] 52 Receiving slot DETAILED DESCRIPTION
[0038] The following is an explanation of the implementation of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.
[0039] See also Figures 1 to 6 It should be noted that the illustrations provided in this embodiment are only used to schematically illustrate the basic concept of the utility model, and the drawings only show the components related to the utility model rather than the number, shape and size of the components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.
[0040] Embodiment 1
[0041] This embodiment provides a wafer warpage measurement device (hereinafter referred to as "measurement device"), see Figure 1 , which is a simplified structural diagram of the measuring device, and the measuring device includes a wafer supporting component 10 and at least one mechanical sensing element 20.
[0042] Specifically, the wafer supporting assembly 10 is used to support a wafer to be tested 30, and the wafer to be tested 30 includes a first surface 31 and a second surface 32 arranged opposite to each other in a first direction; the mechanical sensing element 20 is movably arranged on one side of the wafer to be tested 30 along the first direction so as to come into contact with the first surface 31 or the second surface 32 during movement relative to the wafer to be tested 30, and a side 21 of the mechanical sensing element 20 close to the wafer to be tested 30 is parallel to the second direction, and the second direction is perpendicular to the first direction.
[0043] As an example, the first direction includes a vertical direction or a horizontal direction, and correspondingly, the second direction includes a horizontal direction or a vertical direction. In this embodiment, the first direction is a vertical direction ( Figure 1 The second direction is the horizontal direction ( Figure 1 XY direction as shown in ).
[0044] As an example, the mechanical sensing element 20 includes at least one of a gravity sensor and an elastic force sensor. In this embodiment, the mechanical sensing element 20 is a gravity sensor, and the gravity sensor is located below the wafer to be tested 30; in another example, the mechanical sensing element may also be an elastic force sensor and the elastic force sensor is arranged above the wafer to be tested.
[0045] As an example, the center of the mechanical sensing element 20 coincides with the projection of the center of the wafer to be measured 30 in the first direction.
[0046] As an example, the wafer carrier assembly 10 includes a plurality of separately arranged carriers 11, and the carrier 11 has a carrying plane (not marked) to carry the wafer 20 to be tested, and the carrying plane is parallel to the second direction. When the wafer carrier assembly 10 carries the wafer 20 to be tested for warpage measurement, it is necessary to keep the carrying planes of the plurality of carriers 11 flush. When the wafer carrier assembly 10 is composed of a plurality of the carriers 11, the area formed between the plurality of the carriers 11 can be used as a moving space for the mechanical sensing element 20, so as to facilitate the mechanical sensing element 20 to have good contact with the first surface 31 or the second surface 32 of the wafer 30 to be tested. Preferably, the length of the carrier 11 in the first direction is adjustable to adjust the height value of the above-mentioned plane according to actual measurement needs, thereby improving the convenience of operation.
[0047] Furthermore, the carrier 11 is provided with a groove (not marked), and the groove is used to embed the edge of the wafer 30 to be tested to achieve the bearing and fixation of the wafer 30 to be tested, so as to avoid the subsequent movement of the mechanical sensing element 20 to contact the wafer 30 to be tested, causing the movement of the wafer 30 to be tested and affecting the measurement effect. When the carrier 11 is provided with the groove, the bottom surface of the groove serves as the bearing plane. Of course, in other embodiments, other surfaces of the groove can also be used as bearing planes or other methods can be used to achieve fixed bearing of the wafer 30 to be tested.
[0048] As an example, the wafer warpage measuring device further includes a position detection element (not shown), which is located on one side of the mechanical sensing element 20 to detect the position of the mechanical sensing element 20. Based on the position detection element, the position of the mechanical sensing element when in contact with the wafer to be measured is detected to obtain the height value of the lowest point of one side of the wafer to be measured close to the mechanical sensing element.
[0049] As an example, see Figure 2, which is a simplified structural diagram of the mechanical sensing element in the measuring device when it moves to contact the wafer to be measured. The wafer warpage measuring device also includes a support component 40, and the support component 40 is telescopically adjustable in the first direction (please refer to Figure 1 and Figure 2 ), the mechanical sensing element 20 is connected to the top of the support assembly 40 to move between the initial position and the target position with the telescopic adjustment of the support assembly 40. To avoid ambiguity, the "initial position" refers to the calibrated position of the mechanical sensing element when the measuring device is not in operation, and the "target position" refers to the position of the mechanical sensing element of the measuring device in operation when it contacts the wafer to be measured and outputs a mechanical sensing value during the process of moving with the telescopic adjustment of the support assembly (the target position may vary when measuring wafers to be measured with different wafer warpages). Furthermore, the support assembly may include one or more separately arranged telescopic and adjustable support frames.
[0050] For further information, see Figure 3 , which shows the working principle diagram of the measuring device when measuring the warpage of the wafer to be measured (corresponding to Figure 2 When the mechanical sensing element 20 is in the initial position (i.e. Figure 3 When the distance between the mechanical sensing element 20 and the side 21 of the wafer 30 to be tested and the carrying plane is fixed (i.e. Figure 3 The distance H1 shown in the figure is a fixed value), which is equivalent to that when the wafer 30 to be tested is placed on the wafer supporting assembly 10, the position of the highest point of the side of the wafer 30 to be tested facing the mechanical sensing element 20 (i.e., the second surface 32) is determined, and then the height is compared with the lowest point of the side of the wafer 30 to be tested facing the mechanical sensing element 20 detected by the mechanical sensing element 20, so that the wafer warpage can be quickly obtained. The "wafer warpage" refers to the degree of warpage deformation at the position where the maximum warpage deformation occurs in the thickness direction of the wafer to be tested.
[0051] As an example, the wafer warpage measuring device further comprises a supporting platform 50 having a supporting surface 51, the wafer bearing assembly 10 is fixed on the supporting surface 51, and the supporting surface 51 extends along the second direction. The supporting surface is used as a measurement reference surface to prevent the fixing surface of the wafer bearing assembly from deviating from the horizontality or verticality requirements and causing errors in the measurement results.
[0052] As an example, the support platform 50 further includes a receiving groove 52 which opens from the support surface 51 and extends along the first direction to at least partially penetrate the support platform 50, and the support assembly 40 is located in the receiving groove 52. Preferably, when the mechanical sensing element is connected to the top of the support assembly and does not start to move (i.e., the measuring device is in a non-working state and the mechanical sensing element is in an initial position), a side of the mechanical sensing element close to the wafer to be measured is flush with the support surface to facilitate measurement of the position of the mechanical sensing element.
[0053] For details, please refer to Figures 1 to 3 When the wafer to be tested is warped due to the process, one of the front and back surfaces of the wafer to be tested (for example, the second surface) will bulge outward along the thickness direction and have the lowest point of the wafer to be tested, and the other corresponding surface (for example, the first surface) will be recessed inward along the thickness direction and have the highest point of the wafer to be tested (i.e., the edge). The measuring device of this embodiment detects the distance between the highest point and the lowest point of the wafer to be tested in the thickness direction to achieve rapid detection of the warpage of the wafer to be tested. More specifically, when the wafer to be tested is carried on the wafer carrying assembly, the carrying planes of each carrying frame in the wafer carrying assembly can be kept in the same plane, and the distance between the plane and the side of the mechanical sensing element close to the wafer to be tested when the mechanical sensing element is in the initial position is a fixed value, so that the positions of the highest point and the lowest point of the wafer to be tested facing the mechanical sensing element are relatively fixed, and then the mechanical sensing element is moved relative to the wafer to be tested (the mechanical sensing element moves from the initial position shown by the dotted line to the target position shown by the solid line), so as to obtain the height value H2 of the position of the lowest point of the wafer to be tested facing the mechanical sensing element based on the position when the mechanical sensing element is in contact with the wafer to be tested, and the warping of the wafer to be tested can be quickly obtained by subtracting the two height values.
[0054] It should be noted that due to the limitation of motion accuracy, when the mechanical sensing element contacts the lowest point of the lower surface of the wafer to be measured during the process of moving relative to the wafer to be measured, the mechanical sensing element basically does not stop moving at the moment of contact with the wafer to be measured, but still moves slightly after contact until the mechanical sensing element senses the mechanical effect between it and the wafer to be measured (equivalent to the mechanical sensing element stopping only after it has contacted the wafer to be measured and outputs the detected mechanical sensing value). At this time, the position of the mechanical sensing element may be offset compared to the actual position of the lowest point of the lower surface of the wafer to be measured (offset in the direction close to the wafer to be measured), and the force output by the position detection element to the mechanical sensing element is detected. The height of the first position when the mechanical sensing value is obtained is detected (a first virtual height value Z1 is obtained); then, the mechanical sensing element is made to move slightly relative to the wafer to be measured in a direction away from the wafer to be measured, and after the mechanical sensing element no longer outputs the mechanical sensing value (equivalent to the mechanical sensing element no longer being in contact with the wafer to be measured), the position of the mechanical sensing element is detected by the position detection element (a second virtual height value Z2 is obtained). Similarly, the position of the mechanical sensing element at this time may also be offset from the actual position of the lowest point on the lower surface of the wafer to be measured (offset away from the wafer to be measured), and a binary search iterative operation is subsequently performed based on the first virtual height value Z1 and the second virtual height value Z2 detected by the position detection element (such as Figure 4 As shown) to obtain an approximate value Z of the height value of the position where the mechanical sensing element just touches the lowest point of the wafer to be tested, and the approximate value Z corresponds to the height H2 of the lowest point on the lower surface of the wafer to be tested.
[0055] This embodiment also provides a specific implementation of the measuring device, and the specific steps are as follows:
[0056] First, if Figure 1 As shown, the bearing planes of the bearing racks in the wafer bearing assembly 10 are adjusted to be on the same horizontal plane, and the wafer 30 to be tested is placed on the wafer bearing assembly 10. At this time, the highest point height of the side of the wafer 30 to be tested facing the mechanical sensing element 20 is H1, and the mechanical sensing element 20 is also at Figure 1 The initial position shown in ;
[0057] Then, the mechanical sensing element 20 is driven to make a first relative displacement relative to the wafer 30 to gradually approach the wafer 30 to be tested, and the movement of the mechanical sensing element 20 is immediately stopped when the mechanical sensing element 20 outputs a mechanical sensing value, and the position of the mechanical sensing element 20 at this time (referring to the position of the mechanical sensing element 20 close to the one side 21 of the wafer 30 to be tested, and the mechanical sensing element 20 is at the target position) is detected by the position detection element to obtain the first virtual height value Z1 of the lowest point of the wafer 30 to be tested, and the support assembly 40 can be adjusted by the adjustment device to realize the driving of the mechanical sensing element;
[0058] Afterwards, the mechanical sensing element 20 is driven to make a second relative displacement relative to the wafer 30 to gradually move away from the wafer 30 to be tested, and the movement of the mechanical sensing element 20 is immediately stopped when the mechanical sensing element 20 no longer outputs a mechanical sensing value, and the position of the mechanical sensing element 20 at this time is detected by the position detection element to obtain a second virtual height value Z2 of the lowest point of the wafer 30 to be tested toward the mechanical sensing element 20;
[0059] Next, if Figure 4 As shown, based on the first virtual height value Z1 and the second virtual height value Z2, the binary search iterative operation is performed several times to obtain the height value H2 of the lowest point of the side of the wafer 30 to be tested facing the mechanical sensing element 20. It should be noted that due to the limitation of motion accuracy and the minimum moving step length of the mechanical sensing element 20, the actual height value H2 may not be obtained after many iterative calculations. Therefore, it is preferred to use the binary search operation 3 to 5 times and then output the iterated Z1 and Z2, and use the average value of Z1 and Z2 as the approximate value Z of the height value. At this time, the approximate value Z obtained is closer to the real H2. Using the approximate value Z as the height value H2 can meet the accuracy requirements of the production line for wafer warpage measurement, and will not affect the measurement efficiency due to the number of iterative operations; it should be noted that although Figure 4 In the example, three iterations are used for illustration. In actual application, the number of iterations is reasonably set based on the accuracy requirement. The higher the accuracy requirement, the more iterations are needed, which will correspondingly extend the overall detection time.
[0060] Finally, the height value H1 is subtracted from the height value H2 to obtain the wafer warpage of the wafer 30 to be measured. After the measurement is completed, the measuring device is preferably returned to a non-working state, that is, the support assembly 40 is shortened to return the mechanical sensing element 20 to the initial position for the next measurement.
[0061] The wafer warpage measuring device of the present embodiment includes a wafer supporting assembly and a mechanical sensing element. The mechanical sensing element comes into contact with the wafer to be measured during movement to quickly obtain the precise position of the lowest point of the wafer to be measured, and then the warpage of the wafer to be measured is obtained based on the height difference between the highest point and the lowest point of the wafer to be measured. The measuring device has a simple overall structure, low cost and is easy to use. It can quickly measure the wafer warpage to meet the needs of the production line.
[0062] Embodiment 2
[0063] This embodiment provides a wafer warpage measurement device (hereinafter referred to as "measurement device"), and the measurement device of this embodiment is different from the first embodiment in that: in this embodiment, the first direction is a horizontal direction and the second direction is a vertical direction, see Figure 5 , which is a simplified structural diagram of the measuring device, and the measuring device includes a wafer supporting component 10 and at least one mechanical sensing element 20.
[0064] Specifically, the wafer supporting assembly 10 is used to support a wafer to be tested 30, and the wafer to be tested 30 includes a first surface 31 and a second surface 32 arranged opposite to each other in a first direction; the mechanical sensing element 20 is movably arranged on one side of the wafer to be tested 30 along the first direction so as to come into contact with the first surface 31 or the second surface 32 during movement relative to the wafer to be tested 30, and a side of the mechanical sensing element 20 close to the wafer to be tested 30 extends along the second direction, and the second direction is perpendicular to the first direction.
[0065] As an example, the first direction includes a vertical direction or a horizontal direction, and correspondingly, the second direction includes a horizontal direction or a vertical direction. In this embodiment, the first direction is a horizontal direction ( Figure 5 The second direction is the vertical direction ( Figure 5 in the Z direction as shown in Figure 2).
[0066] Embodiment 3
[0067] This embodiment provides a wafer warpage measurement device (hereinafter referred to as "measurement device"). The difference between the measurement device of this embodiment and the first and second embodiments is that the measurement device of this embodiment includes two mechanical sensing elements, while the measurement devices of the first and second embodiments only include one mechanical sensing element. Figure 1 or Figure 5 For better understanding, a simplified structural diagram of the measuring device is shown, which includes a wafer supporting assembly 10 and at least one force sensing element 20 .
[0068] Specifically, the wafer supporting assembly 10 is used to support a wafer to be tested 30, and the wafer to be tested 30 includes a first surface 31 and a second surface 32 arranged opposite to each other in a first direction; the mechanical sensing element 20 is movably arranged on one side of the wafer to be tested 30 along the first direction so as to come into contact with the first surface 31 or the second surface 32 during movement relative to the wafer to be tested 30, and a side of the mechanical sensing element 20 close to the wafer to be tested 30 extends along the second direction, and the second direction is perpendicular to the first direction.
[0069] As an example, Figure 6 As shown, the wafer warpage measuring device includes two mechanical sensing elements 20 , and the two mechanical sensing elements 20 are disposed on two opposite sides of the wafer 30 to be measured in the first direction.
[0070] Specifically, due to the warping deformation, one of the front and back surfaces of the wafer to be tested will bulge outward along the thickness direction and have the lowest point of the wafer to be tested, and the other corresponding surface will be recessed inward along the thickness direction and have the highest point of the wafer to be tested. Since the degree of wafer warping deformation may not be discernible to the naked eye, taking the measuring device in Example 1 as an example, when the wafer to be tested is placed on the wafer supporting device, the recessed side of the wafer to be tested may be facing the mechanical sensing element below. At this time, the corresponding point when the mechanical sensing element contacts the wafer to be tested is not the lowest point of the outward protrusion of the wafer to be tested (manifested as the height detected by the mechanical sensing element being greater than the fixed height H1). It is necessary to manually adjust the placement direction of the wafer to be tested so that the protruding surface is facing the mechanical sensing element, and then re-execute the movement and height calculation steps of the mechanical sensing element, which affects the test efficiency and may also increase the risk of wear or breakage of the wafer to be tested. In this embodiment, two mechanical sensing elements are provided (please refer to Figure 6 ), after the wafer to be tested is placed on the wafer supporting assembly, the two mechanical sensing elements are moved at the same time to make them contact with both the front and back sides of the wafer to be tested. When the height value H21 corresponding to the mechanical sensing element located below the wafer to be tested is significantly greater than the fixed height H1, it means that the convex surface of the wafer to be tested is facing upward and the concave surface is facing downward. Then the height value H22 corresponding to the mechanical sensing element located above the wafer to be tested is the height of the highest point of the entire wafer to be tested, and the fixed height H1 is the height of the lowest point of the entire wafer to be tested. At this time, the warpage of the wafer to be tested can be quickly obtained by subtracting H22 from H1 and deducting the thickness value T of the wafer to be tested.
[0071] In summary, the wafer warpage measuring device of the utility model includes a wafer bearing assembly and a mechanical sensing element. The mechanical sensing element contacts the wafer to be measured during movement to quickly obtain the precise position of the lowest point of the wafer to be measured, and then obtains the warpage of the wafer to be measured based on the height difference between the highest point and the lowest point of the wafer to be measured. The overall structure of the measuring device is simple, low-cost and easy to use, and can quickly measure the wafer warpage to meet the needs of the production line. Therefore, the utility model effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value.
[0072] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the technology may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed in the present invention shall still be covered by the claims of the present invention.
Claims
1. A wafer warpage measurement device, characterized in that: include: A wafer carrying assembly, used for carrying a wafer to be tested, wherein the wafer to be tested comprises a first surface and a second surface arranged opposite to each other in a first direction; At least one mechanical sensing element is movably disposed on one side of the wafer to be tested along the first direction so as to come into contact with the first surface or the second surface during movement relative to the wafer to be tested, and a side of the mechanical sensing element close to the wafer to be tested is parallel to the second direction, and the second direction is perpendicular to the first direction.
2. The wafer warpage measuring device according to claim 1, characterized in that: The wafer warpage measuring device comprises two mechanical sensing elements, and the two mechanical sensing elements are arranged on two opposite sides of the wafer to be measured in the first direction.
3. The wafer warpage measurement device according to claim 1 or 2, characterized in that: The first direction includes a vertical direction or a horizontal direction.
4. The wafer warpage measuring device according to claim 1 or 2, characterized in that: The mechanical sensing element includes at least one of a gravity sensor and an elastic force sensor.
5. The wafer warpage measuring device according to claim 1 or 2, characterized in that: The wafer carrying assembly includes a plurality of separately arranged carrying racks, each of which has a carrying plane for carrying the wafer to be tested, and the carrying plane is parallel to the second direction.
6. The wafer warpage measurement device according to claim 5, characterized in that: The wafer warpage measuring device further comprises a supporting platform having a supporting surface, the wafer bearing assembly is fixed on the supporting surface, and the supporting surface is parallel to the second direction.
7. The wafer warpage measurement device according to claim 6, characterized in that: The wafer warpage measuring device also includes a supporting component, which is telescopically adjustable in the first direction. The mechanical sensing element is connected above the supporting component to move between an initial position and a target position along with the telescopic adjustment of the supporting component.
8. The wafer warpage measurement device according to claim 7, characterized in that: When the mechanical sensing element is at the initial position, the distance between a surface of the mechanical sensing element close to the wafer to be tested and the carrying plane is a fixed value.
9. The wafer warpage measuring device according to claim 1 or 2, characterized in that: The wafer warpage measuring device further includes a position detection element, and the position detection element is located on one side of the mechanical sensing element to detect the position of the mechanical sensing element.
10. The wafer warpage measuring device according to claim 1 or 2, characterized in that: The center of the mechanical sensing element coincides with the projection of the center of the wafer to be measured in the first direction.