18-40GHz broadband high-gain low-noise amplifier module

Abstract

The utility model discloses a 18-40GHz broadband high gain low noise amplifier module, which is characterized in that a low noise amplifier comprises a shell, a pre-stage amplifier, a post-stage amplifier, a fixed attenuator and a radio frequency connector, the pre-stage amplifier amplifies the input signal power to at least 7dBm, the frequency range is 18-40GHz, the input is connected with the output of a signal source radio frequency signal, the post-stage amplifier is connected with the fixed attenuator, and the radio frequency connector is connected with the fixed attenuator. The output is connected with the input of the fixed attenuator A; the post-amplifier amplifies the power of the input signal to at least 15dBm, the frequency range is 18-40GHz, the input of the post-amplifier is connected to the output of the fixed attenuator A, and the output of the post-amplifier is connected to the input of a signal source radio frequency signal; the noise coefficient of the low-noise amplifier is 2.2 dB, the gain of the low-noise amplifier is 14 dB, and the pre-amplifier, the post-amplifier and the fixed attenuator are electrically connected and all arranged in the shell. The low-noise amplifier solves the problem of low working efficiency of the low-noise amplifier.

Description

Technical Field

[0001] The utility model relates to the technical field of amplifiers, in particular to an 18-40 GHz broadband high-gain low-noise amplifier module. Background Art

[0002] Low noise amplifier, an amplifier with a very low noise figure. It is generally used as a high-frequency or intermediate-frequency preamplifier for various radio receivers, and an amplifier circuit for highly sensitive electronic detection equipment. When amplifying weak signals, the noise of the amplifier itself may interfere seriously with the signal, so it is hoped to reduce this noise to improve the output signal-to-noise ratio. The degree of signal-to-noise ratio degradation caused by the amplifier is usually expressed by the noise factor F. The noise factor F of an ideal amplifier is F = 1 (0 dB), and its physical meaning is that the input signal-to-noise ratio is equal to the output signal-to-noise ratio; a low noise amplifier (LNA) is a type of amplifier circuit. The low noise amplifier amplifies the radio frequency signal received from the antenna to improve the signal-to-noise ratio of the overall link. With the development of wireless communications, low noise amplifiers have been widely used. At this stage, people have put forward requirements for miniaturization and modularization for the receiving part of radars and base stations.

[0003] In the existing technology, 18-40GHz low-noise amplifier modules are widely used in the construction of indoor radar simulation and moving target test systems. In the past, they relied on imported devices, which were expensive, and the noise coefficient, standing wave and gain flatness indicators were not ideal. With the development of domestic semiconductor devices, this type of device has gradually been localized, but the performance indicators have not improved much in the short term.

[0004] Therefore, it is necessary to provide a 18-40GHz broadband high-gain low-noise amplifier module to solve the above technical problems. The utility model is a low-noise, high-gain gallium arsenide amplifier chip jointly developed with domestic chip research and development institutions, and integrated design. Summary of the invention

[0005] The purpose of this section is to summarize some aspects of the embodiments of the present invention and briefly introduce some preferred embodiments. Some simplifications or omissions may be made in this section and the abstract of the specification and the title of the invention of this application to avoid blurring the purpose of this section, the abstract of the specification and the title of the invention, and such simplifications or omissions cannot be used to limit the scope of the present invention.

[0006] Therefore, the utility model aims to solve the problem that the working efficiency of the low noise amplifier is low.

[0007] In order to solve the above technical problems, the utility model provides the following technical solutions: a 18-40GHz broadband high-gain low-noise amplifier module, characterized in that: the low-noise amplifier includes a shell, a pre-amplifier, a post-amplifier, a fixed attenuator and a radio frequency connector, the pre-amplifier amplifies the input signal power to at least 7dBm, the frequency range is 18-40GHz, the input is connected to the output of the signal source radio frequency signal, and the output is connected to the input of the fixed attenuator A; the post-amplifier amplifies the input signal power to at least 15dBm, the frequency range is 18-40GHz, the input is connected to the output of the fixed attenuator A, and the output is connected to the input of the signal source radio frequency signal; the low-noise amplifier has a noise figure of 2.2dB and a gain of 14dB, and the pre-amplifier, the post-amplifier and the fixed attenuator are electrically connected and arranged inside the shell.

[0008] As a preferred solution of the 18-40 GHz broadband high-gain low-noise amplifier module of the utility model, there are two RF connectors, which are respectively arranged and installed at two ends of the shell.

[0009] As a preferred solution of the 18-40 GHz broadband high-gain low-noise amplifier module of the utility model, the power amplifier chips selected for the pre-amplifier and the post-amplifier are both made of GaAs material.

[0010] As a preferred solution of the 18-40 GHz broadband high-gain low-noise amplifier module of the utility model, the chip is a gallium arsenide chip, which adopts a bare chip voltage regulator chip design.

[0011] Beneficial effects of the utility model: The low-noise amplifier of the utility model covers multiple bands K (18-26.5GHz) and Ka (26.5-40GHz) in wireless communication systems, with a bandwidth of 18 to 40GHz; it adopts a two-stage amplification circuit cascade, has extremely low noise coefficient, excellent standing wave characteristics, strong versatility, low cost, good linearity and good gain flatness, and has the characteristics of promotion value. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the following briefly introduces the drawings required for the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor. Among them:

[0013] Figure 1 It is a low noise amplifier structure diagram of an 18-40 GHz broadband high gain low noise amplifier module according to an embodiment of the utility model;

[0014] Figure 2 This is an amplifier gain distribution diagram of an 18-40 GHz broadband high-gain low-noise amplifier module according to an embodiment of the utility model;

[0015] Figure 3 It is a schematic diagram of a T-type head matching microstrip of an 18-40 GHz broadband high-gain low-noise amplifier module according to an embodiment of the utility model;

[0016] Figure 4 It is a T-type head matching microstrip simulation curve of an 18-40GHz broadband high-gain low-noise amplifier module according to an embodiment provided by the utility model;

[0017] Figure 5 This is a low noise amplifier input standing wave test curve of an 18-40 GHz broadband high gain low noise amplifier module according to an embodiment of the utility model;

[0018] Figure 6 This is a low noise amplifier output standing wave test curve of an 18-40 GHz broadband high gain low noise amplifier module according to an embodiment of the utility model;

[0019] Figure 7 The utility model provides an embodiment of the low noise amplifier insertion loss test curve of the 18-40 GHz broadband high gain low noise amplifier module. DETAILED DESCRIPTION

[0020] In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below in conjunction with the accompanying drawings.

[0021] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0022] Secondly, the present invention is described in detail with reference to the schematic diagram. When describing the embodiments of the present invention, for the sake of convenience, the cross-sectional diagrams showing the device structure will not be partially enlarged according to the general proportion, and the schematic diagrams are only examples, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0023] Secondly, the term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure or characteristic that may be included in at least one implementation of the present invention. The term "in one embodiment" that appears in different places in this specification does not necessarily refer to the same embodiment, nor does it refer to a separate or selective embodiment that is mutually exclusive with other embodiments.

[0024] Example 1

[0025] Reference Figure 1-7 , the first embodiment of the utility model, a 18-40GHz broadband high-gain low-noise amplifier module, characterized in that: the low-noise amplifier includes a housing 101, a pre-amplifier, a post-amplifier, a fixed attenuator and a radio frequency connector 102, the pre-amplifier amplifies the input signal power to at least 7dBm, the frequency range is 18-40GHz, the input is connected to the output of the signal source radio frequency signal, and the output is connected to the input of the fixed attenuator A; the post-amplifier amplifies the input signal power to at least 15dBm, the frequency range is 18-40GHz, the input is connected to the output of the fixed attenuator A, and the output is connected to the input of the signal source radio frequency signal; the low-noise amplifier has a noise figure of 2.2dB and a gain of 14dB, and the pre-amplifier, the post-amplifier and the fixed attenuator are all electrically connected and arranged inside the housing. The interior of the low-noise amplifier is arranged as a cavity that can accommodate the device, and the lower surface of the low-noise amplifier is provided with a shell cover, which is connected to the housing by screws; a pair of radio frequency connectors are provided on the housing, which are respectively installed on both sides of the housing by screws. The dimensions of the low noise amplifier are: 29*22.5*14mm, such as Figure 1 As shown;

[0026] Amplifier chain power and gain distribution as Figure 2 As shown:

[0027] The preamplifier is the first stage amplifier P1, which is used to amplify the input signal power to at least 7dBm. The selected power amplifier chip is made of GaAs material with a frequency range of 18 to 40GHz. The input is connected to the output of the signal source RF signal, and the output is connected to the input of the fixed attenuator A;

[0028] The post-amplifier, i.e. the second-stage amplifier P2, is used to amplify the input signal power to at least 15dBm. The selected power amplifier chip is made of GaAs material with a frequency range of 18 to 40GHz. The input is connected to the output of the fixed attenuator A, and the output is connected to the input of the signal source RF signal;

[0029] (1) Considering the noise coefficient of the amplifier module, the first-stage amplifier P1 selects a chip with low noise coefficient and high gain. The low-noise amplifier selected this time has a noise coefficient of 2.2dB and a gain of 14dB.

[0030] (2) The main chips of the low-noise amplifier are all made of gallium arsenide chips, which have been engineered and verified for reliability. The bare chip voltage regulator chip design can be placed nearby to reduce the voltage transmission drop, reduce the voltage ripple, and have a compact space, which is conducive to miniaturization.

[0031] (3) The printed circuit board should be a board with low dielectric loss and good heat dissipation characteristics. Based on experience, Rogers 5880 board with a thickness of 0.19 mm is selected as the substrate of the watt-class amplifier in the frequency range of DC to 40 GHz to meet the frequency band used.

[0032] (4) Considering the impedance matching between the connector and the microstrip, and between the microstrip and the chip, simulation tests are carried out. The T-type impedance matching microstrip design can ensure good input and output standing wave characteristics, and can also optimize the chip cascade matching. The model and performance curves are shown in Figure 2. Figure 3 , 4 shown.

[0033] The measured data of the low noise amplifier is as follows Figure 4 , 5 As shown in Figure 6, within the bandwidth of 18 to 40 GHz, the actual test insertion loss of the low noise amplifier is greater than 23 dB, and the input and output standing waves are both less than 1.8, and the test performance is good.

[0034] In summary, the working efficiency of the low noise amplifier is greatly improved by using gallium arsenide chips and T-head impedance matching microstrip for the low noise amplifier.

[0035] Importantly, it should be noted that the construction and arrangement of the present application shown in a plurality of different exemplary embodiments are only exemplary. Although only a few embodiments are described in detail in this disclosure, it should be readily understood by those who refer to this disclosure that many modifications are possible (e.g., the size, scale, structure, shape and ratio of various elements, and parameter values ​​(e.g., temperature, pressure, etc.), installation arrangements, use of materials, color, directional changes, etc.) without substantially departing from the novel teachings and advantages of the subject matter described in the application. For example, the element shown as integrally formed can be composed of multiple parts or elements, the position of the element can be inverted or otherwise changed, and the nature or number or position of the discrete element can be changed or changed. Therefore, all such modifications are intended to be included in the scope of the present utility model. The order or sequence of any process or method steps can be changed or reordered according to alternative embodiments. In the claims, any "device plus function" clause is intended to cover the structure of performing the function described herein, and is not only structurally equivalent but also equivalent structure. Without departing from the scope of the present invention, other substitutions, modifications, changes and omissions may be made in the design, operating conditions and arrangement of the exemplary embodiments. Therefore, the present invention is not limited to a specific embodiment, but extends to various modifications that still fall within the scope of the appended claims.

[0036] Additionally, in order to provide a concise description of example embodiments, all features of an actual embodiment (ie, those features that are not relevant to the best mode presently contemplated for carrying out the invention or those that are not relevant to implementing the invention) may not be described.

[0037] It will be appreciated that in the development of any actual implementation, as in any engineering or design project, numerous implementation-specific decisions may be made. Such a development effort may be complex and time-consuming, but will be a routine task of design, fabrication, and production for those of ordinary skill having the benefit of this disclosure without undue experimentation.

[0038] It should be noted that the above embodiments are only used to illustrate the technical solution of the utility model rather than to limit it. Although the utility model has been described in detail with reference to the preferred embodiments, ordinary technicians in the field should understand that the technical solution of the utility model can be modified or replaced by equivalents without departing from the spirit and scope of the technical solution of the utility model, which should be included in the scope of the claims of the utility model.

Claims

1. A 18-40 GHz broadband high-gain low-noise amplifier module, characterized in that The low noise amplifier comprises a housing (101), a pre-amplifier, a post-amplifier, a fixed attenuator and a radio frequency connector (102), wherein the pre-amplifier amplifies the input signal power to at least 7 dBm, the frequency range is 18 to 40 GHz, the input is connected to the output of the radio frequency signal of the signal source, and the output is connected to the input of the fixed attenuator A; the post-amplifier amplifies the input signal power to at least 15 dBm, the frequency range is 18 to 40 GHz, the input is connected to the output of the fixed attenuator A, and the output is connected to the input of the radio frequency signal of the signal source; The low noise amplifier has a noise figure of 2.2 dB and a gain of 14 dB. The pre-amplifier, the post-amplifier and the fixed attenuator are electrically connected and arranged inside the housing (101).

2. The 18-40 GHz broadband high-gain low-noise amplifier module according to claim 1, characterized in that: There are two radio frequency connectors (102), which are respectively installed at two ends of the housing (101).

3. The 18-40 GHz broadband high-gain low-noise amplifier module according to claim 2, characterized in that: The power amplifier chips selected for the pre-stage amplifier and the post-stage amplifier are both made of GaAs material.

4. The 18-40 GHz broadband high-gain low-noise amplifier module according to claim 3, characterized in that: The chip is a gallium arsenide chip, which adopts a bare chip voltage regulator chip design.

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