Silicon rod assembly, composite heater and single crystal furnace

Abstract

The utility model discloses a silicon rod assembly, composite heater and single crystal furnace, the silicon rod assembly comprises a first silicon square rod and a second silicon square rod, the outer contour of the first silicon square rod has two first long sides and two first short sides, the two first short sides are respectively connected between the two ends of the two first long sides, and the second short sides are respectively connected between the two ends of the two first long sides. The first short edge is perpendicular to the first long edge; the outer contour of the second silicon square rod is provided with two second long edges and two second short edges, the two second short edges are connected between the two ends of the two second long edges respectively, the second short edges are perpendicular to the second long edges, and the length of the second long edges is equal to that of the first short edges. According to the silicon rod assembly provided by the utility model, the material utilization rate of the silicon rod assembly is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon wafer processing, in particular to a silicon rod component, a composite heater and a single crystal furnace. Background Art

[0002] In the prior art, when cutting silicon rods, a square silicon rod with a square cross-section is generally cut, and then the four edge materials are processed to form a small-sized silicon rod. However, the utilization rate of the silicon rod material in the related art is low. Utility Model Content

[0003] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, one purpose of the utility model is to provide a silicon rod assembly to improve the material utilization rate of the silicon rod assembly.

[0004] Another object of the present invention is to provide a composite heater for processing the above silicon rod assembly.

[0005] Another object of the present invention is to provide a single crystal furnace using the composite heater.

[0006] According to the first aspect of the present invention, the silicon rod assembly includes: a first silicon square rod, the outer contour of the first silicon square rod has two first long sides and two first short sides, the two first short sides are respectively connected between the two ends of the first long sides, and the first short sides are perpendicular to the first long sides; a second silicon square rod, the outer contour of the second silicon square rod has two second long sides and two second short sides, the two second short sides are respectively connected between the two ends of the second long sides, the second short sides are perpendicular to the second long sides, and the length of the second long side is equal to the length of the first short side.

[0007] According to the silicon rod assembly of the embodiment of the utility model, a plurality of second silicon square rods can be stacked and bonded to obtain a silicon rod assembly with the same length as the first short side of the first silicon square rod, and the second silicon square rods of the same specification can be directly bonded without splicing smaller silicon square rods or cutting larger silicon square rods, and then can be cut according to the required size of the silicon wafer, thereby improving the utilization rate of the silicon rod and reducing the generation of edge materials. In addition, the processed second silicon square rods can be directly connected, reducing the process of silicon rod assembly processing and improving the efficiency of silicon rod assembly processing.

[0008] According to some embodiments of the present invention, the first silicon square rod includes a first sub-square rod and two second sub-square rods, the length of the side length of the outer contour of the first sub-square rod is equal to the length of the first short side, the outer contour of the second sub-square rod has two first sub-long sides and two first sub-short sides, the two first sub-short sides are respectively connected between the two ends of the first sub-long sides, the length of the first sub-long side is equal to the length of the first short side, and the sum of the lengths of the two first sub-short sides and the side length of the outer contour of the first sub-square rod is equal to the length of the first long side.

[0009] According to some embodiments of the present invention, the length of the second short side is equal to the length of the first sub-short side.

[0010] According to some embodiments of the present invention, there are multiple second silicon square rods, and the multiple second silicon square rods and the second sub-square rods are arranged along the extension direction of the second short side.

[0011] According to some embodiments of the present utility model, the silicon rod assembly further includes: a third silicon square rod, the outer contour of the third silicon square rod having two third long sides and two third short sides, the two third short sides are respectively connected between the two ends of the two third long sides, the third short side is perpendicular to the third long side, and the length of the third long side is less than the length of the first short side.

[0012] According to some embodiments of the present invention, the length of the first short side is twice the length of the third long side.

[0013] According to some embodiments of the present invention, there are multiple third silicon square rods, and the multiple third silicon optical rods are arranged along the extension direction of the third short side.

[0014] According to the composite heater of the second aspect embodiment of the utility model, the composite heater is used for processing the silicon rod assembly described in the first aspect embodiment.

[0015] According to some embodiments of the utility model, the present invention includes: a first heater, on which at least one avoidance groove is formed; a second heater, the second heater and the first heater are arranged at intervals along the height direction of the first heater, and the second heater is provided with at least one mounting structure, and at least a portion of the mounting structure extends into the avoidance groove.

[0016] According to some embodiments of the present invention, one end of the mounting structure is connected to the second heater, and the other end of the mounting structure first extends to the avoidance groove along the height direction of the first heater and then extends to the outside of the avoidance groove along the thickness direction of the first heater.

[0017] According to some embodiments of the present invention, the one end of the mounting structure is connected to a side of the second heater facing the first heater.

[0018] According to some embodiments of the present invention, the outer side surface of the mounting structure and the outer peripheral surface of the first heater are on the same curved surface.

[0019] The single crystal furnace according to the third aspect of the present invention comprises the composite heater according to the second aspect.

[0020] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0022] Figure 1 is a schematic diagram of a silicon rod according to an embodiment of the utility model;

[0023] Figure 2 is a schematic diagram of cutting a silicon rod according to an embodiment of the utility model;

[0024] Figure 3 is a schematic diagram of cutting the second edge leather material according to an embodiment of the utility model;

[0025] Figure 4 is a schematic diagram of cutting the first edge leather material according to an embodiment of the utility model;

[0026] Figure 5 is a schematic diagram of the splicing of a silicon rod assembly according to an embodiment of the utility model;

[0027] Figure 6 is a schematic diagram of a composite heater according to an embodiment of the utility model;

[0028] Figure 7 is a schematic diagram of a composite heater from another angle according to an embodiment of the utility model;

[0029] Figure 8 is a schematic diagram of a single crystal furnace according to an embodiment of the utility model;

[0030] Fig. 9 yes Figure 8 An enlarged view of the circled section A.

[0031] Reference numerals:

[0032] 100. Silicon rod assembly; 200. Composite heater; 300. Single crystal furnace;

[0033] 10. Silicon rod; 1. First silicon square rod; 11. First long side; 12. First short side;

[0034] 13. The first sub-square stick; 14. The second sub-square stick;

[0035] 141, first sub-long side; 142, first sub-short side;

[0036] 2. Second silicon square rod; 21. Second long side; 22. Second short side;

[0037] 3. The third silicon square rod; 31. The third longest side; 32. The third short side;

[0038] 4. The first side leather material; 5. The second side leather material; 6. The third side leather material;

[0039] 201, first heater; 2011, avoidance groove;

[0040] 202. A second heater; 2021. A mounting structure;

[0041] 301, main body; 302, outer guide tube; 303, inner guide tube;

[0042] 3031. First inner guide tube; 3032. Second inner guide tube; 304. Water-cooled heat shield. DETAILED DESCRIPTION

[0043] The embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. Figure 1-Figure 5 The silicon rod assembly 100 according to the first embodiment of the present invention is described.

[0044] like Figure 1 and Figure 2 As shown, the silicon rod assembly 100 according to the first embodiment of the utility model includes a first silicon square rod 1 and a second silicon square rod 2.

[0045] Specifically, the outer contour of the first silicon square rod 1 has two first long sides 11 and two first short sides 12, the two first short sides 12 are respectively connected between the two ends of the two first long sides 11, and the first short sides 12 are perpendicular to the first long sides 11. The outer contour of the second silicon square rod 2 has two second long sides 21 and two second short sides 22, the two second short sides 22 are respectively connected between the two ends of the two second long sides 21, the second short sides 22 are perpendicular to the second long sides 21, and the length of the second long side 21 is equal to the length of the first short side 12.

[0046] For example, in Figure 1 and Figure 2 In the example, the first silicon square rod 1 and the second silicon square rod 2 are both rectangular silicon rods 10, the outer contour of the first silicon square rod 1 can be understood as the cross-sectional contour of the first silicon square rod 1, and the outer contour of the second silicon square rod 2 can be understood as the cross-sectional contour of the second silicon square rod 2. The two first long sides 11 and the two first short sides 12 are configured as a rectangular cross section, and the two second short sides 22 and the two second long sides 21 are also configured as a rectangular cross section. The silicon rod 10 is cylindrical in shape and has a circular cross section.

[0047] In the embodiment of the present application, the silicon rod 10 is cut to form a first silicon square rod 1 and a second silicon square rod 2. A plurality of second silicon square rods 2 can be bonded to form a silicon rod assembly 100. The first silicon square rod 1 can also be further cut to form a first sub-square rod 13 with a square cross-section and a second sub-square rod 14 with a rectangular cross-section. In the description of the present utility model, "plurality" means two or more. When the silicon rod 10 is cut, the first silicon square rod 1 can be cut out first, and the cutting line is roughly distributed in a "well" shape. The obtained edge material is cut to cut out the second silicon square rod 2. Two silicon square rods can be obtained from one silicon rod 10, and the length of the second long side 21 of the second silicon square rod 2 is the same as the length of the first short side 12 of the first silicon square rod 1. Thus, a plurality of second silicon square bars 2 can be stacked and bonded to obtain a silicon bar assembly 100 having the same length as the first short side 12 of the first silicon square bar 1, and second silicon square bars 2 of the same specification can be directly bonded without the need to splice smaller silicon square bars or cut larger silicon square bars, and can then be cut according to the required size of the silicon wafer, thereby improving the utilization rate of the silicon bar 10 and reducing the generation of edge material. In addition, the processed second silicon square bars 2 can be directly connected, reducing the processing steps of the silicon bar assembly 100 and improving the processing efficiency of the silicon bar assembly 100.

[0048] According to the silicon rod assembly 100 of the embodiment of the utility model, a plurality of second silicon square rods 2 can be stacked and bonded to obtain a silicon rod assembly 100 having the same length as the first short side 12 of the first silicon square rod 1, and the second silicon square rods 2 of the same specification can be directly bonded without the need to splice smaller silicon square rods or cut larger silicon square rods, and can then be cut according to the required size of the silicon wafer, thereby improving the utilization rate of the silicon rod 10 and reducing the generation of edge material. In addition, the processed second silicon square rods 2 can be directly connected, reducing the processing steps of the silicon rod assembly 100 and improving the processing efficiency of the silicon rod assembly 100.

[0049] According to some embodiments of the present invention, Figure 2The first silicon square rod 1 includes a first sub-square rod 13 and two second sub-square rods 14. The length of the side length of the outer contour of the first sub-square rod 13 is equal to the length of the first short side 12. The outer contour of the second sub-square rod 14 has two first sub-long sides 141 and two first sub-short sides 142. The two first sub-short sides 142 are respectively connected between the two ends of the two first sub-long sides 141. The length of the first sub-long side 141 is equal to the length of the first short side 12. The sum of the length of the two first sub-short sides 142 and the side length of the outer contour of the first sub-square rod 13 is equal to the length of the first long side 11.

[0050] For example, in Figure 2 In the example of , the cross-sectional shape of the first sub-square rod 13 is a square, and the cross-sectional shape of the second sub-square rod 14 is a rectangle. That is, the first silicon square rod 1 can be further cut to obtain a first sub-square rod 13 with a cross-sectional shape of a square with the first short side 12 as the side length, and the remaining material can be cut in two to obtain two second sub-square rods 14, the shape of the outer contour of each second sub-square rod 14 is the same as the shape of the outer contour of the second silicon square rod 2, and the length of the first sub-long side 141, the length of the first short side 12 and the length of the second long side 21 of the second sub-square rod 14 are the same. In other words, the first sub-square rod 13 obtained by cutting the first silicon square rod 1 can be directly cut to obtain a square silicon wafer, and a plurality of second sub-square rods 14 and a plurality of second silicon square rods 2 can be bonded to form a whole, and the second long side 21 is opposite to the first sub-long side 141 during bonding. Thus, the second sub-square rod 14 and the second silicon square rod 2 can be directly connected, reducing the processing steps of the silicon rod assembly 100 and improving the processing efficiency of the silicon rod assembly 100.

[0051] According to some embodiments of the present invention, Figure 2 and Figure 3 , the length of the second short side 22 is equal to the length of the first sub-short side 142. That is to say, the length of the second long side 21 of the second silicon square rod 2 is the same as the length of the first sub-long side 141 of the second sub-square rod 14, and the length of the second short side 22 of the second silicon square rod 2 is the same as the length of the first sub-short side 142 of the second sub-square rod 14. That is, the second silicon square rod 2 and the second sub-square rod 14 have the same shape and the same cross-sectional area. Therefore, during the splicing process of the second silicon square rod 2 and the second sub-square rod 14, there is no need to sort, which further improves the processing efficiency of the silicon rod assembly 100. In addition, it is also conducive to the direct bonding of the second silicon square rod 2 and the second sub-square rod 14.

[0052] According to some embodiments of the present invention, Figure 5, there are multiple second silicon square rods 2, and the multiple second silicon square rods 2 and the second sub-square rods 14 are arranged along the extension direction of the second short side 22. For example, in the example of FIG. 5 , each silicon rod 10 can be cut to obtain two second silicon square rods 2, and the multiple second silicon square rods 2 of the multiple silicon rods 10 can be stacked and connected along the thickness direction of the second silicon square rods 2 (that is, the extension direction of the second short side 22) to obtain silicon rod assemblies 100 of different sizes, so as to facilitate the production of silicon wafers.

[0053] According to some embodiments of the present invention, referring to Figure 2 and Figure 4 The silicon rod assembly 100 further includes a third silicon square rod 3. The outer contour of the third silicon square rod 3 has two third long sides 31 and two third short sides 32. The two third short sides 32 are respectively connected between the two ends of the two third long sides 31. The third short side 32 is perpendicular to the third long side 31, and the length of the third long side 31 is less than the length of the first short side 12.

[0054] For example, in Figure 2 and Figure 4 In the example, the outer contour shape (i.e., the cross-sectional shape) of the third silicon square rod 3 is a rectangle, and the two third short sides 32 and the two third long sides 31 are connected to form the outer contour of the third silicon square rod 3. When the silicon rod 10 is cut to obtain the first silicon square rod 1, two first edge skin materials 4 and two second edge skin materials 5 are obtained. The two second edge skin materials 5 can be cut to obtain two second silicon square rods 2. The third edge skin material 6 is obtained in the process of cutting the second silicon square rod 2. The size of the cross-sectional shape of the third edge skin material 6 is the same as the size of the cross-sectional shape of the first edge skin material 4. That is, in the process of cutting each silicon rod 10 to obtain the first silicon square rod 1 and the second silicon square rod 2, two first edge skin materials 4 and two third edge skin materials 6 are obtained. Taking the first edge skin material 4 as an example, a third silicon square rod 3 can be obtained by cutting the first edge skin material 4, and multiple third silicon square rods 3 can be directly bonded to obtain silicon rod assemblies 100 of different sizes. Thus, the first edge material 4 and the third edge material 6 obtained by cutting can be fully utilized, further improving the utilization rate of the silicon rod 10 and reducing the generation of edge materials. In addition, the processed third silicon square rod 3 can be directly connected, reducing the processing steps of the silicon rod assembly 100 and improving the processing efficiency of the silicon rod assembly 100.

[0055] According to some embodiments of the present invention, the length of the first short side 12 is twice the length of the third long side 31. Figure 2 and Figure 4, the length of the straight side of the first edge skin material 4 is the length of the first short side 12, and the length of the third long side 31 of the third silicon square rod 3 obtained by cutting is less than the length of the first short side 12. When the length of the third long side 31 is cut to be half of the length of the first short side 12, two third silicon square rods 3 are arranged along the extension direction of the third long side 31 to obtain a silicon rod assembly 100 with the same side length as the first sub-square rod 13, and multiple third silicon square rods 3 are further bonded to obtain silicon rod assemblies 100 of different sizes, and the length of one side of the outer contour of the silicon rod assembly 100 is the same as the side length of the first sub-square rod 13. Therefore, it is conducive to the direct bonding and utilization of the third silicon square rod 3, and further improves the processing efficiency of the silicon rod assembly 100.

[0056] According to some embodiments of the present invention, there are multiple third silicon square rods 3, and the multiple third silicon optical rods are arranged along the extension direction of the third short side 32. Figure 2 In the example, each silicon rod 10 can be cut to obtain a first sub-square rod 13, two second silicon square rods 2, two second sub-square rods 14, and four third silicon square rods 3. The multiple third silicon square rods 3 have the same size and can be arranged and bonded along the thickness direction of the third silicon square rods 3 to obtain silicon rod assemblies 100 of different sizes, so as to cut silicon wafers of target size.

[0057] For example, the cross-sectional diameter of the silicon rod 10 is 330 mm. First, the first silicon square rod 1 is cut to obtain a first long side 11 of 254.56 mm and a first short side 12 of 210 mm. Continuing to cut on the first silicon square rod 1, a first sub-square rod 13 with a side length of 210 mm and two identical second sub-square rods 14 are obtained. The first sub-long side 141 of the second sub-square rod 14 is 210 mm and the first sub-short side 142 is 22.28 mm. Cut on the second side skin material 5 (cutting line as shown in FIG. 1 ). Figure 3 The second silicon square rod 2 with a second long side 21 of 210 mm and a second short side 22 of 22.28 mm is obtained by cutting the first edge material 4 and the third edge material 6 (the cutting line is as shown in FIG. Figure 4 The third sub-square rod can be obtained by cutting the third long side 31 of 105mm and the third short side 32 of 29.27mm. At present, a 12-inch single crystal silicon rod can only be squared into a 210mm square rod, and the conversion rate of circle to square is about 62.42%. The utilization area of ​​the silicon wafer is small, and about 37.58% of the edge skin will be used as recycled material to continue pulling single crystals. The high proportion of recycled material will cause problems such as difficulty in crystallization and high oxygen content, which is not conducive to crystal pulling. In the present application, the effective utilization area of ​​the silicon rod 10 after cutting is 86.96%, which can maximize the utilization area of ​​the silicon rod 10, improve the efficiency and output of the silicon rod assembly 100, and reduce production costs.

[0058] According to the composite heater 200 of the second aspect of the utility model, Figure 6-Figure 8 The composite heater 200 is used to process the silicon rod assembly 100 of the first embodiment described above.

[0059] According to the composite heater 200 of the embodiment of the utility model, the composite heater 200 is used to process the silicon rod 10, and the silicon rod 10 is cut to obtain the silicon rod assembly 100 of the first embodiment, thereby improving the working efficiency and performance of the composite heater 200.

[0060] According to some embodiments of the present invention, Figure 6-Figure 8 , including a first heater 201 and a second heater 202, at least one avoidance groove 2011 is formed on the first heater 201, the second heater 202 and the first heater 201 are arranged at intervals along the height direction of the first heater 201, and at least one mounting structure 2021 is provided on the second heater 202, and at least a portion of the mounting structure 2021 extends into the avoidance groove 2011.

[0061] For example, in Figure 6-Figure 8 In the example, the first heater 201 and the second heater 202 are respectively annular heaters, the second heater 202 is located above the first heater 201, and the heating powers of the first heater 201 and the second heater 202 are different. Two avoidance grooves 2011 are formed on the first heater 201, and the two avoidance grooves 2011 are arranged at intervals along the circumference of the first heater 201. The avoidance grooves 2011 extend in the up-down direction, and the avoidance grooves 2011 pass through the side surfaces of the first heater 201 along the thickness direction (i.e., radial direction) of the first heater 201. Two mounting structures 2021 are also provided, and the two mounting structures 2021 are respectively matched with the two avoidance grooves 2011.

[0062] In this way, the space on the first heater 201 can be effectively utilized, so that the avoidance groove 2011 can be used to accommodate the mounting structure 2021, and the radial size of the composite heater 200 is reduced, so that it is more conducive to the use and installation of the composite heater 200. In addition, by setting the first heater 201 and the second heater 202, for example, the overall height of the composite heater 200 remains unchanged, and the height of the heating zone is changed from the original 320mm to a heating zone of 200mm (for example, the height of the heating zone of the second heater 202) and a heating zone of 220mm (for example, the height of the heating zone of the first heater 201), which reduces the longitudinal temperature gradient of the melt, reduces the thermal convection of the melt, thereby inhibiting the transport of oxygen from the field wall to the melt and reducing the oxygen content in the crystal. Therefore, in this design, a more efficient composite heater 200 is used to reduce the oxygen content in the crystalline silicon rod 10, improve the uniformity of the thermal field and the temperature stability, thereby providing the stability and uniformity of the obtained silicon rod 10.

[0063] According to some embodiments of the present invention, Figure 6 and Figure 7 , one end of the mounting structure 2021 is connected to the second heater 202, and the other end of the mounting structure 2021 first extends to the avoidance groove 2011 along the height direction of the first heater 201, and then extends to the outside of the avoidance groove 2011 along the thickness direction of the first heater 201. For example, the mounting structure 2021 is roughly L-shaped, the long side of the mounting structure 2021 is located in the avoidance groove 2011, and the short side of the mounting structure 2021 extends to the outside of the avoidance groove 2011 and is connected to the main body 301 of the single crystal furnace 300, so as to facilitate the installation and fixation of the second heater 202. In addition, the mounting structure 2021 has a simple structure, is easy to produce, and has low assembly difficulty.

[0064] According to some embodiments of the present invention, referring to Figure 6 and Figure 7 , one end of the mounting structure 2021 is connected to the side of the second heater 202 facing the first heater 201. That is, the upper end of the mounting structure 2021 is connected to the bottom surface of the second heater 202. This arrangement reduces the space occupied by the mounting structure 2021 on the outer peripheral surface of the second heater 202, reduces the radial size of the second heater 202, reduces the radial size of the composite heater 200, and is more conducive to the installation and use of the composite heater 200.

[0065] According to some embodiments of the present invention, Figure 6 and Figure 7 , the outer side surface of the mounting structure 2021 and the outer peripheral surface of the first heater 201 are on the same curved surface. Figure 6 and Figure 7 In the example, the central axis of the first heater 201 coincides with the central axis of the second heater 202, and the outer peripheral surface of the first heater 201, the outer peripheral surface of the second heater 202 and the outer side surface of the mounting structure 2021 are all on the same curved surface. With such an arrangement, the layout of the first heater 201, the second heater 202 and the mounting structure 2021 is reasonable and compact, and the mounting structure 2021 is prevented from protruding from the outer peripheral surface or inner wall surface of the first heater 201, so as to be more conducive to the installation and use of the composite heater 200.

[0066] According to the single crystal furnace 300 of the third aspect of the utility model, combined with Figure 8 , comprising the composite heater 200 according to the second aspect embodiment

[0067] According to the single crystal furnace 300 of the embodiment of the utility model, by adopting the above-mentioned composite heater 200, the processed silicon rods 10 have higher uniformity and stability, which is more conducive to the use of the silicon rods 10 and also improves the performance of the single crystal furnace 300.

[0068] Optionally, combined Figure 8 The single crystal furnace 300 includes a main body 301, an outer flow guide tube 302, an inner flow guide tube 303 and a water-cooled heat shield 304. The outer flow guide tube 302, the inner flow guide tube 303, the water-cooled heat shield 304 and the composite heater 200 are all arranged in the main body 301. The outer flow guide tube 302, the inner flow guide tube 303 and the water-cooled heat shield 304 are sequentially arranged radially inward from the main body 301. The inner flow guide tube 303 includes a first inner flow guide tube 3031 and a second inner flow guide tube 3032. The first inner flow guide tube 3031 is located above the second inner flow guide tube 3032. The central axis of the first opening of the outer flow guide tube 302, the central axis of the second opening of the first inner flow guide tube 3031, the central axis of the third opening of the second inner flow guide tube 3032 and the central axis of the fourth opening of the water-cooled heat shield 304 all coincide. The current 36-inch thermal field can only pull 12-inch single crystal silicon rods due to limited space. Combined with Fig. 9 When the cross-sectional diameter of the silicon rod 10 is 330 mm, the diameter (d 4 ) is expanded from 365 mm to 395 mm, and the second opening (d 2 ) is enlarged from 468 mm to 498 mm, and the third opening (d 3 ) is enlarged from 366 mm to 396 mm, and the diameter of the first opening of the outer guide tube 302 (d 1 ) is expanded from 360mm to 390mm to facilitate the smooth processing of the silicon rod 10.

[0069] Other structures of the silicon rod assembly 100, the composite heater 200 and the single crystal furnace 300 according to the embodiment of the present invention, such as ... and ..., etc., and operations are known to those skilled in the art and will not be described in detail here.

[0070] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0071] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example.

[0072] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A silicon rod assembly, characterized in that: include: A first silicon square rod, wherein the outer contour of the first silicon square rod has two first long sides and two first short sides, the two first short sides are respectively connected between two ends of the two first long sides, and the first short sides are perpendicular to the first long sides; A second silicon square rod, wherein the outer contour of the second silicon square rod has two second long sides and two second short sides, the two second short sides are respectively connected between the two ends of the two second long sides, the second short side is perpendicular to the second long side, and the length of the second long side is equal to the length of the first short side.

2. The silicon rod assembly according to claim 1, characterized in that: The first silicon square rod includes a first sub-square rod and two second sub-square rods, the length of the side length of the outer contour of the first sub-square rod is equal to the length of the first short side, the outer contour of the second sub-square rod has two first sub-long sides and two first sub-short sides, the two first sub-short sides are respectively connected between the two ends of the first sub-long sides, the length of the first sub-long side is equal to the length of the first short side, and the sum of the lengths of the two first sub-short sides and the side length of the outer contour of the first sub-square rod is equal to the length of the first long side.

3. The silicon rod assembly according to claim 2, characterized in that: The length of the second short side is equal to the length of the first sub-short side.

4. The silicon rod assembly according to claim 2, characterized in that: There are a plurality of the second silicon square rods, and the plurality of the second silicon square rods and the second sub-square rods are arranged along an extending direction of the second short side.

5. The silicon rod assembly according to any one of claims 1 to 4, characterized in that: Further including: A third silicon square rod, wherein the outer contour of the third silicon square rod has two third long sides and two third short sides, the two third short sides are respectively connected between the two ends of the two third long sides, the third short side is perpendicular to the third long side, and the length of the third long side is less than the length of the first short side.

6. The silicon rod assembly according to claim 5, characterized in that: The length of the first short side is twice the length of the third long side.

7. The silicon rod assembly according to claim 5, characterized in that: There are a plurality of third silicon square rods, and the plurality of third silicon square rods are arranged along the extending direction of the third short side.

8. A composite heater, characterized in that: The composite heater is used for processing the silicon rod assembly according to any one of claims 1-7.

9. The composite heater according to claim 8, characterized in that: include: a first heater, wherein at least one avoidance groove is formed on the first heater; The second heater is arranged with the first heater at intervals along the height direction of the first heater, and the second heater is provided with at least one mounting structure, and at least a part of the mounting structure extends into the avoidance groove.

10. The composite heater according to claim 9, characterized in that: One end of the mounting structure is connected to the second heater, and the other end of the mounting structure first extends to the avoidance groove along the height direction of the first heater and then extends to the outside of the avoidance groove along the thickness direction of the first heater.

11. The composite heater according to claim 9, characterized in that: The one end of the mounting structure is connected to a side surface of the second heater facing the first heater.

12. The composite heater according to claim 9, characterized in that: The outer side surface of the mounting structure and the outer peripheral surface of the first heater are on the same curved surface.

13. A single crystal furnace, characterized in that: Comprising a composite heater according to any one of claims 8-12.

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