Wideband solid-state power amplifier based on isolator
By using broadband isolators and oxygen-free copper carrier plate design in GaN technology microwave solid-state power amplifiers, the problem of heat dissipation and broadband matching in GaN technology is solved, and efficient echo performance and rapid heat dissipation are achieved.
Patent Information
- Application Number
- CN202421621836.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-09
- Publication Date
- 2025-05-27
- Estimated Expiration
- 2034-07-09
AI Technical Summary
GaN technology's microwave solid-state power amplifiers have challenges in heat dissipation and broadband matching, resulting in slow heat dissipation speed and difficult circuit connection.
A broadband solid-state power amplifier based on isolator is designed, using a 50W GaN die, and a broadband isolator is added at the input and output matching. It uses its excellent echo characteristics and signal one-way transmission characteristics to improve echo performance, and achieve rapid heat dissipation through an oxygen-free copper carrier plate and an integrated boss.
A power amplifier with a stable output of more than 20W is realized, which improves echo performance, ensures barrier-free connection with other circuits, and solves the problem of high thermal density of GaN die through rapid heat dissipation.
Smart Images
Figure CN222915998U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of microwave solid-state power amplifier design, and specifically relates to a broadband solid-state power amplifier based on an isolator. Background Art
[0002] A microwave power amplifier is a very important component of a remote radar and communication system. Its function is to amplify the radio frequency signal of the radio frequency front end and then transmit it through an antenna, which can achieve a longer radar detection range, a longer communication distance, and better communication effects. Its performance directly determines the quality of the radar and communication system.
[0003] In the development history of modern solid-state power amplifiers, the amplifier die has gradually gone through silicon-based technology, GaAs technology, and GaN technology. Among them, the GaN amplifier die has a higher saturation output power and a higher energy conversion efficiency, and is the current mainstream technology. However, it also has certain defects. For example, with a smaller area, it requires faster heat dissipation, greater broadband matching difficulty, and is prone to burning when connected to other circuits. Therefore, in order to realize a microwave power solid-state circuit based on GaN technology, it is necessary to solve the heat dissipation problem and the problem of easy connection of the circuit under broadband matching.
[0004] In summary, the utility model provides a broadband solid-state power amplifier based on an isolator to solve the above problems. Summary of the Utility Model
[0005] In order to solve the above technical problems, the utility model provides the following technical solutions:
[0006] A broadband solid-state power amplifier based on an isolator includes a power amplifier and a broadband (4 - 6 GHz) isolator. The signal of the power amplifier is unidirectionally transmitted, and the S parameters of the input and output ports do not affect each other. A broadband (4 - 6 GHz) isolator is added before the input matching and after the output matching of the power amplifier. The excellent return loss characteristics and signal unidirectional transmission characteristics of the broadband isolator are used to improve the input and output return loss performance of the power amplifier module, and it can be connected to any other circuit without obstacles.
[0007] The power amplifier die uses a 50W die. The input and output of the power amplifier die adopt broadband passive matching, mainly using microstrip lines and lumped components, such as high-precision RF inductors, RF capacitors, and resistors.
[0008] Further, in the utility model, the circuit is assembled on a whole piece of oxygen-free copper carrier board.
[0009] Further, in the utility model, an integrated boss is designed on the oxygen-free copper carrier board under the 50w die, and the die is assembled on the boss, and the area of the boss is large enough.
[0010] Furthermore, in the present utility model, a tin-gold alloy foil is used as a welding material for the die bonding, and an eutectic process is employed.
[0011] Advantages: The present utility model has the following advantages:
[0012] The power amplifier die of the present utility model uses a die with a 50W saturated power output to ensure that the output power of the amplifier circuit can be stably above 20W. The input and output of the power amplifier die adopt broadband passive matching, mainly using microstrip lines and lumped components such as high-precision RF inductors, RF capacitors, resistors, etc. The use of lumped components is to reduce the size of the matching circuit. A broadband isolator is added before the input matching and after the output matching of the power amplifier. The excellent echo characteristics and signal unidirectional transmission characteristics of the broadband isolator are utilized to improve the input and output echo performance of the power amplifier module, and it can be connected to any other circuit without obstacles. The circuit is assembled on a single piece of oxygen-free copper carrier board to achieve fast heat dissipation. An integrated boss is designed on the oxygen-free copper carrier board under the die, and the die is assembled on the boss to achieve fast heat dissipation of the die; at the same time, the area of this boss should be large enough to ensure a fast heat dissipation rate because the GaN die has a small area and a high heat density during operation. A tin-gold alloy foil is used as a welding material for the die bonding, and an eutectic process is employed, resulting in a more secure bonding and better fast heat dissipation performance. Description of the Drawings
[0013] Figure 1 Schematic diagram of a 20W 4 - 5.9GHz solid-state power amplifier circuit based on an isolator;
[0014] Figure 2 Appearance dimensions of a 4 - 6GHz broadband isolator;
[0015] Figure 3 Technical specifications of a 4 - 6GHz broadband isolator;
[0016] Figure 4 Circuit PCB of a 20W 4 - 5.9GHz solid-state power amplifier based on an isolator;
[0017] Figure 5 Circuit carrier board of a 20W 4 - 5.9GHz solid-state power amplifier based on an isolator;
[0018] Figure 6 Small-signal gain test results of a 20W 4 - 5.9GHz solid-state power amplifier based on an isolator;
[0019] Figure 7 20W output test results of a 20W 4 - 5.9GHz solid-state power amplifier based on an isolator;
[0020] Figure 8 The test results of the 20W output gain of a 20W 4 - 5.9GHz solid - state power amplifier based on an isolator. Detailed implementation manners
[0021] To better understand the technical content of the present utility model, specific embodiments are hereby given and described in conjunction with the accompanying drawings as follows. In the present disclosure, aspects of the present utility model are described with reference to the drawings, and many illustrative embodiments are shown in the drawings. The embodiments of the present disclosure do not necessarily define all aspects of the present utility model. It should be understood that the various concepts and embodiments introduced above, as well as those described in more detail below, can be implemented in any of many ways, because the concepts and embodiments disclosed in the present utility model are not limited to any implementation manner. Additionally, some aspects of the present utility model can be used alone, or in any suitable combination with any other aspects disclosed in the present utility model.
[0022] Embodiment 1
[0023] As Figure 1-8 shown, this is the first embodiment of the present utility model. This embodiment provides a broadband solid - state power amplifier based on an isolator, which includes a power amplifier and a broadband (4 - 6GHz) isolator. The signal of the power amplifier is unidirectionally transmitted, and the S - parameters of the input and output ports do not affect each other. A broadband (4 - 6GHz) isolator is added before the input matching and after the output matching of the power amplifier. The excellent return loss characteristics and signal unidirectional transmission characteristics of the broadband isolator are used to improve the input and output return loss performance of the power amplifier module, and it can be connected to any other circuit without obstacles.
[0024] The power amplifier die uses a 50W die. The input and output of the power amplifier die adopt broadband passive matching, mainly using microstrip lines and lumped components, such as high - precision RF inductors, RF capacitors, and resistors.
[0025] As Figure 1-8 shown, the power amplifier die uses a die with a 50W saturated power output to ensure that the output power of the amplifier circuit can be stably above 20W. The input and output of the power amplifier die adopt broadband passive matching, mainly using microstrip lines and lumped components such as high - precision RF inductors, RF capacitors, and resistors. Using lumped components is to reduce the size of the matching circuit. A broadband isolator is added before the input matching and after the output matching of the power amplifier. The excellent return loss characteristics and signal unidirectional transmission characteristics of the broadband isolator are used to improve the input and output return loss performance of the power amplifier module, and it can be connected to any other circuit without obstacles.
[0026] Embodiment 2
[0027] Referring to Figure 1-8, which is the second embodiment of the present utility model, and this embodiment is based on the previous embodiment.
[0028] In this embodiment, the circuit is assembled on a whole piece of oxygen-free copper carrier board.
[0029] An integrated boss is designed on the oxygen-free copper carrier board under the 50w die, and the die is assembled on the boss, and the area of the boss should be large enough.
[0030] The die is welded using tin-gold alloy foil as the welding material and the eutectic process.
[0031] As Figure 1-7 shown, the circuit is assembled on a whole piece of oxygen-free copper carrier board to achieve the function of rapid heat dissipation. An integrated boss is designed on the oxygen-free copper carrier board under the die, and the die is assembled on the boss to achieve the rapid heat dissipation of the die; at the same time, the area of this boss should be large enough to make the heat dissipation speed fast enough, because the GaN die has a small area and a high thermal density during operation. The die is welded using tin-gold alloy foil as the welding material and the eutectic process, so the welding is more firm and the rapid heat dissipation performance is better.
[0032] During use, the power amplifier die uses a die with a 50W saturated power output to ensure that the output power of the amplifier circuit can be stabilized above 20W. The input and output of the power amplifier die adopt broadband passive matching, mainly using microstrip and lumped components such as high-precision RF inductors, RF capacitors, resistors, etc. Using lumped components is to reduce the size of the matching circuit. A broadband isolator is added before the input matching and after the output matching of the power amplifier. The excellent echo characteristics and signal unidirectional transmission characteristics of the broadband isolator are used to improve the input and output echo performance of the power amplifier module, and it can be connected to any other circuit without obstacle. The circuit is assembled on a whole piece of oxygen-free copper carrier board to achieve the function of rapid heat dissipation. An integrated boss is designed on the oxygen-free copper carrier board under the die, and the die is assembled on the boss to achieve the rapid heat dissipation of the die; at the same time, the area of this boss should be large enough to make the heat dissipation speed fast enough, because the GaN die has a small area and a high thermal density during operation. The die is welded using tin-gold alloy foil as the welding material and the eutectic process, so the welding is more firm and the rapid heat dissipation performance is better.
[0033] The standard parts used in this application document can be purchased from the market, and can also be customized according to the description of the specification and the drawings. The specific connection methods of each part all adopt conventional means such as bolts, rivets, welding, etc. that are mature in the prior art. The machines, parts and equipment all adopt conventional models in the prior art. The control method is automatically controlled by a controller, and the control circuit of the controller can be realized by simple programming by those skilled in the art, which belongs to the common general knowledge in the art. And this application document is mainly used to protect mechanical devices, so the control method and circuit connection will not be explained in detail in this application document.
[0034] Although the present utility model has been disclosed above with the preferred embodiments, it is not intended to limit the present utility model. Those of ordinary skill in the technical field to which the present utility model pertains can make various changes and modifications without departing from the spirit and scope of the present utility model. Therefore, the protection scope of the present utility model shall be subject to that defined by the claims.
Claims
1. A broadband solid-state power amplifier based on an isolator, comprising a power amplifier and a broadband isolator, the broadband isolator having an operating range of 4-6 GHz, characterized in that: The signal of the power amplifier is unidirectionally transmitted, and the S parameters of the input and output ports do not affect each other. A broadband isolator is added before the input matching and after the output matching of the power amplifier, and the excellent echo characteristics and unidirectional signal transmission characteristics of the broadband isolator are used to improve the input and output echo performance of the power amplifier module, and it can be connected to any other circuit without obstacles; The power amplifier core adopts 50W core, and the input and output of the power amplifier core adopt broadband passive matching, using microstrip lines and lumped components. The lumped components include high-precision RF inductors, RF capacitors and resistors.
2. The broadband solid-state power amplifier based on an isolator as claimed in claim 1, characterized in that: The circuit is assembled on a solid oxygen-free copper substrate.
3. The broadband solid-state power amplifier based on an isolator as claimed in claim 1, characterized in that: An integrated boss is designed on the oxygen-free copper carrier board under the 50w tube core, and the tube core is assembled on the boss, and the area of the boss must be large enough.
4. The broadband solid-state power amplifier based on an isolator as claimed in claim 1, characterized in that: The tube core is welded using tin-gold alloy foil as welding material using a eutectic process.