Surface acoustic wave resonance device

Abstract

The working frequency of the surface acoustic wave resonance device is greater than or equal to 2.3 GHz, and the surface acoustic wave resonance device comprises a substrate layer; the piezoelectric layer is located on the substrate layer, the heat conductivity coefficient of the substrate layer is larger than that of the piezoelectric layer, and the heat expansion coefficient of the substrate layer is smaller than that of the piezoelectric layer; the electrode structure is positioned on the piezoelectric layer; and the temperature compensation layer is positioned on the piezoelectric layer. The substrate layer is additionally arranged, and the heat conductivity coefficient of the substrate layer is larger than that of the piezoelectric layer, so that heat can be conducted more efficiently through the substrate layer, and the heat dissipation capacity of the device is improved. The thermal expansion coefficient of the substrate layer is smaller than that of the piezoelectric layer, thermal expansion of the piezoelectric layer can be effectively restrained through the substrate layer, the deformation resistance of the device is improved, the frequency temperature coefficient of the device is further improved, the frequency temperature coefficient does not need to be improved through a thick temperature compensation layer, and the manufacturing cost is reduced. Therefore, the electromechanical coupling coefficient reduction caused by the increase of the thickness of the temperature compensation layer can be effectively prevented, and the performance of the device is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, and in particular to a surface acoustic wave resonance device. Background Art

[0002] The RF front-end chips of wireless communication devices include power amplifiers, antenna switches, RF filters, multiplexers, and low-noise amplifiers, etc. Among them, RF filters include piezoelectric surface acoustic wave (SAW) filters, piezoelectric bulk acoustic wave (BAW) filters, micro-electro-mechanical system (MEMS) filters, integrated passive devices (IPD) filters, etc.

[0003] The quality factor (Q value) of the SAW resonator is relatively high. The RF filter made of SAW resonator has low insertion loss and high out-band rejection, that is, SAW filter, which is the mainstream RF filter used in wireless communication devices such as mobile phones and base stations. The SAW resonator has a negative temperature coefficient of frequency (TCF), that is, when the temperature rises, the resonant frequency of the resonator decreases, and when the temperature decreases, the resonant frequency increases. This reduces the reliability and stability of the SAW filter. In order to improve the characteristics of the resonant frequency of the SAW resonator drifting with the operating temperature, a temperature compensation layer is added to the piezoelectric layer. The temperature compensation layer has a frequency temperature coefficient opposite to that of the piezoelectric layer. The combination of the two makes the overall frequency temperature coefficient of the resonator tend to zero, improving the reliability and stability of the filter. This SAW resonator containing a temperature compensation layer is called a temperature compensated SAW (TC-SAW) resonator, and the filter composed of TC-SAW resonators is called a TC-SAW filter.

[0004] However, there are still many problems with surface acoustic wave resonator devices. Utility Model Content

[0005] The problem solved by the utility model is to provide a surface acoustic wave resonance device to improve the device performance.

[0006] To solve the above problems, the technical solution of the utility model provides a surface acoustic wave resonance device, the operating frequency of the surface acoustic wave resonance device is greater than or equal to 2.3 GHz, and includes: a substrate layer; a piezoelectric layer located on the substrate layer, the thermal conductivity of the substrate layer is greater than the thermal conductivity of the piezoelectric layer, and the thermal expansion coefficient of the substrate layer is less than the thermal expansion coefficient of the piezoelectric layer; an electrode structure located on the piezoelectric layer; a temperature compensation layer located on the piezoelectric layer, the temperature compensation layer covers the electrode structure, and the thickness of the temperature compensation layer ranges from 200 nanometers to 800 nanometers.

[0007] Optionally, it further includes: an intermediate layer located between the base layer and the piezoelectric layer, the thermal expansion coefficient of the intermediate layer is smaller than the thermal expansion coefficient of the piezoelectric layer; and the piezoelectric layer is located between the intermediate layer and the temperature compensation layer.

[0008] Optionally, the material of the intermediate layer includes silicon dioxide, silicon oxyfluoride, silicon oxynitride or silicon oxycarbide.

[0009] Optionally, the thickness of the intermediate layer is 4 microns to 20 microns.

[0010] Optionally, the electrode structure includes: a first bus and a second bus extending along a first direction and arranged in parallel along a second direction, the first direction being perpendicular to the second direction; a plurality of first electrode strips connected to the first bus, the plurality of first electrode strips being arranged in parallel along the first direction; a plurality of second electrode strips connected to the second bus, the plurality of second electrode strips being arranged in parallel along the first direction, the first electrode strips and the second electrode strips being staggered, and the first electrode strips and the second electrode strips having an overlapping area along the first direction.

[0011] Optionally, the electrode structure includes: a first metal layer; the material of the first metal layer includes: aluminum, molybdenum or copper.

[0012] Optionally, the electrode structure includes: a first metal layer, and a second metal layer located on the first metal layer; the material of the first metal layer includes: molybdenum; the material of the second metal layer includes: aluminum.

[0013] Optionally, the electrode structure includes: a first metal layer, a second metal layer located on the first metal layer, and a third metal layer located on the second metal layer; the material of the first metal layer includes: molybdenum; the material of the second metal layer includes: aluminum-copper alloy; the material of the third metal layer includes: titanium.

[0014] Optionally, the thickness of the first metal layer is 40 nanometers to 70 nanometers; the thickness of the second metal layer is 130 nanometers to 200 nanometers; and the thickness of the third metal layer is 9 nanometers to 15 nanometers.

[0015] Optionally, the minimum repetition period size of the electrode structure is: the center spacing size between adjacent first electrode strips, or the center spacing size between adjacent second electrode strips along the first direction; the minimum repetition period size of the electrode structure is: 1.2 microns to 3 microns.

[0016] Optionally, the duty cycle of the electrode structure is: the ratio of the sum of the width of a single first electrode strip and the width of a single second electrode strip along the first direction to the minimum repetition period size of the electrode structure; the duty cycle of the electrode structure is: 0.4 to 0.6.

[0017] Optionally, the material of the temperature compensation layer includes silicon dioxide, silicon oxyfluoride, silicon oxynitride or silicon oxycarbide.

[0018] Optionally, the material of the base layer includes: silicon-based material, sapphire, spinel, aluminum oxide or gallium arsenide; the silicon-based material includes: silicon or silicon carbide.

[0019] Optionally, the thickness of the base layer is 140 microns to 240 microns.

[0020] Optionally, the material of the piezoelectric layer includes: lithium niobate or lithium tantalate.

[0021] Optionally, the thickness of the piezoelectric layer is 0.3 microns to 20 microns.

[0022] Optionally, the operating frequency of the surface acoustic wave resonance device is: 2.3 GHz to 3 GHz.

[0023] Compared with the prior art, the technical solution of the utility model has the following advantages:

[0024] In the surface acoustic wave resonance device of the technical solution of the utility model, by adding the base layer, the thermal conductivity of the base layer is greater than the thermal conductivity of the piezoelectric layer, so the heat can be conducted more efficiently through the base layer, thereby improving the heat dissipation capacity of the device; the thermal expansion coefficient of the base layer is also smaller than the thermal expansion coefficient of the piezoelectric layer, so the thermal expansion of the piezoelectric layer can be effectively suppressed by the base layer to improve the deformation resistance of the device, thereby improving the frequency temperature coefficient (TCF) of the device, without the need to improve the frequency temperature coefficient through a thicker temperature compensation layer, thereby effectively preventing the electromechanical coupling coefficient from being reduced due to increasing the thickness of the temperature compensation layer, thereby improving the performance of the device.

[0025] Furthermore, it also includes: an intermediate layer located between the base layer and the piezoelectric layer, the thermal expansion coefficient of the intermediate layer is smaller than the thermal expansion coefficient of the piezoelectric layer; the piezoelectric layer is located between the intermediate layer and the temperature compensation layer. The thermal expansion coefficient of the additional intermediate layer is smaller than the thermal expansion coefficient of the piezoelectric layer, and it is located below the piezoelectric layer. The intermediate layer and the base layer jointly suppress the thermal expansion of the piezoelectric layer, thereby further improving the temperature coefficient of frequency (TCF) of the device. There is no need to improve the temperature coefficient of frequency through a thicker temperature compensation layer, and the thickness of the temperature compensation layer can be thinned. The mass load effect of the thinned temperature compensation layer is weakened, so that the electromechanical coupling coefficient (k t ) was promoted. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 and Figure 2 It is a schematic diagram of the structure of a surface acoustic wave resonance device;

[0027] Figure 3 and Figure 4 It is a schematic structural diagram of a surface acoustic wave resonance device in an embodiment of the utility model. DETAILED DESCRIPTION

[0028] As described in the background art, there are still many problems with the surface acoustic wave resonance device, which will be described in detail below with reference to the accompanying drawings.

[0029] Figure 1 and Figure 2 It is a structural schematic diagram of a surface acoustic wave resonance device.

[0030] Please refer to Figure 1 and Figure 2 , Figure 1 is a top view of a surface acoustic wave resonator device without the temperature compensation layer 102. Figure 2 yes Figure 1A schematic cross-sectional view along line AA in FIG. 1 shows a surface acoustic wave resonance device, comprising: a piezoelectric substrate 100; an electrode structure 101 located on the piezoelectric substrate 100, the electrode structure 101 comprising a first bus 1011 and a second bus 1012 extending along a first direction X and arranged in parallel along a second direction Y, the first direction X being perpendicular to the second direction Y; a plurality of first electrode strips 1013 connected to the first bus 1011, the plurality of first electrode strips 1013 being arranged in parallel along the first direction X; a plurality of second electrode strips 1014 connected to the second bus 1012, the plurality of second electrode strips 1014 being arranged in parallel along the first direction X, the first electrode strips 1013 and the second electrode strips 1014 being arranged in parallel along the first direction X, the first electrode strips 1013 and the second electrode strips 1014 being arranged in an alternating manner, and the first electrode strips 1013 and the second electrode strips 1014 having an overlapping area along the first direction X; and a temperature compensation layer 102 located on the piezoelectric substrate 100, the temperature compensation layer 102 covering the electrode structure.

[0031] It should be noted that the temperature compensation layer 102 and the piezoelectric substrate 100 have opposite temperature frequency shift characteristics, and the temperature coefficient of frequency (TCF) can be adjusted to tend to 0 ppm / °C, thereby improving the characteristic of the operating frequency drift of the surface acoustic wave resonator device with the operating temperature, and having higher frequency-temperature stability. The surface acoustic wave resonator device including the temperature compensation layer 102 is called a temperature compensated surface acoustic wave resonator device (i.e., TC-SAW resonator).

[0032] The temperature compensated SAW resonator benefits from the temperature compensation layer 102 and has better anti-frequency deviation characteristics, ie, better TCF, compared with ordinary SAW resonators, where TCF=TCV (temperature coefficient of velocity of sound)-TEC (thermal expansion coefficient).

[0033] However, the material of the piezoelectric substrate 100 is lithium niobate or lithium tantalate, and the thermal conductivity of lithium niobate or lithium tantalate is relatively small, so that the heat dissipation of the temperature-compensated surface acoustic wave resonator is relatively poor. In addition, the thermal expansion coefficient of lithium niobate or lithium tantalate is relatively large, so that the deformation resistance of the temperature-compensated surface acoustic wave resonator is relatively weak. In a high-temperature working environment, the TCF of the device will deteriorate. In order to improve TCF, a thicker temperature compensation layer 102 is required, but as the thickness of the temperature compensation layer 102 increases, the electromechanical coupling coefficient (k t ) will decrease, thus affecting the performance of the device.

[0034] On this basis, the utility model provides a surface acoustic wave resonance device, by adding the base layer, the thermal conductivity of the base layer is greater than the thermal conductivity of the piezoelectric layer, so the heat can be conducted more efficiently through the base layer, thereby improving the heat dissipation capacity of the device; the thermal expansion coefficient of the base layer is also smaller than the thermal expansion coefficient of the piezoelectric layer, so the thermal expansion of the piezoelectric layer can be effectively suppressed by the base layer to improve the deformation resistance of the device, thereby improving the frequency temperature coefficient (TCF) of the device, without the need to improve the frequency temperature coefficient through a thicker temperature compensation layer, thereby effectively preventing the electromechanical coupling coefficient from being reduced due to increasing the thickness of the temperature compensation layer, thereby improving the performance of the device.

[0035] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below with reference to the accompanying drawings.

[0036] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and therefore the present invention is not limited to the specific embodiments disclosed below.

[0037] Figure 3 and Figure 4 It is a schematic structural diagram of a surface acoustic wave resonance device in an embodiment of the utility model.

[0038] Please refer to Figure 3 and Figure 4 , Figure 3 is a top view of the surface acoustic wave resonator device without the temperature compensation layer 203, Figure 4 yes Figure 3 The cross-sectional schematic diagram along line BB in the figure shows a surface acoustic wave resonance device, wherein the operating frequency of the surface acoustic wave resonance device is greater than or equal to 2.3 GHz, and the device comprises: a substrate layer 200; a piezoelectric layer 201 located on the substrate layer 200, wherein the thermal conductivity of the substrate layer 200 is greater than the thermal conductivity of the piezoelectric layer 201, and the thermal expansion coefficient of the substrate layer 200 is less than the thermal expansion coefficient of the piezoelectric layer 201; an electrode structure 202 located on the piezoelectric layer 201; and a temperature compensation layer 203 located on the piezoelectric layer 201, wherein the temperature compensation layer 203 covers the electrode structure 202, and the thickness of the temperature compensation layer 203 is in the range of 200 nm to 800 nm.

[0039] It should be noted that, in this embodiment, the temperature compensation layer 203 and the piezoelectric layer 201 have opposite temperature frequency shift characteristics, and the temperature coefficient of frequency (TCF) can be adjusted to tend to 0 ppm / °C, thereby improving the characteristic of the operating frequency drift of the surface acoustic wave resonator device with the operating temperature, and having higher frequency-temperature stability. The surface acoustic wave resonator device including the temperature compensation layer 203 is called a temperature compensated surface acoustic wave resonator device (i.e., TC-SAW resonator).

[0040] The temperature compensated SAW resonator benefits from the temperature compensation layer 203 and has better anti-frequency deviation characteristics, ie, better TCF, compared with ordinary SAW resonators, where TCF=TCV (temperature coefficient of velocity of sound)-TEC (thermal expansion coefficient).

[0041] By adding the base layer 200, the thermal conductivity of the base layer 200 is greater than the thermal conductivity of the piezoelectric layer 201, so the heat can be conducted more efficiently through the base layer 200, thereby improving the heat dissipation capacity of the device; the thermal expansion coefficient of the base layer 200 is also smaller than the thermal expansion coefficient of the piezoelectric layer 201, so the thermal expansion of the piezoelectric layer 201 can be effectively suppressed by the base layer 200 to improve the deformation resistance of the device (i.e., improve TEC), and then improve the TCF of the device, without the need to use a thicker temperature compensation layer 203 to improve the frequency temperature coefficient, and thus can effectively prevent the electromechanical coupling coefficient from being reduced due to increasing the thickness of the temperature compensation layer 203, thereby improving the performance of the device.

[0042] Please continue to refer to Figure 3 In this embodiment, the surface acoustic wave resonance device also includes: an intermediate layer 204 located between the substrate layer 200 and the piezoelectric layer 201, the thermal expansion coefficient of the intermediate layer 204 is a positive value, and the thermal expansion coefficient of the intermediate layer 204 is less than the thermal expansion coefficient of the piezoelectric layer 201; the piezoelectric layer 201 is located between the intermediate layer 204 and the temperature compensation layer 203.

[0043] Currently, in order to improve TCF, a thicker temperature compensation layer 203 is required. However, a thicker temperature compensation layer 203 will affect the electromechanical coupling coefficient (k t). Since the temperature compensation layer 203 is generally made of silicon dioxide in a specific thickness range, whose thermal expansion coefficient is positive, and the temperature compensation layer 203 covers the electrode structure 202 and the piezoelectric layer 201, when the device is heated, the temperature compensation layer 203 can achieve stress neutralization with the piezoelectric layer 201 ((the thermal expansion coefficient is positive, which is larger than that of silicon dioxide)), so that the overall strain is effectively controlled, and the sound velocity change is also effectively controlled accordingly, thereby effectively improving the temperature frequency deviation coefficient. The thermal expansion coefficient of the added intermediate layer 204 is smaller than that of the piezoelectric layer. The intermediate layer 204 is located below the piezoelectric layer 201. The intermediate layer 204 and the base layer 200 jointly suppress the thermal expansion of the piezoelectric layer 202, thereby further improving the temperature coefficient of frequency (TCF) of the device. There is no need to improve the temperature coefficient of frequency through a thicker temperature compensation layer 203. The thickness of the temperature compensation layer 203 can be thinned so that the temperature compensation layer 203 can be thinned to a thin layer and play a passivation protection role to prevent water vapor from penetrating. Moreover, the mass load effect of the thinned temperature compensation layer 203 is weakened, so that the electromechanical coupling coefficient (k t ) was promoted.

[0044] In this embodiment, the material of the intermediate layer 204 includes silicon dioxide, silicon oxyfluoride, silicon oxynitride or silicon oxycarbide.

[0045] In this embodiment, the thickness of the intermediate layer 204 is 4 micrometers to 20 micrometers.

[0046] In other embodiments, the intermediate layer 204 may not be provided.

[0047] Please continue to refer to Figure 4 In this embodiment, the electrode structure 202 includes: a first bus 2021 and a second bus 2022 extending along a first direction X and arranged in parallel along a second direction Y, the first direction X is perpendicular to the second direction Y; a plurality of first electrode strips 2023 connected to the first bus 2021, the plurality of first electrode strips 2023 are arranged in parallel along the first direction X; a plurality of second electrode strips 2024 connected to the second bus 2022, the plurality of second electrode strips 2024 are arranged in parallel along the first direction X, the first electrode strips 2023 and the second electrode strips 2024 are arranged in an alternating manner, and the first electrode strips 2023 and the second electrode strips 2024 have an overlapping area along the first direction X.

[0048] In this embodiment, the minimum repetition period size of the electrode structure 202 is: along the first direction X, the center spacing size d1 between adjacent first electrode strips 2023, or the center spacing size d1 between adjacent second electrode strips 2024; the minimum repetition period size of the electrode structure 202 is: 1.2 microns to 3 microns.

[0049] In this embodiment, the duty cycle of the electrode structure 202 is: along the first direction X, the ratio of the sum of the width dimension d2 of a single first electrode strip 2023 and the width dimension d2 of a single second electrode strip 2024 to the minimum repetition period dimension of the electrode structure 202; the duty cycle of the electrode structure 202 is: 0.4 to 0.6.

[0050] In this embodiment, the electrode structure 202 is a multi-layer structure, and the electrode structure 202 includes: a first metal layer, a second metal layer located on the first metal layer, and a third metal layer located on the second metal layer.

[0051] The material density of the first metal layer is greater than the material density of the second metal layer and the material density of the third metal layer.

[0052] The material of the first metal layer includes molybdenum; the material of the second metal layer includes aluminum-copper alloy; and the material of the third metal layer includes titanium.

[0053] The thickness of the first metal layer is 40 nanometers to 70 nanometers; the thickness of the second metal layer is 130 nanometers to 200 nanometers; and the thickness of the third metal layer is 9 nanometers to 15 nanometers.

[0054] In other embodiments, the electrode structure may further include: a first metal layer, and a second metal layer located on the first metal layer.

[0055] The material density of the first metal layer is greater than the material density of the second metal layer, and the electrical conductivity of the first metal layer is less than the electrical conductivity of the second metal layer.

[0056] The material of the first metal layer includes molybdenum; the material of the second metal layer includes aluminum.

[0057] In other embodiments, the electrode structure may also be a single-layer structure, that is, the electrode structure only has a first metal layer (not shown); the material of the first metal layer includes: aluminum, molybdenum or copper.

[0058] In this embodiment, the material of the temperature compensation layer 203 includes silicon dioxide, silicon oxyfluoride, silicon oxynitride or silicon oxycarbide.

[0059] In this embodiment, the material of the base layer 200 includes: silicon-based material, sapphire, spinel, aluminum oxide or gallium arsenide; the silicon-based material includes: silicon or silicon carbide.

[0060] In this embodiment, the thickness of the base layer 200 is 140 micrometers to 240 micrometers.

[0061] In this embodiment, the material of the piezoelectric layer 201 includes lithium tantalate or lithium niobate.

[0062] In this embodiment, the thickness of the piezoelectric layer 201 is 0.3 micrometers to 20 micrometers.

[0063] In this embodiment, the operating frequency of the surface acoustic wave resonance device is in the high frequency band. Specifically, the operating frequency of the surface acoustic wave resonance device is: 2.3 GHz to 3 GHz.

[0064] It should be understood that the examples and embodiments herein are merely illustrative and that those skilled in the art may make various modifications and corrections without departing from the spirit and scope of the present invention as defined in this application and the appended claims.

Claims

1. A surface acoustic wave resonance device, wherein the operating frequency of the surface acoustic wave resonance device is greater than or equal to 2.3 GHz, characterized in that: include: basal layer; a piezoelectric layer located on the base layer, wherein the thermal conductivity of the base layer is greater than the thermal conductivity of the piezoelectric layer, and the thermal expansion coefficient of the base layer is less than the thermal expansion coefficient of the piezoelectric layer; an electrode structure located on the piezoelectric layer; A temperature compensation layer is located on the piezoelectric layer, the temperature compensation layer covers the electrode structure, and the thickness of the temperature compensation layer ranges from 200 nanometers to 800 nanometers.

2. The surface acoustic wave resonator device according to claim 1, characterized in that: Also includes: an intermediate layer located between the substrate layer and the piezoelectric layer, wherein the thermal expansion coefficient of the intermediate layer is smaller than the thermal expansion coefficient of the piezoelectric layer; The piezoelectric layer is located between the intermediate layer and the temperature compensation layer.

3. The surface acoustic wave resonator device according to claim 2, characterized in that: The material of the intermediate layer includes silicon dioxide, silicon oxyfluoride, silicon oxynitride or silicon oxycarbide.

4. The surface acoustic wave resonator device according to claim 2, characterized in that: The thickness of the intermediate layer is 4 microns to 20 microns.

5. The surface acoustic wave resonator device according to claim 1, characterized in that: The electrode structure includes: a first bus and a second bus extending along a first direction and arranged in parallel along a second direction, the first direction being perpendicular to the second direction; a plurality of first electrode strips connected to the first bus, the plurality of first electrode strips being arranged in parallel along the first direction; a plurality of second electrode strips connected to the second bus, the plurality of second electrode strips being arranged in parallel along the first direction, the first electrode strips and the second electrode strips being arranged in an alternating manner, and the first electrode strips and the second electrode strips having an overlapping area along the first direction.

6. The surface acoustic wave resonator device according to claim 5, characterized in that: The electrode structure includes: a first metal layer; the material of the first metal layer includes: aluminum, molybdenum or copper.

7. The surface acoustic wave resonator device according to claim 5, characterized in that: The electrode structure includes: a first metal layer, and a second metal layer located on the first metal layer; the material of the first metal layer includes: molybdenum; the material of the second metal layer includes: aluminum.

8. The surface acoustic wave resonator device according to claim 5, characterized in that: The electrode structure includes: a first metal layer, a second metal layer located on the first metal layer, and a third metal layer located on the second metal layer; the material of the first metal layer includes: molybdenum; the material of the second metal layer includes: aluminum-copper alloy; the material of the third metal layer includes: titanium.

9. The surface acoustic wave resonator device according to claim 8, characterized in that: The thickness of the first metal layer is 40 nanometers to 70 nanometers; the thickness of the second metal layer is 130 nanometers to 200 nanometers; The thickness of the third metal layer is 9 nanometers to 15 nanometers.

10. The surface acoustic wave resonator device according to claim 5, characterized in that: The minimum repetition period size of the electrode structure is: the center distance size between adjacent first electrode strips or the center distance size between adjacent second electrode strips along the first direction; the minimum repetition period size of the electrode structure is: 1.2 microns to 3 microns.

11. The surface acoustic wave resonator device according to claim 10, characterized in that: The duty cycle of the electrode structure is: the ratio of the sum of the width of a single first electrode strip and the width of a single second electrode strip along the first direction to the minimum repetition period size of the electrode structure; the duty cycle of the electrode structure is: 0.4 to 0.

6.

12. The surface acoustic wave resonator device according to claim 1, characterized in that: The material of the temperature compensation layer includes silicon dioxide, silicon oxyfluoride, silicon oxynitride or silicon oxycarbide.

13. The surface acoustic wave resonator device according to claim 1, characterized in that: The material of the base layer includes: silicon-based material, sapphire, spinel, aluminum oxide or gallium arsenide; the silicon-based material includes: silicon or silicon carbide.

14. The surface acoustic wave resonator device according to claim 1, characterized in that: The thickness of the base layer is 140 microns to 240 microns.

15. The surface acoustic wave resonator device according to claim 1, characterized in that: The material of the piezoelectric layer includes: lithium niobate or lithium tantalate.

16. The surface acoustic wave resonator device according to claim 1, characterized in that: The thickness of the piezoelectric layer is 0.3 micrometers to 20 micrometers.

17. The surface acoustic wave resonator device according to claim 1, characterized in that: The operating frequency of the surface acoustic wave resonance device is 2.3 GHz to 3 GHz.

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