Substrate structure

Abstract

The utility model provides a substrate structure. The substrate structure comprises a core structure, a first joint structure, a second joint structure, a support structure, a first insulating layer and a second insulating layer. The core structure comprises a core layer and an opening penetrating through the core layer. The opening penetrates through a first surface of the core layer and a second surface opposite to the first surface. The first bonding structure is disposed in the opening and close to the first surface of the core layer. The second bonding structure is disposed in the opening and close to the second surface of the core layer. The supporting structure is arranged in the opening and located between the first joint structure and the second joint structure, and the supporting structure is of a hollow structure. The first insulating layer is disposed on the first surface of the core layer and the first bonding structure. The second insulating layer is disposed on the second surface of the core layer and the second bonding structure. A cavity of the core structure is formed by a space defined by the first joint structure, the second joint structure and the supporting structure. The substrate structure provided by the utility model can reduce the insertion loss and further improve the quality of signal transmission.

Description

Technical Field

[0001] The utility model relates to a structure, and particularly to a substrate structure. Background Art

[0002] In order to cope with the development of 5G communication, the complexity of substrate design has also increased to meet impedance matching and good and fast signal transmission. However, in a circuit substrate, the insertion loss of the inner-layer circuit is often more than that of the outer-layer circuit, which affects signal transmission. Therefore, how to reduce the insertion loss of the inner-layer circuit of the substrate is a problem to be solved at present. Summary of the Utility Model

[0003] The utility model provides a substrate structure, which can reduce insertion loss and thus improve the quality of signal transmission.

[0004] A substrate structure of the utility model includes a core structure, a first bonding structure, a second bonding structure, a support structure, a first insulating layer, and a second insulating layer. The core structure includes a core layer and an opening penetrating the core layer. The core layer has a first surface and a second surface opposite to the first surface. The opening penetrates the first surface and the second surface of the core layer. The first bonding structure is disposed in the opening and close to the first surface of the core layer. The second bonding structure is disposed in the opening and close to the second surface of the core layer. The support structure is disposed in the opening and between the first bonding structure and the second bonding structure, wherein the support structure is a hollow structure. The first insulating layer is disposed on the first surface of the core layer and the first bonding structure. The second insulating layer is disposed on the second surface of the core layer and the second bonding structure. The space surrounded by the first bonding structure, the second bonding structure, and the support structure constitutes the cavity of the core structure.

[0005] In an embodiment of the utility model, each of the first bonding structure and the second bonding structure includes a bonding base, a plurality of bumps, and a conductive structure. The plurality of bumps are disposed on the sidewall of the bonding base. The conductive structure is disposed on the upper surface and / or the lower surface of the bonding base, wherein the upper surface and the lower surface of the bonding base are opposite, and the sidewall of the bonding base is connected between the upper surface and the lower surface.

[0006] In an embodiment of the utility model, the plurality of bumps are located between the bonding base and the sidewall of the opening.

[0007] In an embodiment of the utility model, the plurality of bumps are in direct contact with the sidewall of the opening.

[0008] In an embodiment of the utility model, there is a gap between the bonding base and the sidewall of the opening.

[0009] In an embodiment of the present utility model, the above-mentioned first insulating layer is further located in the gap between the bonding substrate of the first bonding structure and the side wall of the opening, and the second insulating layer is further located in the gap between the bonding substrate of the second bonding structure and the side wall of the opening.

[0010] In an embodiment of the present utility model, the above-mentioned support structure has an annular shape and is arranged along the side wall of the opening.

[0011] In an embodiment of the present utility model, there is a gap between the above-mentioned support structure and the side wall of the opening.

[0012] In an embodiment of the present utility model, the above-mentioned first insulating layer and / or the second insulating layer are further located in the gap between the support structure and the side wall of the opening.

[0013] In an embodiment of the present utility model, the above-mentioned substrate structure further includes a vent hole that penetrates the first bonding structure or the second bonding structure to communicate the cavity with the external environment through the vent hole.

[0014] Based on the above, the substrate structure of the present utility model has a cavity in its core structure, which can reduce the insertion loss of the circuit near the core structure, thereby improving the quality of signal transmission.

[0015] To make the above features and advantages of the present utility model more obvious and understandable, specific embodiments are hereinafter given and described in detail in conjunction with the accompanying drawings as follows. Description of the Drawings

[0016] Figure 1A is a cross-sectional schematic view of a substrate structure according to an embodiment of the present utility model;

[0017] Figure 1B is along Figure 1A sectional schematic view cut along line A-A';

[0018] Figure 1C is along Figure 1A sectional schematic view cut along line B-B';

[0019] Figure 2A is a cross-sectional schematic view of a core structure according to an embodiment of the present utility model;

[0020] Figure 2B is a top view schematic view of a core structure according to an embodiment of the present utility model;

[0021] Figure 3A is a cross-sectional schematic view of a bonding structure according to an embodiment of the present utility model;

[0022] Figure 3B is a top view schematic view of a bonding structure according to an embodiment of the present utility model;

[0023] Figure 4A is a cross-sectional schematic view of a support structure according to an embodiment of the present utility model;

[0024] Figure 4B is a top view schematic view of a support structure according to an embodiment of the present utility model;

[0025] Figures 5 to 7 is a cross-sectional schematic view of a manufacturing process of a substrate structure according to an embodiment of the present utility model. Detailed implementation manners

[0026] In the drawings, for clarity, the thicknesses of layers, films, panels, regions, etc. are enlarged. Throughout the specification, like reference numerals denote like components. It should be understood that when a component such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another component, it can be directly on or connected to the other component, or intervening components may also be present. In contrast, when a component is referred to as being "directly on" or "directly connected to" another component, no intervening component is present. As used herein, "connected" can refer to physical and / or electrical connection. Furthermore, "electrically connected" or "coupled" can mean that there are other components between two components.

[0027] It should be understood that although terms such as "first", "second", etc. may be used herein to describe various components, parts, regions, layers, and / or portions, these components, parts, regions, and / or portions should not be limited by these terms. These terms are only used to distinguish one component, part, region, layer, or portion from another component, part, region, layer, or portion. Thus, the "first component", "part", "region", "layer", or "portion" discussed below can be referred to as a second component, part, region, layer, or portion without departing from the teachings herein.

[0028] Figure 1A is a cross-sectional schematic view of a substrate structure according to an embodiment of the present utility model. Figure 1B is along Figure 1A sectional view taken along line A-A'. Figure 1C is along Figure 1A sectional view taken along line B-B'. Figure 2A is a cross-sectional schematic view of a core structure according to an embodiment of the present utility model. Figure 2B is a top view schematic view of a core structure according to an embodiment of the present utility model. Figure 3A is a cross-sectional schematic view of a bonding structure according to an embodiment of the present utility model. Figure 3B is a top view schematic view of a bonding structure according to an embodiment of the present utility model. Figure 4AA cross-sectional schematic view of a support structure according to an embodiment of the present invention. Figure 4B A top view schematic diagram of a support structure according to an embodiment of the present invention. For clear illustration, Figure 2B only the core layer 101 is shown, Figure 3B only the bonding substrate 106 and the bumps 107 are shown while the remaining components are omitted. For the omitted parts, reference can be made to Figure 2A and Figure 3A for understanding.

[0029] Please refer to Figures 1A to 1C , the substrate structure 10 includes a core structure 100, a first bonding structure 105a, a second bonding structure 105b, a support structure 109, a first insulating layer 110a, and a second insulating layer 110b. The core structure 100 includes a core layer 101 and an opening OP penetrating the core layer 101. The core layer 101 has a first surface 101a and a second surface 101b opposite to the first surface 101a. The opening OP penetrates the first surface 101a and the second surface 101b of the core layer 101. The first bonding structure 105a is disposed in the opening OP of the core layer 101 and near the first surface 101a of the core layer 101. The second bonding structure 105b is disposed in the opening OP of the core layer 101 and near the second surface 101b of the core layer 101. The support structure 109 is disposed in the opening OP of the core layer 101 and between the first bonding structure 105a and the second bonding structure 105b, wherein the support structure 109 is a hollow structure. The first insulating layer 110a is disposed on the first surface 101a of the core layer 101 and the first bonding structure 105a, and the second insulating layer 110b is disposed on the second surface 101b of the core layer 101 and the second bonding structure 105b. The space surrounded by the first bonding structure 105a, the second bonding structure 105b, and the support structure 109 constitutes the cavity CA of the core structure 100.

[0030] In some embodiments, the core structure 100 may further include core conductive layers 102a and 102b. The core conductive layer 102a is disposed on the first surface 101a of the core layer 101, and the core conductive layer 102b is disposed on the second surface 101b of the core layer 101. In other embodiments, the core structure 100 may further include conductive posts (not shown) penetrating the core layer 101 to electrically connect the core conductive layer 102a and the core conductive layer 102b, but the present invention is not limited thereto.

[0031] In some embodiments, the size (such as width or length) of the opening OP is less than or equal to half of the size (such as width or length) of the core layer 101. For example, the width W1 of the opening OP (marked in Figure 2B ) is less than or equal to the width W2 of the core layer 101 (marked in Figure 2B) half. In this embodiment, an opening OP is schematically shown in the core layer 101, but it is not intended to limit the present invention. In other embodiments, the core layer 101 may include multiple openings OP.

[0032] In some embodiments, when viewed from a top-down perspective, the shape of the opening OP of the core layer 101 is rectangular (as Figure 2B shown), but the present invention is not limited thereto. In other embodiments, when viewed from a top-down perspective, the shape of the opening OP of the core layer 101 may include a circle, a rectangle, an ellipse, or other suitable shapes.

[0033] In some embodiments, the first bonding structure 105a includes a bonding substrate 106a, a plurality of bumps 107a, and a conductive structure 108a, and the second bonding structure 105b includes a bonding substrate 106b, a plurality of bumps 107b, and a conductive structure 108b, similar to Figure 3A and Figure 3B the bonding structure 105 shown. For ease of explanation, the following uses Figure 3A and Figure 3B the bonding structure 105 shown to illustrate the first bonding structure 105a and the second bonding structure 105b. Please refer to Figure 3A and Figure 3B , the bonding structure 105 may include a bonding substrate 106, a plurality of bumps 107, and a conductive structure 108. The plurality of bumps 107 may be disposed on the sidewall S2 of the bonding substrate 106 and be in direct contact with the sidewall S2. The conductive structure 108 may be disposed on the upper surface S3 and / or the lower surface S4 of the bonding substrate 106. For example, the conductive structure 108 may include a conductive circuit layer 1081 disposed on the upper surface S3 of the bonding substrate 106 and a conductive circuit layer 1082 disposed on the lower surface S4 of the bonding substrate 106. The upper surface S3 of the bonding substrate 106 is opposite to the lower surface S4, and the sidewall S2 is connected between the upper surface S3 and the lower surface S4. In some embodiments, the conductive structure 108 may further include a via hole 1083 disposed in the bonding substrate 106 to electrically connect the conductive circuit layers 1081 and 1082 on the upper surface S3 and the lower surface S4 of the bonding substrate 106.

[0034] Returning to Figure 1A and Figure 1B , the bumps 107a of the first bonding structure 105a are located between the bonding substrate 106a and the sidewall S1 of the opening OP, and the bumps 107b of the second bonding structure 105b are located between the bonding substrate 106b and the sidewall S1 of the opening OP to fix the first bonding structure 105a and the second bonding structure 105b in the opening OP of the core layer 106. In some embodiments, the bumps 107a, 107b are in direct contact with the sidewall S1 of the opening OP.

[0035] In some embodiments, as Figure 1B shown, there may be a gap AG1 between the bonding substrate 106a of the first bonding structure 105a and the sidewall S1 of the opening OP, and the gap AG1 may be filled with the first insulating layer 110a. That is, a part of the first insulating layer 110a may be located between the bonding substrate 106a and the core layer 101. In some embodiments, the width of the gap AG1 may be greater than or equal to 50 μm, for example, between 65 μm and 85 μm or other suitable ranges. Similarly, there may be a gap (not shown, with a similar Figure 1B configuration) between the bonding substrate 106b of the second bonding structure 105b and the sidewall S1 of the opening OP, and this gap may be filled with the second insulating layer 110b. That is, a part of the second insulating layer 110b may be located between the bonding substrate 106b and the core layer 101. The gap between the bonding substrate 106b and the sidewall S1 of the opening OP may have a width range similar to that of the gap AG1.

[0036] In some embodiments, the size (such as width, length, or height) of the bonding substrate 106a of the first bonding structure 105a is smaller than the size (such as width, length, or depth) of the opening OP of the core layer 101. For example, the width (such as Figure 3A the width W3 shown) of the bonding substrate 106a of the first bonding structure 105a is slightly smaller than the width W1 of the opening OP of the core layer 101 (marked in Figure 2A ). The height (such as Figure 3A the height H2 shown) of the bonding substrate 106a of the first bonding structure 105a is smaller than the depth of the opening OP of the core layer 101, that is, the height H1 of the core layer 101 (marked in Figure 2A ).

[0037] In some embodiments, the size (such as width, length, or height) of the bonding substrate 106b of the second bonding structure 105b is smaller than the size (such as width, length, or depth) of the opening OP of the core layer 101. For example, the width (such as Figure 3A the width W3 shown) of the bonding substrate 106b of the second bonding structure 105b is slightly smaller than the width W1 of the opening OP of the core layer 101 (marked in Figure 2A ). The height (such as Figure 3A the height H2 shown) of the bonding substrate 106b of the second bonding structure 105b is smaller than the depth of the core layer 101, that is, the height H1 of the core layer 101 (marked in Figure 2A ).

[0038] In some embodiments, the upper surface of the bonding substrate 106a of the first bonding structure 105a is substantially flush with the first surface 101a of the core layer 101. In some embodiments, the lower surface of the bonding substrate 106b of the second bonding structure 105b is substantially flush with the second surface 101b of the core layer 101.

[0039] In some embodiments, when viewed from a top-down perspective, the support structure 109 has an annular shape, such as Figure 4B shown, the shape of the support structure 109 is a rectangular ring. In some embodiments, the support structure 109 can be composed of four enclosures, and when viewed from a top-down perspective, the four enclosures can enclose a closed figure, making the support structure 109 a hollow structure.

[0040] In some embodiments, the shape of the support structure 109 can correspond to the shape of the opening OP of the core layer 101.

[0041] In some embodiments, the support structure 109 can be disposed along the sidewall S1 of the opening OP of the core layer 101, such that each enclosure of the support structure 109 is disposed on the corresponding sidewall S1 of the opening OP of the core layer 101.

[0042] In some embodiments, there is a gap AG2 between the support structure 109 and the opening OP of the core layer 101, as Figure 1C shown. The gap AG2 can be filled with the first insulating layer 110a and / or the second insulating layer 110b. That is, part of the first insulating layer 110a and / or the second insulating layer 110b can be located between the support structure 109 and the core layer 101. In some embodiments, the width of the gap AG2 can be greater than or equal to 50 μm, for example, between 65 μm and 85 μm or other suitable ranges. Figure 1C Although it is shown in [reference] that there is a gap AG2 between each side enclosure of the support structure 109 and the sidewall S1 of the opening OP, it is not intended to limit the present invention. The gap AG2 can exist between any one or more side enclosures of the support structure 109 and the sidewall S1 of the opening OP. For example, in other embodiments, the gap AG2 can exist between the left side enclosure of the support structure 109 and the sidewall S1 of the opening OP, and the other side enclosures can be in direct contact with the core layer 101 without a gap.

[0043] In some embodiments, the size (such as width, length, or height) of the support structure 109 is smaller than the size (such as width, length, or depth) of the opening OP of the core layer 101. For example, the width W5 of the support structure 109 (labeled in Figure 4A ) is slightly smaller than the width W1 of the opening OP of the core layer 101 (labeled in Figure 2A ). The height H3 of the support structure 109 (labeled in Figure 4A)Less than the depth of the opening OP of the core layer 101 (i.e., the height H1 of the core layer 101 (marked in Figure 2A ))).

[0044] In some embodiments, the sum of the height of the bonding base 106a of the first bonding structure 105a (such as the height H2 shown in Figure 3A ), the height of the bonding base 106b of the second bonding structure 105b (such as the height H2 shown in Figure 3A ) and the height H3 of the support structure 109 is approximately equal to the height H1 of the core layer 101.

[0045] The first bonding structure 105a, the second bonding structure 105b and the support structure 109 are arranged corresponding to the opening OP of the core layer 101 to form a cavity CA in the core layer 101. Therefore, the number of the first bonding structure 105a, the second bonding structure 105b and the support structure 109 is basically the same as the number of the opening OP of the core layer 101. Since there is a cavity CA in the core structure 100, and the dielectric constant of air is small and the dissipation factor is small, the insertion loss of the circuit near the core structure 100 can be reduced, thereby improving the quality of signal transmission.

[0046] In some embodiments, the substrate structure 10 may further include a first conductive layer 112a and a second conductive layer 112b. The first conductive layer 112a is disposed on the first insulating layer 110a and a part of the first conductive layer 112a may pass through the first insulating layer 110a and be electrically connected to the core conductive layer 102a of the core structure 100 or the conductive structure 108a of the first bonding structure 105a. The second conductive layer 112b is disposed on the second insulating layer 110b and a part of the second conductive layer 112b may pass through the second insulating layer 110b and be electrically connected to the core conductive layer 102b of the core structure 100 or the conductive structure 108b of the second bonding structure 105b.

[0047] In some embodiments, the substrate structure 10 may further include a third insulating layer 120a and a third conductive layer 122a sequentially disposed on the first conductive layer 112a. A part of the third conductive layer 122a may penetrate through the third insulating layer 120a and be electrically connected to the first conductive layer 112a. The substrate structure 10 may further include a fourth insulating layer 120b and a fourth conductive layer 122b sequentially disposed on the second conductive layer 112b. A part of the fourth conductive layer 122b may penetrate through the fourth insulating layer 120b and be electrically connected to the second conductive layer 112b. In this embodiment, two insulating layers and two conductive layers are schematically shown on the upper and lower sides of the core structure 100 respectively, but it is not intended to limit the present invention. Any number of insulating layers and conductive layers may be provided on the upper and lower sides of the core structure 100 according to actual needs. In addition, the number of conductive layers on the upper side of the core structure 100 and the number of conductive layers on the lower side of the core structure 100 may be the same or different, and the present invention is not limited thereto.

[0048] In some embodiments, the substrate structure 10 may further include a passivation layer 130a and a passivation layer 130b. The passivation layer 130a is disposed on the third insulating layer 120a and laterally encapsulates the third conductive layer 122a. The passivation layer 130b is disposed on the fourth insulating layer 120b and laterally encapsulates the fourth conductive layer 122b. In some embodiments, the passivation layer 130a may expose a part of the surface of the third conductive layer 122a, and the passivation layer 130b may expose a part of the surface of the fourth conductive layer 122b.

[0049] In some embodiments, the substrate structure 10 may further include surface treatment layers 140a, 140b. The surface treatment layer 140a may be disposed on the surface of the exposed third conductive layer 122a, and the surface treatment layer 140b may be disposed on the surface of the exposed fourth conductive layer 122b to protect the third conductive layer 122a and the fourth conductive layer 122b and reduce adverse effects such as contamination and oxidation.

[0050] In some embodiments, the substrate structure 10 further includes vent holes V1, V2. The vent hole V1 penetrates through the passivation layer 130a, the third insulating layer 120a, the first insulating layer 110a, and the bonding substrate 106a of the first bonding structure 105a. The vent hole V2 penetrates through the passivation layer 130b, the fourth insulating layer 120b, the second insulating layer 110b, and the bonding substrate 106b of the second bonding structure 105b. In this way, the cavity CA can be communicated with the external environment through the vent holes V1, V2 to balance the pressure and reduce adverse effects such as deformation or board explosion of the substrate structure 10 caused by the pressure difference between the cavity CA and the external environment, thereby improving the reliability of the substrate structure 10.

[0051] Figure 1ASchematically shown is that a cavity CA can be connected to two air vents V1 and V2, but this is not intended to limit the present invention. A cavity CA can be connected to one or more air vents, which can be adjusted according to actual needs. For example, in other embodiments, the cavity CA can be connected to only one of the air vents V1 or V2.

[0052] Figures 5 to 7 is a cross-sectional schematic view of a manufacturing process of a substrate structure according to an embodiment of the present invention. It must be noted here that Figures 5 to 7 The embodiments of Figures 1A to 1C adopt the component numbers and some contents of the embodiments of

[0053] Please refer to Figure 5 , providing a core structure 100, a first bonding structure 105a, a second bonding structure 105b, and a support structure 109.

[0054] The core structure 100 may include a core layer 101, an opening OP penetrating the core layer 101, and core conductive layers 102a and 102b, for example, as shown in the embodiments of Figure 2A and Figure 2B For example, please refer to Figure 2A and Figure 2B , the manufacturing method of the core structure 100 may include the following steps. First, provide a resin substrate (not shown) and conductive material layers (not shown) disposed on two opposite surfaces of the resin substrate. In some embodiments, the resin substrate may include epoxy resin impregnated glass fiber cloth, Ajinomoto Build-up Film material, bismaleimide triazine resin (BT) resin, or other suitable materials. In some embodiments, the conductive material layer may include copper, aluminum, a combination thereof, or other suitable conductive materials. Then, form conductive patterns on two opposite surfaces of the resin substrate by a semi-additive method or other suitable methods, and remove the conductive material layers not covered by the conductive patterns to form the core conductive layers 102a and 102b. Then, part of the resin substrate can be removed by stamping, mechanical forming, or other suitable processes to form the opening OP, and the remaining resin substrate forms the core layer 101. The opening OP can expose the inner sidewall of the core layer 101. That is to say, the sidewall S1 of the opening OP is the inner sidewall of the core layer 101.

[0055] In some embodiments, the width W1 of the opening OP may be less than or equal to half of the width W2 of the core layer 101, but the present invention is not limited thereto.

[0056] The first bonding structure 105a and the second bonding structure 105b may each include a bonding substrate (such as bonding substrates 106a, 106b), a plurality of bumps (such as bumps 107a, 107b), and a conductive structure (such as conductive structures 108a, 108b), for example, may be as shown in the bonding structure 105 of Figure 3A and Figure 3B As shown. For example, referring to Figure 3A and Figure 3B , the manufacturing method of the bonding structure 105 may include the following steps. Provide a resin substrate (not shown) and conductive material layers (not shown) disposed on two opposite surfaces of the resin substrate. In some embodiments, the above resin substrate and conductive material layers may be similar to the resin substrate and conductive material layers used in manufacturing the core structure 100 above. Thereafter, vias (not shown) may be formed in the resin substrate and the conductive material layers by mechanical drilling, laser drilling, or other suitable means. Subsequently, conductive patterns are formed on two opposite surfaces of the resin substrate and in the vias by a semi-additive method or other suitable method, and the conductive material layers not covered by the conductive patterns are removed to form the conductive structure 108. Then, the resin substrate may be cut into a desired shape and size by stamping, mechanical forming, or other suitable processes to form the bonding substrate 106 and a plurality of bumps 107, wherein the plurality of bumps 107 may be disposed, for example, on each sidewall S2 of the bonding substrate 106.

[0057] In some embodiments, the width W3 of the bonding substrate 106 is slightly smaller than the width W1 of the opening OP of the core layer 101 to facilitate placing the bonding substrate 106 in the opening OP of the core layer 101 in subsequent processes.

[0058] In some embodiments, the width W7 of the bump 107 may be slightly larger than half of the difference between the width W1 of the opening OP and the width W3 of the bonding substrate 106 (i.e., (W1 - W3) / 2), such that the maximum width W4 of the bonding structure 105 (i.e., the sum of the widths of the bonding substrate 106 and the two bumps 107)) may be slightly larger than the width W1 of the opening OP. In this way, the bonding substrate 106 can be fixed in the opening OP by the bumps 107 in subsequent processes.

[0059] The support structure 109 may be, for example, as shown in the embodiments of Figure 4A and Figure 4B As shown. For example, referring to Figure 4A and Figure 4B , a support structure 109 having an annular shape may be formed by stamping, mechanical forming, molding, or other suitable processes on the resin substrate. The above resin substrate may be similar to the resin substrate used in manufacturing the core structure 100 above.

[0060] In some embodiments, the width W5 of the support structure 109 may be slightly smaller than the width W1 of the opening OP of the core layer 101, so as to facilitate placing the support structure 109 in the opening OP of the core layer 101 in subsequent processes.

[0061] In some embodiments, the width W6 of each enclosure wall of the support structure 109 is at least 1 mm or more, so as to provide support between the first bonding structure 105a and the second bonding structure 105b in subsequent processes.

[0062] Please refer to Figure 5 and Figure 6 , install the second bonding structure 105b in the opening OP from the side of the opening OP of the core layer 101 close to the second surface 101b. For example, the second bonding structure 105b can be embedded into the core layer 101 through a plurality of bumps 107b, such that the lower surface of the bonding substrate 106b of the second bonding structure 105b is substantially flush with the second surface 101b of the core layer 101. The bumps 107b can be fixed to the side wall S1 of the opening OP and be in direct contact with the core layer 101. Since the width of the bonding substrate 106b is slightly smaller than the width of the opening OP, there may be a gap between the bonding substrate 106b and the side wall S1 of the opening OP (refer to Figure 1B as shown).

[0063] Then, install the support structure 109 in the opening OP. The support structure 109 can be arranged along the side wall S1 of the opening OP of the core layer 101.

[0064] There may be a gap AG2 between the support structure 109 and the side wall S1 of the opening OP. For example, there may be a gap AG2 formed between at least one side enclosure wall of the support structure 109 and the side wall S1 of the opening OP, and the enclosure walls on other sides without a gap formed with the side wall S1 of the opening OP can be in direct contact with the core layer 101.

[0065] After that, install the first bonding structure 105a in the opening OP from the side of the opening OP close to the first surface 101a. For example, the first bonding structure 105a can be embedded into the core layer 101 through a plurality of bumps 107a, such that the upper surface of the bonding substrate 106a of the first bonding structure 105a is substantially flush with the first surface 101a of the core layer 101. The bumps 107a can be fixed to the side wall S1 of the opening OP and be in direct contact with the core layer 101. Since the width of the bonding substrate 106a is slightly smaller than the width of the opening OP, there may be a gap AG1 between the bonding substrate 106a and the side wall S1 of the opening OP (as shown in Figure 1B ).

[0066] The cavity CA can be formed by installing the first bonding structure 105a, the support structure 109, and the second bonding structure 105b in the opening OP of the core layer 101.

[0067] Please refer to Figure 6 and Figure 7 , a first insulating layer 110a and a first conductive material layer 112a' are formed on the first surface 101a of the core layer 101 and the first bonding structure 105a, and a second insulating layer 110b and a second conductive material layer 112b' are formed on the second surface 101b of the core layer 101 and the second bonding structure 105b. For example, the first insulating layer 110a and the first conductive material layer 112a' can be formed on the first surface 101a of the core layer 101 and the first bonding structure 105a by a lamination process, and the second insulating layer 110b and the second conductive material layer 112b' can be formed on the second surface 101b of the core layer 101 and the second bonding structure 105b.

[0068] In some embodiments, during the lamination process, the first insulating layer 110a can also fill the gap AG1 between the first bonding structure 105a and the sidewall S1 of the opening OP and the gap AG2 between the support structure 109 and the sidewall S1 of the opening OP to further fix the first bonding structure 105a and the support structure 109 in the opening OP.

[0069] In some embodiments, during the lamination process, the second insulating layer 110b can also fill the gap between the second bonding structure 105b and the sidewall S1 of the opening OP and the gap AG2 between the support structure 109 and the sidewall S1 of the opening OP to further fix the second bonding structure 105b and the support structure 109 in the opening OP.

[0070] Please refer to Figure 7 , a first conductive layer 112a is formed on the first surface 101a of the core layer 101, and a second conductive layer 112b is formed on the second surface 101b of the core layer 101. For example, through-hole vias (not shown) can be formed in the first insulating layer 110a and the second insulating layer 110b respectively by a drilling process, a laser drilling process, or other suitable processes to expose a part of the underlying conductive layer (such as the core conductive layers 102a, 102b, the conductive structure 108a, or the conductive structure 108b), and then a conductive pattern is formed on the first conductive material layer 112a' and the second conductive material layer 112b' by a semi-additive process or other suitable methods, and the first conductive material layer 112a' and the second conductive material layer 112b' not covered by the conductive pattern are removed to form the first conductive layer 112a and the second conductive layer 112b.

[0071] Please refer toFigure 1A A third insulating layer 120a and a third conductive layer 122a are formed on the first insulating layer 110a, and a fourth insulating layer 120b and a fourth conductive layer 122b are formed on the second insulating layer 110b, which can be formed in a manner similar to the formation methods of the above-mentioned first insulating layer 110a, second insulating layer 110b, first conductive layer 112a and second conductive layer 112b. The above process can be repeated until the desired number of insulating layers and conductive layers is reached. The present invention is not limited thereto.

[0072] After that, passivation layers 130a and 130b can be respectively formed on the outermost insulating layers (such as the third insulating layer 120a and the fourth insulating layer 120b) to protect the internal structure from adverse effects such as contamination, moisture absorption, and oxidation. The passivation layers 130a and 130b may have openings to expose the surfaces of the outermost conductive layers (such as the third conductive layer 122a and the fourth conductive layer 122b).

[0073] In some embodiments, surface treatment can be performed on the exposed surfaces of the outermost conductive layers (such as the third conductive layer 122a and the fourth conductive layer 122b), such as electroless nickel immersion gold (ENIG) process, electroless nickel / electroless palladium / immersion gold (ENEPIG) process, organic solderability preservative (OSP) process, to reduce adverse effects such as contamination and oxidation on the exposed conductive layers.

[0074] In some embodiments, vent holes V1 and V2 connected to the cavity CA are formed. For example, the vent hole V1 can be formed in the passivation layer 130a, the third insulating layer 120a, the first insulating layer 110a and the bonding substrate 106a of the first bonding structure 105a by using a mechanical drilling process or other suitable processes, and the vent hole V2 can be formed in the passivation layer 130b, the fourth insulating layer 120b, the second insulating layer 110b and the bonding substrate 106b of the second bonding structure 105b.

[0075] Based on the above, the fabrication of the substrate structure 10 can be roughly completed. Since the cavity CA of the substrate structure 10 is assembled in the opening OP of the core layer 101 through the first bonding structure 105a, the support structure 109, and the second bonding structure 105b, without using a low-flow film or pure glue to form the cavity, the material cost can be reduced, the flexibility in material selection can be increased, and it is easy to manufacture. In addition, the first bonding structure 105a and the second bonding structure 105b can be substantially flush with the first surface 101a and the second surface 101b of the core layer 101, providing good flatness of the board surface, which is beneficial to the subsequent fabrication of the insulating layer and the conductive layer.

[0076] In summary, the substrate structure of the present utility model has a cavity in its core structure, which can reduce the insertion loss of the circuits near the core structure, thereby improving the quality of signal transmission.

[0077] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present utility model, and are not intended to limit them; although the present utility model has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present utility model.

Claims

1. A substrate structure, characterized in that: include: A core structure, comprising a core layer and an opening penetrating the core layer, wherein the core layer has a first surface and a second surface opposite to the first surface, and the opening penetrating the first surface and the second surface of the core layer; a first bonding structure disposed in the opening and close to the first surface of the core layer; a second bonding structure disposed in the opening and close to the second surface of the core layer; A supporting structure, disposed in the opening and between the first engaging structure and the second engaging structure, wherein the supporting structure is a hollow structure; A first insulating layer, disposed on the first surface of the core layer and the first bonding structure; as well as A second insulating layer is disposed on the second surface of the core layer and the second bonding structure, The space surrounded by the first joining structure, the second joining structure and the supporting structure constitutes the cavity of the core structure.

2. The substrate structure according to claim 1, characterized in that: The first bonding structure and the second bonding structure each include: bonding substrates; A plurality of bumps are disposed on the sidewalls of the bonding substrate; and The conductive structure is disposed on the upper surface and / or the lower surface of the bonding substrate, wherein the upper surface of the bonding substrate is opposite to the lower surface, and the side wall of the bonding substrate is connected between the upper surface and the lower surface.

3. The substrate structure according to claim 2, characterized in that: The plurality of bumps are located between the bonding base and the sidewall of the opening.

4. The substrate structure according to claim 3, characterized in that: A plurality of bumps are in direct contact with the sidewalls of the opening.

5. The substrate structure according to claim 2, characterized in that: A gap is formed between the bonding base and the sidewall of the opening.

6. The substrate structure according to claim 5, characterized in that: The first insulating layer is also located in the gap between the bonding base of the first bonding structure and the sidewall of the opening, and the second insulating layer is also located in the gap between the bonding base of the second bonding structure and the sidewall of the opening.

7. The substrate structure according to claim 1, characterized in that: The support structure has an annular shape and is disposed along a side wall of the opening.

8. The substrate structure according to claim 7, characterized in that: A gap is formed between the support structure and the side wall of the opening.

9. The substrate structure according to claim 8, characterized in that: The first insulating layer and / or the second insulating layer is also located in the gap between the support structure and the sidewall of the opening.

10. The substrate structure according to claim 1, characterized in that: Also includes: An air guide hole passes through the first joint structure or the second joint structure, so that the cavity is connected with the external environment through the air guide hole.

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