Light emitting diode

Abstract

The utility model provides a light emitting diode. The light-emitting diode comprises a support, a light-emitting diode chip, a shading layer, a fluorescent colloid layer and a bulb. The light shielding layer arranged on the surface of the support surrounds the light emitting diode chip, and the fluorescent colloid layer covers the light shielding layer and the light emitting diode chip, so that the light shielding layer is tightly attached to the side face of the light emitting diode chip, light on the side face of the chip can be effectively shielded from overflowing, light is emitted from the front face, and uneven light of the LED is effectively avoided.

Description

Technical Field

[0001] The present disclosure relates to the field of light-emitting devices, and particularly to a light-emitting diode. Background Art

[0002] As an efficient and energy-saving lighting source, the light-emitting diode (LED) has been widely applied and developed in recent years and plays an important role in fields such as household lighting, commercial lighting, and automotive lighting. With the continuous expansion of LED applications, the requirements for the brightness and light efficiency of LEDs are also continuously increasing. In order to meet the market demand for higher brightness and better light effects, the LED packaging process is constantly innovating and improving.

[0003] The related art provides a light-emitting diode, including: a bracket, a light-emitting diode chip disposed on the bracket, a wire connecting the bracket and the light-emitting diode chip, and a ball head covering the bracket and the chip.

[0004] However, the light output of the light-emitting diode with the above packaging structure is uneven. Summary of the Utility Model

[0005] Embodiments of the present disclosure provide a light-emitting diode, which is beneficial to enhancing the light output efficiency of the light-emitting diode. The technical solution is as follows:

[0006] On the one hand, a light-emitting diode is provided, and the light-emitting diode includes:

[0007] a bracket, a light-emitting diode chip, a light-shielding layer, a fluorescent colloid layer, and a ball head;

[0008] The light-emitting diode chip is located on the surface of the bracket, the light-emitting diode chip is electrically connected to the bracket, the light-shielding layer is located on the surface of the bracket, and the light-shielding layer surrounds the light-emitting diode chip. The fluorescent colloid layer covers the surfaces of the light-shielding layer, the light-emitting diode chip, and the bracket, and the ball head covers the fluorescent colloid layer.

[0009] Optionally, the light-shielding layer is a white glue layer.

[0010] Optionally, the thickness of the light-shielding layer is less than 2 / 3 of the thickness of the light-emitting diode chip.

[0011] Optionally, the thickness of the light-shielding layer is 51-60 microns.

[0012] Optionally, the light-shielding layer is a white ink layer.

[0013] Optionally, the thickness of the light-shielding layer gradually decreases in the direction away from the light-emitting diode chip.

[0014] Optionally, the bracket includes a substrate, a first bracket plating layer, and a second bracket plating layer that are stacked in sequence;

[0015] The substrate is a ceramic substrate, the first bracket plating layer is a copper plating layer, and the second bracket plating layer is a silver plating layer.

[0016] Optionally, the surface of the bracket has a negative electrode region, a positive electrode region, and an insulating band located between the negative electrode region and the positive electrode region;

[0017] The N pole of the light-emitting diode chip is electrically connected to the negative electrode region, and the P pole of the light-emitting diode chip is electrically connected to the positive electrode region.

[0018] Optionally, the fluorescent colloid layer is a mixture layer of phosphor and silica gel.

[0019] Optionally, the phosphor is yttrium aluminum garnet phosphor or potassium fluorosilicate phosphor.

[0020] The beneficial effects brought by the technical solution provided by the embodiments of the present disclosure are as follows:

[0021] In the embodiments of the present disclosure, the light-shielding layer provided on the surface of the bracket surrounds the light-emitting diode chip, and the fluorescent colloid layer covers the light-shielding layer and the light-emitting diode chip, so that the light-shielding layer is closely attached to the side of the light-emitting diode chip, which can effectively block the light overflow from the side of the chip, making the light emit from the front, and effectively avoiding the uneven light of the LED. Description of the Drawings

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present disclosure. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0023] Figure 1 is a schematic diagram of a light-emitting diode provided by an embodiment of the present disclosure;

[0024] Figure 2 is a top view of a light-emitting diode provided by an embodiment of the present disclosure;

[0025] Figure 3 is a top view of a light-emitting diode provided by an embodiment of the present disclosure;

[0026] Figure 4 is a flowchart of a packaging method for a light-emitting diode provided by an embodiment of the present disclosure.

[0027] The reference numerals are as follows:

[0028] 101: Bracket; 102: Light-emitting diode chip; 103: Light-shielding layer; 104: Fluorescent colloid layer; 105: Ball head; 1: Negative electrode area; 2: Positive electrode area; 3: Insulating tape; 1001: Substrate; 1002: First bracket coating; 1003: Second bracket coating. Detailed implementation mode

[0029] To make the purpose, technical solution and advantages of the present disclosure clearer, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0030] Figure 1 is a schematic diagram of a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 1 , the light-emitting diode includes: a bracket 101, a light-emitting diode chip 102, a light-shielding layer 103, a fluorescent colloid layer 104 and a ball head 105.

[0031] Among them, the light-emitting diode chip 102 is located on the surface of the bracket 101, the light-emitting diode chip 102 is electrically connected to the bracket 101, the light-shielding layer 103 is located on the surface of the bracket 101, and the light-shielding layer 103 surrounds the light-emitting diode chip 102. The fluorescent colloid layer 104 covers the surfaces of the light-shielding layer 103, the light-emitting diode chip 102 and the bracket 101, and the ball head 105 covers the fluorescent colloid layer 104.

[0032] In the embodiment of the present disclosure, the light-shielding layer provided on the surface of the bracket surrounds the light-emitting diode chip, and the fluorescent colloid layer covers the light-shielding layer and the light-emitting diode chip, so that the light-shielding layer is closely attached to the side of the light-emitting diode chip, which can effectively block the light overflow from the side of the chip, making the light emit from the front and effectively avoiding the uneven light of the LED.

[0033] In one example, the light-shielding layer 103 can be a white glue layer, which has a good light-shielding effect and can reflect light, and has a good adhesion effect between the white glue layer and the bracket 101, the light-emitting diode chip 102 and the fluorescent colloid layer 104.

[0034] In the embodiment of the present disclosure, the thickness of the light-shielding layer 103 is less than 2 / 3 of the thickness of the light-emitting diode chip 102.

[0035] In this implementation manner, the above design of the thickness of the light-shielding layer does not completely cover the side wall of the light-emitting diode, and the upper half of the side wall is reserved for light emission. While avoiding light overflow from the side, the light-emitting angle is guaranteed, and the light-emitting efficiency of the light-emitting diode is guaranteed.

[0036] Exemplarily, the thickness of the light-emitting diode chip 102 is 300 microns, and the thickness of the light-shielding layer 103 is less than 200 microns.

[0037] For example, the thickness of the light-shielding layer 103 is 51-60 microns.

[0038] Table 1 shows the reflectivity comparison when the light-shielding layer has different thicknesses in the embodiments of the present disclosure. As shown in Table 1, when the thickness of the light-shielding layer is 51 microns, the reflectivity is as high as 99.2%.

[0039] Table 1

[0040]

[0041]

[0042] In other embodiments, the thickness of the light-shielding layer 103 may also be greater than or equal to 2 / 3 of the thickness of the light-emitting diode chip 102.

[0043] In another example, the light-shielding layer 103 may be a white ink layer. Using white ink is convenient for production and can achieve light-shielding and reflection effects.

[0044] In other examples, the light-shielding layer 103 may be a light-shielding layer 103 made of other materials.

[0045] Such as Figure 1 As shown, the thickness of the light-shielding layer 103 gradually decreases in the direction away from the light-emitting diode chip 102. That is, the light-shielding layer 103 adopts a ramp design, and this design method can make the fluorescent colloid layer 104 combine more closely with each structure.

[0046] In other examples, the thickness of the light-shielding layer 103 may also remain unchanged.

[0047] In the embodiments of the present disclosure, the fluorescent colloid layer 104 may be a mixture layer of phosphor and silica gel. The phosphor in the fluorescent colloid layer 104 can change the color of light to meet the different color light-emitting requirements of the light-emitting diode. Silica gel has good viscosity, flexibility and chemical stability, which can protect the light-emitting diode chip 102 and extend the service life of the light-emitting diode.

[0048] In one example, the phosphor may be yttrium aluminum garnet (YAG) phosphor, and the proportion of YAG phosphor in the fluorescent colloid layer 104 is 6% - 15%.

[0049] Exemplarily, the proportion of YAG phosphor in the fluorescent colloid layer 104 is 10%.

[0050] In another example, the phosphor may be potassium fluorosilicate (KSF) phosphor, and the proportion of KSF phosphor in the fluorescent colloid layer 104 is 25% - 46%.

[0051] In the embodiments of the present disclosure, the ball head 105 can be a silicone ball head. The silicone ball head has good adhesiveness, flexibility, and heat resistance, and can effectively reduce shock and moisture; at the same time, it has biocompatibility and is suitable for various environments, especially for the diode packaging connection with high requirements for reliability and stability. The transparency of the silicone ball head allows light to pass through, without affecting the luminous efficiency, and ensures the brightness and light quality of the light-emitting diode.

[0052] In the embodiments of the present disclosure, a light-shielding layer 103 with a height less than two-thirds of the height of the light-emitting diode chip 102 is coated on the surface of the bracket 101 around the light-emitting diode chip 102, and then a layer of fluorescent colloid layer 104 is sprayed. On the one hand, it can improve the adhesiveness of the ball head 105 to the bracket 101, enhance the airtightness of the product, and improve the anti-sulfuration ability of the product. On the other hand, the coverage of the fluorescent colloid layer 104 and the light-shielding layer 103 can also increase the reflectivity of the bracket 101 to the blue light generated by the light-emitting diode chip 102, effectively preventing the phenomenon of blue light leakage from the side of the light-emitting diode, thereby ensuring more uniform light color of the light-emitting diode.

[0053] In the embodiments of the present disclosure, the light-emitting diode chip 102 is a blue light chip.

[0054] In other implementation manners, the light-emitting diode chip 102 can also be a chip of other colors.

[0055] In a possible implementation manner of the present disclosure, the bracket 101 includes a substrate 1001, a first bracket plating layer 1002, and a second bracket plating layer 1003 that are stacked in sequence.

[0056] In another possible implementation manner of the present disclosure, the bracket 101 can only include the substrate 1001 and the first bracket plating layer 1002 located on the substrate 1001.

[0057] Exemplarily, the substrate 1001 can be a ceramic substrate, that is, an alumina substrate, and the ceramic substrate has high strength and hardness.

[0058] Exemplarily, the first bracket plating layer 1002 can be a copper plating layer. The high electrical conductivity of the copper plating layer enables the copper plating layer to provide excellent electrical conductivity. The copper plating layer also has good heat conductivity, which helps to dissipate heat, improve stability and lifespan.

[0059] Exemplarily, the second bracket plating layer 1003 can be a silver plating layer. The silver plating layer has excellent heat conductivity, which helps to dissipate heat. The silver plating layer also has good reflectivity, which improves the luminous efficiency.

[0060] Of course, the structures of the foregoing substrate 1001, first bracket plating layer 1002, and second bracket plating layer 1003 are only examples and are not limitations of the embodiments of the present disclosure.

[0061] Figure 2 This is a top view of a light-emitting diode provided by an embodiment of the present disclosure. Figure 2 The figure shows a top view of the package structure of the light-emitting diode before applying white glue, that is, a schematic diagram of the connection between the light-emitting diode chip 102 and the bracket 101. Refer to Figure 2 , the bracket 101 (the first bracket plating layer 1002 and the second bracket plating layer 1003) both include a negative electrode region 1 and a positive electrode region 2, and the insulated belt 3 is the part that separates the negative electrode region 1 and the positive electrode region 2 in the middle. The N pole of the light-emitting diode chip 102 is electrically connected to the negative electrode region 1, and the P pole of the light-emitting diode chip 102 is electrically connected to the positive electrode region 2.

[0062] Figure 3 This is a top view of a light-emitting diode provided by an embodiment of the present disclosure. Figure 3 The figure shows a top view of the package structure of the light-emitting diode after applying white glue. Refer to Figure 3 , the light-shielding layer 103 covers part of the negative electrode region 1, the positive electrode region 2, and the insulated belt 3 around the light-emitting diode chip 102 on the bracket 101.

[0063] Figure 4 This is a flowchart of a method for packaging a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 4 , the method steps include:

[0064] S11. Provide a bracket.

[0065] In the embodiment of the present disclosure, the bracket 101 includes a substrate 1001, a first bracket plating layer 1002, and a second bracket plating layer 1003 that are stacked in sequence.

[0066] In another possible implementation manner of the present disclosure, the bracket 101 may only include the substrate 1001 and the first bracket plating layer 1002 located on the substrate 1001.

[0067] Exemplarily, the substrate 1001 may be a ceramic substrate, that is, an alumina substrate, and the ceramic substrate has high strength and hardness.

[0068] Exemplarily, the first bracket plating layer 1002 may be a copper plating layer. The high electrical conductivity of the copper plating layer enables the copper plating layer to provide excellent electrical conductivity, and the copper plating layer also has good heat conductivity, which helps to dissipate heat, improve stability and lifespan.

[0069] Exemplarily, the second bracket plating layer 1003 may be a silver plating layer. The silver plating layer has excellent heat conductivity, which helps to dissipate heat, and the silver plating layer also has good reflectivity, which improves the light-emitting efficiency.

[0070] Of course, the structures of the foregoing substrate 1001, the first bracket plating layer 1002, and the second bracket plating layer 1003 are only examples and are not limitations on the embodiments of the present disclosure.

[0071] S12. Set the light-emitting diode chip on the bracket.

[0072] Exemplarily, use a flux to fix the light-emitting diode chip 102 on the bracket 101, and then electrically connect the P pole and the N pole of the light-emitting diode chip 102 to the positive and negative electrode regions in the bracket 101 respectively through an eutectic furnace.

[0073] S13. Form a light-shielding layer on the bottom surface of the bracket around the light-emitting diode chip.

[0074] In one example, the light-shielding layer 103 can be a white glue layer, which has a good light-shielding effect and a good adhesion effect with the bracket 101, the light-emitting diode chip 102, and the fluorescent colloid layer 104.

[0075] For example, use a piezoelectric valve glue spraying machine to spray white glue around the chip at the bottom of the bracket 101 to form the light-shielding layer 103, and the light-shielding layer 103 has a good connection tightness with the bracket 101.

[0076] In the embodiments of the present disclosure, the thickness of the light-shielding layer 103 is less than 2 / 3 of the thickness of the light-emitting diode chip 102.

[0077] In this implementation manner, the above design of the light-shielding layer thickness enables the light-shielding layer not to completely cover the side wall of the light-emitting diode, leaving the upper half of the side wall for light emission. While avoiding light spillage from the side, the light-emitting angle is ensured, and the light-emitting efficiency of the light-emitting diode is guaranteed.

[0078] Exemplarily, the thickness of the light-emitting diode chip 102 is 300 microns, and the thickness of the light-shielding layer 103 is less than 200 microns.

[0079] For example, the thickness of the light-shielding layer 103 is 51 - 60 microns.

[0080] In other embodiments, the thickness of the light-shielding layer 103 can also be greater than or equal to 2 / 3 of the thickness of the light-emitting diode chip 102.

[0081] In another example, the light-shielding layer 103 can be a white ink layer. Using white ink is convenient for production and can achieve light-shielding and reflection effects.

[0082] In other examples, the light-shielding layer 103 can be a light-shielding layer made of other materials.

[0083] S14. Coat the phosphor glue mixture onto the light-shielding layer and the light-emitting diode chip, and then bake and cure it to form a fluorescent colloid layer.

[0084] Exemplarily, the phosphor and silica gel are mixed in a certain proportion, stirred evenly using a vacuum mixer and evacuated, and the phosphor glue mixture is coated onto the bracket, light-shielding layer, and light-emitting diode chip using a dispensing machine, followed by baking and curing.

[0085] In one example, the phosphor can be a YAG phosphor, and the proportion of the YAG phosphor in the fluorescent colloid layer 104 is 6% - 15%.

[0086] Exemplarily, the proportion of the YAG phosphor in the fluorescent colloid layer 104 is 10%.

[0087] In another example, the phosphor can be a KSF phosphor, and the proportion of the KSF phosphor in the fluorescent colloid layer 104 is 25% - 46%.

[0088] S15. Make a ball head on the fluorescent colloid layer.

[0089] In the embodiments of the present disclosure, the ball head 105 can be a silica gel ball head.

[0090] In the embodiments of the present disclosure, the ball head 105 is made using a mold top mold.

[0091] Table 2 below shows the brightness comparison data of light-emitting diodes encapsulated by related technologies under different conditions. Table 3 below shows the brightness comparison data of light-emitting diodes encapsulated by the embodiments of the present disclosure under different conditions.

[0092] Among them, I is the current, with the unit of A; U is the voltage, with the unit of V; P is the power, with the unit of W; Φv is the luminous intensity, with the unit of lm; Φe is the radiant power, with the unit of W; PPE is the photosynthetic photon flux efficiency, with the unit of umol / s / W; PPF is the photosynthetic photon flux, with the unit of umol / s; the peak wavelength unit is nm; AVG is the mean value.

[0093] It can be seen from the comparison of Table 2 and Table 3 that the PPE of the light-emitting diodes encapsulated by the embodiments of the present disclosure is increased by about 5%.

[0094] The above are only optional embodiments of the present disclosure and are not intended to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present disclosure shall be included within the protection scope of the present disclosure.

[0095] Table 2

[0096]

[0097]

[0098]

[0099] Table 3

[0100]

[0101]

Claims

1. A light emitting diode, characterized in that: The light emitting diode comprises: A bracket (101), a light emitting diode chip (102), a light shielding layer (103), a fluorescent colloid layer (104) and a ball head (105); The light-emitting diode chip (102) is located on the surface of the bracket (101), the light-emitting diode chip (102) is electrically connected to the bracket (101), the light-shielding layer (103) is located on the surface of the bracket (101), and the light-shielding layer (103) surrounds the light-emitting diode chip (102), the fluorescent colloid layer (104) covers the light-shielding layer (103), the light-emitting diode chip (102) and the surface of the bracket (101), and the ball head (105) covers the fluorescent colloid layer (104).

2. The light emitting diode according to claim 1, characterized in that: The light shielding layer (103) is a white glue layer.

3. The light emitting diode according to claim 2, characterized in that: The thickness of the light shielding layer (103) is less than 2 / 3 of the thickness of the light emitting diode chip (102).

4. The light emitting diode according to claim 3, characterized in that: The thickness of the light shielding layer (103) is 51 to 60 micrometers.

5. The light emitting diode according to claim 1, characterized in that: The light shielding layer (103) is a white ink layer.

6. The light emitting diode according to any one of claims 1 to 5, characterized in that: The thickness of the light shielding layer (103) gradually decreases in a direction away from the light emitting diode chip (102).

7. The light emitting diode according to any one of claims 1 to 5, characterized in that: The support (101) comprises a substrate (1001), a first support coating (1002) and a second support coating (1003) which are stacked in sequence; The substrate (1001) is a ceramic substrate, the first bracket coating (1002) is a copper coating, and the second bracket coating (1003) is a silver coating.

8. The light emitting diode according to any one of claims 1 to 5, characterized in that: The surface of the support (101) has a negative electrode region (1), a positive electrode region (2), and an insulating band (3) located between the negative electrode region (1) and the positive electrode region (2); The N pole of the light-emitting diode chip (102) is electrically connected to the cathode region (1), and the P pole of the light-emitting diode chip (102) is electrically connected to the anode region (2).

9. The light emitting diode according to any one of claims 1 to 5, characterized in that: The fluorescent colloid layer (104) is a mixture layer of fluorescent powder and silica gel.

10. The light emitting diode according to claim 9, characterized in that: The fluorescent powder is yttrium aluminum garnet fluorescent powder or potassium fluorosilicate fluorescent powder.

Images