Chemical vapor deposition device

Abstract

The utility model discloses a chemical vapor deposition device which comprises a device main body, a cavity is formed in the device main body, a separator is arranged in the cavity, the separator divides the cavity into a reaction cavity and a buffer cavity which are arranged at an interval in a first direction and are communicated with each other, the device main body is also provided with an air inlet and an air outlet, and the air inlet and the air outlet are communicated with each other. The air inlet is communicated with the buffer cavity, and the air outlet is communicated with the reaction cavity. According to the chemical vapor deposition device disclosed by the utility model, the separator is arranged between the gas inlet and the reaction cavity, so that the temperature of the gas inlet is lower than that in the reaction cavity, and the probability that a deposition coating is generated at the gas inlet is reduced, on one hand, the reliability of the chemical vapor deposition device and the yield of produced products can be improved; on the other hand, the air inlet does not need to be replaced frequently in the production process, and production cost can be reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of chemical vapor deposition, and in particular to a chemical vapor deposition device. Background Art

[0002] CVD (Chemical Vapor Deposition) is a process of growing a coating on the surface of a solid material through high-temperature chemical reactions. By using this method, a coating with good high-temperature mechanical properties, good chemical stability, and corrosion resistance can be grown. In the related art, the temperature at the air inlet of the chemical vapor deposition device can reach the temperature of the chemical vapor deposition reaction, resulting in the formation of a deposition coating at the air inlet, blocking the air inlet and affecting the reliability of the chemical vapor deposition device. Summary of the Utility Model

[0003] The utility model aims to solve at least one of the technical problems existing in the prior art. For this reason, the utility model provides a chemical vapor deposition device with higher reliability.

[0004] The chemical vapor deposition device according to the utility model includes: a device main body, a cavity is formed in the device main body, a partition is arranged in the cavity, the partition divides the cavity into a reaction chamber and a buffer chamber which are arranged at intervals and communicated in a first direction, an air inlet and an air outlet are further arranged on the device main body, the air inlet is communicated with the buffer chamber, and the air outlet is communicated with the reaction chamber.

[0005] According to the chemical vapor deposition device of the utility model, by arranging a partition between the air inlet and the reaction chamber, the temperature of the air inlet can be lower than that in the reaction chamber, thereby reducing the probability of generating a deposition coating at the air inlet. On the one hand, the reliability of the chemical vapor deposition device and the yield rate of the produced products can be improved. On the other hand, the air inlet does not need to be frequently replaced during the production process, and the production cost can be reduced.

[0006] According to some embodiments of the utility model, the partition includes: a first partition, the first partition is opposite to the air inlet in the air inlet direction of the air inlet, and at least part of the circumference of the first partition is spaced apart from the inner wall of the cavity.

[0007] According to some embodiments of the present utility model, the partition member further includes: a second partition member, which is disposed on a side of the first partition member facing the reaction chamber. The first partition member and the second partition member are arranged at intervals in the first direction. A peripheral edge of the second partition member is connected to an inner wall of the cavity. An air vent hole penetrating the second partition member in the first direction is formed on the second partition member. In a projection plane perpendicular to the first direction, projections of the air vent hole and the air inlet are both located within a projection range of the first partition member.

[0008] According to some embodiments of the present utility model, the partition member is a heat insulation material member.

[0009] According to some embodiments of the present utility model, a heat exchange member is further provided at the air inlet, and the heat exchange member is used for cooling an air flow entering the air inlet.

[0010] According to some embodiments of the present utility model, the chemical vapor deposition apparatus further includes: a heating member, which is arranged outside the apparatus main body and is used for heating the reaction chamber.

[0011] According to some embodiments of the present utility model, the heating member is arranged to surround the apparatus main body, the heating member extends in the first direction and is located between two ends of the reaction chamber.

[0012] According to some embodiments of the present utility model, the outside of the apparatus main body is wrapped with a heat insulation member.

[0013] According to some embodiments of the present utility model, a support platform is provided in the reaction chamber, the support platform is used for placing a workpiece, and the support platform is rotatably connected to the apparatus main body.

[0014] According to some embodiments of the present utility model, the air inlet and the air outlet are respectively provided on two sides of the apparatus main body in the first direction.

[0015] Additional aspects and advantages of the present utility model will be given in part in the following description, become apparent in part from the following description, or be understood through practice of the present utility model. Description of the Drawings

[0016] Figure 1 is a cross-sectional view of a chemical vapor deposition apparatus according to an embodiment of the present utility model.

[0017] Reference Signs:

[0018] 100, chemical vapor deposition apparatus;

[0019] 10. Device main body; 11. Cavity; 111. Reaction chamber; 112. Buffer chamber; 12. Partition member; 121. First partition member; 122. Second partition member; 1221. Vent hole; 13. Inlet port; 14. Outlet port;

[0020] 20. Heat exchanger; 21. Inlet pipe;

[0021] 30. Heating element;

[0022] 40. Heat insulation member;

[0023] 50. Support platform. Detailed implementation manners

[0024] The embodiments of the present utility model will be described in detail below. The examples of the embodiments are shown in the drawings, in which the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions from beginning to end. The embodiments described below with reference to the drawings are exemplary and are intended to explain the present utility model, and should not be construed as a limitation to the present utility model.

[0025] Next, refer to Figure 1 to describe the chemical vapor deposition device 100 according to the embodiments of the present utility model.

[0026] As Figure 1 shown, the chemical vapor deposition device 100 according to the embodiments of the present utility model includes: a device main body 10.

[0027] Specifically, a cavity 11 is formed inside the device main body 10, and a partition member 12 is provided inside the cavity 11. The partition member 12 divides the cavity 11 into a reaction chamber 111 and a buffer chamber 112 that are arranged at intervals and communicated in a first direction (such as Figure 1 the left-right direction shown in the figure). An inlet port 13 and an outlet port 14 are further provided on the device main body 10. The inlet port 13 is communicated with the buffer chamber 112, and the outlet port 14 is communicated with the reaction chamber 111.

[0028] Among them, the reaction chamber 111 is used for performing chemical vapor deposition reactions. The reaction gas needs to be heated to a certain temperature to undergo chemical vapor deposition reactions.

[0029] During the production process, the workpiece to be coated with a coating is placed into the reaction chamber 111, and then the reaction chamber 111 is heated to make the temperature inside the reaction chamber 111 reach the temperature of the chemical vapor deposition reaction. Subsequently, the reaction gas is introduced through the inlet port 13. The reaction gas passes through the buffer chamber 112 and enters the reaction chamber 111. The reaction gas undergoes chemical vapor deposition reactions in the reaction chamber 111, and a coating is formed on the surface of the workpiece. The reacted gas is discharged from the reaction chamber 111 through the outlet port 14. Thus, the deposition of the coating on the surface of the workpiece by the chemical vapor deposition device 100 is completed.

[0030] During the operation of the chemical vapor deposition apparatus 100, the partition 12 can block the heating gas in the reaction chamber 111, reducing the heating gas flowing towards the air inlet 13. The buffer chamber 112 can buffer the heating gas, causing heat loss of the heating gas in the buffer chamber 112 and reducing the contact between the heating gas and the air inlet 13. At the same time, the partition 12 and the buffer chamber 112 can reduce the heat conduction from the reaction chamber towards the air inlet 13. Thus, the temperature at the air inlet 13 can be made lower than the temperature in the reaction chamber 111.

[0031] It can be understood by those skilled in the art that when the temperature of the air inlet 13 is lower than the reaction temperature in the reaction chamber 111, the probability of chemical vapor deposition occurring at the air inlet 13 is also relatively small. In this way, during the operation of the chemical vapor deposition apparatus, the probability of the air inlet 13 being blocked by the deposited coating is small, and the reaction gas can stably and continuously enter the reaction chamber 111, making the operation of the chemical vapor deposition apparatus more reliable. Moreover, a deposited coating can be stably formed on the workpiece, resulting in a high yield of the produced products. In addition, during the production process, there is no need to frequently replace the air inlet 13, which can reduce the production cost.

[0032] According to the chemical vapor deposition apparatus 100 of the embodiment of the present invention, by providing the partition 12 between the air inlet 13 and the reaction chamber 111, the temperature of the air inlet 13 can be made lower than the temperature in the reaction chamber 111, thereby reducing the probability of the air inlet 13 generating a deposited coating. On the one hand, the reliability of the chemical vapor deposition apparatus 100 and the yield of the produced products can be improved. On the other hand, there is no need to frequently replace the air inlet 13 during the production process, which can reduce the production cost.

[0033] In some embodiments of the present invention, as Figure 1 shown, the partition 12 includes: a first partition 121. The first partition 121 faces the air inlet 13 in the air inlet direction of the air inlet 13, and at least a part of the periphery of the first partition 121 is spaced apart from the inner wall of the cavity 11.

[0034] During the operation of the chemical vapor deposition apparatus 100, the reaction gas flowing into the air inlet 13 passes through the buffer chamber 112 and then flows into the reaction chamber 111 from between the periphery of the first partition 121 and the inner wall of the cavity 11. When the heating gas in the reaction chamber 111 flows towards the air inlet 13, the first partition 121 can block the heating gas, preventing the heating gas from directly flowing towards the air inlet 13. At the same time, the buffer chamber 112 can buffer the heating gas. Thus, the contact between the heating gas in the reaction chamber 111 and the air inlet 13 can be reduced, and the temperature when the heating gas contacts the air inlet 13 is relatively low, so that the temperature of the air inlet 13 is lower than the temperature in the reaction chamber 111.

[0035] In some embodiments of the present utility model, such as Figure 1 shown, the partition member 12 further includes: a second partition member 122, the second partition member 122 is disposed on a side of the first partition member 121 facing the reaction chamber 111, the first partition member 121 and the second partition member 122 are arranged at intervals in a first direction, a peripheral edge of the second partition member 122 is connected to an inner wall of the cavity 11, and a ventilation hole 1221 penetrating the second partition member 122 in the first direction is formed on the second partition member 122. In a projection plane perpendicular to the first direction, the projection of the ventilation hole 1221 and the projection of the air inlet 13 are both located within the projection range of the first partition member 121.

[0036] During the operation of the chemical vapor deposition apparatus 100, the reaction gas flowing in from the air inlet 13 first passes through the buffer chamber 112 and then between the peripheral edge of the first partition member 121 and the inner wall of the cavity 11, and then flows into the reaction chamber 111 through the ventilation hole 1221 on the second partition member 122. When the heating gas in the reaction chamber 111 flows toward the air inlet 13, both the first partition member 121 and the second partition member 122 can block the heating gas and prevent heat from being conducted from the reaction chamber 111 toward the air inlet 13 direction, thereby further reducing the heating gas in contact with the air inlet 13 and further ensuring that the temperature of the air inlet 13 is lower than the temperature in the reaction chamber 111, and improving the reliability of the chemical vapor deposition apparatus 100.

[0037] In some embodiments of the present utility model, the partition member 12 is a heat-insulating material member. In this way, the heat-insulating effect of the partition member 12 can be improved, thereby further ensuring that the temperature at the air inlet 13 is lower than the temperature in the reaction chamber 111 during the operation of the chemical vapor deposition apparatus 100, and reducing the probability of a deposition coating being generated at the air inlet 13.

[0038] In some embodiments of the present utility model, such as Figure 1 shown, a heat exchange member 20 is further provided at the air inlet 13, and the heat exchange member 20 is used to cool the air flow entering the air inlet 13. Thus, during the operation of the chemical vapor deposition apparatus 100, the heat exchange member 20 cools the intake air flow, and the intake air flow blowing over the inner wall of the air inlet 13 can reduce the temperature of the air inlet 13, thereby further ensuring that the temperature at the air inlet 13 is lower than the temperature in the reaction chamber 111 during the operation of the chemical vapor deposition apparatus 100, and reducing the probability of a deposition coating being generated at the air inlet 13. Among them, preferably, the heat exchange member 20 is a water-cooled pipe, the water-cooled pipe wraps the intake pipe 21 and extends into the air inlet 13, and the reaction gas enters the air inlet 13 from the intake pipe 21.

[0039] In some embodiments of the present utility model, such as Figure 1As shown, the chemical vapor deposition apparatus 100 further includes a heating member 30 disposed outside the apparatus main body 10 for heating the reaction chamber 111. During the operation of the chemical vapor deposition apparatus 100, the heating member 30 generates heat to heat the gas in the reaction chamber 111. By arranging the heating member 30 outside the apparatus main body 10, it is possible to avoid the formation of a deposition coating on the apparatus main body 10, which may affect the normal operation of the chemical vapor deposition apparatus 100.

[0040] In some embodiments of the present invention, as Figure 1 shown, the heating member 30 is arranged to surround the apparatus main body 10, extends in a first direction, and is located between the two ends of the reaction chamber 111. In this way, during the operation of the chemical vapor deposition apparatus 100, the heating of the reaction chamber 111 by the heating member 30 is more uniform, and since the heating member 30 is located between the two ends of the reaction chamber 111, the heat transfer from the heating member 30 to the air inlet 13 can be reduced, thereby further ensuring that the temperature at the air inlet 13 is lower than the temperature in the reaction chamber 111 during the operation of the chemical vapor deposition apparatus 100, and reducing the probability of a deposition coating forming at the air inlet 13.

[0041] In some embodiments of the present invention, as Figure 1 shown, the outside of the apparatus main body 10 is wrapped with a heat insulation member 40. By providing the heat insulation member 40, the heat loss during the operation of the chemical vapor deposition apparatus 100 can be reduced, thereby improving the efficiency of the chemical vapor deposition apparatus 100 and reducing the energy consumption of the chemical vapor deposition apparatus 100.

[0042] In some embodiments of the present invention, as Figure 1 shown, a support platform 50 is provided in the reaction chamber 111 for placing a workpiece, and the support platform 50 is rotatably connected to the apparatus main body 10. In this way, the deposition coating on the workpiece can be more evenly distributed, thereby further improving the yield rate of the chemical vapor deposition apparatus 100.

[0043] In some embodiments of the present invention, as Figure 1 shown, the air inlet 13 and the air outlet 14 are respectively provided on both sides of the apparatus main body 10 in the first direction. In this way, the air flow in and out of the apparatus main body 10 is relatively smooth, which can increase the speed of the air flow in and out of the apparatus main body 10, thereby improving the production efficiency of the chemical vapor deposition apparatus 100, and the flow path of the heating gas in the reaction chamber 111 is relatively long, which can enhance the reaction degree of the heating gas and improve the utilization rate of the reaction gas raw material.

[0044] In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present utility model.

[0045] In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present utility model, the meaning of "a plurality" is two or more, unless otherwise specifically defined.

[0046] In the present utility model, unless otherwise clearly specified and defined, the terms such as "installation", "connection", "connection", "fixation", etc. should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection, an electrical connection, or a communication connection; it may be directly connected, or indirectly connected through an intermediate medium, and may be the internal communication of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.

[0047] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present utility model. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0048] Although the embodiments of the present utility model have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and purposes of the present utility model, and the scope of the present utility model is defined by the claims and their equivalents.

Claims

1. A chemical vapor deposition device, characterized in that: include: A device body is provided with a cavity therein, a partition is provided in the cavity, the partition divides the cavity into a reaction chamber and a buffer chamber which are arranged at intervals and connected in a first direction, and an air inlet and an air outlet are also provided on the device body, the air inlet is connected to the buffer chamber, and the air outlet is connected to the reaction chamber.

2. The chemical vapor deposition device according to claim 1, characterized in that: The partition comprises: a first partition, the first partition is opposite to the air inlet in the air inlet direction of the air inlet, and at least a portion of the periphery of the first partition is spaced apart from the inner wall of the cavity.

3. The chemical vapor deposition device according to claim 2, characterized in that: The separator further includes: a second separator, the second separator is arranged on a side of the first separator facing the reaction chamber, and the first separator and the second separator are arranged at intervals in the first direction. The periphery of the second partition is connected to the inner wall of the cavity, and a ventilation hole is formed on the second partition and penetrates the second partition along the first direction. In the projection plane perpendicular to the first direction, the projection of the ventilation hole and the projection of the air inlet are both located within the projection range of the first partition.

4. The chemical vapor deposition device according to any one of claims 1 to 3, characterized in that: The partition is made of heat insulating material.

5. The chemical vapor deposition device according to any one of claims 1 to 3, characterized in that: A heat exchange element is also provided at the air inlet, and the heat exchange element is used to cool the airflow entering the air inlet.

6. The chemical vapor deposition device according to any one of claims 1 to 3, characterized in that: Also includes: A heating element is arranged outside the device body and is used to heat the reaction chamber.

7. The chemical vapor deposition device according to claim 6, characterized in that: The heating element is arranged around the device body, extends along a first direction, and is located between two ends of the reaction chamber.

8. The chemical vapor deposition device according to claim 6, characterized in that: The outer side of the device body is wrapped with a heat insulating member.

9. The chemical vapor deposition device according to any one of claims 1 to 3, characterized in that: A support platform is provided in the reaction chamber, the support platform is used to place workpieces, and the support platform is rotatably connected to the device body.

10. The chemical vapor deposition device according to any one of claims 1 to 3, characterized in that: The air inlet and the air outlet are respectively arranged on two sides of the device body in the first direction.

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