Microwave plasma chemical vapor deposition combined chamber
By designing a layered microwave plasma chemical vapor deposition combination chamber, the automatic loading and unloading and plasma uniformity are guaranteed, the problems of insufficient sealing performance and unevenness of the chamber of existing MPCVD equipment are solved, and the uniformity and stability of diamond finished products are improved.
Patent Information
- Application Number
- CN202421990963.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-16
- Publication Date
- 2025-06-24
- Estimated Expiration
- 2034-08-16
AI Technical Summary
During the operation of the chambers of existing MPCVD equipment, there are problems such as insufficient sealing performance, complicated operation, and uneven gas and temperature in the cavity, resulting in uneven diamond finished products, internal defects and large internal stresses.
A microwave plasma chemical vapor deposition combination chamber is designed, adopting a layered chamber structure, including an antenna chamber, a reaction chamber, a transmission chamber and a pumping chamber. Automatic loading and unloading is achieved through the top flange mounting surface and the bottom sealing flange mounting surface, and the uniformity of the plasma is ensured through reasonable gas passages and cooling structures.
Automatic loading and unloading in the chamber is achieved, the uniformity of plasma is ensured, the uniformity and stability of diamond products are improved, and the problem of uneven gas and temperature in the chamber is solved.
Smart Images
Figure CN223016969U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to a chamber, in particular to a microwave plasma chemical vapor deposition combined chamber, which is used in a microwave plasma chemical vapor deposition device for diamond growth and doping, and belongs to the field of microwave plasma chemical vapor deposition. Background Art
[0002] The term explanations are as follows: (1) Microwave: an alternating current energy signal, transmitted through a waveguide, and each waveguide has a certain characteristic impedance; (2) Microwave plasma chemical vapor deposition: Microwave plasma CVD (Microwave PCVD, MPCVD) is to introduce the microwave generated by a microwave generator into the reaction chamber through a waveguide via an isolator, and introduce a mixed gas of methane (CH4) and hydrogen (H2). Under the excitation of the microwave, glow discharge is generated in the reaction chamber, the molecules of the reaction gas are ionized to generate plasma, and a diamond film is deposited on the substrate; (3) Combined chamber: specifically refers to the microwave plasma reaction chamber in the device, and the chamber is divided into several chamber areas with different functions, which is called a combined chamber; (4) Substrate stage: a diamond growth carrier stage, which can be lifted to a specified height inside the combined chamber and bears the substrate for diamond growth.
[0003] In the prior art, in order to ensure the sealing performance, the chamber of the MPCVD device is generally set as an integrally welded chamber, and the chamber wall is provided with an air inlet, an air outlet, a cooling water inlet, a cooling water outlet, an observation window, etc. When the device starts to work and after the work is finished, it is necessary to manually open the bottom flange of the welded chamber and lower the workbench to load and unload materials. When both microwave input and reaction at a specified position are required and the workbench needs to be lifted and lowered, the operation becomes more cumbersome. In addition, when the positions of the air inlet and outlet of the chamber and the cooling channel are affected, the temperature and gas in the chamber will be uneven, and finally problems such as uneven finished products, internal defects, and large internal stress will occur in the produced products.
[0004] At present, the main methods for preparing diamond are the high temperature and high pressure method (HPHT) and the plasma chemical vapor deposition method (MPCVD). Among them, the MPCVD method is to decompose gas into carbon-containing active groups through high-temperature plasma, and deposit diamond on the substrate material under certain conditions. Because of its advantages such as non-polar discharge, less pollution, and high plasma density, the microwave plasma chemical vapor deposition (MPCVD) method is the most promising means for preparing high-quality, large-area diamond and doped diamond at present.
[0005] By adjusting the structure of the MPCVD deposition reaction chamber, a large-area and stable plasma sphere can be generated in the deposition chamber, which is beneficial to the deposition of diamond film in a large area and uniformly. Summary of the Utility Model
[0006] The purpose of the present utility model is to overcome the above-mentioned deficiencies existing in the prior art, and to provide a microwave plasma chemical vapor deposition combined chamber with a reasonable structural design, safe and reliable, capable of realizing automatic loading and unloading, ensuring the uniformity of plasma in the cavity structure, and improving the uniformity and stability of products.
[0007] The technical solution adopted by the present utility model to solve the above problems is: the microwave plasma chemical vapor deposition combined chamber includes a combined chamber, a top flange mounting surface and a bottom sealing flange mounting surface. The top flange mounting surface is arranged above the combined chamber, and the bottom sealing flange mounting surface is arranged below the combined chamber. It is characterized in that: the combined chamber includes an antenna chamber, a reaction chamber, a transmission chamber and a pumping chamber. The top flange mounting surface and the antenna chamber are of an integral structure. The upper end of the reaction chamber is welded to the antenna chamber as a whole. The lower end of the reaction chamber is fixedly connected to the pumping chamber by a flange. The side surface of the pumping chamber is welded to the transmission chamber as a whole.
[0008] Preferably, the top flange mounting surface of the present utility model is provided with a positioning and anti-microwave step having a positioning function and a function of preventing microwave leakage, and a plurality of flange mounting holes are evenly distributed in the circumferential direction.
[0009] Preferably, the internal shape of the antenna chamber of the present utility model is designed as a cylindrical cavity. A plurality of evenly distributed air cooling holes are arranged in the circumferential direction of the antenna chamber. The outer bottom circle is set as an inclined surface with a certain size. A quartz ring installation and sealing groove is arranged on the bottom surface, and the bottom is set as a stepped bottom welding surface.
[0010] Preferably, the reaction chamber of the present utility model includes a reaction chamber inner wall, a reaction chamber outer wall, an observation window, a positioning pin 1, a temperature measurement window, a cooling water outlet 1, a fastening flange, a mounting hole 1 and a cooling water inlet 1. A cavity is formed between the reaction chamber outer wall and the reaction chamber inner wall as a liquid cooling channel. Two cooling water inlets 1 are symmetrically arranged at the low end, and two cooling water outlets 1 are symmetrically arranged at the high end. The reaction chamber outer wall matches the fastening flange. 2-4 observation windows are evenly distributed in the circumferential direction at symmetrical positions on the side wall of the reaction chamber. A temperature measurement window is arranged on the reaction chamber outer wall. A plurality of evenly distributed mounting holes 1 are arranged on the lower end surface of the reaction chamber, and are fixedly connected to the pumping chamber by bolts. A positioning pin 1 is arranged at the connection interface.
[0011] Preferably, the transmission chamber of the present utility model is set as a rectangular channel. An end of the transmission chamber is provided with a mounting surface, and a butt joint mounting hole and a sealing surface 1 are arranged on the mounting surface.
[0012] Preferably, the air extraction chamber of the present utility model comprises an upper mounting flange, an O-ring seal groove, a shielding spring groove, a second mounting hole, a second positioning pin, a vacuum pumping interface, a reserved detection port, a second cooling water inlet, a pressure detection window, a vacuum degree detection window, and a second cooling water outlet. The upper end of the air extraction chamber is the upper mounting flange, which is flange-connected to the reaction chamber. The end face of the upper mounting flange is provided with a plurality of uniformly distributed second mounting holes, and is fastened to the reaction chamber by a bolt group; two second positioning pins are provided on the end face of the upper mounting flange, and an O-ring seal groove and a shielding spring groove are arranged inside the mounting holes of the upper mounting flange; a rectangular window is opened on the side of the air extraction chamber and welded to the transmission chamber as a whole, and a circular window is opened and welded with the vacuum pumping interface, and a reserved detection port is arranged on the side of the vacuum pumping interface; a pressure detection window and a vacuum degree detection window are arranged on the side wall of the cavity of the air extraction chamber, and two symmetrically distributed second cooling water inlets and two symmetrically distributed second cooling water outlets are arranged on the side wall of the air extraction chamber.
[0013] Preferably, a guiding surface is provided at the inner hole opening at the bottom of the mounting surface of the bottom sealing flange of the present utility model, the mounting surface is provided with an annular area as the second sealing surface, and a plurality of circumferentially uniformly distributed third mounting holes are arranged in the outer annular area of the mounting surface.
[0014] Preferably, a beryllium copper spring with microwave shielding function is installed in the shielding spring groove of the present utility model to achieve microwave shielding between the reaction chamber and prevent microwave leakage during operation.
[0015] Preferably, both the inner wall and the outer wall of the reaction chamber of the present utility model are made of high-temperature resistant and corrosion-resistant stainless steel metal materials.
[0016] Preferably, both the observation window and the temperature measurement window of the present utility model are made of high-temperature resistant glass transparent materials.
[0017] Compared with the prior art, the present utility model has the following advantages and effects: (1) The overall structure is reasonably designed, safe and reliable. A layered chamber is adopted, and a rectangular transmission chamber is connected to the side wall of the lower chamber, which can realize automatic loading and unloading; (2) By reasonably designing the gas path channel and the cooling structure, the problems of uneven gas and temperature in the cavity of the existing MPCVD equipment are solved, the uniformity of the plasma in the cavity structure is ensured, and the uniformity and stability of the product are improved. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Figure 1 is the overall structural schematic diagram of an embodiment of the present utility model.
[0019] Figure 2 is the three-dimensional structural schematic diagram of the antenna chamber in an embodiment of the present utility model.
[0020] Figure 3 is the sectional structural schematic diagram of the antenna chamber in an embodiment of the present utility model.
[0021] Figure 4 is Figure 3 The partial enlarged structural schematic diagram of part A in
[0022] Figure 5 is the structural schematic diagram of the reaction chamber in the embodiment of the present utility model.
[0023] Figure 6 is the structural schematic diagram of the transfer chamber and the pumping chamber in the embodiment of the present utility model.
[0024] Figure 7 is the structural schematic diagram of the bottom sealing flange mounting surface in the embodiment of the present utility model.
[0025] Figure 8 is Figure 7 the partial enlarged structural schematic diagram of part B in
[0026] Figure 9 is Figure 7 the partial enlarged structural schematic diagram of part C in
[0027] In the figure: the top flange mounting surface 1, the antenna chamber 2, the reaction chamber 3, the transfer chamber 4, the pumping chamber 5, the bottom sealing flange mounting surface 6; the positioning and anti-microwave step 11, the flange mounting hole 12; the air cooling hole 21, the inclined surface 22, the quartz ring mounting and sealing groove 23, the bottom welding surface 24; the inner wall of the reaction chamber 31, the outer wall of the reaction chamber 32, the observation window 33, the positioning pin 1 34, the temperature measurement window 35, the cooling water outlet 1 36, the fastening flange 37, the mounting hole 1 38, the cooling water inlet 1 39; the docking mounting hole 41, the mounting surface 42, the sealing surface 1 43, the upper mounting flange 51, the O-ring sealing groove 52, the shielding spring groove 53, the mounting hole 2 54, the positioning pin 2 55, the vacuum pumping interface 56, the reserved detection port 57, the cooling water inlet 2 58, the pressure detection window 59, the vacuum degree detection window 510, the cooling water outlet 2 511; the guiding surface 61, the sealing surface 2 62, the mounting hole 3 63. Detailed implementation manners
[0028] The present utility model will be further described in detail below in conjunction with the drawings and through embodiments. The following embodiments are explanations of the present utility model and the present utility model is not limited to the following embodiments.
[0029] Embodiment
[0030] Refer to Figures 1 to 9, the microwave plasma chemical vapor deposition combined chamber of this embodiment includes a combined chamber, a top flange mounting surface 1, and a bottom sealing flange mounting surface 6. The combined chamber includes an antenna chamber 2, a reaction chamber 3, a transfer chamber 4, and a pumping chamber 5. The top flange mounting surface 1 is arranged above the combined chamber, and the bottom sealing flange mounting surface 6 is arranged below the combined chamber. The top flange mounting surface 1 and the antenna chamber 2 are of an integral structure. The upper end of the reaction chamber 3 is welded to the antenna chamber 2 as a whole. The lower end of the reaction chamber 3 is tightly connected to the pumping chamber 5 by a flange. The side surface of the pumping chamber 5 is welded to the transfer chamber 4 as a whole.
[0031] The microwave plasma chemical vapor deposition combined chamber of this embodiment is used in a microwave plasma chemical vapor deposition device to realize the growth of homogeneous and heterogeneous structures of diamond materials, and can realize the automatic transfer of materials without being exposed to the atmospheric environment.
[0032] In this embodiment, the top flange mounting surface 1 and the antenna chamber 2 are designed as an integral structure. The mounting surface is provided with a positioning and anti-microwave step 11 with positioning function and anti-microwave leakage function, and a number of flange mounting holes 12 are evenly distributed in the circumferential direction. The distance between the flange mounting holes 12 is not greater than 100 mm to ensure that the top flange is firmly and reliably fastened to the antenna chamber 2.
[0033] In this embodiment, the antenna chamber 2 includes air cooling holes 21, an inclined surface 22, a quartz ring mounting and sealing groove 23, and a bottom welding surface 24. The internal shape of the antenna chamber 2 is designed as a cylindrical cavity. The microwave coaxial antenna enters from the top flange, with the top end being the top flange mounting surface 1 and the bottom being welded to the reaction chamber 3 as an integral structure. A number of evenly distributed air cooling holes 21 are arranged in the circumferential direction of the antenna chamber 2, and air cooling is adopted in this chamber after the microwave enters. The bottom of the outer circle is set as an inclined surface 22 with a certain size, and a quartz ring mounting and sealing groove 23 is arranged on the bottom surface. The mounting groove plays a positioning role, and a non-metallic elastic O-ring made of nitrile or fluororubber but not limited to these two materials is installed in the O-ring groove. The bottom is set as a stepped bottom welding surface 24 to facilitate welding with the reaction chamber 3.
[0034] In this embodiment, the reaction chamber 3 includes an inner reaction chamber wall 31, an outer reaction chamber wall 32, an observation window 33, a positioning pin 34, a temperature measurement window 35, a cooling water outlet 36, a fastening flange 37, a mounting hole 38, and a cooling water inlet 39. It is the main reaction chamber 3 for diamond growth. The substrate stage for diamond growth rises from the bottom into this chamber, and diamond growth is completed on the substrate stage. The upper end of the reaction chamber 3 is welded to the antenna chamber 2 as a whole, and the lower end is fixedly connected to the pumping chamber 5 by a flange. The inner reaction chamber wall 31 is made of high-temperature and corrosion-resistant stainless steel; the outer reaction chamber wall 32 is also made of high-temperature and corrosion-resistant stainless steel, forming a cavity with the inner reaction chamber wall 31 as a liquid cooling channel. Pure water can be passed through the cavity to cool the chamber wall; the outer reaction chamber wall 32 matches the fastening flange 37. At symmetric positions on the side wall of the reaction chamber 3, 2-4 observation windows 33 are arranged evenly in the circumferential direction. To ensure its sealing performance, the window uses a CF high-vacuum stainless steel flange. To ensure its perspective function, the window uses a transparent material such as high-temperature resistant glass; a temperature measurement window 35 is also provided on the chamber wall, which also uses a CF high-vacuum stainless steel flange and a high-temperature resistant glass window, facilitating the observation of diamond growth and the shape of the plasma group in the reaction chamber; in addition, a liquid cooling channel is formed between the inner reaction chamber wall 31 and the outer reaction chamber wall 32. Two cooling water inlets 39 are symmetrically arranged at the lower end, and two cooling water outlets 36 are symmetrically arranged at the upper end, ensuring that the cooling water flows from bottom to top in the liquid cooling channel, ensuring reliable cooling and uniformity of the chamber. A number of evenly distributed mounting holes 38 are arranged on the lower end surface of the reaction chamber 3, and it is fixedly connected to the pumping chamber 5 by bolts. A positioning pin 34 is provided at the connection interface, facilitating guiding and positioning during installation.
[0035] In this embodiment, the transfer chamber 4 is the feeding and discharging channel for the materials on the material stage, and is set as a rectangular channel to facilitate the entry and exit of the end of the manipulator. An installation surface 42 is provided at the end of the transfer chamber 4, which is docked with the high-vacuum valve. The installation surface 42 is provided with docking installation holes 41 and a sealing surface 43 to ensure reliable sealing when docked with the high-vacuum valve; through the automatic control of the opening and closing of the high-vacuum valve, the opening and closing of the transfer chamber 4 are automatically controlled.
[0036] In this embodiment, for the evacuation chamber 5, when the combined chamber starts to operate, it is first necessary to evacuate the reaction chamber 3, the transfer chamber 4, and the interior of the evacuation chamber 5 of the combined chamber. The evacuation interface 56 is provided in the evacuation chamber 5. Among them, the upper end of the evacuation chamber 5 is the upper mounting flange 51, which is flange-connected to the reaction chamber 3. A number of uniformly distributed second mounting holes 54 are provided on the end face 51 of the upper mounting flange, and a bolt group is used to fasten it to the reaction chamber 3; to ensure the coaxiality between the two chambers and facilitate the positioning during the installation of the two chambers, two second positioning pins 55 are provided on the end face 51 of the upper mounting flange, and the positioning during the installation of the cavity is achieved through the second positioning pins 55. Inside the mounting holes of the upper mounting flange 51, an O-ring seal groove 52 is also provided to achieve vacuum sealing with the reaction chamber 3; in addition, a shielding spring groove 53 is provided, and a shielding spring such as a beryllium copper spring that has a microwave shielding function can be installed in the shielding spring groove 53 to achieve microwave shielding with the reaction chamber 3 and prevent microwave leakage during operation.
[0037] In this embodiment, a rectangular window is opened on the side of the evacuation chamber 5 and welded to the transfer chamber 4 to ensure the sealing performance between the cavities; a circular window is opened and welded with the evacuation interface 56, and the pipeline is connected by a metal fastening method, and the other end is connected to a mechanical pump for evacuation; a reserved detection port 57 is provided on the side of the evacuation interface 56 to facilitate the detection of indicators such as the pressure at the evacuation port. In addition, a pressure detection window 59 is provided on the side wall of the cavity, and it is tightly connected to a pressure sensor by an O-ring for real-time feedback of the cavity pressure signal; a vacuum degree detection window 510 is provided, and it is tightly connected to a vacuum degree detector by an O-ring for real-time monitoring of indicators such as the vacuum degree in the cavity. In addition, to ensure that the temperature of the side wall of this evacuation chamber 5 is within a certain range, a second cooling water inlet 58 is provided, with two symmetrically distributed ones, and a second cooling water outlet 511 is provided, with two symmetrically distributed ones, that is, the lower-end inlet - upper-end outlet method and the bilateral inlet - bilateral outlet method are used to ensure the uniformity of the cavity wall temperature.
[0038] In this embodiment, on the bottom sealing flange mounting surface 6, a guiding surface 61 is provided at the inner hole of the bottom for guiding the rise of the central substrate stage of the combined cavity; an annular area is provided on the mounting surface as the second sealing surface 62, and the second sealing surface 62 must ensure high flatness and low roughness, such as being polished along the grain or finely processed to a surface roughness of less than 0.4um, and cooperating with the O-ring on the bottom flange to achieve the sealing function. A number of circumferentially uniformly distributed third mounting holes 63 are provided in the outer annular area of the mounting surface for fixing the combined cavity to the mounting panel.
[0039] This embodiment of the combined chamber is used in a microwave plasma chemical vapor deposition device, which is a reaction device for producing diamond through a chemical / physical process (CVD (chemical vapor deposition)), and this process is carried out at a temperature of 600 - 1300°C and a pressure of 1 - 40 kPa.
[0040] The working process of this equipment is as follows: substrate loading → evacuation of the reaction chamber → gas filling of the chamber (process gas), microwave heating → reaching the process pressure → heating (induction) to reach the process temperature → growth → cooling → recompression of the chamber → substrate unloading.
[0041] The working process of the combined chamber in this embodiment in the equipment is as follows:
[0042] (S1) Before starting work, the transfer chamber 4 is connected and sealed with the high-vacuum valve, the top flange mounting surface 1 is mounted and sealed with the top chamber cover, the bottom sealing flange mounting surface 6 is sealed with the bottom sealing flange, and all other electrical, gas, liquid and other pipeline interfaces are connected.
[0043] (S2) First, the diamond growth substrate (substrate) is sent into the deposition stage carrier by the manipulator through the transfer chamber 4, and then the deposition stage carrier is raised to the designated position inside the combined chamber.
[0044] (S3) The evacuation pipeline starts to evacuate to make the vacuum degree reach a certain value.
[0045] (S4) Open the process gas channel and inject the process gas into the reaction chamber 3; transmit microwaves into the cavity through the antenna chamber 2.
[0046] (S5) When the process gas reaches the established pressure and the microwave heating (induction) reaches the process temperature, diamond growth can start.
[0047] (S6) After the diamond growth is completed, turn off the process gas and the microwave power supply, and the liquid cooling continues to work to provide cooling for the combined chamber;
[0048] (S7) When it is cooled below 300 °C, inject inert gases such as argon into the cavity. After reaching the established pressure, open the high-vacuum valve connected to the transfer chamber 4, and the manipulator enters from the transfer chamber 4 to take away the substrate and the grown diamond wafer.
[0049] Through the above description, those skilled in the art can implement it.
[0050] In addition, it should be noted that for the specific embodiments described in this specification, the shapes and names of their parts and components can be different. The above content described in this specification is only an example of the structure of the present invention. Any equivalent changes or simple changes made according to the structure, features and principles of the present invention's patent concept are included in the protection scope of the present invention's patent. Those skilled in the technical field to which the present invention belongs can make various modifications, supplements or use similar methods to replace the specific embodiments described, as long as they do not deviate from the structure of the present invention or exceed the scope defined by this claim book, they should fall within the protection scope of the present invention.
Claims
1. A microwave plasma chemical vapor deposition combined chamber, comprising a combined chamber, a top flange mounting surface (1) and a bottom sealing flange mounting surface (6), wherein the top flange mounting surface (1) is arranged above the combined chamber, and the bottom sealing flange mounting surface (6) is arranged below the combined chamber, characterized in that: The combined chamber comprises an antenna chamber (2), a reaction chamber (3), a transmission chamber (4) and an exhaust chamber (5); the top flange mounting surface (1) and the antenna chamber (2) are an integral structure; the upper end of the reaction chamber (3) and the antenna chamber (2) are welded together; the lower end of the reaction chamber (3) and the exhaust chamber (5) are connected and fastened by a flange; and the side of the exhaust chamber (5) and the transmission chamber (4) are welded together.
2. The microwave plasma chemical vapor deposition combined chamber according to claim 1, characterized in that: The top flange mounting surface (1) is provided with a positioning and microwave-proof step (11) having a positioning function and a microwave leakage prevention function, and a plurality of flange mounting holes (12) are evenly distributed in the circumferential direction.
3. The microwave plasma chemical vapor deposition combined chamber according to claim 1, characterized in that: The antenna chamber (2) is designed to have an internal shape of a cylindrical cavity. The antenna chamber (2) is provided with a plurality of evenly distributed air heat dissipation holes (21) in the circumferential direction. The outer bottom of the antenna chamber (2) is provided with an inclined surface (22) of a certain size. The bottom surface is provided with a quartz ring mounting sealing groove (23). The bottom is provided with a stepped bottom welding surface (24).
4. The microwave plasma chemical vapor deposition combined chamber according to claim 1, characterized in that: The reaction chamber (3) comprises a reaction chamber inner wall (31), a reaction chamber outer wall (32), an observation window (33), a positioning pin (34), a temperature measuring window (35), a cooling water outlet (36), a fastening flange (37), a mounting hole (38) and a cooling water inlet (39); a cavity is formed between the reaction chamber outer wall (32) and the reaction chamber inner wall (31) as a liquid cooling channel; two cooling water inlets (39) are symmetrically arranged at the lower end; and two cooling water outlets (36) are symmetrically arranged at the upper end; the reaction chamber outer wall (32) matches the fastening flange (37); 2 to 4 observation windows (33) are symmetrically arranged at the side wall of the reaction chamber (3) and are evenly distributed in the circumferential direction; and a temperature measuring window (35) is arranged on the reaction chamber outer wall (32); a plurality of evenly distributed mounting holes (38) are arranged on the lower end surface of the reaction chamber (3), and the reaction chamber is fastened and connected to the exhaust chamber (5) by bolts; and a positioning pin (34) is arranged at the connection interface.
5. The microwave plasma chemical vapor deposition combined chamber according to claim 1, characterized in that: The transmission chamber (4) is configured as a rectangular channel, and a mounting surface (42) is provided at the end of the transmission chamber (4), and a docking mounting hole (41) and a sealing surface 1 (43) are provided on the mounting surface (42).
6. The microwave plasma chemical vapor deposition combined chamber according to claim 1, characterized in that: The vacuum chamber (5) comprises an upper mounting flange (51), an O-ring sealing groove (52), a shielding spring groove (53), a second mounting hole (54), a second positioning pin (55), a vacuum extraction interface (56), a reserved detection port (57), a second cooling water inlet (58), a pressure detection window (59), a vacuum degree detection window (510) and a second cooling water outlet (511). The upper end of the vacuum chamber (5) is an upper mounting flange (51), which is connected to the reaction chamber (3) by a flange. The end surface of the upper mounting flange (51) is provided with a plurality of evenly distributed second mounting holes (54), which are fastened to the reaction chamber (3) by a bolt group. The upper mounting flange (51) 51) end surface is provided with two locating pins (55), and the inner side of the mounting hole of the upper mounting flange (51) is provided with an O-ring sealing groove (52) and a shielding spring groove (53); a rectangular window is opened on the side of the vacuum chamber (5) and welded to the transmission chamber (4) as a whole, and a circular window is opened to weld a vacuum interface (56), and a reserved detection port (57) is provided on the side of the vacuum interface (56); a pressure detection window (59) and a vacuum degree detection window (510) are provided on the side wall of the cavity of the vacuum chamber (5), and two symmetrically distributed cooling water inlets (58) and two symmetrically distributed cooling water outlets (511) are provided on the side wall of the vacuum chamber (5).
7. The microwave plasma chemical vapor deposition combined chamber according to claim 1, characterized in that: The bottom inner opening of the bottom sealing flange mounting surface (6) is provided with a guide surface (61), the mounting surface is provided with an annular area as a second sealing surface (62), and the outer annular area of the mounting surface is provided with a plurality of mounting holes (63) evenly distributed in the circumferential direction.
8. The microwave plasma chemical vapor deposition combined chamber according to claim 6, characterized in that: A beryllium copper spring with a microwave shielding function is installed in the shielding spring groove (53), thereby achieving microwave shielding between the spring and the reaction chamber (3).
9. The microwave plasma chemical vapor deposition combined chamber according to claim 4, characterized in that: The reaction chamber inner wall (31) and the reaction chamber outer wall (32) are both made of high temperature resistant and corrosion resistant stainless steel metal material.
10. The microwave plasma chemical vapor deposition combined chamber according to claim 4, characterized in that: The observation window (33) and the temperature measuring window (35) are both made of high temperature resistant transparent glass.