LED chip and lighting equipment

Abstract

The utility model provides an LED chip and lighting equipment, and relates to the technical field of semiconductors. Each of the electrode pads and the electrode fingers is composed of a reflective electrode layer and an electrode layer, the first reflective electrode layer can improve the light reflectivity of the electrode fingers, and the second reflective electrode layer can improve the light reflectivity of the electrode pads, so that the purpose of improving the luminous efficiency of the LED chip is achieved. The first electrode layer and the second electrode layer can be understood as electrode layers of a conventional LED chip, the first electrode layer covers the first reflection electrode layer, and the second electrode layer covers the second reflection electrode layer, so that the reflection electrode layers and the epitaxial layer can be prevented from peeling off; and the second electrode layer is also in contact with the bump structure of the epitaxial layer, and the contact stability of the part is relatively higher than the contact stability of the second electrode layer and the second reflection electrode layer, so that peeling between the second electrode layer and the second reflection electrode layer can be avoided, and the stability of the electrode structure is comprehensively improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and particularly to an LED chip and a lighting device. Background Art

[0002] With the gradual development of LEDs (Light Emitting Diodes), LED lighting has completely replaced traditional lighting sources. Keeping up with the pace of technological innovation and the continuous innovation of intelligent manufacturing in terms of scale, automation, and digitization, the current LED market competition is particularly fierce, and each LED chip factory pursues LED chips with higher luminous efficiency.

[0003] In some current existing technologies, the electrode pads of LED chips adopt high-reflection electrode forms such as Al, Ag, or DBR to improve the light reflectivity of the electrode pad area, so as to achieve the purpose of improving the luminous efficiency of the LED chip.

[0004] However, for the electrode pads with high-reflection electrode forms such as Al, Ag, or DBR structures, the fixing effect with the epitaxial layer is poor, and the phenomenon of electrode pad peeling is likely to occur, affecting the structural stability of the LED chip. Summary of the Utility Model

[0005] In view of the above problems, this application provides an LED chip and a lighting device, which improve the luminous efficiency of the LED chip and do not have the phenomenon of electrode pad peeling. The specific solutions are as follows:

[0006] In the first aspect of this application, an LED chip is provided, and the LED chip includes:

[0007] A substrate;

[0008] An epitaxial layer located on one side of the substrate, and the epitaxial layer includes an N-type semiconductor layer, a multi-quantum well layer, and a P-type semiconductor layer that are sequentially stacked in a first direction; the first direction is perpendicular to the plane where the substrate is located and points from the substrate to the epitaxial layer;

[0009] An electrode structure, the electrode structure includes an N electrode pad electrically connected to the N-type semiconductor layer, and a P electrode pad electrically connected to the P-type semiconductor layer; at least one of the N electrode pad and the P electrode pad further includes electrode fingers extending outward based on the electrode pad;

[0010] The epitaxial layer has a patterned film layer for setting the electrode structure, and the patterned film layer includes an electrode pad patterning area and an electrode finger patterning area;

[0011] The electrode fingers are located within the electrode finger patterning region. The electrode fingers include a first reflective electrode layer and a first electrode layer that are stacked in the first direction, and the first electrode layer completely covers at least the first reflective electrode layer.

[0012] There is a raised structure within the electrode pad patterning region, and the raised structure and the patterned film layer are an integral structure.

[0013] The electrode pads are located within the electrode pad patterning region. The electrode pads include a second reflective electrode layer and a second electrode layer. In the first direction, the thickness of the second reflective electrode layer is less than or equal to the height of the raised structure, and the second electrode layer completely covers at least the second reflective electrode layer.

[0014] Preferably, in the above LED chip, the first electrode layer and the second electrode layer are an integrally formed single electrode layer.

[0015] Preferably, in the above LED chip, the first reflective electrode layer is a combination of one or more of an Al material layer, an Ag material layer, and a DBR layer, and / or the second reflective electrode layer is a combination of one or more of an Al material layer, an Ag material layer, and a DBR layer.

[0016] Preferably, in the above LED chip, the material of the first electrode layer is a Cr material or a Ni material, and / or the material of the second electrode layer is a Cr material or a Ni material.

[0017] Preferably, in the above LED chip, the thickness range of the first reflective electrode layer is 0.2 μm - 0.5 μm, including the end values, and / or the thickness range of the second reflective electrode layer is 0.2 μm - 0.5 μm, including the end values.

[0018] The second aspect of the present application provides a method for manufacturing an LED chip. The method for manufacturing the LED chip includes:

[0019] Providing a substrate;

[0020] Forming an epitaxial layer on one side of the substrate. The epitaxial layer includes an N-type semiconductor layer, a multi-quantum well layer, and a P-type semiconductor layer that are sequentially stacked in the first direction. The first direction is perpendicular to the plane of the substrate and points from the substrate to the epitaxial layer.

[0021] Processing the epitaxial layer to make the epitaxial layer have a patterned film layer for setting the electrode structure. The patterned film layer includes an electrode pad patterning region and an electrode finger patterning region. There is a raised structure within the electrode pad patterning region, and the raised structure and the patterned film layer are an integral structure.

[0022] Fabricate an electrode structure, the electrode structure including an N - electrode pad electrically connected to the N - type semiconductor layer and a P - electrode pad electrically connected to the P - type semiconductor layer; at least one of the N - electrode pad and the P - electrode pad further includes electrode fingers extending outward based on the electrode pad; the electrode fingers are located within the electrode finger patterning region, the electrode fingers including a first reflective electrode layer and a first electrode layer stacked in the first direction, the first electrode layer at least completely covering the first reflective electrode layer; the electrode pad is located within the electrode pad patterning region, the electrode pad including a second reflective electrode layer and a second electrode layer; in the first direction, the thickness of the second reflective electrode layer is less than or equal to the height of the protruding structure, and the second electrode layer at least completely covers the second reflective electrode layer.

[0023] Preferably, in the above - mentioned method for fabricating an LED chip, the first electrode layer and the second electrode layer are an integrally formed single - layer electrode layer, and the fabricating of the electrode structure includes:

[0024] Perform a single film evaporation to form a single - layer electrode layer, the electrode layer at least completely covering the first reflective electrode layer and at least completely covering the second reflective electrode layer.

[0025] Preferably, in the above - mentioned method for fabricating an LED chip, when the material of the reflective electrode layer is Al material and contacts the GaN layer, before forming the reflective electrode layer, the method for fabricating the LED chip further includes:

[0026] Perform SiCl4 ion implantation on the target region of the GaN layer to adjust the surface doping content of the target region; the target region is the contact region between the GaN layer and the reflective electrode layer.

[0027] Preferably, in the above - mentioned method for fabricating an LED chip, when the material of the reflective electrode layer is Al material and contacts the ITO layer, after forming the reflective electrode layer, the method for fabricating the LED chip further includes:

[0028] Perform a high - temperature alloy treatment on the reflective electrode layer.

[0029] The third aspect of the present application provides a lighting device, the lighting device including the LED chip according to any one of the above.

[0030] With the above technical solution, the present application provides an LED chip and a lighting device. Both the electrode pad and the electrode finger are composed of two film layers, namely a reflective electrode layer and an electrode layer. The first reflective electrode layer can improve the light reflectivity at the electrode finger, and the second reflective electrode layer can improve the light reflectivity at the electrode pad, thereby achieving the purpose of improving the light-emitting efficiency of the LED chip. The first electrode layer and the second electrode layer can be understood as the electrode layers of a conventional LED chip. By covering the first reflective electrode layer with the first electrode layer and covering the second reflective electrode layer with the second electrode layer, the peeling of the reflective electrode layer and the epitaxial layer can be avoided; and the second electrode layer also contacts the convex structure of the epitaxial layer itself, which is equivalent to the contact mode between the electrode layer of a conventional LED chip and the film layer of the epitaxial layer. The contact stability of this part is relatively higher than the contact stability between the second electrode layer and the second reflective electrode layer, and the peeling between the second electrode layer and the second reflective electrode layer can be avoided, thereby comprehensively improving the stability of the electrode structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In combination with the accompanying drawings and with reference to the following specific embodiments, the above and other features, advantages and aspects of the various embodiments of the present disclosure will become more apparent. Throughout the drawings, the same or similar reference numerals represent the same or similar elements. It should be understood that the drawings are schematic and the original components and elements are not necessarily drawn to scale.

[0032] Figure 1 It is a partial structural schematic diagram of an LED chip provided by an embodiment of the present invention;

[0033] Figure 2 It is a partial structural schematic diagram of another LED chip provided by an embodiment of the present invention;

[0034] Figure 3 It is a partial structural schematic diagram of yet another LED chip provided by an embodiment of the present invention;

[0035] Figure 4 It is a partial structural schematic diagram of yet another LED chip provided by an embodiment of the present invention;

[0036] Figure 5 It is a top view structural schematic diagram of an LED chip provided by an embodiment of the present invention;

[0037] Figure 6 It is a flow schematic diagram of a preparation method of an LED chip provided by an embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0038] The embodiments of the present application will be described below with reference to the accompanying drawings in the embodiments of the present application. The terms used in the embodiments of the present application are only for explaining the specific embodiments of the present application, and are not intended to limit the present application. As known to those of ordinary skill in the art, with the development of technology and the emergence of new scenarios, the technical solutions provided by the embodiments of the present application are also applicable to similar technical problems. It should be noted that the orientation terms in the present utility model are based on the relative positional relationship shown in the drawings and cannot be used as an absolute limitation of the present application.

[0039] In order to make the above objects, features, and advantages of the present utility model more obvious and understandable, the present utility model will be further described in detail below with reference to the drawings and specific embodiments.

[0040] Reference Figure 1 , Figure 1 is a partial structural schematic diagram of an LED chip provided by an embodiment of the present utility model. The LED chip provided by the embodiment of the present utility model includes: a substrate 11.

[0041] An epitaxial layer located on one side of the substrate 11, the epitaxial layer including an N-type semiconductor layer 12, a multi-quantum well layer 13, and a P-type semiconductor layer 14 that are sequentially stacked in a first direction; the first direction is perpendicular to the plane where the substrate 11 is located and points from the substrate 11 to the epitaxial layer.

[0042] An electrode structure, the electrode structure including an N electrode pad 15 electrically connected to the N-type semiconductor layer 12 and a P electrode pad 16 electrically connected to the P-type semiconductor layer 14.

[0043] It should be noted that Figure 1 only takes the contact between the N electrode pad 15 and the N-type semiconductor layer 12 as an example for illustration, and takes the contact between the P electrode pad 16 and the P-type semiconductor layer 14 as an example for illustration. Obviously, the N electrode pad 15 can also be electrically connected to the N-type semiconductor layer 12 through some other functional film layers, and the P electrode pad 16 can also be electrically connected to the P-type semiconductor layer 14 through some other functional film layers. In other words, as long as it is ensured that the N electrode pad 15 is electrically connected to the N-type semiconductor layer 12, the relative positional relationship between the two is not strictly limited; similarly, as long as it is ensured that the P electrode pad 16 is electrically connected to the P-type semiconductor layer 14, the relative positional relationship between the two is not strictly limited.

[0044] Reference Figure 2 , Figure 2 is a partial structural schematic diagram of another LED chip provided by an embodiment of the present utility model. Refer to Figure 3 , Figure 3 is a partial structural schematic diagram of yet another LED chip provided by an embodiment of the present utility model. Refer to Figure 4 ,Figure 4 This is a partial structural schematic diagram of another LED chip provided by an embodiment of the present invention. In the LED chip provided by the embodiment of the present invention, at least one of the N electrode pad 15 and the P electrode pad 16 further includes electrode fingers extending outward based on the electrode pad.

[0045] As Figure 2 and Figure 4 shown, the N electrode pad 15 has N electrode fingers 151 extending outward based on the N electrode pad 15, and the P electrode pad 16 has P electrode fingers 161 extending outward based on the P electrode pad 16. Among them Figure 2 the electrode fingers shown are in the form of discontinuous electrode fingers, Figure 4 the electrode fingers shown are in the form of continuous electrode fingers.

[0046] As Figure 3 shown, the P electrode pad 16 has P electrode fingers 161 extending outward based on the P electrode pad 16, while the N electrode pad 15 does not have N electrode fingers extending outward based on the N electrode pad 15.

[0047] However, no matter which form it is, the N electrode pad 15 and the P electrode pad 16 are both essential structures to achieve the electrical connection between the LED chip and the outside.

[0048] It should be noted that the technical solution of the present application can improve any one of the four parts of the N electrode pad 15, the N electrode fingers 151 corresponding to the N electrode pad 15, the P electrode pad 16, and the P electrode fingers 161 corresponding to the P electrode pad 16, or improve at least two of the above parts.

[0049] In the LED chip provided by the embodiment of the present invention, the epitaxial layer has a patterned film layer for setting the electrode structure, and the patterned film layer includes an electrode pad patterning area and an electrode finger patterning area. Among them, based on the P electrode structure, the patterned film layer can be a P-type semiconductor layer 14 or a transparent conductive layer (also known as an ITO layer) or other functional film layers; based on the N electrode structure, the patterned film layer can be an N-type semiconductor layer 12 or a transparent conductive layer (also known as an ITO layer) or other functional film layers.

[0050] The electrode fingers are located in the electrode finger patterning area, and the electrode fingers include a first reflective electrode layer and a first electrode layer stacked in the first direction, and the first electrode layer at least completely covers the first reflective electrode layer.

[0051] The electrode pad patterned area has a raised structure 17, and the raised structure 17 and the patterned film layer are of an integral structure; the electrode pad is located within the electrode pad patterned area, and the electrode pad includes a second reflective electrode layer and a second electrode layer; in the first direction, the thickness of the second reflective electrode layer is less than or equal to the height of the raised structure 17, and the second electrode layer at least completely covers the second reflective electrode layer.

[0052] As Figures 2 - 4 shown, the shape of the raised structure 17 can be a cylinder or an annular shape or other shapes, and the arrangement can also be Figure 4 the array arrangement shown, which is not limited in the embodiments of the present invention.

[0053] Among them, in the first direction, the thickness of the second reflective electrode layer being less than or equal to the height of the raised structure 17 is to ensure that the second electrode layer can directly contact the raised structure 17 and avoid the situation where the second reflective layer completely covers the raised structure 17. Finally, it is ensured that the second electrode layer can partially contact the raised structure 17 and partially contact the second reflective layer.

[0054] Specifically, in the embodiments of the present invention, the first reflective electrode layer can improve the light reflectivity at the electrode fingers, and the second reflective electrode layer can improve the light reflectivity at the electrode pads, thereby achieving the purpose of improving the light emission efficiency of the LED chip. The first electrode layer and the second electrode layer can be understood as the electrode layers of a conventional LED chip. By covering the first reflective electrode layer with the first electrode layer and covering the second reflective electrode layer with the second electrode layer, the peeling of the reflective electrode layer and the epitaxial layer can be avoided; and the second electrode layer also contacts the raised structure of the epitaxial layer itself, which is equivalent to the contact mode between the electrode layer of a conventional LED chip and the film layer of the epitaxial layer. The contact stability of this part is relatively higher than the contact stability between the second electrode layer and the second reflective electrode layer, and the peeling between the second electrode layer and the second reflective electrode layer can be avoided, that is, the contact stability between the second electrode layer and the second reflective electrode layer is further improved, thereby comprehensively improving the stability of the electrode structure.

[0055] In another embodiment of the present invention, the first reflective electrode layer is a combination of one or more of an Al material layer, an Ag material layer, and a DBR layer, and / or the second reflective electrode layer is a combination of one or more of an Al material layer, an Ag material layer, and a DBR layer.

[0056] The material of the first electrode layer is a Cr material or a Ni material or the electrode material of other conventional LED chips, and / or the material of the second electrode layer is a Cr material or a Ni material or the electrode material of other conventional LED chips.

[0057] The thickness range of the first reflective electrode layer is 0.2 μm - 0.5 μm, including the endpoint values; and / or the thickness range of the second reflective electrode layer is 0.2 μm - 0.5 μm, including the endpoint values.

[0058] Specifically, in the embodiments of the present invention, the film layers where the LED chip is finally welded to the bonding wires are the first electrode layer and the second electrode layer. The first electrode layer and the second electrode layer made of Cr material or Ni material, that is, using the conventional LED chip electrode materials as the materials of the first electrode layer and the second electrode layer, have good eutectic ability with the bonding wires, avoiding abnormalities such as loose bonding wires and solder ball detachment, and thus improving the bonding effect of the LED chip.

[0059] It should be noted that the materials of the first reflective electrode layer and the second reflective electrode layer may be the same or different, and are not limited in the embodiments of this application; the materials of the first electrode layer and the second electrode layer may be the same or different, and are not limited in the embodiments of this application; the thicknesses of the first reflective electrode layer and the second reflective electrode layer may be the same or different, and are not limited in the embodiments of this application.

[0060] In another embodiment of the present invention, refer to Figure 5 , Figure 5 which is a top view structural schematic diagram of an LED chip provided by an embodiment of the present invention. The first electrode layer and the second electrode layer are an integrally formed single electrode layer.

[0061] Specifically, in the embodiments of the present invention, the preparation of the entire film layer of the first electrode layer and the second electrode layer can be achieved through one process, thereby simplifying the preparation method of the LED chip and reducing the manufacturing cost.

[0062] Exemplarily, when improving the N electrode pad 15 and the N electrode finger 151 corresponding to the N electrode pad 15, the first electrode layer corresponding to the N electrode finger 151 and the second electrode layer corresponding to the N electrode pad 15 are an integrally formed single electrode layer, that is, the preparation of the entire film layer of the first electrode layer and the second electrode layer is achieved through one process.

[0063] Similarly, when improving the P electrode pad 16 and the P electrode finger 161 corresponding to the P electrode pad 16, the first electrode layer corresponding to the P electrode finger 161 and the second electrode layer corresponding to the P electrode pad 16 are an integrally formed single electrode layer, that is, the preparation of the entire film layer of the first electrode layer and the second electrode layer is achieved through one process.

[0064] Based on the above embodiments of the utility model, in another embodiment of the present invention, a preparation method of an LED chip is further provided. Refer to Figure 6 , Figure 6Schematic flow chart of a method for manufacturing an LED chip provided by an embodiment of the present utility model. The method for manufacturing an LED chip provided by an embodiment of the present utility model includes:

[0065] S101: Provide a substrate 11.

[0066] S102: Form an epitaxial layer on one side of the substrate. The epitaxial layer includes an N-type semiconductor layer 12, a multi-quantum well layer 13, and a P-type semiconductor layer 14 that are sequentially stacked in a first direction; the first direction is perpendicular to the plane where the substrate 11 is located and points from the substrate 11 to the epitaxial layer.

[0067] S103: Process the epitaxial layer to make the epitaxial layer have a patterned film layer for setting the electrode structure. The patterned film layer includes an electrode pad patterned area and an electrode finger patterned area; a raised structure 17 is provided in the electrode pad patterned area, and the raised structure 17 and the patterned film layer are an integral structure.

[0068] Specifically, the processes for processing the epitaxial layer include but are not limited to the following processes:

[0069] In an alternative embodiment of the present utility model, the method for manufacturing an LED chip may further include: cleaning the above epitaxial layer, including but not limited to preparing a mesa lithography pattern through processes such as spin coating, exposure, and development, including but not limited to etching a mesa area through an ICP process, and then removing the photoresist.

[0070] In an alternative embodiment of the present utility model, the method for manufacturing an LED chip may further include: depositing a SiO2 barrier layer with a thickness range of 2100 Å - 4100 Å (including the end values) on the surface of the above chip source by using a PECVD machine, including but not limited to.

[0071] In an alternative embodiment of the present utility model, the method for manufacturing an LED chip may further include: preparing a CB (also known as a current blocking layer in the art) lithography pattern on the surface of the above chip source through processes such as spin coating, exposure, and development, including but not limited to etching through a BOE process, and then removing the photoresist.

[0072] In an alternative embodiment of the present utility model, the method for manufacturing an LED chip may further include: depositing a transparent conductive layer (also known as an ITO layer in the art) with a thickness range of 600 Å - 1100 Å (including the end values) on the surface of the above chip source by using a sputtering process, including but not limited to.

[0073] In an alternative embodiment of the present utility model, the method for preparing an LED chip may further include: annealing the transparent conductive layer in a rapid annealing furnace, where the annealing temperature range may be 500°C - 650°C (including the endpoint values), and the annealing time range may be 1 min - 10 min (including the endpoint values).

[0074] In an alternative embodiment of the present utility model, the method for preparing an LED chip may further include: including but not limited to using a positive photoresist as a mask, wet etching the transparent conductive layer, and removing the photoresist after etching.

[0075] It should be noted that based on the P - electrode structure, the patterned film layer may be a P - type semiconductor layer 14 or a transparent conductive layer (also known as an ITO layer) or other functional film layers; based on the N - electrode structure, the patterned film layer may be an N - type semiconductor layer 12 or a transparent conductive layer (also known as an ITO layer) or other functional film layers. It is not limited in the embodiments of the present application.

[0076] S104: Prepare an electrode structure, the electrode structure includes an N - electrode pad 15 electrically connected to the N - type semiconductor layer 12, and a P - electrode pad 16 electrically connected to the P - type semiconductor layer 14; at least one of the N - electrode pad 15 and the P - electrode pad 16 further includes electrode fingers extending outward based on the electrode pad; the electrode fingers are located within the electrode finger patterning area, the electrode fingers include a first reflective electrode layer and a first electrode layer stacked in the first direction, and the first electrode layer at least completely covers the first reflective electrode layer; the electrode pad is located within the electrode pad patterning area, the electrode pad includes a second reflective electrode layer and a second electrode layer; in the first direction, the thickness of the second reflective electrode layer is less than or equal to the height of the protrusion structure 17, and the second electrode layer at least completely covers the second reflective electrode layer.

[0077] Specifically, in the embodiments of the present utility model, it includes but is not limited to using a negative photoresist as a mask, and includes but is not limited to forming a reflective electrode layer by electron beam evaporation for the first metal evaporation. After evaporation, operations such as metal lift - off and photoresist removal are performed to form a reflective electrode layer of an Al material layer, an Ag material layer, or a DBR layer, and its thickness range may be 0.2 μm - 0.5 μm, including the endpoint values.

[0078] It includes but is not limited to using a negative photoresist as a mask, and includes but is not limited to forming an electrode layer by electron beam evaporation for the second metal evaporation. After evaporation, operations such as metal lift - off and photoresist removal are performed to form an electrode layer of a Cr material or a Ni material or an electrode material of other conventional LED chips, and its thickness range may be 1.3 μm - 2.1 μm, including the endpoint values.

[0079] It should be noted that when forming the electrode layer, the first electrode layer and the second electrode layer can be formed in steps, or the preparation of the entire film layer of the first electrode layer and the second electrode layer can be realized in one process, so as to simplify the preparation method of the LED chip and reduce the manufacturing cost.

[0080] In an alternative embodiment of the present invention, when the material of the reflective electrode layer is Al material and is in contact with the GaN layer, before forming the reflective electrode layer, the preparation method of the LED chip further includes:

[0081] Performing SiCl4 ion implantation on the target area of the GaN layer to adjust the surface doping content of the target area; the target area is the contact area between the GaN layer and the reflective electrode layer.

[0082] Specifically, by changing the surface doping content of the target area of the GaN layer, the problem that the ohmic contact between the reflective electrode layer of Al material and the GaN layer in direct contact becomes poor is solved, so as to further improve the optoelectronic performance of the LED chip.

[0083] In an alternative embodiment of the present invention, when the material of the reflective electrode layer is Al material and is in contact with the ITO layer, after forming the reflective electrode layer, the preparation method of the LED chip further includes:

[0084] Performing high-temperature alloy treatment on the reflective electrode layer.

[0085] Specifically, by performing high-temperature alloy treatment on the reflective electrode layer, the problem that the adhesion between the reflective electrode layer of Al material and the ITO layer in direct contact is poor can be solved, and the contact stability between the reflective electrode layer of Al material and the ITO layer can be improved.

[0086] In an alternative embodiment of the present invention, the preparation method of the LED chip may further include: depositing a SiO2 insulating layer with a thickness range of 2300 Å - 10000 Å (including the end point values) on the surface of the above-mentioned wafer source by using the PECVD process, including but not limited to this.

[0087] In an alternative embodiment of the present invention, the preparation method of the LED chip may further include: using a positive photoresist as a mask, wet etching the insulating layer, and removing the photoresist after etching.

[0088] In an alternative embodiment of the present invention, the preparation method of the LED chip may further include: electrically testing the above-prepared wafer based on COW.

[0089] In an alternative embodiment of the present utility model, the method for preparing an LED chip may further include: grinding the wafer to a fixed thickness, for example, thinning it to 100 μm - 120 μm (including the end values), and depositing a DBR structure with a thickness of about 3 μm - 5 μm (including the end values) on the back surface.

[0090] In an alternative embodiment of the present utility model, the method for preparing an LED chip may further include: cutting the above-mentioned wafer to obtain single-core LED chips.

[0091] Based on the above embodiments of the present utility model, in another embodiment of the present utility model, a lighting device is further provided, and the lighting device includes the LED chip described in the above embodiment.

[0092] The above has introduced in detail an LED chip, its preparation method, and a lighting device provided by the present utility model. Specific examples are used in this article to elaborate on the principle and implementation manner of the present utility model. The description of the above embodiments is only used to help understand the method and its core idea of the present utility model; at the same time, for those of ordinary skill in the art, according to the idea of the present utility model, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present utility model.

[0093] It should be noted that each embodiment in this specification is described in a progressive manner. The key point of each embodiment is to illustrate the differences from other embodiments. The same or similar parts among the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the description of the method part.

[0094] It should also be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements but also other elements inherent to these process, method, article or device. Without further limitation, an element defined by the statement "including a..." does not exclude the existence of additional identical elements in the process, method, article or device including the said element.

[0095] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present utility model. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present utility model. Therefore, the present utility model will not be limited to the embodiments shown herein, but rather to the broadest scope consistent with the principles and novel features disclosed herein.

Claims

1. An LED chip, characterized in that, The LED chip includes: a substrate; an epitaxial layer located on one side of the substrate, the epitaxial layer including an N-type semiconductor layer, a multi-quantum well layer, and a P-type semiconductor layer sequentially stacked in a first direction; the first direction is perpendicular to the plane where the substrate is located and points from the substrate to the epitaxial layer; an electrode structure, the electrode structure including an N electrode pad electrically connected to the N-type semiconductor layer and a P electrode pad electrically connected to the P-type semiconductor layer; at least one of the N electrode pad and the P electrode pad further includes electrode fingers extending outward based on the electrode pad; the epitaxial layer has a patterned film layer for arranging the electrode structure, the patterned film layer including an electrode pad patterning area and an electrode finger patterning area; the electrode fingers are located in the electrode finger patterning area, the electrode fingers including a first reflective electrode layer and a first electrode layer stacked in the first direction, the first electrode layer at least completely covering the first reflective electrode layer; a convex structure is provided in the electrode pad patterning area, and the convex structure is an integral structure with the patterned film layer; the electrode pad is located in the electrode pad patterning area, the electrode pad including a second reflective electrode layer and a second electrode layer; in the first direction, the thickness of the second reflective electrode layer is less than or equal to the height of the convex structure, and the second electrode layer at least completely covers the second reflective electrode layer.

2. The LED chip according to claim 1, wherein The first electrode layer and the second electrode layer are an integrally formed single electrode layer.

3. The LED chip according to claim 1, characterized in that, The first reflective electrode layer is a combination of one or more of an Al material layer, an Ag material layer, and a DBR layer, and / or the second reflective electrode layer is a combination of one or more of an Al material layer, an Ag material layer, and a DBR layer.

4. The LED chip according to claim 1, characterized in that, The material of the first electrode layer is Cr material or Ni material, and / or the material of the second electrode layer is Cr material or Ni material.

5. The LED chip according to claim 1, wherein The thickness range of the first reflective electrode layer is 0.2 μm - 0.5 μm, including the end values, and / or the thickness range of the second reflective electrode layer is 0.2 μm - 0.5 μm, including the end values.

6. A lighting device, characterized in that, The lighting device includes the LED chip according to any one of claims 1 - 5.

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