Bottom support for growing diamond polycrystalline die

Abstract

The utility model discloses a cork base for growing a polycrystalline diamond die. The cork base comprises a cork base body, a diversion structure; the flow guide structure is arranged on the upper surface of the collet body; a seed crystal tray; and the seed crystal tray is also arranged on the upper surface of the collet body. The tray has the advantages that the flow guide structure is arranged on the surface of the tray body, if the temperature on the tray body is not uniform during microwave heating, pressure difference can be formed on the surface of the tray body, air flow can be formed on the surface of the tray body at the moment, and the air flow conducts heat conduction and heat exchange on the tray body through the flow guide structure; therefore, the temperature difference of all the areas on the tray body is reduced, the temperature difference is close to zero wirelessly, and the grown diamond polycrystalline film is uniform in thickness and higher in quality.

Description

Technical Field

[0001] The utility model relates to the technical field of crystal synthesis, in particular to a bottom bracket for growing polycrystalline diamond films. Background Art

[0002] Diamond has excellent physical, chemical and electrical properties such as high hardness, high thermal conductivity, acid and alkali corrosion resistance and ultra-wide bandgap, and has important application values in the fields of machinery, semiconductors and jewelry. Natural diamond has small reserves, high price, and problems such as uneven quality and small size in nature. Therefore, in order to obtain large-area, stable, uniform, low-cost and high-quality diamond, it is necessary to develop artificial synthesis technology of diamond. At present, the main methods for artificially synthesizing diamond are the high temperature and high pressure (HPHT) method and the chemical vapor deposition (CVD) method. Among various CVD diamond preparation methods, the microwave plasma chemical vapor deposition (MPCVD) method has become the preferred method for preparing high-quality diamond due to its characteristics such as high plasma power density, no electrode discharge pollution and stable performance.

[0003] In addition to epitaxial high-quality single-crystal diamond, MPCVD equipment is also applied to the epitaxy of large-area diamond polycrystalline films on heterogeneous substrates. At present, the MPCVD equipment using a 2.45 GHz microwave source on the market is used to epitaxially grow diamond polycrystalline films with a maximum size of 2 inches, while the MPCVD equipment using a 915 MHz microwave source can epitaxially grow diamond polycrystalline films with a size of 4-6 inches. The uniformity of large-area diamond polycrystalline films depends to a great extent on the collimation of the plasma sphere, and the latter is affected by various factors such as the distribution of the microwave field, the disturbance of the mixed growth gas, and the structure of the sample stage and the cavity. Therefore, it is very difficult for even the best-quality MPCVD equipment to avoid the tilt and offset of the plasma sphere, which will cause uneven temperature at each position of the sample, and this phenomenon is particularly serious on large-area substrates. The temperature difference will not only lead to uneven growth rate and thickness, but also cause differences in diamond crystal orientations at different positions. More seriously, when the substrate is relatively thin, the edge with a higher heating temperature is prone to deformation and warping. This part has poor heat conduction due to detachment from the contact with the sample holder, resulting in a sharp rise in temperature, and ultimately leading to the graphitization of diamond crystals, which severely restricts the high-quality and uniform growth of large-area diamond polycrystalline films.

[0004] Therefore, it is necessary to develop a bottom bracket for growing polycrystalline diamond films. After retrieval, no technical solution identical to that of the present utility model has been found. Content of the Utility Model

[0005] The main technical problem to be solved by the present utility model is to provide a bottom bracket for growing polycrystalline diamond films, and solve one or more of the above-mentioned existing technical problems.

[0006] To solve the above technical problems, a technical solution adopted by the present utility model is: a bottom support for growing polycrystalline diamond films, and its innovation lies in: including

[0007] a bottom support body;

[0008] a flow guiding structure; the flow guiding structure is arranged on the upper surface of the bottom support body;

[0009] a seed crystal tray; the seed crystal tray is also arranged on the upper surface of the bottom support body.

[0010] In some embodiments, the flow guiding structure includes a transverse flow guiding groove and a longitudinal flow guiding groove. The transverse flow guiding groove and the longitudinal flow guiding groove are arranged to intersect with each other and are perpendicular to each other. The transverse flow guiding groove and the longitudinal flow guiding groove divide the upper surface of the bottom support body into several sub-units, and the sub-units include complete units and incomplete units.

[0011] In some embodiments, the seed crystal tray is arranged on the surface of the complete unit. The seed crystal tray includes a tray body that protrudes upward and a heat dissipation groove arranged at the top of the tray body.

[0012] In some embodiments, the cross-section of the tray body is circular, and the circle formed by the cross-section is the inscribed circle of the complete unit.

[0013] In some embodiments, the heat dissipation groove is concentrically arranged with the tray body. A heat dissipation notch is also arranged on the tray body, and the heat dissipation notch communicates the heat dissipation groove and the flow guiding structure.

[0014] In some embodiments, the depth of the heat dissipation notch is 0.3 - 0.5 times the depth of the heat dissipation groove.

[0015] In some embodiments, the bottom support further includes a heat conduction seat arranged at the bottom of the bottom support body. A heat conduction structure is arranged on the heat conduction seat. The heat conduction structure includes a first heat conduction channel arranged horizontally, a second heat conduction channel arranged vertically, and a third heat conduction channel perpendicular to the bottom surface of the heat conduction seat; the first heat conduction channel and the second heat conduction channel are arranged to intersect with each other and are perpendicular to each other; the third heat conduction channel passes through the intersection of the first heat conduction channel and the second heat conduction channel.

[0016] The beneficial effects of the present utility model are as follows: In the technical solution, a flow guiding structure is provided on the surface of the tray body. When the temperature on the tray body is uneven during microwave heating, a pressure difference will be formed on the surface of the tray body. At this time, an air flow will be formed on the surface of the tray body. The air flow conducts heat and exchanges heat with the tray body through the flow guiding structure, which will reduce the temperature difference between different regions on the tray body, so as to be infinitely close to 0 temperature difference. Therefore, the thickness of the grown polycrystalline diamond film is uniform and the quality is higher. The heat conducting structure provided in the heat conducting seat of the technical solution can make the heat dissipation of the tray body better. The structural design of the first heat conducting channel, the second heat conducting channel and the third heat conducting channel of the heat conducting structure can make the heat dissipation of each region of the heat conducting seat uniform, prevent uneven heat dissipation of each part, and thus avoid the problem of uneven temperature of each region of the tray body, and avoid the problem of high rate of defective products caused by uneven temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present utility model, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present utility model. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings, where:

[0018] Figure 1 is the axonometric view of a bottom tray for growing polycrystalline diamond film of the present utility model.

[0019] Figure 2 is the top view of a bottom tray for growing polycrystalline diamond film of the present utility model.

[0020] Figure 3 is the front view of a bottom tray for growing polycrystalline diamond film of the present utility model.

[0021] Figure 4 is Figure 3 the sectional view taken along the line AA of

[0022] Figure 5 is the bottom view of a bottom tray for growing polycrystalline diamond film of the present utility model. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, rather than all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present utility model.

[0024] As Figures 1 to 5 shown, the embodiments of the present utility model include:

[0025] A base for growing polycrystalline diamond film, comprising

[0026] a base body 100;

[0027] a diversion structure; the diversion structure is arranged on the upper surface of the base body 100;

[0028] a seed crystal tray; the seed crystal tray is also arranged on the upper surface of the base body 100.

[0029] In this embodiment, the diversion structure includes a transverse diversion groove 201 and a longitudinal diversion groove 202. The transverse diversion groove 201 and the longitudinal diversion groove 202 are arranged to cross each other and are perpendicular to each other. The transverse diversion groove 201 and the longitudinal diversion groove 202 divide the upper surface of the base body 100 into several sub-units, and the sub-units include a complete unit 204 and an incomplete unit 203.

[0030] In this embodiment, the seed crystal tray is arranged on the surface of the complete unit 204. The seed crystal tray includes a tray body 301 that protrudes upward and a heat dissipation groove 302 arranged at the top of the tray body 301.

[0031] In this embodiment, the cross-section of the tray body 301 is circular, and the circle formed by this cross-section is the inscribed circle of the complete unit 204.

[0032] In this embodiment, the heat dissipation groove 302 is concentrically arranged with the tray body 301. A heat dissipation notch 303 is also arranged on the tray body 301. The heat dissipation notch 303 communicates the heat dissipation groove 302 and the diversion structure. In this embodiment, the heat flow in the area with too high temperature is guided out through the heat dissipation notch 303, and the heat is dispersed through the diversion structure, so as to achieve the effect of reducing the temperature difference in the area.

[0033] In this embodiment, the depth of the heat dissipation notch 303 is 0.3 - 0.5 times the depth of the heat dissipation groove 302.

[0034] In this embodiment, the base further includes a heat conduction seat 401 arranged at the bottom of the base body 100. A heat conduction structure is arranged on the heat conduction seat 401. The heat conduction structure includes a first heat conduction channel 402 arranged horizontally, a second heat conduction channel 403 arranged vertically, and a third heat conduction channel 404 perpendicular to the bottom surface of the heat conduction seat 401; the first heat conduction channel 402 and the second heat conduction channel 403 are arranged to cross each other and are perpendicular to each other; the third heat conduction channel 404 passes through the intersection of the first heat conduction channel 402 and the second heat conduction channel 403.

[0035] The beneficial effects of the present utility model are as follows: In this technical solution, a flow guiding structure is provided on the surface of the tray body 301. When the temperature on the tray body 301 is uneven during microwave heating, a pressure difference will be formed on the surface of the tray body 301. At this time, an air flow will be formed on the surface of the tray body 301. The air flow conducts heat and exchanges heat with the tray body 301 through the flow guiding structure, which will reduce the temperature difference between different regions on the tray body 301, so as to be infinitely close to 0 temperature difference. Therefore, the thickness of the grown polycrystalline diamond film is uniform and the quality is higher. The heat conducting structure provided in the heat conducting seat 401 of this technical solution can make the heat dissipation of the tray body 301 better. The structural design of the first heat conducting channel 402, the second heat conducting channel 403 and the third heat conducting channel 404 of the heat conducting structure can make the heat conducting seat 401 dissipate heat evenly in each region, preventing uneven heat dissipation in each part, which may lead to a temperature difference in each region of the tray body 301, and avoiding the problem of a high proportion of defective products caused by uneven temperature.

[0036] The above are only the embodiments of the present utility model, and do not limit the patent scope of the present utility model accordingly. Any equivalent structure or equivalent process transformation made by using the content of the specification of the present utility model, or directly or indirectly applied to other related technical fields, shall be similarly included in the patent protection scope of the present utility model.

Claims

1. A base for growing polycrystalline diamond films, characterized in that: including a base body (100); a diversion structure; the diversion structure is arranged on the upper surface of the base body (100); a seed crystal tray; the seed crystal tray is also arranged on the upper surface of the base body (100).

2. The base for growing polycrystalline diamond film according to claim 1, wherein: The diversion structure includes a transverse diversion groove (201) and a longitudinal diversion groove (202). The transverse diversion groove (201) and the longitudinal diversion groove (202) are arranged to cross each other and are perpendicular to each other. The transverse diversion groove (201) and the longitudinal diversion groove (202) divide the upper surface of the base body (100) into several sub-units, and the sub-units include a complete unit (204) and an incomplete unit (203).

3. A base for growing polycrystalline diamond film according to claim 2, characterized in that: The seed crystal tray is arranged on the surface of the complete unit (204). The seed crystal tray includes a tray body (301) that protrudes upward and a heat dissipation groove (302) arranged at the top of the tray body (301).

4. A base for growing polycrystalline diamond film according to claim 3, characterized in that: The cross-section of the tray body (301) is circular, and the circle formed by the cross-section is the inscribed circle of the complete unit (204).

5. The backing for growing polycrystalline diamond film according to claim 3, characterized in that: The heat dissipation groove (302) is arranged concentrically with the tray body (301). A heat dissipation notch (303) is also arranged on the tray body (301), and the heat dissipation notch (303) communicates the heat dissipation groove (302) and the diversion structure.

6. A base for growing polycrystalline diamond film according to claim 5, characterized in that: The depth of the heat dissipation notch (303) is 0.3-0.5 times the depth of the heat dissipation groove (302).

7. A base for growing polycrystalline diamond film according to claim 1, characterized in that: The base also includes a heat conduction seat (401) arranged at the bottom of the base body (100). A heat conduction structure is arranged on the heat conduction seat (401). The heat conduction structure includes a first heat conduction channel (402) arranged horizontally, a second heat conduction channel (403) arranged vertically, and a third heat conduction channel (404) perpendicular to the bottom surface of the heat conduction seat (401); the first heat conduction channel (402) and the second heat conduction channel (403) are arranged to cross each other and are perpendicular to each other; the third heat conduction channel (404) passes through the intersection of the first heat conduction channel (402) and the second heat conduction channel (403).

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