Resistance type silicon carbide crystal growth cooling device and crystal growth equipment

Abstract

The utility model provides a resistance type silicon carbide crystal growth cooling device and crystal growth equipment, the device is used for coating a heat preservation felt of the crystal growth equipment, the device comprises two half-barrel structures, the two half-barrel structures are respectively arranged on a door body and a main body of a vacuum cavity, and the two half-barrel structures can be combined into a complete barrel shape; each half-barrel structure comprises a top, a bottom and an annular side portion, the top and the bottom are arranged at the two ends of the annular side portion respectively, cooling channels are formed in the top, the bottom and the annular side portion respectively, joints are arranged at the two ends of each cooling channel respectively, and the joints are used for being connected with flexible pipelines. According to the device and the crystal growth equipment, the stability of a thermal field where the graphite crucible is located can be improved, the precision of the crystal growth temperature is maintained, and the crystal growth quality is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of crystal growth equipment, and more specifically, to a resistive silicon carbide crystal growth cooling device and a crystal growth equipment. Background Art

[0002] The existing silicon carbide crystal growth equipment generally only designs a water cooling circulation pipeline on the vacuum chamber to cool the thermal field in the vacuum chamber and prevent excessive heat from spreading outside the vacuum chamber. However, through research by the inventor, it is found that only cooling through the water cooling circulation pipeline on the vacuum chamber in the existing silicon carbide crystal growth equipment still causes the temperature of the vacuum chamber to be too high, the thermal field where the graphite crucible is located is unstable and fluctuates greatly, it is difficult to maintain the accuracy of the crystal growth temperature, and the crystal growth quality is unstable. Summary of the Utility Model

[0003] The purpose of the utility model is to provide a resistive silicon carbide crystal growth cooling device and a crystal growth equipment, which can improve the stability of the thermal field where the graphite crucible is located, maintain the accuracy of the crystal growth temperature, and improve the crystal growth quality.

[0004] The embodiments of the utility model are implemented as follows:

[0005] In a first aspect, the utility model provides a resistive silicon carbide crystal growth cooling device. The device is used to wrap around the thermal insulation felt of the crystal growth equipment. The device includes two half-barrel structures, which are respectively installed on the door body and the main body of the vacuum chamber, and the two half-barrel structures can be combined into a complete barrel shape;

[0006] The half-barrel structure includes a top, a bottom, and an annular side. The top and the bottom are respectively arranged at both ends of the annular side. The top, the bottom, and the annular side are all provided with cooling channels inside, and connectors are respectively arranged at both ends of the cooling channels for connecting with flexible pipelines.

[0007] In an optional embodiment, both the top and the bottom include a first housing and a first partition strip. A plurality of first partition strips are arranged at intervals inside the first housing to plan the bent cooling channels inside the top and the bottom.

[0008] In an optional embodiment, the first housing includes semi-circular side walls, a first straight side wall, and a first arc side wall. Two semi-circular side walls are arranged in parallel at intervals, the first straight side wall is connected to the straight edges of the two semi-circular side walls, and the first arc side wall is connected to the arc edges of the two semi-circular side walls;

[0009] A plurality of first partition bars are arranged at intervals and in parallel along the length direction of the first straight side wall. The upper and lower side surfaces of the first partition bar are respectively connected to two semi-circular side walls. One lateral end of the first partition bar is connected to the first straight side wall or the first arc-shaped side wall, and the other lateral end of the first partition bar is a free end.

[0010] In an alternative embodiment, one lateral end of adjacent two first partition bars is staggeredly connected to the first straight side wall and the first arc-shaped side wall.

[0011] In an alternative embodiment, electrode introduction holes penetrating up and down are respectively provided on the top and the bottom. The diameter a of the electrode introduction hole is smaller than the distance b between adjacent two first partition bars, and the electrode introduction holes are isolated from the cooling channels.

[0012] In an alternative embodiment, the annular side portion includes a second housing and second partition bars. A plurality of second partition bars are arranged at intervals inside the second housing to define a bent cooling channel inside the annular side portion.

[0013] In an alternative embodiment, the second housing includes a second straight side wall and second arc-shaped side walls. The two second arc-shaped side walls are arranged at intervals and in parallel. The arc-shaped edges on one side of the two second arc-shaped side walls are connected to the top, and the arc-shaped edges on the other side of the two second arc-shaped side walls are connected to the bottom. The four edges of the second straight side wall are respectively connected to the bottom surface of the top, the top surface of the bottom, and the straight edges of the two second arc-shaped side walls.

[0014] In an alternative embodiment, a plurality of second partition bars are arranged at intervals and in parallel along the bending direction of the second arc-shaped side wall. The front and rear side surfaces of the second partition bar are respectively connected to the two second arc-shaped side walls. One longitudinal end of the second partition bar is connected to the top or the bottom, and the other longitudinal end of the second partition bar is a free end.

[0015] In an alternative embodiment, one lateral end of adjacent two second partition bars is staggeredly connected to the top and the bottom.

[0016] In a second aspect, the present utility model provides a crystal growth device. The crystal growth device includes a vacuum chamber and the resistive silicon carbide crystal growth cooling device of the foregoing embodiment. Connectors are provided on both the door body and the main body of the vacuum chamber. The connector on one half-barrel structure is connected to the connector on the door body through a flexible pipeline, and the connector on the other half-barrel structure is connected to the connector on the main body through a flexible pipeline.

[0017] The beneficial effects of the resistive silicon carbide crystal growth cooling device and the crystal growth device provided by the embodiments of the present utility model include:

[0018] 1. The device can be applied to crystal growth equipment, is arranged in a hollow cavity and wrapped on a heat insulation felt, so that the high temperature inside the heat insulation felt (the area where the crystal growth crucible is located) is less affected by the external environment, can reduce the fluctuation of the crystal growth temperature, maintain the accuracy of the crystal growth temperature, and improve the crystal growth quality;

[0019] 2. The device has a simple structure. By circulating a cooling medium into the cooling channel of the device, the cooling efficiency of the device can be adjusted, and the accuracy of the thermal field control can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0021] Figure 1 It is an axonometric structure diagram of the resistive silicon carbide crystal growth cooling device provided by the embodiment of the present invention;

[0022] Figure 2 It is a front view structure diagram of the resistive silicon carbide crystal growth cooling device provided by the embodiment of the present invention;

[0023] Figure 3 It is a top view structure diagram of the resistive silicon carbide crystal growth cooling device provided by the embodiment of the present invention;

[0024] Figure 4 It is a bottom view structure diagram of the resistive silicon carbide crystal growth cooling device provided by the embodiment of the present invention;

[0025] Figure 5 For Figure 2 the cross-sectional view along the cutting line A-A (top);

[0026] Figure 6 It is an axonometric structure diagram of a half-barrel structure;

[0027] Figure 7 It is a front view structure diagram of a half-barrel structure;

[0028] Figure 8 It is a structure diagram of the inside of the annular side part after being unfolded;

[0029] Figure 9 It is a structure diagram of the crystal growth equipment provided by the embodiment of the present invention.

[0030] Icons: 1 - half - barrel structure; 2 - top; 3 - bottom; 4 - first housing; 41 - semi - circular side wall; 42 - first straight side wall; 43 - first arc side wall; 44 - first partition bar; 45 - electrode inlet hole; 5 - annular side part; 6 - second housing; 61 - second straight side wall; 62 - second arc side wall; 63 - second partition bar; 7 - cooling channel; 8 - joint; 9 - vacuum cavity; 91 - door body; 92 - main body; 10 - flexible pipeline. Detailed implementation manners

[0031] To make the objectives, technical solutions and advantages of the embodiments of the present utility model clearer, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are some but not all of the embodiments of the present utility model. Usually, the components of the embodiments of the present utility model described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.

[0032] Therefore, the following detailed description of the embodiments of the present utility model provided in the accompanying drawings is not intended to limit the scope of the present utility model claimed, but merely represents selected embodiments of the present utility model. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without creative efforts fall within the scope of protection of the present utility model.

[0033] It should be noted that: similar reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0034] In the description of the present utility model, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the utility model product is usually placed during use. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present utility model. In addition, the terms "first", "second", "third", etc. are only used for descriptive distinction and cannot be understood as indicating or implying relative importance.

[0035] In addition, terms such as "horizontal" and "vertical" do not mean that the components are required to be absolutely horizontal or hanging, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0036] In the description of the present utility model, it should also be noted that unless otherwise clearly specified and defined, the terms "arranged", "installed", "connected", and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.

[0037] First Embodiment

[0038] Please refer to Figures 1 to 8 , this embodiment provides a resistive silicon carbide crystal growth cooling device (hereinafter referred to as: the device), which is used to cover the heat insulation felt of the crystal growth equipment. The device includes two half-barrel structures 1, and the two half-barrel structures 1 are respectively installed on the door body 91 and the main body 92 of the vacuum chamber 9, and the two half-barrel structures 1 can be combined into a complete barrel shape. In this embodiment, the two half-barrel structures 1 have the same shape and size. Of course, according to the assembly requirements, two half-barrel structures 1 with different sizes can also be designed.

[0039] The half-barrel structure 1 includes a top 2, a bottom 3, and an annular side portion 5, and the top 2 and the bottom 3 are respectively arranged at both ends of the annular side portion 5.

[0040] The top 2, the bottom 3, and the annular side portion 5 are all hollow structures. The top 2, the bottom 3, and the annular side portion 5 are all provided with cooling channels 7 inside (please refer to Figure 4 and Figure 8 ), and connectors 8 are respectively arranged at both ends of the cooling channel 7, and the connectors 8 are used to connect with the flexible pipeline 10.

[0041] The top 2 and the bottom 3 both include a first housing 4 and a first partition strip 44 (please refer to Figure 5 ), and a plurality of first partition strips 44 are arranged at intervals inside the first housing 4 to define the bent cooling channels 7 inside the top 2 and the bottom 3. The first housing 4 includes a semi-circular side wall 41, a first straight side wall 42, and a first arc side wall 43. The two semi-circular side walls 41 are arranged in parallel at intervals, the first straight side wall 42 is connected to the straight edges of the two semi-circular side walls 41, and the first arc side wall 43 is connected to the arc edges of the two semi-circular side walls 41.

[0042] A plurality of first partition bars 44 are arranged at intervals and in parallel along the length direction of the first straight side wall 42. The upper and lower side surfaces of the first partition bars 44 are respectively connected to the two semi-circular side walls 41. One lateral end of the first partition bar 44 is connected to the first straight side wall 42 or the first arc-shaped side wall 43, and the other lateral end of the first partition bar 44 is a free end. The lateral ends of two adjacent first partition bars 44 are staggeredly connected to the first straight side wall 42 and the first arc-shaped side wall 43.

[0043] Electrode introduction holes 45 penetrating through the top 2 and the bottom 3 are also respectively provided (please refer to Figure 3 and Figure 4 ). The diameter a of the electrode introduction holes 45 is smaller than the distance b between two adjacent first partition bars 44, and the electrode introduction holes 45 are isolated from the cooling channels 7. In this way, the electrode introduction holes 45 will not cause the leakage of the cooling medium in the cooling channels 7, nor will they block the flow of the cooling medium in the cooling channels 7. Of course, other holes provided on the top 2 and the bottom 3 will not cause the leakage of the cooling medium either, nor will they block the cooling channels 7.

[0044] The annular side part 5 includes a second housing 6 and second partition bars 63 (please refer to Figure 8 ). A plurality of second partition bars 63 are arranged at intervals inside the second housing 6 to define the bent cooling channels 7 inside the annular side part 5. The second housing 6 includes a second straight side wall 61 and second arc-shaped side walls 62. The two second arc-shaped side walls 62 are arranged at intervals and in parallel. The arc-shaped edges on one side of the two second arc-shaped side walls 62 are connected to the top 2, and the arc-shaped edges on the other side of the two second arc-shaped side walls 62 are connected to the bottom 3. The four edges of the second straight side wall 61 are respectively connected to the bottom surface of the top 2, the top surface of the bottom 3, and the straight edges of the two second arc-shaped side walls 62.

[0045] A plurality of second partition bars 63 are arranged at intervals and in parallel along the bending direction of the second arc-shaped side walls 62. In this way, the second partition bars 63 can all be designed as straight lines, which is more convenient for production and installation. The front and rear side surfaces of the second partition bars 63 are respectively connected to the two second arc-shaped side walls 62. One longitudinal end of the second partition bars 63 is connected to the top 2 or the bottom 3, and the other longitudinal end of the second partition bars 63 is a free end. The lateral ends of two adjacent second partition bars 63 are staggeredly connected to the top 2 and the bottom 3.

[0046] Second Embodiment

[0047] Please refer to Figure 9, this embodiment provides a crystal growth device, which includes a vacuum chamber 9 and the resistive silicon carbide crystal growth cooling device of the foregoing embodiment. Connectors 8 are provided on both the door body 91 and the main body 92 of the vacuum chamber 9. The connector 8 on one half-barrel structure 1 is connected to the connector 8 on the door body 91 through a flexible pipeline 10, and the connector 8 on the other half-barrel structure 1 is connected to the connector 8 on the main body 92 through a flexible pipeline 10.

[0048] In this embodiment, 6 connectors 8 are provided on one half-barrel structure 1. Correspondingly, 6 connectors 8 are also provided on the door body 91 and the main body 92 respectively. For the half-barrel structure 1 installed on the door body 91, the 6 connectors 8 on the half-barrel structure 1 are connected to the 6 connectors 8 on the door body 91 through the flexible pipeline 10 in one-to-one correspondence. The connection method between the half-barrel structure 1 installed on the main body 92 and the main body 92 is the same. The actual installation positions of the connectors 8 on the door body 91 and the main body 92 can be flexibly arranged according to the actual installation space, and these connectors 8 will be connected to the cooling medium source outside the vacuum chamber 9. Specifically, the flexible pipeline 10 is a metal flexible pipe for semiconductor special gases, and VCR connectors 8 are welded at both ends, which can be directly screwed onto the connectors 8 of the device and the vacuum chamber 9. In this way, it can ensure that the cooling medium in the device and the flexible pipeline 10 is completely isolated from the vacuum environment in the vacuum chamber 9, and it can also ensure that the cooling medium is isolated from the atmospheric environment outside the vacuum chamber 9. The flexible pipeline 10 also has the characteristics of high pressure resistance, high vacuum resistance, and convenient bending, and is convenient for disassembly and installation and has high safety in the crystal growth device.

[0049] The beneficial effects of the resistive silicon carbide crystal growth cooling device and the crystal growth device provided by the embodiment of the present utility model include:

[0050] 1. The device can be applied to a crystal growth device, is arranged in a hollow cavity and wrapped on a heat-insulating felt, so that the high temperature inside the heat-insulating felt (the area where the crystal growth crucible is located) is less affected by the external environment, can reduce the fluctuation of the crystal growth temperature, maintain the accuracy of the crystal growth temperature, and improve the crystal growth quality;

[0051] 2. The device structure is simple. By circulating a cooling medium into the cooling channel 7 of the device, the cooling efficiency of the device can be adjusted, and the accuracy of thermal field control can be improved;

[0052] 3. The cooling channel 7 of the device is connected to the connector 8 on the vacuum chamber 9 through the connector 8 and the flexible pipeline 10, which is not only convenient for management and layout, but also has high safety.

[0053] The above are only the preferred embodiments of the present utility model and are not used to limit the present utility model. For those skilled in the art, the present utility model can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model shall be included in the protection scope of the present utility model.

Claims

1. A resistive silicon carbide crystal growth cooling device, characterized in that, The device is used to wrap around the heat insulation felt of a crystal growth device. The device includes two semi-barrel structures (1), and the two semi-barrel structures (1) are respectively installed on the door body (91) and the main body (92) of the vacuum chamber (9), and the two semi-barrel structures (1) can be combined into a complete barrel shape; The semi-barrel structure (1) includes a top (2), a bottom (3) and an annular side part (5). The top (2) and the bottom (3) are respectively arranged at both ends of the annular side part (5). Cooling channels (7) are arranged inside the top (2), the bottom (3) and the annular side part (5), and connectors (8) are respectively arranged at both ends of the cooling channels (7), and the connectors (8) are used to connect with flexible pipelines (10).

2. The resistive silicon carbide crystal growth cooling device according to claim 1, wherein Both the top (2) and the bottom (3) include a first housing (4) and a first partition strip (44). A plurality of the first partition strips (44) are arranged at intervals inside the first housing (4) to plan the bent cooling channels (7) inside the top (2) and the bottom (3).

3. The resistive silicon carbide crystal growth cooling device according to claim 2, wherein The first housing (4) includes semi-circular side walls (41), first straight side walls (42) and first arc side walls (43). The two semi-circular side walls (41) are arranged in parallel at intervals, the first straight side walls (42) are connected to the straight edges of the two semi-circular side walls (41), and the first arc side walls (43) are connected to the arc edges of the two semi-circular side walls (41); A plurality of the first partition strips (44) are arranged in parallel at intervals along the length direction of the first straight side wall (42). The upper and lower side surfaces of the first partition strip (44) are respectively connected to the two semi-circular side walls (41). One transverse end of the first partition strip (44) is connected to the first straight side wall (42) or the first arc side wall (43), and the other transverse end of the first partition strip (44) is a free end.

4. The resistive silicon carbide crystal growth cooling device according to claim 3, wherein One transverse end of adjacent two first partition strips (44) is staggeredly connected to the first straight side wall (42) and the first arc side wall (43).

5. The resistive silicon carbide crystal growth cooling device according to claim 4, wherein Electrode introduction holes (45) penetrating up and down are respectively arranged on the top (2) and the bottom (3). The diameter a of the electrode introduction holes (45) is smaller than the distance b between adjacent two first partition strips (44), and the electrode introduction holes (45) are isolated from the cooling channels (7).

6. The resistive silicon carbide crystal growth cooling device according to claim 1, wherein The annular side part (5) includes a second housing (6) and a second partition strip (63). A plurality of the second partition strips (63) are arranged at intervals inside the second housing (6) to plan the bent cooling channels (7) inside the annular side part (5).

7. The resistive silicon carbide crystal growth cooling device according to claim 6, wherein, The second housing (6) includes a second straight side wall (61) and second arc-shaped side walls (62). The two second arc-shaped side walls (62) are arranged in parallel at intervals. The arc-shaped edges on one side of the two second arc-shaped side walls (62) are connected to the top (2), and the arc-shaped edges on the other side of the two second arc-shaped side walls (62) are connected to the bottom (3). The four edges of the second straight side wall (61) are respectively connected to the bottom surface of the top (2), the top surface of the bottom (3), and the straight edges of the two second arc-shaped side walls (62).

8. The resistive silicon carbide crystal growth cooling device according to claim 7, wherein, A plurality of the second partition bars (63) are arranged in parallel at intervals along the bending direction of the second arc-shaped side wall (62). The front and rear side surfaces of the second partition bar (63) are respectively connected to the two second arc-shaped side walls (62). One longitudinal end of the second partition bar (63) is connected to the top (2) or the bottom (3), and the other longitudinal end of the second partition bar (63) is a free end.

9. The resistive silicon carbide crystal growth cooling device according to claim 8, wherein, The transverse ends of two adjacent second partition bars (63) are staggeredly connected to the top (2) and the bottom (3).

10. A crystal growth device, characterized in that, The crystal growth device includes a vacuum chamber (9) and the resistive silicon carbide crystal growth cooling device according to claim 1. Connectors (8) are provided on both the door body (91) and the main body (92) of the vacuum chamber (9). The connector (8) on one semi-barrel structure (1) is connected to the connector (8) on the door body (91) through a flexible pipeline (10), and the connector (8) on the other semi-barrel structure (1) is connected to the connector (8) on the main body (92) through a flexible pipeline (10).

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