Back plate heating device suitable for wafer

Abstract

The utility model discloses a backboard heating device suitable for a wafer, which comprises a contact body, a heating assembly and a cooling assembly, the contact body is of a cylindrical structure, a cavity is arranged at the rear end part of the cylindrical structure, and an adsorption surface is arranged on the outer vertical surface at the front end of the contact body, so that the adsorption surface forms fitting adsorption to the wafer. The heating assembly is embedded in a rear end cavity where the contact body is located, and heating of the adsorption face where the contact body is located is synchronously formed when the heating assembly is heated. And the cooling assembly is positioned in the cavity at the rear end part of the contact body. The contact surface adopted by the whole device is provided with the vent groove, argon is introduced into the vent groove, direct contact between the contact surface and air can be isolated, the surface integrity of the contact surface can be guaranteed, meanwhile, the vent groove can serve as an adsorption surface to effectively adsorb the wafer, and therefore the requirement that the wafer does not contact with the air in the whole rotating process is met. Therefore, the uniformity of wafer surface heating is realized.

Description

Technical Field

[0001] The utility model belongs to the technical field of wafer processing equipment, and particularly relates to a backplane heating device suitable for wafer sheets. Background Art

[0002] During the manufacturing process of semiconductors, it is necessary to heat the wafer sheets to activate the dopants in the wafer sheets, and it helps the dopants to diffuse in the semiconductor material to ensure the uniformity of doping.

[0003] In Chinese Patent Application Publication No. CN115632013A, a wafer heating device is disclosed, including: a substrate, the substrate includes a first surface, and a wafer bearing area for placing the wafer is included on the first surface; a heating component, the heating component includes an induction coil, and the induction coil at least includes: a first coil distributed in a ring shape and a second coil electrically connected to the first coil and located inside the first coil, so that the heat generated by the first coil is more uniform.

[0004] However, in this device, although the heating function of the heating component can be realized, its heating surface is directly in contact with the air. Therefore, in the whole heating process, it is easy to cause insecure adhesion at high temperature (that is, under the rotation condition, partial displacement is likely to occur during rotation), the phenomenon of uneven heating surface will occur, and in a high-temperature environment, it will also cause direct contact with other components in the air and generate oxidation, affecting the oxidation efficiency of the wafer sheet. Summary of the Utility Model

[0005] Aiming at the deficiencies of the prior art, the purpose of the utility model is to provide a backplane heating device suitable for wafer sheets, which solves the above technical problems existing in the prior art.

[0006] The purpose of the utility model can be realized by the following technical solutions:

[0007] A backplane heating device suitable for wafer sheets includes a contact body, a heating component, and a cooling component.

[0008] The contact body has a cylindrical structure, and a cavity is provided at the rear end of the cylindrical structure. At the same time, an adsorption surface is provided on the outer facade of the front end of the contact body, so that the adsorption surface forms a fitting adsorption on the wafer sheet.

[0009] The heating component is embedded in the rear cavity where the contact body is located. When heating the heating component, heating of the adsorption surface where the contact body is located is synchronously formed, and an inert gas is filled between the adsorption surface and the attachment surface of the wafer sheet.

[0010] The cooling component is located in the rear cavity of the contact body.

[0011] Further, the adsorption surface includes an air inlet hole and an air outlet hole, and is located on the front end surface of the contact body to form a ventilation groove communicating with the air inlet hole and the air outlet hole. When the wafer is attached to the surface of the ventilation groove, a negative pressure adsorption is formed in the ventilation groove at this time, so as to realize the adsorption of the wafer on the adsorption surface of the contact body.

[0012] Further, the air inlet hole and the air outlet hole are located at the middle position where the adsorption surface is located. At the same time, the outer periphery of the ventilation groove is distributed in a circular and radial manner, and is respectively communicated with the air inlet hole and the air outlet hole through branch grooves.

[0013] Further, the air inlet hole and the air outlet hole respectively extend into the cavity at the rear end of the contact body through air pipes.

[0014] Further, a sealing ring is arranged on the outer periphery where the adsorption surface is located, and the sealing ring is used to wrap the adsorption surface externally.

[0015] Further, the heating assembly is provided with two semi-circular structures and is respectively fixed in the cavity at the rear end of the contact body.

[0016] Further, the cooling assembly is provided with two groups. One group is annularly arranged on the inner wall of the contact body cavity to wrap the outer periphery of the heating assembly, and the other group is annularly arranged on the upper edge of the outer wall of the contact body.

[0017] The beneficial effects of the present utility model are as follows:

[0018] 1. The adsorption surface adopted by the present device is provided with a ventilation groove, and argon gas is introduced into the ventilation groove, which can isolate the direct contact between the adsorption surface and the air, ensuring the integrity of its surface. At the same time, the ventilation groove can also effectively adsorb the wafer as an adsorption surface, so as to meet the uniformity of wafer surface heating during the entire rotation process of the wafer.

[0019] 2. The cooling assembly adopted by the present device is provided with two groups. One group is annularly arranged on the inner wall of the contact body cavity to wrap the outer periphery of the heating assembly, and the other group is annularly arranged on the upper edge of the outer wall of the contact body, that is, a dual cooling assembly is adopted, which can effectively reduce the overheating influence on adjacent components.

[0020] 3. The heating assembly adopted by the present device is provided with two semi-circular structures and is respectively fixed in the cavity at the rear end of the contact body (showing a left-right distribution), which is convenient for assembly and disassembly, has higher assembly performance, and at this time, the fitting surface can cover the entire end surface of the front end of the contact body, so that the surface of the wafer in contact with it is uniformly heated. Description of the Drawings

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art.

[0022] Figure 1 is a schematic diagram of the overall structure of an embodiment of the present utility model;

[0023] Figure 2 is a schematic diagram of the front end face structure of an embodiment of the present utility model;

[0024] Figure 3 is a schematic diagram of the rear end face structure of an embodiment of the present utility model;

[0025] Figure 4 is a schematic diagram of the overall structure of the contact body of an embodiment of the present utility model;

[0026] Figure 5 is a schematic diagram of the heating component structure of an embodiment of the present utility model;

[0027] Figure 6 is a schematic diagram of the morphological structure of one group of cooling components of an embodiment of the present utility model;

[0028] Figure 7 is a schematic diagram of the overall front cross-sectional structure of an embodiment of the present utility model;

[0029] Figure 8 is a schematic diagram of the overall side cross-sectional structure of an embodiment of the present utility model. Detailed implementation manners

[0030] Next, the technical solutions in the embodiments of the present utility model will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present utility model. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without creative efforts shall fall within the protection scope of the present utility model.

[0031] As Figure 1 shown, an embodiment of the present utility model provides a backplane heating device applicable to a wafer, including a contact body 1, a heating component 2, and a cooling component 3.

[0032] The contact body 1 has a cylindrical structure, and a cavity is provided at the rear end of the cylindrical structure. Its front end is a flat structure. At the same time, an adsorption surface is provided on the outer facade of the front end of the contact body 1, so that the adsorption surface forms a fitting adsorption of the wafer. As Figure 5 shown, the heating component 2 is provided with two semi-circular structures and is respectively fixed in the cavity at the rear end of the contact body 1. For the convenience of assembly and disassembly and higher assembly performance, and at this time, the fitting surface can cover the entire end face of the front end of the contact body 1, so that the surface of the wafer in contact with it is uniformly heated.

[0033] As Figure 2 , Figure 4As shown, the adsorption surface includes an air inlet hole 111 and an air outlet hole 112 (at this time, the air inlet hole 111 and the air outlet hole 112 penetrate through the front end surface of the contact body 1), and a ventilation groove 113 communicating with the air inlet hole 111 and the air outlet hole 112 is formed on the front end surface of the contact body 1 (at this time, the ventilation groove 113 is an open groove). When the wafer is attached to the surface of the ventilation groove 113, a negative pressure adsorption is formed in the ventilation groove 113, so as to realize the adsorption of the wafer on the adsorption surface of the contact body 1. The negative pressure at this time is controlled at 0.1 - 0.5 MPa. Since the ventilated part of the ventilation groove 113 is in direct contact with the surface of the wafer, argon gas (inert gas) is introduced into the ventilation groove 3 at this time to reduce the oxidation reaction between the surface of the wafer and the air in a high-temperature environment.

[0034] As Figure 7 、 Figure 8 shown, the air inlet hole 111 and the air outlet hole 112 are located at the middle position of the adsorption surface, and the air inlet hole 111 and the air outlet hole 112 extend to the cavity at the rear end of the contact body 1 through the air pipes 114 respectively, and are communicated with an external vacuum generating device.

[0035] At the same time, a circular radial distribution is presented on the outer periphery of the ventilation groove 3 (and the ventilation groove 3 located in the outermost layer presents a circular structure), and is communicated with the air inlet hole 111 and the air outlet hole 112 through branch grooves respectively. That is, when the air inlet hole 111 is ventilated, it flows out from the air outlet hole 112 through the channel formed when contacting the wafer through the ventilation groove 113. Such a circularly radially distributed ventilation groove 113 can be realized.

[0036] A sealing ring 101 is arranged on the outer periphery of the adsorption surface, and the sealing ring 101 is formed to wrap the adsorption surface externally. That is, when the wafer is adsorbed, the sealing ring 101 can ensure the adsorption airtightness of the outer edge of the wafer.

[0037] As Figure 3 、 Figure 6 shown, the cooling component 3 is located in the cavity at the rear end of the contact body 1, and two groups are provided, which are respectively arranged annularly on the inner wall and the outer edge of the cavity of the contact body 1. During specific operation, one group is arranged annularly on the inner wall of the cavity of the contact body 1 to wrap the outer periphery of the heating component. At this time, it can effectively reduce the temperature rise of the edge position of the contact body 1 caused by the heating component 2. That is, at this time, it can ensure the local heating at the position in the middle of the contact body 1 (i.e., the adsorption surface), and will not cause the temperature rise of other adjacent components due to the overheating of the edge position of the contact body 1, affecting the performance. The other group is arranged annularly on the upper edge of the outer wall of the contact body 1, and further reduces the overheating damage of the upper edge of the contact body 1 at this time.

[0038] The foregoing has shown and described the basic principles, main features and advantages of the present utility model. Those skilled in the art should understand that the present utility model is not limited by the above embodiments, and what is described in the above embodiments and the specification is only to illustrate the principle of the present utility model. Without departing from the spirit and scope of the present utility model, the present utility model will have various changes and improvements, and all these changes and improvements fall within the scope of the present utility model claimed.

Claims

1. A backplane heating device applicable to a wafer, comprising a contact body (1), a heating component (2), and a cooling component (3), characterized in that the contact body (1) has a cylindrical structure, and a cavity is provided at the rear end of the cylindrical structure. At the same time, an adsorption surface is provided on the front outer surface of the contact body (1), so that the adsorption surface forms a fitting adsorption of the wafer, and an inert gas is filled between the adsorption surface and the attachment surface of the wafer; the heating component (2) is embedded in the rear cavity where the contact body (1) is located. When the heating component (2) is heated, the adsorption surface where the contact body (1) is located is heated synchronously; the cooling component (3) is located in the cavity at the rear end of the contact body (1).

2. The backplane heating device applicable to a wafer according to claim 1, wherein The adsorption surface includes an air inlet hole (111) and an air outlet hole (112), and a ventilation groove (113) communicating with the air inlet hole (111) and the air outlet hole (112) is formed on the front end surface of the contact body (1). When the wafer is attached to the surface of the ventilation groove (113), a negative pressure adsorption is formed in the ventilation groove (113) at this time, so as to realize the adsorption of the wafer on the adsorption surface of the contact body (1).

3. The backplane heating device applicable to a wafer according to claim 2, wherein The air inlet hole (111) and the air outlet hole (112) are located at the middle position of the adsorption surface. At the same time, the outer periphery of the ventilation groove (113) is distributed in a circular and radial manner, and is respectively communicated with the air inlet hole (111) and the air outlet hole (112) through branch grooves.

4. The backplane heating device applicable to a wafer according to claim 2, wherein, The air inlet hole (111) and the air outlet hole (112) extend into the cavity at the rear end of the contact body (1) through air pipes (114) respectively.

5. The backplane heating device applicable to a wafer according to claim 1, wherein, A sealing ring (101) is provided on the outer periphery of the adsorption surface, and the sealing ring (101) forms an outer wrapping of the adsorption surface.

6. The backplane heating device applicable to a wafer according to claim 1, characterized in that, The heating component (2) is provided with two semi-circular structures, which are respectively fixed in the rear cavity of the contact body (1).

7. The backplane heating device applicable to a wafer according to claim 1, characterized in that, The cooling component (3) is provided with two groups. One group is annularly arranged on the inner wall of the cavity of the contact body (1) to form a wrapping of the outer periphery of the heating component (2), and the other group is annularly arranged on the outer wall edge of the contact body (1).

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