Combined passivation back contact solar cell and photovoltaic module
The cross-hatched back-contact solar cell design with polycrystalline and amorphous silicon layers addresses efficiency losses by minimizing shading and recombination, achieving high performance with reduced damage during laser processing.
Patent Information
- Application Number
- CN202422086758.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-27
- Publication Date
- 2025-07-15
- Estimated Expiration
- 2034-08-27
AI Technical Summary
The existing solar cells have high conversion efficiency losses, mainly due to optical and electrical losses, especially gate line light shading and photogenerated carrier recombination in the cell.
The doped layers of opposite conductivity types are adopted with interdigitated distribution, combined with doped polysilicon and doped amorphous silicon layers, to reduce damage to amorphous silicon by laser patterning, and optimize the current collection path through isolation areas and multi-subg gate design.
It effectively reduces gate line occlusion, reduces battery conversion efficiency loss, and improves the overall conversion efficiency of solar cells.
Smart Images
Figure CN223110416U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of solar cells, in particular to a passivated back contact solar cell and a photovoltaic module. Background Art
[0002] At present, the efficiency loss of solar cells is mainly divided into two types: one is optical loss, such as front surface cell reflection loss, grid line shading loss, non-absorption loss in long wavelength bands, etc.; the other is electrical loss, including photogenerated carrier recombination in the cell body and on the surface, contact resistance between the cell and the metal grid line, etc.
[0003] Therefore, how to provide a new type of back contact cell that can minimize the conversion efficiency loss of solar cells is an urgent problem to be solved by those skilled in the art. Summary of the Utility Model
[0004] The purpose of the utility model is to provide a passivated back contact solar cell that can minimize the conversion efficiency loss of solar cells; another purpose of the utility model is to provide a photovoltaic module that can minimize the conversion efficiency loss of solar cells.
[0005] To solve the above technical problems, the utility model provides a passivated back contact solar cell, which includes a substrate, a passivation layer, a first doping layer, a second doping layer, a first electrode and a second electrode;
[0006] The passivation layer is located on the back of the substrate, and both the first doping layer and the second doping layer are located on the surface of the passivation layer facing away from the substrate;
[0007] One side of the back of the substrate is divided into a first electrode region and a second electrode region. The first doping layer is located in the first electrode region, and the second doping layer is located in the second electrode region. The adjacent first doping layer and the second doping layer are distributed in an interdigitated pattern; the conduction types of the first doping layer and the second doping layer are opposite;
[0008] The first doping layer is one of a doped polysilicon layer and a doped amorphous silicon layer, and the second doping layer is the other of the doped polysilicon layer and the doped amorphous silicon layer;
[0009] The first electrode is located on the side of the first doping layer facing away from the substrate and is electrically connected to the first doping layer, and the second electrode is located on the side of the second doping layer facing away from the substrate and is electrically connected to the second doping layer.
[0010] Optionally, the passivation layer includes a first passivation layer and a second passivation layer. The first passivation layer is located in the first electrode region, and the second passivation layer is located in the second electrode region;
[0011] The first doping layer is located on the surface of the first passivation layer facing away from the substrate, and the second doping layer is located on the surface of the second passivation layer facing away from the substrate;
[0012] The first passivation layer is a tunneling passivation layer, and the first doping layer is a doped polysilicon layer; the second passivation layer is an intrinsic amorphous silicon layer, and the second doping layer is a doped amorphous silicon layer.
[0013] Optionally, a current transport layer is further included. The current transport layer is located on the surface of the first doping layer and the second doping layer facing away from the substrate. The first electrode is electrically connected to the first doping layer through the current transport layer, and the second electrode is electrically connected to the second doping layer through the current transport layer.
[0014] Optionally, the current transport layer includes a first current transport layer and a second current transport layer. The first current transport layer is located on the surface of the first doping layer facing away from the substrate, and the second current transport layer is located on the surface of the second doping layer facing away from the substrate. The first current transport layer is one of a silicon nitride layer and a TCO layer, and the second current transport layer is the other of the silicon nitride layer and the TCO layer.
[0015] Optionally, the first doping layer is a doped polysilicon layer, and the first current transport layer is a silicon nitride layer; the second doping layer is a doped amorphous silicon layer, and the second current transport layer is a TCO layer.
[0016] Optionally, the first electrode region and the second electrode region are arranged in an interdigitated pattern. The first electrode region includes a first main chain region and a first branch chain region, and the second electrode region includes a second main chain region and a second branch chain region. The first branch chain region and the second branch chain region are alternately distributed along a first direction;
[0017] The first electrode includes a first sub-grid line, and the second electrode includes a second sub-grid line. Each first branch chain region is provided with a plurality of first sub-grid lines, and the axis of the first sub-grid line is parallel to the long side direction of the first branch chain region; each second branch chain region is provided with a plurality of second sub-grid lines, and the axis of the second sub-grid line is parallel to the long side direction of the second branch chain region.
[0018] Optionally, an isolation region is provided between the first doping layer and the second doping layer.
[0019] Optionally, the isolation region extends to the edge of the substrate.
[0020] Optionally, the isolation region is arranged around the substrate along the edge of the substrate for one week.
[0021] The present utility model also provides a photovoltaic module, which includes the combined passivated back contact solar cell described in any one of the above.
[0022] The combined passivated back contact solar cell provided by the present utility model includes a substrate, a passivation layer, a first doping layer, a second doping layer, a first electrode, and a second electrode; the passivation layer is located on the back surface of the substrate, and both the first doping layer and the second doping layer are located on the surface of the passivation layer facing away from the substrate; one side of the back surface of the substrate is divided into a first electrode region and a second electrode region, the first doping layer is located in the first electrode region, the second doping layer is located in the second electrode region, and the adjacent first doping layer and second doping layer are distributed in an interdigitated manner; the conductive types of the first doping layer and the second doping layer are opposite; the first doping layer is one of a doped polysilicon layer and a doped amorphous silicon layer, and the second doping layer is the other of a doped polysilicon layer and a doped amorphous silicon layer; the first electrode is located on the side of the first doping layer facing away from the substrate and is electrically connected to the first doping layer, and the second electrode is located on the side of the second doping layer facing away from the substrate and is electrically connected to the second doping layer.
[0023] By providing doped layers with an interdigitated distribution and arranging doped layers with opposite conductive types on the back surface of the battery, the shielding of the front surface of the battery by grid lines, solder tapes, etc. can be effectively reduced; since the passivation effect of the doped amorphous silicon layer is better than that of the doped polysilicon layer, but heating during the laser patterning process is likely to damage the amorphous silicon. By providing doped layers of two different materials, namely a doped polysilicon layer and a doped amorphous silicon layer, while ensuring excellent passivation effects, the damage to the amorphous silicon caused by heating during laser patterning can be reduced, so as to comprehensively optimize and reduce the loss of the conversion efficiency of the solar cell, making the solar cell have a high conversion efficiency.
[0024] The present utility model also provides a photovoltaic module, which also has the above beneficial effects and will not be elaborated here. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present utility model or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present utility model. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.
[0026] Figure 1 It is a cross-sectional view of a combined passivated back contact solar cell provided by an embodiment of the present utility model;
[0027] Figure 2 It is a bottom view of a combined passivated back contact solar cell provided by an embodiment of the present utility model.
[0028] In the figure: 1. Substrate, 21. First passivation layer, 22. Second passivation layer, 31. First doping layer, 32. Second doping layer, 41. First current transmission layer, 42. Second current transmission layer, 51. First electrode, 52. Second electrode, 6. Auxiliary gate line, 7. Isolation region, 81. First main chain region, 82. First branched chain region, 91. Second main chain region, 92. Second branched chain region. Detailed implementation manners
[0029] The core of the present utility model is to provide a combined passivation back-contact solar cell. In the prior art, the comprehensive passivation effect of solar cells is relatively low.
[0030] A combined passivation back-contact solar cell provided by the present utility model includes a substrate, a passivation layer, a first doping layer, a second doping layer, a first electrode and a second electrode; the passivation layer is located on the back surface of the substrate, and both the first doping layer and the second doping layer are located on the surface of the passivation layer facing away from the substrate; one side of the back surface of the substrate is divided into a first electrode region and a second electrode region, the first doping layer is located in the first electrode region, the second doping layer is located in the second electrode region, and the adjacent first doping layer and second doping layer are arranged in an interdigitated pattern; the conductive types of the first doping layer and the second doping layer are opposite; the first doping layer is one of a doped polysilicon layer and a doped amorphous silicon layer, and the second doping layer is the other of a doped polysilicon layer and a doped amorphous silicon layer; the first electrode is located on the side of the first doping layer facing away from the substrate and is electrically connected to the first doping layer, and the second electrode is located on the side of the second doping layer facing away from the substrate and is electrically connected to the second doping layer.
[0031] By arranging the doping layers in an interdigitated pattern and setting the doping layers with opposite conductive types on the back surface of the battery, the shielding of the front surface of the battery by grid lines, solder tapes, etc. can be effectively reduced; since the passivation effect of the doped amorphous silicon layer is better than that of the doped polysilicon layer, but heating during the laser patterning process is likely to cause damage to the amorphous silicon. By setting doping layers of two different materials, namely a doped polysilicon layer and a doped amorphous silicon layer, while ensuring excellent passivation effect, the damage to the amorphous silicon caused by heating during laser patterning can be reduced, so as to comprehensively optimize and reduce the loss of the conversion efficiency of the solar cell, making the solar cell have a higher conversion efficiency.
[0032] In order to enable those skilled in the art to better understand the solution of the present utility model, the present utility model will be further described in detail below with reference to the drawings and specific implementation manners. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all of the embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present utility model.
[0033] Embodiment 1
[0034] Please refer toFigure 1 , Figure 1 is a cross-sectional view of a passivated back-contact solar cell provided by an embodiment of the present invention.
[0035] See Figure 1 , in this embodiment, the passivated back-contact solar cell includes a substrate 1, a passivation layer, a first doped layer 31, a second doped layer 32, a first electrode 51, and a second electrode 52; the passivation layer is located on the back surface of the substrate 1, and both the first doped layer 31 and the second doped layer 32 are located on the surface of the passivation layer facing away from the substrate 1; a first electrode region and a second electrode region are defined on one side of the back surface of the substrate 1, the first doped layer 31 is located in the first electrode region, the second doped layer 32 is located in the second electrode region, and the adjacent first doped layer 31 and second doped layer 32 are distributed in an interdigitated manner; the first doped layer 31 and the second doped layer 32 have opposite conductivity types; the first doped layer 31 is one of a doped polysilicon layer and a doped amorphous silicon layer, and the second doped layer 32 is the other of the doped polysilicon layer and the doped amorphous silicon layer; the first electrode 51 is located on the side of the first doped layer 31 facing away from the substrate 1 and is electrically connected to the first doped layer 31, and the second electrode 52 is located on the side of the second doped layer 31 facing away from the substrate 1 and is electrically connected to the second doped layer 32.
[0036] The above substrate 1 is the main structure of the solar cell, and this substrate 1 is usually a doped silicon substrate 1. Of course, in this embodiment, the specific material and doping type of this substrate 1 are not specifically limited and depend on specific circumstances. In this embodiment, an n-type silicon substrate 1 is usually selected as the substrate 1 used in this embodiment.
[0037] The above passivation layer is located on the back surface of the substrate 1, and the doped layer is located on the surface of the passivation layer facing away from the substrate 1. In this embodiment, a first electrode region and a second electrode region are defined on one side of the back surface of the substrate 1, and different electrode structures with opposite conductivity types will be specifically formed in the two electrode regions. In this embodiment, the first doped layer 31 is located on the surface of the passivation layer in the first electrode region facing away from the substrate 1, and the second doped layer 32 needs to be located on the surface of the passivation layer in the second electrode region facing away from the substrate 1. The first doped layer 31 and the second doped layer 32 need to have opposite conductivity types to form a back-contact solar cell. In this embodiment, the adjacent first doped layer 31 and second doped layer 32 need to be distributed in an interdigitated manner to ensure that the current generated in the solar cell can be collected as efficiently as possible. In this embodiment, the above first doped layer 31 and second doped layer 32 are structures in different regions of the same layer.
[0038] In this embodiment, the first doping layer 31 is one of a doped polysilicon layer and a doped amorphous silicon layer, and the second doping layer 32 is the other of the doped polysilicon layer and the doped amorphous silicon layer. And in this embodiment, the doped amorphous silicon layer and the doped polysilicon layer are mixed and matched to achieve the purpose of combined passivation and reduce the damage to amorphous silicon caused by heating during laser patterning.
[0039] Specifically, in this embodiment, the passivation layer includes a first passivation layer 21 and a second passivation layer 22. The first passivation layer 21 is located in the first electrode region, and the second passivation layer 22 is located in the second electrode region. The first passivation layer 21 is one of a tunneling passivation layer and an intrinsic amorphous silicon layer, and the second passivation layer 22 is the other of the tunneling passivation layer and the intrinsic amorphous silicon layer; the first doping layer 31 is located on the surface of the first passivation layer 21 facing away from the substrate 1, and the second doping layer 32 is located on the surface of the second passivation layer 22 facing away from the substrate 1.
[0040] In this embodiment, passivation layers of different materials can also be mixed and matched. Specifically, in this embodiment, the passivation layer specifically includes a first passivation layer 21 and a second passivation layer 22. The passivation layer located in the first electrode region is the first passivation layer 21, and the passivation layer located in the second electrode region is the second passivation layer 22. Correspondingly, the above-mentioned first doping layer 31 will be located on the surface of the first passivation layer 21 facing away from the substrate 1, and the second doping layer 32 will be located on the surface of the second passivation layer 22 facing away from the substrate 1.
[0041] In this embodiment, the first passivation layer 21 is one of a tunneling passivation layer and an intrinsic amorphous silicon layer, and the second passivation layer 22 is the other of the tunneling passivation layer and the intrinsic amorphous silicon layer. That is, in this embodiment, the tunneling passivation layer and the intrinsic amorphous silicon layer need to be mixed and matched to improve the passivation effect.
[0042] Specifically, in this embodiment, the first passivation layer 21 is a tunneling passivation layer, and the first doping layer 31 is a doped polysilicon layer; the second passivation layer 22 is an intrinsic amorphous silicon layer, and the second doping layer 32 is a doped amorphous silicon layer. That is, in the first electrode region of this embodiment, the tunneling passivation layer serving as the passivation layer is in contact with the doped polysilicon layer serving as the doping layer; while in the second electrode region of this embodiment, the intrinsic amorphous silicon layer serving as the passivation layer is in contact with the doped amorphous silicon layer serving as the doping layer. The above structure can ensure good adaptability between the passivation layer and the doping layer and reduce the defects therebetween. It should be noted that in this embodiment, the doping types of the first doping layer 31 and the second doping layer 32 are not specifically limited. Therefore, in this embodiment, the doping layer using doped polysilicon can be defined as the first doping layer 31, and the doping layer using doped amorphous silicon can be defined as the second doping layer 32, and the above electrode regions, passivation layers, and subsequent current transport layers can be defined correspondingly. In this embodiment, the first doping layer 31 can be an n-type doped polysilicon layer (n-poly layer), and the second doping layer 32 can be a p-type doped amorphous silicon layer (P-type a-si).
[0043] In this embodiment, the electrode located in the first electrode region and electrically connected to the first doping layer 31 is defined as the first electrode 51, and the electrode located in the second electrode region and electrically connected to the second doping layer 32 is defined as the second electrode 52. Both the first electrode 51 and the second electrode 52 can include at least one main grid line and multiple sub-grid lines 6 to collect the current generated by the solar cell. In this embodiment, the first electrode 51 is located on the side of the first doping layer 31 facing away from the substrate 1 and is electrically connected to the first doping layer 31, and the second electrode 52 is located on the side of the second doping layer 32 facing away from the substrate 1 and is electrically connected to the second doping layer 32.
[0044] In this embodiment, the jointly passivated back contact solar cell may further include a current transport layer. The current transport layer is located on the surface of the first doping layer 31 and the second doping layer 32 facing away from the substrate 1. The first electrode 51 is electrically connected to the first doping layer 31 through the current transport layer, and the second electrode 52 is electrically connected to the second doping layer 32 through the current transport layer. The above current transport layer is used to collect the current generated in the solar cell, enabling the electrodes to collect the current generated by the solar cell more fully.
[0045] Specifically, in this embodiment, the current transport layer includes a first current transport layer 41 and a second current transport layer 42. The first current transport layer 41 is located in the first electrode region, specifically on the surface of the first doping layer 31 facing away from the substrate 1. The second current transport layer 42 is located in the second electrode region, specifically on the surface of the second doping layer 32 facing away from the substrate 1. The first current transport layer 41 is one of a silicon nitride layer and a TCO (Transparent Conductive Oxide) layer, and the second current transport layer 42 is the other of the silicon nitride layer and the TCO layer.
[0046] In this embodiment, current transport layers of different materials can also be mixed and matched. Specifically, the current transport layer in the first electrode region is the first current transport layer 41, and the current transport layer in the second electrode region is the second current transport layer 42. Correspondingly, the above-mentioned first current transport layer 41 will be located on the surface of the first doping layer 31 facing away from the substrate 1, and the second current transport layer 42 will be located on the surface of the second doping layer 32 facing away from the substrate 1. In this embodiment, the silicon nitride layer and the TCO layer need to be mixed and matched.
[0047] Specifically, in this embodiment, the first doping layer 31 is a doped polysilicon layer, and the first current transport layer 41 is a silicon nitride layer; the second doping layer 32 is a doped amorphous silicon layer, and the second current transport layer 42 is a TCO layer. That is, in the first electrode region of this embodiment, the silicon nitride layer serving as the current transport layer is in contact with the doped polysilicon layer serving as the doping layer; and in the second electrode region of this embodiment, the TCO layer serving as the current transport layer is in contact with the doped amorphous silicon layer serving as the doping layer. The above structure can ensure good compatibility between the current transport layer and the doping layer, and reduce the defects between the two.
[0048] A passivation layer can be provided on the front surface of the substrate 1 in this embodiment to passivate the front surface of the substrate 1. The specific structure of the passivation layer located on the front surface can be set according to the actual situation. It can specifically be a stacked structure of an alumina layer and a silicon nitride layer, etc., and no specific limitation is made here.
[0049] A jointly passivated back-contact solar cell provided in this embodiment can effectively reduce the shielding of the front of the cell by grid lines, solder tapes, etc. by arranging doped layers in a finger-like distribution and setting doped layers with opposite conductivity types on the back of the cell. Since the passivation effect of the doped amorphous silicon layer is better than that of the doped polycrystalline silicon layer, but heating during the laser patterning process is likely to cause damage to the amorphous silicon. By arranging doped layers of two different materials, namely the doped polycrystalline silicon layer and the doped amorphous silicon layer, it is possible to reduce the damage to the amorphous silicon caused by heating during laser patterning while ensuring excellent passivation effects, so as to comprehensively optimize and reduce the loss of the conversion efficiency of the solar cell, making the solar cell have a high conversion efficiency.
[0050] Specific details about a jointly passivated back-contact solar cell provided by the present utility model will be introduced in detail in the following embodiments of the utility model.
[0051] Embodiment 2
[0052] Please refer to Figure 2 , Figure 2 which is a bottom view of a jointly passivated back-contact solar cell provided by an embodiment of the present utility model.
[0053] Different from the above embodiments of the utility model, the embodiments of the present utility model further define the structure of the jointly passivated back-contact solar cell on the basis of the above embodiments of the utility model. The rest of the content has been introduced in detail in the above embodiments of the utility model and will not be elaborated here.
[0054] See Figure 2 , in this embodiment, an isolation region 7 is provided between the first doped layer 31 and the second doped layer 32. The above first doped layer 31 and second doped layer 32 are isolated by arranging the isolation region 7, that is, the GAP region. The isolation region 7 is usually filled with an insulating material to isolate the first doped layer 31 and the second doped layer 32. The specific material of the isolation region 7 can be set according to the actual situation as long as it can achieve the above effects, and no specific limitation is made here.
[0055] In order to isolate the back structure of the solar cell from its front structure, the above isolation region 7 can extend to the edge of the substrate 1 to achieve edge isolation of the front and back of the solar cell through this isolation structure. Further, in this embodiment, the isolation region 7 can be arranged around the substrate 1 along the edge of the substrate 1 for one week, that is, the isolation region 7 will be arranged on the entire edge of the back of the solar cell to form a ring-shaped isolation region 7 to achieve edge isolation of the front and back of the solar cell.
[0056] In this embodiment, the first electrode region and the second electrode region are arranged in an interdigitated pattern. The first electrode region includes a first main chain region 81 and a first branched chain region 82, and the second electrode region includes a second main chain region 91 and a second branched chain region 92. The first branched chain region 82 and the second branched chain region 92 are alternately distributed along a first direction. The first electrode 51 includes a first sub-grid line, and the second electrode 52 includes a second sub-grid line. Each first branched chain region 82 is provided with a plurality of first sub-grid lines, and the axis of each first sub-grid line is parallel to the long side direction of the first branched chain region 82. Each second branched chain region 92 is provided with a plurality of second sub-grid lines, and the axis of each second sub-grid line is parallel to the long side direction of the second branched chain region 92.
[0057] Since the first electrode region and the second electrode region are arranged in an interdigitated pattern, and the interdigitated pattern is usually formed by a main chain region and multiple branched chain regions, and usually the multiple branched chain regions are arranged in parallel, and the main chain region is used to connect the multiple branched chain regions. In this embodiment, the first electrode region includes a first main chain region 81 and multiple first branched chain regions 82, and the second electrode region includes a second main chain region 91 and a second branched chain region 92. For a set of the first electrode region and the second electrode region arranged in an interdigitated pattern, its first branched chain region 82 and the second branched chain region 92 will be alternately distributed along a first direction, and correspondingly, on the entire back surface of the solar cell, the first main chain region 81 and the second main chain region 91 will be alternately arranged along a second direction, and the above-mentioned first direction and the second direction are perpendicular.
[0058] In this embodiment, the first electrode 51 usually includes a first main grid line and multiple first sub-grid lines, and the second electrode 52 usually includes a second main grid line and multiple second sub-grid lines. The above-mentioned first main grid line is usually arranged in the first main chain region 81, the first sub-grid line is usually arranged in the first branched chain region 82, the second main grid line is usually arranged in the second main chain region 91, and the second sub-grid line is usually arranged in the second branched chain region 92. Specifically, in this embodiment, a first branched chain region 82 is provided with a plurality of first sub-grid lines. Usually, the first sub-grid lines are parallel to each other and their axes are along the long side direction of the first branched chain region 82, that is, the second direction. And a second branched chain region 92 is provided with a plurality of second sub-grid lines. Usually, the second sub-grid lines are parallel to each other and their axes are along the long side direction of the second branched chain region 92, that is, the second direction. By providing a plurality of sub-grid lines 6 in each branched chain region, the density of the sub-grid lines 6 can be increased without changing the structures such as the passivation layer and the doping layer, thereby reducing the carrier collection path and reducing recombination.
[0059] Specifically, in this embodiment, the first electrode 51 is located on the first doping layer 31. In the first branch region 82, the number of sub-grid lines 6 of the first electrode 51 is generally between 2 and 10, distributed on the first doping layer 31 along the first direction and arranged at intervals along the second direction. Similarly, the second electrode 52 is located on the second doping layer 32. In the second branch region 92, the number of sub-grid lines 6 of the second electrode 52 is also generally between 2 and 10, distributed on the second doping layer 32 along the first direction and arranged at intervals along the second direction. The multi-sub-grid design of this embodiment can reduce the carrier collection path and reduce recombination.
[0060] A combined passivated back-contact solar cell provided in this embodiment realizes edge isolation between the front and back sides of the solar cell by setting the isolation region 7; the multi-sub-grid design can reduce the carrier collection path and reduce recombination.
[0061] Embodiment III
[0062] A combined passivated back-contact solar cell provided in this embodiment specifically selects an N-type silicon wafer as the substrate 1. The first passivation layer 21 is a tunneling passivation layer of silicon oxide, the first doping layer 31 is a doped polysilicon layer N-poly-si, the first electrode 51 is printed on the first doping layer 31, the second passivation layer 22 is an intrinsic amorphous silicon layer i-type a-si, the second doping layer 32 is a doped polysilicon layer P-type a-si, and the second electrode 52 is printed on the second doping layer 32.
[0063] The above-mentioned first doping layer 31 has a width of 0.3 mm - 2 mm in the first direction and a width of 5 mm - 30 mm in the second direction. The number of sub-grid lines 6 of the first electrode 51 is 1 - 10, and the width of each sub-grid line 6 is 5 μm - 50 μm, distributed on the first doping layer 31.
[0064] The above-mentioned second doping layer 32 has a width of 0.3 mm - 2 mm in the first direction and a width of 5 mm - 30 mm in the second direction. The number of sub-grid lines 6 of the second electrode 52 is 1 - 10, and the width of each sub-grid line 6 is 5 μm - 50 μm, distributed on the second doping layer 32.
[0065] This embodiment adopts combined passivated contact, which can first significantly improve surface passivation; uses a multi-sub-grid electrode design to optimize the carrier transport path, reduce recombination, and ultimately improve the conversion efficiency.
[0066] Embodiment IV
[0067] Next, the photovoltaic module provided by the embodiments of the present invention will be introduced. The photovoltaic module described below can be mutually referred to with the combined passivated back-contact solar cell described above.
[0068] In this embodiment, the photovoltaic module includes a combined passivated back-contact solar cell provided in any of the above-mentioned utility model embodiments. The specific structure of the combined passivated back-contact solar cell has been described in detail in the above-mentioned utility model embodiments and will not be elaborated here. For the remaining structures of the photovoltaic module, such as solder ribbons, busbars, encapsulant films, etc., reference can be made to the prior art and will not be elaborated here.
[0069] Since the photovoltaic module provided in this embodiment specifically uses the combined passivated back-contact solar cell provided in the above embodiment, this photovoltaic module can have a higher conversion efficiency.
[0070] In this specification, the various embodiments are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. For the same or similar parts among the various embodiments, reference can be made to each other.
[0071] Finally, it should also be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or further includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "including one..." does not exclude the existence of additional identical elements in the process, method, article or device including the said element.
[0072] The above has provided a detailed introduction to a combined passivated back-contact solar cell and a photovoltaic module provided by the present utility model. Specific examples are used in this article to elaborate on the principle and implementation manner of the present utility model. The description of the above embodiments is only used to help understand the method and its core idea of the present utility model. It should be noted that for those of ordinary skill in the art in this technical field, without departing from the principle of the present utility model, several improvements and modifications can be made to the present utility model, and these improvements and modifications also fall within the protection scope of the claims of the present utility model.
Claims
1. A passivated rear contact solar cell, characterized in that, It includes a substrate, a passivation layer, a first doped layer, a second doped layer, a first electrode, and a second electrode; The passivation layer is located on the back surface of the substrate, and both the first doped layer and the second doped layer are located on the surface of the passivation layer facing away from the substrate; On one side of the back surface of the substrate, a first electrode region and a second electrode region are defined. The first doped layer is located in the first electrode region, and the second doped layer is located in the second electrode region. The adjacent first doped layer and second doped layer are distributed in an interdigitated pattern; the conduction types of the first doped layer and the second doped layer are opposite; The first doped layer is one of a doped polysilicon layer and a doped amorphous silicon layer, and the second doped layer is the other of the doped polysilicon layer and the doped amorphous silicon layer; The first electrode is located on the side of the first doped layer facing away from the substrate and is electrically connected to the first doped layer, and the second electrode is located on the side of the second doped layer facing away from the substrate and is electrically connected to the second doped layer.
2. The passivated back-contact solar cell according to claim 1, wherein The passivation layer includes a first passivation layer and a second passivation layer. The first passivation layer is located in the first electrode region, and the second passivation layer is located in the second electrode region; The first doped layer is located on the surface of the first passivation layer facing away from the substrate, and the second doped layer is located on the surface of the second passivation layer facing away from the substrate; The first passivation layer is a tunneling passivation layer, and the first doped layer is a doped polysilicon layer; the second passivation layer is an intrinsic amorphous silicon layer, and the second doped layer is a doped amorphous silicon layer.
3. The passivated back-contact solar cell according to claim 1, wherein, It further includes a current transmission layer. The current transmission layer is located on the surfaces of the first doped layer and the second doped layer facing away from the substrate. The first electrode is electrically connected to the first doped layer through the current transmission layer, and the second electrode is electrically connected to the second doped layer through the current transmission layer.
4. The passivated back-contact solar cell according to claim 3, characterized in that, The current transmission layer includes a first current transmission layer and a second current transmission layer. The first current transmission layer is located on the surface of the first doped layer facing away from the substrate, and the second current transmission layer is located on the surface of the second doped layer facing away from the substrate. The first current transmission layer is one of a silicon nitride layer and a TCO layer, and the second current transmission layer is the other of the silicon nitride layer and the TCO layer.
5. The passivated back-contact solar cell according to claim 4, wherein The first doped layer is a doped polysilicon layer, and the first current transmission layer is a silicon nitride layer; the second doped layer is a doped amorphous silicon layer, and the second current transmission layer is a TCO layer.
6. The passivated back contact solar cell according to claim 1, characterized in that, The first electrode region and the second electrode region are distributed in an interdigitated pattern. The first electrode region includes a first main chain region and a first branch chain region, and the second electrode region includes a second main chain region and a second branch chain region. The first branch chain region and the second branch chain region are alternately distributed along a first direction; The first electrode includes a first sub-grid line, and the second electrode includes a second sub-grid line. Each first branch chain region is provided with a plurality of first sub-grid lines, and the axis of the first sub-grid line is parallel to the long side direction of the first branch chain region; each second branch chain region is provided with a plurality of second sub-grid lines, and the axis of the second sub-grid line is parallel to the long side direction of the second branch chain region.
7. The passivated back-contact solar cell according to claim 1, wherein An isolation region is provided between the first doping layer and the second doping layer.
8. The passivated back contact solar cell according to claim 7, wherein The isolation region extends to the edge of the substrate.
9. The passivated back-contact solar cell according to claim 8, wherein The isolation region is disposed along the edge of the substrate to surround the substrate in a circle.
10. A photovoltaic module, characterized in that, Comprising the combined passivated back contact solar cell according to any one of claims 1 to 9.