Four-end laminated photovoltaic module and photovoltaic system

Abstract

The utility model provides a four-end laminated photovoltaic assembly and a photovoltaic system, and relates to the field of photovoltaic technology. The four-end laminated photovoltaic module comprises a perovskite solar cell and a crystalline silicon solar cell which are arranged in a laminated manner. The crystalline silicon solar cell comprises a first side close to the perovskite solar cell and a second side opposite to the first side; only the first side of the crystalline silicon solar cell is provided with a collector grid line. Or, the second side and the first side of the crystalline silicon solar cell are both provided with the current collection grid lines, and the number of the current collection grid lines on the first side is larger than that of the current collection grid lines on the second side. The influence of the collector grid lines on the backlight side of the crystalline silicon solar cell on the light absorption effect of the backlight side is reduced, the advantage that the backlight side of the crystalline silicon solar cell is almost not shielded in the normal working process of the four-end laminated photovoltaic module is fully played, the light absorption effect of the backlight side of the crystalline silicon solar cell is obviously improved, and the service life of the crystalline silicon solar cell is prolonged. And the generating capacity of the four-end laminated photovoltaic module is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of photovoltaics, and particularly relates to a four-terminal stacked photovoltaic module and a photovoltaic system. Background Art

[0002] At present, the conversion efficiency of crystalline silicon solar cells has reached more than 27%, approaching its limit efficiency, and the improvement space is relatively low. With the rapid development of perovskite solar cell technology, and the perovskite / crystalline silicon stacked solar cell can exceed the theoretical limit efficiency of crystalline silicon solar cells, so it has certain application prospects.

[0003] In the existing stacked solar cells, usually the crystalline silicon solar cell is located on the backlight side of the perovskite solar cell. Due to the occlusion of the perovskite solar cell to the crystalline silicon solar cell, the power generation of the stacked solar cell formed based on the existing crystalline silicon solar cell structure needs to be improved. Summary of the Utility Model

[0004] The utility model provides a four-terminal stacked photovoltaic module and a photovoltaic system, aiming to solve the problem of low power generation of the existing stacked solar cells.

[0005] In the first aspect of the utility model, a four-terminal stacked photovoltaic module is provided, which includes:

[0006] A perovskite solar cell and a crystalline silicon solar cell stacked;

[0007] The crystalline silicon solar cell includes: a first side close to the perovskite solar cell and a second side opposite to the first side; only the first side of the crystalline silicon solar cell is provided with a collector grid line; or, both the second side and the first side of the crystalline silicon solar cell are provided with collector grid lines, and the number of collector grid lines on the first side is greater than the number of collector grid lines on the second side.

[0008] In the embodiment of the present utility model, the crystalline silicon solar cell is provided with collecting grid lines only on the first side; or, both the second side and the first side of the crystalline silicon solar cell are provided with collecting grid lines, and the number of collecting grid lines on the first side is greater than the number of collecting grid lines on the second side. During the normal operation of the four-terminal stacked photovoltaic module, since the perovskite solar cell is usually arranged on the light-facing side of the crystalline silicon solar cell, therefore, during the normal operation, the first side here is the light-facing side of the crystalline silicon solar cell, and the second side is the backlight side of the crystalline silicon solar cell. That is to say, during the normal operation of the four-terminal stacked photovoltaic module of the present application, there is almost no blockage on the backlight side of the crystalline silicon solar cell. Therefore, no collecting grid lines are arranged on the backlight side of the crystalline silicon solar cell, or the number of collecting grid lines arranged on the backlight side of the crystalline silicon solar cell is less than the number of collecting grid lines arranged on the light-facing side of the crystalline silicon solar cell, reducing the influence of the collecting grid lines on the backlight side of the crystalline silicon solar cell on the light absorption effect of the backlight side, and giving full play to the advantage that there is almost no blockage on the backlight side of the crystalline silicon solar cell during the normal operation of the four-terminal stacked photovoltaic module, significantly increasing the light absorption effect of the backlight side of the crystalline silicon solar cell, and further improving the power generation of the four-terminal stacked photovoltaic module. Moreover, the number of collecting grid lines on the first side of the crystalline silicon solar cell is greater than the number of collecting grid lines on the second side. There are more collecting grid lines on the first side, reflecting more light back to the perovskite solar cell, thereby increasing the current of the perovskite solar cell. Therefore, the power generation efficiency of the perovskite solar cell can be improved. At the same time, the preparation processes of the perovskite solar cell and the crystalline silicon solar cell in the four-terminal stacked photovoltaic module are independent of each other. The stacked photovoltaic module prepared by using the respective optimal process conditions is better, and the preparation is relatively simple.

[0009] Optionally, the coverage area of the collecting grid lines on the first side is greater than the coverage area of the collecting grid lines on the second side.

[0010] Optionally, the perovskite solar cell includes: a perovskite layer, and the band gap of the perovskite layer is 1.6 eV to 1.8 eV.

[0011] Optionally, the crystalline silicon solar cell is provided with collecting grid lines of a first polarity and collecting grid lines of a second polarity only on the first side, the first polarity and the second polarity are opposite, and the distance between adjacent collecting grid lines of the same polarity is greater than or equal to 0.9 mm; or,

[0012] Both the second side and the first side of the crystalline silicon solar cell are provided with collecting grid lines, and the distance between adjacent collecting grid lines on the first side is greater than or equal to 0.85 mm.

[0013] Optionally, the crystalline silicon solar cell further includes: a bus bar grid line located on the first side and electrically connected to the collecting grid lines on the first side, and the total number of the bus bar grid lines on the first side is 16 to 24.

[0014] Optionally, a first encapsulation layer is provided on the first side of the crystalline silicon solar cell, and the thickness of the first encapsulation layer is greater than or equal to 0.3 mm.

[0015] Optionally, the tandem photovoltaic module further includes: a backsheet glass and a junction box;

[0016] The crystalline silicon solar cell is located between the perovskite solar cell and the backsheet glass;

[0017] The junction box is located on the side of the backsheet glass away from the crystalline silicon solar cell;

[0018] The orthographic projection of the junction box on the backsheet glass does not overlap with the orthographic projection of the crystalline silicon solar cell on the backsheet glass.

[0019] Optionally, the perovskite solar cell is connected in parallel with the crystalline silicon solar cell.

[0020] In a third aspect of the present invention, a photovoltaic system is provided, including: a plurality of any one of the aforementioned four-terminal tandem photovoltaic modules; in the photovoltaic system, the crystalline silicon solar cell is closer to the earth's core than the perovskite solar cell;

[0021] The installation angle of the photovoltaic system is greater than the optimal installation angle of the location where the photovoltaic system is located and less than or equal to 90°.

[0022] Optionally, the difference between the installation angle of the photovoltaic system and the optimal installation angle is greater than or equal to 5°.

[0023] The above four-terminal tandem photovoltaic module and photovoltaic system have the same or similar beneficial effects. To avoid repetition, they are not described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0025] Figure 1 FIG. shows a partial structural schematic diagram of a four-terminal tandem photovoltaic module in an embodiment of the present invention;

[0026] Figure 2 FIG. shows a schematic diagram of the electrode structure on the first side of a crystalline silicon solar cell in an embodiment of the present invention;

[0027] Figure 3 It shows a schematic diagram of the electrode structure on the second side of a crystalline silicon solar cell in an embodiment of the present invention;

[0028] Figure 4 It shows a schematic diagram of the electrode structure on the first side of another crystalline silicon solar cell in an embodiment of the present invention;

[0029] Figure 5 It shows a schematic diagram of the installation of a photovoltaic system in an embodiment of the present invention;

[0030] Figure 6 It shows a partial structural schematic diagram of a stacked photovoltaic module in a comparative example.

[0031] Explanation of the drawing reference numerals:

[0032] 1 - perovskite solar cell, 2 - first encapsulation layer, 3 - crystalline silicon solar cell, 31 - first side of the crystalline silicon solar cell, 32 - second side of the crystalline silicon solar cell, 4 - second encapsulation layer, 5 - backplane glass, 6 - light, 7 - installation surface of the photovoltaic system. Detailed implementation manners

[0033] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without making creative efforts shall fall within the protection scope of the present invention.

[0034] The present invention provides a four-terminal stacked photovoltaic module, and the four-terminal stacked photovoltaic module includes: a perovskite solar cell and a crystalline silicon solar cell stacked. The crystalline silicon solar cell contains a silicon substrate, and the doping type, crystal type, etc. of the silicon substrate are not specifically limited.

[0035] The utility model person found that in the related art, the main reason for the power generation of the tandem photovoltaic module formed based on the existing crystalline silicon solar cell structure to be improved is that: in order to reduce the light shielding of the collector grid lines, during normal operation, there are no collector grid lines on the light-facing side of the existing crystalline silicon solar cell structure, and there are only collector grid lines on the backlight side. Or, there are collector grid lines on both the light-facing side and the backlight side of the existing crystalline silicon solar cell structure, but the number of collector grid lines on the backlight side is greater than the number of collector grid lines on the light-facing side, that is, during normal operation, the number of collector grid lines on the backlight side of the crystalline silicon solar cell is relatively large. However, in the tandem photovoltaic module, the perovskite solar cell will block the light-facing side of the crystalline silicon solar cell, while there is almost no blockage on the backlight side of the crystalline silicon solar cell. Therefore, in the tandem photovoltaic module formed based on the existing crystalline silicon solar cell structure, it is equivalent to that the relatively large number of collector grid lines on the backlight side of the crystalline silicon solar cell affects its light absorption effect, so the power generation of the tandem photovoltaic module formed based on the existing crystalline silicon solar cell structure in the related art is poor.

[0036] To solve the above technical problems, in this application, the crystalline silicon solar cell 3 includes: a first side 31 close to the perovskite solar cell 1 and a second side 32 opposite to the first side 31. The crystalline silicon solar cell has collector grid lines only on the first side; or, referring to Figure 1, the second side 32 and the first side 31 of the crystalline silicon solar cell 3 are both provided with collector grid lines 33, and the number of collector grid lines 33 on the first side 31 is greater than the number of collector grid lines 33 on the second side 32. During the normal operation of the four-terminal stacked photovoltaic module, since the perovskite solar cell 1 is usually arranged on the light-facing side of the crystalline silicon solar cell 3, during normal operation, the first side 31 here is the light-facing side of the crystalline silicon solar cell 3, and the second side 32 is the backlight side of the crystalline silicon solar cell 3. That is to say, during the normal operation of the four-terminal stacked photovoltaic module of the present application, there is almost no occlusion on the backlight side of the crystalline silicon solar cell 3. Therefore, no collector grid lines are provided on the backlight side of the crystalline silicon solar cell 3, or the number of collector grid lines 33 provided on the backlight side of the crystalline silicon solar cell 3 is less than the number of collector grid lines 33 provided on the light-facing side of the crystalline silicon solar cell 3, reducing the influence of the collector grid lines 33 on the backlight side of the crystalline silicon solar cell 3 on the light absorption effect of the backlight side, giving full play to the advantage that there is almost no occlusion on the backlight side of the crystalline silicon solar cell 3 during the normal operation of the four-terminal stacked photovoltaic module, significantly increasing the light absorption effect of the backlight side of the crystalline silicon solar cell, and further improving the power generation of the four-terminal stacked photovoltaic module. Moreover, the number of collector grid lines 33 on the first side 31 of the crystalline silicon solar cell 3 is greater than the number of collector grid lines 33 on the second side 32. There are more collector grid lines 33 on the first side 31, reflecting more light back to the perovskite solar cell, thereby increasing the current of the perovskite solar cell. Therefore, the power generation efficiency of the perovskite solar cell can be improved. At the same time, the preparation processes of the perovskite solar cell and the crystalline silicon solar cell in the four-terminal stacked photovoltaic module are independent of each other. The stacked photovoltaic module prepared under their respective optimal process conditions is better and relatively simple to prepare.

[0037] Figure 1 In this case, during the normal operation, the light-facing side of the four-terminal stacked photovoltaic module is its upper side, the backlight side of the four-terminal stacked photovoltaic module is its lower side. The light-facing side of the four-terminal stacked photovoltaic module refers to the side that mainly absorbs light during its normal operation, and the light-facing side and the backlight side of the four-terminal stacked photovoltaic module are opposite to each other.

[0038] It should be noted that when collector grid lines 33 are provided on both the second side 32 and the first side 31 of the crystalline silicon solar cell 3, and the number of collector grid lines 33 on the first side 31 is greater than the number of collector grid lines 33 on the second side 32, the size of the difference between the two is not specifically limited.

[0039] Other structures of the crystalline silicon solar cell here are not specifically limited. For example, the crystalline silicon solar cell can be PERC (Passivated Emitter Rear Cell), HJT (Heterojunction with Intrinsic Thin-film), TOPCon (Tunnel Oxide Passivated Contact), IBC (Interdigitated Back Contact), HBC (Back Contact Heterojunction Cell), etc. For example, in a four-terminal stacked photovoltaic module, the electrode structure on the first side of the PERC, HJT, TOPCon and other crystalline silicon solar cells close to the perovskite solar cell can be referred to Figure 2 As shown, in a four-terminal stacked photovoltaic module, the electrode structure on the second side of the PERC, HJT, TOPCon and other crystalline silicon solar cells facing away from the perovskite solar cell can be referred to Figure 3 As shown, in a four-terminal stacked photovoltaic module, both the second side and the first side of the PERC, HJT, TOPCon and other crystalline silicon solar cells are provided with collector grid lines 33, and the number of collector grid lines 33 on the first side is greater than the number of collector grid lines 33 on the second side. Again, for example, in a four-terminal stacked photovoltaic module, no collector grid lines are provided on the second side of the HBC crystalline silicon solar cell facing away from the perovskite solar cell. Refer to Figure 4 , in a four-terminal stacked photovoltaic module, only the first side of the HBC crystalline silicon solar cell close to the perovskite solar cell is provided with collector grid lines 33. That is to say, the light-facing side when the above-mentioned crystalline silicon solar cell works normally alone exists as the backlight side of the crystalline silicon solar cell or exists as the second side of the crystalline silicon solar cell during the normal operation of the four-terminal stacked photovoltaic module, and the backlight side when the above-mentioned crystalline silicon solar cell works normally alone exists as the light-facing side of the crystalline silicon solar cell or exists as the first side of the crystalline silicon solar cell during the normal operation of the four-terminal stacked photovoltaic module. Both the first side and the second side of the above-mentioned crystalline silicon solar cell can absorb light.

[0040] Optionally, the coverage area of the first-side collector grid line is larger than that of the second-side collector grid line. During the normal operation of the four-terminal stacked photovoltaic module, since the perovskite solar cell 1 is usually arranged on the light-facing side of the crystalline silicon solar cell 3, during normal operation, the first side 31 here is the light-facing side of the crystalline silicon solar cell 3, and the second side 32 is the backlight side of the crystalline silicon solar cell 3. That is to say, during the normal operation of the four-terminal stacked photovoltaic module of the present application, there is almost no occlusion on the backlight side of the crystalline silicon solar cell 3. Therefore, no collector grid line is arranged on the backlight side of the crystalline silicon solar cell 3, and the coverage area of the collector grid line on the backlight side or the second side of the crystalline silicon solar cell 3 is 0. Or, the number of collector grid lines 33 arranged on the backlight side of the crystalline silicon solar cell 3 is less than the number of collector grid lines 33 arranged on the light-facing side of the crystalline silicon solar cell 3. The coverage area of the first-side collector grid line is larger than that of the second-side collector grid line, which reduces the influence of the collector grid line 33 on the backlight side of the crystalline silicon solar cell 3 on the light absorption effect of the backlight side, gives full play to the advantage that there is almost no occlusion on the backlight side of the crystalline silicon solar cell 3 during the normal operation of the four-terminal stacked photovoltaic module, significantly increases the light absorption effect of the backlight side of the crystalline silicon solar cell, and further improves the power generation of the four-terminal stacked photovoltaic module. Moreover, the coverage area of the first-side collector grid line is larger than that of the second-side collector grid line, and the collector grid line 33 on the first side 31 covers a larger area, reflecting more light back to the perovskite solar cell, thereby increasing the current of the perovskite solar cell. Therefore, the power generation efficiency of the perovskite solar cell can be improved.

[0041] Optionally, the perovskite solar cell includes: a perovskite layer, the band gap of the perovskite layer is 1.6 eV (electron volts) to 1.8 eV, the perovskite layer has a relatively wide band gap, and the four-terminal stacked photovoltaic module has higher power generation through matching with the crystalline silicon solar cell. It should be noted that the band gap of the perovskite layer can also be greater than or equal to 1.58 eV, and the four-terminal stacked photovoltaic module also has higher power generation through matching with the crystalline silicon solar cell.

[0042] For example, the perovskite solar cell includes: a perovskite layer, and the band gap of the perovskite layer can be 1.6 eV, 1.63 eV, 1.65 eV, 1.66 eV, 1.67 eV, 1.68 eV, 1.7 eV, 1.73 eV, 1.75 eV, 1.76 eV, 1.78 eV, 1.79 eV, 1.8 eV.

[0043] It should be noted that in the present application, perovskite materials with different bandgaps can be selected for the perovskite layer of the perovskite solar cell. When a perovskite material with a wide bandgap is selected, the conversion efficiency of the perovskite solar cell can be about 16%, and the conversion efficiency of the crystalline silicon solar cell can be about 8.5%. When a perovskite material with a narrow bandgap is selected, the conversion efficiency of the perovskite solar cell can be about 19%, and the conversion efficiency of the crystalline silicon solar cell can be about 6%. The wide bandgap here can be greater than or equal to 1.6 eV, or the wide bandgap here can be greater than or equal to 1.58 eV. The narrow bandgap here is less than the wide bandgap here.

[0044] Optionally, referring to Figure 4 , only the first side 31 of the crystalline silicon solar cell 3 is provided with a collector grid line of a first polarity and a collector grid line of a second polarity. The first polarity and the second polarity are opposite. One of the first polarity and the second polarity is a positive polarity and the other is a negative polarity. The distance between adjacent collector grid lines 33 of the same polarity in the first side is greater than or equal to 0.9 mm (millimeter), that is, the distance between adjacent collector grid lines of the first polarity is greater than or equal to 0.9 mm, and the distance between adjacent collector grid lines of the second polarity is greater than or equal to 0.9 mm. Specifically, relative to a single crystalline silicon solar cell, due to the occlusion of the perovskite solar cell in the four-terminal stacked photovoltaic module, the current density of the crystalline silicon solar cell will be appropriately reduced. Therefore, the distance between adjacent collector grid lines of the same polarity in the first side of the crystalline silicon solar cell is slightly larger, specifically greater than or equal to 0.9 mm, which can not only reduce costs and avoid waste, but also

[0045] meet the requirements of current collection.

[0046] For example, only the first side of the crystalline silicon solar cell is provided with a collector grid line of a first polarity and a collector grid line of a second polarity. The first polarity and the second polarity are opposite. The distance between adjacent collector grid lines of the same polarity can be 0.9 mm, 1.0 mm, 1.07 mm, 1.1 mm, 1.2 mm, 1.33 mm, 1.4 mm, 1.5 mm, 1.6 mm, 1.7 mm, 1.8 mm, 1.9 mm, 2.0 mm.

[0047] Optionally, referring to Figure 1 , Figure 2 , Figure 3Both the second side 32 and the first side 31 of the crystalline silicon solar cell 3 are provided with current collecting grid lines 33. Among the current collecting grid lines 33 on the first side 31 and the current collecting grid lines 33 on the second side 32, generally, one is a positive-polarity current collecting grid line and the other is a negative-polarity current collecting grid line. The distance between adjacent current collecting grid lines 33 on the first side 31 of the crystalline silicon solar cell 3 is greater than or equal to 0.85 mm. Compared with a single crystalline silicon solar cell, in a four-terminal stacked photovoltaic module, due to the shielding of the perovskite solar cell 1, the current density of the crystalline silicon solar cell 3 will be appropriately reduced. Therefore, the distance between adjacent current collecting grid lines 33 in the first side 31 of the crystalline silicon solar cell 3 is slightly larger, specifically greater than or equal to 0.85 mm, which can not only reduce costs and avoid waste, but also meet the requirements of current collection.

[0048] For example, both the second side 32 and the first side 31 of the crystalline silicon solar cell 3 are provided with current collecting grid lines 33. The distance between adjacent current collecting grid lines 33 on the first side 31 can be 0.85 mm, 0.89 mm, 0.9 mm, 0.97 mm, 1.0 mm, 1.2 mm, 1.3 mm, 1.4 mm, 1.5 mm, 1.6 mm, 1.7 mm, 1.8 mm, 1.9 mm, 2.0 mm, 2.1 mm, 2.2 mm.

[0049] It should be noted that the crystalline silicon solar cell can be a crystalline silicon solar cell with a bus bar or a crystalline silicon solar cell without a bus bar. This application does not make specific limitations in this regard. In this application, the thickness of the window layer of the crystalline silicon solar cell can be appropriately increased to improve the absorption of light transmitted through the perovskite solar cell by the crystalline silicon solar cell. The specific thickness of the window layer of the crystalline silicon solar cell is not limited. The window layer here can be a transparent conductive layer or other structures of the crystalline silicon solar cell.

[0050] Optionally, referring to Figure 2 、 Figure 4 ,the crystalline silicon solar cell further includes: a bus bar 34 located on the first side 31 and electrically connected to the current collecting grid lines 33 on the first side 31. The total number of bus bars 34 on the first side 31 is 16 to 24. The bus bar 34 is used to collect the current on the current collecting grid lines 33 electrically connected to it and conduct it out. Compared with a single crystalline silicon solar cell, in a four-terminal stacked photovoltaic module, due to the shielding of the perovskite solar cell, the current density of the crystalline silicon solar cell will be appropriately reduced. Therefore, the number of bus bars 34 in the first side 31 of the crystalline silicon solar cell is within the above range, which can not only reduce costs and avoid waste, but also meet the requirements of current collection. Optionally, referring to Figure 4 ,the crystalline silicon solar cell further includes: an electrode pad 35 located on the first side 31 and electrically connected to the bus bar 34 on the first side 31. The electrode pad 35 is used to conduct out the current.

[0051] Further, the crystalline silicon solar cell further includes: a bus bar 34 located on the first side 31 and electrically connected to the collector grid line 33 on the first side 31. The total number of bus bars 34 on the first side 31 can be 16 to 18, making the balance between cost and current collection requirements better. This can not only reduce costs and avoid waste, but also meet the current collection requirements.

[0052] For example, the crystalline silicon solar cell 3 further includes: a bus bar 34 located on the first side 31 and electrically connected to the collector grid line 33 on the first side 31. The total number of bus bars 34 on the first side 31 can be 16, 17, 18, 19, 20, 21, 22, 23, or 24.

[0053] Optionally, the crystalline silicon solar cell includes: a silicon substrate for absorbing light with wavelengths from 400 nm (nanometers) to 1100 nm. Specifically, in a four-terminal stacked photovoltaic module, due to the occlusion of the perovskite solar cell, the perovskite solar cell mainly absorbs short-wavelength light, and the wavelength of the light transmitted through the perovskite solar cell is longer. Therefore, in this application, the silicon substrate of the crystalline silicon solar cell absorbs light with wavelengths from 400 nm to 1100 nm, that is, the silicon substrate of the crystalline silicon solar cell mainly absorbs long-wavelength light, which can further increase the power generation.

[0054] For example, the crystalline silicon solar cell includes: a silicon substrate for absorbing light with wavelengths of 400 nm, 430 nm, 500 nm, 520 nm, 600 nm, 700 nm, 750 nm, 800 nm, 900 nm, 1000 nm, and 1100 nm.

[0055] Optionally, referring to Figure 1 , the four-terminal stacked photovoltaic module further includes: a first encapsulation layer 2 disposed on the first side 31 of the crystalline silicon solar cell 3. The thickness of the first encapsulation layer 2 is greater than or equal to 0.3 mm, and the direction in which the thickness of the first encapsulation layer 2 is located is parallel to the stacking direction of the perovskite solar cell 1 and the crystalline silicon solar cell 3. For example, Figure 1 in, the direction in which the thickness of the first encapsulation layer 2 is located is the up-down direction. Specifically, when the crystalline silicon solar cell 3 has a bus bar, there will be a tinned copper strip in the bus bar part, and the height difference between the tinned copper strip and the silicon substrate may cause the first encapsulation layer 2 in the tinned copper strip part to become thinner, thereby having the risk of contacting the perovskite solar cell 1. In this application, the thickness of the first encapsulation layer 2 is relatively thick, and a thicker first encapsulation layer 2 is used between the perovskite solar cell 1 and the crystalline silicon solar cell 3, which can prevent short circuits caused by the contact between the perovskite solar cell 1 and the crystalline silicon solar cell 3.

[0056] For example, the thickness of the first encapsulation layer 2 can be 0.3 mm, 0.36 mm, 0.4 mm, 0.45 mm, 0.5 mm, 0.53 mm, 0.6 mm, 0.62 mm, 0.7 mm, 0.8 mm, 0.9 mm, 1.0 mm.

[0057] Referring to Figure 1 , the four-terminal stacked photovoltaic module includes a perovskite solar cell 1 and a crystalline silicon solar cell 3 which are stacked. The crystalline silicon solar cell 3 includes: a first side 31 close to the perovskite solar cell 1 and a second side 32 opposite to the first side 31. The crystalline silicon solar cell is provided with a current collecting grid line only on the first side. Or, referring to Figure 1 , the second side 32 and the first side 31 of the crystalline silicon solar cell 3 are both provided with current collecting grid lines 33, and the number of the current collecting grid lines 33 on the first side 31 is greater than the number of the current collecting grid lines 33 on the second side 32. Optionally, referring to Figure 1 , the stacked photovoltaic module further includes: a backplane glass 5, and the crystalline silicon solar cell 3 is located between the perovskite solar cell 1 and the backplane glass 5. The stacked photovoltaic module further includes: a junction box (not shown in the figure) on the side of the backplane glass 5 away from the crystalline silicon solar cell 3. The orthographic projection of the junction box on the backplane glass 5 and the orthographic projection of the crystalline silicon solar cell 3 on the backplane glass 5 do not overlap, that is, the orthographic projection of the junction box on the backplane glass 5 and the orthographic projection of the crystalline silicon solar cell 3 on the backplane glass 5 are tangent or separated. That is to say, the junction box does not block the effective power generation area of the crystalline silicon solar cell 3, and the power generation amount can be further improved. The junction box here can be the junction box of the perovskite solar cell and the junction box of the crystalline silicon solar cell 3. The terminals of the perovskite solar cell are connected to the junction box of the perovskite solar cell, and the terminals of the crystalline silicon solar cell are connected to the junction box of the crystalline silicon solar cell.

[0058] Optionally, the backplane glass 5 includes: an edge portion and an interior located within the edge portion. The interior can include the geometric center of the backplane glass 5, etc. The orthographic projection of the junction box on the backplane glass 5 is located in the edge portion and / or the interior, and the setting position of the junction box is flexible and diverse.

[0059] Optionally, the perovskite solar cell 1 and the crystalline silicon solar cell 3 are connected in parallel, and the performance of the four-terminal stacked photovoltaic module is better and the power generation amount is higher.

[0060] It should be noted that, referring to Figure 1 , the stacked photovoltaic module may further include: a second encapsulation layer 4 located between the crystalline silicon solar cell 3 and the backplane glass 5. The materials of the first encapsulation layer 2 and the second encapsulation layer 4 can be glue films, etc., and the materials of the first encapsulation layer 2 and the second encapsulation layer 4 are not specifically limited.

[0061] It should be noted that in this application, there is no specific limitation on whether the perovskite solar cell is a formal perovskite solar cell or a reverse perovskite solar cell.

[0062] The preparation process of a four-terminal stacked photovoltaic module according to this application may include the following steps.

[0063] The first step: Prepare a perovskite solar cell.

[0064] The first sub-step: On the TCO glass, use a laser with a wavelength of 1064 nm to draw equally spaced P1 lines, and the spacing of each P1 line is equal, and the spacing ≤ 7 mm. Among them, the TCO layer serves as the front electrode layer, and the TCO material includes any one or several of materials such as FTO, ITO, AZO, GZO, IZO, and IWO.

[0065] The second sub-step: Prepare a hole transport layer on the front electrode layer. Here, the hole transport material can be an inorganic material, including CuSCN, NiO x , NiMgO x , V2O5 and MoO3, where X in the foregoing chemical formula is a number greater than 0. Here, the hole transport material can also be an organic material, including any one or several of PTAA, SAMs, Spiro-TTB, Spiro-OMeTAD, and Spiro-TAD, or a composite hole transport layer of inorganic material + organic material.

[0066] The third sub-step: Prepare a perovskite layer on the hole transport layer. The material of the perovskite layer is formed by one or more materials with a crystal structure of the chemical general formula ABX m Y 3-m type, where A is CH3NH3, C4H9NH3, NH2=CHNH2 or Cs; B is Pb or Sn; X is Cl, Br or I, Y is Cl, Br or I, and X and Y are not simultaneously the same element; m = 1, 2 or 3. The preparation method is one or more of spin coating, ultrasonic spraying, slot coating and other methods. When necessary, a buffer layer can be added between the perovskite layer and the hole transport layer to improve the conversion efficiency or stability of the battery.

[0067] The fourth sub-step: Prepare an electron transport layer on the perovskite layer. The electron transport materials include any one or several of TiO2, SnO2, ZnO, PCBM, C 60 or BCP. Preferably, the electron transport layer is C 60 and SnO2. The preparation method of C 60 is vacuum evaporation, and the preparation thickness is 5 - 50 nm; the preparation method of SnO2 is atomic layer deposition, and the preparation thickness is 5 - 50 nm. When necessary, a buffer layer can be added between the perovskite layer and the electron transport layer to improve the conversion efficiency or stability of the battery.

[0068] Fifth sub-step: Use green laser with a wavelength of 532 nm to scribe at a position to the left of the P1 scribe line to form the P2 scribe line. The distance between the P1 scribe line and the P2 scribe line is ≤ 500 μm (micrometer). The green laser with a wavelength of 532 nm is difficult to be absorbed by the front electrode layer and is easily absorbed by the perovskite layer. When the perovskite layer is scribed by the laser, the hole transport layer and the electron transport layer are removed together. The P2 scribe line penetrates through the electron transport layer, the perovskite layer and the hole transport layer, but does not damage the front electrode layer.

[0069] Sixth sub-step: Prepare a back electrode layer on the electron transport layer. The back electrode layer fills into the P2 and contacts the TCO layer. The back electrode layer is a TCO electrode prepared by magnetron sputtering or a TCO electrode prepared by reactive plasma coating method. The TCO electrode is any one or several of materials such as FTO, ITO, AZO, GZO, IZO, IWO, etc., and the film thickness is 150 - 500 nm.

[0070] Seventh sub-step: Use mechanical scribing or green laser with a wavelength of 532 nm to scribe at a position to the left of the P2 scribe line to form the P3 scribe line. The distance between the P2 scribe line and the P3 scribe line is ≤ 500 μm. Mechanical scribing can control the scribing depth. The green laser with a wavelength of 532 nm is difficult to be absorbed by the front electrode layer and is easily absorbed by the perovskite layer. When the perovskite layer is scribed by the laser, the hole transport layer, the electron transport layer and the back electrode layer are removed together. Both mechanical scribing or green laser with a wavelength of 532 nm can scribe through the back electrode layer, the electron transport layer, the perovskite layer and the hole transport layer, but do not damage the front electrode layer. At this time, the individual sub-cells of the top cell form a series structure.

[0071] Eighth sub-step: Use soldering tin to weld the tinned copper strip on the two outermost sub-cells as leads to lead out the current. At this time, the preparation of the perovskite solar cell is completed.

[0072] Second step: Package the perovskite / crystalline silicon four-terminal tandem photovoltaic module.

[0073] First sub-step: Lamination. As Figure 1 shown, lay the perovskite solar cell 1 completed in the first step above, the first encapsulation layer 2 (one of encapsulation materials such as POE, EVA, EPE, etc.), the crystalline silicon solar cell 3 (including PERC, HJT, TOPCon, HBC, etc.) in sequence. The first side 31 of the crystalline silicon solar cell contacts the first encapsulation layer 2. Weld the leads of the perovskite solar cell 1 and the busbars of the crystalline silicon solar cell 3 respectively, and lead out the connection terminals. Then lay the second encapsulation layer 4 (one of encapsulation materials such as POE, EVA, EPE, etc.) and the backplane glass 5. The connection terminals are led out from the mounting holes reserved on the backplane glass 5.

[0074] Second sub-step: Encapsulation. Use a laminator to laminate the stack completed in the first sub-step of the second step, connect the terminals of the perovskite solar cell to the junction box of the perovskite solar cell, and connect the terminals of the crystalline silicon solar cell to the junction box of the crystalline silicon solar cell. The junction box is located at the edge or center of the backplane glass and does not block the crystalline silicon solar cell.

[0075] Third step: Electrical performance test. Connect the junction boxes of the perovskite solar cell and the crystalline silicon solar cell respectively, and test the electrical performance of the perovskite solar cell and the crystalline silicon solar cell under standard test conditions.

[0076] This application also provides a photovoltaic system, including: a plurality of any one of the aforementioned four-terminal stacked photovoltaic modules. In this photovoltaic system, the crystalline silicon solar cell is closer to the center of the earth than the perovskite solar cell. Refer to Figure 5 , the installation angle ∠2 of the photovoltaic system is greater than the optimal installation angle ∠1 of the location where the photovoltaic system is located. The optimal installation angle ∠1 of the location where the photovoltaic system is located is mainly related to factors such as the latitude of the location where the photovoltaic system is located, the altitude of the location where the photovoltaic system is located, and the irradiance of the location where the photovoltaic system is located. Specifically, the perovskite solar cell is not sensitive to the installation angle. When the installation angle of the photovoltaic system is greater than the optimal installation angle of the location where the photovoltaic system is located, the power generation loss of the perovskite solar cell is relatively small. The first side of the crystalline silicon solar cell close to the sun has been blocked by the perovskite solar cell. When the installation angle of the photovoltaic system is greater than the optimal installation angle of the location where the photovoltaic system is located, the power generation of the crystalline silicon solar cell also has a relatively small loss. However, when the installation angle of the photovoltaic system is greater than the optimal installation angle of the location where the photovoltaic system is located, the amount of incident light of the reflected light on the second side of the crystalline silicon solar cell increases, increasing the power generation, and in the above cases, the power generation loss is relatively small and the increase in power generation is relatively large, so the overall power generation increases, so the power generation of this photovoltaic system is greater. At the same time, when the installation angle of the photovoltaic system is greater than the optimal installation angle of the location where the photovoltaic system is located, the installation space can also be saved. Figure 5 In [reference], 6 is the schematic diagram of light, and 7 is the schematic diagram of the installation surface of the photovoltaic system. It should be noted that the installation angle ∠2 of the photovoltaic system also needs to be less than or equal to 90°.

[0077] Optionally, the installation angle ∠2 of the photovoltaic system is greater than the optimal installation angle ∠1 of the location where the photovoltaic system is located, and moreover, the difference between the installation angle ∠2 of the photovoltaic system and the optimal installation angle ∠1 of the location where the photovoltaic system is located is greater than or equal to 5°. In this case, the amount of incident light of the reflected light on the second side of the crystalline silicon solar cell increases more, increasing the power generation to a greater extent. At the same time, the power generation loss of the perovskite solar cell is smaller, and the overall power generation of the photovoltaic system increases more.

[0078] For example, the installation angle ∠2 of the photovoltaic system is greater than the optimal installation angle ∠1 of the location where the photovoltaic system is located. Moreover, the difference between the installation angle ∠2 of the photovoltaic system and the optimal installation angle ∠1 of the location where the photovoltaic system is located can be 5°, 5.2°, 5.7°, 5.9°, 6°, 6.7°, 7°, 7.5°, 8°, 8.5°, 8.9°, 9°, 10°.

[0079] The present application will be further described below in conjunction with specific examples and comparative examples.

[0080] Comparative Example 1

[0081] 1-1. Prepare a perovskite solar cell.

[0082] 1-1-1. On a FTO glass with a size of 400mm×600mm×3.2mm, use a laser with a wavelength of 1064nm to scribe equally spaced P1 lines. Each P1 scribing has an equal spacing of 5mm, obtaining the front electrode layer.

[0083] 1-1-2. Prepare a hole transport layer on the front electrode layer. Use magnetron sputtering on FTO to prepare 20nm of NiO x , and then prepare a layer of SAMs material on the NiO x .

[0084] 1-1-3. Prepare a perovskite layer on the hole transport layer. Select a perovskite material with a bandgap of 1.68eV, and the specific composition is Cs 0.05 (FA 0.77 MA 0.23 ) 0.95 Pb(I 0.77 Br 0.23 )3. Use the slot coating method to coat the perovskite precursor on the hole transport layer, and perform a vacuum treatment to remove the solvent. Then perform an annealing treatment, and the annealing conditions are 120°C×15min.

[0085] 1-1-4. Prepare an electron transport layer on the perovskite layer. Use line source evaporation of C 60 material on the perovskite layer; then use ALD to prepare 25nm of SnO2 material on the C 60 material.

[0086] 1-1-5. Use a green laser with a wavelength of 532nm to scribe at a position to the left of the P1 scribing, forming a P2 scribing. The spacing between the P1 scribing and the P2 scribing is 100μm.

[0087] 1-1-6. Use magnetron sputtering to prepare 300nm of ITO material as the back electrode layer on the electron transport layer. The back electrode layer fills into the P2 and contacts the TCO layer.

[0088] 1-1-7. Use a green laser with a wavelength of 532 nm to perform scribing at a position to the left of the P2 scribe line, forming the P3 scribe line. The distance between the P2 scribe line and the P3 scribe line is 100 μm. At this time, each sub-cell of the top cell forms a series structure.

[0089] 1-1-8. Use solder to weld the tinned copper strip to the two outermost sub-cells as leads to draw out the current. At this time, the preparation of the perovskite solar cell is completed.

[0090] 1-2. Package the perovskite / crystalline silicon four-terminal tandem photovoltaic module.

[0091] 1-2-1. Lamination. As Figure 6 shown, sequentially lay the perovskite solar cell completed in 1-1, the first encapsulation layer 2 with a size of 400 mm × 600 mm (EVA is selected in this comparative example), and the crystalline silicon solar cell 3 (HJT cell is selected in this comparative example, with a size of 182 mm × 91 mm. After 6 pieces are connected in series, then take two strings of cell strings and connect them in series). Among them, the first side 31 of the crystalline silicon solar cell 3 is in contact with the first encapsulation layer 2, the second side 31 of the crystalline silicon solar cell 3 faces away from the first encapsulation layer 2, and the number of collector grid lines 33 on the first side 31 of the crystalline silicon solar cell 3 is less than that on the second side. Weld the leads of the perovskite solar cell and the bus bar of the crystalline silicon solar cell 3 respectively, and lead out the connection terminals. Then lay the second encapsulation layer 4 (EVA is selected in this comparative example), the second side 32 of the crystalline silicon solar cell 3 is in contact with the second encapsulation layer 4, and finally lay the backplane glass 5. The connection terminals are led out from the mounting holes reserved on the backplane glass 5.

[0092] 1-2-2. Encapsulation. Use a laminator to laminate the stack completed in step 1-2-1, connect the terminals of the perovskite solar cell to the junction box of the perovskite solar cell, and connect the terminals of the crystalline silicon solar cell 3 to the junction box of the crystalline silicon solar cell. The junction boxes of the top cell and the bottom cell are both outside the effective power generation area and will not affect the incident light on the top cell and the bottom cell.

[0093] 1-3. Electrical performance test and power generation test.

[0094] 1-3-1. Connect the junction boxes of the perovskite solar cell and the crystalline silicon solar cell respectively, and test the electrical performance of the perovskite solar cell and the crystalline silicon solar cell 3 under standard test conditions. The effective area of the four-terminal tandem photovoltaic module in Comparative Example 1 is 0.2055 m 2 , calculate its conversion efficiency, and the specific test results are shown in the following table. The effective area of the four-terminal tandem photovoltaic module refers to the larger of the total area of the perovskite solar cell and the total area of the crystalline silicon solar cell.

[0095] The junction box of the 1-3-2 connected crystalline silicon solar cell provides an irradiance of 200 W / m 2 to simulate the back reflected light and test the additional gain of the crystalline silicon solar cell 3. The effective area of the component is 0.2055 m 2 , and its conversion efficiency is calculated. The specific test results are shown in the following table.

[0096] 1-3-3. Install the perovskite / crystalline silicon four-terminal tandem photovoltaic module on the roof, with the installation angle ∠2 being the same as the optimal installation angle ∠1 of the location where the photovoltaic system is located (example: 38°), monitoring time: 1 month, and monitor its cumulative power generation. The monitoring results are shown in the following table.

[0097] Comparative Example 2

[0098] 2-1. Prepare a perovskite solar cell according to the method of Comparative Example 1. Among them, in 2-1-3, when preparing the perovskite layer on the hole transport layer, a perovskite material with a band gap of 1.55 eV is selected, and the specific composition is Cs 0.17 FA 0.83 Pb(I 0.9 Br 0.1 )3. Other steps are the same as those in Comparative Example 1.

[0099] 2-2. Encapsulate the perovskite / crystalline silicon four-terminal tandem photovoltaic module according to the method of Comparative Example 1. The preparation method is the same as that in 1-2.

[0100] 2-3. Conduct electrical performance tests and power generation tests according to the method of Comparative Example 1. The test method is the same as that in 1-3. The specific test results are shown in the following table.

[0101] Example 1

[0102] 3-1. Prepare a perovskite solar cell according to the method of Comparative Example 1. The preparation method is the same as that in 1-1.

[0103] 3-2. Encapsulate the perovskite / crystalline silicon four-terminal tandem photovoltaic module.

[0104] 3-2-1. Lamination. As Figure 1 shown, lay the perovskite solar cell 1, the first encapsulation layer 2 with a size of 400 mm × 600 mm (EVA is selected in this example, the same as Comparative Example 1), and the crystalline silicon solar cell 3 (HJT is selected in this example, with the same size, performance, and connection method as Comparative Example 1) in sequence. Among them, the first side 31 of the crystalline silicon solar cell 3 is in contact with the first encapsulation layer 2, and the second side 32 of the crystalline silicon solar cell 3 faces away from the first encapsulation layer 2. Refer to Figure 1 , Figure 2 , Figure 3, the number of current collecting grid lines 33 on the first side 31 is greater than the number of current collecting grid lines 33 on the second side 32. Weld the leads of the perovskite solar cell and the bus bars of the crystalline silicon solar cell 3 respectively, and lead out the terminal blocks. Then lay the second encapsulation layer 4 (EVA is selected in this comparative example), the second side 32 of the crystalline silicon solar cell 3 contacts the second encapsulation layer 4, and finally lay the backplane glass 5. The terminal blocks are led out from the installation holes reserved in the glass.

[0105] 3-2-2. Encapsulation. The same as step 1-2-1.

[0106] 3-3. Electrical performance test and power generation test.

[0107] 3-3-1. The test method is the same as 1-3-1. The specific test results are shown in the following table.

[0108] 3-3-2. The same as 1-3-2. The specific test results are shown in the following table.

[0109] 3-3-3. Install the perovskite / crystalline silicon four-terminal stacked module on the roof, referring to Figure 5 , the installation angle ∠2 is greater than the optimal installation angle ∠1 of the photovoltaic system location (example: the optimal installation angle ∠1 of the photovoltaic system location is 38°, and the actual installation angle ∠2 is 45°), monitoring time: 1 month, monitor its cumulative power generation. The monitoring results are shown in the following table.

[0110] Example 2

[0111] 4-1. Prepare the perovskite solar cell according to the method of Comparative Example 2. The preparation method is the same as 2-1.

[0112] 4-2. Encapsulate the perovskite / crystalline silicon four-terminal stacked photovoltaic module. The specific operation is the same as 3-2, that is, the first side 31 of the crystalline silicon solar cell 3 contacts the first encapsulation layer 2, the second side 32 of the crystalline silicon solar cell 3 faces away from the first encapsulation layer 2, referring to Figure 1 、 Figure 2 、 Figure 3 , the number of current collecting grid lines 33 on the first side 31 is greater than the number of current collecting grid lines 33 on the second side 32.

[0113] 4-3. Electrical performance test and power generation test. The test method is the same as 3-3, and the specific test results are shown in the following table.

[0114] Test result table

[0115]

[0116] In the above table, Isc is the short-circuit current, Voc is the open-circuit voltage, FF is the fill factor, Pmax is the maximum output power, and Eff is the conversion efficiency. Comparing Example 1, Example 2, Comparative Example 1, and Comparative Example 2 above, it can be concluded that when considering the power generation gain of the second side of the crystalline silicon solar cell being light-transmissive, in terms of both the simulated conversion efficiency and the measured power generation, both Example 1 and Example 2 have gains compared to the four-terminal stacked photovoltaic modules of Comparative Example 1 and Comparative Example 2. The possible reason is that the perovskite solar cell 1 is not sensitive to the installation angle. When the installation angle of the photovoltaic system is greater than the optimal installation angle of the location where the photovoltaic system is located, the power generation loss of the perovskite solar cell 1 is relatively small. The first side 31 of the crystalline silicon solar cell 3 close to the sun has been blocked by the perovskite solar cell 1. When the installation angle of the photovoltaic system is greater than the optimal installation angle of the location where the photovoltaic system is located, the power generation of the crystalline silicon solar cell 3 also has a relatively small loss. However, when the installation angle of the photovoltaic system is greater than the optimal installation angle of the location where the photovoltaic system is located, the second side 32 of the crystalline silicon solar cell 3 has no or fewer busbars. The increased amount of incident light of the reflected light on the second side 32 of the crystalline silicon solar cell 3 increases the power generation, and in the above cases, the power generation loss is relatively small and the increase in power generation is relatively large, so the overall power generation increases, and thus the power generation of this photovoltaic system is greater. Moreover, this application not only has a very low impact on the process of the stacked photovoltaic module, but also its actual installation angle can be greater than the optimal installation angle, which helps to reduce the floor area during installation. More specifically, the current of the perovskite solar cell in Example 1 and Example 2 is higher than that in Comparative Example 1 and Comparative Example 2. After analysis, it is because: the number of busbars 33 on the first side 31 of the crystalline silicon solar cell 3 is greater than the number of busbars 33 on the second side 32. There are more busbars 33 on the first side 31, reflecting more light back to the perovskite solar cell, thereby increasing the current of the perovskite solar cell. Therefore, this application can improve the power generation efficiency of the perovskite solar cell.

[0117] It should be noted that in this article, the term "including", "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "including a..." does not exclude the existence of another identical element in the process, method, article or device including that element.

[0118] The embodiments of the present utility model have been described above in conjunction with the accompanying drawings. However, the present utility model is not limited to the above specific embodiments. The above specific embodiments are merely illustrative rather than restrictive. Under the inspiration of the present utility model, those of ordinary skill in the art can also make many forms without departing from the purpose of the present utility model and the scope protected by the claims. All of these fall within the protection scope of the present utility model.

Claims

1. A four-terminal stacked photovoltaic module, characterized in that, Comprising: A perovskite solar cell and a crystalline silicon solar cell arranged in a stacked manner; The crystalline silicon solar cell includes: a first side close to the perovskite solar cell and a second side opposite to the first side; only the first side of the crystalline silicon solar cell is provided with a collector grid line; or, both the second side and the first side of the crystalline silicon solar cell are provided with collector grid lines, and the number of collector grid lines on the first side is greater than the number of collector grid lines on the second side.

2. The four-terminal laminated photovoltaic module according to claim 1, wherein: The coverage area of the collector grid line on the first side is greater than the coverage area of the collector grid line on the second side.

3. The four-terminal stacked photovoltaic module according to claim 1, wherein, The perovskite solar cell includes: a perovskite layer, and the bandgap of the perovskite layer is 1.6 eV to 1.8 eV.

4. The four-terminal laminated photovoltaic module according to claim 1 or 2, characterized in that, Only the first side of the crystalline silicon solar cell is provided with collector grid lines of a first polarity and collector grid lines of a second polarity, the first polarity and the second polarity are opposite, and the distance between adjacent collector grid lines of the same polarity is greater than or equal to 0.9 mm; or, Both the second side and the first side of the crystalline silicon solar cell are provided with collector grid lines, and the distance between adjacent collector grid lines on the first side is greater than or equal to 0.85 mm.

5. The four-terminal laminated photovoltaic module according to claim 4, wherein The crystalline silicon solar cell further includes: a bus bar located on the first side and electrically connected to the collector grid lines on the first side, and the total number of the bus bars on the first side is 16 to 24.

6. The four-terminal laminated photovoltaic module according to claim 1, wherein A first encapsulation layer is provided on the first side of the crystalline silicon solar cell, and the thickness of the first encapsulation layer is greater than or equal to 0.3 mm.

7. The four-terminal stacked photovoltaic module according to claim 1, wherein, Further comprising: A backplane glass and a junction box; The crystalline silicon solar cell is located between the perovskite solar cell and the backplane glass; The junction box is located on the side of the backplane glass away from the crystalline silicon solar cell; The orthographic projection of the junction box on the backplane glass and the orthographic projection of the crystalline silicon solar cell on the backplane glass do not overlap.

8. The four-terminal stacked photovoltaic module according to claim 1, wherein, The perovskite solar cell is connected in parallel with the crystalline silicon solar cell.

9. A photovoltaic system, characterized in that, Comprising: A plurality of four-terminal stacked photovoltaic modules according to any one of claims 1 to 8; in the photovoltaic system, the crystalline silicon solar cell is closer to the earth's center than the perovskite solar cell; The installation angle of the photovoltaic system is greater than the optimal installation angle of the location where the photovoltaic system is located and less than or equal to 90°.

10. The photovoltaic system according to claim 9, characterized in that, The difference between the installation angle of the photovoltaic system and the optimal installation angle is greater than or equal to 5°.

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