Image sensor, lens assembly and electronic equipment

Abstract

The embodiment of the utility model provides an image sensor, a lens assembly and electronic equipment. The image sensor comprises a pixel region; the pixel area is provided with a plurality of first pixels and second pixels, the second pixels are distributed among the first pixels, the first pixels output first photoelectric signals, the first photoelectric signals are used for generating a two-dimensional image, the second pixels output second photoelectric signals, and the second photoelectric signals are used for generating a two-dimensional image. And the second photoelectric signal is used for generating a two-dimensional image and depth information. The image sensor provided by the embodiment of the utility model can obtain a high-resolution two-dimensional image while realizing a distance measurement function through a three-dimensional image, and realizes the functions of biological recognition and the like. Moreover, the influence of additionally arranging the first pixels on the image sensor on the overall size is small, the processing and cost control of the image sensor are facilitated, and further, the layout of the image sensor in the electronic equipment is facilitated.

Description

Technical Field

[0001] This application belongs to the technical field of electronic devices, and particularly relates to an image sensor, a lens assembly, and an electronic device. Background Art

[0002] Time of Flight (TOF) camera is a technology for measuring the distance of an object. It achieves this by measuring the time required for a light pulse to be sent from a light source to a target object and then return. Generally, photosensitive pixels are provided on the image sensor in a TOF camera. The photosensitive pixels can be used to receive the light pulses emitted by the light source and the light pulses reflected from the target object, and output a three-dimensional image with depth information to achieve the function of distance measurement.

[0003] In the prior art, due to the exposure time period of the TOF image sensor and the narrow width of the light pulse, the area of the photosensitive pixel needs to be particularly large in order to receive sufficient light signals. When the area of the photosensitive pixel is large, the number of photosensitive pixel units that can be set per unit area is relatively small. Therefore, the resolution is relatively low. However, for some specific application scenarios that require high-resolution images, such as application scenarios that require biometric identification, in order to improve the resolution, it is usually necessary to increase the number of photosensitive pixels. Since the area of the photosensitive pixels in the TOF image sensor is large, the increase in the number of photosensitive pixels will cause an increase in the overall volume of the TOF image sensor, which is not only unfavorable for the processing and cost control of the TOF image sensor, but also affects the layout of the TOF image sensor in the electronic device. Summary of the Utility Model

[0004] This application aims to provide an image sensor, a lens assembly, and an electronic device to solve the problem that the existing TOF image sensor has a large volume and is not conducive to layout.

[0005] To solve the above technical problems, this application is implemented as follows:

[0006] In a first aspect, this application discloses an image sensor, the image sensor includes a pixel area; a plurality of first pixels and second pixels are provided in the pixel area, and the plurality of second pixels are distributed among the plurality of first pixels. Among them, the first pixels output first optoelectronic signals, and the first optoelectronic signals are used to generate a two-dimensional image, and the second pixels output second optoelectronic signals, and the second optoelectronic signals are used to generate a two-dimensional image and depth information.

[0007] Optionally, the image sensor satisfies any one or more of the following conditions:

[0008] The area of the first pixel is less than or equal to the area of the second pixel;

[0009] The number of the first pixels is greater than the number of the second pixels;

[0010] The total area of multiple first pixels is greater than the total area of multiple second pixels.

[0011] Optionally, the second pixels are evenly spaced in the pixel region along a first direction and a second direction respectively, and the first direction is perpendicular to the second direction.

[0012] Optionally, the pixel region includes multiple pixel groups, and each pixel group includes n second pixels and m first pixels, where n >= 1 and m > n.

[0013] Optionally, the arrangement of the first pixels and the second pixels in the pixel group is the same or different.

[0014] Optionally, the area of the second pixel is greater than the area of the first pixel;

[0015] Alternatively, each pixel group includes multiple adjacent second pixels, and the area of the second pixel is equal to the area of the first pixel.

[0016] Optionally, the first pixel is provided with a first pixel circuit for converting an optical signal projected onto the first pixel into the first optoelectronic signal, and the second pixel is provided with a second pixel circuit for converting an optical signal projected onto the second pixel into the second optoelectronic signal;

[0017] The image sensor further includes a row addressing circuit and a readout circuit, the row addressing circuit and the readout circuit are electrically connected to the first pixel circuit and the second pixel circuit respectively, and the row addressing circuit is configured to control the first pixel circuit and the second pixel circuit to output the first optoelectronic signal and the second optoelectronic signal to the readout circuit respectively.

[0018] Optionally, the first pixels and the second pixels are arranged in an array along a first direction and a second direction respectively, and the second direction is perpendicular to the first direction;

[0019] The row addressing circuit is disposed at an edge of the pixel region along the first direction, and the row addressing circuit includes multiple row addressing lines extending along the first direction, and each row addressing line is electrically connected to the first pixel circuit of the first pixels and / or the second pixel circuit of the second pixels in its corresponding row;

[0020] The readout circuit is disposed at an edge of the pixel region along the second direction. The readout circuit includes a plurality of readout signal lines extending along the second direction, and the readout signal lines are respectively connected to the first pixel circuits of the first pixels and / or the second pixel circuits of the second pixels in the corresponding columns.

[0021] Optionally, one of the second pixel circuits shares at least two of the row addressing lines with at least two of the first pixel circuits.

[0022] Optionally, the second pixel circuit includes two pixel circuit modules. The two pixel circuit modules are respectively connected to one or two of the row addressing lines. The two pixel circuit modules are configured to respectively generate the second optoelectronic signals obtained by two exposures at different time points, and the row addressing lines control the switches of the two pixel circuit modules to output the second optoelectronic signals through the readout signal lines.

[0023] Optionally, the pixel circuit module includes a transfer transistor;

[0024] The second pixel circuit further includes a first diode, and the first diode is respectively connected to the transfer transistors of the two pixel circuit modules.

[0025] Optionally, the pixel circuit module includes a transfer transistor;

[0026] The second pixel circuit further includes a second diode, a third diode, a first switch, a second switch, and a third switch. The output end of the second diode is sequentially connected to the transfer transistor of one of the pixel circuit modules through the first switch and the second switch. The output end of the third diode is connected between the first switch and the second switch and is simultaneously connected to the transfer transistor of the other pixel circuit module;

[0027] The third switch is connected between the output end of the second diode and the input end of the transfer transistor of one of the pixel circuit modules. When the third switch is turned on and the first switch and the second switch are turned off, the first pixel circuit multiplexes one of the two pixel circuit modules.

[0028] In a second aspect, an embodiment of the present application further discloses a lens assembly, which includes: a bracket, a lens, a circuit board, and the image sensor according to any one of the above; wherein,

[0029] A through hole is provided in the bracket, and the lens is disposed in the through hole;

[0030] The circuit board is connected to the bracket;

[0031] The image sensor is connected to the bracket and is opposite to the lens.

[0032] In a third aspect, the present application also discloses an electronic device, which includes the image sensor described in any one of the above;

[0033] Alternatively, the electronic device includes the above lens assembly.

[0034] In the embodiments of the present application, by providing a plurality of first pixels and second pixels in the pixel area of the image sensor, the first pixels can be used to output first optoelectronic signals, and the first optoelectronic signals can be used to generate two-dimensional images. The second pixels can be used to output second optoelectronic signals, and the second optoelectronic signals can be used to generate two-dimensional images and depth information, and the depth information can be used for three-dimensional imaging. Since the first pixels only need to be used to output the first optoelectronic signals that can form two-dimensional images, the area of the first pixels is small, and the number of the first pixels that can be arranged per unit area is large, which is beneficial to obtaining high-resolution two-dimensional images and realizing functions such as biometric recognition. Moreover, since the area of the first pixels is small, increasing the number of the first pixels on the image sensor has a small impact on the overall volume, which is beneficial to the processing and cost control of the image sensor. Further, due to the mixed arrangement of the first pixels and the second pixels, it not only improves the problem of insufficient resolution caused by the large pixel size of the image sensor, but also solves the problem that ordinary image sensors cannot obtain depth information.

[0035] Additional aspects and advantages of the present utility model will be given in part in the following description, become apparent in part from the following description, or be learned through the practice of the present utility model. Description of the Drawings

[0036] The above and / or additional aspects and advantages of the present utility model will become apparent and be readily understood from the description of the embodiments in conjunction with the following drawings, wherein:

[0037] Figure 1 is a schematic structural diagram of an image sensor according to an embodiment of the present application;

[0038] Figure 2 is a pixel circuit diagram of the first pixel and the second pixel according to an embodiment of the present application;

[0039] Figure 3 is Figure 1 one of the circuit distribution diagrams of the image sensor shown;

[0040] Figure 4 is Figure 1 the other circuit distribution diagram of the image sensor shown;

[0041] Figure 5One of the distribution diagrams of a row addressing circuit described in an embodiment of the present application;

[0042] Figure 6 Another distribution diagram of a row addressing circuit described in an embodiment of the present application;

[0043] Figure 7 Schematic structural diagram of a first pixel circuit described in an embodiment of the present application;

[0044] Figure 8 Schematic structural diagram of a second pixel circuit described in an embodiment of the present application;

[0045] Figure 9 Operating timing diagram of an image sensor described in an embodiment of the present application;

[0046] Figure 10 Schematic structural diagram of another image sensor described in an embodiment of the present application;

[0047] Figure 11 Schematic structural diagram of another second pixel circuit described in an embodiment of the present application;

[0048] Figure 12 Step flowchart of an imaging method described in an embodiment of the present application.

[0049] Reference numerals: 10 - pixel region, 11 - first pixel, 110 - first pixel circuit, 111 - first photosensitive region, 112 - first floating diffusion region, 113 - first transfer transistor, 114 - first reset transistor, 115 - first source follower transistor, 116 - first row selection transistor, 12 - second pixel, 1200 - second photosensitive region, 120 - second pixel circuit, 121 - second transfer transistor, 122 - second reset transistor, 123 - second source follower transistor, 124 - second row selection transistor, 125 - third transfer transistor, 126 - third reset transistor, 127 - third source follower transistor, 128 - third row selection transistor, 129 - first diode, 1210 - first capacitor, 1211 - second capacitor, 1212 - first switch, 1213 - second switch, 1214 - third switch, 1215 - second diode, 1216 - third diode, 13 - row addressing circuit, 131 - row addressing line, 14 - column addressing circuit, 15 - readout circuit, 151 - readout signal line, 16 - row pixel switch, X - first direction, Y - second direction. Detailed implementation manners

[0050] Embodiments of the present utility model will be described in detail below. Examples of the embodiments are shown in the accompanying drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the accompanying drawings are exemplary and are only used to explain the present utility model and should not be construed as a limitation of the present utility model. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in this application without creative efforts belong to the scope of protection of this application.

[0051] The terms "first", "second" in the description and claims of this application may explicitly or implicitly include one or more of such features. In the description of the present utility model, unless otherwise specified, the meaning of "a plurality" is two or more. In addition, "and / or" in the description and claims means at least one of the connected objects. The character " / " generally means an "or" relationship between the associated objects before and after.

[0052] In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present utility model.

[0053] In the description of the present utility model, it should be noted that, unless otherwise clearly specified and limited, the terms "mounted", "connected", "coupled" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.

[0054] Refer to Figure 1 , a schematic structural diagram of an image sensor according to an embodiment of this application is shown, as Figure 1As shown, the image sensor may include a pixel region 10; the pixel region 10 is provided with a plurality of first pixels 11 and second pixels 12, and the plurality of second pixels 12 are distributed among the plurality of first pixels 11. Among them, the first pixels 11 output first optoelectronic signals, and the first optoelectronic signals can be used to generate a two-dimensional image. The second pixels 12 output second optoelectronic signals, and the second optoelectronic signals can be used to generate a two-dimensional image and depth information.

[0055] In the embodiment of the present application, by providing a plurality of first pixels 11 and second pixels 12 in the pixel region 10 of the image sensor, the first pixels 11 can be used to output first optoelectronic signals, and the first optoelectronic signals can be used to generate a two-dimensional image. The second pixels 12 can be used to output second optoelectronic signals, and the second optoelectronic signals can be used to generate a two-dimensional image and depth information. The depth information can be used for three-dimensional imaging. The first pixels 11 only need to be used to output the first optoelectronic signals that can form a two-dimensional image. The area of the first pixels 11 is small, and the number of first pixels 11 that can be arranged per unit area is large, which is beneficial to obtaining a high-resolution two-dimensional image and realizing functions such as biometric recognition. Moreover, since the area of the first pixels is small, increasing the number of first pixels 11 on the image sensor has a small impact on the overall volume, which is beneficial to the processing and cost control of the image sensor. Further, due to the mixed arrangement of the first pixels and the second pixels, it not only improves the problem of insufficient resolution caused by the large pixels of the image sensor, but also solves the problem that ordinary image sensors cannot obtain depth information.

[0056] As Figure 1 shown, the first pixels 11 can be two-dimensional pixels. The two-dimensional pixels only need to collect the optical signals from the imaging object and output the first optoelectronic signals to obtain a two-dimensional image through the first optoelectronic signals. Generally, in order to achieve a high frame rate, the first optoelectronic signals usually use single exposure. Moreover, in order to obtain high resolution, the number of two-dimensional pixels per unit area is usually large. Correspondingly, the area of a single two-dimensional pixel is small. For example, the length dimension and width dimension of the first pixels 11 are usually 1-2 um, and the resolution of the two-dimensional pixels is usually greater than or equal to 640*480.

[0057] Specifically, the second pixel 12 can be a three-dimensional pixel using the TOF principle. The second pixel 12 can not only collect the optical signal from the imaging object and output the second optoelectronic signal to generate a two-dimensional image according to the second optoelectronic signal, but also calculate the distance from the imaging object to the image sensor based on the second optoelectronic signal it outputs, generate depth information, and obtain a three-dimensional image according to the depth information. Since the second pixel 12 is used to generate depth information, the emitted light pulse is short, the photosensitivity requirement is high, and multiple exposures are required to calculate the depth information, so the area of the second pixel 12 is large, and the length dimension and width dimension of the second pixel 12 are usually 7-8um. That is, due to the different functions and working principles of the second pixel 12 and the first pixel 11, the size of the second pixel 12 is usually different from that of the first pixel 11, and the area of the second pixel 12 is usually greater than or equal to the area of the first pixel 11.

[0058] Exemplarily, the area of the second pixel 12 can be 1.5 times, 2 times, 3 times or 6.6 times the area of the first pixel 11, etc. The embodiment of the present application does not specifically limit the ratio of the area of the second pixel 12 to the area of the first pixel 11.

[0059] In the embodiment of the present application, in order to obtain a two-dimensional image with a higher resolution and implement functions such as biometric recognition, the number of the first pixels 11 should be as large as possible. In practical applications, the number of the first pixels 11 can be made greater than the number of the second pixels 12; and / or, the total area of the multiple first pixels 11 is greater than the total area of the multiple second pixels 12. The embodiment of the present application does not specifically limit the method for improving the resolution of the two-dimensional image.

[0060] As Figure 1 shown, the second pixels 12 are equally spaced along the first direction X and the second direction Y in the pixel area 10 respectively, and the first direction X is perpendicular to the second direction Y to realize the array distribution of the second pixels 12 in the pixel area 10, which is beneficial to the second pixels 12 outputting higher-quality second optoelectronic signals, thereby improving the quality of the two-dimensional image and the depth information. The first pixels 11 are uniformly arranged in the area of the pixel area 10 other than where the second pixels 12 are provided to arrange as many first pixels 11 as possible in the pixel area 10 and improve the resolution of the two-dimensional image.

[0061] As Figure 1 shown, along the first direction X, the distance between two adjacent second pixels 12 is the first distance a; along the second direction Y, the distance between two adjacent second pixels 12 is the second distance b. In a specific application, the second distance b and the first distance a can be equal or unequal, and the embodiment of the present application does not specifically limit this.

[0062] As Figure 1As shown, the pixel region 10 may include a plurality of pixel groups, each pixel group including n second pixels 12 and m first pixels 11, where n >= 1 and m > n. In a specific application, by forming the first pixels 11 and the second pixels 12 into a plurality of pixel groups and independently controlling each pixel group, it is beneficial to improve the control efficiency and control accuracy of the first pixels 11 and the second pixels 12.

[0063] Optionally, the arrangement of the first pixels 11 and the second pixels 12 in the pixel group is the same, so that the second pixels 12 can be arrayed throughout the pixel region 10. a is the number of first pixels 11 in the pixel group along the second direction Y, and b is the number of first pixels 11 spaced between two adjacent pixel groups in the first direction X. In practical applications, the values of a and b can be adjusted as needed to adjust the distribution of the first pixels 11 and the second pixels 12 in the pixel group.

[0064] As Figure 1 shown, at least one second pixel 12 is provided on the pixel group, and the area of the second pixel 12 is larger than the area of the first pixel 11. Since the area of the second pixel 12 is larger, the photosensitive performance of the second pixel 12 is higher, and multiple exposures can be realized to calculate depth information and obtain a three-dimensional image with depth information. Since the area of the first pixel 11 is smaller, as many first pixels 11 as possible can be arranged between the second pixels 12 to obtain a two-dimensional image with high resolution.

[0065] It should be noted that Figure 1 only shows the case where the second pixel 12 occupies the space of two first pixels 11. In practical applications, the second pixel 12 may also occupy the space of 3, 4, or 6 first pixels 11, etc. The embodiments of the present application do not limit this.

[0066] Or, as Figure 10 shown, each pixel group may include a plurality of adjacent second pixels 12, and the area of the second pixel 12 is equal to the area of the first pixel 11, that is, the second pixel 12, like the first pixel 11, adopts a small-size design, about 1 - 3 um. In this way, the problem of reduced image resolution in the area where the second pixel 12 is located can be avoided. In this design, when the two-dimensional pixel 12 is used to calculate the depth, the brightness information for calculating the depth is calculated by adding the pixel brightness in the unit area to achieve the accuracy required for depth calculation. At the same time, the sum of the brightness information of its multiple exposures is also used as two-dimensional image information to participate in the output of the two-dimensional image.

[0067] In some other alternative embodiments of the present application, the arrangement modes of the first pixel 11 and the second pixel 12 in the pixel group may be different, so as to adjust the arrangement modes of the first pixel 11 and the second pixel 12 in each pixel group according to actual needs, and improve the arrangement flexibility of the first pixel 11 and the second pixel 12 in the pixel group.

[0068] As Figure 2 shown, the first pixel 11 may include a first pixel circuit 110 and a first photosensitive region 111. The first pixel circuit 110 may be configured to convert the optical signal projected onto the first photosensitive region 111 into the first optoelectronic signal. The second pixel 12 may include a second pixel circuit 120 and a second photosensitive region 1200. The second pixel circuit 120 may be configured to convert the optical signal projected onto the second photosensitive region 1200 into the second optoelectronic signal.

[0069] As Figure 3 shown, the image sensor may further include a row addressing circuit 13 and a readout circuit 15. The row addressing circuit 13 and the readout circuit 15 are electrically connected to the first pixel circuit 110 and the second pixel circuit 120 respectively. The row addressing circuit 13 may be configured to control the first pixel circuit 110 and the second pixel circuit 120 to output the first optoelectronic signal and the second optoelectronic signal to the readout circuit 15 respectively. The readout circuit 15 may be configured to convert the received first optoelectronic signal and second optoelectronic signal into digital signals. A column addressing circuit 14 is electrically connected to the readout circuit 15. The column addressing circuit 14 may be configured to output the digital signals to a subsequent target circuit, so as to output the two-dimensional image and / or the depth information through the subsequent target circuit.

[0070] It should be noted that, in a specific application, the row addressing circuit 13 may be configured to, after the exposure of the first pixel 11 and / or the second pixel 12 is completed, turn on the row switches of the pixel region row by row, so that the first optoelectronic signal obtained by exposing the first pixel circuit 110 or the second optoelectronic signal obtained by exposing the second pixel circuit 120 enters the readout circuit 15 row by row for signal readout. The column addressing circuit 14 may output the signals obtained by the readout circuit 15 to the subsequent target circuit column by column.

[0071] It should be noted that, in a specific application, the column addressing circuit 14 may also be cancelled according to actual situations. In the case where the column addressing circuit 14 is not provided, the digital signals obtained by the readout circuit 15 may be output to the subsequent target circuit at one time.

[0072] As Figure 4As shown, the first pixels 11 and the second pixels 12 are arranged in an array along the first direction X and the second direction Y respectively, and the second direction Y is perpendicular to the first direction X; the row addressing circuit 13 is arranged at the edge of the pixel area 10 along the first direction X. The row addressing circuit 13 may include a plurality of row addressing lines 131 extending along the first direction X, and each row addressing line 131 is electrically connected to the first pixel circuit 110 of the first pixels 11 and / or the second pixel circuit 120 of the second pixels 12 in its corresponding row.

[0073] In a specific application, row pixel switches 16 may be provided on the first pixel circuit 110 and the second pixel circuit 120, and the row addressing line 131 may be electrically connected to the row pixel switches 16 of the first pixel circuits 110 of all the first pixels 11 and the second pixel circuits 120 of the second pixels 12 in its corresponding row. In this way, the first optoelectronic signal and the second optoelectronic signal obtained by exposing the first pixel circuit 110 and the second pixel circuit 120 can be controlled by the row pixel switches 16 to be output to the readout circuit 15.

[0074] As Figure 4 shown, the readout circuit 15 is arranged at the edge of the pixel area 10 along the second direction Y. The readout circuit 15 is close to the pixel area 10. The readout circuit 15 may include a plurality of readout signal lines 151 extending along the second direction Y. The readout signal lines 151 are respectively connected to the first pixel circuit 110 of the first pixels 11 and / or the second pixel circuit 120 of the second pixels 12 in their corresponding columns. The readout signal lines 151 can read the first optoelectronic signal or the second optoelectronic signal obtained by exposure on the first pixel circuit 110 and / or the second pixel circuit 120 to the readout circuit 15, and convert it into a digital signal through the readout circuit 15. As Figure 4 shown, the first pixel circuit 110 of one first pixel 11 and the second pixel circuit 120 of one second pixel 12 may share the readout signal line 151.

[0075] In one implementation, as Figure 5 shown, each row addressing line 131 is connected to all the row pixel switches 16 of the pixels in this row, where the first pixels 11 and the second pixels 12 use different row pixel switches 16. Since the second pixels 12 need to be exposed multiple times to calculate the depth, to improve the control accuracy, each second pixel circuit 120 is connected to a separate row addressing line 131. That is, the second pixel circuit 120 and the first pixel circuit 110 do not share the row addressing line 131.

[0076] In another implementation, as Figure 6As shown, the second pixel 12 and the first pixel 11 share the row addressing line 131. Since the second pixel 12 needs to output the second optoelectronic signals of two exposures to generate the depth information, the row where the second pixel 12 is located corresponds to at least two first pixels. Therefore, in a specific application, one second pixel circuit 120 shares at least two of the row addressing lines with at least two first pixel circuits 110. That is, in this example, one second pixel circuit 120 is connected to two row addressing lines 131, outputs the values of two exposures respectively, and shares the two row addressing lines 131 with two first pixel circuits 110 respectively.

[0077] It should be noted that, in a specific application, the row addressing line 131 can be as Figure 5 or Figure 6 shown. That is, the first pixel 11 and the second pixel 12 can respectively use separate row addressing lines 131, or share the row addressing line 131. The embodiments of the present application do not make any limitations in this regard.

[0078] Referring to Figure 7 , a schematic structural diagram of a first pixel circuit according to an embodiment of the present application is shown. As Figure 7 shown, the first pixel 11 may include a first photosensitive region 111 and a first floating diffusion region 112. The first pixel circuit 110 may be a 4T pixel circuit. Specifically, the first pixel circuit 110 may include: a first transfer transistor 113, a first reset transistor 114, a first source follower transistor 115, and a first row selection transistor 116; wherein, the gate of the first reset transistor 114 is used to input a reset signal, the drain is connected to a preset voltage source, and the source is connected to the drain of the first transfer transistor 113 and the gate of the first source follower transistor 115; the gate of the first transfer transistor 113 may be used to input a transfer signal, the source of the first transfer transistor 113 is disposed in the first photosensitive region 111, and the drain is disposed in the first floating diffusion region 112; the drain of the first source follower transistor 115 is connected to the preset voltage source, and the source is connected to the drain of the first row selection transistor 116; the gate of the first row selection transistor 116 is connected to the row addressing line 131 for inputting a row selection signal, and the source is connected to the readout signal line 151.

[0079] Specifically, the working process of the first pixel circuit 110 may include the following four working stages: In the first stage, the first reset transistor 114 turns on the input reset signal, and the first transfer transistor 113 and the first row selection transistor 116 are turned off. At this time, the first photosensitive region 111 can be reset. In the second stage, the first reset transistor 114, the first transfer transistor 113, and the first row selection transistor 116 are all turned off. At this time, both the first photosensitive region 111 and the first floating diffusion region 112 can be exposed to light, and the potential drops, starting the exposure. In the third stage, the first reset transistor 114 is turned on, the first transfer transistor 113 is turned off, and the first row selection transistor 116 is turned on. At this time, the reset signal can be input through the first reset transistor 114 to reset the first floating diffusion region 112. In the fourth stage, the first reset transistor 114 is turned off, the first transfer transistor 113 is turned on, and the first row selection transistor 116 is turned on. The electrons in the first photosensitive region 111 are transmitted to the first floating diffusion region 112 through the first transfer transistor 113. After the first floating diffusion region 112 expands, it is then transmitted to the readout circuit 15 through the first source follower transistor 115, the first row selection transistor 116, and the readout signal line 151, so that the readout circuit 15 can perform data reading and conversion.

[0080] In the embodiment of the present application, the second pixel circuit 120 may include two pixel circuit modules. The two pixel circuit modules are respectively connected to two row addressing lines 131. The two pixel circuit modules can be used to respectively generate the second optoelectronic signals obtained by two exposures at different time points. The two row addressing lines 131 can control the switches of the two pixel circuit modules to output the second optoelectronic signals through the readout signal line 151, so as to generate depth information based on the second optoelectronic signals obtained by the two exposures.

[0081] In some alternative embodiments of the present application, the pixel circuit module includes transfer transistors (specifically, Figure 8 the second transfer transistor 121 and the third transfer transistor 125 in ). The second pixel circuit further includes a first diode 129. The first diode 129 is respectively connected to the transfer transistors (the second transfer transistor 121 and the third transfer transistor 125) of the two pixel circuit modules to output the second optoelectronic signals obtained by the divided exposures to the readout circuit 15 through the readout signal line 151.

[0082] Referring to Figure 8 , a schematic structural diagram of a second pixel circuit according to an embodiment of the present application is shown. As Figure 8 shown, the second pixel 12 may include a second photosensitive region and a second floating diffusion region. The second pixel circuit 120 may include two or more 4T pixel circuits (i.e., pixel circuit modules). Specifically, as Figure 8As shown, the second pixel circuit 120 may include: a second transfer transistor 121, a second reset transistor 122, a second source follower transistor 123, a second row selection transistor 124, a third transfer transistor 125, a third reset transistor 126, a third source follower transistor 127, and a third row selection transistor 128. Among them, the gate of the second reset transistor 122 may be used to input a reset signal, the drain is connected to a preset voltage source, and the source is connected to the drain of the second transfer transistor 121 and the gate of the second source follower transistor 123. The gate of the second transfer transistor 121 may be used to input a transfer signal. The source of the second transfer transistor 121 is disposed in the second photosensitive region, which is equivalent to being connected to the output end of the first diode 129. The drain is disposed in the second floating diffusion region, which is equivalent to connecting a first capacitor 1210 between the drain and the ground terminal. The drain of the second source follower transistor 123 is connected to the preset voltage source, and the source is connected to the drain of the second row selection transistor 124. The gate of the second row selection transistor 124 is connected to the row addressing line 131 for inputting a row selection signal, and the source is connected to the readout signal line 151. The gate of the third reset transistor 126 may be used to input a reset signal, the drain is connected to a preset voltage source, and the source is connected to the drain of the third transfer transistor 125 and the gate of the third source follower transistor 127. The gate of the third transfer transistor 125 may be used to input a transfer signal. The source of the third transfer transistor 125 is disposed in the second photosensitive region, which is equivalent to being connected to the output end of the first diode 129, and the drain is disposed in the second floating diffusion region, which is equivalent to connecting a second capacitor 1211 between the drain and the ground terminal. The drain of the third source follower transistor 127 is connected to the preset voltage source, and the source is connected to the drain of the third row selection transistor 128. The gate of the third row selection transistor 128 is connected to the row addressing line 131 for inputting a row selection signal, and the source is connected to the readout signal line 151.

[0083] It should be noted that the second transfer transistor 121, the second reset transistor 122, the second source follower transistor 123, and the second row selection transistor 124 may form a 4T pixel circuit (pixel circuit module). The third transfer transistor 125, the third reset transistor 126, the third source follower transistor 127, and the third row selection transistor 128 may form a 4T pixel circuit (pixel circuit module). The working process of each 4T pixel circuit is similar to that of the 4T pixel circuit shown in Figure 7 and will not be elaborated here.

[0084] As Figure 8As shown, the second pixel circuit 120 may further include: a first diode 129, a first capacitor 1210, and a second capacitor 1211. One end of the first diode 129 is connected to the negative power supply voltage access terminal (such as the ground terminal), and the other end of the first diode 129 is connected to the source of the second transfer transistor 121. The first capacitor 1210 is connected between the drain of the second transfer transistor 121 and the negative power supply voltage access terminal; the second capacitor 1211 is connected between the drain of the third transfer transistor 125 and the negative power supply voltage access terminal.

[0085] In a specific application, each 3D pixel includes 2 (or more) 4T pixel circuits. The first diode 129 controls the second transfer transistor 121 and the third transfer transistor 125 to turn on in sequence, that is, the second transfer transistor 121 and the third transfer transistor 125 are connected in sequence, and the charges obtained from two exposures at different time points are stored on the first capacitor 1210 and the second capacitor 1211, and are quantized and given by two 4T pixel circuits respectively. The second row selection transistor 124 and the third row selection transistor 128 (equivalent to the switches of the two pixel circuit modules) are connected to two row addressing lines 131 for reading. In this way, the two pixel circuit modules can be respectively connected to two row addressing lines 131, and are respectively row addressed and then output.

[0086] In another embodiment, as Figure 8 shown, each second pixel 12 only needs one selection signal, and only needs one row addressing line 131 to control the second row selection transistor 124 and the third row selection transistor 128, and the follower transistor 123 and the third source follower transistor 127 are used to output signals in sequence.

[0087] In this embodiment, the exposure of the second pixel 12 needs to be coordinated with the light emission timing of the light source, and the relative timing relationship is determined according to the shooting target distance (such as taking a picture of a face with a handheld mobile phone). The first pixel 11 does not need to be precisely timed with the light source, and long exposure can be performed.

[0088] Referring to Figure 9 , a working timing diagram of the image sensor according to the embodiment of the present application is shown. As Figure 9 shown, LD is the light source emission timing. In the figure, there are only two light emission pulses as a cycle. In actual operation, there are multiple light emission pulses in one cycle, and multiple acquisitions are used to increase the integration value of the diode. The first pixel 11 will be always on during the entire light emission cycle. If high frame rate is pursued, it can also be turned on and off multiple times in one cycle. The exposure of the second pixel 12 can be divided into multiple timings, and the number of timings is determined by the structure of the second pixel circuit 120. For example, as Figure 8As shown, when the second pixel circuit 120 includes two 4T pixel circuits, correspondingly, the second pixel 12 may include Figure 9 The two timings of the second pixel A and the second pixel B shown. The relationship between the exposure timing of LD and the second pixel 12 is related to the detection target distance range. The two timings generally have a 180-degree phase deviation. Since the two exposures share a first diode 129, the two exposure timings cannot overlap.

[0089] In the embodiment of the present application, the image sensor can finally generate a two-dimensional image and a three-dimensional image generated according to depth information at the same time. Among them, the image at the position of the second pixel 12 in the two-dimensional image will perform summation processing on multiple exposures, and perform calibration and normalization, which is used as the pixel value of the two-dimensional image at this position. At the same time, because the area of the second pixel is relatively large, the resolution may be lost. Therefore, it is necessary to fit the pixels at this position with the surrounding positions to expand the resolution.

[0090] For example, if the second pixel 12 occupies the area of two first pixels 11, when outputting the two-dimensional image, the second pixel 12 can be fitted into two first pixels 11 for image output. The three-dimensional image is calculated according to the exposure values obtained from the first exposure and the second exposure. Since the three-dimensional image may need to be accumulated multiple times, the output frame rate may be lower than that of the two-dimensional image, that is, the output frame rate of the two-dimensional image may be different from that of the three-dimensional image.

[0091] Referring to Figure 11 , a schematic structural diagram of another second pixel circuit according to the embodiment of the present application is shown. Figure 11 The second pixel circuit 120 shown can be used for Figure 10 The second pixel 12 shown. As Figure 11As shown, the second pixel circuit 120 may include a second diode 1215, a third diode 1216, a first switch 1212, a second switch 1213, and a third switch 1214. The first switch 1212, the second switch 1213, and the third switch 1214 may be constituted by transistors. The output terminal of the second diode 1215 is sequentially connected to the transfer transistor (i.e., the second transfer transistor 121) of one of the pixel circuit modules through the first switch 1212 and the second switch 1213. The output terminal of the third diode 1216 is connected between the first switch 1212 and the second switch 1213 (i.e., the output terminal of the first switch 1212 or the input terminal of the second switch 1213), and is simultaneously connected to the transfer transistor (i.e., the third transfer transistor 125) of the other pixel circuit module. The third switch 1214 is connected between the output terminal of the second diode 1215 and the input terminal (i.e., the source of the transfer transistor 121) of the transfer transistor 121 of one of the pixel circuit modules. When the third switch 1214 is turned on and the first switch 1212 and the second switch 1213 are turned off, the first pixel circuit 110 multiplexes one of the two pixel circuit modules, so that the second optoelectronic signal output by the pixel circuit module in the second pixel circuit can be used to generate a two-dimensional image and can also be used to generate depth information.

[0092] As Figure 11 As shown, the second pixel circuit 120 may include: a first switch 1212, a second switch 1213, a third switch 1214, a second diode 1215, and a third diode 1216. Among them, the input terminal (i.e., the source of the third switching transistor) of the first switch 1212 is connected to the output terminal of the second diode 1215. The output terminal (i.e., the drain of the first switching transistor) of the first switch 1212 is connected to the source of the third transfer transistor 125 and the input terminal (i.e., the source of the second switching transistor) of the second switch 1213. The gate of the first switch 1212 may be used to access a switching signal. The output terminal (i.e., the drain of the second switching transistor) of the second switch 1213 is connected to the source of the second transfer transistor 121. The gate of the second switch 1213 may be used to access a switching signal. The input terminal (i.e., the source of the third switching transistor) of the third switch 1214 is connected to the output terminal of the second diode 1215. The output terminal (i.e., the drain of the third switching transistor) of the third switch 1214 is connected to the source of the second transfer transistor 121. The gate of the third switch 1214 may be used to access a switching signal. One end of the second diode 1215 is connected to the negative power supply voltage access terminal, and the other end (i.e., the output terminal) is between the input terminal of the first switch 1212 and the input terminal of the third switch 1214 respectively. One end of the third diode 1216 is connected to the negative power supply voltage access terminal, and the other end (i.e., the output terminal) is connected to the source of the third transfer transistor 125 and the input terminal of the second switch 1213 respectively.

[0093] In a specific application, such as Figure 10 As shown, the charge quantization process of the multiple second pixels 12 in each pixel group can be controlled by the first switch 1212, the second switch 1213, and the third switch 1214. For example, when the second pixel 12 is used for imaging a two-dimensional image, the first switch 1212 and the second switch 1213 can be turned off, and the third switch 1214 can be turned on. That is, the first pixel circuit can reuse the pixel circuit module composed of the second diode 1215, the second transfer transistor 121, the second reset transistor 122, the first capacitor 1210, the second source follower transistor 123, and the second row selection transistor 124; the first pixel circuit can also reuse the pixel circuit module composed of the third diode 1216, the third transfer transistor 125, the second capacitor 1211, the third reset transistor 126, the third source follower transistor 127, and the third row selection transistor 128. In this way, the second diode 1215 and the third diode 1216 are independently exposed and quantized, which is consistent with the two-dimensional pixel exposure. Another example is that when the second pixel 12 is used for imaging a three-dimensional image, the third switch 1214 can be turned off, and the first switch 1212 and the second switch 1213 can be turned on. At this time, the pixel charges of the second diode 1215 and the third diode 1216 are gathered together for quantization to obtain a three-dimensional image.

[0094] It should be noted that in this embodiment, the closing of the switch means the switch is disconnected, the opening of the switch means the switch is connected, and the diode is a photodiode.

[0095] In summary, the image sensor described in the embodiments of the present application has at least the following advantages:

[0096] In the embodiments of the present application, by providing a plurality of first pixels and second pixels in the pixel region of the image sensor, the first pixel can be used to output a first optoelectronic signal, the first optoelectronic signal can be used to generate a two-dimensional image, the second pixel can be used to output a second optoelectronic signal, the second optoelectronic signal can be used to generate a two-dimensional image and depth information, and the depth information can be used for three-dimensional imaging. Since the first pixel only needs to output the first optoelectronic signal that can form a two-dimensional image, the area of the first pixel is small, and the number of the first pixels that can be arranged per unit area is large, which is beneficial to obtaining a high-resolution two-dimensional image and realizing functions such as biometric recognition. Moreover, since the area of the first pixel is small, increasing the number of the first pixels on the image sensor has a small impact on the overall volume, which is beneficial to the processing and cost control of the image sensor. Further, due to the mixed arrangement of the first pixel and the second pixel, it not only improves the problem of insufficient resolution caused by the large pixels of the image sensor, but also solves the problem that a common image sensor cannot obtain depth information.

[0097] The embodiment of the present application also provides a lens assembly, which may specifically include: a bracket, a lens, a circuit board, and the image sensor described in any one of the above; wherein, a through hole is provided in the bracket, and the lens is disposed in the through hole; the circuit board is connected to the bracket; the image sensor is connected to the bracket and is opposite to the lens.

[0098] It should be noted that the structure of the image sensor described in the embodiment of the present application is the same as that of the image sensor described in any one of the above embodiments, and its beneficial effects are also similar, so details are not described herein.

[0099] The embodiment of the present application also provides an electronic device, which may include the image sensor described in any one of the above embodiments, or the electronic device may include the lens assembly described in any one of the above embodiments.

[0100] In the embodiment of the present application, the electronic device may include but is not limited to mobile phones, tablet computers, wearable devices, etc. The embodiment of the present application does not specifically limit the specific type of the electronic device.

[0101] Referring to Figure 12 , a step flowchart of an imaging method described in the embodiment of the present application is shown. The imaging method may be implemented by using the image sensor described in any one of the above embodiments. As Figure 12 described, the imaging method may specifically include the following steps:

[0102] Step 1201: Obtain a first pixel value according to the first photoelectric signal output by the first pixel.

[0103] In the embodiment of the present application, the first pixel 11 may be a two-dimensional pixel, and the two-dimensional pixel may collect light intensity information and output a first photoelectric signal. In a specific application, a first pixel value may be obtained according to the first photoelectric signal, so as to generate a two-dimensional image according to the first pixel value.

[0104] Step 1202: Obtain a second pixel value and depth information according to the second photoelectric signal output by the second pixel.

[0105] In the embodiment of the present application, the second pixel 12 may be a three-dimensional pixel using the TOF principle. The second pixel 12 can not only collect light intensity information and output a second photoelectric signal to obtain a second pixel value capable of generating a two-dimensional image according to the second photoelectric signal, but also calculate the distance of the imaging object according to the second photoelectric signal output by it to obtain depth information, so as to obtain a three-dimensional image according to the depth information.

[0106] Step 1203: Generate a two-dimensional image based on the first pixel value and the second pixel value; and / or, generate a three-dimensional image based on the second pixel value and the depth information.

[0107] In the embodiments of the present application, in the case where only the image sensor is required to generate a two-dimensional image, a two-dimensional image can be generated based on the first pixel value and the second pixel value. In the case where only the image sensor is required to generate a three-dimensional image, a three-dimensional image can be generated based on the second pixel value and the depth information. In the case where the image sensor is required to generate both a two-dimensional image and a three-dimensional image simultaneously, a two-dimensional image can be generated based on the first pixel value and the second pixel value, and a three-dimensional image can be generated based on the second pixel value and the depth information. In practical applications, the generated two-dimensional image or three-dimensional image can be used for biometric identification, such as face recognition, iris recognition, fingerprint recognition, etc.; the generated three-dimensional image can be used for anti-counterfeiting detection.

[0108] In some alternative embodiments of the present application, the first pixel performs one exposure according to the first exposure time T1 to output the first photoelectric signal, and the second pixel performs n exposures according to the second exposure time T2 to output the second photoelectric signal.

[0109] The step of generating a two-dimensional image based on the first pixel value and the second pixel value may include the following sub-steps:

[0110] Sub-step S11: Normalize the second pixel value according to the first exposure time T1 and the second exposure time T2 to obtain a processed second pixel value.

[0111] In the embodiments of the present application, the generated two-dimensional image needs to be based on the second pixel value output by the second pixel, and the second pixel value is obtained through multiple exposure summation processing. Therefore, the exposure times for generating the first pixel value and the second pixel value are different. Therefore, normalization processing is required. Specifically, for the second pixel value m: (n * T2) = processed second pixel value m': T1, that is, the second pixel value needs to be converted to a pixel value when the exposure time is normalized to the same standard as the first exposure time.

[0112] Sub-step S12: Generate the two-dimensional image based on the first pixel value and the processed second pixel value.

[0113] In the embodiments of the present application, the two-dimensional image can be generated based on the first pixel value and the processed second pixel value. Since the processed second pixel value is calibrated and normalized with reference to the first pixel value obtained by the exposure time of the first pixel 11, the image at the position of the second pixel 12 can achieve a better normalization effect with the image at the position of the first pixel 11. Therefore, the image quality of the two-dimensional image generated based on the second pixel value and the first pixel value is better, which is beneficial to biometric recognition based on the two-dimensional image.

[0114] In an alternative embodiment of the present application, the area of the second pixel 12 occupies the area of q first pixels 11; then the step of generating a two-dimensional image based on the first pixel value and the second pixel value may include the following sub-steps:

[0115] Sub-step S21: For each of the second pixels, fit the second pixel value of the second pixel with the first pixel values in its surrounding area to obtain q converted second pixel values; the surrounding area includes at least one first pixel.

[0116] In the embodiments of the present application, since the area of the second pixel 12 is relatively large and occupies the area of q first pixels 11, it is necessary to convert the second pixel value at this position into multiple pixel values of the same number to expand the resolution. For example, when the second pixel 12 occupies the area of 2 first pixels 11, the initial second pixel value needs to be converted into 2 second pixel values to achieve resolution expansion.

[0117] In a specific application, when converting the second pixel value into multiple pixel values of the same number, considering the first pixel values in the surrounding area of the second pixel, the converted result is closer to the real pixel value, improving the image quality. The surrounding area may include the first pixel values of at least one first pixel above, below, left, and right. It can be split after fitting. For example, a weighted sum of a second pixel value and the first pixel values in the surrounding area is calculated and then evenly split into q converted second pixel values. It can also be directly fitted with different surrounding areas to directly obtain multiple fitting results as q converted second pixel values. For example, if the second pixel 12 occupies two first pixels 11, it is fitted with the pixel values in the surrounding upper area as one converted second pixel value, and then fitted with the pixel values in the surrounding upper area as another converted second pixel value; another example is that if the second pixel 12 occupies 4 first pixels 11, it is respectively fitted with the pixel values in the surrounding upper, lower, left, and right 4 areas to obtain 4 converted second pixel values.

[0118] Sub-step S22: Generate the two-dimensional image based on the first pixel value of each first pixel and the q converted second pixel values corresponding to each second pixel.

[0119] In the embodiments of the present application, the two-dimensional image can be generated based on the first pixel value obtained from the first pixel 11 and the q converted second pixel values corresponding to each second pixel, so as to achieve the expansion of the resolution of the two-dimensional image.

[0120] Optionally, the output frame rate of the two-dimensional image is less than the output frame rate of the three-dimensional image.

[0121] In the embodiments of the present application, since the three-dimensional image needs to be calculated based on the exposure values obtained from the first exposure and the second exposure, therefore, the second pixel values obtained by the second pixel 12 may need to be accumulated multiple times, so the output frame rate may be lower than that of the two-dimensional image, that is to say, the output frame rate of the three-dimensional image may be different from that of the two-dimensional image. Generally, the output frame rate of the three-dimensional image is less than the output frame rate of the two-dimensional image.

[0122] In the description of this specification, the descriptions with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0123] Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present invention. The scope of the present invention is defined by the claims and their equivalents.

Claims

1. An image sensor, characterized in that, The image sensor includes a pixel region (10); the pixel region (10) is provided with a plurality of first pixels (11) and second pixels (12), and the plurality of second pixels (12) are distributed among the plurality of first pixels (11). Among them, the first pixel (11) outputs a first optoelectronic signal, and the first optoelectronic signal is used to generate a two-dimensional image. The second pixel (12) outputs a second optoelectronic signal, and the second optoelectronic signal is used to generate a two-dimensional image and depth information.

2. The image sensor according to claim 1, wherein The image sensor satisfies any one or more of the following conditions: The area of the first pixel (11) is less than or equal to the area of the second pixel (12); The number of the first pixels is greater than the number of the second pixels; The total area of the plurality of first pixels (11) is greater than the total area of the plurality of second pixels (12).

3. The image sensor according to claim 1, wherein The second pixels (12) are equally spaced and distributed along a first direction (X) and a second direction (Y) in the pixel region (10), and the first direction (X) is perpendicular to the second direction (Y).

4. The image sensor according to claim 1, characterized in that The pixel region (10) includes a plurality of pixel groups, and each pixel group includes n second pixels (12) and m first pixels (11), where n >= 1 and m > n.

5. The image sensor according to claim 4, wherein The arrangement of the first pixels (11) and the second pixels (12) in the pixel group is the same or different.

6. The image sensor according to claim 4, wherein The area of the second pixel (12) is greater than the area of the first pixel (11); Alternatively, each pixel group includes a plurality of adjacent second pixels (12), and the area of the second pixel (12) is equal to the area of the first pixel (11).

7. The image sensor according to any one of claims 1 to 6, characterized in that, The first pixel (11) is provided with a first pixel circuit (110), and the first pixel circuit (110) is used to convert the optical signal projected onto the first pixel (11) into the first optoelectronic signal. The second pixel (12) is provided with a second pixel circuit (120), and the second pixel circuit (120) is used to convert the optical signal projected onto the second pixel (12) into the second optoelectronic signal; The image sensor further includes a row addressing circuit (13) and a readout circuit (15). The row addressing circuit (13) and the readout circuit (15) are electrically connected to the first pixel circuit (110) and the second pixel circuit (120) respectively. The row addressing circuit (13) is used to control the first pixel circuit (110) and the second pixel circuit (120) to output the first optoelectronic signal and the second optoelectronic signal to the readout circuit (15) respectively.

8. The image sensor according to claim 7, wherein, The first pixels (11) and the second pixels (12) are arranged in an array along a first direction (X) and a second direction (Y) respectively, and the second direction (Y) is perpendicular to the first direction (X); The row addressing circuit (13) is disposed at an edge of the pixel region (10) along the first direction (X). The row addressing circuit (13) includes a plurality of row addressing lines (131) extending along the first direction (X), and each row addressing line (131) is electrically connected to the first pixel circuit (110) of the first pixel (11) and / or the second pixel circuit (120) of the second pixel (12) in its corresponding row. The readout circuit (15) is disposed at an edge of the pixel region (10) along the second direction (Y). The readout circuit (15) includes a plurality of readout signal lines (151) extending along the second direction (Y), and the readout signal lines (151) are respectively connected to the first pixel circuit (110) of the first pixel (11) and / or the second pixel circuit (120) of the second pixel (12) in their corresponding columns.

9. The image sensor according to claim 8, wherein One of the second pixel circuits (120) shares at least two of the row addressing lines (131) with at least two of the first pixel circuits (110).

10. The image sensor according to claim 8, wherein, The second pixel circuit includes two pixel circuit modules. The two pixel circuit modules are respectively connected to one or two of the row addressing lines (131). The two pixel circuit modules are configured to respectively generate second optoelectronic signals obtained by two exposures at different time points. The row addressing line (131) controls the switches of the two pixel circuit modules to output the second optoelectronic signals through the readout signal line (151).

11. The image sensor according to claim 10, wherein The pixel circuit module includes a transfer transistor (121 / 125). The second pixel circuit further includes a first diode (129), and the first diode (129) is respectively connected to the transfer transistors (121 / 125) of the two pixel circuit modules.

12. The image sensor according to claim 10, wherein, The pixel circuit module includes a transfer transistor (121 / 125). The second pixel circuit further includes a second diode (1215), a third diode (1216), a first switch (1212), a second switch (1213), and a third switch (1214). The output end of the second diode (1215) is sequentially connected to the transfer transistor (121) of one of the pixel circuit modules through the first switch (1212) and the second switch (1213). The output end of the third diode (1216) is connected between the first switch (1212) and the second switch (1213), and is simultaneously connected to the transfer transistor (125) of the other pixel circuit module. The third switch (1214) is connected between the output end of the second diode (1215) and the input end of the transfer transistor (121) of one of the pixel circuit modules. When the third switch is turned on and the first switch (1212) and the second switch (1213) are turned off, the first pixel circuit multiplexes one of the two pixel circuit modules.

13. A lens assembly, characterized in that, The lens assembly includes: a bracket, a lens, a circuit board, and the image sensor according to any one of claims 1 to 12; wherein, a through hole is provided in the bracket, and the lens is disposed in the through hole; the circuit board is connected to the bracket; the image sensor is connected to the bracket and is opposite to the lens.

14. An electronic device, characterized in that, The electronic device includes the image sensor according to any one of claims 1 to 12; Alternatively, the electronic device includes the lens assembly according to claim 13.

Images