Electronic device

Abstract

The utility model relates to an electronic device. The device includes a transparent layer, a substrate layer, a sensor element between the transparent layer and the substrate layer, a first light shielding material layer on a side of the substrate layer opposite the transparent layer, and a second light shielding material layer covering five faces of the device. The first and second light shielding material layers prevent light from entering the sides of the device or from passing through the substrate layer and reflecting toward the sensor element.

Description

Technical Field

[0001] The present disclosure relates to an apparatus having a light-shielding material, and more particularly, to a light-shielding package for an optical sensing device. Background Art

[0002] An optical sensor package is a device capable of converting light into an electrical signal. Generally, an optical sensor package is a cavity-type package having a glass layer on a bismaleimide triazine (BT) substrate and a cavity or space between the glass layer and a semiconductor chip on the BT substrate. In operation, light entering the optical sensor package through the glass layer is detected by the semiconductor chip, while light directed at the BT substrate on the side of the cavity is blocked from entering the cavity and is prevented from being detected by the semiconductor chip. This reduces light interference, thereby optimizing the performance of the optical sensor.

[0003] However, known optical sensor packages have critical drawbacks. For example, the presence of a cavity in the package results in a relatively large size of the package, which is contrary to the general market trend towards smaller electronic devices. In other words, in modern electronic devices, space is very precious, which makes a larger package clearly not preferred. In some products, a low-profile optical sensor package has the form factor of an electronic device, so a larger package may not be available. Summary of the Utility Model

[0004] The present disclosure relates to an optical sensor package having a light-shielding material covering five surfaces. More specifically, the optical sensor package includes a transparent layer on a substrate layer, wherein a sensor element is located between the transparent layer and the substrate layer. Although the outer surface of the transparent layer remains uncovered, each of the other five surfaces of the optical sensor package is covered with a layer of light-shielding material. The transparent layer may be glass.

[0005] The layer of light-shielding material on the sidewall of the optical sensor package prevents light from entering the optical sensor package through the sidewall of the transparent layer and being detected by the sensor element. Additionally, the layer of light-shielding material on the surface of the optical sensor package opposite the uncovered surface prevents light from passing through the substrate layer and reflecting towards the sensor element. When the sensor element detects light from the sidewall or light reflected through the substrate layer, unnecessary signal noise is generated, which affects the performance of the optical sensor package.

[0006] The present disclosure overcomes the deficiencies of the prior art. Since the sidewalls of the transparent layer or glass layer are covered with a layer of light-shielding material, the cavity within the package can be eliminated. Therefore, the optical sensor package of the present disclosure can maintain a relatively small size while preventing light from entering through the sidewalls and the substrate layer of the optical sensor package. Description of the Drawings

[0007] To better understand the present disclosure, reference will now be made to the accompanying drawings, which describe one or more embodiments by way of example only. In the drawings, like reference numerals identify similar elements or operations. In some of the figures, the structures are drawn to scale. In other figures, the dimensions and relative positions of the elements in the drawings are not necessarily drawn to scale. For example, the dimensions, shapes, and angles of various elements may be enlarged and positioned in the figures to improve the readability of the drawings.

[0008] Figure 1 is a cross-sectional view of an optical sensor package having a light-shielding material covering five faces.

[0009] Figures 2A - 2F is an embodiment of a method for assembling Figure 1 the optical sensor package therein. Detailed Description

[0010] Figure 1 An electronic device 100 includes a substrate layer 102 and a transparent layer 104 on the substrate layer 102. A sensor element 106 is embedded or otherwise formed in the substrate layer 102, in a first surface 102a and located between the first surface 102a of the substrate layer 102 and the transparent layer 104. An inner first light-shielding material layer 108 covers a second surface 102b of the substrate layer 102.

[0011] A through-silicon via (TSV) 110 extends from the second surface 102b of the substrate layer 102 to the first surface 102a. An outer second light-shielding material layer 116 completely covers the bottom surface and sidewalls of the electronic device 100. The outer light-shielding material layer 116 is spaced apart from the second surface 102b of the substrate layer 102 by the first light-shielding material layer. Although not shown in the cross-sectional view, all four lateral sidewalls of the electronic device 100 are covered by the outer light-shielding material layer 116. The four lateral sidewalls include Figure 1 a first sidewall 100L and a second sidewall 100R therein. The first sidewall 100L includes a first sidewall 102L of the substrate layer 102, a first sidewall 104L of the transparent layer 104, and a first sidewall 108L of the first light-shielding material layer 108. The first sidewall 102L of the substrate layer 102, the first sidewall 104L of the transparent layer 104, and the first sidewall 108L of the first light-shielding material layer 108 are coplanar. The first sidewall 100L is covered by a first portion 116L of the outer light-shielding material layer 116. The second sidewall 100R includes a second sidewall 102R of the substrate layer 102, a second sidewall 104R of the transparent layer 104, and a second sidewall 108R of the first light-shielding material layer 108. The second sidewall 102R of the substrate layer 102, the second sidewall 104R of the transparent layer 104, and the second sidewall 108R of the first light-shielding material layer 108 are coplanar. The second sidewall 100R is covered by a second portion 116R of the outer light-shielding material layer 116.

[0012] The substrate layer 102 can be silicon and the thickness can be in the range of 50 to 200 micrometers. The transparent layer 104 can be glass and the thickness can be in the range of 100 to 500 micrometers.

[0013] In some embodiments, the sensor element 106 can be used for light sensing or image sensing. The sensor element 106 is formed in the substrate layer 102 and is coplanar with the first surface 102a.

[0014] The first light-shielding material layer 108 completely covers the second surface 102b of the substrate layer 102 and prevents light from passing through the substrate layer 102 and reflecting towards the sensor element 106 (which generates signal noise).

[0015] The TSV 110 extends through both the first light-shielding material layer 108 and the substrate layer 102. Although Figure 1 only two TSVs 110 are shown, embodiments can include more or fewer TSVs 110. The first portion 120 of each TSV 110 extends from the second surface 102b of the substrate layer 102 to the first surface 102a along a first direction. The thickness of the first portion 120 along a second direction transverse to the first direction can be in the range of 15 to 50 micrometers. The first portion 120 of each TSV 110 is at least partially filled with air or includes an unfilled gap. According to an embodiment, the second portion 122 of each TSV 110 (which can be an opening in the first light-shielding material layer 108) extends through the first light-shielding material layer 108 between the first surface 108a and the second surface 108b of the first light-shielding material layer 108. The first surface 108a of the first light-shielding material layer 108 contacts the second surface 102b of the substrate layer 102. The second surface 108b of the first light-shielding material layer 108 is located between the first surface 108a of the first light-shielding material layer 108 and the second light-shielding material layer. The second portion 122 can be wider than the first portion 120 along the second direction.

[0016] In other words, an opening 126 is formed in the first light-shielding material layer. The opening 126 is wider than the first portion 120 of the TSV 110 in the second direction. The second portion 122 can completely cover the opening 128 of the first portion 120 and can further extend onto the substrate layer 102 on both sides of the opening of the first portion 120, from the first sidewall 122L to the second sidewall 122R of the second portion 122 of the TSV 110.

[0017] A dielectric layer 112 (which can be an oxide layer) covers the sidewalls of each first portion 120 and each second portion 122 of each TSV 110. The dielectric layer 112 covers the second surface 108b of the first light-shielding material layer 108. The dielectric layer 112 can extend between the plurality of TSVs 110. According to an embodiment, the dielectric layer 112 completely covers the second surface 108b and the sidewalls of each first portion 120 and each second portion 122 of each TSV 110.

[0018] A redistribution layer 114 including conductive and dielectric components pads the inner surface of each TSV 110. In other words, the redistribution layer 114 covers the dielectric layer 112 on the sidewalls 120L and 120R of each first portion 120 and the sidewalls 122L and 122R of each second portion 122 of each TSV 110. The redistribution layer 114 also covers the first surface 102a of each TSV 110 closest to the substrate layer 102 or the end surface 110a located at the first surface 102a of the substrate layer 102. In some embodiments, the redistribution layer 114 completely covers the end surface 110a. The redistribution layer 114 extends onto the dielectric layer 112 covering the first light-shielding material layer 108, but only partially covers the dielectric layer 112. That is, the redistribution layer 114 does not extend between adjacent TSVs 110. A portion of the dielectric layer 112 between adjacent TSVs 110 remains uncovered by the redistribution layer 114, thereby forming a gap 130 between two contact regions 114c of the redistribution layer 114. The redistribution layer 114 does not extend to the sidewalls 100L and 100R of the electronic device 100. Instead, the redistribution layer 114 only extends halfway between each TSV 110 and the sidewalls 100L and 100R.

[0019] Contacts 118 (which include conductive and dielectric components) are embedded in the substrate layer 102 and are coplanar with the first surface 102a. The contacts 118 are coupled to the redistribution layer 114 on the inner surface of the TSVs 110. The contacts 118 can be wider than the first portion 120 of each TSV 110 in the second direction.

[0020] The outer light-shielding material layer 116 covers the electronic device 110 on five sides. That is, the outer light-shielding material layer 116 covers each sidewall of the electronic device 100, including each sidewall of the transparent layer 104 and each sidewall of the substrate layer 102. As Figure 1 shown, the first portion 116L of the light-shielding material 116 covers the left sidewall 100L of the electronic device 100, and the second portion 116R of the light-shielding material 116 covers the right sidewall 100R of the electronic device 110. The thickness of the first portion 116L and the second portion 116R of the outer light-shielding material layer 116 can be in the range of 20 to 40 micrometers.

[0021] The outer light-shielding material layer 116 includes a portion 116B on the side of the electronic device 100 opposite to the transparent layer 104, which covers the second surface 102b of the substrate layer 102 and the first light-shielding material layer 108, the dielectric layer 112, and a portion of the redistribution layer 114. A portion of the contact region 114c of the redistribution layer 114 is not covered by the outer light-shielding material layer 116. The solder ball 124 is coupled to the contact region 114c of the redistribution layer 114, specifically, to a portion of the contact region 114c not covered by the outer light-shielding material layer 116.

[0022] The outer light shielding material layer 116 prevents light from entering the electronic device 100 through the sidewall and prevents the light from being detected by the sensor element 106 and generating signal noise.

[0023] Figure 2 is the assembly Figure 1 The method of the optical sensor package 100. The method Figure 2A , starting from electronic device 100. The electronic device 100 includes: a substrate layer 102 having a first surface 102a and a second surface 102b; a transparent layer 104 having a first surface 104a and a second surface 104b, wherein the second surface 104b of the transparent layer 104 contacts the first surface 102a of the substrate layer 102; a plurality of sensor elements 106 embedded or otherwise formed in the substrate layer 102, the sensor elements 106 being coplanar with the first surface 102a of the substrate layer 102; a plurality of contacts 118, which include conductive and dielectric components and are embedded or otherwise formed in the substrate layer 102, the contacts 118 being coplanar with the first surface 102a of the substrate layer 102 and the sensor elements 106; a processing carrier 134, which can provide support for the electronic device during the manufacturing process and reduce the possibility of warping of the transparent layer 104; and a temporary bonding material 132 located between the first surface 104a of the transparent layer 104 and the processing carrier 134, the temporary bonding material 132 attaching the transparent layer 104 to the processing carrier 134.

[0024] The first sidewall 102L of the substrate layer 102 and the first sidewall 104L of the transparent layer 104 are coplanar. The second sidewall 102R of the substrate layer 102 and the second sidewall 104R of the transparent layer 104 are coplanar.

[0025] The substrate layer 102 may be silicon and may have a thickness in the range of 50 to 200 microns. The transparent layer 104 may be glass and may have a thickness in the range of 100 to 500 microns.

[0026] Each of the plurality of sensor elements 106 is located between two of the plurality of contacts 118. One of the plurality of contacts 118 is located between the first sidewall 102L of the substrate layer 102 and the sensor element 106 closest to the first sidewall 102L of the substrate layer 102. One of the plurality of contacts 118 is located between the second sidewall 102R of the substrate layer 102 and the sensor element 106 closest to the second sidewall 102R of the substrate layer 102. Two contacts 118 are located between adjacent sensor elements 106. Although Figure 2A including two sensor elements 106 and four contacts 118, embodiments may include more or fewer sensor elements 106. Similarly, embodiments may include more or fewer contacts 118.

[0027] Reference Figure 2B , an inner first light-shielding material layer 108 is formed on the second surface 102b of the substrate layer 102. The first light-shielding material layer 108 includes a plurality of openings 126. The plurality of openings 126 are aligned with the plurality of contacts 118 along a first direction. That is, there may be the same number of openings 126 and contacts 118, where each opening 126 corresponds to one contact 118. Although Figure 2B including four openings 126, embodiments may include more or fewer openings 126.

[0028] The first light-shielding material layer 108 may be formed by spraying.

[0029] The first sidewall 108L of the first light-shielding material layer 108 is coplanar with the first sidewall 102L of the substrate layer 102 and the first sidewall 104L of the transparent layer 104. The second sidewall 108R of the first light-shielding material layer 108 is coplanar with the second sidewall 102R of the substrate layer 102 and the second sidewall 104R of the transparent layer 104.

[0030] Reference Figure 2C, a plurality of TSVs 110 are formed in the substrate layer 102 by a process such as etching. The TSVs 110 are formed in the openings 126 of the first light-shielding material layer 108. Each TSV 110 includes a first portion 120 and a second portion 122. The first portion 120 of each TSV 110 extends from the second surface 102b to the contact 118 in the substrate layer 102 along a first direction. The thickness of the first portion 120 along a second direction transverse to the first direction may be in the range of 15 to 50 micrometers. The second portion 122 of each TSV 110 is the opening 126 in the first light-shielding material layer 108 and extends from the first surface 108a of the first light-shielding material layer 108 to the second surface 108b. The first surface 108a of the first light-shielding material layer 108 contacts the second surface 102b of the substrate layer 102. The second portion 122 may be wider than the first portion 120 along the second direction. The second portion 122 may completely cover the opening 128 of the first portion 120 and may further extend onto the substrate layer 102 on both sides of the opening of the first portion 120, from the first sidewall 122L to the second sidewall 122R of the second portion 122 of the TSV 110.

[0031] Although Figure 2C including four TSVs 110, embodiments may include more or fewer TSVs 110.

[0032] A dielectric layer 112 (which may be an oxide layer) is formed on the first sidewall 120L and the second sidewall 120R of each first portion 120 of each TSV 110 and on the first sidewall 122L and the second sidewall 112R of each second portion 122 of each TSV 110. The dielectric layer 112 is formed above the second surface 108b of the first light-shielding material layer 108. The dielectric layer 112 may extend between adjacent TSVs 110. The dielectric layer 112 may not cover the first surface 102a of each TSV 110 closest to the substrate layer 102 or the end surface 110a located at the first surface 102a of the substrate layer 102. According to an embodiment, the dielectric layer 112 completely covers the second surface 108b and the sidewalls of each first portion 120 and each second portion 122 of each TSV 110.

[0033] A redistribution layer 114 including conductive and dielectric components is formed on each first sidewall 120L and second sidewall 120R of each first portion 120 of each TSV 110 and on each first sidewall 122L and second sidewall 112R of each second portion 122 of each TSV 110. In the first portion 120 of each TSV 110, a dielectric layer 112 is located between the redistribution layer 114 and the substrate layer 102. The dielectric layer 112 is also located between the redistribution layer 114 and the first light-shielding material layer 108. The redistribution layer 114 is also formed on each end surface 110a of each TSV 110. In some embodiments, the redistribution layer 114 completely covers the end surface 110a. The redistribution layer 114 formed on the dielectric layer 112 covering the first light-shielding material layer 108 only partially covers the dielectric layer 112. The redistribution layer 114 does not extend completely between adjacent TSVs 110. Instead, a plurality of gaps 130 are formed between adjacent TSVs 110, at which a portion of the dielectric layer 112 remains uncovered by the redistribution layer 114. Portions of the redistribution layer 114 on either side of the gap 130 form a plurality of contact regions 114c. The redistribution layer 114 does not extend to the sidewalls 110L and 110R of the electronic device 100. Instead, the redistribution layer 114 only extends midway between each TSV 110 and the sidewalls 100L and 100R of the electronic device 100.

[0034] The redistribution layer 114 can be metal and can be formed by processes such as lithography or plating.

[0035] Reference Figure 2D , a first cavity 136 is formed between two of the plurality of TSVs 110. The first cavity 136 extends through the entire dielectric layer 112, the entire first light-shielding material layer 108, the entire substrate layer 102, and the entire transparent layer 104 in a first direction. The first cavity 136 includes an end surface 136a, which can be coplanar with the first surface 104a of the transparent layer 104. According to an embodiment, the first cavity 136 can extend through a portion of the temporary bonding material 132 or through the entire temporary bonding material 132 in the first direction. According to an embodiment, the first cavity 136 can extend through a portion of the processing carrier 134 in the first direction.

[0036] The first cavity 136 separates the first die 138 from the second die 140. The second die 140 extends along a first direction from the redistribution layer 114 to the first surface 104a of the transparent layer 104. The second die 140 extends along a second direction from the first sidewall 136L of the first cavity 136 to the first sidewall 100L of the electronic device 100. The first sidewall 136L of the first cavity 136 includes the first central sidewall 104CL of the transparent layer 104, the first central sidewall 102CL of the substrate layer 102, the first central sidewall 108CL of the first light-shielding material layer 108, and the first central sidewall 112CL of the dielectric layer 112, all of which are coplanar. The first die extends along the first direction from the redistribution layer 114 to the first surface 104a of the transparent layer 104. The first die 138 extends along the second direction from the second sidewall 100R of the electronic device 100 to the second sidewall 136R of the first cavity 136. The second sidewall 136R of the first cavity 136 includes the second central sidewall 104CR of the transparent layer 104, the second central sidewall 102CR of the substrate layer 102, the second central sidewall 108CR of the first light-shielding material layer 108, and the second central sidewall 112CR of the dielectric layer 112, all of which are coplanar.

[0037] The first cavity 136 can be formed by sawing, laser, or other cutting processes.

[0038] Reference Figure 2E , an outer second light-shielding material layer 116 is formed. The second light-shielding material layer 116 fills the first cavity 136. According to one embodiment, the second light-shielding material layer 116 completely fills the first cavity 136. The second light-shielding material layer 116 covers the first and second central sidewalls 104CL and 104CR of the transparent layer 104, the first and second central sidewalls 102CL and 102CR of the substrate layer 102, the first and second central sidewalls 108CL and 108CR of the first light-shielding material layer 108, and the first and second central sidewalls 112CL and 112CR of the dielectric layer 112.

[0039] The second light-shielding material layer 116 includes a portion 116B formed on the side of the electronic device 100 opposite to the processing carrier 134. The portion 116B of the second light-shielding material layer 116 covers the second surface 102b of the substrate layer 102 and portions of the first light-shielding material layer 108, the dielectric layer 112, and the redistribution layer 114.

[0040] The second light-shielding material layer 116 can be formed by spraying.

[0041] The first portion 120 of each TSV 110 is at least partially filled with air or includes unfilled gaps. According to one embodiment, the second light-shielding material layer 116 at least partially fills the second portion 122 of each TSV 110.

[0042] A plurality of openings 142 are formed in the second light-shielding material layer 116 to expose the contact regions 114c of the redistribution layer 114.

[0043] Reference Figure 2F , a plurality of solder balls 124 are formed on the contact regions 114c of the redistribution layer 114. The plurality of solder balls 124 are conductive. According to one embodiment, the plurality of solder balls 124 completely fill the plurality of openings 142 in the second light-shielding material layer 116.

[0044] A second cavity 144 is formed in the second light-shielding material layer 116 in the first cavity 136. The second cavity 144 extends through the entire dielectric layer 112, the entire first light-shielding material layer 108, the entire substrate layer 102, and the entire transparent layer 104 in a first direction. After forming the second cavity 144, the first sidewall 136L and the second sidewall 136R of the first cavity 136 remain covered in the second light-shielding material layer 116, thereby forming a first portion 116L covering the second sidewall 136R of the first cavity 136 and a second portion 116L covering the first sidewall 136L of the first cavity 136. The thicknesses of the first portion 116L and the second portion 116R of the second light-shielding material layer 116 can be in the range of 20 to 40 microns. The second cavity 144 completely separates the first die 138 from the second die 140.

[0045] The second cavity 144 can be formed by sawing, laser, or other cutting processes.

[0046] Although Figure 2F only two dies, namely the first die 138 and the second die 140, are shown, embodiments can include more dies.

[0047] The temporary bonding material 132 and the handling carrier 134 are removed from the electronic device 100. According to one embodiment, the temporary bonding material 133 and the handling carrier 134 can be removed before or after forming the second cavity 144.

[0048] The present disclosure relates to a device that includes a substrate having a first surface opposite to a second surface. The substrate includes a plurality of sidewalls extending from the first surface to the second surface and a plurality of sensor elements in the first surface. A first through-silicon via extends from the second surface to the first surface. A transparent layer is located on the first surface of the substrate, and the transparent layer includes an exposed surface opposite to the first surface of the substrate and a plurality of sidewalls extending from the exposed surface to the first surface of the substrate. A first light-shielding material layer covers the second surface of the substrate, the plurality of sidewalls of the substrate, and the plurality of sidewalls of the transparent layer. The light-shielding material completely covers the plurality of sidewalls of the substrate and completely covers the plurality of sidewalls of the transparent layer.

[0049] The plurality of sidewalls of the substrate are coplanar with the plurality of sidewalls of the transparent layer. A second through-silicon via extends from the second surface to the first surface, and the plurality of sensor elements are located between the first through-silicon via and the second through-silicon via. The transparent layer is glass. A second light-shielding material layer is coupled between the first light-shielding material layer and the second surface of the substrate.

[0050] The dielectric layer completely covers the inner surface of the first through-silicon via, and the dielectric layer is located between the first light-shielding material layer and the second light-shielding material layer. The redistribution layer completely covers the inner surface of the first through-silicon via, and the redistribution layer is located between the dielectric layer and the first light-shielding material layer. The contact is located between the first surface of the substrate and the transparent layer and is coupled to the redistribution layer on the inner surface of the first through-silicon via.

[0051] The present disclosure includes forming a first light-shielding material layer covering the first surface of the substrate, forming a first opening that completely penetrates the substrate, and coupling to a transparent layer of the substrate. The method includes: forming a second light-shielding material layer in the first opening and on the first light-shielding material layer, and forming a second opening in the second light-shielding material layer located in the first opening. The method includes forming a plurality of through-silicon vias extending from the first surface of the substrate to the transparent layer. The method further includes forming a dielectric layer in the plurality of through-silicon vias and on the first light-shielding material layer.

[0052] The method includes forming a redistribution layer that is in the plurality of through-silicon vias and partially covers the first light-shielding material layer. The second light-shielding material layer completely fills the first opening. The method includes forming solder balls coupled to the redistribution layer. The method includes forming a plurality of gaps in the first light-shielding material layer, each of the plurality of gaps being directly above one of the plurality of through-silicon vias and wider than each of the plurality of through-silicon vias. The method includes filling each of the plurality of gaps in the first light-shielding material layer with the second light-shielding material layer.

[0053] The present disclosure includes an apparatus that includes: a substrate including a first surface opposite a second surface; and a transparent layer located on the first surface of the substrate. The transparent layer includes an exposed surface opposite the first surface of the substrate and a plurality of sidewalls extending from the exposed surface to the first surface of the substrate. The apparatus includes: a first light-shielding material layer covering the second surface of the substrate, the plurality of sidewalls of the substrate, and the plurality of sidewalls of the transparent layer; and a second light-shielding material layer located between the first light-shielding material layer and the second surface. A first through-silicon via extends in a first direction through the second light-shielding material layer to the first surface, the first through-silicon via including a first portion and a second portion, the first portion extending in the first direction from the second surface to the first surface and having a first width along a second direction transverse to the first direction, and the second portion extending in the first direction through the second light-shielding material layer to the second surface, the second portion having a second width along the second direction, the second width being greater than the first width of the first portion. The apparatus includes a first portion of the second light-shielding material layer extending into the second portion of the first through-silicon via. The apparatus includes an air gap located in the first through-silicon via between the first portion of the second light-shielding material layer and the first surface.

[0054] The various embodiments described above may be combined to provide additional embodiments. All U.S. patents, U.S. patent application publications, U.S. patent applications, foreign patents, foreign patent applications, and non-patent publications mentioned in this specification and / or listed in the application data sheet are hereby incorporated by reference in their entirety. Aspects of the embodiments may be modified if necessary to employ concepts of various patents, applications, and publications to provide additional embodiments.

[0055] These and other changes may be made to the embodiments in light of the above detailed description. In general, in the following claims, the terms used should not be construed as limiting the claims to the specific embodiments disclosed in the specification and the claims, but should be construed to include all possible embodiments and the full scope of equivalents to which such claims are entitled. Accordingly, the claims are not limited by the present disclosure.

Claims

1. An electronic device, characterized in that, Comprising: A substrate, including a first surface opposite to a second surface, the substrate comprising: A plurality of sidewalls extending from the first surface to the second surface; A plurality of sensor elements located in the first surface; A first through-silicon via extending from the second surface to the first surface; A transparent layer located on the first surface of the substrate, the transparent layer comprising: An exposed surface opposite to the first surface of the substrate; and A plurality of sidewalls extending from the exposed surface to the first surface of the substrate; A first light-shielding material layer covering the second surface of the substrate, the plurality of sidewalls of the substrate, and the plurality of sidewalls of the transparent layer.

2. The electronic device according to claim 1, wherein Wherein the first light-shielding material layer completely covers the plurality of sidewalls of the substrate and completely covers the plurality of sidewalls of the transparent layer.

3. The electronic device according to claim 1, characterized in that, Wherein the plurality of sidewalls of the substrate are coplanar with the plurality of sidewalls of the transparent layer.

4. The electronic device according to claim 1, wherein Including a second through-silicon via from the second surface to the first surface, and the plurality of sensor elements are located between the first through-silicon via and the second through-silicon via.

5. The electronic device according to claim 1, characterized in that, Including a second light-shielding material layer coupled between the first light-shielding material layer and the second surface of the substrate.

6. The electronic device according to claim 5, characterized in that, Including a dielectric layer completely covering the inner surface of the first through-silicon via, and the dielectric layer is located between the first light-shielding material layer and the second light-shielding material layer.

7. The electronic device according to claim 6, wherein Including a redistribution layer completely covering the inner surface of the first through-silicon via, and the redistribution layer is located between the dielectric layer and the first light-shielding material layer.

8. The electronic device according to claim 7, wherein Including a contact, the contact is between the first surface of the substrate and the transparent layer and is coupled to the redistribution layer on the inner surface of the first through-silicon via.

9. An electronic device, characterized in that, Comprising: A substrate, including a first surface opposite to a second surface; A transparent layer located on the first surface of the substrate, the transparent layer comprising: An exposed surface opposite to the first surface of the substrate; and A plurality of sidewalls extending from the exposed surface to the first surface of the substrate; A first light-shielding material layer covering the second surface of the substrate, the plurality of sidewalls of the substrate, and the plurality of sidewalls of the transparent layer; A second light-shielding material layer located between the first light-shielding material layer and the second surface; A first through-silicon via extending along a first direction through the second light-shielding material layer to the first surface, the first through-silicon via comprising: A first portion extending from the second surface to the first surface along the first direction and having a first width along a second direction transverse to the first direction; and A second portion extending along the first direction through the second light-shielding material layer to the second surface, the second portion having a second width along the second direction, and the second width is greater than the first width of the first portion.

10. The electronic device according to claim 9, characterized in that, Wherein a first portion of the second light-shielding material layer extends into the second portion of the first through-silicon via.

11. The electronic device according to claim 10, wherein, Comprising: An air gap, the air gap is located in the first through-silicon via and is between the first portion of the second light-shielding material layer and the first surface.

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