Air inlet pipe applied to photovoltaic cell LPCVD (low pressure chemical vapor deposition), tubular furnace and Laplacian machine table

Abstract

The utility model relates to the field of photovoltaic cells, and particularly discloses an air inlet pipe applied to photovoltaic cell LPCVD, a tube furnace and a Laplacian machine table, the air inlet pipe applied to photovoltaic cell LPCVD comprises a pipe body, one end of the pipe body is an open air outlet end, the other end of the pipe body is a closed air inlet end, and the other end of the pipe body is a closed air outlet end. A plurality of first air inlets close to the air inlet end are formed in the pipe wall of the pipe body. The tubular furnace comprises the gas inlet pipe applied to the photovoltaic cell LPCVD. The Laplacian machine table comprises the tubular furnace. Compared with the prior art, air inlet is changed into lateral air inlet, direct flow air inlet is replaced, the multiple first air inlets are arranged to achieve multidirectional air inlet, the direct contact area of airflow at the air inlets and a silicon wafer is reduced, the tubular furnace can be filled with gas more rapidly, the air flow in contact with all positions is more uniform, the thickness of a produced Poly-Si deposition film is more uniform, and the production efficiency is improved. And the production efficiency and yield of the battery piece are ensured.

Description

Technical Field

[0001] The utility model relates to the technical field of photovoltaic cells, and particularly relates to an air inlet pipe, a tube furnace and a Laplace machine for LPCVD of photovoltaic cells. Background Art

[0002] There are various solar cell preparation technologies, including Passivated Emitter and Rear Cell (PERC), Heterojunction with Intrinsic Thin-layer (HJT), Interdigitated Back Contact (IBC), and Tunnel Oxide Passivated Contact (TOPCon). In recent years, with the rapid increase in market share, TOPCon cells are expected to surpass PERC technology in the next decade and become the dominant technology.

[0003] In TOPCon cells, in the prior art, the tunnel oxide layer technology includes Physical Vapor Deposition (PVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), and Low Pressure Chemical Vapor Deposition (LPCVD). The Poly-Si prepared by the PVD path has no overplating and good uniformity, but it is expensive and has low efficiency. The Poly-Si prepared by the PECVD path has good uniformity, but there is a film bursting phenomenon. The LPCVD path has high efficiency, but the problem of uneven thickness of the deposited Poly-Si film needs to be solved. Summary of the Utility Model

[0004] The technical problem to be solved by the utility model is the uneven film thickness in the LPCVD path. The purpose is to provide an air inlet pipe, a tube furnace and a Laplace machine for LPCVD of photovoltaic cells to solve the above problems.

[0005] The utility model is realized by the following technical solutions:

[0006] In the first aspect, the utility model provides an air inlet pipe for LPCVD of photovoltaic cells, which includes a pipe body. One end of the pipe body is an open air outlet end, and the other end is a closed air inlet end. A plurality of first air inlet ports are arranged on the pipe wall near the air inlet end to form a multi-directional air inlet structure.

[0007] In a possible design, the first air inlet ports are located on the same circumference and there are four of them. The four first air inlet ports are evenly distributed on the pipe body along the circumferential direction of the pipe body. Correspondingly, the interval between the four first air inlet ports is 90°.

[0008] In a possible design, the four first air inlet ports are all inclined 45° relative to the vertical direction.

[0009] In a possible design, the first air inlet port is configured as a square hole with a length of 80 mm and a width of 15 mm.

[0010] In a possible design, the first air inlet is parallel to the axis direction of the pipe body, and one end of the first air inlet is adjacent to the air inlet end of the pipe body with a distance of 70 mm.

[0011] In a possible design, there are three circular and evenly distributed second air inlets on the air inlet end of the pipe body, and the included angle between two adjacent second air inlets is 120°.

[0012] In a possible design, the second air inlet is a round hole with a diameter of 20 mm, and the center of the round hole is located on the circumference at a distance of 12 mm from the outer diameter of the pipe body. Correspondingly, the three second air inlets are evenly distributed on this circumference.

[0013] In a possible design, the diameter of the pipe body is 90 mm and the inner diameter is 86 mm.

[0014] In a second aspect, the present invention provides a tube furnace, including the intake pipe applied to the LPCVD of photovoltaic cells.

[0015] In a third aspect, the present invention provides a Laplace machine platform, including the tube furnace.

[0016] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0017] 1. Changing the air intake to lateral air intake, replacing the direct current air intake, and setting multiple first air inlets to achieve multi-directional air intake. This not only reduces the direct contact area between the airflow at the air inlet and the silicon wafer, but also enables the tube furnace to be filled with gas more quickly, the air flow rate in each place is more uniform, and the thickness of the Poly-Si deposition film produced is also more uniform, ensuring the production efficiency and yield of the battery chips.

[0018] 2. After adding the second air inlet, the pipe body reduces the direct current air flow rate and increases the lateral air flow rate. This not only ensures the same source amount of gas and sufficient gas supply, but also enables the tube furnace to be filled with gas more quickly. Based on this, both the direct current gas source amount and the lateral air intake source amount are ensured, which helps to increase the uniformity of the Poly-Si deposition film thickness. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the following will briefly introduce the drawings required to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present invention, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings. In the drawings:

[0020] Figure 1 It is a schematic structural diagram of an intake pipe applied to the LPCVD of photovoltaic cells.

[0021] Figure 2 It is a layout schematic diagram of the first air inlet.

[0022] Figure 3 It is a layout schematic diagram of the second air inlet.

[0023] Labels in the attached drawings and corresponding names of parts: 1. Pipe body; 2. First air inlet; 3. Second air inlet. Specific embodiments

[0024] To make the objectives, technical solutions and advantages of the present utility model clearer and more understandable, the present utility model will be further described in detail below in combination with embodiments and the attached drawings. The illustrative embodiments and descriptions of the present utility model are only used to explain the present utility model and do not serve as a limitation to the present utility model.

[0025] In the following description, a large number of specific details are set forth in order to provide a thorough understanding of the present utility model. However, it is obvious to those of ordinary skill in the art that: It is not necessary to adopt these specific details to implement the present utility model. In other embodiments, well-known structures, circuits, materials or methods are not specifically described in order to avoid obscuring the present utility model.

[0026] Throughout the specification, references to "one embodiment", "an embodiment", "one example" or "an example" mean that a particular feature, structure, or characteristic described in connection with the embodiment or example is included in at least one embodiment of the present utility model. Thus, the phrases "one embodiment", "an embodiment", "one example" or "an example" appearing throughout the specification do not necessarily all refer to the same embodiment or example. Additionally, the particular features, structures, or characteristics may be combined in any suitable combination and / or sub-combination in one or more embodiments or examples. Further, those of ordinary skill in the art should understand that the diagrams provided herein are for illustrative purposes only and are not necessarily drawn to scale. The term "and / or" used herein includes any and all combinations of one or more of the associated listed items.

[0027] In the description of the present utility model, the orientation or positional relationship indicated by terms such as "front", "rear", "left", "right", "upper", "lower", "vertical", "horizontal", "high", "low", "inner", "outer", etc. is based on the orientation or positional relationship shown in the attached drawings, and is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the protection scope of the present utility model.

[0028] Embodiment:

[0029] For the LPVCD process, in the prior art, a Laplace machine is used to prepare the Poly-Si deposition film. Currently, there is a phenomenon that the film thickness of the wafers on the upper part of the last three boats of the Laplace machine is too thin, which affects the production efficiency of the entire film.

[0030] Regarding the above problems, after analysis, since the gas pipe selected for gas intake is a conventional pipe, that is, a cylindrical pipe with both ends open, and the gas inlet is a unidirectional gas inlet. During the production process, the wafers near the gas inlet are relatively close to the gas inlet, and due to the unidirectional gas inlet, the gas flow rate is large, and the film thickness of the Poly-Si deposition film produced at this location is too thick; the gas inlet pipe is inserted into the tube furnace, and the furnace tail of the tube furnace is far from the gas inlet of the gas inlet pipe and is not directly opposite the gas inlet, so the gas flow rate is small, and the film thickness of the Poly-Si deposition film produced at this location is too thin. Therefore, due to the different gas flow rates, the film thickness of the Poly-Si deposition film at different positions also varies.

[0031] Therefore, in this embodiment, an air inlet pipe applied to the LPCVD of photovoltaic cells is proposed here. Specifically:

[0032] As Figures 1-3 shown, an air inlet pipe applied to the LPCVD of photovoltaic cells includes a pipe body 1. One end of the pipe body 1 is an open air outlet end, and the other end of the pipe body 1 is a closed air inlet end. A plurality of first air inlets 2 are provided on the pipe wall of the pipe body 1 near the air inlet end to form a multi-directional air intake structure.

[0033] In the air inlet pipe applied to the LPCVD of photovoltaic cells, the direct gas intake is replaced by lateral gas intake, and multiple first air inlets 2 are provided to achieve multi-directional gas intake. This not only reduces the direct contact area between the gas flow at the gas inlet and the wafers, but also enables the tube furnace to be filled with gas more quickly, and the gas flow rates in contact with each part are more uniform, and the film thickness of the produced Poly-Si deposition film is also more uniform, ensuring the production efficiency and yield of the wafers.

[0034] Furthermore, since the gas source quantity of the direct current is reduced, the gas flow rate acting on the wafers at the air inlet end of the pipe body 1 is reduced. Compared with the prior art, the film thickness of the Poly-Si deposition film produced at this location will be reduced; the gas source quantity of the lateral gas intake is increased, the tube furnace is filled with gas more quickly, and the gas flow rate at the furnace tail of the tube furnace increases, and the film thickness of the Poly-Si deposition film produced at this location will increase. The two are averaged with each other, so that the film thickness of the produced Poly-Si deposition film is more uniform.

[0035] In a possible implementation manner, the first air inlets 2 are located on the same circumference and there are four of them. The four first air inlets 2 are evenly distributed on the pipe body 1 along the circumferential direction of the pipe body 1. Correspondingly, the interval between the four first air inlets 2 is 90°.

[0036] In a possible implementation, the four first air inlets 2 are all inclined at 45° relative to the vertical direction.

[0037] In a possible implementation, the first air inlet 2 is configured as a rectangular hole with a length of 80 mm and a width of 15 mm.

[0038] In a possible implementation, the first air inlet 2 is parallel to the axis direction of the pipe body 1, and one end of the first air inlet 2 is adjacent to the air inlet end of the pipe body 1 with a spacing of 70 mm.

[0039] In a possible implementation, three circular and evenly distributed second air inlets 3 are provided on the air inlet end of the pipe body 1, and the included angle between two adjacent second air inlets 3 is 120°.

[0040] In a possible implementation, the second air inlet 3 is a circular hole with a diameter of 20 mm, and the center of the circular hole is located on a circumference 12 mm away from the outer diameter of the pipe body 1. Correspondingly, the three second air inlets 3 are evenly distributed on this circumference.

[0041] In a possible implementation, the diameter of the pipe body 1 is 90 mm and the inner diameter is 86 mm.

[0042] Based on the above design scheme, the diameter of the pipe body 1 is 90 mm and the inner diameter is 86 mm. Calculated according to the unidirectional air intake in the prior art, its air intake cross-sectional area is 5809 mm 2 . After changing to multi-directional air intake and adding the second air inlets 3, the air intake cross-sectional area of the first air inlets 2 on the side is 4800 mm 2 , and the air intake cross-sectional area of the second air inlets 3 at the bottom is 942 mm 2 . The sum of the two is not much different from the unidirectional air intake cross-sectional area. After improvement, the pipe body 1 reduces the direct current air flow rate and increases the side air flow rate. It not only ensures the same source amount of gas and sufficient gas supply, but also makes the tube furnace fill with gas more quickly. Based on this, both the direct current gas source amount and the side air intake source amount are ensured, which helps to increase the uniformity of the Poly-Si deposition film thickness.

[0043] At the same time, since even the slightest change in the air flow in the tube furnace will cause an overall change in the furnace tube, the parameter characteristics of the first air inlets 2 and the second air inlets 3 shall not be changed randomly to ensure the increase in the uniformity of the Poly-Si deposition film thickness.

[0044] Based on the intake pipe applied to the LPCVD of photovoltaic cells in this embodiment, a tube furnace is introduced. The tube furnace includes the intake pipe applied to the LPCVD of photovoltaic cells. Based on this, according to actual production needs, several intake pipes applied to the LPCVD of photovoltaic cells are provided on the tube furnace. By the mutual cooperation of multiple intake pipes applied to the LPCVD of photovoltaic cells, the intake air volume, inflation speed and gas supply stability are increased, the normal operation of the tube furnace is ensured, and it helps to increase the uniformity of the Poly-Si deposition film thickness.

[0045] In addition, this embodiment also introduces a Laplace machine platform, and the Laplace machine platform includes the above-mentioned tube furnace. Based on this, the tube furnace can be used for any suitable model of the Laplace machine platform, with a wide range of uses and good practicability.

[0046] The specific embodiments described above further elaborate on the purpose, technical solutions and beneficial effects of the present invention. It should be understood that the above description is only the specific embodiments of the present invention and is not used to limit the protection scope of the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. An intake pipe applied to the LPCVD of photovoltaic cells, characterized in that, It includes a tube body (1). One end of the tube body (1) is an open air outlet end, and the other end of the tube body (1) is a closed air inlet end. A plurality of first air inlets (2) are provided on the tube wall of the tube body (1) near the air inlet end to form a multi-directional air inlet structure.

2. The intake pipe applied to the photovoltaic cell LPCVD according to claim 1, characterized in that, The first air inlets (2) are located on the same circumference and there are four of them. The four first air inlets (2) are evenly distributed on the tube body (1) along the circumferential direction of the tube body (1). Correspondingly, the interval between the four first air inlets (2) is 90°.

3. The intake pipe applied to the LPCVD of photovoltaic cells according to claim 2, characterized in that, The four first air inlets (2) are all inclined 45° relative to the vertical direction.

4. The intake pipe applied to the LPCVD of a photovoltaic cell according to claim 3, characterized in that, The first air inlet (2) is configured as a rectangular hole with a length of 80 mm and a width of 15 mm.

5. The intake pipe applied to the LPCVD of a photovoltaic cell according to claim 4, characterized in that, The first air inlet (2) is parallel to the axis direction of the tube body (1). One end of the first air inlet (2) is adjacent to the air inlet end of the tube body (1) and the distance is 70 mm.

6. The intake pipe applied to the photovoltaic cell LPCVD according to any one of claims 1-5, characterized in that, Three circular and evenly distributed second air inlets (3) are provided on the air inlet end of the tube body (1). The included angle between two adjacent second air inlets (3) is 120°.

7. The intake pipe applied to the LPCVD of a photovoltaic cell according to claim 6, characterized in that, The second air inlet (3) is a circular hole with a diameter of 20 mm. The center of the circular hole is located on the circumference at a distance of 12 mm from the outer diameter of the tube body (1). Correspondingly, the three second air inlets (3) are evenly distributed on this circumference.

8. The intake pipe applied to the LPCVD of a photovoltaic cell according to claim 7, characterized in that, The diameter of the tube body (1) is 90 mm and the inner diameter is 86 mm.

9. A tubular furnace, characterized in that, It includes the intake pipe applied to the LPCVD of photovoltaic cells described in any one of claims 1-8.

10. A Laplace machine, characterized in that, It includes the tube furnace described in claim 9.

Images