Rectifier diode device

Abstract

The utility model discloses a rectifier diode device, which comprises a horizontally arranged diode chip, an upper electrode, a lower electrode and an epoxy packaging body coated on the outer side of the diode chip, an upper thinning area is formed below an upper connecting part of the upper electrode, a lower thinning area is formed above a lower connecting part of the lower electrode, and the upper thinning area and the lower thinning area are arranged in parallel. The diode chip is located in the upper thinning area and the lower thinning area, and a groove parallel to the edge of the diode chip is formed in the lower surface of the upper connecting part and / or the upper surface of the lower connecting part and located on the outer side of the diode chip. The diode chip is connected with the upper connecting part and the lower connecting part in a welding mode through a welding layer located on the inner side of the groove. According to the utility model, the heat dissipation efficiency and uniformity can be improved, the internal stress of the packaging body can be reduced, and the binding force between the edge of the chip and epoxy can be improved, so that the service life of a device is prolonged, and the electrical performance of the device is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor power devices, and particularly relates to a rectifier diode device. Background Art

[0002] A diode device is an electronic device with unidirectional current conduction. Inside a semiconductor diode, there is a PN junction and two lead terminals. This electronic device has the property of unidirectional current transduction according to the direction of the applied voltage and is widely used in electronic products, communications, etc. Currently, the packaging volume of many diode devices is relatively large, resulting in the chip being widely covered, leading to poor heat dissipation efficiency and uniformity, and poor stability of the device performance during long-term use. Summary of the Utility Model

[0003] The purpose of the utility model is to provide a rectifier diode device, which can not only improve the heat dissipation efficiency and uniformity, but also reduce the stress inside the package, and can also improve the bonding force between the edge of the chip and the epoxy, thereby enhancing the service life and electrical performance of the device.

[0004] To achieve the above purpose, the technical solution adopted by the utility model is: a rectifier diode device, including: a horizontally arranged diode chip, an upper electrode, a lower electrode, and an epoxy package covering the outside of the diode chip. One end of the horizontally extending upper electrode is an upper connection part electrically connected to the upper surface of the diode chip, and the other end is a first lead part extending to the outside of the epoxy package. One end of the horizontally extending lower electrode is a lower connection part electrically connected to the lower surface of the diode chip, and the other end is a second lead part extending to the outside of the epoxy package;

[0005] An upper thinning area is formed below the upper connection part of the upper electrode, and a lower thinning area is formed above the lower connection part of the lower electrode. The diode chip is located in the upper thinning area and the lower thinning area. A groove parallel to the edge of the diode chip is arranged on the lower surface of the upper connection part and / or the upper surface of the lower connection part and on the outside of the diode chip. The diode chip is welded to the upper connection part and the lower connection part respectively through a welding layer located inside the groove.

[0006] The further improved solutions in the above technical solutions are as follows:

[0007] 1. In the above solution, the grooves are arranged on the lower surface of the upper connection part and the upper surface of the lower connection part and on the outside around the diode chip.

[0008] 2. In the above solution, the groove is an annular groove arranged around the edge of the diode chip.

[0009] 3. In the above solution, the lower surface of the first pin portion whose upper surface is flush with the upper connection portion is lower than the lower surface of the diode chip, and the upper surface of the second pin portion whose lower surface is flush with the lower connection portion is higher than the upper surface of the diode chip.

[0010] 4. In the above solution, the first pin portion of the upper electrode and the second pin portion of the lower electrode are both cylindrical and coaxially arranged.

[0011] Due to the application of the above technical solution, the present utility model has the following advantages and effects compared with the prior art:

[0012] In the rectifier diode device of the present utility model, an upper thinning region is formed below the upper connection portion of the upper electrode, and a lower thinning region is formed above the lower connection portion of the lower electrode. The diode chip is located in the upper thinning region and the lower thinning region. A groove parallel to the edge of the diode chip is provided on the lower surface of the upper connection portion and / or the upper surface of the lower connection portion and located outside the diode chip. The diode chip is respectively welded to the upper connection portion and the lower connection portion through a welding layer located inside the groove. This can not only reduce the thickness of the epoxy package, increase the heat dissipation area of the chip, and reduce the distance between the chip and the external environment, thereby improving the efficiency and uniformity of heat dissipation, but also reduce the stress inside the package, improve the position accuracy and structural stability of chip welding, and improve the bonding force between the edge of the chip and the epoxy, thereby enhancing the service life and electrical performance of the device. Description of the Drawings

[0013] Attached Figure 1 is a schematic structural diagram of the rectifier diode device of the present utility model;

[0014] Attached Figure 2 is a partial enlarged view of the rectifier diode device of the present utility model.

[0015] In the above drawings: 1. Diode chip; 2. Upper electrode; 21. Upper connection portion; 22. Upper thinning region; 23. First pin portion; 3. Lower electrode; 31. Lower connection portion; 32. Lower thinning region; 33. Second pin portion; 4. Epoxy package; 5. Welding layer; 6. Groove. Detailed Embodiment

[0016] The present utility model will be further described below in conjunction with the drawings and embodiments:

[0017] Embodiment 1: A rectifier diode device, comprising: a horizontally disposed diode chip 1, an upper electrode 2, a lower electrode 3, and an epoxy encapsulation body 4 covering the outside of the diode chip 1. One end of the horizontally extending upper electrode 2 is an upper connection portion 21 electrically connected to the upper surface of the diode chip 1, and the other end is a first lead portion 23 extending to the outside of the epoxy encapsulation body 4. One end of the horizontally extending lower electrode 3 is a lower connection portion 31 electrically connected to the lower surface of the diode chip 1, and the other end is a second lead portion 33 extending to the outside of the epoxy encapsulation body 4;

[0018] An upper thinning region 22 is formed below the upper connection portion 21 of the upper electrode 2, and a lower thinning region 32 is formed above the lower connection portion 31 of the lower electrode 3. The diode chip 1 is located within the upper thinning region 22 and the lower thinning region 32. A groove 6 parallel to the edge of the diode chip 1 is provided on the lower surface of the upper connection portion 21 and / or the upper surface of the lower connection portion 31 and outside the diode chip 1. The diode chip 1 is respectively welded to the upper connection portion 21 and the lower connection portion 31 through a solder layer 5 located inside the groove 6.

[0019] The above-mentioned groove 6 is provided on the lower surface of the upper connection portion 21 and the upper surface of the lower connection portion 31 and outside the periphery of the diode chip 1; the above-mentioned groove 6 is an annular groove provided around the edge of the diode chip 1.

[0020] Embodiment 2: A rectifier diode device, comprising: a horizontally disposed diode chip 1, an upper electrode 2, a lower electrode 3, and an epoxy encapsulation body 4 covering the outside of the diode chip 1. One end of the horizontally extending upper electrode 2 is an upper connection portion 21 electrically connected to the upper surface of the diode chip 1, and the other end is a first lead portion 23 extending to the outside of the epoxy encapsulation body 4. One end of the horizontally extending lower electrode 3 is a lower connection portion 31 electrically connected to the lower surface of the diode chip 1, and the other end is a second lead portion 33 extending to the outside of the epoxy encapsulation body 4;

[0021] An upper thinning region 22 is formed below the upper connection portion 21 of the upper electrode 2, and a lower thinning region 32 is formed above the lower connection portion 31 of the lower electrode 3. The diode chip 1 is located within the upper thinning region 22 and the lower thinning region 32. A groove 6 parallel to the edge of the diode chip 1 is provided on the lower surface of the upper connection portion 21 and / or the upper surface of the lower connection portion 31 and outside the diode chip 1. The diode chip 1 is respectively welded to the upper connection portion 21 and the lower connection portion 31 through a solder layer 5 located inside the groove 6.

[0022] The lower surface of the first pin portion 23 whose upper surface is flush with the upper connection portion 21 is lower than the lower surface of the diode chip 1, and the upper surface of the second pin portion 33 whose lower surface is flush with the lower connection portion 31 is higher than the upper surface of the diode chip 1;

[0023] The first pin portion 23 of the upper electrode 2 and the second pin portion 33 of the lower electrode 3 are both cylindrical and coaxially arranged; the welding layer 5 is a solder paste layer.

[0024] When adopting the above rectifier diode device, it can not only reduce the thickness of the epoxy package, increase the heat dissipation area of the chip and reduce the distance between the chip and the external environment so as to improve the heat dissipation efficiency and uniformity, but also reduce the stress inside the package, and can also improve the position accuracy and structural stability of chip soldering, and improve the bonding force between the edge of the chip and the epoxy, thereby enhancing the service life and electrical performance of the device.

[0025] The above embodiments are only for illustrating the technical concept and characteristics of the present invention, and the purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly, and it cannot be used to limit the protection scope of the present invention. Any equivalent changes or modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.

Claims

1. A rectifier diode device, comprising: A horizontally arranged diode chip (1), an upper electrode (2), a lower electrode (3), and an epoxy encapsulation body (4) covering the outside of the diode chip (1), characterized in that: one end of the horizontally extending upper electrode (2) is an upper connection part (21) electrically connected to the upper surface of the diode chip (1), and the other end is a first pin part (23) extending to the outside of the epoxy encapsulation body (4); one end of the horizontally extending lower electrode (3) is a lower connection part (31) electrically connected to the lower surface of the diode chip (1), and the other end is a second pin part (33) extending to the outside of the epoxy encapsulation body (4). An upper thinning area (22) is formed below the upper connection part (21) of the upper electrode (2), and a lower thinning area (32) is formed above the lower connection part (31) of the lower electrode (3). The diode chip (1) is located in the upper thinning area (22) and the lower thinning area (32). A groove (6) parallel to the edge of the diode chip (1) is provided on the lower surface of the upper connection part (21) and / or the upper surface of the lower connection part (31) and on the outside of the diode chip (1). The diode chip (1) is welded to the upper connection part (21) and the lower connection part (31) respectively through a welding layer (5) located inside the groove (6).

2. The rectifier diode device according to claim 1, characterized in that: The grooves (6) are provided on the lower surface of the upper connection part (21) and the upper surface of the lower connection part (31) and on the outside around the diode chip (1).

3. The rectifier diode device according to claim 1, characterized in that: The groove (6) is an annular groove provided around the edge of the diode chip (1).

4. The rectifier diode device according to claim 1, wherein: The lower surface of the first pin part (23) whose upper surface is flush with the upper connection part (21) is lower than the lower surface of the diode chip (1), and the upper surface of the second pin part (33) whose lower surface is flush with the lower connection part (31) is higher than the upper surface of the diode chip (1).

5. The rectifying diode device according to claim 4, characterized in that: The first pin part (23) of the upper electrode (2) and the second pin part (33) of the lower electrode (3) are both cylindrical and coaxially arranged.

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