Ultrathin solar photovoltaic N-type large-size monocrystalline silicon wafer
By setting a combined structure of a conductive transparent film layer, a transparent adhesive film layer and a transparent reinforced fiber web on the N-type single crystal silicon wafer substrate, the fragility problem of ultra-thin single crystal silicon wafer is solved, the structural strength and assembly convenience of large-size single crystal silicon wafers are improved, and the cost is reduced.
Patent Information
- Application Number
- CN202422280873.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-19
- Publication Date
- 2025-08-08
- Estimated Expiration
- 2034-09-19
AI Technical Summary
The existing N-type single crystal silicon wafers have fragile structures when their thickness is less than 110 microns, making it difficult to use large-size single crystal silicon wafers in solar photovoltaic panels, resulting in problems such as low yield, long assembly time and high cost.
The combined structure of conductive transparent film layer, transparent adhesive film layer, transparent reinforced fiber mesh and tin-plated protective layer is adopted. The single crystal silicon wafer matrix is strengthened through the conductive transparent film layer, and the transparent adhesive film layer fixes the fiber mesh, controlling the overall thickness to improve structural strength.
The structural stability and assembly convenience of large-size ultra-thin single crystal silicon wafers are achieved, reducing costs and improving the reliability of solar photovoltaic panels.
Smart Images
Figure CN223207467U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of single crystal silicon wafers, in particular to an ultra-thin N-type large-size single crystal silicon wafer for solar photovoltaic use. Background Art
[0002] Monocrystalline silicon wafers are a key component of solar photovoltaic panels, and their cost accounts for a significant portion of the overall production cost of solar photovoltaic panels. Therefore, thinning monocrystalline silicon wafers is beneficial for reducing the production cost of solar photovoltaic panels.
[0003] In fact, the thickness of N-type monocrystalline silicon wafers can be reduced to less than 110 microns. However, the structure of N-type monocrystalline silicon wafers with a thickness of less than 110 microns is also relatively fragile, which is not conducive to the use of large-sized N-type monocrystalline silicon wafers for processing and assembly in the production of solar photovoltaic panels. Because they are prone to breakage during the assembly process, the yield rate is reduced. The use of small-sized N-type monocrystalline silicon wafers increases the time and cost of assembly, which needs to be improved. Utility Model Content
[0004] The purpose of the utility model is to provide an ultra-thin N-type large-size single crystal silicon wafer for solar photovoltaic use, thereby improving the structural strength and controlling the thickness of the overall structure.
[0005] To achieve this purpose, the present invention adopts the following technical solutions:
[0006] An ultra-thin N-type large-size monocrystalline silicon wafer for solar photovoltaics, comprising: an N-type monocrystalline silicon wafer substrate, a conductive transparent film layer, a transparent adhesive film layer, a transparent reinforcing fiber mesh, a copper grid line, and a tinned protective layer. The conductive transparent film layer is arranged on the top surface of the N-type monocrystalline silicon wafer substrate, the copper grid line is arranged on the conductive transparent film layer, the tinned protective layer is arranged on the copper grid line, the transparent reinforcing fiber mesh is arranged on the conductive transparent film layer in an area other than the copper grid line, and the transparent adhesive film layer is arranged on the transparent reinforcing fiber mesh.
[0007] Wherein, the top surface of the transparent adhesive film layer is not higher than the top surface of the tin-plated protective layer.
[0008] Wherein, the transparent adhesive film layer is a layer of transparent UV adhesive or transparent conductive adhesive.
[0009] Wherein, the conductive transparent film layer is an ITO thin film.
[0010] The copper grid lines include vertically intersecting fine grid lines and main grid lines.
[0011] Wherein, the transparent reinforcing fiber mesh is a transparent glass fiber mesh.
[0012] The beneficial effects of the present invention are as follows: an ultra-thin N-type large-size monocrystalline silicon wafer for solar photovoltaics is provided, wherein the top surface structure of the N-type monocrystalline silicon wafer substrate is reinforced by a conductive transparent film layer, and a transparent adhesive film layer is used to fix the transparent reinforcing fiber mesh on the conductive transparent film layer, thereby further improving the overall structural strength. Moreover, the top surface of the transparent adhesive film layer is not higher than the top surface of the tin-plated protective layer, thereby controlling the overall thickness, being conducive to the use of a large-size ultra-thin N-type monocrystalline silicon wafer substrate with a thickness of less than 110 microns, reducing the cost of the N-type monocrystalline silicon wafer substrate, and improving the assembly convenience and use stability of the solar photovoltaic panel. BRIEF DESCRIPTION OF THE DRAWINGS
[0013] Figure 1 It is a structural diagram of the present utility model. DETAILED DESCRIPTION
[0014] The following combination Figure 1 The technical solution of the present utility model is further illustrated by specific embodiments.
[0015] like Figure 1 The ultra-thin N-type large-size single-crystal silicon wafer for solar photovoltaics shown in the figure includes: an N-type single-crystal silicon wafer substrate 1, a conductive transparent film layer 2, a transparent adhesive film layer 4, a transparent reinforcing fiber mesh 3, a copper grid line 5 and a tin-plated protective layer 6. The conductive transparent film layer 2 is arranged on the top surface of the N-type single-crystal silicon wafer substrate 1, and the conductive transparent film layer 2 is used to strengthen the top surface structure of the N-type single-crystal silicon wafer substrate 1.
[0016] In this embodiment, the conductive transparent film layer 2 is an ITO thin film, which is fixed on the top surface of the N-type single crystal silicon wafer substrate 1 by deposition. The structure is stable, and the ITO thin film has high conductivity, high visible light transmittance, high mechanical hardness, and high chemical stability, thereby enhancing the protection of the top surface of the N-type single crystal silicon wafer substrate 1.
[0017] The copper grid lines 5 are arranged on the conductive transparent film layer 2. In this embodiment, the copper grid lines 5 include vertically crossed fine grid lines and main grid lines to form a gridded copper grid line 5, thereby ensuring the conductive effect and avoiding the breakage of some fine grid lines or main grid lines, which may cause the product to be scrapped.
[0018] The tinned protective layer 6 is disposed on the copper grid line 5 to protect the copper grid line 5 , thereby preventing the copper grid line 5 from being oxidized at high temperature and improving the stability of the copper grid line 5 on the conductive transparent film layer 2 .
[0019] like Figure 1As shown, the transparent reinforcing fiber mesh 3 is disposed on the conductive transparent film layer 2 in areas other than the copper grid lines 5, enhancing structural stability while avoiding an increase in overall thickness. In this embodiment, the transparent reinforcing fiber mesh 3 is a transparent glass fiber mesh, which has high visible light transmittance and, after forming a mesh, enhances the bending and crack resistance of the N-type single-crystal silicon wafer substrate 1.
[0020] The transparent adhesive film layer 4 is placed on the transparent reinforcing fiber mesh 3 to fix the transparent reinforcing fiber mesh 3 on the conductive transparent film layer 2, thereby preventing the problem of falling off. In this embodiment, the transparent adhesive film layer 4 is made of a layer of transparent UV adhesive or transparent conductive adhesive. Transparent UV adhesive and transparent conductive adhesive are easy to apply and have a stable structure.
[0021] In this embodiment, if Figure 1 As shown, the top surface of the transparent adhesive film layer 4 is not higher than the top surface of the tin-plated protective layer 6. Overall, the thickest part is where the tin-plated protective layer 6 is located. Therefore, the design of the transparent adhesive film layer 4 not only improves the structural strength, but also controls the overall thickness, which is conducive to the use of a large-sized ultra-thin N-type single-crystal silicon wafer substrate with a thickness of less than 110 microns, thereby reducing the cost of the N-type single-crystal silicon wafer substrate. The large-sized ultra-thin N-type single-crystal silicon wafer substrate can improve the assembly convenience of the solar photovoltaic panel, and has high structural stability, and the manufactured solar photovoltaic panel is more reliable to use.
[0022] The above contents are only preferred embodiments of the present invention. For ordinary technicians in this field, according to the concept of the present invention, there may be changes in the specific implementation methods and application scope. The content of this specification should not be understood as limiting the present invention.
Claims
1. An ultra-thin N-type large-size single-crystal silicon wafer for solar photovoltaics, characterized in that: include: An N-type single crystal silicon wafer substrate, a conductive transparent film layer, a transparent adhesive film layer, a transparent reinforcing fiber mesh, a copper grid line and a tinned protective layer, wherein the conductive transparent film layer is arranged on the top surface of the N-type single crystal silicon wafer substrate, the copper grid line is arranged on the conductive transparent film layer, the tinned protective layer is arranged on the copper grid line, the transparent reinforcing fiber mesh is arranged on the area on the conductive transparent film layer except the copper grid line, and the transparent adhesive film layer is arranged on the transparent reinforcing fiber mesh.
2. The ultra-thin N-type large-size single crystal silicon wafer for solar photovoltaic use according to claim 1, characterized in that: The top surface of the transparent adhesive film layer is no higher than the top surface of the tin-plated protective layer.
3. The ultra-thin N-type large-size single crystal silicon wafer for solar photovoltaic use according to claim 1, characterized in that: The transparent adhesive film layer is a layer of transparent UV adhesive or transparent conductive adhesive.
4. The ultra-thin N-type large-size single crystal silicon wafer for solar photovoltaic use according to claim 1, characterized in that: The conductive transparent film layer is an ITO film.
5. The ultra-thin N-type large-size single crystal silicon wafer for solar photovoltaic use according to claim 1, characterized in that: The copper grid lines include fine grid lines and main grid lines that cross each other vertically.
6. The ultra-thin N-type large-size single crystal silicon wafer for solar photovoltaic use according to claim 1, characterized in that: The transparent reinforcing fiber mesh is a transparent glass fiber mesh.