LED chip and light emitting diode

Abstract

The utility model provides an LED chip and a light emitting diode. The LED chip comprises an N-type semiconductor layer, an active region and a P-type semiconductor layer which are sequentially stacked, the active region comprises multiple groups of blue-green light mixing layers, the multiple groups of blue-green light mixing layers are sequentially stacked, and each group of blue-green light mixing layers comprises a blue light quantum well layer and a green light quantum well layer which are sequentially and adjacently arranged; the light-emitting wavelength of each blue light quantum well layer in the multiple groups of blue-green light mixing layers is gradually changed, and the light-emitting wavelength of each green light quantum well layer in the multiple groups of blue-green light mixing layers is gradually changed. The beneficial effect of the utility model is that a stable color and light mixing effect can be provided.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor optoelectronic chips, and in particular to an LED chip and a light emitting diode. Background Art

[0002] Currently, in traditional RGB LED white light architectures, multiple light-emitting points need to be arranged on the same plane of the LEDs. For example, green, blue, and red LED chips are placed at these points. The three colors of light together create a mixed color and light effect. Green and blue LED chips are typically formed by growing gallium nitride (GaN) on a sapphire substrate. Red LED chips are typically formed by growing gallium arsenide phosphide (GaAsP) on a gallium arsenide (GaAs) substrate.

[0003] However, when a single-color LED is lit for a long time, it can experience thermal effects. When this single-color LED is combined with other color LEDs to create mixed light, this thermal effect can cause wavelength shifts. This makes mixed light difficult and results in poor color and light mixing. Utility Model Content

[0004] The utility model provides an LED chip and a light emitting diode to solve the problems of wavelength shift in existing monochromatic LEDs, such as high difficulty in forming mixed light and poor color and light mixing effects.

[0005] The embodiment of the present utility model is achieved as follows:

[0006] An LED chip includes an N-type semiconductor layer, an active region, and a P-type semiconductor layer stacked in sequence, wherein the active region includes multiple groups of blue-green mixed light layers, the multiple groups of blue-green mixed light layers are stacked in sequence, and each group of the blue-green mixed light layers includes a blue light quantum well layer and a green light quantum well layer arranged adjacent to each other in sequence; the emission wavelength of each blue light quantum well layer in the multiple groups of the blue-green mixed light layers is gradually changed, and the emission wavelength of each green light quantum well layer in the multiple groups of the blue-green mixed light layers is gradually changed.

[0007] The LED chip of the present application has multiple sets of blue-green mixed layers in the active region. The emission wavelengths of the blue quantum well layers within the multiple sets of blue-green mixed layers are gradually shifted, and the emission wavelengths of the green quantum well layers within the multiple sets of blue-green mixed layers are gradually shifted. This allows the LED chip to emit a uniform blue-green mixed light, improving its application. It also avoids the problem of wavelength shift in blue light-emitting diodes and green light-emitting diodes in the prior art, which results in poor luminous effects.

[0008] In a possible embodiment, the blue light quantum well layer and the green light quantum well layer both include In x Ga 1-x N, where x represents the molar fraction of In, and 1-x represents the molar fraction of Ga. In the blue light quantum well layer, when x is in the range of 0.06-0.22, the blue light quantum well layer emits blue light, and the blue light emission wavelength is between 380nm and 500nm.

[0009] In a possible implementation, in the green quantum well, when x is in the range of 0.22-0.28, the green quantum well layer emits green light, and the wavelength of the green light is between 500 nm and 560 nm.

[0010] In a possible embodiment, from the direction of the N-type semiconductor layer approaching the P-type semiconductor layer, the value of x of each blue light quantum well layer in the multiple groups of blue-green mixed light layers and the value of x of each green light quantum well layer in the multiple groups of blue-green mixed light layers gradually decrease.

[0011] In a possible embodiment, from the direction of the N-type semiconductor layer approaching the P-type semiconductor layer, the value of x of each blue light quantum well layer in the group of blue-green mixed light layers and the value of x of each green light quantum well layer in multiple groups of blue-green mixed light layers gradually increase.

[0012] In a possible implementation manner, the number of the blue-green light mixing layers is at least three.

[0013] In a possible embodiment, the P-type semiconductor layer includes a P-type contact layer, a P-type gallium nitride layer, and a P-type cladding layer stacked in sequence, the P-type cladding layer and the active area are adjacent to each other, and the P-type cladding layer and the active area are electrically connected.

[0014] In a possible implementation, the N-type semiconductor layer includes a stacked N-type gallium nitride layer and an N-type cladding layer, the N-type cladding layer and the active region are adjacent to each other, and the N-type cladding layer and the active region are electrically connected.

[0015] In a possible implementation, a substrate and a buffer layer are further provided on a side of the N-type semiconductor layer away from the P-type semiconductor layer. The buffer layer and the substrate are adjacently provided, and the buffer layer is located between the substrate and the N-type semiconductor layer.

[0016] An embodiment of the present application further provides a light emitting diode, comprising a bracket and the LED chip as described above, wherein the LED chip is fixedly connected to the bracket.

[0017] The LED chip of the present application is provided with multiple groups of blue-green mixed light layers in the active area, and the multiple groups of blue-green mixed light layers are stacked in sequence. Each group of blue-green mixed light layers includes a blue light quantum well layer and a green light quantum well layer. By adjusting the different values of x of each blue light quantum well layer in the multiple groups of blue-green mixed light layers, the blue light emission wavelengths of each blue light quantum well layer are made different from each other. And by adjusting the different values of x of each green light quantum well layer in the multiple groups of blue-green mixed light layers, the green light emission wavelengths of each green light quantum well layer are made different from each other. After the multiple blue lights with different emission wavelengths and the multiple green lights with different emission wavelengths are mixed, a uniform blue-green mixed light effect is formed. At the same time, the heat dissipation effect of the LED chip when emitting light is also improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 FIG. 1 is a structural diagram of a light emitting diode according to an embodiment of the present invention.

[0020] Figure 2 This is a structural diagram of an LED chip according to an embodiment of the present invention.

[0021] Figure 3 This is another structural schematic diagram of an LED chip according to an embodiment of the present invention.

[0022] Figure 4 This is another structural diagram of an LED chip according to an embodiment of the present invention.

[0023] Description of main component symbols:

[0024] LED chips 100, 110, 120

[0025] substrate 10

[0026] Buffer layer 20

[0027] N-type semiconductor layer 30

[0028] N-type gallium nitride layer 31

[0029] N-type cladding layer 32

[0030] Active area 40

[0031] Blue-green mixed light layer 41

[0032] First blue-green mixed light layer 411

[0033] Second blue-green mixed light layer 412

[0034] The third blue-green mixed light layer 413

[0035] Blue light quantum well layer 42

[0036] The first blue light quantum well layer 421

[0037] The second blue light quantum well layer 422

[0038] The third blue light quantum well layer 423

[0039] Green light quantum well layer 43

[0040] The first green light quantum well layer 431

[0041] The second green light quantum well layer 432

[0042] The third green light quantum well layer 433

[0043] P-type semiconductor layer 50

[0044] P-type cladding layer 51

[0045] P-type gallium nitride layer 52

[0046] P-type contact layer 53

[0047] LED 200

[0048] Bracket 210 DETAILED DESCRIPTION

[0049] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0050] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may also be an element centered therein. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may also be an element centered therein. When an element is considered to be "set on" another element, it may be directly set on the other element or there may also be an element centered therein. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0051] Unless otherwise defined, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art to which this invention pertains. The terms used herein in the specification of this invention are intended only to describe specific embodiments and are not intended to limit the invention. The term "or / and" as used herein includes any and all combinations of one or more of the associated listed items.

[0052] Some embodiments of the present invention are described in detail. In the absence of conflict, the following embodiments and features of the embodiments can be combined with each other.

[0053] Example

[0054] See also Figure 1 This embodiment provides a light-emitting diode 200. The light-emitting diode 200 includes an LED chip (100, 110, 120) and a bracket 210. The LED chip (100, 110, 120) is fixedly connected to the bracket 210. The LED chip (100, 110, 120) can be a front-mounted LED, a flip-chip LED, or a flip-chip LED with the substrate removed. The light-emitting diode 200 can be used in backlight sources for mobile phones, computers, televisions, etc., and can also be used in indoor lighting, road lighting, and other fields.

[0055] See also Figure 2 The LED chip 100 has a flip-chip structure with the substrate removed. The LED chip 100 includes an N-type semiconductor layer 30, an active region 40, and a P-type semiconductor layer 50, which are stacked in sequence. The active region 40 includes multiple groups of blue-green light-mixing layers 41, which are stacked in sequence. Each group of blue-green light-mixing layers 41 includes a blue quantum well layer 42 and a green quantum well layer 43, which are adjacent to each other. The blue quantum well layer 42 and the green quantum well layer 43 within each group of blue-green light-mixing layers 41 are adjacent to each other. The blue quantum well layer 42 or the green quantum well layer 43 within a blue-green light-mixing layer 41 is located on the side of the N-type semiconductor layer 30 close to the P-type semiconductor layer 50. The emission wavelengths of the blue quantum well layers 42 in the multiple groups of blue-green light-mixing layers 41 are gradually changed, and the emission wavelengths of the green quantum well layers 43 in the multiple groups of blue-green light-mixing layers 41 are gradually changed. In this embodiment, there are three groups of blue-green light-mixing layers 41. Each of the three groups of blue-green mixed light layers 41 has a blue light quantum well layer 42 and a green light quantum well layer 43 that are adjacently arranged. Specifically, the blue light quantum well layer 42 in one group of the two adjacent groups of blue-green mixed light layers 41 and the green light quantum well layer 43 in the other group of the blue-green mixed light layers 41 are adjacently arranged. In other words, the three groups of blue-green mixed light layers 41 include three layers of blue light quantum well layers 42 and three layers of green light quantum well layers 43. The three layers of blue light quantum well layers 42 and the three layers of green light quantum well layers 43 are alternately arranged in sequence. Figure 2As shown, the blue quantum well layer 42 in a group of blue-green mixed light layers 41 disposed adjacent to the P-type semiconductor layer 50 is disposed adjacent to the P-type semiconductor layer 50. The green quantum well layer 43 in a group of blue-green mixed light layers 41 disposed adjacent to the N-type semiconductor layer 30 is disposed adjacent to the N-type semiconductor layer 30. In other embodiments, the green quantum well layer 43 in a group of blue-green mixed light layers 41 disposed adjacent to the P-type semiconductor layer 50 is disposed adjacent to the P-type semiconductor layer 50. The blue quantum well layer 42 in a group of blue-green mixed light layers 41 disposed adjacent to the N-type semiconductor layer 30 is disposed adjacent to the N-type semiconductor layer 30. The blue-green mixed light layers 41 can be four groups, five groups, etc., which is not limited in the present application.

[0056] The LED chip 100 has multiple groups of blue-green mixed light layers 41, consisting of blue quantum well layers 42 and green quantum well layers 43, within its active region 40. Each blue quantum well layer 42 within the multiple groups of blue-green mixed light layers 41 has a gradually varying emission wavelength, while each green quantum well layer 43 within the multiple groups of blue-green mixed light layers 41 has a gradually varying emission wavelength. This allows the LED chip 100 to emit uniform blue-green mixed light, expanding its application range while also avoiding the problem of poor luminescence performance caused by wavelength shift in blue and green light-emitting diodes (LEDs) in the prior art.

[0057] In some embodiments, the blue quantum well layer 42 and the green quantum well layer 43 both include In x Ga 1-x N. In the formula, In represents the indium element, x represents the molar fraction of the indium element, Ga represents the gallium element, 1-x represents the molar fraction of the gallium element, and N represents the nitrogen element. The active region 40 mostly uses InGaN material, by designing a specific structure, such as using InGaN material to replace the gallium nitride material that is more common in traditional blue light LEDs, and the In molar fraction in the InGaN quantum barrier is varied. The direction from the P-type semiconductor layer 50 to the N-type semiconductor layer 30 is arranged in a stepped manner. This design can make the holes more evenly distributed in the multi-quantum well. Not only does it improve the output light power of the LED, but it also reduces the loss in external quantum efficiency.

[0058] Specifically, in the blue quantum well layer 42 , when x is in the range of 0.06-0.22, the blue quantum well layer 42 emits blue light, and the wavelength of the blue light is between 380 nm and 500 nm.

[0059] For example, in the blue quantum well layer 42, x can be 0.07, 0.08, 0.09, 0.15, 0.18, or 0.2. Depending on the value of x, the corresponding blue light emission wavelength can be 390 nm, 400 nm, 420 nm, or 450 nm.

[0060] In some embodiments, in the green quantum well layer 43 , when x is in the range of 0.22-0.28, the green quantum well layer 43 emits green light, and the wavelength of the green light is between 500 nm and 560 nm.

[0061] For example, in the green quantum well layer 43, x can be 0.23, 0.24, 0.25, or 0.26. Depending on the value of x, the corresponding green light emission wavelength can be 510 nm, 520 nm, 530 nm, or 550 nm.

[0062] In some embodiments, a barrier layer (not shown) may be further provided between the green quantum well layer 43 and the blue quantum well layer 42 in each group of blue-green mixed light layers 41 to facilitate the movement of holes in the active region 40 .

[0063] In some embodiments, in order to ensure that the LED chip 100 has a better light mixing and color mixing effect, it is necessary to set the number of blue-green light mixing layers 41 in the LED chip 100 to be at least three. Figure 2 As shown, three groups of blue-green light-mixing layers 41 are provided within the LED chip 100. The three groups of blue-green light-mixing layers 41 include a first blue-green light-mixing layer 411, a second blue-green light-mixing layer 412, and a third blue-green light-mixing layer 413, which are stacked in sequence. The first blue-green light-mixing layer 411 is disposed adjacent to the P-type semiconductor layer 50, and the third blue-green light-mixing layer 413 is disposed adjacent to the N-type semiconductor layer 30. In other embodiments, the number of blue-green light-mixing layers 41 can also be four, five, or six groups.

[0064] Specifically, the first blue-green mixed optical layer 411 includes a first blue quantum well layer 421 and a first green quantum well layer 431. The second blue-green mixed optical layer 412 includes a second blue quantum well layer 422 and a second green quantum well layer 432. The third blue-green mixed optical layer 413 includes a third blue quantum well layer 423 and a third green quantum well layer 433.

[0065] In this embodiment, a first blue quantum well layer 421, a first green quantum well layer 431, a second blue quantum well layer 422, a second green quantum well layer 432, a third blue quantum well layer 423, and a third green quantum well layer 433 are sequentially arranged along the direction from the P-type semiconductor layer 50 to the N-type semiconductor layer 30. The first blue quantum well layer 421 is adjacent to the P-type semiconductor layer 50, and the third green quantum well layer 433 is adjacent to the N-type semiconductor layer 30. In other embodiments, the first green quantum well layer 431, the first blue quantum well layer 421, the second green quantum well layer 432, the second blue quantum well layer 422, the third green quantum well layer 433, and the third blue quantum well layer 423 may also be sequentially arranged along the direction from the P-type semiconductor layer 50 to the N-type semiconductor layer 30. The first green quantum well layer 431 is adjacent to and electrically connected to the P-type semiconductor layer 50. The third blue quantum well layer 423 is adjacent to and electrically connected to the N-type semiconductor layer 30.

[0066] It should be noted that, regardless of whether the green quantum well layer 43 is disposed adjacent to the P-type semiconductor layer 50 or the blue quantum well layer 42 is disposed adjacent to the P-type semiconductor layer 50, it is sufficient as long as the blue quantum well layer 42 in any one set of blue-green light mixing layers 41 is disposed adjacent to the green quantum well layer 43 in another adjacent set of blue-green light mixing layers 41. In this way, the LED chip 100 can achieve a uniform blue-green light mixing effect.

[0067] In some embodiments, the N-type semiconductor layer 30 includes a stacked N-type gallium nitride layer 31 and an N-type cladding layer 32, with the N-type cladding layer 32 positioned adjacent to the active region 40. The P-type semiconductor layer 50 includes a sequentially stacked P-type cladding layer 51, a P-type gallium nitride layer 52, and a P-type contact layer 53, with the P-type cladding layer 51 positioned adjacent to the active region 40. In this embodiment, the N-type cladding layer 32 is electrically connected to the third green quantum well layer 433. The first blue quantum well layer 421 is electrically connected to the P-type cladding layer 51. The P-type cladding layer 51 can provide good electrical contact to reduce contact resistance, improve current transmission efficiency, and protect the P-type gallium nitride layer 52. The P-type contact layer 53 can evenly distribute current and protect the P-type gallium nitride layer 52.

[0068] Please refer to Figure 3 , is an LED chip 110 having a substrate. The difference between the LED chip 100 and the LED chip 110 is that the LED chip 110 has a substrate 10 and a buffer layer 20 disposed adjacent to each other. The buffer layer 20 is located between the substrate 10 and the N-type semiconductor layer 30.

[0069] In this embodiment, the active region 40 is located on the side of the N-type semiconductor layer 30 close to the P-type semiconductor layer 50. The substrate 10 can be sapphire, which is an inorganic crystal material with very high hardness, extremely high transparency, and is not prone to chemical reactions. Using sapphire as the substrate 10 can support the buffer layer 20 generated by high-quality gallium nitride (GaN), which not only improves the optoelectronic performance and reliability of the light-emitting diode 200, but also reduces the dislocation defects of the subsequent aluminum gallium nitride (AlGaN) epitaxial layer. In other embodiments, silicon (Si) or silicon carbide (SiC) can also be used as the substrate 10 material. When Si or SiC is used as the substrate 10 material, the material of the corresponding buffer layer 20 is also modified synchronously, and this application is not limited to this.

[0070] Specifically, the substrate 10 and buffer layer 20 in the LED chip 110 are vaporized and separated using excimer laser lift-off (LLO) technology to obtain the LED chip 100. The other structures of the LED chip 110 are the same as those of the LED chip 100 and are not described in detail in this application. Among them, LLO technology is a typical mechanical exfoliation method that mainly uses an optical system to focus a high-energy laser at the interface between the target film and the substrate 10 to decompose the substrate 10 and the buffer layer 20.

[0071] Please refer to Figure 4 , is an LED chip 120 in a normal-mounted structure. The LED chip 120 and the LED chip 110 are identical except for the orientation of the layers. This application will not elaborate further.

[0072] Furthermore, when the LED chips (100, 110, 120) are lit for a long time, wavelength shift will occur in the LED chips 100 under high current. At the same time, the light output power of the LED chips 100 is saturated, and the excess electrical energy is converted into heat energy. Heat is generated inside the LED chips (100, 110, 120). To avoid excessive heat accumulation inside the LED chips (100, 110, 120), which may damage the LED chips (100, 110, 120), the light emission wavelengths of the multiple groups of blue-green mixed light layers 41 are set to be different according to the different structures of the LED chips (100, 110, 120).

[0073] In some embodiments, as Figure 2 and Figure 3 As shown, in the LED chip (100, 110), from the N-type semiconductor layer 30 to the P-type semiconductor layer 50, the value of x of each blue light quantum well layer 42 in the multiple groups of blue-green mixed light layers 41 and the value of x of each green light quantum well layer 43 in the multiple groups of blue-green mixed light layers 41 gradually decrease.

[0074] In this embodiment, the value of x of the first blue quantum well layer 421 is set to be smaller than the value of x of the second blue quantum well layer 422. The value of x of the second blue quantum well layer 422 is set to be smaller than the value of x of the third blue quantum well layer 423. Similarly, the value of x of the first green quantum well layer 431 is set to be smaller than the value of x of the second green quantum well layer 432. The value of x of the second green quantum well layer 432 is set to be smaller than the value of x of the third green quantum well layer 433.

[0075] It is understood that, because the value of x in each blue quantum well layer 42 is different, the wavelength of blue light emitted by each blue quantum well layer 42 is also different. Similarly, because the value of x in each green quantum well layer 43 is different, the wavelength of green light emitted by each green quantum well layer 43 is also different.

[0076] Similarly, see Figure 4 In the LED chip 120, from the N-type semiconductor layer 30 to the P-type semiconductor layer 50, the value of x of each blue light quantum well layer 42 in the multiple groups of blue-green mixed light layers 41 and the value of x of each green light quantum well layer 43 in the multiple groups of blue-green mixed light layers 41 gradually increase.

[0077] In this embodiment, the value of x of the first blue quantum well layer 421 is set to be greater than the value of x of the second blue quantum well layer 422. The value of x of the second blue quantum well layer 422 is set to be greater than the value of x of the third blue quantum well layer 423. Similarly, the value of x of the first green quantum well layer 431 is set to be greater than the value of x of the second green quantum well layer 432. The value of x of the second green quantum well layer 432 is set to be greater than the value of x of the third green quantum well layer 433.

[0078] That is, depending on the structure of the LED chips (100, 110, 120), the values of x of the blue quantum well layers 42 in the multiple groups of blue-green light mixing layers 41 and the values of x of the green quantum well layers 43 in the multiple groups of blue-green light mixing layers 41 are set to gradually decrease or increase as the distance from the N-type semiconductor layer 30 to the P-type semiconductor layer 50 is approached. This prevents heat generated by the LED chips (100, 110, 120) from being concentrated in one place when the LED chips (100, 110, 120) are lit for a long time, thereby damaging the LED chips (100, 110, 120). Furthermore, this allows the LED chips (100, 110, 120) to achieve uniform color and light mixing.

[0079] Figures 2 to 4The LED chips (100, 110, 120) shown in the figure have multiple groups of blue-green light mixing layers 41 arranged in an active region 40. The multiple groups of blue-green light mixing layers 41 are stacked in sequence. Each group of blue-green light mixing layers 41 includes a blue light quantum well layer 42 and a green light quantum well layer 43. By adjusting the values of In of each blue light quantum well layer 42 in the multiple groups of blue-green light mixing layers 41, the wavelengths of blue light emitted by each blue light quantum well layer 42 are made different from each other. Also, by adjusting the values of In of the green light quantum well layer 43 in the multiple groups of blue-green light mixing layers 41, the wavelengths of green light emitted by each green light quantum well layer 43 are made different from each other. Thus, after the multiple blue lights with different wavelengths are mixed with the multiple green lights with different wavelengths, a uniform blue-green light mixing effect is formed. At the same time, the heat generated by the LED chips (100, 110, 120) during light emission is prevented from being concentrated in one place, thereby damaging the LED chips (100, 110, 120).

[0080] The above embodiments are only used to illustrate the technical solution of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to the above preferred embodiments, those skilled in the art should understand that the technical solution of the present invention may be modified or replaced with equivalents without departing from the spirit and scope of the technical solution of the present invention.

Claims

1. An LED chip comprising an N-type semiconductor layer, an active region, and a P-type semiconductor layer stacked in sequence, characterized in that: The active area includes multiple groups of blue-green mixed light layers, which are stacked in sequence, and each group of blue-green mixed light layers includes a blue light quantum well layer and a green light quantum well layer that are adjacent to each other in sequence; the light emission wavelength of each blue light quantum well layer in the multiple groups of blue-green mixed light layers is gradually changed, and the light emission wavelength of each green light quantum well layer in the multiple groups of blue-green mixed light layers is gradually changed.

2. The LED chip according to claim 1, wherein The base materials of the blue light quantum well layer and the green light quantum well layer both include In x Ga 1-x N, where x represents the molar fraction of In, and 1-x represents the molar fraction of Ga. In the blue light quantum well layer, when x is in the range of 0.06-0.22, the blue light quantum well layer emits blue light, and the blue light emission wavelength is between 380nm and 500nm.

3. The LED chip according to claim 2, wherein: In the green light quantum well, when x is in the range of 0.22-0.28, the green light quantum well layer emits green light, and the wavelength of the green light is between 500nm and 560nm.

4. The LED chip according to claim 2, wherein: From the direction where the N-type semiconductor layer approaches the P-type semiconductor layer, the value of x of each blue quantum well layer in the multiple groups of the blue-green mixed light layers and the value of x of each green quantum well layer in the multiple groups of the blue-green mixed light layers gradually decrease.

5. The LED chip according to claim 2, wherein: From the direction where the N-type semiconductor layer approaches the P-type semiconductor layer, the value of x of each blue quantum well layer in the multiple groups of the blue-green mixed light layers and the value of x of each green quantum well layer in the multiple groups of the blue-green mixed light layers gradually increase.

6. The LED chip according to claim 1, wherein: The number of the blue-green light mixing layers is at least three.

7. The LED chip according to claim 1, wherein: The P-type semiconductor layer includes a P-type contact layer, a P-type gallium nitride layer and a P-type cladding layer stacked in sequence. The P-type cladding layer and the active area are adjacent to each other and are electrically connected to each other.

8. The LED chip according to claim 1, wherein The N-type semiconductor layer includes an N-type gallium nitride layer and an N-type cladding layer that are stacked. The N-type cladding layer and the active region are adjacent to each other and are electrically connected to each other.

9. The LED chip according to claim 1, wherein: A substrate and a buffer layer are further provided on a side of the N-type semiconductor layer away from the P-type semiconductor layer. The buffer layer and the substrate are adjacently arranged, and the buffer layer is located between the substrate and the N-type semiconductor layer.

10. A light emitting diode, characterized in that: The invention comprises a bracket and an LED chip as claimed in any one of claims 1 to 9, wherein the LED chip is fixedly connected to the bracket.

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