Silicon wafer electroplating pretreatment equipment

Abstract

The utility model provides silicon wafer electroplating pretreatment equipment, and relates to the technical field of solar cells. The silicon wafer electroplating pretreatment equipment comprises a hydrogen fluorine corrosion assembly; the hydrogen fluorine corrosion assembly comprises a hydrofluoric acid mist chamber and a waste gas recovery chamber, and the hydrofluoric acid mist chamber is arranged outside the waste gas recovery chamber in a sleeving manner; the hydrofluoric acid mist chamber is provided with a steam spraying opening, and the steam spraying opening is used for being opposite to the edge surface of a silicon wafer; the waste gas recovery chamber is provided with a recovery port, the recovery port is used for being opposite to the side wall of the silicon wafer, and the steam spraying port is communicated with the recovery port. According to the silicon wafer electroplating pretreatment equipment provided by the utility model, the technical problem of electrical property loss or low production efficiency caused by laser grooving in the prior art is solved.

Description

Technical Field

[0001] The utility model relates to the technical field of solar cells, in particular to silicon wafer electroplating pre-processing equipment. Background Art

[0002] With the development of the solar cell industry, copper electroplating is increasingly being used to replace silver paste. For example, in TOPCon (Tunnel Oxide Passivated Cell) electroplating, the process involves creating grooves in the silicon nitride layer of the silicon wafer after coating to expose the underlying silicon. Metal is then electroplated onto the silicon to create the gate lines. This process uses laser grooving.

[0003] During laser grooving, the thickness of the silicon nitride film will affect the grooving effect; using the same spot energy for grooving, the area with thin silicon nitride film can be completely opened, but the area with thick silicon nitride film cannot be completely opened; this will result in poor electroplating effect in the area with thick silicon nitride film.

[0004] Due to the plating effect of the graphite boat, the thickness of the silicon nitride film with a width of 1 mm at the edge of the silicon wafer is greater than the thickness of the silicon nitride film in the middle area of the silicon wafer; the existing technology adopts the method of increasing the laser grooving power or performing secondary grooving at the edge to achieve complete grooving, but increasing the laser grooving power will cause damage to the middle area of the silicon wafer, which in turn leads to the problem of loss of electrical performance; performing secondary grooving at the edge will lead to low production efficiency and alignment offset problems. Utility Model Content

[0005] The purpose of the utility model is to provide a silicon wafer electroplating pre-treatment device to alleviate the technical problems existing in the prior art of electrical performance loss or low production efficiency caused by laser grooving.

[0006] In order to solve the above technical problems, the technical solution provided by the present invention is:

[0007] The silicon wafer electroplating pre-treatment equipment provided by the utility model includes a hydrogen-fluorine etching component;

[0008] The hydrofluoric acid corrosion component includes a hydrofluoric acid mist chamber and a waste gas recovery chamber, and the hydrofluoric acid mist chamber is arranged outside the waste gas recovery chamber;

[0009] The hydrofluoric acid mist chamber is provided with a steam spray port, and the steam spray port is used to face the edge surface of the silicon wafer;

[0010] The waste gas recovery chamber is provided with a recovery port, the recovery port is used to be opposite to the side wall of the silicon wafer, and the steam injection port is communicated with the recovery port.

[0011] Furthermore, the hydrofluoric acid corrosion component further includes a protective gas chamber, which is arranged outside the hydrofluoric acid mist chamber and has an air outlet;

[0012] The air outlet is located at a side of the steam injection port away from the recovery port.

[0013] Furthermore, there are two steam injection ports and two gas outlets;

[0014] The two steam injection ports are arranged opposite to each other, and are respectively used to face the upper surface and the lower surface of the edge of the silicon wafer;

[0015] The two air outlets are respectively located at one side of the two steam injection ports away from the recovery port.

[0016] Furthermore, the hydrofluoric acid corrosion component includes a first bending wall and a second bending wall, the second bending wall is sleeved on the outer periphery of the first bending wall; the waste gas recovery chamber is formed in the first bending wall; the hydrofluoric acid mist chamber is formed between the second bending wall and the first bending wall.

[0017] Furthermore, the first bending wall includes a first bending section and a first inclined section, the first inclined section is connected to the first bending section and gradually inclines toward the interior of the exhaust gas recovery chamber; the second bending wall includes a second bending section and a second inclined section, the second bending section is located at the outer periphery of the first bending section, the second inclined section is located at the outer periphery of the first inclined section, the second inclined section is connected to the second bending section and gradually inclines toward the interior of the exhaust gas recovery chamber; a steam injection section is formed between the first inclined section and the second inclined section, and the end of the steam injection section is the steam injection port.

[0018] Furthermore, the cross-sectional size of the steam injection section gradually decreases along the fluid flow direction.

[0019] Furthermore, the hydrofluoric corrosion component also includes a third bending wall, the second bending wall is located between the first bending wall and the third bending wall; the protective gas chamber is formed between the second bending wall and the third bending wall.

[0020] Furthermore, the third bending wall includes a third bending section and a third inclined section, the third bending section is located on the outer periphery of the second bending section, the third inclined section is located on the outer periphery of the second inclined section, the third inclined section is connected to the third bending section, and gradually inclines toward the interior of the exhaust gas recovery chamber; an air outlet section is formed between the third inclined section and the second inclined section, and the end of the air outlet section is the air outlet.

[0021] Furthermore, at least one group of the hydrogen-fluorine etching components is provided; two hydrogen-fluorine etching components are provided in each group, and the two hydrogen-fluorine etching components in the same group are arranged opposite to each other; when multiple groups of the hydrogen-fluorine etching components are provided, the multiple groups of hydrogen-fluorine etching components are arranged at intervals along the transmission direction of the silicon wafer.

[0022] Furthermore, the silicon wafer electroplating pretreatment equipment further includes a circulation system, which is communicated with the hydrofluoric acid mist chamber; the circulation system includes a hydrofluoric acid barrel, a pump body and a first connecting pipeline;

[0023] The hydrofluoric acid barrel is used to contain hydrofluoric acid liquid and includes an air inlet pipe, one end of which extends into the liquid surface of the hydrofluoric acid liquid and the other end of which is connected to the first connecting pipe;

[0024] The first connecting pipeline is in communication with the hydrofluoric acid mist chamber, and the pump body is installed on the first connecting pipeline. The first connecting pipeline is equipped with a regulating valve.

[0025] Based on the above technical solutions, the technical effects that can be achieved by this utility model are analyzed as follows:

[0026] The silicon wafer electroplating pretreatment equipment provided by the utility model includes a hydrofluoric acid etching component; the hydrofluoric acid etching component includes a hydrofluoric acid mist chamber and a waste gas recovery chamber, and the hydrofluoric acid mist chamber is arranged outside the waste gas recovery chamber; the hydrofluoric acid mist chamber is provided with a steam spray port, and the steam spray port is used to face the edge surface of the silicon wafer; the waste gas recovery chamber is provided with a recovery port, and the recovery port is used to face the side wall of the silicon wafer, and the steam spray port is connected to the recovery port.

[0027] The principle of this silicon wafer electroplating pre-treatment equipment is the reaction of hydrogen and fluorine with silicon nitride: Si3N4+4HF+9H2O=3H2SiO3 (precipitation)+4NH4F, in water, general reaction;

[0028] Si3N4+12HF=3SiF4↑+4NH3↑, under specific conditions, carried out in water, gas can be observed when heated.

[0029] When using the silicon wafer electroplating pre-treatment equipment, the edge of the silicon wafer surrounding the plating area is placed near the steam nozzle of the hydrofluoric acid mist chamber. The steam nozzle sprays hydrofluoric acid vapor onto the edge surface of the silicon wafer to corrode the surrounding silicon nitride, so that the thickness of the silicon nitride film at the edge of the silicon wafer is consistent with the thickness of the silicon nitride film in the middle of the silicon wafer. Therefore, the same spot power can be used to groove the silicon wafer during the laser grooving process, avoiding the problem of damage to the middle area of the silicon wafer due to high laser grooving power, and also avoiding the problem of low production efficiency and alignment offset caused by secondary grooving of the edge.

[0030] The exhaust gas recovery chamber is used to extract the acid mist. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the specific implementation methods of the utility model or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0032] Figure 1 A cross-sectional view of a hydrogen-fluorine etching component in a silicon wafer electroplating pre-treatment device provided by an embodiment of the present invention;

[0033] Figure 2 An enlarged view of a hydrofluoric etching component in a silicon wafer electroplating pre-treatment device provided by an embodiment of the present invention;

[0034] Figure 3 This is a schematic structural diagram of the silicon wafer electroplating pre-treatment equipment provided in an embodiment of the present utility model.

[0035] icon:

[0036] 100-hydrogen fluoride corrosion component; 110-hydrofluoric acid mist chamber; 111-steam spray port; 120-waste gas recovery chamber; 121-recovery port; 130-shielding gas chamber; 131-gas outlet; 140-first bending wall; 141-first bending section; 142-first inclined section; 150-second bending wall; 151-second bending section; 152-second inclined section; 160-steam spray section; 170-third bending wall; 171-third bending section; 172-third inclined section; 180-gas outlet section;

[0037] 210 - hydrofluoric acid barrel; 211 - air inlet pipe; 212 - air outlet pipe; 220 - pump body; 230 - first connecting pipeline; 231 - first main pipeline; 232 - first branch pipeline; 240 - regulating valve; 250 - second connecting pipeline; 251 - second main pipeline; 252 - second branch pipeline;

[0038] 300-silicon wafer; 400-external protective gas source;

[0039] 510-transmission platform; 520-guide member;

[0040] a-Transmission direction of silicon wafer. DETAILED DESCRIPTION

[0041] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0042] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort are also within the scope of protection of the present invention.

[0043] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0044] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer" and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the utility model product is typically placed when in use. These terms are intended solely to facilitate the description of this utility model and to simplify the description, and are not intended to indicate or imply that the device or component referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first," "second," and "third," etc., are used solely to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0045] Furthermore, terms such as "horizontal," "vertical," and "overhanging" do not necessarily imply that a component must be absolutely horizontal or overhanging, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but rather that it can be slightly tilted.

[0046] It should also be noted that, in the description of this utility model, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0047] The following embodiments of the present invention are described in detail with reference to the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments may be combined with each other.

[0048] With the development of the solar cell industry, the technology of copper electroplating replacing silver paste is becoming more and more widely used. Taking TOPCon (Tunnel Oxide Passivated Cell) cell electroplating as an example, its process route is: after coating, the silicon nitride layer of the silicon wafer 300 is grooved to expose the silicon underneath, and then metal is electroplated on the silicon to complete the gate line production. The grooves in this process are made by laser grooving. During laser grooving, the thickness of the silicon nitride film will affect the grooving effect; using the same spot energy for grooving, the area with thin silicon nitride film can be completely opened, but the area with thick silicon nitride film cannot be completely opened; this will result in poor electroplating effect in the area with thick silicon nitride film. Due to the plating effect of the graphite boat, the thickness of the silicon nitride film with a width of 1 mm at the edge of the silicon wafer 300 is more than 50% greater than the thickness of the silicon nitride film in the middle area of the silicon wafer 300; the existing technology adopts the method of increasing the laser grooving power or performing secondary grooving at the edge to achieve complete grooving, but increasing the laser grooving power will cause damage to the middle area of the silicon wafer 300, which in turn leads to the problem of loss of electrical performance; performing secondary grooving at the edge will lead to low production efficiency and alignment offset problems.

[0049] In view of this, the silicon wafer electroplating pretreatment equipment provided by the embodiment of the present invention includes a hydrofluoric acid etching component 100; the hydrofluoric acid etching component 100 includes a hydrofluoric acid mist chamber 110 and a waste gas recovery chamber 120, and the hydrofluoric acid mist chamber 110 is arranged outside the waste gas recovery chamber 120; the hydrofluoric acid mist chamber 110 is provided with a steam spray port 111, and the steam spray port 111 is used to face the edge surface of the silicon wafer 300; the waste gas recovery chamber 120 is provided with a recovery port 121, and the recovery port 121 is used to face the side wall of the silicon wafer 300, and the steam spray port 111 is connected to the recovery port 121.

[0050] Specifically, see Figure 1 and Figure 2The hydrofluoric acid corrosion component 100 includes a first bending wall 140 and a second bending wall 150, and the second bending wall 150 is sleeved on the outer periphery of the first bending wall 140; a waste gas recovery chamber 120 is formed in the first bending wall 140; and a hydrofluoric acid mist chamber 110 is formed between the second bending wall 150 and the first bending wall 140. Furthermore, the first bent wall 140 includes a first bent section 141 and a first inclined section 142. The first inclined section 142 is connected to the first bent section 141 and gradually tilts toward the interior of the exhaust gas recovery chamber 120. The second bent wall 150 includes a second bent section 151 and a second inclined section 152. The second bent section 151 is located on the periphery of the first bent section 141, and the second inclined section 152 is located on the periphery of the first inclined section 142. The second inclined section 152 is connected to the second bent section 151 and gradually tilts toward the interior of the exhaust gas recovery chamber 120. A steam injection section 160 is formed between the first inclined section 142 and the second inclined section 152. The end of the steam injection section 160 is the steam injection port 111. Preferably, the cross-sectional dimensions of the steam injection section 160 gradually decrease along the fluid flow direction to increase the dynamics of the fluid at the steam injection port 111.

[0051] The principle of the silicon wafer electroplating pretreatment equipment is the reaction of hydrogen fluoride with silicon nitride: Si3N4 + 4HF + 9H2O = 3H2SiO3 (precipitation) + 4NH4F, in water for a general reaction; Si3N4 + 12HF = 3SiF4↑ + 4NH3↑, under specific conditions, in water, where gas can be observed upon heating. When using the silicon wafer electroplating pretreatment equipment, the surrounding plating area of the silicon wafer 300 is placed near the steam nozzle 111 of the hydrofluoric acid mist chamber 110. The steam nozzle 111 sprays hydrofluoric acid vapor onto the edge surface of the silicon wafer 300, corroding the surrounding silicon nitride. This ensures that the thickness of the silicon nitride film at the edge of the silicon wafer 300 is consistent with that in the center of the silicon wafer 300. This allows the same spot power to be used during the laser grooving process to grooving the silicon wafer 300. This avoids the problem of high laser grooving power causing damage to the center of the silicon wafer 300, and also avoids the problem of secondary grooving at the edge, which leads to low production efficiency and misalignment. The exhaust gas recovery chamber 120 is used to remove the acid mist. This silicon wafer electroplating pre-treatment equipment can etch the silicon nitride at the edge of the silicon wafer 300, resolving the problem of excessively thick silicon nitride film at the edge caused by wraparound plating, which makes laser grooving difficult. It can also improve the effectiveness of grooving and increase laser grooving productivity.

[0052] The following is a detailed description of the structure of silicon wafer electroplating pre-treatment equipment:

[0053] In an optional solution of the embodiment of the present invention, the hydrofluoric acid corrosion component 100 further includes a protective gas chamber 130 , which is arranged outside the hydrofluoric acid mist chamber 110 and has an air outlet 131 ; the air outlet 131 is located on the side of the steam injection port 111 away from the recovery port 121 .

[0054] Specifically, see Figure 3 The protective gas chamber 130 is connected to an external protective gas source 400, which is used to input protective gas into the protective gas chamber 130. The protective gas chamber 130 is used to output protective gas to the surface of the silicon wafer 300 to ensure that the central area of the silicon wafer 300 is not corroded by hydrofluoric acid vapor. When using this silicon wafer electroplating pretreatment equipment, the edge of the silicon wafer 300 surrounding the plating area is placed near the steam nozzle 111 of the hydrofluoric acid mist chamber 110. The steam nozzle 111 sprays hydrofluoric acid vapor onto the edge surface of the silicon wafer 300 to corrode the surrounding silicon nitride. When the film thickness at the edge of the silicon wafer 300 is corroded to an appropriate thickness, the protective gas chamber 130 outputs protective gas to end the corrosion.

[0055] The protective gas chamber 130 is used to output protective gas to the surface of the silicon wafer 300 to ensure that the middle area of the silicon wafer 300 is not corroded by hydrofluoric acid vapor.

[0056] As another embodiment, when the film thickness at the edge of the silicon wafer 300 is etched to a suitable thickness, the silicon wafer 300 is moved so as to be transferred outside the coverage area of the steam injection port 111 to terminate the etching.

[0057] In an optional solution of an embodiment of the present invention, two steam nozzles 111 and two air outlets 131 are provided; the two steam nozzles 111 are arranged opposite to each other, respectively used to be opposite to the upper surface and lower surface of the edge of the silicon wafer 300; the two air outlets 131 are respectively located on the side of the two steam nozzles 111 away from the recovery port 121.

[0058] Specifically, see Figure 1 and Figure 2 The hydrofluorine corrosion assembly 100 further includes a third bending wall 170. The second bending wall 150 is located between the first bending wall 140 and the third bending wall 170. A protective gas chamber 130 is formed between the second bending wall 150 and the third bending wall 170. Furthermore, the third bending wall 170 includes a third bending section 171 and a third inclined section 172. The third bending section 171 is located on the periphery of the second bending section 151. The third inclined section 172 is located on the periphery of the second inclined section 152. The third inclined section 172 is connected to the third bending section 171 and gradually tilts toward the interior of the exhaust gas recovery chamber 120. A gas outlet section 180 is formed between the third inclined section 172 and the second inclined section 152. The end of the gas outlet section 180 is the gas outlet 131. In this embodiment, both ends of the first bending section 141 are connected to the first inclined sections 142, and the two first inclined sections 142 are symmetrically arranged; similarly, both ends of the second bending section 151 are connected to the second inclined sections 152, and the two second inclined sections 152 are symmetrically arranged; both ends of the third bending section 171 are connected to the third inclined sections 172, and the two third inclined sections 172 are symmetrically arranged.

[0059] There are two steam injection ports 111 and two gas outlets 131 , so as to simultaneously etch the upper and lower surfaces of the edge of the silicon wafer 300 , thereby improving production efficiency.

[0060] In an optional solution of the embodiment of the present invention, the silicon wafer electroplating pre-treatment equipment further includes a circulation system, which is connected to the hydrofluoric acid mist chamber 110.

[0061] The circulation system is used to input hydrofluoric acid vapor into the hydrofluoric acid mist chamber 110 .

[0062] In the optional solution of the embodiment of the present utility model, see Figure 3 The circulation system includes a hydrofluoric acid barrel 210, a pump body 220 and a first connecting pipeline 230; the hydrofluoric acid barrel 210 is used to hold hydrofluoric liquid and includes an air inlet pipe 211, one end of the air inlet pipe 211 extends into the liquid surface of the hydrofluoric liquid, and the other end is connected to the input end of the first connecting pipeline 230; the output end of the first connecting pipeline 230 is connected to the hydrofluoric acid mist chamber 110, and the pump body 220 is installed on the first connecting pipeline 230.

[0063] Specifically, the first connecting pipe 230 is made of a hydrofluoric acid resistant material. The pump body 220 is configured as an air pump.

[0064] The air inlet pipe 211 is used to bubble the hydrofluoric acid liquid below the liquid level. The input end of the first connecting pipe 230 is connected to the hydrofluoric acid barrel 210 through the air inlet pipe 211, and the output end is connected to the hydrofluoric acid mist chamber 110, thereby inputting hydrofluoric acid vapor into the hydrofluoric acid mist chamber 110. An air pump is installed on the first connecting pipe to provide an air source for bubbling the hydrofluoric acid liquid.

[0065] In an optional solution of the embodiment of the present invention, the first connecting pipeline 230 is installed with a regulating valve 240 .

[0066] Specifically, the regulating valve 240 can be configured as a pneumatic regulating valve, an electric regulating valve, or a hydraulic regulating valve.

[0067] The regulating valve 240 is used to adjust the flow rate of the hydrofluoric acid vapor.

[0068] In an optional scheme of an embodiment of the present invention, the circulation system also includes a second connecting pipe 250, and the hydrofluoric acid barrel 210 includes an outlet pipe 212; the input end of the second connecting pipe 250 is connected to the waste gas recovery chamber 120, and the output end of the second connecting pipe 250 is connected to the outlet pipe 212; the end of the outlet pipe 212 away from the second connecting pipe 250 extends into the hydrofluoric acid barrel 210.

[0069] Specifically, the second connecting pipe 250 is made of a hydrofluoric acid resistant material. When the second connecting pipe 250 is used to connect the waste gas recovery chamber 120 with the hydrofluoric acid barrel 210, the air pump installed on the first connecting pipe 230 can also provide power for waste gas recovery.

[0070] The second connecting pipe 250 connects the waste gas recovery chamber 120 with the hydrofluoric acid barrel 210 to achieve fluid communication, thereby recovering the waste gas into the hydrofluoric acid barrel 210 for reuse.

[0071] As another embodiment, the waste gas recovery chamber 120 can be directly sent to the acid discharge for treatment.

[0072] In an optional solution of the embodiment of the present utility model, at least one group of hydrogen-fluorine etching components 100 is provided; two hydrogen-fluorine etching components 100 are provided in each group, and the two hydrogen-fluorine etching components 100 in the same group are arranged opposite to each other; when multiple groups of hydrogen-fluorine etching components 100 are provided, the multiple groups of hydrogen-fluorine etching components 100 are arranged at intervals along the transmission direction a of the silicon wafer.

[0073] Specifically, in this embodiment, three groups of hydrofluorine etching components 100 are provided, and the three groups of hydrofluorine etching components 100 are spaced apart along the transmission direction a of the silicon wafer; each group of hydrofluorine etching components 100 includes two oppositely arranged hydrofluorine etching components 100. Furthermore, each hydrofluorine etching component 100 is equipped with a circulation system, that is, each hydrofluorine etching component 100 is equipped with a hydrofluoric acid barrel 210; or, the three hydrofluorine etching components 100 located on the same side of the three groups share a hydrofluoric acid barrel 210 and an air pump, and the first connecting pipeline 230 includes a first main pipeline 231 and three first branches 232, the input end of the first main pipeline 231 is connected to the air inlet pipe 211, the output end of the first main pipeline 231 is connected to the input end of the three first branches 232, and the three The output ends of the first branches 232 are respectively connected to the hydrofluoric acid mist chambers 110 of the three hydrofluoric corrosion components 100; the air pump is installed on the first main line 231; the second connecting pipeline 250 includes a second main line 251 and three second branches 252, the input ends of the three second branches 252 are respectively connected to the waste gas recovery chambers 120 of the three hydrofluoric corrosion components 100, the output ends of the three second branches 252 are all connected to the input end of the second main line 251, and the output end of the second main line 251 is connected to the outlet pipe 212.

[0074] The two hydrogen-fluorine etching components 100 in the same group are arranged opposite to each other, so as to perform electroplating pre-treatment on the two edges of the silicon wafer 300 at the same time, thereby further improving production efficiency.

[0075] In an optional solution of the embodiment of the present utility model, the silicon wafer electroplating pre-treatment equipment further includes a transmission guide component; the transmission guide component is located between two hydrogen-fluorine etching components 100 in the same group and is used to transmit the silicon wafer 300.

[0076] Specifically, see Figure 3 The transmission direction of the transmission guide component is set along the transmission direction a of the silicon wafer.

[0077] The transfer guide assembly is used to transfer the silicon wafer 300 to a position opposite to the hydrofluoric etching assembly 100 to etch the edge of the silicon wafer 300, and to transfer the silicon wafer 300 to the next process after the etching is completed.

[0078] In an optional solution of an embodiment of the present invention, the transmission guide assembly includes a transmission platform 510 and a guide member 520; the transmission platform 510 extends along the transmission direction a of the silicon wafer and is located between two hydrofluoric etching assemblies 100 in the same group; guide members 520 are installed on both sides of the transmission platform 510, and the guide members 520 are used to guide the movement direction of the silicon wafer 300.

[0079] Specifically, in this embodiment, the transport platform 510 is configured as a transport belt, which is driven by a motor or other drive element to support and transport the silicon wafer 300. Furthermore, the transport belt is made of acid- and alkali-resistant materials. The guide members 520 are configured as guide wheels, which rotate along their circumference to guide the movement of the silicon wafer 300 and maintain a stable transport direction. Preferably, guide wheels are installed on both sides of each hydrofluoric etching assembly 100 along the transport direction a of the silicon wafer.

[0080] The transmission belt supports and transmits the silicon wafer 300 , and the guide wheel guides the movement direction of the silicon wafer 300 , thereby ensuring that the edge of the silicon wafer 300 and the steam injection port 111 are aligned with each other.

[0081] The following is a detailed description of how to use silicon wafer electroplating pre-treatment equipment:

[0082] After the silicon wafer 300 is transferred to the hydrofluoric etching assembly 100 via a transmission belt, the position of the silicon wafer 300 is adjusted by a guide wheel so that the edge of the silicon wafer 300 surrounding the plating area falls within the coverage of the steam nozzle 111; the circulation system operates, and the hydrofluoric acid vapor in the hydrofluoric acid mist chamber 110 is sprayed onto the edge of the silicon wafer 300 through the steam nozzle 111 to corrode the surrounding silicon nitride. When the film thickness is etched to an appropriate thickness, the corrosion can be terminated by blowing a protective gas; alternatively, the speed of the transmission belt can be controlled to transfer the silicon wafer 300 to outside the coverage of the steam nozzle 111 to terminate the corrosion.

[0083] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A silicon wafer electroplating pre-treatment device, characterized in that: include: Hydrogen fluoride corrosion component (100); The hydrofluoric acid corrosion assembly (100) comprises a hydrofluoric acid mist chamber (110) and a waste gas recovery chamber (120), wherein the hydrofluoric acid mist chamber (110) is sleeved outside the waste gas recovery chamber (120); The hydrofluoric acid mist chamber (110) is provided with a steam spray port (111), and the steam spray port (111) is used to face the edge surface of the silicon wafer (300); The waste gas recovery chamber (120) is provided with a recovery port (121), the recovery port (121) is used to be opposite to the side wall of the silicon wafer (300), and the steam injection port (111) is communicated with the recovery port (121).

2. The silicon wafer electroplating pre-treatment equipment according to claim 1, characterized in that: The hydrofluoric acid corrosion component (100) further includes a protective gas chamber (130), wherein the protective gas chamber (130) is sleeved outside the hydrofluoric acid mist chamber (110) and is provided with a gas outlet (131); The gas outlet (131) is located on a side of the steam injection port (111) away from the recovery port (121).

3. The silicon wafer electroplating pre-treatment equipment according to claim 2, characterized in that: There are two steam injection ports (111) and two gas outlets (131); The two steam injection ports (111) are arranged opposite to each other and are respectively used to face the upper surface and the lower surface of the edge of the silicon wafer (300); The two gas outlets (131) are respectively located on one side of the two steam injection ports (111) away from the recovery port (121).

4. The silicon wafer electroplating pre-treatment equipment according to claim 2, characterized in that: The hydrofluoric acid corrosion component (100) comprises a first bending wall (140) and a second bending wall (150), wherein the second bending wall (150) is sleeved on the outer periphery of the first bending wall (140); the waste gas recovery chamber (120) is formed in the first bending wall (140); and the hydrofluoric acid mist chamber (110) is formed between the second bending wall (150) and the first bending wall (140).

5. The silicon wafer electroplating pre-treatment equipment according to claim 4, characterized in that: The first bending wall (140) includes a first bending section (141) and a first inclined section (142), the first inclined section (142) is connected to the first bending section (141) and gradually inclined toward the interior of the exhaust gas recovery chamber (120); the second bending wall (150) includes a second bending section (151) and a second inclined section (152), the second bending section (151) is located on the periphery of the first bending section (141), the second inclined section (152) is located on the periphery of the first inclined section (142), the second inclined section (152) is connected to the second bending section (151), and gradually inclined toward the interior of the exhaust gas recovery chamber (120); a steam injection section (160) is formed between the first inclined section (142) and the second inclined section (152), and the end of the steam injection section (160) is the steam injection port (111).

6. The silicon wafer electroplating pre-treatment equipment according to claim 5, characterized in that: The cross-sectional size of the steam injection section (160) gradually decreases along the fluid flow direction.

7. The silicon wafer electroplating pre-treatment equipment according to claim 5, characterized in that: The hydrofluorine corrosion component (100) further includes a third bending wall (170), the second bending wall (150) is located between the first bending wall (140) and the third bending wall (170); the protective gas chamber (130) is formed between the second bending wall (150) and the third bending wall (170).

8. The silicon wafer electroplating pre-treatment equipment according to claim 7, characterized in that: The third bending wall (170) includes a third bending section (171) and a third inclined section (172), wherein the third bending section (171) is located on the periphery of the second bending section (151), and the third inclined section (172) is located on the periphery of the second inclined section (152), and the third inclined section (172) is connected to the third bending section (171) and gradually inclines toward the interior of the exhaust gas recovery chamber (120); an air outlet section (180) is formed between the third inclined section (172) and the second inclined section (152), and the end of the air outlet section (180) is the air outlet (131).

9. The silicon wafer electroplating pretreatment equipment according to any one of claims 1 to 8, characterized in that: At least one group of the hydrogen-fluorine etching components (100) is provided; two hydrogen-fluorine etching components (100) are provided in each group, and the two hydrogen-fluorine etching components (100) in the same group are arranged opposite to each other; when multiple groups of the hydrogen-fluorine etching components (100) are provided, the multiple groups of the hydrogen-fluorine etching components (100) are arranged at intervals along the transmission direction (a) of the silicon wafer.

10. The silicon wafer electroplating pre-treatment equipment according to claim 9, characterized in that: The silicon wafer electroplating pre-treatment equipment further comprises a circulation system, wherein the circulation system is in communication with the hydrofluoric acid mist chamber (110); The circulation system comprises a hydrofluoric acid barrel (210), a pump body (220) and a first connecting pipeline (230); The hydrofluoric acid barrel (210) is used to contain hydrofluoric acid liquid and comprises an air inlet pipe (211), one end of the air inlet pipe (211) extends into the liquid surface of the hydrofluoric acid liquid, and the other end is connected to the input end of the first connecting pipe (230); The output end of the first connecting pipeline (230) is in communication with the hydrofluoric acid mist chamber (110), and the pump body (220) is installed on the first connecting pipeline (230). The first connecting pipeline (230) is equipped with a regulating valve (240).

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