Chemical vapor deposition device

Abstract

The utility model belongs to the technical field of display device manufacturing, and discloses a chemical vapor deposition device, which comprises a cavity, a mounting rack, an upper electrode, a lower electrode and an insulating pad, the cavity is arranged on the ground through the mounting rack, a deposition cavity is arranged in the cavity, the upper electrode and the lower electrode are arranged in the deposition cavity at intervals along the vertical direction, the upper electrode is connected with a radio frequency power supply, and the lower electrode is connected with the insulating pad. The lower electrode is grounded and is used for supporting a to-be-plated workpiece; and the insulating pad is at least arranged on the peripheral cavity wall of the deposition cavity along the horizontal direction in a coating manner. The peripheral cavity wall of the deposition cavity is coated with the insulating pad, so that plasma can be prevented from being adhered to the peripheral cavity wall of the deposition cavity to form a thin film, the electric conductivity of the peripheral cavity wall of the deposition cavity is ensured, and the flow direction of the plasma in the deposition cavity tends to be balanced, so that the deposition rate of a coating film of a workpiece to be coated is more stable, and the coating quality of the workpiece to be coated is improved. And the compactness, uniformity and thickness precision of the coating film are effectively improved, and the coating film quality of the workpiece to be coated is guaranteed.

Description

Technical Field

[0001] The utility model relates to the technical field of display device manufacturing, in particular to a chemical vapor deposition device. Background Art

[0002] With the development of semiconductor technology, the development and use of Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment has become increasingly widespread. This equipment uses two parallel and opposite electrode plates placed in a vacuum environment. At a certain temperature, one of the electrode plates is connected to a radio frequency (RF) power supply, and the other electrode plate is grounded. A radio frequency electric field is generated between the two electrode plates, and the substrate to be film-formed is placed between the two electrode plates. The film-forming process gas enters between the two electrode plates and is excited to become plasma under the action of the radio frequency electric field. The plasma is adsorbed on the surface of the substrate or reacts with the surface of the substrate to form a thin film on the surface of the substrate. Factors such as the plasma flow direction, gas flow, radio frequency electric field power, and process temperature may have a significant impact on the quality of the final film.

[0003] Reference Figure 1 As shown, an existing chemical vapor deposition device includes a chamber 1′, an upper electrode 2′, a lower electrode 3′ and a frame 4′. The chamber 1′ is installed to the ground through the frame 4′. A reaction chamber 11′ for accommodating a glass substrate 5′ is provided in the chamber 1′. The upper electrode 2′ and the lower electrode 3′ are spaced apart in the reaction chamber 11′. The glass substrate 5′ is placed on the lower electrode 3′. The upper electrode 2′ is fixed on the chamber 1′. The upper electrode 2′ is connected to the external process gas to be film-formed and the plasma after the process gas to be film-formed is ionized is diffused into the reaction chamber 11′ to coat the glass substrate 5′.

[0004] The existing technology has the following deficiencies: the plasma diffused from the upper electrode 2′ not only adheres to the glass substrate 5′ of the grounded lower electrode 3′, but also sputters to the side wall of the reaction chamber 11′ to form a derivative film 6′. With the mass production of the glass substrate 5′, the thickness of the derivative film 6′ on the side wall of the reaction chamber 11′ increases, resulting in a gradual decrease in the conductivity of the side wall of the reaction chamber 11′, which reduces the amount of charge flowing to the grounded cavity 1′, thereby concentrating the plasma on the glass substrate 5′ flowing to the lower electrode 3′, accelerating the deposition rate of the coating. However, if the deposition rate is too fast, it is easy for the subsequent flowing plasma to cover the microcrystals formed by the previously adhered plasma but not completely migrated to various parts of the surface of the glass substrate 5′, forming a loose and porous film, which affects the coating quality of the glass substrate 5′. In addition, changes in the plasma flow direction are also likely to affect the uniformity and thickness accuracy of the coating. Utility Model Content

[0005] The purpose of the utility model is to provide a chemical vapor deposition device with a simple structure. The setting of the insulating pad can effectively prevent plasma from forming a thin film on the peripheral side wall of the deposition chamber, thereby ensuring the conductivity of the peripheral side wall of the deposition chamber.

[0006] To achieve this purpose, the present invention adopts the following technical solutions:

[0007] A chemical vapor deposition device is provided, comprising a chamber, a mounting frame, an upper electrode, a lower electrode and an insulating pad. The chamber is set on the ground through the mounting frame, a deposition chamber is provided in the chamber, the upper electrode and the lower electrode are arranged in the deposition chamber with intervals along the vertical direction, the upper electrode is connected to a radio frequency power supply, the lower electrode is grounded and is used to support a workpiece to be plated, and the insulating pad is at least covered on the lateral cavity wall of the deposition chamber along the horizontal direction.

[0008] As a preferred solution for the chemical vapor deposition device, the insulating pad is surrounded by multiple insulating blocks, and one side of the two adjacent side surfaces of two adjacent insulating blocks is protruding with a plug-in portion, and the plug-in portion extends in a vertical direction, and the other side is recessed with a plug-in groove relative to the plug-in portion, and the plug-in portion is plugged into the plug-in groove.

[0009] As a preferred solution of the chemical vapor deposition device, the circumferential cavity wall includes two first cavity walls spaced apart along the first direction and two second cavity walls spaced apart along the second direction, the insulating pad includes four insulating blocks, and the insulating block includes a first insulating portion and a second insulating portion arranged at an angle, the first insulating portion and the second insulating portion of each insulating block respectively abut against adjacent first cavity wall and second cavity wall, and the first direction is arranged at an angle to the second direction.

[0010] As a preferred solution of the chemical vapor deposition device, it further includes a sealing gasket, which is sandwiched between the insulating gasket and the peripheral cavity wall.

[0011] As a preferred solution of the chemical vapor deposition device, the insulating pad is detachably connected to the peripheral cavity wall.

[0012] As a preferred solution of the chemical vapor deposition device, one of the insulating pad and the peripheral cavity wall is provided with a protruding clamping portion, and the other is provided with a recessed clamping groove, and the clamping portion is clamped in the clamping groove.

[0013] As a preferred solution of the chemical vapor deposition device, it also includes an insulating connector, the insulating pad is penetrated by a through hole, the peripheral cavity wall is recessed with a first threaded hole, and the insulating connector passes through the through hole and is screwed into the first threaded hole.

[0014] As a preferred solution of the chemical vapor deposition device, it also includes multiple grounding wires and insulating sleeves. The bottom of the lower electrode is connected to multiple grounding wires at intervals. The end of the grounding wire away from the lower electrode is connected to the bottom of the deposition chamber, and the outer periphery of the grounding wire is provided with the insulating sleeve.

[0015] As a preferred solution of the chemical vapor deposition device, it also includes an insulating mounting seat and a fastener, the lower electrode and the bottom of the deposition chamber are detachably connected to the insulating mounting seat, the insulating mounting seat has a first side surface and a second side surface arranged at an angle to the first side surface, the first side surface is provided with a mounting groove, and one end of the mounting groove passes through the second side surface to form a mounting opening, the end of the grounding wire is inserted into the mounting groove along the mounting opening, and part of the insulating sleeve is located in the mounting groove, and a second threaded hole communicating with the mounting groove is provided on the side of the insulating mounting seat away from the first side surface, and the fastener is screwed through the second threaded hole to connect the grounding wire to the lower electrode or the bottom of the deposition chamber.

[0016] As a preferred solution of the chemical vapor deposition device, the first side surface is protrudingly provided with a positioning portion, and the lower electrode and the bottom of the deposition chamber are respectively provided with positioning grooves, and the positioning portion can be inserted into the positioning grooves.

[0017] The beneficial effects of the present invention are as follows: by covering the circumferential wall of the deposition chamber with an insulating pad, the plasma can be prevented from adhering to the circumferential wall of the deposition chamber to form a thin film, thereby ensuring the conductivity of the circumferential wall of the deposition chamber and making the flow direction of the plasma in the deposition chamber tend to be balanced, thereby making the deposition rate of the coating on the workpiece to be plated more stable, effectively improving the density, uniformity and thickness accuracy of the coating, and ensuring the coating quality of the workpiece to be plated; and the provision of the insulating pad can reduce the temperature in the deposition chamber from being lost through the cavity, and the insulating pad can also absorb part of the temperature to achieve a heat preservation effect, thereby ensuring the stability of the production environment in the deposition chamber, reducing heat power consumption, and saving energy. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The present invention will be described in further detail below with reference to the accompanying drawings and embodiments.

[0019] Figure 1 It is a structural schematic diagram of an existing chemical vapor deposition device;

[0020] Figure 2 It is a structural schematic diagram of a chemical vapor deposition device according to an embodiment of the present utility model;

[0021] Figure 3 yes Figure 2 An enlarged schematic diagram of point A;

[0022] Figure 4This is a schematic diagram of the coordination of the cavity, insulating pad and sealing pad in an embodiment of the present utility model;

[0023] Figure 5 yes Figure 4 An enlarged schematic diagram of point B;

[0024] Figure 6 It is a structural schematic diagram of the insulating mounting base of an embodiment of the utility model.

[0025] Figure 1 middle:

[0026] 1′, cavity; 11′, reaction chamber; 2′, upper electrode; 3′, lower electrode; 4′, frame; 5′, glass substrate; 6′, derivative film.

[0027] Figures 2 to 6 middle:

[0028] 100. Workpiece to be plated;

[0029] 1. Cavity; 11. Deposition chamber; 12. Peripheral cavity wall; 121. First cavity wall; 122. Second cavity wall; 13. Cavity bottom; 2. Mounting frame; 3. Upper electrode; 4. Lower electrode; 5. Insulating pad; 51. Insulating block; 511. Plug-in portion; 512. Plug-in slot; 513. First insulating portion; 514. Second insulating portion; 6. Sealing pad; 7. Grounding wire; 8. Insulating sleeve; 9. Mounting seat; 91. First side surface; 92. Second side surface; 93. Mounting slot; 94. Mounting port; 95. Second threaded hole; 96. Positioning portion; 10. Fastener. DETAILED DESCRIPTION

[0030] The advantages and features of the present invention and methods for achieving them will become apparent with reference to the embodiments described in detail below in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in a variety of different forms. These embodiments are provided merely to complete the disclosure of the present invention and enable those skilled in the art to fully understand the scope of the present invention. The present invention is limited only by the scope of the claims. The same reference numerals represent the same components throughout the specification.

[0031] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

[0032] like Figures 2 to 6As shown, the chemical vapor deposition device of an embodiment of the present invention includes a chamber 1, a mounting frame 2, an upper electrode 3, a lower electrode 4 and an insulating pad 5. The chamber 1 is set on the ground through the mounting frame 2. A deposition chamber 11 is set in the chamber 1. The upper electrode 3 and the lower electrode 4 are arranged in the deposition chamber 11 at intervals along the vertical direction (the vertical direction is the Z direction shown in the figure). The upper electrode 3 is connected to the radio frequency power supply, the lower electrode 4 is grounded and used to support the workpiece 100 to be plated, and the insulating pad 5 is at least covered on the lateral cavity wall 12 of the deposition chamber 11 along the horizontal direction.

[0033] It can be understood that by covering the insulating pad 5 on the circumferential wall 12 of the deposition chamber 11, it is possible to prevent the plasma from adhering to the circumferential wall 12 of the deposition chamber 11 to form a thin film, thereby ensuring the conductivity of the circumferential wall 12 of the deposition chamber 11, and making the flow direction of the plasma in the deposition chamber 11 tend to be balanced, thereby making the deposition rate of the coating on the workpiece to be plated more stable, effectively improving the density, uniformity and thickness accuracy of the coating, that is, not only ensuring that the deposited microcrystals of the plasma on a single workpiece to be plated gradually migrate to various places on the surface of the workpiece to be plated and then gradually stacked, so that the density of the coating on the workpiece to be plated can be guaranteed. , the flow of plasma toward various locations on a single workpiece to be plated is also more stable, thereby ensuring the uniformity and thickness accuracy of the coating on a single workpiece to be plated. In addition, the stability of the electrical conductivity of the circumferential wall 12 of the deposition chamber 11 can improve the uniformity and thickness accuracy of the coating on each workpiece to be plated during mass production, thereby ensuring the coating quality of the workpiece to be plated; and the setting of the insulating pad 5 can reduce the temperature in the deposition chamber 11 from being lost through the cavity 1, and the insulating pad 5 can also absorb part of the temperature to achieve a heat preservation effect, thereby ensuring the stability of the production environment in the deposition chamber 11, reducing heat power consumption, and saving energy.

[0034] It should be noted that the cavity 1 is grounded through the mounting frame 2, and the peripheral wall 12 of the deposition cavity 11 has a similar effect to the lower electrode 4. The plasma in the deposition cavity 11 will gradually adhere to the insulating pad 5 to form a thin film, and the thin film on the insulating pad 5 does not affect the conductivity of the peripheral wall 12 of the deposition cavity 11. Therefore, the plasma flow direction in the deposition cavity 11 is not affected by the increasingly thick film on the insulating pad 5, and the plasma flow direction is stable. After the glass substrates are mass-produced to a certain number (for example, 40 pieces), the thin films in various locations in the deposition cavity 11 are etched to ensure a good production environment in the deposition cavity 11. Compared with the traditional chemical vapor deposition device that needs to be frequently cleaned due to the conductivity of the peripheral wall 12, the cleaning interval of the deposition cavity 11 can be increased.

[0035] Alternatively, as Figure 4 and Figure 5As shown, the insulating pad 5 is formed by enclosing a plurality of insulating blocks 51. One of the two adjacent side surfaces of two adjacent insulating blocks 51 is provided with a protruding plug-in portion 511, which extends in the vertical direction. The other side is provided with a recessed plug-in slot 512 relative to the plug-in portion 511, and the plug-in portion 511 is plugged into the plug-in slot 512. By splitting the insulating pad 5 into a plurality of insulating blocks 51 and then assembling them, that is, splitting a large integral part into a plurality of small parts for production and then assembling them, the production convenience of the insulating pad 5 can be effectively improved and the production cost of the insulating pad 5 can be reduced. By plugging the plug-in portion 511 into the plug-in slot 512, the contact area of ​​the connecting surface between the two adjacent insulating blocks 51 is effectively increased, the connection sealing between the insulating blocks 51 is improved, and the plasma is prevented from passing through the insulating blocks 51 and forming a thin film on the surrounding side wall of the deposition chamber 11.

[0036] Furthermore, the circumferential cavity wall 12 includes two first cavity walls 121 spaced apart along a first direction and two second cavity walls 122 spaced apart along a second direction (the first direction is the X direction in the figure, and the second direction is the Y direction in the figure). The insulating pad 5 includes four insulating blocks 51. The insulating blocks 51 include first insulating portions 513 and second insulating portions 514 arranged at an angle. The first insulating portion 513 and the second insulating portion 514 of each insulating block 51 respectively abut against adjacent first cavity walls 121 and second cavity walls 122, and the first direction and the second direction are arranged at an angle. By providing the insulating blocks 51 at an angle to adapt to the circumferential cavity wall 12 at an angle, the structural stability of the insulating blocks 51 at the angled position of the circumferential cavity wall 12 is improved. For example, the plug-in portion 511 is arranged on the side of the first insulating portion 513 facing the second insulating portion 514, and the second insulating portion 514 is provided with a plug-in groove 512 on the side facing the first insulating portion 513. The first insulating portion 513 and the second insulating portion 514 of the four insulating blocks 51 are connected in sequence to enclose and form an insulating pad 5 that is covered on the peripheral cavity wall 12 of the deposition cavity 11.

[0037] Furthermore, if Figure 2 、 Figure 4 and Figure 5 As shown, the chemical vapor deposition apparatus further includes a sealing gasket 6, which is sandwiched between the insulating gasket 5 and the peripheral cavity wall 12. The provision of the sealing gasket 6 prevents plasma from penetrating from between the insulating gasket 5 and the peripheral cavity wall 12 onto the peripheral cavity wall 12, effectively strengthening the sealing between the insulating gasket 5 and the peripheral cavity wall 12, thereby ensuring the conductivity of the peripheral cavity wall 12.

[0038] In some embodiments, the insulating pad 5 is detachably connected to the peripheral cavity wall 12 to facilitate disassembly, assembly, maintenance and replacement of the insulating pad 5 .

[0039] For example, the insulating pad 5 is provided with a protruding clamping portion, and the peripheral cavity wall 12 is provided with a recessed clamping groove. The clamping portion is clamped into the clamping groove, and the insulating pad 5 and the peripheral cavity wall 12 are connected by clamping, and the connection is convenient and stable. It is worth noting that in order to ensure the connection strength of the insulating pad 5, a plurality of clamping portions are provided at least on the side of the insulating pad 5 facing the peripheral cavity wall 12 and at intervals along the circumference. In addition, in addition to providing the clamping portion on the insulating pad 5 and providing the clamping groove on the peripheral cavity wall 12, the clamping portion can also be provided on the peripheral cavity wall 12, and the clamping groove can be provided on the side of the insulating pad 5 facing the peripheral cavity wall 12.

[0040] Optionally, the chemical vapor deposition apparatus further includes an insulating connector, wherein a through-hole is provided through the insulating pad 5, and a first threaded hole is provided in a recessed manner on the circumferential cavity wall 12, and the insulating connector passes through the through-hole and is screwed into the first threaded hole. The insulating connector is, for example, an insulating bolt, which is used to fix the insulating pad 5 to the circumferential cavity wall 12. The bolt connection is stable and easy to assemble and disassemble. In addition, in other embodiments, the fixed connection can also be achieved by gluing or other means, which will not be described in detail here.

[0041] In other embodiments, Figure 2 and Figure 3 As shown, the chemical vapor deposition device also includes a plurality of grounding wires 7 and an insulating sleeve 8. A plurality of grounding wires 7 are connected to the bottom of the lower electrode 4 at intervals. The end of the grounding wire 7 away from the lower electrode 4 is connected to the cavity bottom 13 of the deposition chamber 11, and the outer periphery of the grounding wire 7 is provided with an insulating sleeve 8. By providing a plurality of grounding wires 7, it can be effectively ensured that the lower electrode 4 can be connected to the cavity 1 to achieve grounding, thereby improving the charge transfer ability of the lower electrode 4. As known from the skin effect, electrons mainly flow along the surface of the conductor. Therefore, by providing an insulating sleeve 8 on the outer periphery of the grounding wire 7, it can be prevented that the plasma adheres to the surface of the grounding wire 7 and affects the conductivity of the grounding wire 7, thereby ensuring the grounding effect of the grounding wire 7. In addition, the use of the insulating sleeve 8 can enhance the protection of the grounding wire 7, improve the durability of the grounding wire 7, extend the service life of the grounding wire 7, and reduce maintenance costs.

[0042] Further, if Figure 2 and Figure 3 As shown, the chemical vapor deposition device also includes an insulating mounting seat 9 and a fastener 10. The lower electrode 4 and the cavity bottom 13 of the deposition chamber 11 are respectively detachably connected to the insulating mounting seat 9. For example, a mounting through hole is provided on the insulating mounting seat 9, and mounting threaded holes are respectively provided on the lower electrode 4 and the cavity bottom 13 of the deposition chamber 11. Insulating bolts are passed through the mounting through holes and screwed onto the mounting threaded holes to respectively install the two mounting seats 9 on the lower electrode 4 and the cavity bottom 13 of the deposition chamber 11, thereby realizing the installation of both ends of the grounding wire 7.

[0043] In addition, if Figure 6As shown, the insulating mounting seat 9 has a first side surface 91 and a second side surface 92 arranged at an angle to the first side surface 91. The first side surface 91 is a mounting surface that abuts the lower electrode 4 or the cavity bottom 13 of the deposition chamber 11. The first side surface 91 is provided with a mounting groove 93, and one end of the mounting groove 93 passes through the second side surface 92 to form a mounting opening 94. The end of the grounding wire 7 is inserted into the mounting groove 93 along the mounting opening 94, and a portion of the insulating sleeve 8 is located in the mounting groove 93. A second threaded hole 95 communicating with the mounting groove 93 is formed on the side of the insulating mounting seat 9 away from the first side surface 91. The fastener 10 is screwed through the second threaded hole 95 to abut the grounding wire 7 against the cavity bottom 13 of the lower electrode 4 or the deposition chamber 11. The provision of the mounting seat 9 can improve the protection of the end of the grounding wire, preventing the end of the grounding wire from being adhered by plasma and forming a thin film that affects the conductivity of the grounding wire 7. Of course, the fastener 10 can be a bolt, and the grounding wire 7 can be tightly installed by adjusting the bolt through the second threaded hole 95 on the mounting base 9, thereby improving the convenience of disassembly and subsequent maintenance of the grounding wire 7.

[0044] Furthermore, a positioning portion 96 is protruding from the first side surface 91, and positioning grooves are respectively provided on the lower electrode 4 and the bottom 13 of the deposition chamber 11. The positioning portion 96 can be inserted into the positioning groove. The cooperation between the positioning portion 96 and the positioning groove can effectively improve the installation accuracy and convenience of the insulating mounting seat 9.

[0045] Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the above embodiments, but can be manufactured in various forms, and those skilled in the art will understand that the present invention can be implemented in other specific forms without changing the technical spirit or basic features of the present invention. Therefore, it should be understood that the above embodiments are illustrative and not restrictive in all aspects.

Claims

1. A chemical vapor deposition device, characterized in that: The device comprises a cavity, a mounting frame, an upper electrode, a lower electrode and an insulating pad. The cavity is set on the ground through the mounting frame. A deposition chamber is set in the cavity. The upper electrode and the lower electrode are arranged in the deposition chamber with intervals along the vertical direction. The upper electrode is connected to the radio frequency power supply, and the lower electrode is grounded and used to support the workpiece to be plated. The insulating pad is at least covered on the lateral cavity wall of the deposition chamber along the horizontal direction.

2. The chemical vapor deposition apparatus according to claim 1, wherein: The insulating pad is surrounded by multiple insulating blocks. One side of the two adjacent side surfaces of two adjacent insulating blocks is protruding with a plug-in portion, and the plug-in portion extends in a vertical direction. The other side is recessed relative to the plug-in portion and is provided with a plug-in groove, and the plug-in portion is plugged into the plug-in groove.

3. The chemical vapor deposition apparatus according to claim 2, wherein: The circumferential cavity wall includes two first cavity walls spaced apart along a first direction and two second cavity walls spaced apart along a second direction. The insulating pad includes four insulating blocks. The insulating blocks include a first insulating portion and a second insulating portion arranged at an angle. The first insulating portion and the second insulating portion of each insulating block are respectively abutted against adjacent first cavity walls and second cavity walls, and the first direction is arranged at an angle to the second direction.

4. The chemical vapor deposition apparatus according to claim 1, wherein: It also includes a sealing gasket, which is sandwiched between the insulating gasket and the peripheral cavity wall.

5. The chemical vapor deposition apparatus according to any one of claims 1 to 4, characterized in that: The insulating pad is detachably connected to the peripheral cavity wall.

6. The chemical vapor deposition apparatus according to claim 5, characterized in that: One of the insulating pad and the peripheral cavity wall is provided with a protruding clamping portion, and the other is provided with a recessed clamping groove, and the clamping portion is clamped in the clamping groove.

7. The chemical vapor deposition apparatus according to claim 5, wherein: It also includes an insulating connector, the insulating pad is provided with a through hole, the peripheral cavity wall is recessed with a first threaded hole, and the insulating connector passes through the through hole and is screwed into the first threaded hole.

8. The chemical vapor deposition apparatus according to any one of claims 1 to 4, characterized in that: It also includes multiple grounding wires and insulating sleeves. The bottom of the lower electrode is connected to multiple grounding wires at intervals. One end of the grounding wire away from the lower electrode is connected to the bottom of the deposition chamber, and the outer periphery of the grounding wire is provided with the insulating sleeve.

9. The chemical vapor deposition apparatus according to claim 8, wherein: It also includes an insulating mounting seat and a fastener, the lower electrode and the bottom of the deposition chamber are respectively detachably connected to the insulating mounting seat, the insulating mounting seat has a first side surface and a second side surface set at an angle to the first side surface, the first side surface is provided with a mounting groove, and one end of the mounting groove passes through the second side surface to form a mounting opening, the end of the grounding wire is inserted into the mounting groove along the mounting opening, and part of the insulating sleeve is located in the mounting groove, and a second threaded hole communicating with the mounting groove is provided on the side of the insulating mounting seat away from the first side surface, and the fastener is screwed through the second threaded hole to connect the grounding wire to the lower electrode or the bottom of the deposition chamber.

10. The chemical vapor deposition apparatus according to claim 9, wherein: A positioning portion is protruding from the first side surface, and positioning grooves are respectively provided on the bottom of the lower electrode and the deposition cavity, and the positioning portion can be inserted into the positioning grooves.

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