Electron beam detection device

Abstract

The utility model relates to an electron beam detection device which comprises a wafer carrying table, a temperature sensor, a controller, a temperature control module and an electron gun. The wafer carrying table is used for carrying a wafer to be tested; the temperature sensor is located on the wafer carrying table and used for detecting temperature information of the wafer carrying table; the controller is connected with the temperature sensor and is used for receiving the temperature information and generating a heating instruction or a refrigerating instruction according to the test requirement and the temperature information; the temperature control module is connected with the controller and is used for heating the wafer carrying table according to the heating instruction and cooling the wafer carrying table according to the refrigeration instruction; the electron gun is used for emitting electron beams to the to-be-tested wafer so as to test the to-be-tested wafer. According to the invention, on the premise of ensuring that the wafer is not damaged, temperature control is carried out on the wafer carrying table to simulate different temperature environments and carry out wafer testing in different temperature environments, so that on-line testing is carried out on electrical defects of the wafer to be tested in a stress environment, and the wafer testing efficiency and the wafer product yield are improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor testing, and in particular to an electron beam detection device. Background Art

[0002] In the semiconductor testing field, electron beam inspection (EBI) equipment is primarily used to perform in-line testing of semiconductor devices for electrical defects. With the advancement of semiconductor technology, the application environments of semiconductor chips have become increasingly complex, often requiring them to operate in extreme high and low temperature environments. Minor defects in the wafer (such as film quality issues) can cause the wafer to function normally at room temperature but fail at low or high temperatures.

[0003] However, electron beam testing in related technologies can only test for electrical defects at room temperature, while testing for high or low temperature environments requires post-wafer production. Consequently, it's impossible to monitor both high and low temperature electrical defects during the wafer R&D phase, leading to a large number of defective wafers during mass production, severely impacting wafer yield. Utility Model Content

[0004] Based on this, an embodiment of the present application provides an electron beam detection device, which controls the temperature of the wafer carrier to simulate different temperature environments and performs wafer testing under different temperature environments, thereby improving the test efficiency of the wafer test and the wafer product yield.

[0005] To achieve the above-mentioned objectives, some embodiments of the present application provide an electron beam detection device. The electron beam detection device includes a wafer carrier, a temperature sensor, a controller, a temperature control module, and an electron gun. The wafer carrier is used to carry the wafer to be tested; the temperature sensor is located on the wafer carrier; the temperature sensor is used to detect the temperature information of the wafer carrier; the controller is connected to the temperature sensor; the controller is used to receive the temperature information and generate a heating instruction or a cooling instruction based on the test requirements and the temperature information; the temperature control module is connected to the controller; the temperature control module is used to heat the wafer carrier according to the heating instruction; and, cool the wafer carrier according to the cooling instruction; the electron gun is used to emit an electron beam to the wafer to be tested so as to test the wafer to be tested.

[0006] In some embodiments, the test of the wafer to be tested includes a first test and a second test; the heating instruction includes a heating start instruction and a heating stop instruction, and the cooling instruction includes a cooling start instruction and a cooling stop instruction; the controller is also used to generate a heating start instruction when the temperature of the wafer carrier is lower than the first target temperature during the first test of the wafer to be tested, and generate a heating stop instruction when the temperature of the wafer carrier reaches the first target temperature; and to generate a cooling start instruction when the temperature of the wafer carrier is higher than the second target temperature during the second test of the wafer to be tested, and generate a cooling stop instruction when the temperature of the wafer carrier reaches the second target temperature; wherein the first target temperature is greater than the second target temperature.

[0007] In some embodiments, the controller is also used to output a first test instruction after generating a heating stop instruction, and to output a second test instruction after generating a cooling stop instruction; the electron gun is coupled to the controller; the electron gun is also used to emit an electron beam to the wafer to be tested according to the first test instruction to perform a first test on the wafer to be tested; and, to emit an electron beam to the wafer to be tested according to the second test instruction to perform a second test on the wafer to be tested.

[0008] In some embodiments, the temperature control module includes a heater and a refrigerator; the heater is used to heat the wafer carrier according to a heating instruction; and the refrigerator is used to cool the wafer carrier according to a cooling instruction.

[0009] In some embodiments, the wafer stage is located in a process chamber; the heater includes a radiation heater; the radiation heater is located at the top of the process chamber; and the radiation heater is used to heat the wafer stage according to a heating instruction.

[0010] In some embodiments, the heater includes a heating coil; the heating coil is located at the bottom of the wafer stage; and the heating coil is used to heat the wafer stage according to the heating instruction.

[0011] In some embodiments, the heater includes a heating pipe located at the bottom of the wafer carrier, and a heating medium flowing into the heating pipe according to a heating instruction.

[0012] In some embodiments, the refrigerator includes a cooling pipe located at the bottom of the wafer carrier, and a cooling medium flowing into the cooling pipe according to a cooling instruction.

[0013] In some embodiments, the electron beam detection device further includes a heat insulator; the heat insulator is located at the bottom of the temperature control module; the heat insulator is used to keep the temperature of the temperature control module stable during the testing process of the wafer to be tested.

[0014] In some embodiments, the wafer carrier is located in the process chamber; the temperature control module includes a liquid pipeline, a gas pipeline, a first heat conduction path, a second heat conduction path, an expansion valve and a compressor; the liquid pipeline has a liquid medium flowing therein; the gas pipeline has a gas medium flowing therein; the first heat conduction path is located in the process chamber; the first heat conduction path connects the liquid pipeline and the gas pipeline; the first heat conduction path is used to dissipate heat to the process chamber according to a heating instruction, so that the gas medium condenses into a liquid medium; and, according to a cooling instruction, absorb heat in the process chamber, so that the liquid medium evaporates into a gas medium; the second heat conduction path is located outside the process chamber; the second heat conduction path connects the liquid pipeline and the gas pipeline; the second heat conduction path is used to absorb external heat according to a heating instruction, so that the liquid medium evaporates into a gas medium; and, according to a cooling instruction, dissipate heat to the external environment, so that the gas medium condenses into a liquid medium; the expansion valve is located on the liquid pipeline between the first heat conduction path and the second heat conduction path; the expansion valve is used to cool and reduce the pressure of the liquid medium; the compressor is located on the gas pipeline between the first heat conduction path and the second heat conduction path; the compressor is used to pressurize the gas medium.

[0015] The embodiments of the present application may or at least have the following advantages:

[0016] In an embodiment of the present application, a temperature sensor located on the wafer stage is used to detect the temperature information of the wafer stage in real time, and a temperature control module is used to adjust the temperature of the wafer stage according to the heating and cooling instructions issued by the controller, so that the wafer to be tested is placed in different temperature environments (for example, a high temperature environment and a low temperature environment), and an electron beam is emitted to the wafer to be tested through an electron gun to perform electrical defect detection on the wafer to be tested under different temperature environments. In this way, device failure problems of the wafer to be tested can be discovered in time, thereby improving wafer testing efficiency and wafer product yield. In addition, by placing the wafer to be tested in different temperature environments for testing through the temperature control module, device failure problems caused by minor defects (such as film quality problems) can also be characterized, thereby improving the accuracy of wafer testing.

[0017] The details of one or more embodiments of the present application are set forth in the following drawings and description. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0019] Figure 1is a schematic structural diagram of an electron beam detection device provided in some embodiments;

[0020] Figure 2 is a schematic structural diagram of another electron beam detection device provided in some embodiments;

[0021] Figure 3 is a schematic structural diagram of a heating coil provided in some embodiments;

[0022] Figure 4 A schematic structural diagram of a heating pipeline or a cooling pipeline provided in some embodiments;

[0023] Figure 5 This is a schematic structural diagram of another electron beam detection device provided in some embodiments.

[0024] Description of reference numerals:

[0025] 1-wafer stage, W-wafer to be tested, 2-temperature sensor, C-controller, TC-temperature control module, E-electron gun, 3-heater, 31-radiation heater, 32-heating coil, 33-heating pipeline, 4-refrigerator, 41-cooling pipeline, 51-liquid pipeline, 52-gas pipeline, 53-first heat conduction path, 54-second heat conduction path, 55-expansion valve, 56-compressor, 6-process chamber, S-power supply. DETAILED DESCRIPTION

[0026] To facilitate understanding of the present application, a more comprehensive description of the present application will be provided below with reference to the accompanying drawings. The drawings illustrate preferred embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the present disclosure.

[0027] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0028] It should be understood that when an element or layer is referred to as being "on," "adjacent to," or "connected to" another element or layer, it may be directly on, adjacent to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types, and / or portions, these elements, components, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, doping type, or portion from another element, component, region, layer, doping type, or portion. Thus, a first element, component, region, layer, doping type, or portion discussed below may be represented as a second element, component, region, layer, or portion without departing from the teachings of the present application.

[0029] As used herein, the singular forms "a," "an," and "the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "comprising" and / or "including" are used in this specification, they may specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. At the same time, when used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0030] While embodiments of the present invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the present invention, variations from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are to be expected. Embodiments of the present invention should not be limited to the specific shapes of regions illustrated herein, but rather include deviations in shapes due to, for example, manufacturing techniques. Therefore, the regions shown in the figures are schematic in nature, and their shapes do not represent the actual shapes of regions of a device and do not limit the scope of the present invention.

[0031] An embodiment of the present application provides an electron beam detection device, which is beneficial for simulating different temperature environments by controlling the temperature of the wafer carrier and performing wafer tests under different temperature environments while ensuring that the wafer is not damaged, thereby performing online testing of electrical defects in the wafer to be tested under a stress environment, thereby improving the test efficiency of the online wafer test and the wafer product yield.

[0032] In some embodiments, see Figure 1The electron beam testing device includes a wafer stage 1, a temperature sensor 2, a controller C, a temperature control module TC, and an electron gun E. The wafer stage 1 is used to support a wafer W to be tested. The temperature sensor 2 is located on the wafer stage 1 and is used to detect the temperature of the wafer stage 1. The controller C is connected to the temperature sensor 2 and is used to receive the temperature information and generate a heating instruction or a cooling instruction based on the test requirements and the temperature information. The temperature control module TC is connected to the controller C and is used to heat the wafer stage 1 according to the heating instruction and cool the wafer stage 1 according to the cooling instruction. The electron gun E is used to emit an electron beam toward the wafer W to be tested for testing.

[0033] In some examples, the material of the wafer stage 1 includes a thermally conductive material.

[0034] It should be noted that, in the embodiment of the present application, the temperature of the wafer carrier 1 is detected and controlled, and the temperature of the wafer W to be tested is detected and controlled through heat transfer between the wafer carrier 1 and the wafer W to be tested.

[0035] For example, the wafer stage 1 includes an electrostatic chuck (ESC, E-chuck) for fixing the wafer W to be tested.

[0036] Please refer to Figure 1 , the temperature sensors 2 can be distributed around the wafer carrier 1; the number of temperature sensors 2 can be one or more, and the multiple temperature sensors 2 are evenly distributed on the wafer carrier 1 to accurately detect the temperature information at various locations on the wafer carrier 1.

[0037] For example, the temperature sensor 2 includes, but is not limited to, a thermocouple, a resistance temperature detector (RTD), a thermal resistor, an infrared thermometer, a silicon diode, or an optical fiber temperature sensor 2 .

[0038] In some examples, the test requirements include testing device failure issues of the wafer W to be tested in a high-temperature environment, testing device failure issues of the wafer W to be tested in a low-temperature environment, and the like.

[0039] In the embodiment of the present application, the temperature information of the wafer carrier 1 is detected in real time by a temperature sensor 2 located on the wafer carrier 1, and the temperature control module TC adjusts the temperature of the wafer carrier 1 according to the heating instructions and cooling instructions issued by the controller C, so that the wafer W to be tested is in different temperature environments (for example, a high temperature environment and a low temperature environment), and an electron beam is emitted to the wafer to be tested W through the electron gun E to perform electrical defect detection on the wafer to be tested W under different temperature environments. In this way, device failure problems can be discovered in time during the research and development and production stages of the wafer, thereby improving the wafer testing efficiency and the wafer product yield.

[0040] In addition, by controlling the temperature control module TC, the wafer W to be tested can be tested at different temperatures. This can also characterize device failures caused by minor defects (such as film quality problems), thereby improving the accuracy of wafer testing.

[0041] In some embodiments, the test of the wafer W to be tested includes a first test and a second test; the heating instruction includes a heating start instruction and a heating stop instruction, and the cooling instruction includes a cooling start instruction and a cooling stop instruction; the controller C is also used to generate a heating start instruction when the temperature of the wafer carrier 1 is lower than the first target temperature during the first test of the wafer W to be tested, and generate a heating stop instruction when the temperature of the wafer carrier 1 reaches the first target temperature; and, during the second test of the wafer W to be tested, generate a cooling start instruction when the temperature of the wafer carrier 1 is higher than the second target temperature, and generate a cooling stop instruction when the temperature of the wafer carrier 1 reaches the second target temperature; wherein the first target temperature is greater than the second target temperature.

[0042] In some examples, the first test may be, for example, a high temperature test, and the second test may be, for example, a low temperature test.

[0043] In some examples, the first target temperature is less than or equal to 185°C.

[0044] For example, the value range of the first target temperature includes 80°C to 185°C; the value of the first target temperature can be, for example, 80°C, 90°C, 100°C, 120°C, 150°C, 160°C, 180°C or 185°C.

[0045] In some examples, the second target temperature is greater than or equal to -60°C.

[0046] For example, the value range of the second target temperature includes -60°C to 0°C; the value of the second target temperature can be, for example, -60°C, -50°C, -40°C, -30°C, -20°C, -10°C or 0°C.

[0047] In the embodiment of the present application, during the first test of the wafer W to be tested, the heating instruction generated by the controller C controls the temperature control module TC to heat the wafer carrier 1, so that the heating stops after the temperature reaches the first target temperature, thereby placing the wafer W to be tested in a high-temperature environment to meet the high-temperature test requirements of the wafer test; and during the second test of the wafer W to be tested, the cooling instruction generated by the controller C controls the temperature control module TC to cool the wafer carrier 1, so that the cooling stops after the temperature reaches the second target temperature, thereby placing the wafer W to be tested in a low-temperature environment to meet the low-temperature test requirements of the wafer. In this way, the electron beam detection device realizes the detection of the wafer W to be tested at different temperatures, which can timely discover wafer device failure problems during the R&D and production stages, effectively improving the testing efficiency of the wafer and the yield rate of the wafer product.

[0048] In some embodiments, during the test process of the wafer W to be tested, the temperature of the wafer stage 1 is within a target temperature range; the target temperature range includes -60°C to 185°C.

[0049] For example, during the test of the wafer W to be tested, the temperature of the wafer carrier 1 can be, for example, -60°C, -50°C, -40°C, -30°C, -20°C, -10°C, 0°C, 10°C, 20°C, 40°C, 60°C, 80°C, 90°C, 100°C, 120°C, 150°C, 160°C, 180°C or 185°C, etc.

[0050] It should be noted that, in the embodiment of the present application, during the test process of the wafer W to be tested, the temperature sensor 2 detects the temperature information of the wafer stage 1 in real time.

[0051] In some embodiments, the controller C is also used to generate a cooling start instruction when the temperature of the wafer carrier 1 is higher than the target temperature range, and to generate a cooling stop instruction when the temperature of the wafer carrier 1 drops to within the target temperature range; and to generate a heating start instruction when the temperature of the wafer carrier 1 is lower than the target temperature range, and to generate a heating stop instruction when the temperature of the wafer carrier 1 rises to within the target temperature range.

[0052] In the embodiment of the present application, temperature sensor 2 monitors the temperature of wafer stage 1 in real time during wafer testing. When the temperature of wafer stage 1 exceeds the target temperature range, controller C promptly generates corresponding temperature adjustment instructions (including heating and cooling instructions) to adjust the temperature of wafer stage 1, thereby ensuring that the temperature of wafer stage 1 remains within the target temperature range. Thus, controller C controls the temperature of wafer stage 1 within the target temperature range, avoiding device failures caused by excessively high or low temperatures during wafer testing, thereby effectively improving the yield of wafer products.

[0053] In some embodiments, the controller C is also used to output a first test instruction after generating a heating stop instruction, and to output a second test instruction after generating a cooling stop instruction; the electron gun E is coupled to the controller C; the electron gun E is used to emit an electron beam to the wafer W to be tested according to the first test instruction to perform a first test on the wafer W to be tested; and, to emit an electron beam to the wafer W to be tested according to the second test instruction to perform a second test on the wafer W to be tested.

[0054] In the embodiment of the present application, after the temperature of the wafer stage 1 is adjusted to a first target temperature, the electron gun begins to perform a first test on the wafer W under test according to a first test instruction issued by the controller C, so that the wafer W under test undergoes the first test in a high-temperature environment. Furthermore, after the temperature of the wafer stage 1 is adjusted to a second target temperature, the electron gun begins to perform a second test on the wafer W under test according to a second test instruction issued by the controller C, so that the wafer W under test undergoes the second test in a low-temperature environment. In this manner, the wafer W under test is tested in different temperature environments (including high-temperature and low-temperature environments).

[0055] In some of the above embodiments, it should be noted that: Figure 1 In the example, the temperature control module TC is located at the bottom of the wafer carrier 1. However, it can be understood that the temperature control module TC can be set in many ways. Figures 2 to 5 And some of the following embodiments are understood.

[0056] In some embodiments, the temperature control module TC includes a heater 3 and a refrigerator 4 ; the heater 3 is used to heat the wafer carrier 1 according to a heating instruction; the refrigerator 4 is used to cool the wafer carrier 1 according to a cooling instruction.

[0057] In some embodiments, see Figure 2 , the wafer carrier 1 is located in the process chamber 6; the heater 3 includes a radiation heater 31; the radiation heater 31 is located at the top of the process chamber 6; the radiation heater 31 is used to heat the wafer carrier 1 according to the heating instruction.

[0058] For example, the radiation heater 31 is configured to emit light according to a heating start instruction to heat the wafer stage 1 , and to be extinguished according to a heating stop instruction to stop heating the wafer stage 1 .

[0059] For example, the radiation heater 31 includes, but is not limited to, an infrared heating lamp or a ceramic heating lamp.

[0060] In some embodiments, see Figure 1 and Figure 3 The heater 3 includes a heating coil 32 ; the heating coil 32 is located at the bottom of the wafer stage 1 ; the heating coil 32 is used to heat the wafer stage 1 according to a heating instruction.

[0061] For some examples, see Figure 1 The heating coil 32 is connected to a power source S; the power source S is used to supply power to the heating coil 32.

[0062] Illustratively, the heating coil 32 starts to generate heat after the power source S is turned on to heat the wafer stage 1 ; and stops generating heat after the power source S is turned off to stop heating the wafer stage 1 .

[0063] For example, the material of the heating coil 32 includes but is not limited to thermally conductive metal and the like.

[0064] For example, see Figure 3 The shape of the heating coil 32 includes but is not limited to a cylindrical spiral or a flat spiral.

[0065] For example, the heating coils 32 are evenly distributed on the bottom of the wafer stage 1 .

[0066] In some embodiments, see Figure 1 and Figure 4 The heater 3 includes a heating pipe 33 located at the bottom of the wafer carrier 1, and a heating medium that flows into the heating pipe 33 according to the heating instruction.

[0067] It should be noted that, according to the heating start instruction, the heating medium is introduced into the heating pipe 33 to heat the wafer carrier 1; according to the heating stop instruction, the heating medium in the heating pipe 33 is cut off to stop heating the wafer carrier 1.

[0068] For example, the heating medium may be a gas medium or a liquid medium, including but not limited to air, oxygen, water vapor, carbon dioxide gas, molten salt, liquid lead, mineral oil or diphenyl ether mixture, etc.

[0069] In some embodiments, please refer to Figure 1 and Figure 4 The refrigerator 4 includes a cooling pipe 41 located at the bottom of the wafer carrier 1, and a cooling medium that flows into the cooling pipe 41 according to the cooling instruction.

[0070] It should be noted that, according to the cooling start instruction, the cooling medium is introduced into the cooling pipe 41 to cool the wafer carrier 1; according to the cooling stop instruction, the cooling medium in the cooling pipe 41 is cut off to stop cooling the wafer carrier 1.

[0071] For example, the cooling medium may be a gaseous medium or a liquid medium, including but not limited to air, nitrogen, or a water-soluble coolant.

[0072] It should be noted that Figure 4The cooling pipe 41 and the heating pipe 33 are taken as the same pipe for example, but it can be understood that the cooling pipe 41 and the heating pipe 33 can also be different pipes set independently, and the shapes of the cooling pipe 41 and the heating pipe 33 can be the same or different, and the present disclosure does not limit this.

[0073] In some embodiments, the electron beam detection device further includes a heat insulator; the heat insulator is located at the bottom of the temperature control module TC; the heat insulator is used to maintain a stable temperature of the temperature control module TC during the test process of the wafer W to be tested.

[0074] In some examples, the incubator is used to maintain the temperature of the temperature control module TC at a preset temperature value during the test process of the wafer W to be tested.

[0075] For example, the preset temperature value of the thermostat ranges from -70°C to 200°C; the preset temperature value of the thermostat can be, for example, -70°C, -60°C, -50°C, -40°C, -30°C, -20°C, -10°C, 0°C, 10°C, 20°C, 40°C, 60°C, 80°C, 90°C, 100°C, 120°C, 150°C, 160°C, 180°C, 185°C, 190°C, 195°C, 200°C, etc.

[0076] In some embodiments, see Figure 5 The wafer carrier 1 is located in the process chamber 6; the temperature control module TC includes a liquid pipeline 51, a gas pipeline 52, a first heat conduction path 53, a second heat conduction path 54, an expansion valve 55 and a compressor 56; the liquid pipeline 51 has a liquid medium flowing therein; the gas pipeline 52 has a gas medium flowing therein; the first heat conduction path 53 is located in the process chamber 6; the first heat conduction path 53 connects the liquid pipeline 51 and the gas pipeline 52; the first heat conduction path 53 is used to dissipate heat to the process chamber 6 according to a heating instruction, so that the gas medium condenses into a liquid medium; and absorb heat in the process chamber 6 according to a cooling instruction, so that the liquid medium evaporates into a gas medium; The second heat conduction path 54 is located outside the process chamber 6; the second heat conduction path 54 connects the liquid pipeline 51 and the gas pipeline 52; the second heat conduction path 54 is used to absorb external heat according to the heating instruction, causing the liquid medium to evaporate into a gaseous medium; and to dissipate heat to the outside according to the cooling instruction, causing the gaseous medium to condense into a liquid medium; the expansion valve 55 is located on the liquid pipeline 51 between the first heat conduction path 53 and the second heat conduction path 54; the expansion valve 55 is used to cool and reduce the pressure of the liquid medium; the compressor 56 is located on the gas pipeline 52 between the first heat conduction path 53 and the second heat conduction path 54; the compressor 56 is used to pressurize the gaseous medium.

[0077] According to the above embodiment, a refrigerant flows through the temperature control module TC, and the refrigerant can undergo a reversible gas-liquid phase change under certain conditions; wherein the liquid medium is the liquid state of the refrigerant, and the gas medium is the gas state of the refrigerant.

[0078] For example, the refrigerant includes, but is not limited to, Freon (including fluorine, chlorine, and bromine derivatives of saturated hydrocarbons), azeotropic mixtures (i.e., azeotropic solutions formed by mixing two Freons in a certain proportion), hydrocarbons (including propane, ethylene, etc.), or ammonia.

[0079] For example, please continue to see Figure 5 As the temperature control module TC cools the process chamber 6 according to the cooling command issued by the controller C, the liquid medium is cooled and depressurized in the expansion valve 55 before flowing to the first heat conduction path 53. There, it absorbs heat from the process chamber 6 and evaporates into a gaseous medium. The evaporated gaseous medium is pressurized by the compressor 56 and flows to the second heat conduction path 54. There, it dissipates heat to the outside and condenses into a liquid medium. The condensed liquid medium then flows back to the expansion valve 55, forming a cycle of gaseous and liquid media within the temperature control module TC. During this process, the first heat conduction path 53 functions as an evaporator, while the second heat conduction path 54 functions as a condenser. This lowers the temperature of the process chamber 6, enabling the second test of the wafer W to be tested in a low-temperature environment.

[0080] For example, please continue to see Figure 5 When temperature control module TC heats process chamber 6 according to heating instructions from controller C, the gaseous medium is pressurized by compressor 56 and flows to first heat conduction path 53. There, it dissipates heat to process chamber 6 and condenses into liquid medium. The condensed liquid medium is cooled and depressurized by expansion valve 55 before flowing to second heat conduction path 54. There, it absorbs external heat and evaporates into gaseous medium. The evaporated gaseous medium then flows back to compressor 56, forming a cycle of gaseous and liquid medium within temperature control module TC. During this process, first heat conduction path 53 functions as a condenser, while second heat conduction path 54 functions as an evaporator. This increases the temperature of process chamber 6, enabling the first test of wafer W under test to be performed in a high-temperature environment.

[0081] It should be noted that the refrigerant in the expansion valve 55 is liquid, the refrigerant in the first heat conduction path 53 is a gas-liquid mixture, the refrigerant in the compressor 56 is gas, and the refrigerant in the second heat conduction path 54 is a gas-liquid mixture.

[0082] In the embodiment of the present application, the temperature control module TC increases or decreases the temperature of the process chamber 6 according to the heating instructions and cooling instructions issued by the controller C, so that the wafer W to be tested is placed in different temperature environments (for example, a high temperature environment and a low temperature environment), and emits an electron beam to the wafer W to be tested through the electron gun E to perform electrical defect detection on the wafer W to be tested under different temperature environments. In this way, device failure problems can be discovered in a timely manner during the research and development and production stages of the wafer, thereby improving wafer testing efficiency and wafer product yield.

[0083] In the description of this specification, reference to the terms "some embodiments," "some examples," "exemplarily," etc., means that a specific feature, structure, material, or characteristic described in conjunction with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0084] The technical features of the above embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0085] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the utility model patent. It should be noted that a person skilled in the art may make various modifications and improvements without departing from the scope of the present application, and these modifications and improvements are all within the scope of protection of the present application.

Claims

1. An electron beam detection device, characterized in that include: Wafer stage, used to carry the wafer to be tested; A temperature sensor is located on the wafer stage and is used to detect the temperature information of the wafer stage; a controller connected to the temperature sensor, configured to receive the temperature information and generate a heating instruction or a cooling instruction according to a test requirement and the temperature information; a temperature control module, connected to the controller, and configured to heat the wafer stage according to the heating instruction; and, cooling the wafer stage according to the cooling instruction; The electron gun is used to emit an electron beam to the wafer to be tested so as to test the wafer to be tested.

2. The electron beam detection device according to claim 1, wherein The test of the wafer to be tested includes a first test and a second test; the heating instruction includes a heating start instruction and a heating stop instruction, and the cooling instruction includes a cooling start instruction and a cooling stop instruction; The controller is also used to generate the heating start instruction when the temperature of the wafer carrier is lower than the first target temperature during the first test of the wafer to be tested, and generate the heating stop instruction when the temperature of the wafer carrier reaches the first target temperature; and to generate the cooling start instruction when the temperature of the wafer carrier is higher than the second target temperature during the second test of the wafer to be tested, and generate the cooling stop instruction when the temperature of the wafer carrier reaches the second target temperature; wherein the first target temperature is greater than the second target temperature.

3. The electron beam detection device according to claim 2, wherein: The controller is also used to output a first test instruction after generating the heating stop instruction, and to output a second test instruction after generating the cooling stop instruction; the electron gun is coupled to the controller, and is also used to emit an electron beam to the wafer to be tested according to the first test instruction to perform a first test on the wafer to be tested; and, to emit an electron beam to the wafer to be tested according to the second test instruction to perform a second test on the wafer to be tested.

4. The electron beam detection device according to claim 1, wherein The temperature control module includes: a heater, configured to heat the wafer stage according to the heating instruction; A refrigerator is used to cool the wafer carrier according to the cooling instruction.

5. The electron beam detection device according to claim 4, characterized in that The wafer carrier is located in the process chamber; the heater includes: A radiation heater is located at the top of the process chamber and is used to heat the wafer carrier according to the heating instruction.

6. The electron beam detection device according to claim 4, characterized in that The heater comprises: A heating coil is located at the bottom of the wafer stage and is used to heat the wafer stage according to the heating instruction.

7. The electron beam detection device according to claim 4, characterized in that The heater includes a heating pipeline located at the bottom of the wafer carrier, and a heating medium flowing into the heating pipeline according to the heating instruction.

8. The electron beam detection device according to claim 4, characterized in that The refrigerator includes a cooling pipeline located at the bottom of the wafer carrier, and a cooling medium flowing into the cooling pipeline according to the cooling instruction.

9. The electron beam detection device according to any one of claims 6 to 8, characterized in that: Also includes: The insulator is located at the bottom of the temperature control module and is used to keep the temperature of the temperature control module stable during the test process of the wafer to be tested.

10. The electron beam detection device according to claim 1, wherein The wafer carrier is located in the process chamber; the temperature control module includes: Liquid pipeline, in which liquid medium flows; A gas pipeline, in which a gas medium flows; a first heat conduction path, located in the process chamber and connected to the liquid pipeline and the gas pipeline, for dissipating heat to the process chamber according to the heating instruction to condense the gaseous medium into the liquid medium; and for absorbing heat in the process chamber according to the cooling instruction to evaporate the liquid medium into the gaseous medium; a second heat conduction path, located outside the process chamber and connected to the liquid pipeline and the gas pipeline, for absorbing external heat according to the heating instruction to evaporate the liquid medium into the gaseous medium; and for dissipating heat to the outside according to the cooling instruction to condense the gaseous medium into the liquid medium; an expansion valve, located on the liquid pipeline between the first heat conduction path and the second heat conduction path, for reducing the temperature and pressure of the liquid medium; A compressor is located on the gas pipeline between the first heat conduction path and the second heat conduction path, and is used to pressurize the gas medium.

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