Ka frequency band slide glass type power amplifier

Abstract

The utility model discloses a Ka frequency band slide glass type power amplifier, and belongs to the technical field of microwaves and millimeter waves. The 4W GaAs power amplifier comprises two 4W GaAs power amplifier chips, an input thin film circuit, an output thin film circuit, two power supply thin film circuits, a group of power divider chips and gaskets, two groups of power resistance loads and gaskets, eight chip capacitors I, sixteen chip capacitors II and a slide glass. The saturation output power of the 4W GaAs power amplifier chip is 36dBm (namely 4W); the 50-ohm straight micro-strip, the 50-ohm arc micro-strip, the power divider chip and the gasket on the input film circuit form a Wilkinson power divider; the main body of the output thin film circuit is an improved Gysel power combiner; the power resistance load can bear a continuous wave signal with the power of 20W; the chip capacitor I is 1000 pF, and the chip capacitor II is 100 pF; the components are welded on a slide glass in an eutectic manner and are interconnected through gold wires or gold strips. The utility model has the characteristics of small volume, light weight, excellent index, complete independence and controllability.

Description

Technical Field

[0001] The utility model relates to a Ka-band chip-type power amplifier, belongs to the technical field of microwave and millimeter waves, and is particularly suitable for being applied to a Ka-band solid-state power amplifier of a satellite communication microwave channel. Background Art

[0002] In 2004, the US company Triquint launched the TGA4915-EPU-CP, a 6.3W Ka-band packaged power amplifier (later renamed the TGA4915-CP). Based on a 0.25μm gallium arsenide (GaAs) pHEMT process, it delivers 22dB of gain and a typical saturated output power of 38dBm (6.3W) in the 26GHz to 31GHz frequency range. Due to its ease of use, this product has become a classic GaAs power amplifier and is widely used worldwide. In 2016, the 13th Research Institute of China Electronics Technology Group Corporation (CETC) developed a 4W GaAs power amplifier chip, delivering 23dB of gain and 36dBm of saturated output power in the 24GHz to 31GHz frequency range. Subsequently, the 13th Research Institute shifted its research focus to the more popular gallium nitride (GaN) power amplifier, achieving rapid progress. However, the drain voltage of the Ka-band GaN power amplifier is 20V, and the drain voltage of the GaAs power amplifier is 6V, so the two cannot replace each other in situ.

[0003] Power amplifiers based on the TGA4915-CP, developed and produced in China around 2010, have gradually reached the end of their lifespans and require repair. However, the current procurement channels for the TGA4915-CP are limited, making repairs difficult. Utility Model Content

[0004] In view of the current situation that the procurement channels of TGA4915-CP are not smooth, which makes it difficult to repair power amplifier equipment, the utility model proposes a Ka-band chip-type power amplifier with the characteristics of small size, light weight, excellent indicators, and complete independent control. It can replace the imported TGA4915-CP power amplifier in situ.

[0005] In order to achieve the above purpose, the technical solution adopted by the utility model is:

[0006] A Ka-band chip-type power amplifier, comprising two 4W GaAs power amplifier chips, an input thin-film circuit, an output thin-film circuit, two power supply thin-film circuits, chip capacitor I, chip capacitor II, and a chip carrier;

[0007] The carrier surface is divided into three areas: left, middle, and right. The middle area is provided with a boss, and three grooves extending along the boss are provided, penetrating the left and right areas. On the boss, the area between two adjacent grooves is used for positioning and eutectic welding of the 4WGaAs power amplifier chip, and the grooves are used for setting the power supply thin film circuit, chip capacitor I, and chip capacitor II. The left and right areas are used for positioning and eutectic welding of the input thin film circuit and the output thin film circuit.

[0008] The power supply thin film circuit, chip capacitor I, chip capacitor II, input thin film circuit, and power supply microstrips on the output thin film circuit on the peripheral side of the 4W GaAs power amplifier chip are connected by gold wires or gold ribbons, and are used to provide a negative voltage for the gates of the two 4W GaAs power amplifier chips and a positive voltage for the drains. The output end of the input thin film circuit is connected to the input ends of the two 4W GaAs power amplifier chips by a gold wire, and the input end of the output thin film circuit is connected to the output ends of the two 4W GaAs power amplifier chips by a gold wire.

[0009] Furthermore, among the three grooves of the boss in the middle area of ​​the carrier, the middle groove is provided with four chip capacitors I and eight chip capacitors II, and the grooves at both ends are respectively provided with a power supply film circuit, two chip capacitors I and four chip capacitors II.

[0010] Furthermore, the input thin film circuit includes a 50-ohm straight microstrip, two 50-ohm arc microstrips, a power divider chip and a gasket to form a Wilkinson power divider; one end of the 50-ohm straight microstrip is connected to the input end of the power divider chip, and the two 50-ohm arc microstrips are respectively connected to the two output ends of the power divider chip; the end of the 50-ohm arc microstrip is connected to the input end of the 4W GaAs power amplifier chip.

[0011] Furthermore, the chip capacitor I is a 1000pF single-layer capacitor, and the chip capacitor II is a 100pF single-layer capacitor.

[0012] Furthermore, the slide has a horizontal length of 13.36 mm and a vertical length of 16.51 mm; four through holes with a diameter of 2 mm are provided at the four corners of the slide for easy fixation.

[0013] Furthermore, the carrier wafer is made of tungsten copper material (W-10% Cu) and the surface is gold-plated with 2μm; the substrate material used for the thin film circuit is aluminum nitride (AlN), with a purity of 98%, a thickness of 0.254mm, a dielectric constant of 8.4, and a surface gold layer thickness of 4μm.

[0014] Furthermore, the main body of the output thin film circuit is an improved Gysel power combiner, which is a five-port device including two input ports, one output port and two isolation ports, and the two isolation ports are connected to corresponding power resistance loads.

[0015] Furthermore, the two output ports of the Wilkinson power divider face the same direction and are opposite to its input ports; the two input ports of the improved Gysel power combiner face the same direction and are opposite to its output ports; and the two isolation ports of the improved Gysel power combiner face opposite to each other and are perpendicular to the directions of its output ports.

[0016] Compared with the prior art, the beneficial effects of the present invention are:

[0017] 1. In order to be compatible with the operating frequencies of previous and currently under-development power amplifier devices, the present invention proposes a Ka-band chip-type power amplifier in the frequency range of 27.5 GHz to 31.0 GHz, which has the characteristics of small size, light weight, excellent performance, and full autonomous control.

[0018] 2. This utility model proposes an improved Ka-band Gysel power divider / combiner with the characteristics of low insertion loss, good amplitude and phase consistency, high isolation, good input and output echo, and simple structure. In addition, the two isolated ports can be connected to external power load resistors, so the structure can withstand large power.

[0019] 3. This utility model proposes a new approach to microstrip planar power combining, combining two equal-amplitude and in-phase power dividers / combiners. The Wilkinson power divider is used as a power divider because it can withstand low power, while the improved Gysel power combiner can withstand higher power and is used as a power combiner.

[0020] 4. This utility model shortens the production and maintenance cycle of equipment and has high promotion and application value. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a principle block diagram of the utility model;

[0022] Figure 2 It is a three-dimensional structural schematic diagram of the utility model;

[0023] Figure 3 This is a schematic diagram of the split three-dimensional structure of the utility model;

[0024] Figure 4 It is a schematic diagram of the planar structure of the utility model;

[0025] Figure 5 It is a schematic diagram of the planar structure of the Wilkison power divider / combiner;

[0026] Figure 6 This is a schematic diagram of the planar structure of the improved Gysel power divider / combiner;

[0027] Figure 7 It is the amplitude curve of the improved Gysel power divider / combiner;

[0028] Figure 8 It is the phase curve diagram of the improved Gysel power divider / combiner;

[0029] Figure 9 This is a graph of the isolation of the improved Gysel power divider / combiner;

[0030] Figure 10 This is the input and output return loss curve of the improved Gysel power divider / combiner. DETAILED DESCRIPTION

[0031] To facilitate those skilled in the art to understand the technical content of the present invention, the present invention is further described below with reference to the accompanying drawings.

[0032] See Figures 1-4 The utility model is a Ka-band chip-type power amplifier, comprising two 4W GaAs power amplifier chips 1, an input thin-film circuit 2, an output thin-film circuit 3, two power supply thin-film circuits 4, a group of power divider chips 5 and gaskets 6, two groups of power resistor loads 7 and gaskets 8, eight chip capacitors I 9, sixteen chip capacitors II 10 and a chip carrier 11.

[0033] The 4W GaAs power amplifier chip 1, input thin film circuit 2, output thin film circuit 3, power supply thin film circuit 4, power divider chip 5 and gasket 6, power resistor load 7 and gasket 8, chip capacitor I 9 and chip capacitor II 10 are all soldered on the carrier 11 through gold-tin eutectic welding and interconnected by gold wire or gold ribbon.

[0034] The 50-ohm straight microstrip 12, two 50-ohm arc microstrips 13, the power divider chip 5, and the gasket 6 on the input thin film circuit 2 form a Wilkinson power divider 14. The schematic diagram of its planar structure is shown in FIG. Figure 5 A signal enters the power divider from the input port, and the two output ports output two signals of equal amplitude and phase. Ports b and c of the Wilkinson power divider 14 face the same direction, opposite to port a. The four microstrip fold lines on both sides of ports b and c on the input thin-film circuit 2 are power supply microstrips 15.

[0035] The output thin film circuit 3 is composed of an improved Gysel power combiner 16 and a power supply microstrip 15; Figure 6The improved Gysel power combiner 16 is a five-port device comprising two input ports, one output port, and two isolation ports. Two signals of equal amplitude and phase enter the power combiner from the two input ports, respectively, and the output port outputs a synthesized signal. The two isolation ports are connected to a power resistor load 7. Ports e and f of the improved Gysel power combiner 16 face the same direction and are opposite to port d. Ports g and h are isolation ports, facing opposite directions and perpendicular to port d. Ports g and h of the traditional Gysel power combiner face the same direction and are opposite to port d. After connecting to the power resistor load 7, the size is large, which limits its popularization and application. The present invention improves its structure by rotating the two isolation ports 90° and then connecting them to the power resistor load 7 through gold wire bonding, effectively reducing the size of the structure in the signal transmission direction.

[0036] Specifically, Figure 7-Figure 9 They are respectively the amplitude curve diagram, phase curve diagram and isolation curve diagram of the improved Gysel power divider / combiner, Figure 10 The following is a graph of input and output return loss. As shown in the figure, within the frequency range of 27.5 GHz to 31.0 GHz, the amplitude difference between the two output ports (ports e and f) is within 0.02 dB, the phase difference is within 0.2°, and the isolation is better than 19 dB. The return loss of the input port (port d) is better than 29 dB, and the return loss of the output ports (ports e and f) is better than 19 dB. The improved Gysel power divider / combiner features low insertion loss, good amplitude and phase consistency, high isolation, good input and output return, and a simple structure. Furthermore, the two isolated ports can be connected to external power load resistors, making this structure capable of handling high power.

[0037] The surface of the carrier 11 is divided into three areas: left, middle and right; among them, the middle area is provided with a boss, and three grooves are provided along the extension direction of the boss, which pass through the left and right areas; on the boss, the position between two adjacent grooves is used for positioning and eutectic welding of two 4W GaAs power amplifier chips 1, and the groove position is used to set the power supply thin film circuit 4, chip capacitor I 9 and chip capacitor II 10; the left and right areas are used for positioning and eutectic welding of the input thin film circuit 2, the output thin film circuit 3, the power divider chip 5 and the gasket 6, the power resistor load 7 and the gasket 8.

[0038] The 4W GaAs power amplifier chip 1 is a Ka-band power amplifier chip produced by China Electronics Technology Group Corporation 13th Institute, model NC11310C-2431P4, with dimensions of 4.29mm×4.50mm×0.07mm. Within the frequency range of 24GHz to 31GHz, the chip has a saturated output power of 36dBm (i.e., 4W), a 1dB compression point output power of 35dBm, and a small signal gain of 23dB. Typical DC parameters of the chip are: gate operating voltage of -0.4V, drain operating voltage of +6V, static drain current of 2.5A, and dynamic drain current of 3.2A.

[0039] The power supply thin film circuit 4, chip capacitor I 9, chip capacitor II 10, and power supply microstrip 15 on the input / output thin film circuit around the 4W GaAs power amplifier chip 1 are connected by gold wires or gold strips, used to provide negative voltage for the gates of the two power amplifier chips and positive voltage for the drains. The power supply thin film circuit 4 has two gold-plated layers, the smaller gold-plated layer is connected to an external -0.4V DC voltage, and the larger gold-plated layer is connected to an external +6V DC voltage. The power supply microstrip 15 is 0.4mm wide. The two output ends of the Wilkinson power divider 14 are connected to the input ends of the two 4W GaAs power amplifier chips 1 by gold wires. The two input ends of the improved Gysel power combiner 16 are connected to the output ends of the two 4W GaAs power amplifier chips 1 by gold wires.

[0040] The power divider chip 5 is a product of China Electronics Technology Group Corporation 13, model NC6584C-2931, with dimensions of 1.08mm×1.60mm×0.10mm; within the frequency range of 27.5GHz to 31GHz, the chip has an insertion loss of less than 0.4dB, an isolation between the two output ports better than 23dB, an input standing wave ratio of less than 1.1:1, and an output standing wave ratio of less than 1.15:1; the chip is eutectic welded on a 0.15mm thick molybdenum copper gasket 6.

[0041] The power resistor load 7 is a NC6109C-167 GaN power resistor chip produced by China Electronics Technology Group Corporation 13, with dimensions of 1.10mm×0.58mm×0.08mm and a microwave impedance of 50Ω. To ensure good heat dissipation, it is welded to a 0.15mm thick molybdenum-copper gasket 8 using gold-tin eutectic welding. The power resistor load 7 and the gasket 8 are integrally welded to the carrier 11, and can withstand a maximum continuous wave signal power of 20W.

[0042] Furthermore, among the three grooves of the boss in the middle area of ​​the carrier 11, the middle groove is provided with four chip capacitors I9 and eight chip capacitors II 10, and the grooves at both ends are respectively provided with a power supply film circuit 4, two chip capacitors I 9 and four chip capacitors II 10.

[0043] Furthermore, the chip capacitor I 9 is a 1000pF single-layer capacitor with dimensions of 0.9mm×0.9mm×0.18mm; the chip capacitor II 10 is a 100pF single-layer capacitor with dimensions of 0.254mm×0.254mm×0.18mm.

[0044] Furthermore, the slide 11 has a horizontal length of 13.36 mm and a vertical length of 16.51 mm; four through holes with a diameter of 2 mm are provided at the four corners of the slide 11 for easy fixation.

[0045] Specifically, the carrier 11 is made of tungsten copper material (W-10% Cu) and is gold-plated with 2μm on the surface. In order to optimize circuit indicators and facilitate gold wire bonding, it is necessary to ensure that the bonding pressure point heights of components in each area are basically consistent. Therefore, the thickness of each position of the carrier 11 is different. The thickness of the boss in the middle area is 0.76mm, the thickness of the three grooves is 0.66mm, and the thickness of the left and right areas is 0.56mm.

[0046] Specifically, the substrate material used for the thin-film circuit is aluminum nitride (AlN), with a purity of 98%, a thickness of 0.254 mm, a dielectric constant of 8.4, and a surface gold layer thickness of 4 μm; AlN material has excellent thermal conductivity.

[0047] The brief working principle of this utility model is as follows:

[0048] The Ka-band signal is input from the input port of the Wilkinson power divider, which outputs two signals of equal amplitude and phase, respectively entering two 4W GaAs power amplifier chips; the two amplified Ka-band signals respectively enter the two input ports of the improved Gysel power combiner, and the output port outputs a combined signal with an output power of no less than 38.45dBm (i.e. 7W).

[0049] The technical indicators of this utility model are as follows:

[0050] Operating frequency band: 27.5GHz~31.0GHz;

[0051] Gain: ≥21.5dB;

[0052] Saturated output power: ≥38.45dBm (7W);

[0053] P -1dB Output power: ≥37.45dBm;

[0054] Power supply requirements: +6V / 6.5A (typical); -0.4V / 2mA (typical);

[0055] Dimensions: 13.36mm×16.51mm×1.8mm.

[0056] In summary, the utility model has the characteristics of small size, light weight, excellent performance, and complete independent control. It can replace the imported Ka-band 6.3W packaged power amplifier TGA4915-CP in situ, shortening the equipment production and maintenance cycle, and has high promotion and application value.

[0057] Those skilled in the art will appreciate that the embodiments described are intended to help readers understand the principles of the present invention and should be understood as not limiting the scope of protection of the present invention to the embodiments described. Those skilled in the art will appreciate that various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention are intended to be included within the scope of the claims of the present invention.

Claims

1. A Ka-band chip-type power amplifier, characterized in that: Includes two 4WGaAs power amplifier chips, an input thin film circuit, an output thin film circuit, two power supply thin film circuits, chip capacitor I, chip capacitor II and a carrier; The carrier surface is divided into three areas: left, middle, and right. The middle area is provided with a boss, and three grooves extending along the boss are provided, penetrating the left and right areas. On the boss, the area between two adjacent grooves is used for positioning and eutectic welding of the 4W GaAs power amplifier chip, and the grooves are used for setting the power supply thin film circuit, chip capacitor I, and chip capacitor II. The left and right areas are used for positioning and eutectic welding of the input thin film circuit and the output thin film circuit. The power supply thin film circuit, chip capacitor I, chip capacitor II, input thin film circuit, and power supply microstrips on the output thin film circuit on the peripheral side of the 4W GaAs power amplifier chip are connected by gold wires or gold ribbons, and are used to provide a negative voltage for the gates of the two 4W GaAs power amplifier chips and a positive voltage for the drains. The output end of the input thin film circuit is connected to the input ends of the two 4W GaAs power amplifier chips by a gold wire, and the input end of the output thin film circuit is connected to the output ends of the two 4W GaAs power amplifier chips by a gold wire.

2. The Ka-band chip-type power amplifier according to claim 1, wherein: Among the three grooves of the boss in the middle area of ​​the carrier, the middle groove is provided with four chip capacitors I and eight chip capacitors II, and the grooves at both ends are respectively provided with a power supply film circuit, two chip capacitors I and four chip capacitors II.

3. The Ka-band chip-type power amplifier according to claim 1, wherein: The input thin film circuit includes a 50-ohm straight microstrip, two 50-ohm arc microstrips, a power divider chip and a gasket to form a Wilkinson power divider; one end of the 50-ohm straight microstrip is connected to the input end of the power divider chip, and the two 50-ohm arc microstrips are respectively connected to the two output ends of the power divider chip; the end of the 50-ohm arc microstrip is connected to the input end of the 4WGaAs power amplifier chip.

4. The Ka-band chip-type power amplifier according to claim 1, wherein: The chip capacitor I is a 1000pF single-layer capacitor, and the chip capacitor II is a 100pF single-layer capacitor.

5. The Ka-band chip-type power amplifier according to claim 1, wherein: The slide has a horizontal length of 13.36 mm and a vertical length of 16.51 mm; four through holes with a diameter of 2 mm are provided at the four corners of the slide for easy fixation.

6. The Ka-band chip-type power amplifier according to claim 1, wherein: The carrier is made of tungsten copper material and has a surface gold plating of 2μm; the substrate material used in the thin film circuit is aluminum nitride with a purity of 98%, a thickness of 0.254mm, a dielectric constant of 8.4, and a surface gold layer thickness of 4μm.

7. The Ka-band chip-type power amplifier according to claim 3, wherein: The main body of the output thin film circuit is an improved Gysel power combiner, which is a five-port device including two input ports, one output port and two isolation ports, wherein the two isolation ports are connected to corresponding power resistance loads.

8. The Ka-band chip-type power amplifier according to claim 7, wherein: The two output ports of the Wilkinson power divider face the same direction and are opposite to the input ports; the two input ports of the improved Gysel power combiner face the same direction and are opposite to the output ports; The two isolation ports of the improved Gysel power combiner are oriented in opposite directions and perpendicular to the directions of the output port thereof.

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