C-band dual-channel emission multifunctional module based on HTCC packaging

Abstract

The utility model provides a C-band dual-channel emission multifunctional module based on HTCC packaging, which relates to the technical field of microwave radio frequency circuits, and comprises an HTCC multilayer board, and the HTCC multilayer board comprises a top layer circuit, a second layer circuit, a third layer circuit, a fourth layer circuit, a fifth layer circuit, a bottom layer circuit and an insulating medium layer arranged between the adjacent circuits which are sequentially arranged from top to bottom; the bottom-layer circuit is used for grounding, the second-layer circuit and the fourth-layer circuit are both vertically interconnected with the bottom-layer circuit, the third-layer circuit and the fifth-layer circuit are both vertically interconnected with the top-layer circuit, the third-layer circuit is provided with a radio frequency transmission line and a low-frequency signal line, and the fifth-layer circuit is provided with a low-frequency signal line; the top layer circuit comprises a power divider, two multifunctional chips, two power amplifier chips, a monitoring unit and a control unit. According to the utility model, the assembly and debugging difficulty can be reduced, the use reliability is improved, and the practicability is stronger.

Description

Technical Field

[0001] The present application relates to the technical field of microwave radio frequency circuits, and in particular to a C-band dual-channel transmission multifunctional module based on HTCC packaging. Background Art

[0002] RF transmitting circuits generally include amplifiers, digitally controlled attenuators, digitally controlled phase shifters, RF switches and other RF devices. When designing RF transmitting circuits, a RF multi-layer board design is generally adopted, that is, multiple independent chips are assembled on a circuit board to implement the RF transmitting circuit. This type of circuit has a large number of chips, occupies a large volume, and is complex to assemble. Chips are interconnected by transmission lines, the consistency between components is poor, the workload of subsequent debugging is large, and the multi-chip design increases material and assembly costs. Utility Model Content

[0003] In order to solve the above-mentioned related existing technical defects, the present application provides a C-band dual-channel transmission multi-function module based on HTCC packaging, which can reduce the difficulty of assembly and debugging, improve the reliability of use, and has strong practicality.

[0004] In order to achieve the above purpose, the utility model adopts the following technologies:

[0005] A C-band dual-channel transmitter multifunctional module based on HTCC packaging, characterized by comprising an HTCC multilayer board, which includes, arranged in order from top to bottom, a top-layer circuit, a second-layer circuit, a third-layer circuit, a fourth-layer circuit, a fifth-layer circuit, a bottom-layer circuit, and an insulating dielectric layer provided between adjacent circuits, wherein:

[0006] The bottom layer circuit is used for grounding. The second and fourth layer circuits are vertically interconnected with the bottom layer circuit through metal via structures. The third and fifth layer circuits are vertically interconnected with the top layer circuit through metal via structures. The third layer circuit is equipped with radio frequency transmission lines and low-frequency signal lines, and the fifth layer circuit is equipped with low-frequency signal lines.

[0007] The top-level circuit includes a power splitter, two multi-function chips, two main attenuators, two power amplifier chips, a monitoring unit, and a control unit, among which:

[0008] The power splitter is used to receive the radio frequency signal and split it into two paths, which are then output to two multi-function chips through the radio frequency transmission line.

[0009] The two multifunctional chips are used to phase shift, amplify and attenuate the RF signal and then output it to the two main attenuators through the RF transmission line;

[0010] The two main attenuators are used to adjust the gain of the RF signal and output it to two power amplifier chips respectively;

[0011] Two power amplifier chips are used to amplify the RF signal twice before outputting it;

[0012] The monitoring unit is used to perform coupled detection on the RF signals output by the two groups of power amplifier chips, compare them with the threshold voltage, and output a TTL signal;

[0013] The control unit is used to receive the low-frequency signal input from the top-level circuit and transmitted through the low-frequency signal line, and control the multi-function chip to perform phase shifting, amplification, and attenuation on the radio frequency signal through the low-frequency signal, and control the power amplifier chip to perform secondary amplification on the radio frequency signal.

[0014] Furthermore, the multifunctional chip includes a single-pole single-throw switch circuit, a digitally controlled phase shifter, a small signal amplifier, and a digitally controlled attenuator connected in sequence;

[0015] The single-pole single-throw switch circuits of the two multi-function chips are used to respectively receive the two RF signals output by the power divider and control the on and off. The digitally controlled phase shifter is used to shift the phase of the RF signal. The small signal amplifier is used to amplify the RF signal to serve as the pre-stage driver of the power amplifier chip. The digitally controlled attenuator is used to attenuate the RF signal and then output it.

[0016] Furthermore, the monitoring unit includes two couplers, two detectors, and a comparator, wherein the coupling ends of the two couplers are respectively connected to the input ends of the two detectors, and the output ends of the two detectors are respectively connected to the two input ends of the comparator;

[0017] The two couplers are used to couple a part of the RF signals output by the two power amplifier chips to the detector respectively. The detector is used to detect the RF signal. The comparator is used to compare the two detected signals with the threshold voltage and then output a TTL signal.

[0018] Furthermore, the control unit includes two cascaded serial-to-parallel chips, two power modulation chips, an OR gate circuit, and a driving component. The output ends of the serial-to-parallel chips are respectively connected to the control ends of the single-pole single-throw switch circuit, the digitally controlled phase shifter, and the digitally controlled attenuator in the corresponding multi-function chip, as well as the input end of the OR gate circuit and the corresponding power modulation chip. The output end of the power modulation chip is connected to the control end of the amplifier in the corresponding multi-function chip, the output end of the OR gate circuit is connected to the input end of the driving component, and the output end of the driving component is respectively connected to the control ends of the two power amplifier chips.

[0019] The serial-to-parallel chip is used to receive low-frequency signals, convert them into three-part differential signals and one-bit PTC signal, and output them; the single-pole single-throw switch is also used to receive a part of the differential signal, and control the on-off according to the differential signal; the digitally controlled phase shifter is also used to receive a part of the differential signal, and control the phase shift amount of the radio frequency signal according to the differential signal; the digitally controlled attenuator is also used to receive a part of the differential signal, and control the attenuation amount of the radio frequency signal according to the differential signal; the power modulation chip is used to receive the PTC signal, and control the power on and off of the small signal amplifier in the multi-function chip according to the PTC signal; the OR gate circuit is used to receive two PTC signals, and output them after performing OR operation on the two PTC signals; the driving component modulates the power supply of the two power amplifier chips according to the signal output by the OR gate circuit.

[0020] Furthermore, the HTCC multilayer board is arranged in the housing.

[0021] Furthermore, the housing includes a first carrier, a frame, a cover, and a second carrier. The HTCC multilayer board is sintered on the first carrier, the frame is sintered on the HTCC multilayer board, the cover is welded to the upper end of the frame in parallel, the HTCC multilayer board is grooved at the corresponding position of the power amplifier chip, and the second carrier is arranged in the groove and welded to the first carrier.

[0022] Furthermore, the first carrier is made of copper-molybdenum-copper-copper laminate, the HTCC multilayer board is made of alumina, the second carrier is made of molybdenum-copper, and the surrounding frame and cover are both made of Kovar alloy.

[0023] The beneficial effects of the present invention are:

[0024] 1. It adopts the form of dual-channel integrated module, which is mostly installed on the components through electrical installation, which greatly simplifies the assembly process and saves more time for the assembly of subsequent batch products.

[0025] 2. When a single transmitter module is damaged, it can be directly disassembled and replaced without the need for a heated soldering station, which increases the maintainability of the product and reduces the product repair time.

[0026] 3. Use multi-function chips to replace the previous four loose chips, reducing the number of chips used; the power supply and switch control is changed from one chip controlling 16 channels to serial conversion and independent control of each channel; the transmitting module can be tested and tried separately, and then assembled to the component after completion, reducing the number of rework; the transmitting module can be disassembled separately, and the component does not need to be heated as a whole during rework, which will not affect its adjacent channel modules; omitting the FPGA, reducing its peripheral power supply circuit and FLASH chip, reducing the number of chips, and further reducing the probability of chip damage.

[0027] 4. It effectively reduces the number of chips in the module circuit, reduces the difficulty of assembly, and because the number of chips is reduced, the transmission line interconnection structure between chips is also reduced accordingly, which helps to improve the consistency between components, and can reduce the later debugging workload and reduce costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is a top-level circuit diagram of a C-band dual-channel transmission multifunctional module based on HTCC packaging according to an embodiment of the present application.

[0029] Figure 2 1 is a schematic structural diagram of a C-band dual-channel transmitting multifunctional module and a housing based on HTCC packaging according to an embodiment of the present application.

[0030] Figure 3 Schematic diagram of the structure of the HTCC multilayer board according to an embodiment of the present application.

[0031] Figure 4 Schematic diagram of the circuit principle of the C-band dual-channel transmission multifunctional module based on HTCC packaging according to an embodiment of the present application.

[0032] Figure 5 This is a circuit connection diagram of the internal structure of the multifunctional chip, monitoring unit, and control unit of the C-band dual-channel transmission multifunctional module based on HTCC packaging according to an embodiment of the present application.

[0033] Markings in the figure: 1-housing, 11-first carrier board, 12-frame, 13-cover, 14-second carrier board, 2-HTCC multilayer board, 3-power divider, 4-multi-function chip, 5-main attenuator, 6-power amplifier chip, 7-monitoring unit, 71-coupler, 72-detector, 73-comparator, 8-control unit, 81-serial-to-parallel chip, 82-power modulation chip, 83-OR gate circuit, 84-drive component. DETAILED DESCRIPTION

[0034] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the implementation methods of the present invention are described in detail below with reference to the accompanying drawings. However, the embodiments described in the present invention are only part of the embodiments of the present invention, rather than all the embodiments.

[0035] like Figure 1 and Figure 3As shown, this embodiment provides a C-band dual-channel transmitter multifunctional module based on HTCC packaging, including an HTCC multilayer board 2, which includes, from top to bottom, a top-layer circuit, a second-layer circuit, a third-layer circuit, a fourth-layer circuit, a fifth-layer circuit, a bottom-layer circuit, and an insulating dielectric layer provided between adjacent circuits. More specifically, the dielectric layer uses a ceramic sheet made of aluminum oxide to provide physical separation and signal isolation.

[0036] The bottom layer circuit is used for grounding, and the second layer circuit and the fourth layer circuit are vertically interconnected with the bottom layer circuit to ground the second layer circuit and the fourth layer circuit; the third layer circuit and the fifth layer circuit are vertically interconnected with the top layer circuit, and the third layer circuit is provided with a radio frequency transmission line and a low-frequency signal line, and the fifth layer circuit is provided with a low-frequency signal line. More specifically, the input and output ends of the radio frequency signal line and the input end of the low-frequency signal line of the module are all arranged on the top layer circuit to facilitate routing and external circuit connection; more specifically, vertical interconnection usually adopts a metal via structure to realize the connection between the circuits of each layer.

[0037] like Figure 1 and Figure 4 As shown, the top-level circuit includes a power divider 3, two multi-function chips 4, two power amplifier chips 6, a monitoring unit 7, and a control unit 8, wherein:

[0038] The power divider 3 is used to receive the radio frequency signal and divide it into two paths, which are output to two multifunctional chips 4 through the radio frequency transmission line respectively; the two multifunctional chips 4 are used to phase shift, amplify and attenuate the radio frequency signal and then output it to two main attenuators 5 through the radio frequency transmission line respectively; the two main attenuators 5 are used to gain adjust the radio frequency signal and then output it to two power amplifier chips 6 respectively; in this example, the power amplifier chip 6 uses a GaN power amplifier chip; the monitoring unit 7 is used to couple and detect the radio frequency signals output by the two groups of power amplifier chips 6 respectively, and then compare them with the threshold voltage to output a TTL signal; the control unit 8 is used to receive the low-frequency signal input from the top-level circuit and transmitted through the low-frequency signal line, and control the multifunctional chip 4 to phase shift, amplify and attenuate the radio frequency signal through the low-frequency signal, and control the power amplifier chip 6 to perform secondary amplification on the radio frequency signal.

[0039] With this design, the HTCC multilayer board 2 adopts a multi-layer structure, effectively reducing the planar size of the module. The power divider 3, multi-function chip 4, main attenuator 5, power amplifier chip 6, monitoring unit 7, and control unit 8 are arranged on the top circuit, while some low-frequency signal lines are arranged on the third and fifth layers. Second and fourth layers of circuits are arranged between the top circuit and the third layer of circuit, and between the third layer of circuit and the fifth layer of circuit, and dielectric layers are arranged between each layer of circuit, effectively separating the low-frequency circuit from the radio frequency circuit to ensure the electromagnetic compatibility of the module. At the same time, the number of chips in the module circuit is effectively reduced, reducing the difficulty of assembly. The reduction in the number of chips also reduces the transmission line interconnection structure between chips, which helps to improve the consistency between components and can reduce the workload of subsequent debugging and reduce costs.

[0040] The circuit connection of the module formed by this scheme is as follows Figure 3 As shown, the specific working method is as follows:

[0041] Radio frequency transmission, the radio frequency signal is input from the input end of the radio frequency transmission line on the top-level circuit, and then transmitted and processed by the power divider 3 to split the signal power into two paths and then transmitted to the radio frequency transmission line on the three-layer circuit through vertical interconnection. Then, it is transmitted to the top-level circuit through the vertical interconnection structure. The signal passes through the multi-function chip 4 in the top-level circuit and then is transmitted to the radio frequency transmission line on the three-layer circuit through vertical interconnection. Then, it is transmitted to the top-level circuit through the vertical interconnection structure, and is transmitted and processed by the main attenuator 5, the power amplifier chip 6, and the monitoring unit 7, and then output through the output end of the radio frequency transmission line. With this design, the transmission path of the radio frequency signal is set to two transmitting channels, and a cavity design is adopted between the two transmitting channels to meet the isolation requirements.

[0042] Low-frequency transmission: After the low-frequency signal is input from the input end of the low-frequency signal line on the top-level circuit, it is transmitted to the third-layer and fifth-layer circuits through the vertical interconnection structure, and transmitted through the low-frequency circuits on the third-layer and fifth-layer circuits. It is then transmitted to the top-level circuit through the vertical interconnection structure, and is processed by the control unit 8 in the top-level circuit and input to the multi-function chip 4 and the power amplifier chip 6 to control the multi-function chip 4 to perform phase shifting, amplification, and attenuation on the radio frequency signal, and to control the power amplifier chip 6 to perform secondary amplification on the radio frequency signal.

[0043] With this design, each device is set as an independent chip device, so that all chip devices and resistors, capacitors and inductors are assembled on the surface of the module. There are planar traces on the surface and inside the module, and the electrical connection of the entire transmitting circuit is completed through vertical interconnection holes, making the entire module small in size and highly integrated.

[0044] Preferably, Figure 1 and Figure 5As shown, the multifunctional chip 4 includes a single-pole single-throw switch circuit, a digitally controlled phase shifter, a small signal amplifier, and a digitally controlled attenuator which are connected in sequence.

[0045] The single-pole single-throw switch circuits of the two multifunctional chips 4 are used to respectively receive the two RF signals output by the power divider 3 and control the on and off. The digitally controlled phase shifter is used to shift the phase of the RF signal. The small signal amplifier is used to amplify the RF signal. That is, the small signal amplifier with signal amplification function is used as the pre-stage driver amplifier of the power chip; the digitally controlled attenuator is used to attenuate the RF signal and then output it.

[0046] With this design, the functions of single-pole single-throw switch circuit, digitally controlled phase shifter, small signal amplifier and digitally controlled attenuator are integrated into the multifunctional chip 4, so that the circuit board that originally required a larger layout area can be replaced by a small-sized multifunctional chip 4, which greatly reduces the size of the RF link and helps to miniaturize the module.

[0047] Preferably, Figure 1 and Figure 4 As shown, the monitoring unit 7 includes two couplers 71 , two detectors 72 , and a comparator 73 . The coupling ends of the two couplers 71 are respectively connected to the input ends of the two detectors 72 , and the output ends of the two detectors 72 are respectively connected to the two input ends of the comparator 73 .

[0048] The two couplers 71 are used to couple a part of the RF signals output by the two power amplifier chips 6 to the detector 72 respectively. The detector 72 is used to detect the RF signals. The comparator 73 is used to compare the two detected signals with the threshold voltage and then output a TTL signal.

[0049] With this design, power detection inside the module can be realized.

[0050] Preferably, Figure 1 and Figure 5 As shown, the control unit 8 includes two cascaded serial-to-parallel chips 81, two power supply modulation chips 82, an OR gate circuit 83, and a driving component 84. The output end of the serial-to-parallel chip 81 is respectively connected to the control end of the single-pole single-throw switch circuit, the digitally controlled phase shifter, and the digitally controlled attenuator in the corresponding multi-function chip, as well as the input end of the OR gate circuit 83 and the corresponding power supply modulation chip 82. The output end of the power supply modulation chip 82 is connected to the control end of the amplifier in the corresponding multi-function chip 4, the output end of the OR gate circuit 83 is connected to the input end of the driving component 84, and the output end of the driving component 84 is respectively connected to the control end of the two power amplifier chips 6.

[0051] The serial-to-parallel chip 81 is used to receive a low-frequency signal, convert it into three differential signals and one PTC signal, and output them; the single-pole single-throw switch is also used to receive a part of the differential signal and control the on-off according to the differential signal; the digitally controlled phase shifter is also used to receive a part of the differential signal and control the phase shift amount of the radio frequency signal according to the differential signal; the digitally controlled attenuator is also used to receive a part of the differential signal and control the attenuation of the radio frequency signal according to the differential signal; the power modulation chip 82 is used to receive the PTC signal and control the power on and off of the small signal amplifier in the multi-function chip 4 according to the PTC signal; the OR gate circuit 83 is used to receive two PTC signals and output them after performing an OR operation on the two PTC signals; the driving component 84 modulates the power supply of the two power amplifier chips 6 according to the signal output by the OR gate circuit 83; further preferably, through internal routing, the PTC signal is output to the power modulation chip 82 through one low-frequency signal line and output to the OR gate circuit 83 through another low-frequency signal line.

[0052] In this example, the serial-to-parallel chip 81 utilizes a 13-bit serial-to-parallel chip 81, which converts one serial TTL signal (DAT) into 12 pairs of parallel complementary -5V / 0V signal outputs and one TTL signal output (PTC). The first six pairs of complementary signals serve as differential signals for controlling the phase shift state (B13-B24) of the multifunction chip 4; the last six pairs of complementary signals serve as differential signals for controlling the attenuation state (B01-B12) of the multifunction chip 4. Due to input requirements, the 16dB attenuation state is not actually used in practice. Instead, it serves as a differential signal for controlling the on / off state of the multifunction chip 4. The data output bit PTC of the serial-to-parallel chip 81 is fed to the power modulation chip 82 to control the power supply to the small-signal amplifier in the multifunction chip 4. The driver component 84 utilizes a PMOS driver connected to a MOSFET to achieve power modulation for the power amplifier chip 6.

[0053] This design enables each channel to independently perform attenuation and phase shift control, and each channel has independent power-on and power output detection functions.

[0054] Further preferably, the input and output ends of the RF transmission line and the low-frequency signal line are connected with pins, and the pins extend to the outside of the module to facilitate the connection of the module with the external circuit; further preferably, the module includes three RF pins and ten low-frequency pins, wherein the three RF ports include one input port and two output ports, and the ten low-frequency ports include a control unit latch input terminal, a control unit data input terminal, a control unit clock input terminal, a control unit chip select input terminal, a positive 28V voltage power-on terminal, a positive 5V voltage power-on terminal, a negative 5V voltage power-on terminal, a first channel detection output terminal, a second channel detection output terminal and a ground terminal.

[0055] In the actual design process, when designing the multifunctional chip 4, reasonable layout is the key; the electromagnetic field principle should be fully utilized to analyze the signal direction, determine the layout position of each chip, the spacing between chips, the input and output points, and try to make the layout reasonable and minimize the chip area under the premise of meeting the indicators; the multifunctional chip 4 has a high degree of integration, the distance between chips is very close, and the mutual coupling is strong. Even if the performance of a single chip meets the indicators, the performance of the combined chip will change, especially with the increase of frequency, the change will be more drastic; by adding a grounding isolation belt between the chips and performing an overall electromagnetic simulation on the multifunctional chip, the coupling between chips is greatly reduced; since a single chip is based on a pure 50 ohm system design, the standing waves of each chip are definitely different, and the connection lines of each chip will also bring about changes in the standing waves. After the chips are cascaded, the overall performance will change due to the standing wave traction; therefore, in the design of the multifunctional chip 4, top-level simulation is used for analysis and adjustment.

[0056] Preferably, Figure 1 As shown, the HTCC multilayer board 2 is arranged in the housing 1 .

[0057] Preferably, Figures 1 to 3 As shown, the housing 1 includes a first carrier board 11, a frame 12, a cover board 13, and a second carrier board 14. The HTCC multilayer board 2 is sintered on the first carrier board 11, the frame 12 is sintered on the HTCC multilayer board 2, and the cover board 13 is welded to the upper end of the frame 12 in parallel. The HTCC multilayer board 2 is grooved at the position corresponding to the power amplifier chip 6. The second carrier board 14 is placed in the groove and welded to the first carrier board 11.

[0058] Preferably, Figure 2 As shown, the first carrier 11 is made of copper-molybdenum-copper-copper laminate, the HTCC multilayer board 2 is made of alumina, the second carrier 14 is made of molybdenum-copper, and the frame 12 and the cover 13 are both made of Kovar alloy.

[0059] Further preferably, the bottom circuit is a ground layer with a full-coverage structure, and the ground layer is a tungsten layer plated with a gold layer, which is sintered and connected to the first carrier board 11 to achieve good grounding and heat dissipation effects.

[0060] With this design, the power amplifier chip 6 inside the module has high power. If the heat inside the chip cannot be dissipated in time, it will cause damage to the chip, devices and substrate, and may even cause damage in severe cases. The dual-channel transmitting module in this solution is assembled on the component cavity in a screw-mounted form. Indium sheet is used as the gap filling material between the dual-channel transmitting module and the cavity, and copper-molybdenum-copper-copper is used as the packaging base plate of the dual-channel transmitting module. This combination can improve the heat dissipation capability and meet the low expansion coefficient requirement of the housing 1.

[0061] In this example, the ceramic tube shell is mainly composed of three materials: ceramic material, metal material and conductor material. The ceramic material is used to process the HTCC multilayer board 2 in the ceramic tube shell; the metal material is used to process the parts of the shell 1, including leads, sealing rings, cover plates, heat sinks, etc.; the conductor material is used for internal wiring and filling interconnection holes, playing the role of electrical interconnection.

[0062] During the actual design process, within a given size, it is necessary to meet the requirements of the ceramic shell's external structural design, leaving space for keys and fingers, sealing rings, partition walls, etc., and also meet the process bonding distance requirements; the layout and wiring area available for circuit design is relatively tight compared to the functions to be achieved. It is necessary to continuously understand the ceramic shell design process during the design process and continuously iterate the chip layout and wiring to integrate the two transmission channels into one module.

[0063] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application.

Claims

1. A C-band dual-channel transmission multifunctional module based on HTCC packaging, characterized in that: A HTCC multilayer board (2) is provided, which includes a top circuit, a second circuit, a third circuit, a fourth circuit, a fifth circuit, a bottom circuit, and an insulating dielectric layer provided between adjacent circuits, which are arranged in sequence from top to bottom, wherein: The bottom layer circuit is used for grounding. The second and fourth layer circuits are vertically interconnected with the bottom layer circuit through metal via structures. The third and fifth layer circuits are vertically interconnected with the top layer circuit through metal via structures. The third layer circuit is equipped with radio frequency transmission lines and low-frequency signal lines, and the fifth layer circuit is equipped with low-frequency signal lines. The top-level circuit includes a power divider (3), two multifunctional chips (4), two main attenuators (5), two power amplifier chips (6), a monitoring unit (7), and a control unit (8), wherein: The power divider (3) is used to receive the radio frequency signal and divide it into two paths, which are output to two multifunctional chips (4) respectively through the radio frequency transmission line; Two multifunctional chips (4) are used to phase-shift, amplify, and attenuate radio frequency signals and then output them to two main attenuators (5) via radio frequency transmission lines; The two main attenuators (5) are used to adjust the gain of the radio frequency signal and output it to the two power amplifier chips (6) respectively; Two power amplifier chips (6) are used to amplify the radio frequency signal twice and then output it; The monitoring unit (7) is used to perform coupling detection on the radio frequency signals output by the two groups of power amplifier chips (6), compare them with the threshold voltage, and output a TTL signal; The control unit (8) is used to receive a low-frequency signal input from the top circuit and transmitted through the low-frequency signal line, and to control the multifunctional chip (4) to perform phase shifting, amplification, and attenuation on the radio frequency signal through the low-frequency signal, and to control the power amplifier chip (6) to perform secondary amplification on the radio frequency signal.

2. The C-band dual-channel transmitting multifunctional module based on HTCC packaging according to claim 1, characterized in that: The multifunctional chip (4) includes a single-pole single-throw switch circuit, a digitally controlled phase shifter, a small signal amplifier, and a digitally controlled attenuator connected in sequence; The single-pole single-throw switch circuits of the two multifunctional chips (4) are used to respectively receive the two RF signals output by the power divider (3) and control the on-off thereof; the digitally controlled phase shifter is used to shift the phase of the RF signal; the small signal amplifier is used to amplify the RF signal to serve as a pre-stage driver for the power amplifier chip (6); and the digitally controlled attenuator is used to attenuate the RF signal and then output it.

3. The C-band dual-channel transmitting multifunctional module based on HTCC packaging according to claim 1, characterized in that: The monitoring unit (7) includes two couplers (71), two detectors (72), and a comparator (73). The coupling ends of the two couplers (71) are respectively connected to the input ends of the two detectors (72), and the output ends of the two detectors (72) are respectively connected to the two input ends of the comparator (73). The two couplers (71) are used to couple a portion of the radio frequency signals output by the two power amplifier chips (6) to the detector (72), the detector (72) is used to detect the radio frequency signals, and the comparator (73) is used to compare the two detected signals with the threshold voltage and output a TTL signal.

4. The C-band dual-channel transmitting multifunctional module based on HTCC packaging according to claim 2, characterized in that: The control unit (8) includes two cascaded serial-to-parallel chips (81), two power modulation chips (82), an OR gate circuit (83), and a driving component (84). The output end of the serial-to-parallel chip (81) is respectively connected to the control end of the single-pole single-throw switch circuit, the digitally controlled phase shifter, and the digitally controlled attenuator in the corresponding multifunctional chip, and the input end of the OR gate circuit (83) and the corresponding power modulation chip (82). The output end of the power modulation chip (82) is connected to the control end of the amplifier in the corresponding multifunctional chip (4). The output end of the OR gate circuit (83) is connected to the input end of the driving component (84). The output end of the driving component (84) is respectively connected to the control end of the two power amplifier chips (6). The serial-to-parallel chip (81) is used to receive a low-frequency signal, convert it into three differential signals and one PTC signal, and output them; the single-pole single-throw switch is also used to receive a part of the differential signal and control the on-off according to the differential signal; the digitally controlled phase shifter is also used to receive a part of the differential signal and control the phase shift amount of the radio frequency signal according to the differential signal; the digitally controlled attenuator is also used to receive a part of the differential signal and control the attenuation amount of the radio frequency signal according to the differential signal; the power modulation chip (82) is used to receive the PTC signal and control the power on and off of the small signal amplifier in the multifunctional chip (4) according to the PTC signal; the OR gate circuit (83) is used to receive two PTC signals and output them after performing an OR operation on the two PTC signals; the driving component (84) modulates the power of the two power amplifier chips (6) according to the signal output by the OR gate circuit (83).

5. The C-band dual-channel transmitting multifunctional module based on HTCC packaging according to claim 1, characterized in that: The HTCC multilayer board (2) is arranged in the housing (1).

6. The C-band dual-channel transmitting multifunctional module based on HTCC packaging according to claim 1, characterized in that: The housing (1) comprises a first carrier (11), a surrounding frame (12), a cover plate (13), and a second carrier (14); the HTCC multilayer board (2) is sintered on the first carrier (11); the surrounding frame (12) is sintered on the HTCC multilayer board (2); the cover plate (13) is welded to the upper end of the surrounding frame (12) in parallel; the HTCC multilayer board (2) is grooved at a position corresponding to the power amplifier chip (6); the second carrier (14) is arranged in the groove and welded to the first carrier (11).

7. The C-band dual-channel transmitting multifunctional module based on HTCC packaging according to claim 6, characterized in that: The first carrier plate (11) is made of copper-molybdenum-copper-copper laminate, the HTCC multilayer plate (2) is made of alumina, the second carrier plate (14) is made of molybdenum-copper, and the surrounding frame (12) and the cover plate (13) are both made of Kovar alloy.

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