Electrode grid line adhesive force enhancing structure and heterojunction battery with electrode grid line adhesive force enhancing structure

Abstract

The utility model relates to the technical field of solar cells, in particular to an electrode grid line adhesive force enhancing structure and a heterojunction cell with the electrode grid line adhesive force enhancing structure, which comprise a plurality of micron columns, and the micron columns are positioned at the contact positions of electrode grid lines and suede surfaces and are positioned on pyramid structures of the suede surfaces. The micron columns are arranged at the contact positions of the electrode grid lines and the suede, the micron columns can increase the contact area of the suede and the electrode grid lines, the adhesive force of the electrode grid lines is improved, and the technical problem that the electrode grid lines are prone to falling off is solved. And by arranging a plurality of micron columns, the adhesive force between the electrode grid lines and the suede can be further improved, and the electrode grid lines are prevented from falling off.

Description

Technical Field

[0001] The utility model relates to the technical field of solar cells, in particular to an electrode grid line adhesion enhancement structure and a heterojunction battery having the same. Background Art

[0002] The back-side polishing process used in heterojunction cells can increase the internal reflection on the back of the cell, allowing light to return to the cell for reuse and improve light utilization. The short-circuit current is thereby increased, thereby improving the cell conversion efficiency.

[0003] Since the heterojunction silver paste is a low-temperature paste and uses a low-temperature sintering process, it is significantly different from the high-temperature system. The low-temperature paste uses a resin system to bond the metal powder together and attach it to the TCO transparent conductive film to achieve contact and conductivity. However, after the back of the silicon wafer is polished, the velvet surface on the back is a relatively flat surface. When the electrode grid line contacts the flat velvet surface, poor adhesion will occur, and there is a problem of electrode grid line falling off. Utility Model Content

[0004] The purpose of the utility model is to provide an electrode grid line adhesion enhancement structure and a heterojunction battery having the same, so as to solve the technical problems in the prior art.

[0005] The utility model discloses an electrode grid line adhesion enhancement structure, comprising a plurality of micron columns, wherein the micron columns are located at the contact points between the electrode grid lines and a velvet surface, and the micron columns are located on the pyramid structure of the velvet surface.

[0006] Working Principle: By placing micron-pillars at the contact point between the electrode grid lines and the velvet surface, the micron-pillars can increase the contact area with the electrode grid lines, improve the adhesion of the electrode grid lines, and solve the technical problem of the electrode grid lines easily falling off. By placing multiple micron-pillars, the adhesion between the electrode grid lines and the velvet surface can be further improved, ensuring that the electrode grid lines will not fall off.

[0007] Furthermore, the cross section of the micron column is elliptical or triangular.

[0008] By setting the cross section of the micron column to be elliptical or triangular, the contact area with the electrode grid line can be increased and the adhesion can be improved.

[0009] Furthermore, the height of the micron column is 2-5 microns.

[0010] Furthermore, the height of the micron column is 2-3 microns.

[0011] Furthermore, the width of the micron column is 2-3 microns.

[0012] Furthermore, 4-10 micrometer columns are evenly arranged in the same cross section of the electrode grid line.

[0013] By arranging at least 4 micrometer columns in the same cross section of the electrode grid line, the stability of the electrode grid line can be ensured to the greatest extent.

[0014] Furthermore, the micron column is tin or silver.

[0015] A heterojunction battery has the above-mentioned grid line anti-detachment structure.

[0016] Furthermore, the back surface of the battery is a pyramid velvet surface where it contacts the electrode grid lines, and the rest is a flat velvet surface, and the pyramid velvet surface is provided with the micron columns.

[0017] By arranging the pyramid velvet structure and the flat velvet structure to coexist and adding micron columns in the pyramid velvet structure area, not only the problem of poor adhesion and easy falling off of the electrode grid line is solved, but the electrode adhesion is further improved. At the same time, the flat velvet surface improves the photoelectric conversion efficiency.

[0018] Furthermore, the battery further comprises a silicon wafer, and an amorphous layer, a microcrystalline layer and a conductive film layer are sequentially arranged in a direction away from the silicon wafer.

[0019] Furthermore, the micron columns are arranged on the conductive film layer.

[0020] Furthermore, the microcrystalline layer on the front side of the battery is an N-doped microcrystalline layer, and the microcrystalline layer on the back side of the battery is a P-doped microcrystalline layer.

[0021] By providing the N-doped microcrystalline layer and the P-doped microcrystalline layer, the transmittance and conductivity of the microcrystalline layer can be improved.

[0022] Compared with the prior art, the present invention has the following beneficial effects:

[0023] 1. By setting micron columns at the contact point between the electrode grid lines and the velvet surface, the micron columns can increase the contact area with the electrode grid lines, improve the adhesion of the electrode grid lines, and solve the technical problem of the electrode grid lines easily falling off;

[0024] 2. By setting up multiple micron columns, the adhesion between the electrode grid lines and the suede surface can be further improved to ensure that the electrode grid lines will not fall off;

[0025] 3. By setting the cross-section of the micron column to an elliptical or triangular shape, the contact area with the electrode grid line can be increased to improve adhesion;

[0026] 4. By arranging the pyramid velvet structure and the flat velvet structure to coexist and adding micron columns in the pyramid velvet structure area, not only the problem of poor adhesion and easy falling off of the electrode grid line is solved, but also the electrode adhesion is further improved. At the same time, the flat velvet surface improves the photoelectric conversion efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only represent some embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0028] Figure 1 This is a schematic diagram of the grid line anti-slip structure of the utility model.

[0029] In the above drawings, the meanings of the various marks are: 1-micron column, 2-electrode grid line, 3-pyramid velvet surface, 4-flat velvet surface, 5-silicon wafer, 6-amorphous layer, 7-microcrystalline layer, 8-conductive film layer. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solutions and advantages of the implementation methods of the present invention clearer, the technical solutions in the implementation methods of the present invention will be clearly and completely described below in combination with the drawings in the implementation methods of the present invention. Obviously, the described implementation methods are only part of the implementation methods of the present invention, not all of the implementation methods.

[0031] Example 1

[0032] The technical solutions adopted in this embodiment are as follows:

[0033] like Figure 1 As shown, an electrode grid line adhesion enhancement structure and a heterojunction battery having the same include a plurality of micron columns 1, wherein the micron columns 1 are located at the contact between the electrode grid line 2 and the velvet surface, and the micron columns 1 are located on the pyramid structure of the velvet surface.

[0034] Working Principle: By providing micron-pillars 1 at the contact point between the electrode grid lines 2 and the velvet surface, the micron-pillars 1 can increase the contact area with the electrode grid lines 2, improve the adhesion of the electrode grid lines 2, and solve the technical problem of the electrode grid lines 2 easily falling off. By providing multiple micron-pillars 1, the adhesion between the electrode grid lines 2 and the velvet surface can be further improved, ensuring that the electrode grid lines 2 will not fall off.

[0035] Example 2

[0036] This embodiment is a preferred embodiment of the present invention, which discloses the following improvements based on the first embodiment: the cross section of the micron column 1 is elliptical, and in some embodiments, the cross section of the micron column 1 is triangular.

[0037] By setting the cross section of the micron pillar 1 to be elliptical or triangular, the contact area with the electrode grid line 2 can be increased and the adhesion can be improved.

[0038] Example 3

[0039] In this embodiment, as a preferred embodiment of the present utility model, the following improvements are disclosed based on embodiment 1: the height of the micron column 1 is 2 microns, the width of the micron column 1 is 2 microns, 7 micron columns 1 are evenly arranged in the same cross section of the electrode grid line 2, and the micron column 1 is tin.

[0040] By arranging at least four micrometer columns 1 in the same cross section of the electrode grid line 2 , the stability of the electrode grid line 2 can be ensured to the greatest extent.

[0041] Example 4

[0042] In this embodiment, as a preferred embodiment of the present utility model, the following improvements are disclosed based on embodiment 1: the height of the micron column 1 is 3 microns, the width of the micron column 1 is 3 microns, and four micron columns 1 are evenly arranged in the same cross section of the electrode grid line 2, and the micron column 1 is silver.

[0043] Example 5

[0044] In this embodiment as a preferred embodiment of the present invention, the specific structure is as follows Figure 1 As shown, the following improvement is disclosed based on the embodiment 1: the back of the battery is in contact with the electrode grid line 2 with a pyramid velvet surface 3, and the rest is a flat velvet surface 4, and the pyramid velvet surface 3 is provided with the micron column 1.

[0045] By arranging the pyramid velvet 3 structure and the flat velvet 4 structure to coexist and adding micron columns 1 in the pyramid velvet 3 structure area, not only the problem of poor adhesion and easy falling off of the electrode grid line 2 is solved, but the electrode adhesion is further improved. At the same time, the flat velvet 4 improves the photoelectric conversion efficiency.

[0046] Example 6

[0047] In this embodiment as a preferred embodiment of the present invention, the specific structure is as follows Figure 1 As shown, it discloses the following improvements based on embodiment 5, the battery also includes a silicon wafer 5, and an amorphous layer 6, a microcrystalline layer 7 and a conductive film layer 8 are sequentially arranged away from the silicon wafer 5, the micron column 1 is arranged on the conductive film layer 8, the microcrystalline layer 7 on the front side of the battery is an N-doped microcrystalline layer 7, and the microcrystalline layer 7 on the back side of the battery is a P-doped microcrystalline layer 7.

[0048] By providing the N-doped microcrystalline layer 7 and the P-doped microcrystalline layer 7 , the transmittance and conductivity of the microcrystalline layer 7 can be improved.

[0049] The above are the implementation methods listed in this embodiment, but this embodiment is not limited to the above optional implementation methods. Those skilled in the art can arbitrarily combine the above methods to obtain other various implementation methods. Anyone can derive other various forms of implementation methods based on the inspiration of this embodiment. The above specific implementation methods should not be understood as limiting the scope of protection of this embodiment. The scope of protection of this embodiment shall be based on the definition in the claims, and the description can be used to interpret the claims.

Claims

1. An electrode grid line adhesion enhancement structure, characterized by: It comprises a plurality of micron columns (1), wherein the micron columns (1) are located at the contact point between the electrode grid lines (2) and the velvet surface, and the micron columns (1) are located on the pyramid structure of the velvet surface.

2. The electrode grid line adhesion enhancement structure according to claim 1, characterized in that: The cross section of the micron column (1) is elliptical or triangular.

3. The electrode grid line adhesion enhancement structure according to claim 1, characterized in that: The height of the micron column (1) is 2-5 microns.

4. The electrode grid line adhesion enhancement structure according to claim 3, characterized in that: The height of the micron column (1) is 2-3 microns.

5. The electrode grid line adhesion enhancement structure according to claim 1, characterized in that: The width of the micron column (1) is 2-3 microns.

6. The electrode grid line adhesion enhancement structure according to claim 1, characterized in that: The electrode grid line (2) has 4-10 micrometer columns (1) evenly arranged on the same cross section.

7. The electrode grid line adhesion enhancement structure according to claim 1, characterized in that: The micron column (1) is tin or silver.

8. A heterojunction battery, characterized in that: An electrode grid line adhesion enhancement structure according to any one of claims 1 to 7.

9. The heterojunction battery according to claim 8, characterized in that: The back of the battery is provided with a pyramid velvet surface (3) at a point where it contacts the electrode grid lines (2), and the rest is a flat velvet surface (4). The pyramid velvet surface (3) is provided with the micron columns (1).

10. The heterojunction battery according to claim 8, characterized in that: The battery further comprises a silicon wafer (5), on which an amorphous layer (6), a microcrystalline layer (7) and a conductive film layer (8) are sequentially arranged in a direction away from the silicon wafer (5), and the micron pillars (1) are arranged on the conductive film layer (8).

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