Wavelength conversion assembly and lighting equipment

Abstract

The utility model discloses a wavelength conversion assembly and lighting equipment. The wavelength conversion assembly comprises a heat conduction unit, a reflection unit and a wavelength conversion layer. Wherein the heat conduction unit comprises a heat conduction piece and a heat conduction layer, and one side of the heat conduction piece is provided with a containing cavity; the heat conduction layer is arranged in the containing cavity, and the heat conductivity of the heat conduction layer is larger than that of the heat conduction piece. The reflection unit is arranged on the side, provided with the containing cavity, of the heat conduction piece and stacked on the heat conduction layer. The wavelength conversion layer is arranged on one side of the reflection unit away from the heat conduction layer. According to the wavelength conversion assembly, the heat conduction layer has high heat conductivity, when the wavelength conversion layer is stacked on the heat conduction layer, the heat conduction layer can rapidly conduct away heat generated by irradiation of exciting light, the heat conduction rate between the wavelength conversion layer and the heat conduction piece is increased, and therefore the wavelength conversion assembly has good heat dissipation performance.

Description

Technical Field

[0001] The present application relates to the field of laser lighting technology, and more specifically, to a wavelength conversion component and a lighting device. Background Art

[0002] In the existing field of laser lighting technology, a lighting method of laser excitation of fluorescence is generally adopted. For example, blue laser is used to excite yellow fluorescence, which can be mixed to form white light.

[0003] Since laser light sources generate strong thermal effects during operation, in order to ensure the luminous efficiency and operating stability of lighting equipment, the wavelength conversion component needs to have excellent heat dissipation performance and high-temperature stability.

[0004] However, in a fixed wavelength conversion component, there is a problem of low heat conduction rate between the phosphor sheet and the substrate, resulting in poor heat dissipation performance of the wavelength conversion component. Utility Model Content

[0005] Embodiments of the present application provide a wavelength conversion component and a lighting device.

[0006] According to a first aspect of the present application, embodiments of the present application provide a wavelength conversion component, comprising a heat-conducting unit, a reflective unit, and a wavelength conversion layer. The heat-conducting unit comprises a heat-conducting member and a heat-conducting layer, wherein a receiving cavity is provided on one side of the heat-conducting member; the heat-conducting layer is disposed within the receiving cavity, and the thermal conductivity of the heat-conducting layer is greater than that of the heat-conducting member. The reflective unit is disposed on the side of the heat-conducting member where the receiving cavity is provided, and is superimposed on the heat-conducting layer. The wavelength conversion layer is disposed on the side of the reflective unit facing away from the heat-conducting layer.

[0007] In some possible embodiments, the heat conducting member is a metal substrate or a ceramic substrate; the heat conducting layer includes a metal substrate layer, and the metal substrate layer is doped with diamond particles.

[0008] In some possible embodiments, the diamond particles include first-size particles and second-size particles, and the average particle size of the first-size particles is greater than the average particle size of the second-size particles; wherein the ratio of the number of the first-size particles to the second-size particles is greater than or equal to 2 and less than or equal to 18.

[0009] In some possible embodiments, the average particle size of the first size particles is greater than or equal to 20 μm and less than or equal to 50 μm; the average particle size of the second size particles is greater than or equal to 0.5 μm and less than or equal to 10 μm.

[0010] In some possible embodiments, a heat-conducting side is provided on the side of the heat-conducting layer facing the reflective unit, and the reflective unit is stacked between the heat-conducting side and the wavelength conversion layer; at least part of the diamond particles are exposed on the heat-conducting side to be in direct contact with the reflective unit; and among the diamond particles in direct contact with the reflective unit, the ratio of the number of first-size particles to the number of second-size particles is greater than or equal to 1.

[0011] In some possible embodiments, the heat conducting member is a copper substrate, and the metal substrate layer is a copper substrate layer.

[0012] In some possible embodiments, the reflective unit includes a reflective layer and a transition layer, the reflective layer is disposed on one side of the wavelength conversion layer; and the transition layer is plated between the heat conductive layer and the reflective layer.

[0013] In some possible embodiments, the thickness of the reflective layer is greater than or equal to 15 nm and less than or equal to 50 nm; or / and the thickness of the transition layer is greater than or equal to 10 nm and less than or equal to 50 nm.

[0014] In some possible embodiments, the wavelength conversion layer is a fluorescent sheet, and the thickness of the fluorescent sheet is greater than or equal to 0.3 mm and less than or equal to 1.5 mm.

[0015] According to a second aspect of the present application, embodiments of the present application further provide an illumination device comprising a light source and the aforementioned wavelength conversion component, wherein the light source is configured to generate excitation light. The wavelength conversion component is disposed in an optical path of the excitation light and is configured to convert the excitation light into stimulated light.

[0016] The present application provides a wavelength conversion component and a lighting device, wherein the wavelength conversion component includes a heat-conducting unit, a reflective unit, and a wavelength conversion layer. The heat-conducting unit includes a heat-conducting member and a heat-conducting layer, wherein a receiving cavity is provided on one side of the heat-conducting member, the heat-conducting layer is disposed within the receiving cavity, and the reflective unit and the wavelength conversion layer are sequentially stacked on the heat-conducting layer. Specifically, the thermal conductivity of the heat-conducting layer is greater than the thermal conductivity of the heat-conducting member. When the wavelength conversion layer is stacked on the heat-conducting layer, the heat-conducting layer with a higher thermal conductivity can quickly conduct away the heat generated by the excitation light irradiation, thereby improving the heat conduction rate between the wavelength conversion layer and the heat-conducting member, so that the wavelength conversion component has better heat dissipation performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0018] Figure 1It is a structural diagram of the lighting device provided in an embodiment of the present application.

[0019] Figure 2 yes Figure 1 A schematic diagram of the structure of a wavelength conversion component in a lighting device is shown.

[0020] Figure 3 yes Figure 1 Another structural schematic diagram of a wavelength conversion component in a lighting device is shown. DETAILED DESCRIPTION

[0021] In order to enable those skilled in the art to better understand the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0022] See also Figure 1 The present invention provides a wavelength conversion component 100 and an illumination device 200 equipped with the wavelength conversion component 100. The illumination device 200 is a device for generating illumination light. For example, the illumination device 200 may be a laser light, a stage light, a car light, a searchlight, or the like.

[0023] Specifically, the lighting device 200 may include a light source 210 and a wavelength conversion component 100, wherein the light source 210 is used to generate excitation light L. The excitation light L serves as the excitation light of the wavelength conversion component 100. For example, the excitation light L may be a blue laser, and the wavelength of the blue laser may be 450nm, 455nm, etc. Of course, in some other possible embodiments, the excitation light L may also be a violet laser, a deep blue laser, etc. Specifically, the light source 210 may be a laser generator, such as a gas laser generator, a solid-state laser generator, a semiconductor laser generator, etc. The number of laser generators may be multiple to achieve high-power lighting of the lighting device 200.

[0024] In some other possible embodiments, the light source 210 may also be an LED light, for example, a blue LED light. In this case, the excitation light L is LED light.

[0025] The wavelength conversion component 100 is adapted to be positioned in the optical path of the excitation light L and is configured to convert the excitation light L into a stimulated light F, thereby enabling the illumination device 200 to generate illumination light. The stimulated light F may be fluorescent light. Specifically, the wavelength conversion component 100 in this embodiment employs a reflective structure to improve the excitation efficiency of the stimulated light F. Of course, in other possible embodiments, the wavelength conversion component 100 may also employ a transmissive structure, which is not specifically limited in this embodiment.

[0026] It is easy to understand that as the excitation light L passes through the wavelength conversion assembly 100, some of the excitation light L may not be converted into the converted light F (i.e., fluorescent light). This unconverted light will combine with the converted light F to form the illumination light emitted to the outside world. For example, when blue laser light excites yellow fluorescent light, some of the blue laser light will not be converted into yellow fluorescent light. This portion of the blue laser light will combine with the excited yellow fluorescent light to form white light (i.e., illumination light).

[0027] See also Figure 2 , the wavelength conversion component 100 may include a heat-conducting unit 10, a reflecting unit 30 and a wavelength conversion layer 50. The heat-conducting unit 10 may include a heat-conducting part 120 and a heat-conducting layer 140. A receiving cavity 1210 is provided on one side of the heat-conducting part 120, and the heat-conducting layer 140 is arranged in the receiving cavity 1210. The reflecting unit 30 is arranged on the side of the heat-conducting part 120 where the receiving cavity 1210 is provided, and is superimposed on the heat-conducting layer 140. The wavelength conversion layer 50 is arranged on the side of the reflecting unit 30 away from the heat-conducting layer 140. Therefore, the reflecting unit 30 and the wavelength conversion layer 50 in this embodiment are sequentially superimposed on the heat-conducting layer 140. For example, the heat-conducting layer 140 may be embedded in the receiving cavity 1210 so that the heat-conducting part 120 and the heat-conducting layer 140 are fixedly connected, thereby improving the connection reliability of the overall structure of the wavelength conversion component 100.

[0028] Specifically, the thermal conductivity of the heat-conducting layer 140 is greater than the thermal conductivity of the heat-conducting member 120. When the wavelength conversion layer 50 is stacked on the heat-conducting layer 140, the heat-conducting layer 140 can quickly conduct away the heat generated by the excitation light irradiation, thereby improving the heat conduction rate between the wavelength conversion layer 50 and the heat-conducting member 120, so that the wavelength conversion component 100 has better heat dissipation performance and working reliability.

[0029] The specific implementation of the wavelength conversion component 100 is described below.

[0030] In this embodiment, the heat conducting unit 10 is generally sheet-shaped and serves to secure and support the reflective unit 30 and the wavelength conversion layer 50. Specifically, the heat conducting unit 10 may include a heat conducting member 120 and a heat conducting layer 140. The heat conducting member 120 may be a metal substrate, for example, a copper substrate made of red copper, oxygen-free copper, or a copper alloy, so that the heat conducting member 120 can improve the overall heat dissipation performance of the wavelength conversion assembly 100. In other possible embodiments, the heat conducting member 120 may also be a ceramic substrate, which is not limited in this embodiment.

[0031] In this embodiment, the heat-conducting unit 10 is provided with a receiving cavity 1210 for placing the heat-conducting layer 140. The receiving cavity 1210 is opened on one side of the heat-conducting member 120 and can be roughly located in the central area of ​​the heat-conducting member 120. When the excitation light L is incident on the wavelength conversion component 100, the central area of ​​the heat-conducting member 120 is located on the optical axis corresponding to the excitation light L. Therefore, the "central area" is also a high heat density area on the heat-conducting member 120. Therefore, after the heat-conducting layer 140 is arranged in the receiving cavity 1210, the heat-conducting layer 140 can be in direct contact with the heat source generated by the irradiation of the excitation light L, so that the wavelength conversion component 100 has the advantages of high thermal conductivity and short heat conduction path.

[0032] In this embodiment, the heat-conducting layer 140 may be doped with diamond particles 1430. Since diamond has high thermal conductivity, its thermal conductivity may be greater than or equal to 2000 W / (m*k). Therefore, the heat-conducting layer 140 in this embodiment has a higher thermal conductivity by being doped with diamond particles, and the thermal conductivity of the heat-conducting layer 140 is greater than that of the metal substrate. When the wavelength conversion layer 50 is stacked on the heat-conducting layer 140, the heat-conducting layer 140 can quickly conduct away the heat generated by the excitation light L, thereby increasing the heat conduction rate between the wavelength conversion layer 50 and the heat-conducting member 140. Specifically, the shape of the diamond particles 1430 may be spherical, and the crystal form of the diamond particles 1430 may be α-phase.

[0033] In some possible embodiments, see Figure 3 Diamond particles 1430 may include first-size particles 1432 and second-size particles 1434. The average particle size of first-size particles 1432 is larger than the average particle size of second-size particles 1434. Specifically, the average particle size of first-size particles 1432 is greater than or equal to 20 μm and less than or equal to 50 μm. For example, the average particle size of first-size particles 1432 may be 20 μm, 30 μm, 40 μm, 50 μm, etc. The average particle size of second-size particles 1434 is greater than or equal to 0.5 μm and less than or equal to 10 μm. For example, the average particle size of second-size particles 1434 may be 0.5 μm, 2 μm, 5 μm, 10 μm, etc.

[0034] Therefore, the thermal conductive layer 140 in this embodiment is doped with diamond particles 1430 of different particle sizes so that the diamond particles 1430 of smaller particle size (i.e., the second size particles 1434) can be filled in the gaps formed by the diamond particles 1430 of larger particle size (i.e., the first size particles 1432), thereby increasing the overall filling density of the diamond particles 1430 and making the thermal conductive layer 140 have better thermal conductivity.

[0035] Specifically, the ratio of the number of first-size particles 1432 to the number of second-size particles 1434 is greater than or equal to 2 and less than or equal to 18. For example, the ratio of the number of first-size particles 1432 to the number of second-size particles 1434 can be 2, 5, 8, 12, 15, 18, and so on. Therefore, in the heat-conducting layer 140, the number of larger-sized diamond particles 1430 (i.e., first-size particles 1432) exceeds half. Because larger-sized diamond particles 1430 have better thermal conductivity, the heat-conducting layer 140 can more efficiently and quickly conduct heat away from the wavelength conversion layer 50.

[0036] In some possible embodiments, the heat-conducting layer 140 has a heat-conducting side 1401 on a side facing the reflective unit 30, and the reflective unit 30 is stacked between the heat-conducting side 1401 and the wavelength conversion layer 50. At least a portion of the diamond particles 1430 are exposed on the heat-conducting side 1401 to directly contact the reflective unit 30. Specifically, among the diamond particles 1430 in direct contact with the reflective unit 30, the ratio of the number of first-sized particles 1432 to the number of second-sized particles 1434 is greater than or equal to 1. For example, the ratio of the number of first-sized particles 1432 to the number of second-sized particles 1434 can be 1, 2, 4, 8, 10, and so on.

[0037] Therefore, among the diamond particles 1430 in contact between the heat-conducting layer 140 and the reflective unit 30, the number of larger diamond particles 1430 (i.e., first-size particles 1432) exceeds half. Since larger diamond particles 1430 have better thermal conductivity, the heat-conducting layer 140 can more efficiently and quickly conduct heat away from the wavelength conversion layer 50.

[0038] exist Figure 3 In the illustrated embodiment, the thermally conductive layer 140 may further include a metal substrate layer 1450, which is doped with diamond particles 1430. The metal substrate layer 1450 serves to secure the diamond particles 1430. Specifically, the metal substrate layer 1450 may be a copper substrate layer, which may be formed by sintering copper powder under high temperature and high pressure.

[0039] As an implementation method, researchers can evenly mix the first-size particles 1432, the second-size particles 1434, and the copper powder and bury them in the accommodating cavity 1210, and then place the thermal conductor 120 into the vacuum cavity, so that it can be fired under high temperature and pressure in a vacuum environment to form a thermal conductive layer 140.

[0040] Specifically, the ratio of first-size particles 1432, second-size particles 1434, and copper powder can be (60-90):(5-30):(5-10), and the mixing method can be roller ball milling. A small amount of anhydrous ethanol can be added as an additive during the mixing process, with the weight of the additive being 2% to 10% of the total weight of the powder.

[0041] In some possible embodiments, the surface of the diamond particles 1430 is coated with a copper film (not shown in the figure). For example, the copper film can be coated on the surface of the diamond particles 1430 by electrochemical methods, vacuum evaporation, etc. to improve the reliability of the fixed connection between the diamond particles 1430 and the metal substrate layer 1450.

[0042] In this embodiment, the reflective unit 30 is connected between the heat conducting unit 10 and the wavelength conversion layer 50 and is used to reflect light. In other words, the wavelength conversion component 100 in this embodiment adopts a reflective structure.

[0043] In one aspect, the reflective unit 30 can reflect the excitation light L. Specifically, during the process of the excitation light L passing through the wavelength conversion layer 50, some of the light may not be converted into fluorescent light (i.e., converted light F). In this case, this part of the light is reflected back to the wavelength conversion layer 50 by the reflective unit 30 to achieve secondary excitation of the converted light F.

[0044] Therefore, the reflective wavelength conversion component 100 has a higher fluorescence excitation efficiency than the transmissive wavelength conversion component 100. Of course, it is not difficult to understand that during the process of the excitation light L passing through the wavelength conversion layer 50 twice, some light may still not be converted into fluorescence. This light will be emitted to the outside world and combined with the converted light F to generate illumination light.

[0045] On the other hand, the reflective unit 30 can reflect the converted light F. Specifically, because the converted light F is Lambertian light, a portion of the converted light F will be emitted toward one side of the reflective unit 30. Specifically, this portion of the converted light F emitted toward one side of the reflective unit 30 can account for 50% of the total converted light F generated by the wavelength conversion layer 50, and can even account for more than 60%. Therefore, the reflective unit 30 in this embodiment also serves to reflect this portion of light to improve the light extraction efficiency of the converted light F.

[0046] exist Figure 3In the illustrated embodiment, the reflective unit 30 may include a reflective layer 320 and a transition layer 340. The reflective layer 320 is disposed on one side of the wavelength conversion layer 50 and is used to reflect light. Specifically, the reflective layer 320 may be a high-purity silver layer, a silver-aluminum alloy layer, or the like, and may be deposited on one side of the wavelength conversion layer 50 via magnetron sputtering or vacuum evaporation. Specifically, the thickness of the reflective layer 320 is greater than or equal to 15 nm and less than or equal to 50 nm. For example, the thickness of the reflective layer 320 may be 15 nm, 20 nm, 30 nm, 40 nm, 50 nm, or the like.

[0047] The transition layer 340 is disposed between the thermally conductive layer 140 and the reflective layer 320. It serves to improve the bondability between the thermally conductive layer 140 and the wavelength conversion layer 50, thereby enhancing the adhesion and bonding reliability of the reflective layer 320. Specifically, the transition layer 340 may be a silver layer, which also increases the reflectivity of the reflective unit 30. Specifically, the thickness of the transition layer 340 is greater than or equal to 10 nm and less than or equal to 50 nm. For example, the thickness of the transition layer 340 may be 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, and so on.

[0048] Silver or aluminum is selected as the main material of the reflective layer 320 and the transition layer 340 because silver or aluminum as metal materials can also conduct heat, thereby improving the heat conduction efficiency of the entire wavelength conversion component 100.

[0049] In this embodiment, the wavelength conversion layer 50 is located on the side of the reflective unit 30 away from the heat conducting unit 10 and is disposed on the optical path of the excitation light L to convert the excitation light L into converted light F. Specifically, the wavelength conversion layer 50 may be a fluorescent sheet.

[0050] In some possible embodiments, the wavelength conversion layer 50 may be a fluorescent ceramic sheet, such as a phosphor-alumina composite ceramic, a pure phase fluorescent ceramic, or a single crystal fluorescent ceramic, etc. In other possible embodiments, the wavelength conversion layer 50 may be a fluorescent glass sheet, such as a phosphor-glass powder fluorescent sheet.

[0051] In some possible embodiments, the thickness of the phosphor sheet is greater than or equal to 0.3 mm and less than or equal to 1.5 mm. For example, the thickness of the phosphor sheet can be 0.3 mm, 0.6 mm, 0.9 mm, 1.2 mm, 1.5 mm, etc. Therefore, the phosphor sheet in this embodiment has a certain thickness, which can increase the overall strength of the phosphor sheet and prevent cracking during the preparation process of the wavelength conversion component 100.

[0052] As an implementation, researchers can grind and polish one side of the phosphor sheet to a surface roughness Ra of less than or equal to 3 nm. Then, a layer of silver is deposited on this side using magnetron sputtering or vacuum evaporation to form a reflective layer 320. A layer of silver is also deposited on the surface of the thermal conductive layer 140 to form a transition layer 340. Finally, the side of the phosphor sheet coated with the reflective layer 320 is placed on the surface of the thermal conductive layer 140 and placed in a vacuum chamber. It is then fired under high temperature and pressure in a vacuum environment to form the wavelength conversion component 100.

[0053] The present embodiment provides a wavelength conversion component 100 and a lighting device 200 equipped with the wavelength conversion component 100. The wavelength conversion component 100 may include a heat-conducting unit 10, a reflective unit 30, and a wavelength conversion layer 50. The heat-conducting unit 10 may include a heat-conducting member 120 and a heat-conducting layer 140. A receiving cavity 1210 is defined on one side of the heat-conducting member 120, and the heat-conducting layer 140 is disposed within the receiving cavity 1210. The reflective unit 30 is disposed on the side of the heat-conducting member 120 where the receiving cavity 1210 is defined, and is stacked on the heat-conducting layer 140. The wavelength conversion layer 50 is disposed on the side of the reflective unit 30 facing away from the heat-conducting layer 140. Therefore, in this embodiment, the reflective unit 30 and the wavelength conversion layer 50 are sequentially stacked on the heat-conducting layer 140.

[0054] Specifically, the thermal conductivity of the heat-conducting layer 140 is greater than the thermal conductivity of the heat-conducting member 120. When the wavelength conversion layer 50 is stacked on the heat-conducting layer 140, the heat-conducting layer 140 can quickly conduct away the heat generated by the excitation light irradiation, thereby improving the heat conduction rate between the wavelength conversion layer 50 and the heat-conducting member 120, so that the wavelength conversion component 100 has better heat dissipation performance and working reliability.

[0055] In the specification of this application, certain words are used to refer to specific components in the specification and claims. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The specification and claims do not use the difference in name as a way to distinguish components, but use the difference in function of the components as the criterion for distinction. For example, "including" mentioned throughout the specification and claims is an open term and should be interpreted as "including but not limited to"; "substantially" means that those skilled in the art can solve the technical problem within a certain error range and basically achieve the technical effect.

[0056] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "inside", etc. indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings. They are only used to simplify the description for the convenience of describing this application, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they should not be understood as limitations on this application.

[0057] In this application, unless otherwise expressly specified or limited, terms such as "mounted," "connected," "connect," and "fixed" should be interpreted broadly. For example, these terms may refer to fixed, removable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediary; internal communication between two components; or mere surface contact. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0058] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0059] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. Throughout the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0060] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A wavelength conversion component, characterized in that: include: The heat conduction unit comprises a heat conduction member and a heat conduction layer, wherein a receiving cavity is provided on one side of the heat conduction member; the heat conduction layer is disposed in the receiving cavity, and the heat conductivity of the heat conduction layer is greater than the heat conductivity of the heat conduction member; a reflecting unit, disposed on a side of the heat conducting member where the accommodating cavity is provided, and stacked on the heat conducting layer; as well as The wavelength conversion layer is arranged on a side of the reflective unit away from the heat conducting layer.

2. The wavelength conversion component according to claim 1, wherein: The heat conducting member is a metal substrate or a ceramic substrate; The heat-conducting layer includes a metal substrate layer, and the metal substrate layer is doped with diamond particles.

3. The wavelength conversion component according to claim 2, wherein: The diamond particles include first-size particles and second-size particles, the average particle size of the first-size particles is larger than the average particle size of the second-size particles; wherein the ratio of the number of the first-size particles to the second-size particles is greater than or equal to 2 and less than or equal to 18.

4. The wavelength conversion component according to claim 3, characterized in that The average particle size of the first size particles is greater than or equal to 20 μm and less than or equal to 50 μm; The average particle size of the second-sized particles is greater than or equal to 0.5 μm and less than or equal to 10 μm.

5. The wavelength conversion component according to claim 3, wherein: The heat-conducting layer is provided with a heat-conducting side on a side facing the reflecting unit, and the reflecting unit is stacked between the heat-conducting side and the wavelength conversion layer; At least part of the diamond particles are exposed on the heat-conducting side to be in direct contact with the reflective unit; among the diamond particles in direct contact with the reflective unit, the ratio of the number of the first-sized particles to the second-sized particles is greater than or equal to 1.

6. The wavelength conversion component according to claim 2, wherein: The heat conducting member is a copper substrate, and the metal substrate layer is a copper substrate layer.

7. The wavelength conversion component according to any one of claims 1 to 6, characterized in that: The reflective unit includes a reflective layer and a transition layer, and the reflective layer is arranged on one side of the wavelength conversion layer; The transition layer is plated between the heat-conducting layer and the reflective layer.

8. The wavelength conversion component according to claim 7, wherein: The thickness of the reflective layer is greater than or equal to 15 nm and less than or equal to 50 nm; or / and The thickness of the transition layer is greater than or equal to 10 nm and less than or equal to 50 nm.

9. The wavelength conversion component according to any one of claims 1 to 6, characterized in that: The wavelength conversion layer is a fluorescent sheet, and the thickness of the fluorescent sheet is greater than or equal to 0.3 mm and less than or equal to 1.5 mm.

10. A lighting device, characterized in that: include: a light source for generating excitation light; as well as The wavelength conversion component according to any one of claims 1 to 9, wherein the wavelength conversion component is arranged in the optical path of the excitation light, and is used to convert the excitation light into the converted light.

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