Touch screen grid conductive structure, touch module, sensor and photomask

Abstract

The utility model provides a touch screen grid conductive structure, a first metal wire comprises a first main body part far away from an intersection point, the first metal wire further comprises at least one of a first end part close to the intersection point or a first bending part located between the first end part and the first main body part, the line width of the first end part is smaller than that of the first main body part, and the line width of the first bending part is smaller than that of the first main body part. The first bending part is arranged in a bending manner, and the second metal wire comprises a second main body part far away from the intersection point, so that the sum of two adjacent included angles formed between the first metal wire and the second metal wire is larger than 180 degrees. This is achieved due to the combined action of the design of the photomask and the manufacturing process. As the line width of the metal line at the intersection is reduced or bent, a relatively large flow inlet can be provided for the etching liquid. Meanwhile, due to the fact that the metal wires are thinned and light transmission is incomplete during exposure, curing of a dry film is insufficient, subsequent excessive development is caused, the etching area is further enlarged, more metal is etched, and therefore the area of the node is reduced.

Description

Technical Field

[0001] The present disclosure relates to the field of grid conductive technology, and in particular, to a touch screen grid conductive structure, a touch module, a sensor, and a light mask. Background Art

[0002] The emergence of grid conductive structures, especially metal grid conductive structures, not only has good conductivity for electronic devices, but also has fast response speed, high accuracy and good display effect.

[0003] However, a large node (hereinafter referred to as an intersection) is formed at the intersection of two metal wires, which is not only prone to reflection or black spots, affecting the display effect of the electronic device, but also causes signal interference and noise, affecting the sensitivity and response speed of the electronic device, and giving users a bad user experience. Utility Model Content

[0004] In view of this, the present disclosure provides a touch screen grid conductive structure, a touch module, a sensor and a light mask, aiming to improve the problem that nodes in the grid conductive structure significantly affect the user experience.

[0005] In a first aspect, the present disclosure provides a touch screen grid conductive structure, comprising first metal wires and second metal wires arranged in the same layer and interconnected, the first metal wires and the second metal wires being arranged in an interlaced manner to form an intersection, the first metal wires comprising a first main portion remote from the intersection, the first metal wires further comprising at least one of a first end portion proximate to the intersection or a first bent portion located between the first end portion and the first main portion, the line width of the first end portion being smaller than that of the first main portion, and the first bent portion being arranged in a curved manner, and the second metal wires comprising a second main portion remote from the intersection, such that the sum of two adjacent angles formed between the first metal wires and the second metal wires is greater than 180°.

[0006] This is because the design of the mask and the manufacturing process work together to obtain the sum of the two adjacent angles formed between the metal wires to be greater than 180°. Specifically, since the line width of the metal wires is reduced or bent at the intersection, it is beneficial to provide a relatively large flow inlet for the etching liquid, thereby reducing the flow resistance of the etching liquid, so that the flow path of the etching liquid often becomes curved. At the same time, because the metal wires become thinner, it will cause incomplete light transmission during exposure, resulting in insufficient curing of the dry film, leading to subsequent over-development, causing the etching area to further expand, further improving the etching ability near the intersection, making the etching path near the intersection further bend and increase, more metal is etched, thereby reducing the area at the node.

[0007] In a second aspect, the present disclosure provides a touch module comprising the above-mentioned touch screen grid conductive structure.

[0008] In a third aspect, the present disclosure provides a sensor comprising the above-mentioned touch screen grid conductive structure.

[0009] In a fourth aspect, the present disclosure provides a light mask comprising the above-mentioned touch screen grid conductive structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] It should be understood that the following drawings only depict certain embodiments of the present disclosure and should not be considered limiting of the scope.

[0011] It should be understood that the same or similar reference numerals are used in the drawings to identify the same or similar elements.

[0012] It should be understood that the drawings are merely schematic and that the sizes and proportions of elements in the drawings are not necessarily accurate.

[0013] Figure 1 This is a structural diagram of a grid conductive structure and nodes in the related art.

[0014] Figure 2 for Figure 1 Actual effect diagram and structural diagram of the mid-node.

[0015] Figure 3 A schematic structural diagram of a photomask provided in one embodiment of the present disclosure.

[0016] Figure 4 Based on Figure 3 The actual effect of observing the node under a microscope after the mask is manufactured.

[0017] Figure 5 for Figure 4 Enlarged view of the local structure at the midpoint.

[0018] Figure 6 A schematic structural diagram of a photomask provided in one embodiment of the present disclosure.

[0019] Figure 7 Based on Figure 6 The actual effect of observing the node under a microscope after the mask is manufactured.

[0020] Figure 8 A schematic structural diagram of a photomask provided in one embodiment of the present disclosure.

[0021] Figure 9 Based on Figure 8 The actual effect of observing the node under a microscope after the mask is manufactured.

[0022] Figure 10 A schematic structural diagram of a photomask provided in one embodiment of the present disclosure.

[0023] Figure 11 for Figure 10 The actual effect of observing the node under a microscope after the mask is manufactured.

[0024] Figure 12 This is a flow chart of a method for preparing a touch screen grid conductive structure provided by one embodiment of the present disclosure.

[0025] Figure 13 for Figure 12 FIG. 1 is an intermediate structure diagram corresponding to step S10 in the preparation process of the touch screen grid conductive structure.

[0026] Figure 14 for Figure 12 FIG. 4 is an intermediate structure diagram corresponding to step S20 in the preparation process of the touch screen grid conductive structure.

[0027] Figure 15 for Figure 12 FIG. 4 is an intermediate structure diagram corresponding to step S30 in the preparation process of the touch screen grid conductive structure.

[0028] Figure 16 for Figure 12 FIG. 4 is an intermediate structure diagram corresponding to step S40 in the preparation process of the touch screen grid conductive structure.

[0029] Figure 17 for Figure 12 FIG. 4 is an intermediate structure diagram corresponding to step S50 in the preparation process of the touch screen grid conductive structure. DETAILED DESCRIPTION

[0030] For ease of understanding, the mesh conductive structure provided by the embodiments of the present disclosure is illustrated below in conjunction with specific embodiments and accompanying drawings. It should be understood that the present disclosure can be implemented in a variety of ways and should not be construed as being limited to the embodiments described herein. The embodiments described herein are merely for a more thorough and clear understanding of the present disclosure.

[0031] An embodiment of the present disclosure provides a touch screen grid conductive structure 100 (hereinafter referred to as the grid conductive structure), which is widely used in electronic devices. For example, the grid conductive structure 100 can be applied to a touch module, a display panel, or a sensor. For ease of understanding, the structure of the grid conductive structure 100 is illustrated below. It should be understood that the overall structure of the grid conductive structure 100 should not be limited to the following description. For example, one or several of the elements introduced below can be omitted, or can be replaced, and the layout relationship between them can be replaced.

[0032] refer to Figure 1 and Figure 2, the grid conductive structure 100 can include a first metal wire 110 and a second metal wire 120 that are arranged in the same layer and connected to each other. The first metal wire 110 and the second metal wire 120 can be made of the same or different metal wires, for example, copper. The line width and thickness of the first metal wire 110 and the second metal wire 120 can be flexibly designed as needed. For example, if the grid conductive structure is located in the display area, in order to improve the transmittance, the line width of the first metal wire and the second metal wire can be no more than 8μm. Preferably, the line width of the first metal wire and the second metal wire is no less than 3μm and no more than 7μm, for example, 3μm and 5μm, and the thickness is no more than 1μm.

[0033] Continue to refer Figure 1 The first metal wire 110 and the second metal wire 120 are arranged in a staggered manner to form an intersection 130, and an obtuse angle α and an acute angle β are formed between adjacent metal wires. During manufacturing, it was found that a web-like structure ABCD with a larger area would be formed at the intersection 130 (refer to Figure 2 ), the larger webbed structure ABCD will cause certain reflections, seriously affecting the user experience and visual effects, and even seriously affecting the response speed and performance of electronic components.

[0034] Research has found that the formation of nodes in the surface structure occurs because the etching liquid cannot fully contact the metal layer at intersection 130. Further analysis shows that the viscosity of the etching liquid limits its mobility during flow, especially at the sharp angle β of the intersection. The narrow space at the sharp angle β further restricts the flow of the etching liquid, preventing it from effectively penetrating deep into the sharp angle β. This flow restriction leads to the formation of large-scale webbed structures in these areas, affecting the uniformity and quality of etching.

[0035] In order to reduce the area of ​​the webbed structure at the node, refer to Figure 4 and Figure 7 The first metal wire 110 includes a first main body portion 113 away from the intersection 130, and the first metal wire 110 may further include a first end portion 111 close to the intersection 130 (refer to Figure 4 Alternatively, the first metal wire 110 may further include a first bent portion 212 located between the first end portion 211 and the first main portion 113 (see Figure 7 ). Of course, the first metal wire 110 may further include a first end portion 211 of the intersection 130 and a first bent portion 212 located between the first end portion 211 and the first main portion 113 (refer to Figure 7 ). The line width of the first end portion 111 or 211 is smaller than that of the first main body portion 113, and the first curved portion 212 is bent. For example, referring to Figure 4 , d11 = 2 μm (near the intersection 130), d13 = 5 μm. Figure 9For example, the line width of the first metal line 110 is 5 μm, and the width of the node is 1 μm (near the intersection 130 ). The line width may be changed continuously or discontinuously, which is not specifically limited here.

[0036] Continue to refer Figure 4 and Figure 7 The second metal line 120 includes a second main portion 123 away from the intersection 232, so that the sum of two adjacent angles formed between the first metal line and the second metal line is greater than 180°.

[0037] Understandable, reference Figure 4 , γ1 and γ2 are two adjacent angles formed between the first metal wire 110 and the second metal wire 120, respectively, and are formed by the reverse extension lines of the arc. Obviously, the angles of γ1 and γ2 are significantly larger than before the metal wires are changed, and the sum of γ1 and γ2 is greater than 180°. For example, for the first metal wire including the first end, refer to Figure 4 , d21 = 2 μm (near the intersection 130), d23 = 5 μm. For example, for the first metal line including the first bend, refer to Figure 7 , γ is the angle between the first metal wire and the second metal wire. Obviously, γ is significantly larger than that before the first metal wire is bent, so that the sum of the angles is greater than 180°. For example, if the first metal wire includes a first bending portion and a first end portion, refer to Figure 9 The line width of the first end portion 311 near the intersection 133 is 1 μm, and the line width of the first main portion 113 is 5 μm. The angles γ3 and γ4 are significantly larger than before the metal line changes, and the sum of γ3 and γ4 is greater than 180°.

[0038] This is because the design of the mask and the manufacturing process work together to make the sum of the two adjacent angles formed between the metal wires greater than 180°. Specifically, due to the reduced line width or curved design of the metal wires at the intersection, it is beneficial to provide a relatively large flow inlet for the etching liquid, thereby reducing the flow resistance of the etching liquid, so that the flow path of the etching liquid often becomes curved. At the same time, due to the thinning of the metal wires, it will cause incomplete light transmission during exposure, resulting in insufficient curing of the dry film, leading to subsequent over-development, causing the etching area to further expand, further improving the etching ability near the intersection, making the etching path near the intersection further curved and enlarged, so that more metal is etched, which helps to further reduce the area at the node.

[0039] Smaller node areas help reduce the reflectivity of the touchscreen and increase the density of the conductive mesh structure, thereby improving the response rate of the mesh and further enhancing the user experience. Thus, the coordinated design of the photomask structure and the manufacturing process not only optimize the efficiency and effectiveness of the etching process, but also help improve the performance of the conductive mesh structure.

[0040] It is understandable that through reasonable design, only one of the first metal wire 110 and the second metal wire 120 can be thinned or bent to increase the angle formed by the first metal wire and the second metal wire, thereby reducing the area of ​​the node.

[0041] Preferably, the widths of the first metal line and the second metal line are both reduced, which is more conducive to increasing the angle at the node, thereby helping to further reduce the area at the node. In addition, the larger the angle between the first metal line 110 and the second metal line 120, the better the etching effect and the smaller the node area. Figure 4 According to the structure observed under a microscope, the actual area S of the intersection 130 is 47.9 μm. 2 .

[0042] Continue to refer Figure 4 , the length d1 of the orthographic projection of the first end portion 111 of the first metal wire 110 satisfies: 5μm≤d1≤20μm, and the length d2 of the orthographic projection of the second end portion satisfies: 5μm≤d2≤20μm. For example, d1 can be 5μm, 7μm, 10μm, 12μm, 15μm or 20μm, without specific limitation; d2 can be 5μm, 7μm, 10μm, 12μm, 15μm or 20μm, without specific limitation. As an example, the lengths d1 and d2 of the orthographic projections of the first end portion and the second end portion are approximately 6.6μm (refer to Figure 4 ). In order to further obtain a larger angle at the intersection, refer to Figure 7 The length of the orthographic projection of the first bent portion 212 is 0 μm≤L2≤20 μm, the first metal wire 110 and the second metal wire 120 form two intersections 232 , and a distance d78 between the two intersections is not less than 10 μm and not more than 50 μm.

[0043] As an example, see Figure 7 The first main portion 113 includes a first bent portion 212 adjacent to the first end portion 211. The length d75 of the orthographic projection of the first bent portion 212 is ≈ 16 μm. Furthermore, after the first metal line 110 is exposed, developed, and etched, the original node is split into two smaller nodes 232, which reduces the node area. The distance between the two nodes 232 does not change due to processing.

[0044] As a result, the angle γ formed by the bent first metal wire 110 and the second metal wire 120 is significantly larger than before the bend, and the sum of two adjacent angles is greater than 180°. Furthermore, the bend splits a larger area into two smaller nodes, further enhancing the visual effect and user experience.

[0045] Preferably, continue to refer to Figure 7 When the first metal wire is bent, the width of the first end portion 211 and the second end portion 121 is thinner than that of the first main portion 113 and the second main portion 123, and the length d71 of the orthographic projection of the first end portion 211 is approximately 8 μm (wherein the length d71 may be no less than 4.1 μm and no more than 12.3 μm, and the length of the thinning width along the length of the first metal wire may be no less than 5 μm and no more than 15 μm). This significantly increases the angle formed between the first metal wire 110 and the second metal wire 120, and the sum of adjacent angles is greater than 180°.

[0046] refer to Figure 9 In some other embodiments, the first main body 113 of the first metal wire 110 includes a first bend 312 near the first end 311, and the second main body 123 of the second metal wire 120 includes a second bend 122 near the second end 321. In this way, the sum of the two adjacent angles formed between the first metal wire and the second metal wire is greater than 180°, further reducing the area at the node 133, which is conducive to further improving the visual effect and user experience. At this time, the actual area S of the node 133 is 47.4639um 2 .

[0047] Continue to refer Figure 9 The length d1' (d3) of the orthographic projection of the first end 311 of the first metal wire 110 satisfies the following: 11μm ≤ d1' ≤ 17μm, and the length d91 of the orthographic projection of the second end 321 also satisfies the following: 11μm ≤ d91 ≤ 17μm. For example, d3 can be 11μm, 12μm, 13μm, 14μm, 15μm, 16μm, or 17μm, without specific limitations here; d91 can be 11μm, 12μm, 13μm, 14μm, 15μm, 16μm, or 17μm, without specific limitations here. The width L91 near the node 133 can be 10μm to 30μm (including either a single tapered portion, a single curved portion, or both a curved and tapered portion).

[0048] Combine Figure 7 and Figure 9 The length of the orthographic projection of the first curved portion and the length of the orthographic projection of the second curved portion are less than 200 μm, which is not specifically limited here. Figure 7The length d75 of the orthographic projection of the first curved portion is approximately 13.12 μm (the length along its own extension direction is 24 μm). Figure 9 The length d7 of the orthographic projection of the first curved portion is approximately 1.57 μm. It should be noted that the length d7 may be 0 to 20 μm.

[0049] Combine Figure 4 、 Figure 7 、 Figure 9 and Figure 11 In order to reduce the area of ​​the node, the area S of the node 130 should be 30 μm. 2 ≤S≤100μm 2 Too large a node area will bring about a negative visual effect. Too small a node area will make the line width at the connection between the first end and the second end and the node 130 too small, which will easily cause a break in the line, thus seriously affecting the user experience. For example, the area S of the node 130 can be 30μm 2 , 40μm 2 , 50μm 2 , 80μm 2 or 100 μm 2 etc., no specific limitation is given here. For example, refer to Figure 4 The area S of the intersection is 47.9um 2 . refer to Figure 9 , the area S of the intersection 133 is 47.4639um 2 In one example, reference Figure 11 , d can be less than 6μm, d8≈8.29μm, d9≈3.97μm, d10≈5.85μm, and the sum of γ5 and γ6 is greater than 180°.

[0050] Since the graph formed by the nodes is a diamond, in order to ensure the area at the node, it is only necessary to ensure that the length of the diagonal inside the node is 1μm≤a<3μm. If the diagonal a ≥ 3μm, under strong light, not only will black spots appear, but reflections will also occur, seriously affecting the visual effect; if the diagonal is less than 1μm, the line width at the connection between the first end and the second end and the intersection 130 is too small, and it is easy to break the line here. For example, the diagonal a can be 1μm, 1.5μm, 2μm and 2.5μm, and there is no specific limitation here.

[0051] Preferably, reference Figure 9 This design not only helps to reserve enough space for the etching solution to etch the metal, but also prevents wire breakage, thereby improving the reliability of the grid conductive structure.

[0052] To avoid the appearance of moiré patterns, the first metal wire and the second metal wire forming the node can be bent, reduced in width, or otherwise formed into a right angle, thereby improving visual clarity. Preferably, the surface structure is a square, which has a relatively small area, so the node is also relatively small.

[0053] The present disclosure also discloses a touch module including the above-mentioned grid conductive structure, thus having the advantages of the above-mentioned grid conductive structure.

[0054] The present disclosure also discloses a sensor comprising the above-mentioned grid conductive structure, thus having the advantages of the above-mentioned grid conductive structure.

[0055] In order to obtain the mesh conductive structure 100 having the above structure, a photomask with a pattern corresponding to the mesh conductive structure is required.

[0056] refer to Figure 3 、 Figure 5 、 Figure 6 、 Figure 8 and Figure 10 , respectively, are mask structures 70 corresponding to different grid conductive structures. The mask structure 70 includes a plurality of first strip structures 71 and a plurality of second strip structures 72. The first strip structures 71 and the second strip structures 72 are arranged in a staggered manner to form intersections 73. The first strip structures include a first end portion 74 near the intersection and a first main portion 75 away from the intersection. The line width d (e.g., 5 μm) is d.

[0057] refer to Figure 3 and Figure 4 , the diagonal line L2(a) of the node 73 may be 2 μm, and the width L1 of the line width variation may be 20 μm. Figure 6 , L6 can be 24μm, L8 can be 3μm, d can be 5μm, L81 can be 10-50μm, and L82 can be 0-20μm. Figure 8 , diagonal L11 = L9 = 2 μm, α = 90°, L10 can be 5.5 μm, and d can be 5 μm. Figure 10 The mask of L14=L15=1μm, L13=20μm, d=5μm. Figure 3 and Figure 5 , L1=20μm, d=5μm, L2=L3=2μm.

[0058] It should be noted that L5 can be 0-20 μm.

[0059] Of course, in addition to the first end portions of the plurality of first strip structures having a line width smaller than that of the first main portion, the second strip structure may also include a second end portion close to the intersection and a second main portion away from the intersection, wherein the line width of the second end portion is smaller than the line width of the second main portion, so that the sum of the two adjacent angles formed between the first metal wire and the second metal wire is greater than 180°.

[0060] The mask structure 10 also has a first curved portion and a second curved portion corresponding to the grid conductive structure. The length of the curved portion corresponds to the grid conductive structure, and the specific dimensions are not repeated here. Among them, the sum S1 of the first area formed by reducing the line width of the first end and / or the second area formed by reducing the line width of the second end, and the ratio S of the area when both the first end and the second end are not reduced meet the following relationship: 0.6≤S1 / S≤0.75. In other words, for the mask, the pattern area after reducing the line width must retain at least 60% of the original pattern area and at most 75% of the original pattern area. This is conducive to ensuring over-development during the etching process, thereby expanding the angle between the metal lines.

[0061] Preferably, the ratio S of the sum of the third area enclosed by the reduced line width at the first end and / or the fourth area enclosed by the reduced line width at the second end, to the area of ​​the first and second ends without reduction, satisfies the following relationship: 0.2 ≤ S3 / S ≤ 0.4. In other words, for the mask, the area removed should account for at least 20% and at most 40% of the original pattern area, thereby further ensuring that the node area is reduced.

[0062] In order to obtain the structure of the mask, it is necessary to prepare the mask according to the pattern of the mask. The following briefly lists the preparation process of the mask.

[0063] First, a suitable substrate is selected, which may be quartz glass, for example.

[0064] Second, apply a layer of photoresist, which can be positive or negative photoresist.

[0065] Third, place the photomask coated with photoresist in a photolithography machine for irradiation.

[0066] Fourth, the exposed photomask is treated in a developer to remove the uncrosslinked photoresist, thereby forming a pattern consistent with the grid conductive structure provided by the present disclosure.

[0067] Fifth, an etching process (such as dry etching or wet etching) is used to remove the portion of the mask substrate that is not protected by the photoresist to form a final mask pattern (a pattern having a grid conductive structure and a hollow portion).

[0068] Sixth, remove the residual photoresist.

[0069] It should be noted that when the mask is placed in the lithography machine for irradiation, the laser beam with a width of 250nm is used to irradiate the mask back and forth multiple times. This helps to solve the problem of line breakage.

[0070] According to the pattern of the mask, a mesh conductive structure having the above structure is obtained, and the preparation process is described by taking a mesh conductive structure with double sides as an example.

[0071] S10 , providing a conductive material on the substrate 10 .

[0072] Specifically, refer to Figure 12 and Figure 12 The double-sided metal plating 30 of the PET (polyethylene terephthalate) substrate can have a thickness of 200nm-1000nm. For example, copper plating can be performed on both sides using vacuum magnetron sputtering technology, with a thickness of 200nm, 400nm, 600nm, or 1000nm, without specific limitation. In addition to the metal 30, the conductive material can also include blackened layers 20 and 40 provided on both sides to protect the copper metal, which is beneficial to reduce reflection and increase light absorption, thereby providing better optical effects.

[0073] S20 , disposing a photoresist material 50 on the conductive material 30 .

[0074] Specifically, refer to Figure 12 and Figure 13 A photoresist material is placed on the copper metal. For example, it can be a positive photoresist or a negative photoresist. The positive photoresist becomes easily soluble after exposure, while the negative photoresist becomes the opposite.

[0075] S30 , placing a photomask on the photoresist material, and performing exposure and development processing on the photoresist material to form a patterned photoresist layer.

[0076] Specifically, refer to Figure 12 and Figure 14 , the light source is irradiated on the photoresist material from both sides, the pattern part on the mask is not irradiated, and the photoresist material in the hollow part is irradiated (reference Figure 12 ), and then put it into the developer for processing. If the photoresist material is positive, the pattern part is not easy to dissolve and is retained, and the hollow part is dissolved in the developer (refer to Figure 13 ), forming a patterned photoresist layer.

[0077] S40, etching the conductive material to form a grid conductive structure.

[0078] Specifically, refer to Figure 11 and Figure 15 The part exposed to the etching solution (including the black glue 20 and 40 and the metal copper) is etched away, and the pattern part covered by the photoresist material is not etched, forming a patterned grid conductive structure. Figure 14 .

[0079] S50 , removing the patterned photoresist layer 50 .

[0080] Specifically, refer to Figure 12 、 Figure 16 and Figure 17 The unetched photoresist layer is removed to expose the conductive material, forming a double-sided mesh conductive structure. The mesh conductive structure on each side has the above-mentioned mesh conductive structure, which will not be described in detail.

[0081] The ratio S of the sum S3 of the first area enclosed by the reduced line width of the first end and / or the second area enclosed by the reduced line width of the second end to the area when both the first end and the second end are not reduced meets the following relationship: 0.2≤S3 / S≤0.4.

[0082] It should be noted that the reference Figure 1 and Figure 5 (The pattern enclosed by the outermost and innermost dotted lines is the original mask pattern) The original mask design area is 217μm 2 , the intersection area is 26.3362μm 2 .contrast Figure 3 and Figure 5 (The pattern enclosed by the solid line is the newly designed mask pattern) The new mask design area is 149μm 2 , the intersection area is 2.6475μm 2 Under the microscope, according to Figure 5 The actual intersection area of ​​the photomask designed by Zhongyuan is 132.932μm 2 ;according to Figure 5 The actual intersection area of ​​the photomask designed by Zhongxin is 40.9μm 2 Compared with the original mask design, the actual intersection area is reduced by 70%.

[0083] It should be understood that although the terms "first" or "second" etc. may be used in the present disclosure to describe various elements (such as a first end and a second end), these elements are not defined by these terms, and these terms are only used to distinguish one element from another.

[0084] The basic principles of the present disclosure have been described above in conjunction with specific embodiments. However, it should be noted that the advantages, strengths, and effects mentioned in this disclosure are merely illustrative and not restrictive, and should not be construed as necessarily possessed by each embodiment of the present disclosure. Furthermore, the specific details disclosed above are provided for illustrative purposes and to facilitate understanding, rather than as limitations. These details do not limit the present disclosure to necessarily being implemented using these specific details.

[0085] The above description has been provided for the purpose of illustration and description. In addition, this description is not intended to limit the embodiments of the present disclosure to the forms disclosed herein. Although a number of example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

[0086] The components and devices involved in this disclosure are only illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the drawings. As will be appreciated by those skilled in the art, these components and devices may be connected, arranged, or configured in any manner.

[0087] The above are only specific embodiments of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this disclosure should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A touch screen grid conductive structure, characterized in that: include: a first metal line and a second metal line provided in the same layer and connected to each other, The first metal wires and the second metal wires are arranged in a staggered manner to form intersections, The first metal wire includes a first main body portion away from the intersection, and the first metal wire further includes at least one of a first end portion close to the intersection or a first bent portion located between the first end portion and the first main body portion, wherein the line width of the first end portion is smaller than that of the first main body portion, and the first bent portion is bent. The second metal line includes a second main portion away from the intersection, so that the sum of two adjacent angles formed between the first metal line and the second metal line is greater than 180°.

2. The touch screen grid conductive structure according to claim 1, wherein: A length d1 of the orthographic projection of the first end portion satisfies: 5 μm≤d1≤20 μm.

3. The touch screen grid conductive structure according to claim 1 or 2, characterized in that: The length of the orthographic projection of the first bent portion is 0 μm≤L2≤20 μm, the first metal wire and the second metal wire form two intersections, and the distance between the two intersections is not less than 10 μm and not more than 50 μm.

4. The touch screen grid conductive structure according to claim 1, wherein: The second metal line further includes a second end portion close to the intersection, the line width of the second end portion is smaller than the line width of the second main portion, and the length d1' of the orthographic projection of the first end portion and the second end portion satisfies: 11 μm≤d1'≤17 μm.

5. The touch screen grid conductive structure according to claim 1, wherein: The second metal wire further includes a second end portion close to the intersection and a second bent portion located between the second end portion and the second main body portion, wherein the second bent portion is bent. The length d1' of the orthographic projection of the first end portion and the second end portion satisfies: 11 μm ≤ d1' ≤ 17 μm, The lengths L2' of the orthographic projections of the first curved portion and the second curved portion satisfy the following: 0 μm ≤ L2' ≤ 20 μm.

6. The touch screen grid conductive structure according to claim 1, wherein: The area S of the intersection satisfies: 30 μm 2 ≤S≤100μm 2 .

7. The touch screen grid conductive structure according to claim 1, wherein: The length of the diagonal line inside the intersection is 1 μm≤a≤10 μm.

8. A touch module, characterized in that: The touch module includes the touch screen grid conductive structure according to any one of claims 1 to 7.

9. A sensor, characterized in that: The sensor comprises the touch screen grid conductive structure according to any one of claims 1 to 7.

10. A photomask, characterized in that: The mask has a grid pattern, and the grid pattern has the pattern of the touch screen grid conductive structure according to any one of claims 1 to 7, wherein a ratio S1 of a first area enclosed by the first end after reducing the line width and / or a second area enclosed by the second end after reducing the line width, to an area when both the first end and the second end are not reduced, meets the following relationship: 0.6≤S1 / S≤0.75.

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