Diamond wire bus and diamond wire

Abstract

The utility model provides a diamond wire bus and a diamond wire. The diamond wire bus comprises a base body and a coating layer covering at least part of the surface of the base body. Wherein in the radial direction of the generatrix of the diamond wire, the matrix has the maximum size D [mu] m, the coating layer has the first size L1 [mu] m, and D = a.L1; wherein a is a first thickness coefficient, and a is larger than or equal to 30 and smaller than or equal to 105. In the diamond wire bus provided by the invention, the substrate is coated with the coating layer, so that the diamond wire bus has good ductility in the subsequent diamond wire preparation process, and also has good cutting force after the final diamond wire is formed; besides, by limiting the size proportion of the coating layer and the base body, it can be ensured that the diamond wire bus has the ideal strength, and meanwhile the diamond wire bus has good diameter consistency after being subjected to the subsequent electroplating process and the cold drawing process.

Description

Technical Field

[0001] The present application belongs to the field of diamond wire technology, and specifically relates to a diamond wire busbar and diamond wire. Background Art

[0002] Diamond wire cutting technology, with its advantages of high wafer yield, high cutting efficiency, low material loss, and minimal environmental pollution, is gradually replacing traditional internal circular saws and mortar cutting techniques for cutting hard and brittle materials such as semiconductor silicon wafers and sapphire, becoming the mainstream cutting process. Compared to diamond wire with a high-carbon steel core, diamond wire with a tungsten core, due to its extremely high melting point, can avoid problems such as wire breakage caused by excessive temperatures during cutting, while also significantly improving strength.

[0003] However, since the surface of diamond wire and diamond wire busbar with tungsten wire as the core wire is usually coated, the poor bonding strength between the coatings leads to a high wire breakage rate during the wire drawing and cutting process.

[0004] How to design a diamond wire busbar and diamond wire with tungsten wire as the core wire so that they can have a good yield in the cutting process is a technical problem that needs to be solved at present. Utility Model Content

[0005] The present application provides a diamond wire busbar and diamond wire, aiming to solve the problem of high wire breakage rate of existing tungsten wire diamond wire busbar during the cutting process.

[0006] A first embodiment of the present application provides a diamond wire busbar, comprising a base body and a coating layer covering at least a portion of a surface of the base body;

[0007] Wherein, along the radial direction of the diamond wire busbar, the base has a maximum size D μm, and the coating layer has a first size L1 μm, satisfying:

[0008] D = a·L1;

[0009] Wherein, a is the first thickness coefficient, satisfying 30≤a≤105.

[0010] In some embodiments, the coating comprises:

[0011] a first metal layer, the first metal layer covering at least a portion of the surface of the substrate;

[0012] a second metal layer, the second metal layer covering at least a portion of a surface of the first metal layer away from the substrate;

[0013] A third metal layer is disposed on at least a portion of a surface of the second metal layer away from the first metal layer.

[0014] In some embodiments, the diamond wire busbar has a radius of R μm. Along the radial direction of the diamond wire busbar, the first metal layer has a second size of L2 μm, the second metal layer has a third size of L3 μm, and the third metal layer has a fourth size of L4 μm, satisfying:

[0015] R=0.5D+L2+L3+L4.

[0016] In some embodiments, the first size L1 satisfies: 0.25≤L1≤1.2.

[0017] The maximum size D μm satisfies: 10≤D≤100.

[0018] In some embodiments, the second size L2 μm and the third size L3 μm satisfy:

[0019] L3 = b·L2;

[0020] Wherein, b is the second thickness coefficient, satisfying 5≤b≤15.

[0021] In some embodiments, the third dimension L3 μm and the fourth dimension L4 μm satisfy:

[0022] L3=c·L4;

[0023] Wherein, c is the third thickness coefficient, satisfying 2≤c≤8.

[0024] In some embodiments, the second size L2 μm satisfies: 0.01≤L2≤0.12.

[0025] In some embodiments, the third dimension L3 μm satisfies: 0.01≤L3≤2.

[0026] In some embodiments, the fourth dimension L4 μm satisfies: 0.01≤L4≤1.

[0027] In some embodiments, the maximum dimension D μm satisfies: 24≤D≤40.

[0028] In some embodiments, the second size L2 μm satisfies: 0.02≤L2≤0.08.

[0029] In some embodiments, the third dimension L3 μm satisfies: 0.2≤L3≤0.4.

[0030] In some embodiments, the fourth dimension L4 μm satisfies: 0.15≤L4≤0.3.

[0031] The second embodiment of the present application provides a diamond wire, comprising the diamond wire busbar, a grinding layer and first particles in any of the above embodiments, wherein the grinding layer covers at least a portion of the surface of the diamond wire busbar, the first particles are dispersed in the grinding layer, and at least a portion of the first particles protrude from the grinding layer.

[0032] In some embodiments, second particles are dispersed in the grinding layer; the second particles are arranged between the adjacent first particles.

[0033] In some embodiments, the grinding layer has a thickness of 0.1 μm to 100 μm.

[0034] In some embodiments, the average particle size of the first particles is 10 μm to 100 μm.

[0035] In some embodiments, the average particle size of the second particles is 2 μm to 10 μm.

[0036] In some embodiments, a fourth metal layer is provided between the diamond wire busbar and the grinding layer; the fourth metal layer is a metal nickel layer.

[0037] The present application provides a diamond wire busbar, comprising a base and a coating layer covering at least a portion of the base; wherein, along the radial direction of the diamond wire busbar, the base has a maximum dimension Dμm, and the coating layer has a first dimension L1μm, satisfying: D = a·L1; wherein a is a first thickness coefficient, satisfying 30≤a≤105. In the diamond wire busbar provided by the present application, the base is coated with the coating layer, which can ensure that the diamond wire busbar has good ductility in the subsequent diamond wire preparation process and also has good cutting force after the final diamond wire is formed; in addition, by limiting the size ratio of the coating layer to the base, it can ensure that the diamond wire busbar has ideal strength while ensuring good diameter consistency after subsequent electroplating and cold drawing processes. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] The following detailed description of the specific embodiments of the present application in conjunction with the accompanying drawings will make the technical solutions and other beneficial effects of the present application apparent.

[0039] Figure 1 A schematic diagram of the main cross-sectional structure of a diamond wire busbar provided in an embodiment of the present application;

[0040] Figure 2 for Figure 1 Schematic diagram of the side cross-sectional structure of the middle diamond wire busbar;

[0041] Figure 3 A schematic diagram of the main cross-sectional structure of a diamond wire provided in an embodiment of the present application;

[0042] Figure 4 for Figure 3 Schematic diagram of the side cross-sectional structure of the diamond wire;

[0043] Reference numerals:

[0044] 100 - substrate, 200 - coating layer, 201 - first metal layer, 202 - second metal layer, 203 - third metal layer, 300 - grinding layer, 301 - first particles, 302 - second particles, 400 - fourth metal layer. DETAILED DESCRIPTION

[0045] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative efforts are within the scope of protection of this application.

[0046] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be directly connected, or indirectly connected through an intermediate medium, or indirectly connected through a pipe or pipeline, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances. In the description of this application, the meaning of "multiple" is two or more, unless otherwise clearly specified and specifically limited. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features.

[0047] See also Figure 1 and Figure 2 The first embodiment of the present application provides a diamond wire busbar, comprising a substrate 100 and a coating layer 200 covering at least a portion of the surface of the substrate 100;

[0048] In the radial direction of the diamond wire busbar (ie, the first direction X), the base 100 has a maximum size D μm, and the coating layer 200 has a first size L1 μm, satisfying:

[0049] D = a·L1;

[0050] Wherein, a is the first thickness coefficient, satisfying 30≤a≤105.

[0051] It is understood that the value of the first thickness coefficient a can be any value among 30, 40, 50, 60, 70, 80, 90, 100, and 105, or a range between any two values. The coating layer 200 coating the substrate 100 can ensure that the diamond wire busbar has good ductility in the subsequent diamond wire manufacturing process, while also having good cutting force after the final diamond wire is formed. In addition, by limiting the size ratio of the coating layer 200 to the substrate 100, the diamond wire busbar can be ensured to have ideal strength while maintaining good diameter consistency after subsequent electroplating and cold drawing processes.

[0052] In some embodiments, the cladding layer 200 includes:

[0053] A first metal layer 201 , the first metal layer 201 covers at least a portion of the surface of the substrate 100 ;

[0054] A second metal layer 202 , the second metal layer 202 covers at least a portion of the surface of the first metal layer 201 away from the substrate 100 ;

[0055] The third metal layer 203 covers at least a portion of the surface of the second metal layer 202 away from the first metal layer 201 .

[0056] See also Figures 1 and 2 The first metal layer 201 is in contact with the tungsten wire serving as the substrate 100, thereby improving the bonding strength between the second metal layer 202 and the substrate 100. The third metal layer 203 is located on the outermost side of the coating layer 200 and has a high surface hardness. While providing lubrication, it can maintain sufficient strength to prevent it from falling off, allowing the drawing and cutting of the diamond wire or the diamond wire busbar to proceed continuously. The second metal layer 202 is located between the first metal layer 201 and the third metal layer 203 and can serve as a buffer and coordination layer, playing a role in lubricating and coordinating the deformation of the substrate during the cold drawing deformation process and cutting process of the diamond wire busbar. The coating layer 200 formed by the combination of the three metal layers can reduce the wire breakage rate of the diamond wire busbar during the cold drawing process and obtain a more consistent finished product diameter, effectively increasing the finished diamond wire ring diameter. The stable ring diameter can reduce the stress concentration on the diamond wire during the cutting process, thereby reducing the wire breakage rate and improving the silicon wafer yield.

[0057] In some embodiments, the second metal layer 202 is a copper layer. The copper layer has good ductility and can play a role in lubricating and coordinating the deformation of the substrate in the subsequent cold drawing process.

[0058] In some embodiments, the third metal layer 203 is any one of a copper-zinc alloy layer, a copper-tin alloy layer, a copper-zinc-tin alloy layer, and a copper-zinc-nickel alloy layer. Any of the above alloy layers has good hardness and can provide good protection for the substrate 100 and the first and second metal layers 201 and 202.

[0059] In some embodiments, the substrate 100 is a tungsten wire or a tungsten alloy wire.

[0060] In some embodiments, the diamond wire busbar has a radius of R μm. Along the radial direction of the diamond wire busbar, the first metal layer 201 has a second size of L2 μm, the second metal layer 202 has a third size of L3 μm, and the third metal layer 203 has a fourth size of L4 μm, satisfying:

[0061] R=0.5D+L2+L3+L4.

[0062] Based on the above embodiment, D=a·(L2+L3+L4), 30≤a≤105.

[0063] Since the strength of the tungsten wire forming the substrate 100 is much higher than the strength of the coating 200, under the premise of ensuring that the cutting effect is met, the smaller the thickness of the coating 200, the more beneficial it is to the strength improvement of the diamond wire busbar, and ultimately the cutting force of the diamond wire can be improved; but if the thickness of the coating 200 is too small, it will be not conducive to the cold deformation of the substrate 100. This is because when preparing the substrate 100, a thicker tungsten wire will be used for hot drawing under the traditional process, so the consistency of the diameter of the formed substrate 100 is not ideal. At the same time, due to the high strength of the tungsten wire, the diameter difference at different positions along the axial direction of the substrate 100 will directly lead to the difference in deformation resistance during the subsequent cold drawing process, which is very unfavorable for the mold to impose uniform deformation of the diamond wire busbar. Therefore, a coating 200 of a certain thickness, especially the second metal layer 202, can coordinate the deformation of the substrate 100 during the cold drawing process, making it more uniform, and finally obtaining a diamond wire busbar with better consistency. When the first thickness coefficient a, that is, the ratio of the substrate 100 to the coating layer 200 satisfies the above value range, it can ensure that the diamond wire busbar has ideal strength while having good diameter consistency after the cold drawing process.

[0064] Based on the above embodiment, the first thickness coefficient a is further preferably 40 ≤ a ≤ 90. It is understood that the value of the first thickness coefficient a can be any value among 40, 50, 60, 70, 80, and 90, or a range between any two values. When the value of the first thickness coefficient a satisfies the above range, the overall strength and cold-drawing consistency of the diamond wire busbar can be further improved.

[0065] In some embodiments, the first dimension L1 satisfies: 0.25≤L1≤1.2.

[0066] It is understood that the value of the first dimension L1 (unit: μm) can be any value among 0.25, 0.5, 0.75, 1.0, 1.2, or a range between any two values. When the first dimension L1 meets the above value range, it can further ensure that the diamond wire busbar has good ductility and has relatively ideal strength as a whole.

[0067] In some embodiments, the maximum dimension D μm satisfies: 10≤D≤100, more preferably 24≤D≤40.

[0068] Generally, the radial section of the diamond wire busbar and the diamond wire can be circular or elliptical, preferably circular. Figure 1 When the radial section of the substrate 100 is circular, the maximum dimension D is the diameter of the radial section of the substrate 100. It is understood that the value (unit: μm) of the maximum dimension D can be any value among 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, or a range between any two values; further, the value (unit: μm) of the maximum dimension D can be any value among 24, 28, 32, 36, 40, or a range between any two values.

[0069] In some embodiments, the second dimension L2 μm and the third dimension L3 μm satisfy:

[0070] L3 = b·L2;

[0071] Wherein, b is the second thickness coefficient, satisfying 5≤b≤15.

[0072] It is understood that the value of the second thickness coefficient b can be any value among 5, 7, 9, 11, 13, and 15, or a range between any two values. When the second thickness coefficient b, that is, the ratio of the third dimension L3 to the second dimension L2, satisfies the above value range, the diamond wire busbar can have good ductility and relatively ideal overall strength.

[0073] In some embodiments, the third dimension L3 μm and the fourth dimension L4 μm satisfy:

[0074] L3=c·L4;

[0075] Wherein, c is the third thickness coefficient, satisfying 2≤c≤8.

[0076] It is understood that the value of the third thickness coefficient c can be any value among 2, 3, 4, 5, 6, 7, and 8, or a range between any two values. When the third thickness coefficient c, that is, the ratio of the third dimension L3 to the fourth dimension L4, satisfies the above value range, it can ensure that the outer surface of the diamond wire busbar has an ideal hardness and the overall strength is relatively ideal.

[0077] In some embodiments, the second dimension L2 μm satisfies: 0.01≤L2≤0.12, and more preferably 0.02≤L1≤0.08.

[0078] It can be understood that the value of the second dimension L2 (unit: μm) can be any value among 0.01, 0.03, 0.05, 0.07, 0.09, 0.11, 0.12 or a range between any two values; further, the value of the second dimension L2 (unit: μm) can be any value among 0.02, 0.04, 0.06, 0.08 or a range between any two values.

[0079] In some embodiments, the third dimension L3 μm satisfies: 0.01≤L3≤2, and more preferably 0.2≤L2≤0.4.

[0080] It can be understood that the value of the third dimension L3 (unit: μm) can be any value among 0.01, 0.05, 0.1, 0.5, 0.7, 0.9, 1.1, 1.3, 1.5, 1.7, 2, or a range between any two values; further, the value of the third dimension L3 (unit: μm) can be any value among 0.2, 0.25, 0.3, 0.35, 0.4, or a range between any two values.

[0081] In some embodiments, the fourth dimension L4 μm satisfies: 0.01≤L4≤1, and more preferably 0.15≤L3≤0.3.

[0082] It can be understood that the value of the fourth dimension L4 (unit: μm) can be any value among 0.01, 0.05, 0.1, 0.5, 0.7, 0.9, 1, or a range between any two values; further, the value of the fourth dimension L4 (unit: μm) can be any value among 0.15, 0.18, 0.21, 0.24, 0.27, 0.3, or a range between any two values.

[0083] When the maximum dimension D, the second dimension L2, the third dimension L3, and the fourth dimension L4 of the base 100 meet the above value ranges, it can ensure that the diamond wire busbar achieves a balance in terms of overall strength and cold-drawing coordination.

[0084] The second embodiment of the present application provides a diamond wire, see Figure 3 and Figure 4 , including the diamond wire busbar and grinding layer 300 and first particles 301 in any of the above embodiments, the grinding layer 300 is coated on at least part of the surface of the diamond wire busbar, the first particles 301 are dispersed in the grinding layer 300, and at least part of the first particles 301 protrudes from the grinding layer 300, which is used to assist the grinding layer 300 in cutting silicon wafers, etc. in the subsequent cutting process.

[0085] In some embodiments, second particles 302 are dispersed in the grinding layer 300 ; the second particles 302 are disposed between adjacent first particles 301 .

[0086] In some embodiments, second particles 302 are dispersed in the grinding layer 300 ; the average particle size of the second particles 302 is 2 μm to 10 μm.

[0087] It is understood that the average particle size of the second particles 302 (unit: μm) can be any value among 2, 3, 4, 5, 6, 7, 8, 9, 10, or a range between any two values. When the average particle size of the second particles 302 meets the above value range, the second particles can be evenly dispersed in the grinding layer 300, thereby increasing the hardness of the grinding layer 300 and the bonding ability between the grinding layer 300 and the diamond wire busbar or the fourth metal layer 400, thereby increasing the service life and cutting efficiency of the diamond wire.

[0088] In some embodiments, the thickness of the grinding layer 300 is 0.1 μm to 100 μm.

[0089] It is understood that the thickness of the grinding layer 300 (unit: μm) can be any value among 0.1, 1, 5, 10, 20, 50, 80, 100, or a range between any two values. When the thickness of the grinding layer 300 falls within the above range, it can avoid the problem that the grinding layer 300 is too thin, which weakens its consolidation effect on the first particles 301, resulting in a high shedding rate of the first particles 301 during the cutting process of the diamond wire and a reduction in cutting ability. At the same time, an excessively thick grinding layer 300 can result in a low grinding rate of the first particles 301, reducing the cutting ability of the diamond wire.

[0090] In some embodiments, the average particle size of the first particles 301 is 10 μm to 100 μm.

[0091] The first particles 301 are irregular in shape. It can be understood that the average particle size of the first particles 301 (unit: μm) can be any value among 10, 20, 30, 40, 50, 60, 70, 80, 90, 100 or a range between any two values.

[0092] See also Figure 3 and Figure 4 In some embodiments, a fourth metal layer 400 is provided between the diamond wire busbar and the grinding layer 300 to further enhance the bonding force between the diamond wire busbar and the grinding layer 300; the fourth metal layer 400 is a metal nickel layer. It can be understood that the metal nickel layer also includes pure metal nickel, and also includes a nickel alloy containing a small amount of cobalt or iron.

[0093] It is understood that the tungsten wire mentioned in the present application is a metal wire with a tungsten mass content greater than or equal to 95%, the metal copper layer is a metal wire with a copper mass content greater than or equal to 95%, and the metal nickel layer is a metal wire with a nickel mass content greater than or equal to 95%; the raw materials for the alloy layers such as the copper-zinc alloy layer, copper-tin alloy layer, copper-zinc-tin alloy layer, copper-zinc-nickel alloy layer, nickel-cobalt alloy layer and nickel-iron alloy layer mentioned in the present application can be obtained commercially or prepared by thermal diffusion. Taking the copper-zinc alloy layer as an example, preparing the copper-zinc alloy layer by thermal diffusion may include the following steps:

[0094] S1. electroplating a metal zinc layer on the surface of the metal copper layer;

[0095] S2. Heating the composite metal layer to diffuse the metallic zinc into the metallic copper layer to obtain a copper-zinc alloy layer.

[0096] The following describes the diamond wire busbar and diamond wire provided in this application in conjunction with specific embodiments:

[0097] Example 1

[0098] This embodiment provides a diamond wire busbar, see Figure 1 and Figure 2 , including a substrate 100 and a coating layer 200 coated on the surface of the substrate 100. Along the direction away from the substrate 100, the coating layer 200 includes a first metal layer 201, a second metal layer 202 and a third metal layer 203 stacked in sequence.

[0099] The substrate 100 is made of pure tungsten wire with a diameter of 60 μm; the first metal layer 201 is made of nickel with a thickness of 0.05 μm; the second metal layer 202 is made of pure copper with a thickness of 0.45 μm; and the third metal layer 203 is made of copper-zinc alloy with a thickness of 0.4 μm.

[0100] The fourth metal layer 400 and the grinding layer 300 are electroplated on the basis of the above-mentioned diamond wire busbar to form a diamond wire. Figure 3 The fourth metal layer 400 covers the surface of the diamond wire busbar, the grinding layer 300 covers the surface of the fourth metal layer 400, the first particles 301 are distributed in the grinding layer 300, and the second particles are dispersed in the grinding layer 300.

[0101] Examples 2 to 18

[0102] The diamond wire busbars and diamond wire structures provided in Examples 2 to 18 are consistent with those in Example 1, with the only difference being that the size parameters of the substrate 100 and the coating layer 200 are adjusted.

[0103] Comparative Examples 1 to 9

[0104] The diamond wire busbars and diamond wire structures provided in Comparative Examples 1 to 9 are consistent with those in Example 1, with the only difference being that the size parameters of the substrate 100 and the coating layer 200 are adjusted.

[0105] The values ​​of the relevant parameters of the diamond wire busbars in Examples 1 to 18 and Comparative Examples 1 to 9 are shown in Table 1.

[0106] Table 1

[0107]

[0108]

[0109] The diamond wires in Examples 1 to 18 and Comparative Examples 1 to 9 were subjected to strength tests using the following method:

[0110] Wire breakage rate test: G12 size silicon wafers were cut with a cutting tension of 4.0N, a cutting time of 100min and 120min respectively, and 200 cuts per wafer. The wire breakage rates were compared.

[0111] Yield test: The appearance of the cut silicon wafers is used as the judging standard. When there is no abnormality in the appearance of the silicon wafers, they are considered qualified finished products.

[0112] The test results are shown in Table 2.

[0113] Table 2

[0114]

[0115]

[0116] According to Table 2, it can be seen that the diamond wire and diamond wire busbar obtained using the solution provided in this application have good strength performance. At the same time, in the process of cutting silicon wafers, due to the high uniformity of their diameters, the cut silicon wafers have a smooth appearance and the yield is significantly improved.

[0117] The above is a detailed introduction to the diamond wire busbar and diamond wire provided in the embodiments of the present application. Specific examples are used in this application to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application; ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A diamond wire busbar, characterized in that: It comprises a base (100) and a coating layer (200) covering at least a portion of the surface of the base (100); Wherein, along the radial direction of the diamond wire busbar, the base (100) has a maximum size D μm, and the coating layer (200) has a first size L1 μm, satisfying: D = a·L1; Wherein, a is the first thickness coefficient, satisfying 30≤a≤105.

2. The diamond wire busbar according to claim 1, characterized in that: The coating layer (200) comprises: a first metal layer (201), the first metal layer (201) being coated on at least a portion of the surface of the substrate (100); a second metal layer (202), the second metal layer (202) covering at least a portion of a surface of the first metal layer (201) away from the substrate (100); A third metal layer (203) is provided on at least a portion of a surface of the second metal layer (202) away from the first metal layer (201).

3. The diamond wire busbar according to claim 2, characterized in that: The diamond wire busbar has a radius of R μm. Along the radial direction of the diamond wire busbar, the first metal layer (201) has a second size of L2 μm, the second metal layer (202) has a third size of L3 μm, and the third metal layer (203) has a fourth size of L4 μm, satisfying: R=0.5D+L2+L3+L4.

4. The diamond wire busbar according to claim 1, characterized in that: The first size L1 satisfies: 0.25≤L1≤1.2; and / or, The maximum size D μm satisfies: 10≤D≤100.

5. The diamond wire busbar according to claim 3, characterized in that: The second size L2 μm and the third size L3 μm satisfy: L3 = b·L2; Wherein, b is the second thickness coefficient, satisfying 5≤b≤15.

6. The diamond wire busbar according to claim 3, characterized in that: The third dimension L3 μm and the fourth dimension L4 μm satisfy: L3=c·L4; Wherein, c is the third thickness coefficient, satisfying 2≤c≤8.

7. The diamond wire busbar according to claim 3, characterized in that: The second size L2 μm satisfies: 0.01≤L2≤0.12; and / or, The third dimension L3 μm satisfies: 0.01≤L3≤2; and / or, The fourth dimension L4 μm satisfies: 0.01≤L4≤1.

8. The diamond wire busbar according to claim 3, characterized in that: The maximum size D μm satisfies: 24≤D≤40; and / or, The second size L2 μm satisfies: 0.02≤L2≤0.08; and / or, The third dimension L3 μm satisfies: 0.2≤L3≤0.4; and / or, The fourth dimension L4 μm satisfies: 0.15≤L4≤0.

3.

9. A diamond wire, characterized in that: The present invention comprises a diamond wire busbar according to any one of claims 1 to 8, a grinding layer (300) and first particles (301), wherein the grinding layer (300) covers at least a portion of the surface of the diamond wire busbar (10), the first particles (301) are dispersed in the grinding layer (300), and at least a portion of the first particles (301) protrude from the grinding layer (300).

10. The diamond wire according to claim 9, characterized in that: Second particles (302) are dispersed in the grinding layer (300); the second particles (302) are arranged between adjacent first particles (301).

11. The diamond wire according to claim 10, characterized in that: The thickness of the grinding layer (300) is 0.1 μm to 100 μm; and / or, The average particle size of the first particles (301) is 10 μm to 100 μm; and / or, The average particle size of the second particles (302) is 2 μm to 10 μm.

12. The diamond wire according to claim 9, characterized in that: A fourth metal layer (400) is provided between the diamond wire busbar and the grinding layer (300); the fourth metal layer (400) is a metal nickel layer.

Images