Electronic component failure analysis system

Abstract

The utility model provides an electronic component failure analysis system, which comprises a positioning mark arranged on the surface of an electronic component; the X-ray analysis system is used for generating a first image by analyzing the electronic element, and the first image comprises a first mark formed by the positioning mark; the ion beam microscope analysis system is used for generating a second image by analyzing the electronic element, and the second image comprises a second mark formed by the positioning mark; and the positioning system is used for overlapping the first mark with the second mark. Accurate positioning of coordinates between the X-ray analysis system and the ion beam microscope analysis system can be realized, and the obtained technical effects are not limited to: (1) the positioning accuracy of failure analysis can be improved, and the error rate of analysis position is reduced; (2) the efficiency of failure analysis can be improved, and the preparatory work before FIB analysis is shortened;

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a system for analyzing failures of electronic components. Background Art

[0002] Failure analysis (FA) is used to investigate the causes of product problems. During the semiconductor packaging process, failure analysis is commonly performed on micro-bumps and C4 (Controlled Collapsed Chip Connection) flip-chip soldering. FA typically utilizes a focused ion beam (FIB) to perform horizontal (top-down / top-down) analysis, identifying structural features, such as micro-bumps, where problems may be occurring.

[0003] However, FIB is a destructive analysis that uses an ion beam to precisely cut and grind the product to obtain a cross-sectional image of the product. When using FIB for failure analysis (FA), it is difficult to confirm the specific location of the defect, so the preparation work before the analysis will take a long time, and there is a risk of cutting failure. Generally, it takes more than 120 minutes to use FIB to cut the product and thin it to expose the defect location. Moreover, during the FIB analysis process, product structures such as micro-bumps are often artificially damaged to produce artificial defects (artificial defects), which in turn lead to misjudgment. In addition, the cost of FIB is also very high, which may reach tens of thousands of RMB per piece. If the cutting fails, it will cause additional cost losses.

[0004] To this end, the industry uses X-ray technology to assist in identification. X-ray technology is a non-destructive vertical analysis technique that uses X-rays to vertically penetrate the product, providing non-destructive 3D imaging to detect internal defects. Therefore, X-ray technology can help locate defects without damaging the product.

[0005] One existing failure analysis process uses 3D X-ray technology to identify defects, followed by FIB analysis. The FIB analysis process involves thinning the product to expose characteristic features, such as microbumps, based on the defects found by 3D X-ray. The microbumps are then used as targets to infer the defect's location, and the product is then cut. However, FIB and X-ray technologies use different positioning systems, resulting in vastly different image captures, making direct location and analysis impossible.

[0006] Since X-ray and FIB cannot achieve the same positioning, although defects can be found through X-ray analysis, it is still difficult to accurately locate the location of defects during FIB analysis. The thinning / cutting process is still prone to grinding damage and damage to the product structure, resulting in artificial defects and thus human misjudgment. Figure 1 , Figure 1 (a) shows a 3D X-ray layer view of the original product, where the circles are the defects found; Figure 1 (b) and (c) show two 3D X-ray cross-sectional images of the product after FIB thinning, respectively. The rectangular boxes in the figures are artificial defects caused by grinding damage.

[0007] In addition, in the failure analysis of microbumps, due to their high reproducibility, they are difficult to distinguish under a microscope due to their similar appearance. When the positioning system is different, the microbumps are easily confused, making it difficult to determine the microbump that is the target object. As a result, the FIB cutting position may be incorrect. Figure 2 , Figure 2 The solid circle is the correct cutting position, and the dotted circle is the incorrect cutting position. Utility Model Content

[0008] The present application provides a system for electronic component failure analysis.

[0009] The electronic component failure analysis system proposed in this application is suitable for analyzing the causes of electrical failure of electronic components, including:

[0010] a positioning mark, disposed on the surface of the electronic component;

[0011] An X-ray analysis system for generating a first image by analyzing the electronic component, wherein the first image includes a first mark formed by the positioning mark;

[0012] an ion beam microscope analysis system for generating a second image by analyzing the electronic component, wherein the second image includes a second mark formed by the positioning mark; and

[0013] A positioning system is used to coincide the first mark with the second mark.

[0014] In some optional embodiments, the X-ray analysis system is further configured to determine an electrical failure point by analyzing the electronic component.

[0015] In some optional embodiments, the ion beam microscope analysis system is further used to perform analysis based on the electrical failure points.

[0016] In some optional embodiments, the positioning system is further used to synchronize the coordinate axes of the X-ray analysis system and the ion beam microscope analysis system.

[0017] In some optional embodiments, the first mark and the second mark are identical in graphic form.

[0018] In some optional embodiments, the positioning mark is an asymmetric pattern in at least one direction.

[0019] In some optional embodiments, the positioning mark includes a first part and a second part, and the first part and the second part are different in shape from each other.

[0020] In some optional embodiments, the positioning mark is a recessed pattern formed on the surface of the electronic component.

[0021] In some optional embodiments, the ion beam microscope analysis system is further used to form the positioning mark on the surface of the electronic component by cutting the electronic component.

[0022] In some optional embodiments, the ion beam microscope analysis system is further used to determine a target object on the electronic component based on the electrical failure point, and analyze the electronic component based on the target object, where the target object is a micro-bump in the electronic component or a metal marking block additionally formed on the electronic component.

[0023] In order to solve the technical problem that the positioning systems of FIB and X-Ray technologies are different, the acquired image pictures are also completely different, and the images of the two cannot be directly positioned and analyzed, the present application proposes a system for electronic component failure analysis that can be applied to positioning between FIB and X-Ray. A positioning mark is made on the surface of the electronic component. Next, the X-ray analysis system generates a first image of a first mark formed by the positioning mark, and the ion beam microscope analysis system generates a second image of a second mark formed by the positioning mark. The positioning system is used to overlap the first mark with the second mark, so as to achieve accurate positioning of the coordinates between the X-ray analysis system and the ion beam microscope analysis system. Therefore, the ion beam microscope analysis system can complete destructive analysis of the product more accurately and efficiently according to the electrical failure point (or defect position) analyzed by the X-ray analysis system.

[0024] The technical effects achieved by the present application are not limited to: 1. It can improve the positioning accuracy of failure analysis and reduce the error rate of analysis position, thereby avoiding human misjudgment caused by human damage caused by human destruction, and avoiding FIB cutting position errors caused by the inability to identify the micro-bumps as the target due to the similar appearance of the micro-bumps, thereby reducing the cost losses caused by cutting failures; 2. It can improve the efficiency of failure analysis and shorten the preparation work before FIB analysis. Practice has verified that the present application can shorten the pre-operation preparation time before FIB analysis from the current more than 120 minutes to less than 30 minutes. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Other features, objects and advantages of the present application will become more apparent upon reading the detailed description of non-limiting embodiments made with reference to the following drawings:

[0026] Figure 1 It is a schematic diagram of a product structure during the failure analysis process according to the existing technology;

[0027] Figure 2 It is another schematic diagram of the product structure during the failure analysis process according to the prior art;

[0028] Figure 3 is a schematic structural diagram of an embodiment of a system for electronic component failure analysis according to the present application;

[0029] Figure 4 is an operational flow chart of an embodiment of a system for electronic component failure analysis according to the present application;

[0030] Figure 5 is a schematic diagram of a graphical structure of a positioning mark according to an embodiment of the present application;

[0031] Figure 6 is a schematic diagram of a graphical structure of a positioning mark according to another embodiment of the present application;

[0032] Figure 7 is an operational flow chart of an embodiment of the electronic component failure analysis system according to the present application applied to a fan-out structure;

[0033] Figure 8 The figure is an operational flow chart of an embodiment of applying the electronic component failure analysis system according to the present application to a hybrid bonding structure.

[0034] Description of reference numerals / symbols:

[0035] 10-Electronic components; 11-Positioning marks; 20-X-ray analysis system; 30-Ion beam microscope analysis system; 40-Positioning system. DETAILED DESCRIPTION

[0036] The following describes the specific embodiments of the present application in conjunction with the accompanying drawings and examples. Those skilled in the art will readily understand the technical problems solved by the present application and the technical effects produced by the present application through the contents of this specification. It should be understood that the specific embodiments described herein are merely intended to explain the relevant inventions and creations, and are not intended to limit the inventions and creations. Furthermore, for ease of description, only the portions relevant to the relevant inventions and creations are shown in the accompanying drawings.

[0037] It should be readily understood that the meanings of “on,” “over,” and “over…” in this application should be interpreted in the broadest sense, such that “on” not only means “directly on something,” but also means “on something” including intermediate components or layers therebetween.

[0038] Furthermore, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," and "upper" may be used herein to describe the relationship of one element or component to another element or component illustrated in the drawings. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90° or at other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0039] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of the specification are only used to match the contents recorded in the specification for the understanding and reading of those skilled in the art, and are not used to limit the limiting conditions for the implementation of this application. Therefore, they have no substantial technical significance. Any modification of the structure, change in the proportional relationship, or adjustment of the size should still fall within the scope of the technical content disclosed in this application without affecting the efficacy and purpose that can be achieved by this application. At the same time, terms such as "on", "first", "second" and "one" quoted in this specification are only for the convenience of description and are not used to limit the scope of the implementation of this application. Changes or adjustments in their relative relationships should also be regarded as the scope of the implementation of this application without substantially changing the technical content.

[0040] It should also be noted that the longitudinal section corresponding to the embodiment of the present application may be a section corresponding to the front view direction, the transverse section may be a section corresponding to the right view direction, and the horizontal section may be a section corresponding to the top view direction.

[0041] In addition, the embodiments and features of the embodiments of the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0042] refer to Figure 3 , Figure 3 This is a schematic diagram of the structure of an embodiment of the electronic component failure analysis system according to the present application. The electronic component failure analysis system of the present application is suitable for analyzing the cause of the electrical failure of the electronic component and determining the electrical failure point.

[0043] like Figure 3 As shown, the electronic component failure analysis system of the present application includes:

[0044] A positioning mark 11 is provided on the surface of the electronic component 10;

[0045] An X-ray analysis system 20 is used to analyze the electronic component 10 and generate a first image by analyzing the electronic component 10. The first image includes a first mark formed by the positioning mark 11.

[0046] an ion beam microscope analysis system 30 for analyzing the electronic component 10 to generate a second image by analyzing the electronic component 10 , wherein the second image includes a second mark formed by the positioning mark 11 ; and

[0047] The positioning system 40 is used to coincide the first mark with the second mark.

[0048] Here, the electronic component 10 includes but is not limited to various types of semiconductor packaging structures. For example, the electronic component 10 can be a fan-out (FO) structure, a hybrid bond (Hybridbond) structure, etc.

[0049] Here, the positioning mark 11 can be a pattern with height differences, for example, it can be a concave pattern formed on the surface of the electronic component 10, or it can be a convex pattern formed on the surface of the electronic component 10, or it can be other types of patterns such as a composite structure of concave and convex structures.

[0050] Here, the X-ray analysis system 20 is an analysis system that can use X-rays to vertically penetrate the product and provide non-destructive 3D imaging. The X-ray analysis system 20 can be a 3D X-ray analysis system. Exemplarily, the X-ray analysis system 20 includes, but is not limited to, a three-dimensional X-ray microscope (XRM). The X-ray analysis system 20 can be used to inspect the electronic component 10 and determine an electrical failure point by analyzing the electronic component 10. The electrical failure point includes, but is not limited to, a failed micro-bump (or μbump) or a failed copper pillar (pillar) within the electronic component 10.

[0051] Here, the ion beam microscope analysis system 30, i.e., a FIB (focused ion beam) microscope analysis system, can use a focused ion beam to accurately cut and grind the electronic component 10 to obtain a cross-sectional image of the electronic component, thereby performing destructive analysis of the electronic component 10. In the embodiment of the present application, the ion beam microscope analysis system 30 can be used to analyze the electronic component 10 based on the electrical failure points determined by the X-ray analysis system 20. In the embodiment of the present application, the ion beam microscope analysis system 30 can be, for example, a focused ion beam scanning electron microscope (FIB-SEM).

[0052] Here, the positioning system 40 can be, for example, a computer system or processing module including a processor or microprocessor. It can align the first mark with the second mark to complete image alignment of the first image and the second image, thereby achieving accurate coordinate positioning between the X-ray analysis system 20 and the ion beam microscope analysis system 30. Optionally, the positioning system 40 and the ion beam microscope analysis system 30 can be an integrated system, or the positioning system 40 can be a subsystem of the ion beam microscope analysis system 30.

[0053] In some optional embodiments, the X-ray analysis system 20 and the ion beam microscopy analysis system 30 each have their own coordinate systems and utilize their own coordinate axes during analysis. Here, positioning system 40, in conjunction with positioning markers 11, can synchronize the coordinate axes of the X-ray analysis system 20 and the ion beam microscopy analysis system 30, completing the connection between the coordinates of the two systems and achieving coordinate positioning between the X-ray analysis system 20 and the ion beam microscopy analysis system 30. This allows for more accurate and efficient destructive analysis by the ion beam microscopy analysis system 30.

[0054] In some optional embodiments, the ion beam microscope analysis system 30 can be further used to form a recessed patterned positioning mark 11 on the surface of the electronic component 10 by cutting the electronic component 10. That is, in practical applications, the positioning mark 11 can be formed by processing the surface of the electronic component 10 using the ion beam microscope analysis system 30. Of course, in other optional embodiments, other devices, such as laser devices, can also be used to form the positioning mark 11 on the surface of the electronic component 10 through laser cutting / ablation, etc. This document does not limit the use of any device or the method of forming the positioning mark 11.

[0055] In some optional embodiments, the ion beam microscope analysis system 30 is further used to determine a target object on the electronic component 10 based on the electrical failure point, and analyze the electronic component 10 based on the target object, wherein the target object is a micro-bump in the electronic component 10 or a metal marker block additionally formed on the electronic component 10. Here, during the destructive analysis process, the ion beam microscope analysis system 30 may remove the positioning mark 11 during the thinning process of the electronic component 10, or may tilt / flip the electronic component 10, resulting in the positioning mark 11 no longer being able to be used as a basis for positioning in certain processes. To this end, the ion beam microscope analysis system 30 can determine a micro-bump or metal marker block as the target object, and establish a positional association relationship between a second mark formed by the positioning mark 11 and a third mark formed by the target object, as well as a positional association relationship between the third mark and the electrical failure point, so that the electronic component 10 can be subsequently analyzed based on the third mark formed by the target object, thereby ensuring the accuracy of the entire destructive analysis process.

[0056] In some optional embodiments, the material of the metal marker block may be platinum (Pt) or other metals; the shape of the metal marker block includes but is not limited to a square.

[0057] In some optional embodiments, the electronic component failure analysis system of the present application further includes a metal deposition system for depositing metal on the surface of the electronic component to form a metal marker. For example, because the ion beam microscope analysis system 30 is capable of material evaporation, it can be used as a metal deposition system. That is, the ion beam microscope analysis system 30 can be further used to deposit metal on the surface of the electronic component 10 to form a metal marker.

[0058] In some optional embodiments, the first mark and the second mark are identical in pattern, and both are formed by scanning the positioning mark 11 .

[0059] In some optional embodiments, the positioning mark 11 is an asymmetrical figure in at least one direction so as to indicate the direction. If a figure is symmetrical in only one direction, such as an arrow or an isosceles trapezoid or other bilaterally symmetrical figure, it can be used as the positioning mark 11.

[0060] In some optional embodiments, the positioning mark 11 includes a first part and a second part, the first part and the second part have different graphics from each other, and the first part and the second part may be connected or not. In this way, positioning can be achieved more accurately and direction can be indicated. For example, the first part and the second part of the positioning mark 11 can both be trapezoidal, the sizes of the two trapezoids can be the same or different, and the directions of the two trapezoids can be consistent or opposite. For another example, the positioning mark 11 can include two circles of different sizes, and the two circles serve as the first part and the second part respectively. For another example, the positioning mark 11 can include an arrow shape, and the head and the shaft of the arrow serve as the first part and the second part respectively.

[0061] In some optional embodiments, the positioning mark 11 may also include at least one English letter. For example, the positioning mark 11 may be a single English letter or a combination of multiple English letters.

[0062] refer to Figure 4 , Figure 4 FIG. 1 is an operation flow chart of an embodiment of a system for electronic component failure analysis according to the present application. Figure 4 As shown, the operating process of the electronic component failure analysis system of the present application, or a method for electronic component failure analysis, includes the following steps:

[0063] S1. Ion beam microscope analysis system 30 creates a pattern with height differences, such as a recessed pattern, on the surface of electronic component 10 as a fiducial mark 11. The figure illustrates two types of fiducial marks 11: one, shown in the left box, consists of two trapezoids; the other, shown in the right box, consists of two circles of different sizes. In specific applications, either type can be selected.

[0064] S2. The X-ray analysis system 20 (e.g., XRM) analyzes the electronic component 10, simultaneously scans the positioning mark 11 and the electrical failure point (or defect) within the electronic component 10, and obtains a first image, which includes a first mark formed by the positioning mark 11.

[0065] Here, by finding the positioning mark 11 and checking the electrical failure point in the field of view of the XRM, the positional correlation between the two can be known, which can be used for subsequent cross-system coordinate positioning.

[0066] S3. The electronic component 10 is placed in the ion beam microscope analysis system 30 for scanning, and a second image is obtained. The second image includes the second mark formed by the positioning mark 11. After finding the image of the positioning mark 11, i.e., the second mark, the second image is then superimposed with the first image to achieve image alignment, thus completing the coordinate positioning of the two machines. Here, the first image obtained by XRM is applied back to the ion beam microscope analysis system 30 for image alignment, thus achieving the positioning between the two machines. At this point, the ion beam microscope analysis system 30 can confirm the location of the electrical failure point (e.g., a failed microbump).

[0067] S4. Simply click on a target object, such as a failed micro-bump, and the stage of the ion beam microscope analysis system 30 will automatically move to the corresponding position for destructive analysis.

[0068] S5. The ion beam microscope analysis system 30 cuts the electronic component 10 to obtain a cross-sectional image thereof. The cross-sectional image may include an image of an electrical failure point.

[0069] S6. Optionally, to verify the accuracy of the analysis position, IR (infrared) imaging can be used, for example, to perform a pattern verification analysis to complete the result verification and confirm the position is correct. It should be noted that this step is optional and not a necessary step in the operational process, but is only for effect verification. It should also be noted that this is not limited to IR verification; other devices, such as an X-ray analysis system 20 (e.g., XRM), can also be used for verification.

[0070] The above operational flow describes how the electronic component failure analysis system of the present application achieves coordinate positioning between the X-ray analysis system 20 and the ion beam microscope analysis system 30. One of the most critical steps in the above operational flow is to align the second image with the first image by overlapping the second mark with the first mark, thereby achieving coordinate positioning between the two systems. The selection and production of the positioning mark 11 used to generate the first and second marks is also an extremely important step. Positioning marks 11 with different patterns may affect the tightness of the overlap and alignment between the images. The following text will exemplify how to select the positioning mark pattern and its size parameters, etc., in conjunction with the accompanying drawings.

[0071] refer to Figure 5 and Figure 6 , Figure 5 is a schematic diagram of a graphical structure of a positioning mark according to an embodiment of the present application, Figure 6 Schematic diagram of the graphic structure of a positioning mark according to another embodiment of the present application.

[0072] like Figure 5As shown, the positioning mark 11 can include two trapezoids of equal or different sizes. For example, the two trapezoids are equal in size, with horizontal dimensions of 20 μm by 30 μm and a depth of 20 μm. The positioning mark 11 can be processed using an ion beam microscope analysis system 30. For example, the operating voltage and current of the ion beam microscope analysis system 30 are 30 kV and 30 nA, respectively, with a dose (ion beam energy) of 15 KeV, and the processing time is approximately 18 minutes.

[0073] like Figure 5 As shown, the positioning mark 11 may also include two circles of different sizes. This positioning mark 11 can be processed using an ion beam microscope analysis system 30. Exemplarily, the operating voltage and current of the ion beam microscope analysis system 30 are 30 kV and 30 nA, respectively. Exemplarily, the two circles have radii of 10 μm or 15 μm, respectively, and the dose is 15 KeV, and the processing time takes approximately 8 minutes. Alternatively, the two circles have radii of 25 μm and 30 μm, respectively, and the dose is 10 KeV, and the processing time takes approximately 12 minutes.

[0074] like Figure 5 As shown, the alignment mark 11 may also consist of multiple letters, such as "ASE." Exemplarily, the depth of the letters "ASE" is approximately 50 μm. This alignment mark 11 may be processed using an ion beam microscope analysis system 30. Exemplarily, the operating voltage and current of the ion beam microscope analysis system 30 are 30 kV and 30 nA, respectively, with a dose of 15 KeV, and the processing time is approximately 20 minutes.

[0075] like Figure 5 As shown, the positioning mark 11 may also be formed in an arrow shape, such as "→". The positioning mark 11 may be processed by an ion beam microscope analysis system 30. For example, the operating voltage and current of the ion beam microscope analysis system 30 are 30 kV and 30 nA, respectively, with a dose of 11 KeV, and the processing time is approximately 6 minutes.

[0076] like Figure 5 As shown, the positioning mark 11 can also consist of a single letter, such as "F." For example, the depth of the letter "F" is approximately 65.2 μm. This positioning mark 11 can be processed using an ion beam microscopy analysis system 30. For example, the operating voltage and current of the ion beam microscopy analysis system 30 are 30 kV and 30 nA, respectively, with a dose of 10 KeV, and the processing time is approximately 7 minutes.

[0077] like Figure 6 As shown, the positioning mark 11 can also be composed of one or more of the following letters "A, S, E, W, Y, H, Z, K, J" and arrow shapes, can be formed on silicon material, and can be verified by XRM to confirm that it can be well identified.

[0078] like Figure 6 As shown, the positioning mark 11 can also be composed of one or more of the following letters "A, S, E, W, Y, H, Z, K, J" and arrow shapes, can be formed on the bottom filler (Underfill), and can be verified by XRM to confirm that it can be well identified.

[0079] As described above, even considering that different shapes may affect the tightness of pattern alignment, there are still many options for the shape of the positioning mark 11. For example, some specific geometric shapes (such as two trapezoids or two circles of different sizes) can be used, letters such as A, E, F, H, K, S, W, Y, and Z can be used as the shape, and arrows can also be used as the shape. These shapes can clearly form images, have a high degree of tightness in image / image overlay alignment, and are not easily confused with the shape of bumps / micro-bumps, making them more suitable choices.

[0080] Next, this application proposes two verification embodiments, which are presented in the form of picture steps.

[0081] refer to Figure 7 , shows the operational flow of analyzing fan-out structure products using the electronic component failure analysis system of the present application. Figure 7 The operation flow shown is similar to Figure 4 The following are the differences between the two procedures:

[0082] Figure 4 In the illustrated operation flow, a micro-bump is selected as a target object. Next, the ion beam microscope analysis system 30 performs destructive analysis on the micro-bump as the target object.

[0083] Figure 7 In the illustrated operation flow, a metal marker block is formed by depositing platinum (Pt), and the metal marker block is selected as a target object. Next, the ion beam microscope analysis system 30 performs destructive analysis based on the metal marker block as the target object.

[0084] refer to Figure 8 , shows the operational flow of using the electronic component failure analysis system of the present application to analyze products with a hybrid bonding structure. Figure 7 The operation flow shown is similar to Figure 8 The operation process shown is not repeated here.

[0085] Figure 7 and Figure 8The application of the present application to a fan-out structure product and a hybrid bonding structure product is shown respectively, but this does not constitute a limitation to the present application. The present application can actually be applied to all or most packaging structure products.

[0086] In summary, the electronic component failure analysis system and its operating procedures are described in this application. By creating positioning marks 11 on electronic components 10 and combining them with a positioning system 40, this application achieves accurate coordinate positioning between the X-ray analysis system 20 and the ion beam microscope analysis system 30, thereby enabling more accurate and efficient destructive analysis of products.

[0087] The advantages and objectives of this application include but are not limited to:

[0088] 1. Improve the efficiency of failure analysis, for example, ensure that the pre-positioning work takes less than 30 minutes;

[0089] 2. Improve the positioning accuracy of failure analysis, for example, to ensure that there is no artificial damage to the internal structure of the product and avoid human misjudgment caused by human defects;

[0090] 3. Reduce the error rate of position analysis, for example, avoid human misjudgment caused by position error, and avoid cost losses caused by cutting failure (the cost loss may reach tens of thousands of RMB per piece or more).

[0091] Although the present application has been described and illustrated with reference to specific embodiments of the present application, these descriptions and illustrations do not limit the present application. It will be clearly understood by those skilled in the art that various changes may be made and equivalent elements may be substituted within the embodiments without departing from the true spirit and scope of the present application as defined by the appended claims. The illustrations may not necessarily be drawn to scale. Due to variables in the manufacturing process, etc., there may be differences between the technical reproduction in the present application and the actual implementation. There may be other embodiments of the present application that are not specifically described. The description and illustrations should be regarded as illustrative, not restrictive. Modifications may be made to adapt specific circumstances, materials, compositions of matter, methods or processes to the objectives, spirit and scope of the present application. All such modifications fall within the scope of the appended claims. Although the methods disclosed herein have been described with reference to specific operations performed in a specific order, it should be understood that these operations may be combined, subdivided or reordered to form equivalent methods without departing from the teachings of the present application. Therefore, unless specifically indicated herein, the order and grouping of operations do not limit the present application.

Claims

1. A system for analyzing electronic component failure, suitable for analyzing the causes of electrical failure of electronic components, comprising: a positioning mark, disposed on the surface of the electronic component; An X-ray analysis system for generating a first image by analyzing the electronic component, wherein the first image includes a first mark formed by the positioning mark; an ion beam microscope analysis system for generating a second image by analyzing the electronic component, wherein the second image includes a second mark formed by the positioning mark; as well as A positioning system is used to coincide the first mark with the second mark.

2. The electronic component failure analysis system according to claim 1, wherein: The X-ray analysis system is further configured to determine an electrical failure point by analyzing the electronic component.

3. The electronic component failure analysis system according to claim 2, wherein: The ion beam microscope analysis system is further used to perform analysis based on the electrical failure points.

4. The electronic component failure analysis system according to claim 1, wherein: The positioning system is further used to synchronize the coordinate axes of the X-ray analysis system and the ion beam microscope analysis system.

5. The electronic component failure analysis system according to claim 1, wherein: The first mark and the second mark are graphically identical.

6. The electronic component failure analysis system according to claim 1, wherein: The positioning mark is an asymmetrical pattern in at least one direction.

7. The electronic component failure analysis system according to claim 1, wherein: The positioning mark includes a first portion and a second portion, and the first portion and the second portion are different in shape from each other.

8. The electronic component failure analysis system according to claim 1, wherein: The positioning mark is a concave pattern formed on the surface of the electronic component.

9. The electronic component failure analysis system according to claim 8, wherein: The ion beam microscope analysis system is further used to form the positioning mark on the surface of the electronic component by cutting the electronic component.

10. The electronic component failure analysis system according to claim 3, wherein: The ion beam microscope analysis system is further used to determine the target object on the electronic component based on the electrical failure point, and analyze the electronic component based on the target object, where the target object is a micro-bump in the electronic component or a metal marking block additionally formed on the electronic component.

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