Subminiature semiconductor laser system
By designing an ultra-miniature semiconductor laser system, utilizing mini-bar lasers to form laser modules, and combining heat dissipation and beam shaping, the problem of excessively large laser beauty device systems has been solved, achieving miniaturization of laser beauty devices and improving treatment effects.
Patent Information
- Application Number
- CN202423055158.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-11
- Publication Date
- 2025-10-21
- Estimated Expiration
- 2034-12-11
AI Technical Summary
In existing laser beauty devices, there are problems with the heat dissipation and beam shaping design of the mini-bar laser, resulting in a larger system size and difficulty in meeting miniaturization requirements.
An ultra-miniature semiconductor laser system was designed, which uses a laser module composed of mini-bar lasers and heat dissipation through an aluminum nitride substrate and a heat sink. Combined with a rectangular light guide for beam shaping, a 5×6 output matrix is formed, and the output spot is controlled at 10mm×20mm to achieve uniform laser energy distribution.
It achieves miniaturization of the laser system and stability of the output beam, improving treatment effectiveness and comfort, and is suitable for miniaturized handheld laser products for home or medical use.
Smart Images
Figure CN223462584U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to a semiconductor laser system, especially a super small semiconductor laser system for laser medical cosmetology field. BACKGROUND
[0002] The laser cosmetic instrument is a device for using the concentrated heating function of laser beam to carry out cosmetology on skin.
[0003] With the progress of laser technology, mini-bar laser appears, that is, mini-bar bar-shaped laser diode is a compact laser diode, has the advantages of high power density, easy integration, good stability, small size and the like, and can be applied to handheld household laser cosmetic instrument products.
[0004] However, when the mini-bar laser is applied, the heat dissipation and beam shaping need to be redesigned. UTILITY MODEL CONTENTS
[0005] The utility model aims at providing a super small semiconductor laser system, which is designed around the application of mini-bar laser for heat dissipation and beam shaping, so as to meet the application requirements of laser cosmetic instrument and be applied to the fields of laser hair removal, whitening and skin tendering.
[0006] To achieve the above utility model purposes, the utility model provides a super small semiconductor laser system, which comprises a laser and a beam shaping device.
[0007] The laser is a laser module composed of a plurality of mini-bar lasers.
[0008] The beam shaping device is arranged on the light emitting side of the laser.
[0009] As a further improvement of the utility model, the laser module is composed of a plurality of mini-bar lasers in series.
[0010] Further, the single mini-bar laser has a plurality of light emitting points, and the light emitting points of the single mini-bar laser are arranged along the X-axis direction.
[0011] The plurality of mini-bar lasers are arranged along the Y-axis direction.
[0012] The X-axis and the Y-axis are orthogonal.
[0013] Further, the single mini-bar laser has five light emitting points.
[0014] The laser module has 6 mini-bar lasers;
[0015] The light-emitting side of the laser module forms a 5×6 light-emitting matrix.
[0016] Furthermore, the mini-bar lasers are arranged at equal intervals of 2 mm.
[0017] As a further improvement of the present invention, several mini-bar lasers are welded on a substrate at the same time, and a heat sink is provided on the other side of the substrate.
[0018] Furthermore, the substrate is an aluminum nitride substrate; the aluminum nitride substrate is glued to the heat sink by heat-conducting silver glue;
[0019] The radiator is a VC heat sink or a copper fin radiator.
[0020] As a further improvement of the present invention, the beam shaping device is a light guide;
[0021] One side of the light guide faces the light-emitting surface of the laser module, and the other side of the light guide is provided with an output window;
[0022] The light guide is a rectangular light guide.
[0023] The laser module of the laser is provided with a beam shaping device, which is mainly a light guide 4, and the other side of the light guide 4 is an output window 5; the light guide 4 is a rectangular light guide, such as Figure 3 As shown, the 5×6 light output matrix is shaped by the light guide 4 to achieve a flat top output. The output spot is ultimately controlled to 10mm×20mm, and the energy distribution of the laser output is uniform. For details, see Figure 4 、 Figure 5 , and ultimately can work at a deeper depth, with better effects and greater comfort.
[0024] The ultra-small semiconductor laser system of the utility model has a small overall volume, a stable output laser spot, and a good therapeutic effect, and can be better applied to miniaturized handheld laser products for household or medical use.
[0025] The ultra-small semiconductor laser system of this utility model is still based on the principle of selective photothermal dynamics. By reasonably adjusting the laser wavelength energy pulse width, the laser can penetrate the surface of the skin and reach the hair root follicles. The light energy is absorbed by melanin and converted into heat energy that destroys the hair follicle tissue, thereby making the hair lose its regeneration ability to achieve the effect of hair removal.
[0026] The ultra-small semiconductor laser system of the present invention makes medical professional technology integrated, home-based and portable, resulting in lower costs and more private treatment. BRIEF DESCRIPTION OF THE DRAWINGS
[0027] Figure 1It is the whole structure schematic view of the super-mini semiconductor laser system of the utility model.
[0028] Figure 2 It is the whole structure schematic view of the semiconductor laser of the utility model.
[0029] Figure 3 It is the light beam shaping schematic view of the super-mini semiconductor laser system of the utility model.
[0030] Figure 4 It is the output energy intensity X axis direction schematic view of the super-mini semiconductor laser system of the utility model.
[0031] Figure 5 It is the output energy intensity Y axis direction schematic view of the super-mini semiconductor laser system of the utility model. DETAILED DESCRIPTION
[0032] The specific embodiment of the utility model is further explained in detail in combination with the drawings.
[0033] As Figure 1 The whole structure schematic view of the super-mini semiconductor laser system of the utility model, including laser and light beam shaping device, wherein, the laser includes laser module that is composed of several mini-bar laser 1, in the utility model, 6 mini-bar laser 1 is connected in series to form laser module, and each mini-bar laser 1 output power is 12-15W, and the overall laser module output power is 75W, in the laser module, mini-bar laser 1 is arranged at equal intervals with 2mm spacing, and single mini-bar laser 1 has 5 light emitting points, and then forms 5x6 light emitting matrix.
[0034] Mini-bar laser 1 is welded on aluminum nitride substrate 2, and then is glued on radiator 3 through heat-conducting silver glue, and the radiator can adopt VC heat plate or copper fin, so as to efficiently radiate laser module formed by mini-bar laser 1, and ensure the ambient temperature and output power of mini-bar laser 1.
[0035] Laser module is connected with external power supply through wire 12, mini-bar laser 1 is connected in series to form laser module, so that input voltage is multiplied, and input current can remain unchanged, so that the cross-sectional area requirement of wire 12 is lower, and finally the power requirement of laser module is 10-12V / 10-16A, and the power supply is more efficient and stable through external constant voltage adapter, and compared with the low-voltage high-current power supply scheme caused by parallel connection, the advantage is more obvious.
[0036] The laser module of the laser device is externally provided with a beam shaping device, mainly a light guide 4, and the other side of the light guide 4 is an output window 5. Figure 3 As shown in the figure, the 5*6 light output matrix is shaped by the light guide 4 to realize flat top output, and the output spot is finally controlled at 10mm*20mm, the energy distribution of the laser output is uniform, and details are shown in Figure 4 、 Figure 5 Finally, the depth of action can be deeper, and the effect and comfort are better.
[0037] The ultrasmall semiconductor laser system has small overall volume, stable output laser spot, good treatment effect, and can be better applied to household or medical small handheld laser products.
[0038] The above has specifically described the preferred embodiments of the utility model creation, but the utility model creation is not limited to the embodiments, and those skilled in the art can make various equivalent modifications or replacements without departing from the spirit of the utility model creation, and these equivalent modifications or replacements are all included in the range defined by the claims of the present application.
Claims
1. A miniature semiconductor laser system, characterized by The application relates to a laser and a light beam shaping device. The laser is a laser module composed of a plurality of mini-bar lasers. The light beam shaping device is arranged on the light emitting side of the laser.
2. The subminiature semiconductor laser system as claimed in claim 1, wherein The laser module is composed of a plurality of mini-bar lasers in series.
3. The sub-miniature semiconductor laser system of claim 2, wherein the first and second electrodes are formed on the substrate by a lift-off process. Each mini-bar laser has a plurality of light emitting points, and the light emitting points of each mini-bar laser are arranged along the X-axis direction. The plurality of mini-bar lasers are arranged along the Y-axis direction. The X-axis and the Y-axis are perpendicular to each other.
4. The sub-miniature semiconductor laser system of claim 3, wherein the first and second electrodes are formed of a material having a high reflectivity. Each mini-bar laser has five light emitting points. The laser module has six mini-bar lasers. The light emitting side of the laser module forms a 5*6 light emitting matrix.
5. The subminiature semiconductor laser system according to claim 3 or 4, wherein The mini-bar lasers are arranged at equal intervals with a spacing of 2mm.
6. The sub-miniature semiconductor laser system of claim 1, wherein The plurality of mini-bar lasers are simultaneously welded on a substrate, and the other side of the substrate is provided with a heat sink.
7. The sub-miniature semiconductor laser system of claim 6, wherein the first and second electrodes are formed of a material having a high reflectivity. The substrate is an aluminum nitride substrate, and the aluminum nitride substrate is glued to the heat sink through heat-conducting silver glue. The heat sink is a VC uniform heating plate heat sink or a copper fin heat sink.
8. The sub-miniature semiconductor laser system of claim 1, wherein the laser cavity is formed by a plurality of layers of semiconductor material. The light beam shaping device is a light guide. One side of the light guide faces the light emitting surface of the laser module, and the other side of the light guide is provided with an output window. The light guide is a rectangular light guide.