Novel server scene protection system

Abstract

The utility model relates to the technical field of server scene protection, and discloses a novel server scene protection system which comprises a clamping circuit composed of a first Zener diode, a second Zener diode, a third Zener diode, a fourth Zener diode, a fifth Zener diode and a first resistor. The power supply circuit consists of a triode, a first P-type MOS (Metal Oxide Semiconductor) tube, a second P-type MOS tube, a third P-type MOS tube, a fourth P-type MOS tube, a fifth P-type MOS tube and a third resistor; the signal protection circuit is used for protecting a data transmission line of a server from being influenced by electrostatic discharge; the control monitoring circuit is used for monitoring the state of the server in real time and giving an alarm when an abnormal condition is detected; the heat dissipation management circuit is used for ensuring that electronic elements work in a safe temperature range, and solves the problems of voltage protection and circuit electricity utilization safety in server scene operation.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of server scene protection discloses a novel server scene protection system. BACKGROUND

[0002] In the design and development of a new server scene protection system, a variety of challenges and shortcomings may be encountered, and the development and deployment of a new protection system often involves high costs, especially when advanced hardware protection measures (such as application-specific integrated circuits (ASICs) or field-programmable gate arrays (FPGAs)) are used. Some advanced protection technologies may increase power consumption, which is a consideration for companies pursuing green IT. In addition, for clamping voltage, the power supply is easily affected by the environment, the voltage stabilizing effect is poor, and the temperature of the triode also changes with temperature changes, resulting in many difficulties in the deployment of server scenes.

[0003] For example, the utility model discloses a voltage clamping circuit in the prior art with the authorization announcement number CN207473455U, which comprises a triode Q1, a voltage stabilizing diode DZ1, a current limiting resistor R1, an input voltage VB and an output voltage VCC. The base of the triode Q1 is connected to the input voltage VB through the current limiting resistor R1, the collector of the triode Q1 is connected to the input voltage VB, the emitter of the triode Q1 is connected to the output voltage VCC, and the base of the triode Q1 is grounded through the voltage stabilizing diode DZ1. The utility model adopts the method of using a current limiting resistor and a voltage stabilizing diode as a clamping circuit, and adds a triode for current amplification. By inputting a voltage greater than the conduction voltage of the voltage stabilizing diode, the voltage stabilizing diode stabilizes the output voltage within a set range, achieving the purpose of stabilizing the voltage without significantly increasing the output impedance, and providing a reliable and stable voltage signal for the subsequent circuit.

[0004] For example, the Chinese patent with the publication number CN117743045A discloses a test method and device for an integrated power protection switch for a server fan, which relates to the test technology field of an integrated power protection switch for a server fan. The method generates multiple test scenarios and determines a target scenario from the multiple test scenarios. The server fan is controlled to run in the target scenario, and the current and voltage values for the server fan are obtained. The test results for the integrated power protection switch are generated using the current and voltage values, thereby realizing the test of the integrated power protection switch for the server fan to improve the safety of the leakage protection for the server.

[0005] However, the breakdown voltage of the voltage stabilizing diode in the above patent changes with temperature. If the ambient temperature fluctuates greatly, the voltage stabilizing effect may be affected, and the parameters of the triode may change with temperature, which may affect the overall performance of the circuit. The server protection is integrated in the control of the cooling fan, and the input voltage is not optimized, and the problem of voltage fluctuation caused by the influence of the environment and temperature on the internal circuit of the server cannot be solved. Content of the Utility Model

[0006] This part aims to summarize some aspects of the embodiments of the utility model and briefly introduce some preferred embodiments. Some simplifications or omissions may be made in this part and the abstract of the specification and the utility model name to avoid obscuring the purpose of this part, the abstract of the specification and the utility model name, and such simplifications or omissions cannot be used to limit the scope of the utility model.

[0007] To solve the above technical problems, the main purpose of the utility model is to provide a novel server scene protection system, comprising:

[0008] The clamping circuit comprises a first Zener diode, a second Zener diode, a third Zener diode, a fourth Zener diode, a fifth Zener diode and a first resistor;

[0009] The power supply circuit comprises a triode, a first P-type MOS tube, a second P-type MOS tube, a third P-type MOS tube, a fourth P-type MOS tube, a fifth P-type MOS tube and a third resistor;

[0010] The signal protection circuit is used to protect the data transmission line of the server from the influence of electrostatic discharge;

[0011] The control monitoring circuit is used to monitor the state of the server in real time and issue an alarm when an abnormal condition is detected;

[0012] The heat dissipation management circuit is used to ensure that the electronic components work in a safe temperature range.

[0013] As a preferred scheme of the novel server scene protection system of the utility model, wherein:

[0014] The Zener diodes are connected in series to provide a stable reference voltage;

[0015] The first Zener diode, the second Zener diode, the third Zener diode, the fourth Zener diode and the fifth Zener diode are connected in series;

[0016] One end of the fifth Zener diode is connected to a voltage source, and the other end is connected to the fourth Zener diode;

[0017] One end of the first Zener diode is connected to one end of the second Zener diode, and the other end is connected to the first resistor;

[0018] One end of the first resistor is connected to the base of the triode, and the other end is connected to the wiring line;

[0019] The emitter of the triode is connected to one end of the second resistor, and the collector of the triode is connected to the voltage source;

[0020] The other end of the second resistor is connected to the ground line.

[0021] As a preferred scheme of the novel server scene protection system of the utility model, wherein:

[0022] The MOS tube and the third resistor are used for providing a constant current;

[0023] The source of the first P-type MOS tube is connected to the voltage source;

[0024] The gate of the first P-type MOS tube is connected to the gate of the third P-type MOS tube and the gate of the first P-type MOS tube;

[0025] The drain of the first P-type MOS tube is connected to the emitter of the triode;

[0026] The source of the third P-type MOS tube is connected to the voltage source;

[0027] The drain of the third P-type MOS tube is connected to the drain of the fourth P-type MOS tube;

[0028] The source of the fourth P-type MOS tube is connected to one end of the third resistor, and the gate of the fourth P-type MOS tube is connected to the gate of the fifth P-type MOS tube;

[0029] The other end of the third resistor is connected to the source of the fifth P-type MOS tube.

[0030] As a preferred scheme of the novel server scene protection system of the utility model, wherein:

[0031] The source of the first P-type MOS tube is connected to the voltage source;

[0032] The gate of the first P-type MOS tube is connected to the gate of the fifth P-type MOS tube;

[0033] The drain of the first P-type MOS tube is connected to the gate of the fifth P-type MOS tube;

[0034] If the triode is turned on, the clamping voltage is the sum of five times the Zener diode breakdown voltage, the triode base-emitter voltage and the voltage across the first resistor;

[0035] The breakdown voltage of the first, second, third, fourth and fifth Zener diodes is negative temperature coefficient;

[0036] The base-emitter voltage of the triode is negative temperature coefficient;

[0037] The current flowing through the first resistor is positive temperature coefficient.

[0038] As a preferred scheme of the novel server scene protection system,

[0039] The signal protection circuit comprises a bidirectional TVS array, a unidirectional TVS diode and an ESD suppression unit;

[0040] The bidirectional TVS array comprises a first TVS diode and a second TVS diode, the first TVS diode is connected to a positive signal line, and the second TVS diode is connected to a negative signal line;

[0041] The unidirectional TVS comprises a third TVS diode, one end of the third TVS diode is connected to a signal line, and the other end is grounded;

[0042] The ESD suppression unit is used for resisting electrostatic discharge and comprises a transient suppression diode and a polymer ESD suppressor.

[0043] As a preferred scheme of the novel server scene protection system,

[0044] The control monitoring circuit comprises a microcontroller, a temperature sensor, a voltage sensor, an LED and a communication terminal;

[0045] The microcontroller is used for processing sensor data and controlling voltage input and heat dissipation management modules;

[0046] The temperature sensor is used for collecting temperature data of the novel server scene protection system circuit;

[0047] The LED is used for providing visual alarm.

[0048] As a preferred scheme of the novel server scene protection system,

[0049] The heat dissipation management circuit comprises a heat sink, a fan and a temperature control switch;

[0050] The heat sink is used for passive heat dissipation of a low-power circuit of the novel server scene protection system, and the low-power circuit comprises a voltage clamping circuit and a control monitoring circuit;

[0051] The fan is used for active heat dissipation of the microcontroller and the power supply circuit;

[0052] The temperature control switch is used for receiving real-time temperature transmitted by a temperature sensor and heat dissipation instruction output by a microcontroller, and controlling fan rotating speed according to the heat dissipation instruction.

[0053] The utility model discloses beneficial effect has:

[0054] Since the Zener breakdown voltage VD of Zener diode and the base-emitter voltage VBE of triode are both negative temperature coefficient, and the current I is positive temperature coefficient, so the clamping voltage is little affected by temperature, and the resistance limiting circuit current prevents the circuit from being burnt out by excessive current, protects the server scene, guarantees the stability of voltage input from the input power supply, and reduces the voltage fluctuation problem of internal circuit of the server scene caused by temperature and environmental change. BRIEF DESCRIPTION OF DRAWINGS

[0055] In order to more clearly illustrate the technical scheme of the embodiments of the utility model, the following will be briefly introduced the drawings needed to be used in the embodiment description, obviously, the drawings in the following description are only some embodiments of the utility model, and for those skilled in the art, other drawings can also be obtained according to these drawings without paying the creative labor, wherein:

[0056] Figure 1 It is the principle diagram of a novel server scene protection system of the utility model;

[0057] Figure 2 It is the current source circuit principle diagram of a novel server scene protection system of the utility model;

[0058] Figure 3 It is the two-way TVS circuit topological diagram of a novel server scene protection system of the utility model;

[0059] Figure 4 It is the single-phase TVS circuit topological diagram of a novel server scene protection system of the utility model. DETAILED DESCRIPTION

[0060] In order to make the above purpose, features and advantages of the utility model more obvious and easy to understand, the specific embodiment of the utility model will be described in detail in the following with the drawings of the specification.

[0061] In the following description, a lot of specific details are set forth in order to fully understand the utility model, but the utility model can also be implemented in other ways different from the description, and those skilled in the art can make similar generalization without departing from the connotation of the utility model, therefore, the utility model is not limited by the following disclosed specific embodiments.

[0062] Secondly, the "one embodiment" or "embodiment" referred to herein means a specific feature, structure, or characteristic under at least one implementation of the utility model. The "in one embodiment" appearing in different places in the specification does not mean the same embodiment, nor is it an embodiment that is independent or alternative to other embodiments.

[0063] Embodiment one:

[0064] As Figure 1 A new server scene protection system includes:

[0065] D1 is a first Zener diode;

[0066] D2 is a second Zener diode;

[0067] D3 is a third Zener diode;

[0068] D4 is a fourth Zener diode;

[0069] D5 is a fifth Zener diode;

[0070] Q1 is a first P-type MOS tube;

[0071] Q2 is a second P-type MOS tube;

[0072] Q3 is a third P-type MOS tube;

[0073] Q4 is a fourth P-type MOS tube;

[0074] Q5 is a fifth P-type MOS tube;

[0075] r1 is a first resistor;

[0076] r2 is a second resistor;

[0077] r3 is a third resistor;

[0078] The clamping circuit includes a first Zener diode, a second Zener diode, a third Zener diode, a fourth Zener diode, a fifth Zener diode and a first resistor, wherein the Zener diode is connected in series to provide a stable reference voltage;

[0079] Wherein, the first Zener diode, the second Zener diode, the third Zener diode, the fourth Zener diode, the fifth Zener diode are connected in series;

[0080] One end of the fifth Zener diode is connected to a voltage source, and the other end is connected to the fourth Zener diode;

[0081] One end of the first Zener diode is connected to one end of the second Zener diode, and the other end is connected to the first resistor;

[0082] When the reverse voltage across a Zener diode exceeds its breakdown voltage, the Zener diode begins to conduct and maintains a relatively constant voltage drop within its operating region, used to achieve voltage clamping or regulation at a higher voltage level.

[0083] The Zener breakdown voltage of a single Zener diode is 5.5V, and if you connect 5 such Zener diodes in series, their combined effect can be summarized as follows:

[0084] Each Zener diode has a breakdown voltage of 5.5V;

[0085] After being connected in series, the total breakdown voltage will be the sum of the breakdown voltage of each diode, i.e. 5.5x5 = 27.5, 5.5Vx5 = 27.5V.

[0086] The power handling capability of a single Zener diode is limited, and when multiple Zener diodes are connected in series, the total power handling capability increases accordingly, because the current flowing through each diode is the same, but each diode bears part of the total voltage, thereby dispersing the heat load.

[0087] The series connection of Zener diodes can improve the stability and accuracy of the overall circuit to some extent, especially in the case of temperature changes or fluctuations in other external conditions.

[0088] Since each Zener diode has a certain temperature coefficient, using them in series can help reduce the impact of the overall temperature coefficient, making the output voltage more stable.

[0089] If one of the Zener diodes fails (e.g. short circuit), the entire circuit will not immediately fail. Other Zener diodes can still continue to work until the problem is discovered and repaired, this redundancy improves the reliability and safety of the system;

[0090] When the transistor Q1 is just turned on, VCC_CLAMP = 5VD + VBE + IR1, where VD is the Zener breakdown voltage of the Zener diode, VBE is the base-emitter voltage of the transistor, and I is the positive temperature coefficient current.

[0091] Example Two:

[0092] As shown in Figure 2 A new server scenario protection system also includes a power supply circuit:

[0093] The power supply circuit includes a transistor, a first P-type MOS tube, a second P-type MOS tube, a third P-type MOS tube, a fourth P-type MOS tube, a fifth P-type MOS tube, and a third resistor, wherein the MOS tube and the third resistor are used to provide a constant current;

[0094] The current source circuit composed of the first P-type MOS transistor, the second P-type MOS transistor, the third P-type MOS transistor, the fourth P-type MOS transistor, the fifth P-type MOS transistor and the third resistor is used to provide a constant current.

[0095] The current source is used to provide a constant current that is almost unchanged with load. This is very important for applications that require stable current supply, such as in bias circuits, amplifiers or other analog circuits.

[0096] When the MOS transistor is used as a current source, the current flowing through it can be controlled by adjusting its gate voltage. If the input voltage suddenly rises, it will cause the current through the Zener diode to increase sharply, and excessive current will cause the Zener diode to be damaged or overheated. The current source limits the maximum current flowing through the first, second, third, fourth and fifth Zener diodes, thereby protecting the first, second, third, fourth and fifth Zener diodes from overcurrent damage.

[0097] The breakdown voltage of the Zener diode changes with temperature. By using a current source to limit the current, the voltage fluctuation caused by temperature changes can be reduced to some extent.

[0098] This is because the current provided by the current source is relatively stable and will not change significantly due to temperature changes, thereby making the operating point of the Zener diode more stable.

[0099] By using the first, second, third, fourth and fifth P-type MOS transistors as current sources, the current can be more effectively controlled because the voltage drop in the on state is smaller. By adjusting the operating point of the first, second, third, fourth and fifth P-type MOS transistors, it can be made to work in the linear region or saturation region to achieve different current regulation characteristics.

[0100] The first, second, third, fourth and fifth Zener diodes are connected in series.

[0101] Further, one end of the fifth Zener diode is connected to a voltage source, and the other end is connected to the fourth Zener diode.

[0102] One end of the first Zener diode is connected to one end of the second Zener diode, and the other end is connected to the first resistor.

[0103] Further, one end of the first resistor is connected to the base of the transistor, and the other end is connected to the wire.

[0104] The emitter of the triode is connected to one end of the second resistor, and the collector of the triode is connected to the voltage source.

[0105] The other end of the second resistor is connected to the ground wire.

[0106] The source of the first P-type MOS tube is connected to the voltage source.

[0107] The gate of the first P-type MOS tube is connected to the gate of the third P-type MOS tube and the gate of the first P-type MOS tube.

[0108] The drain of the first P-type MOS tube is connected to the emitter of the triode.

[0109] The source of the third P-type MOS tube is connected to the voltage source.

[0110] The drain of the third P-type MOS tube is connected to the drain of the fourth P-type MOS tube.

[0111] The source of the fourth P-type MOS tube is connected to one end of the third resistor, and the gate of the fourth P-type MOS tube is connected to the gate of the fifth P-type MOS tube.

[0112] The other end of the third resistor is connected to the source of the fifth P-type MOS tube.

[0113] The source of the first P-type MOS tube is connected to the voltage source.

[0114] The gate of the first P-type MOS tube is connected to the gate of the fifth P-type MOS tube.

[0115] The drain of the first P-type MOS tube is connected to the gate of the fifth P-type MOS tube.

[0116] Since the Zener breakdown voltage VD of the first, second, third, fourth and fifth Zener diodes and the base-emitter voltage VBE of the triode are all negative temperature coefficients, and the current I is a positive temperature coefficient, VCC_CLAMP is not greatly affected by temperature, and the resistor R1 limits the circuit current to prevent the circuit from being burned out by excessive current;

[0117] Example three:

[0118] The signal protection circuit is used for protecting the data transmission line of the server from the influence of electrostatic discharge;

[0119] The signal protection circuit includes a bidirectional TVS array, a unidirectional TVS diode and an ESD suppression unit.

[0120] As shown in Figure 3 , the bidirectional TVS array includes a first TVS diode and a second TVS diode, the first TVS diode is connected to the positive signal line, and the second TVS diode is connected to the negative signal line.

[0121] The bidirectional TVS array

[0122] Function: Provide symmetric protection for high-speed differential signals;

[0123] The first TVS diode is connected to the positive signal line, and the second TVS diode is connected to the negative signal line;

[0124] When the voltage exceeds the preset threshold, the TVS diode is turned on, and the current is discharged to the ground, thereby protecting the backend circuit;

[0125] As shown in Figure 4 The unidirectional TVS includes a third TVS diode, one end of which is connected to the signal line and the other end is grounded;

[0126] The unidirectional TVS diode is used for protection of the single-ended signal line, and the third TVS diode (D3) is connected to the signal line at one end and grounded at the other end. When an overvoltage occurs on the signal line, the TVS diode will discharge current to the ground;

[0127] The ESD suppression unit is used to resist electrostatic discharge and includes a transient suppression diode and a polymer ESD suppressor. When an ESD event occurs, the TSS and PESD will respond quickly and discharge current to the ground, thereby protecting the signal line;

[0128] The control monitoring circuit is used to monitor the server status in real time and issue an alarm when an abnormal condition is detected;

[0129] The control monitoring circuit includes a microcontroller, a temperature sensor, a voltage sensor, an LED, and a communication terminal;

[0130] The microcontroller is used to process sensor data and control voltage input and heat dissipation management modules. The MCU reads data from the temperature sensor and the voltage sensor, and controls the fan speed and issues an alarm according to the preset conditions;

[0131] The temperature sensor is used to collect temperature data of the new server scene protection system circuit. The temperature sensor detects the ambient temperature and sends a signal to the MCU;

[0132] The LED is used to provide a visual alarm. When the MCU detects an abnormal condition, the LED is lit as a warning;

[0133] The communication terminal is used for communication with remote monitoring devices. The communication terminal (such as RS-485 or Ethernet interface) allows the MCU to send system status information to a remote server or management system through the communication terminal;

[0134] The heat dissipation management circuit is used to ensure that electronic components work within a safe temperature range;

[0135] The heat dissipation management circuit includes a heat sink, a fan, and a temperature control switch;

[0136] The heat sink is used for passive heat dissipation of the low-power circuit of the new server scene protection system, and the low-power circuit includes a voltage clamping circuit and a control monitoring circuit. By increasing the surface area, the low-power circuit helps to dissipate heat;

[0137] The fan is used for active heat dissipation of the microcontroller and the power supply circuit. When the fan is running, it carries away the heat generated by the microcontroller and the power supply circuit;

[0138] The temperature control switch is used to receive the real-time temperature transmitted by the temperature sensor and the heat dissipation instruction output by the microcontroller, and control the fan speed according to the heat dissipation instruction. The temperature control switch receives the signal from the temperature sensor and adjusts the speed of the fan according to the instruction issued by the MCU.

[0139] Importantly, it should be noted that the constructions and arrangements of the present application shown in the various different exemplary embodiments are merely illustrative. Although only two embodiments have been described in detail herein, persons of ordinary skill in the art, having the benefit of the present disclosure, will readily appreciate that many modifications are possible without materially departing from the novel teachings and advantages of the subject matter described in this application. For example, dimensions, sizes, structures, shapes and proportions of the various elements, parameters (e.g., temperatures, pressures, etc.), mounting arrangements, materials, colors, orientations, etc. can be changed as desired. For example, elements shown as integrally formed can be constructed of multiple parts or elements, the position of elements can be reversed or otherwise changed, and the nature or number of elements or positions can be modified or changed. Accordingly, all such modifications are intended to be included within the scope of the present inventive subject matter. The order or sequence of any process or method steps can be changed or re-sequenced without departing from the generality of the application. In the claims, any means-plus-function clause is intended to cover the structures described herein as performing the recited function and not only structural equivalents but also equivalent structures. Other substitutions, modifications, changes and omissions can be made in the design, operating conditions and arrangement of the exemplary embodiments without departing from the scope of the present inventive subject matter. Accordingly, the present inventive subject matter is not limited to particular embodiments described, but extends to various modifications, combinations and permutations of the described embodiments.

[0140] Furthermore, in order to provide a concise description of exemplary embodiments, all features of the actual implementation can not be described (i.e., those features not relevant to the best mode of carrying out the present inventive subject matter currently under consideration, or those features not relevant to the implementation of the present inventive subject matter).

[0141] It is to be understood that the development process can involve both substantial design and experimental efforts. As such, in embodiments of the application, design synthesis and / or experimental tests can be conducted to help improve the performance of the devices. Efforts can be directed to concurrently improving one or more performance characteristics of the devices.

[0142] It should be noted that the above examples are only used to illustrate the technical solutions of the present application but not limit the present application. Although the present application has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present application can be modified or equivalently replaced without departing from the spirit and scope of the present application, and all modifications and equivalent replacements should be included in the scope of the claims of the present application.

Claims

1. A novel server scenario protection system, characterized by, Comprise: Clamp circuit, including first zener diode, second zener diode, third zener diode, fourth zener diode, fifth zener diode and first resistance; Power supply circuit including transistor, first P-type MOS tube, second P-type MOS tube, third P-type MOS tube, fourth P-type MOS tube, fifth P-type MOS tube, third resistance; Signal protection circuit for protecting the data transmission line of the server from electrostatic discharge; Control monitoring circuit for real-time monitoring of server status and issuing an alarm when detecting abnormal conditions; Heat dissipation management circuit for ensuring that electronic components work in a safe temperature range.

2. A new server scene protection system according to claim 1, characterized in that: The zener diode is connected in series to provide a stable reference voltage; The first zener diode, the second zener diode, the third zener diode, the fourth zener diode, the fifth zener diode are connected in series; One end of the fifth zener diode is connected to the voltage source, and the other end is connected to the fourth zener diode; One end of the first zener diode is connected to one end of the second zener diode, and the other end is connected to the first resistance; One end of the first resistance is connected to the base of the transistor, and the other end is connected to the wire; The emitter of the transistor is connected to one end of the second resistance, and the collector of the transistor is connected to the voltage source; The other end of the second resistance is connected to the ground wire.

3. A new server scene protection system according to claim 2, characterized in that: The MOS tube and the third resistance are used to provide a constant current; The source of the first P-type MOS tube is connected to the voltage source; The gate of the first P-type MOS tube is connected to the gate of the third P-type MOS tube and the gate of the first P-type MOS tube; The drain of the first P-type MOS tube is connected to the emitter of the transistor; The source of the third P-type MOS tube is connected to the voltage source; The drain of the third P-type MOS tube is connected to the drain of the fourth P-type MOS tube; The source of the fourth P-type MOS tube is connected to one end of the third resistance, and the gate of the fourth P-type MOS tube is connected to the gate of the fifth P-type MOS tube; The other end of the third resistance is connected to the source of the fifth P-type MOS tube.

4. A new server scene protection system according to claim 3, characterized in that: The source of the first P-type MOS tube is connected to the voltage source; The gate of the first P-type MOS tube is connected to the gate of the fifth P-type MOS tube; The drain of the first P-type MOS tube is connected to the gate of the fifth P-type MOS tube; If the transistor is turned on, the clamping voltage is five times the zener diode breakdown voltage plus the base-emitter voltage of the transistor and the voltage across the first resistance; The breakdown voltage of the first zener diode, the second zener diode, the third zener diode, the fourth zener diode, the fifth zener diode is negative temperature coefficient; The base-emitter voltage of the transistor is negative temperature coefficient; The current flowing through the first resistance is positive temperature coefficient.

5. A new server scene protection system according to claim 4, characterized in that: The signal protection circuit comprises a bidirectional TVS array, a unidirectional TVS diode and an ESD suppression unit; The bidirectional TVS array comprises a first TVS diode and a second TVS diode, the first TVS diode is connected to the positive signal line, and the second TVS diode is connected to the negative signal line; The unidirectional TVS comprises a third TVS diode, one end of the third TVS diode is connected to the signal line, and the other end is grounded; The ESD suppression unit is used for resisting electrostatic discharge and comprises a transient suppression diode and a polymer ESD suppressor.

6. The novel server scenario protection system according to claim 5, characterized in that: The control monitoring circuit comprises a microcontroller, a temperature sensor, a voltage sensor, an LED and a communication terminal; The microcontroller is used for processing sensor data and controlling the voltage input and heat dissipation management module; The temperature sensor is used for collecting temperature data of the novel server scenario protection system circuit; The LED is used for providing visual alarm.

7. The novel server scenario protection system according to claim 6, characterized in that: The heat dissipation management circuit comprises a heat sink, a fan and a temperature control switch; The heat sink is used for passive heat dissipation of the low-power circuit of the novel server scenario protection system, and the low-power circuit comprises a voltage clamping circuit and a control monitoring circuit; The fan is used for active heat dissipation of the microcontroller and the power supply circuit; The temperature control switch is used for receiving real-time temperature transmitted by the temperature sensor and heat dissipation instruction output by the microcontroller, and controlling the fan speed according to the heat dissipation instruction.

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