A voltage stabilizing circuit based on current feedback

Abstract

This invention discloses a voltage regulator circuit based on current feedback; it includes a sampling module, an adjustment module, and a feedback control module, specifically including high-voltage MOSFETs HV_PM1, HV_PM2, HV_PM3, and HV_NM1, constant-voltage MOSFETs NM1, NM2, NM3, and NM4, a Zener diode Z1, resistors R0, R1, and R3, and bias currents I1, I2, and I3. This invention operates when the input voltage is lower than the reverse breakdown voltage V of the Zener diode Z1. Z1 When the input voltage is high, the output voltage equals the input voltage, resulting in a small voltage drop. At high input voltages, the current flowing through the Zener diode Z1 is sampled, and the gate-source voltage difference of the MOSFET is adjusted via a feedback loop. This changes the on-resistance of the MOSFET, stabilizing the output voltage VOUT at the reverse breakdown voltage V0 of the Zener diode Z1. Z1 Approximately 5.5V.

Description

Technical Field

[0001] This invention belongs to the field of electronic circuit technology, and specifically relates to a voltage regulator circuit based on current feedback. Background Technology

[0002] A voltage regulator circuit is a circuit that can maintain a constant output voltage when the input voltage and output load change. It is widely used in various electronic devices.

[0003] Current voltage regulator circuits require a constant output voltage, a large load-carrying capacity, a wide input voltage range, a relatively complex circuit structure, high power consumption, and certain requirements for manufacturing processes.

[0004] Currently, in low-to-medium power gate drive circuits, most of the devices used, including constant voltage transistors, high voltage transistors, and power transistors, are thin-gate oxide devices with a gate-source breakdown voltage of around 5.5V. In gate drive circuits, the lower the on-resistance of the power transistor, the better. With a fixed power transistor size, its on-resistance is inversely proportional to the overdrive voltage (VGS - VTH), meaning the higher the gate-source voltage, the lower the on-resistance and the lower the conduction loss. Simultaneously, its gate-source voltage (VGS) cannot exceed its gate-source breakdown voltage. Therefore, it is necessary to generate the highest possible voltage to power the drive circuit without exceeding the device's gate-source breakdown voltage. In gate drive circuits with a wide input voltage range, a simple, wide-input-range voltage regulator circuit needs to be designed to achieve stable and reliable power supply. This voltage regulator circuit should output a voltage approximately equal to the input voltage with a small voltage drop when the input voltage is lower than the device's breakdown voltage (5.5V); and when the input voltage is higher than the device's breakdown voltage (5.5V), the output voltage should stabilize at the device's breakdown voltage (5.5V).

[0005] Currently, one method for implementing voltage regulation is using a low-dropout linear regulator, such as... Figure 1 As shown, linear regulators offer a wide input voltage range and high load capacity, but the inclusion of an error amplifier increases circuit complexity and design cost. Another approach uses a combination of a Zener diode and a transistor. The resulting output voltage is the Zener diode voltage minus the transistor's forward voltage (VBE). This means the output voltage depends not only on the Zener diode voltage but also on the transistor's forward voltage. Furthermore, a large resistor (megaohm level) needs to be connected in series with the Zener diode for current limiting. This current increases linearly with increasing input power supply voltage, and the quiescent current becomes significantly larger at high input power supply voltages.

[0006] In summary, among existing voltage regulator circuits, low dropout linear regulators have complex circuit structures and high design costs; the combination of Zener diodes and transistors results in many variables affecting the output, and the quiescent current increases linearly with the input voltage.

[0007] Therefore, this invention proposes a voltage regulator circuit based on current feedback. By using current feedback, the output voltage is approximately equal to the input voltage when the input voltage is low, resulting in a small voltage drop. When the input voltage is high, the output voltage is stabilized at around 5.5V (the reverse breakdown voltage of the Zener diode). The circuit has a simple structure, low manufacturing cost, low quiescent current, and low power consumption, making it suitable for circuit systems that require a constant voltage of around 5.5V. Summary of the Invention

[0008] The purpose of this invention is to provide a voltage regulator circuit based on current feedback to solve the problems mentioned in the background art.

[0009] To achieve the above objectives, the present invention provides the following technical solution: a voltage regulator circuit based on current feedback, comprising a sampling module, an adjustment module, and a feedback control module, specifically composed of MOSFETs HV_PM1, HV_PM2, HV_PM3, and HV_NM1, MOSFETs NM1, NM2, NM3, and NM4, a Zener diode Z1, resistors R0, R1, and R3, and bias currents I1, I2, and I3;

[0010] The adjustment module includes only the MOS transistor HV_PM3, and the gate of the MOS transistor HV_PM3 is connected to the resistor R0 in the feedback control module at point C;

[0011] The sampling module includes a bias current I2, a bias current I3, and a Zener diode Z1 connected to the output voltage VOUT. The bias current I3 is connected to the gate and drain of the MOSFET NM4. The source of the MOSFET NM4 is connected in series with the resistor R2. The bias current I2 is connected to the drain of the MOSFET NM3. The gate of the MOSFET NM3 is connected to the gate of the MOSFET NM4. The drain of the MOSFET NM3 is connected in series with the resistor R1. The positive terminal of the Zener diode Z1 is connected in series with the resistor R1 and connected at point A.

[0012] The feedback control module includes a resistor R0 connected to the input voltage VIN and a MOSFET HV_PM2. The resistor R0 and the MOSFET HV_PM2 are connected in parallel and then connected to the bias current I1 at point C. The drain of the MOSFET HV_PM2 is connected to the bias current I1 at point C. The gate of the MOSFET HV_PM2 is electrically connected to the gate and drain of the MOSFET HV_PM1, respectively. The drain of the MOSFET HV_PM1 is electrically connected to the drain of the MOSFET HV_NM1. The source of the MOSFET HV_NM1 is electrically connected to the drain of the MOSFET NM1. The gate of the MOSFET NM1 is connected to the gate of the MOSFET NM2. The gate and drain of the MOSFET NM2 are connected to the drain of the MOSFET NM3 in the sampling module.

[0013] Preferably, the current feedback-based voltage regulator circuit includes an input voltage VIN, GND, and an output voltage VOUT. The input voltage VIN is the chip's power supply voltage, with a wide input voltage range. The bias currents I3 and I2 are in the nA range, and the bias current I1 is in the uA range, where I3 = 12. <I1,R2=R1<R0。

[0014] Preferably, the source of the MOSFET HV_PM3 is electrically connected to the input voltage VIN, the drain of the MOSFET HV_PM3 is electrically connected to the output voltage VOUT, the other end of the resistor R2 is electrically connected to GND, the other end of the resistor R1 is electrically connected to GND, the bias current I1 is output to GND, the source of the MOSFET HV_PM2 is electrically connected to the input voltage VIN, the source of the MOSFET HV_PM1 is electrically connected to the input voltage VIN, the gate of the MOSFET HV_NM1 is electrically connected to the output voltage VOUT, the source of the MOSFET NM1 is electrically connected to GND, and the source of the MOSFET NM2 is electrically connected to GND.

[0015] Preferably, the adjustment module receives the input voltage VIN and adjusts the output voltage VOUT, and the sampling module samples the current signal from the output voltage VOUT through the Zener diode Z1.

[0016] Preferably, the feedback control module controls the adjustment module to perform voltage adjustment based on the sampled current signal from the sampling module, in order to stabilize the output voltage.

[0017] Preferably, a capacitor C1 is electrically connected between the output voltage VOUT and the GND, and the capacitor C1 is used to reduce the ripple of the output voltage VOUT.

[0018] Preferably, the MOS transistors HV_PM1, HV_PM2, HV_PM3, and HV_NM1 are high-voltage transistors, while the MOS transistors NM1, NM2, NM3, and NM4 are normal-voltage transistors.

[0019] Preferably, the input voltage VIN is low and less than the reverse breakdown voltage V of the Zener diode Z1. Z1 At this time, the Zener diode Z1 will not conduct, meaning no current flows through it. The currents flowing through MOSFETs NM3 and NM2 are I2a and I2b, respectively, and I2 = I2a + I2b. Since I3 = I2, and MOSFETs NM3 and NM4 have the same dimensions, most of the bias current I2 flows through MOSFET NM3. That is, I2a diverts most of the bias current I2. The voltages across resistors R1 and R2 are approximately equal, i.e., V... A Approximately equal to V B In the feedback control module, the current I2b of the MOSFET NM2 is very small, and the current Ip mirrored from the MOSFET NM1 and MOSFET HV_PM1 to the MOSFET HV_PM2 is also very small. Since the current Ip flowing through the MOSFET HV_PM2 is very small, and I1 = Ip + Ir, most of the bias current I1 flows through the resistor R0, and the voltage difference VIN-V across the resistor R0 is... C The voltage difference VIN-V between the gate and source of the MOS transistor HV_PM3 in the adjustment module is relatively large. C The voltage is relatively high. At this time, the MOSFET HV_PM3 operates in the linear region. For a MOSFET of a fixed size, the on-resistance of the MOSFET is inversely proportional to the gate-source voltage difference; that is, the larger the gate-source voltage difference, the smaller the on-resistance. Therefore, when the input voltage VIN is less than the reverse breakdown voltage V of the Zener diode Z1... Z1 At that time, the gate-source voltage difference of the MOS transistor HV_PM3 is relatively large, its on-resistance is relatively small, and the output voltage VOUT is approximately equal to the input voltage VIN.

[0020] Preferably, as the input voltage VIN increases, the output voltage VOUT increases accordingly. When the output voltage VOUT exceeds the voltage regulation voltage V of the Zener diode Z1, the voltage regulation continues. Z1 At this time, current flows through the Zener diode Z1, increasing the voltage difference across the resistor R1, i.e., V. A Increase. Because MOSFETs NM3 and NM4 are connected as current mirrors, the gate voltage of MOSFET NM3 is clamped to a fixed value, V.A The increase in voltage causes a decrease in the gate-source voltage, thus reducing the current I2a flowing through the MOSFET NM3 and increasing the current I2b flowing through the MOSFET NM2 in the feedback control module. Consequently, the current Ip mirrored from the MOSFET NM1 and MOSFET HV_PM1 to the MOSFET HV_PM2 increases. Therefore, only a small portion of the bias current I1 flows through the resistor R0, and the voltage difference VIN-V across the resistor R0... C The gate-source voltage difference VIN-V of the MOS transistor HV_PM3 in the adjustment module decreases. C As the impedance decreases, the on-resistance increases, and the output voltage VOUT decreases.

[0021] Preferably, the input voltage VIN is always greater than the reverse breakdown voltage V of the Zener diode Z1. Z1 When the output voltage VOUT exceeds V Z1 When the voltage drops, current flows through the Zener diode Z1, causing the output voltage VOUT to decrease through feedback; when the output voltage VOUT drops to a level less than the reverse breakdown voltage V of the Zener diode Z1... Z1 At this time, no current flows through the Zener diode Z1. The feedback control module increases the gate-source voltage difference of the MOSFET HV_PM3, causing the output voltage VOUT to rise again. This process repeats. By sampling the current flowing through the Zener diode Z1 and adjusting the gate-source voltage difference of the MOSFET HV_PM3 via the feedback loop, the output voltage VOUT is adjusted to the reverse breakdown voltage V of the Zener diode Z1. Z1 The voltage fluctuates in the vicinity, resulting in a voltage of approximately 5.5V.

[0022] Compared with the prior art, the beneficial effects of the present invention are:

[0023] This invention is a voltage regulator circuit based on current feedback, which samples the output voltage through a Zener diode, eliminating the need for additional circuitry to generate a reference voltage.

[0024] This invention has a wide input voltage range, and even when the input voltage is below the reverse breakdown voltage V of the Zener diode Z1... Z1 When the input voltage is high, the output voltage equals the input voltage, resulting in a small voltage drop. At high input voltages, the current flowing through the Zener diode Z1 is sampled, and the gate-source voltage difference of the MOSFET is adjusted via a feedback loop. This changes the on-resistance of the MOSFET, stabilizing the output voltage VOUT at the reverse breakdown voltage V0 of the Zener diode Z1. Z1 (Approximately 5.5V) can generate the highest possible voltage without exceeding the gate-source breakdown voltage of the device;

[0025] The circuit structure of this invention can use a smaller bias current to reduce power consumption. At the same time, since a constant current source is used for biasing, the static current will not increase with the increase of the input power supply voltage. It is suitable for most circuit systems, especially for use in gate drive circuits with medium and low power. Attached Figure Description

[0026] Figure 1 This is a circuit diagram in the prior art of the present invention;

[0027] Figure 2 This is a circuit diagram of the present invention;

[0028] Figure 3 This is a schematic diagram illustrating the change of the output voltage with the input voltage according to the present invention.

[0029] In the diagram: 201, sampling module; 202, adjustment module; 203, feedback control module. Detailed Implementation

[0030] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0031] Please see Figures 2-3 The present invention provides a technical solution: a voltage regulator circuit based on current feedback, comprising a sampling module 201, an adjustment module 202 and a feedback control module 203, specifically composed of MOSFETs HV_PM1, HV_PM2, HV_PM3 and HV_NM1, MOSFETs NM1, NM2, NM3 and NM4, a Zener diode Z1, resistors R0, R1 and R3, and bias currents I1, I2 and I3;

[0032] The adjustment module 202 includes only the MOS transistor HV_PM3, and the gate of the MOS transistor HV_PM3 is connected to the resistor R0 in the feedback control module 203 at point C;

[0033] The sampling module 201 includes a bias current I2, a bias current I3, and a Zener diode Z1 connected to the output voltage VOUT. The bias current I3 is connected to the gate and drain of the MOSFET NM4. The source of the MOSFET NM4 is connected in series with the resistor R2. The bias current I2 is connected to the drain of the MOSFET NM3. The gate of the MOSFET NM3 is connected to the gate of the MOSFET NM4. The drain of the MOSFET NM3 is connected in series with the resistor R1. The positive terminal of the Zener diode Z1 is connected in series with the resistor R1 and connected at point A.

[0034] The feedback control module 203 includes a resistor R0 connected to the input voltage VIN and a MOSFET HV_PM2. The resistor R0 and the MOSFET HV_PM2 are connected in parallel and then connected to the bias current I1 at point C. The drain of the MOSFET HV_PM2 is connected to the bias current I1 at point C. The gate of the MOSFET HV_PM2 is electrically connected to the gate and drain of the MOSFET HV_PM1, respectively. The drain of the MOSFET HV_PM1 is electrically connected to the drain of the MOSFET HV_NM1. The source of the MOSFET HV_NM1 is electrically connected to the drain of the MOSFET NM1. The gate of the MOSFET NM1 is connected to the gate of the MOSFET NM2. The gate and drain of the MOSFET NM2 are connected to the drain of the MOSFET NM3 in the sampling module 201.

[0035] To enable power supply and signal output to the system, and to set the bias current, in this embodiment, preferably, the current feedback-based voltage regulator circuit includes an input voltage VIN, GND, and an output voltage VOUT. The input voltage VIN is the chip's power supply voltage, with a wide input voltage range. The bias currents I3 and I2 are in the nA range, and the bias current I1 is in the uA range, where I3 = 12. <I1,R2=R1<R0。

[0036] To ensure system power supply, circuit safety, and signal input and output, in this embodiment, preferably, the source of MOSFET HV_PM3 is electrically connected to the input voltage VIN, the drain of MOSFET HV_PM3 is electrically connected to the output voltage VOUT, the other end of resistor R2 is electrically connected to GND, the other end of resistor R1 is electrically connected to GND, the bias current I1 is output to GND, the source of MOSFET HV_PM2 is electrically connected to the input voltage VIN, the source of MOSFET HV_PM1 is electrically connected to the input voltage VIN, the gate of MOSFET HV_NM1 is electrically connected to the output voltage VOUT, the source of MOSFET NM1 is electrically connected to GND, and the source of MOSFET NM2 is electrically connected to GND.

[0037] In order to achieve sampling and processing of the current signal, in this embodiment, preferably, the adjustment module 202 receives the input voltage VIN and adjusts the output voltage VOUT, and the sampling module 201 samples the current signal from the output voltage VOUT through the Zener diode Z1.

[0038] In order to achieve regulation based on the sampled current information, in this embodiment, preferably, the feedback control module 203 controls the adjustment module 202 to adjust the voltage based on the sampled current signal of the sampling module 201, so as to stabilize the output voltage.

[0039] In order to regulate the ripple of the output voltage VOUT, in this embodiment, preferably, a capacitor C1 is electrically connected between the output voltage VOUT and GND, and the capacitor C1 is used to reduce the ripple of the output voltage VOUT.

[0040] In order to enable the system to operate under high-voltage input conditions, in this embodiment, preferably, the MOS transistors HV_PM1, HV_PM2, HV_PM3 and HV_NM1 are high-voltage transistors, and the MOS transistors NM1, NM2, NM3 and NM4 are normal-voltage transistors.

[0041] The working principle and process of this invention: When the input voltage VIN is low and less than the reverse breakdown voltage V of the Zener diode Z1... Z1At this time, Zener diode Z1 will not conduct, meaning no current flows through it. The currents flowing through MOSFETs NM3 and NM2 are I2a and I2b respectively, and I2 = I2a + I2b. Since I3 = I2, and MOSFETs NM3 and NM4 have the same dimensions, most of the bias current I2 flows through MOSFET NM3. In other words, I2a diverts most of the bias current I2. The voltages across resistors R1 and R2 are approximately equal, i.e., V. A Approximately equal to V B In the feedback control module 203, the current I2b of MOSFET NM2 is very small, and the current Ip mirrored from MOSFET NM1 and MOSFET HV_PM1 to MOSFET HV_PM2 is also very small. Since the current Ip flowing through MOSFET HV_PM2 is very small, and I1 = Ip + Ir, most of the bias current I1 flows through resistor R0, and the voltage difference across resistor R0 is VIN-V. C The voltage difference VIN-V is relatively large, meaning it corresponds to the gate-source voltage difference VIN-V of the MOS transistor HV_PM3 in adjustment module 202. C The voltage is relatively high, and at this point, MOSFET HV_PM3 operates in the linear region. For a MOSFET of a fixed size, the on-resistance is inversely proportional to the gate-source voltage difference; that is, the larger the gate-source voltage difference, the smaller the on-resistance. Therefore, when the input voltage VIN is less than the reverse breakdown voltage V of the Zener diode Z1, the on-resistance will be lower. Z1 At this time, the gate-source voltage difference of MOSFET HV_PM3 is relatively large, its on-resistance is relatively small, and the output voltage VOUT is approximately equal to the input voltage VIN.

[0042] When the input voltage VIN increases, the output voltage VOUT increases accordingly. When the output voltage VOUT exceeds the Zener voltage V of the Zener diode Z1... Z1 At this time, current flows through Zener diode Z1, increasing the voltage difference across resistor R1, i.e., V. A The voltage increases because MOSFETs NM3 and NM4 are connected as current mirrors, and the gate voltage of MOSFET NM3 is clamped to a fixed value, V. A The increase in voltage causes a decrease in the gate-source voltage, thus reducing the current I2a flowing through MOSFET NM3 and increasing the current I2b flowing through MOSFET NM2 in feedback control module 203. This also increases the current Ip mirrored from MOSFET NM1 and MOSFET HV_PM1 to MOSFET HV_PM2. Consequently, only a small portion of the bias current I1 flows through resistor R0, resulting in a voltage difference VIN-V across resistor R0. C The gate-source voltage difference VIN-V of the MOS transistor HV_PM3 in module 202 is reduced. C As the impedance decreases, the on-resistance increases, and the output voltage VOUT decreases.

[0043] When the input voltage VIN is always greater than the reverse breakdown voltage V of the Zener diode Z1 Z1 When the output voltage VOUT exceeds V Z1 When the voltage drops, current flows through Zener diode Z1, causing the output voltage VOUT to decrease through feedback; when the output voltage VOUT drops below the reverse breakdown voltage V of Zener diode Z1... Z1 At this time, no current flows through the Zener diode Z1. The feedback control module 203 increases the gate-source voltage difference of the MOSFET HV_PM3, causing the output voltage VOUT to rise again. This process repeats. By sampling the current flowing through the Zener diode Z1 and adjusting the gate-source voltage difference of the MOSFET HV_PM3 through the feedback loop, the output voltage VOUT is kept at the reverse breakdown voltage V of the Zener diode Z1. Z1 The voltage fluctuates in the vicinity, resulting in a voltage of approximately 5.5V.

[0044] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A voltage regulator circuit based on current feedback, characterized in that: It includes a sampling module (201), an adjustment module (202), and a feedback control module (203), specifically including MOSFETs HV_PM1, HV_PM2, HV_PM3, and HV_NM1, MOSFETs NM1, NM2, NM3, and NM4, a Zener diode Z1, resistors R0, R1, and R2, and bias currents I1, I2, and I3. The adjustment module (202) includes only the MOS transistor HV_PM3, and the gate of the MOS transistor HV_PM3 is connected to the resistor R0 in the feedback control module (203) at point C; The sampling module (201) includes a bias current I2, a bias current I3, and a Zener diode Z1 connected to the output voltage VOUT. The bias current I3 is connected to the gate and drain of the MOSFET NM4. The source of the MOSFET NM4 is connected in series with the resistor R2. The bias current I2 is connected to the drain of the MOSFET NM3. The gate of the MOSFET NM3 is connected to the gate of the MOSFET NM4. The drain of the MOSFET NM3 is connected in series with the resistor R1. The positive terminal of the Zener diode Z1 is connected in series with the resistor R1 and connected at point A. The feedback control module (203) includes a resistor R0 connected to the input voltage VIN and a MOS transistor HV_PM2. The resistor R0 and the MOS transistor HV_PM2 are connected in parallel and then connected to the bias current I1 at point C. The drain of the MOS transistor HV_PM2 is connected to the bias current I1 at point C. The gate of the MOS transistor HV_PM2 is electrically connected to the gate and drain of the MOS transistor HV_PM1, respectively. The drain of the MOS transistor HV_PM1 is electrically connected to the drain of the MOS transistor HV_NM1. The source of the MOS transistor HV_NM1 is electrically connected to the drain of the MOS transistor NM1. The gate of the MOS transistor NM1 is connected to the gate of the MOS transistor NM2. The gate and drain of the MOS transistor NM2 are connected to the drain of the MOS transistor NM3 in the sampling module (201). The current feedback-based voltage regulator circuit includes input voltages VIN and GND, and an output voltage VOUT. The input voltage VIN is the chip's power supply voltage and has a wide range. The bias currents I3 and I2 are in the nA range, and the bias current I1 is in the uA range, where I3 = 12. <I1,R2=R1<R0; The source of the MOSFET HV_PM3 is electrically connected to the input voltage VIN, the drain of the MOSFET HV_PM3 is electrically connected to the output voltage VOUT, the other end of the resistor R2 is electrically connected to GND, the other end of the resistor R1 is electrically connected to GND, the bias current I1 is output to GND, the source of the MOSFET HV_PM2 is electrically connected to the input voltage VIN, the source of the MOSFET HV_PM1 is electrically connected to the input voltage VIN, the gate of the MOSFET HV_NM1 is electrically connected to the output voltage VOUT, the source of the MOSFET NM1 is electrically connected to GND, and the source of the MOSFET NM2 is electrically connected to GND.

2. The voltage regulator circuit based on current feedback according to claim 1, characterized in that: The adjustment module (202) receives the input voltage VIN and adjusts the output voltage VOUT; the sampling module (201) samples the current signal from the output voltage VOUT through the Zener diode Z1.

3. The voltage regulator circuit based on current feedback according to claim 2, characterized in that: The feedback control module (203) controls the adjustment module (202) to adjust the voltage according to the sampling current signal of the sampling module (201) in order to stabilize the output voltage.

4. The voltage regulator circuit based on current feedback according to claim 1, characterized in that: A capacitor C1 is electrically connected between the output voltage VOUT and GND. The capacitor C1 is used to reduce the ripple of the output voltage VOUT.

5. A voltage regulator circuit based on current feedback according to claim 1, characterized in that: The MOS transistors HV_PM1, HV_PM2, HV_PM3, and HV_NM1 are high-voltage transistors, while the MOS transistors NM1, NM2, NM3, and NM4 are normal-voltage transistors.

6. A voltage regulator circuit based on current feedback according to claim 1, characterized in that: When the input voltage VIN is low and less than the reverse breakdown voltage VZ1 of the Zener diode Z1, the Zener diode Z1 will not conduct, meaning no current flows through it. The currents flowing through MOSFET NM3 and MOSFET NM2 are I2a and I2b, respectively, and I2 = I2a + I2b. Since I3 = I2, and MOSFET NM3 and MOSFET NM4 have the same dimensions, most of the bias current I2 flows through MOSFET NM3, meaning I2a diverts most of the bias current I2. The voltages across resistors R1 and R2 are approximately equal, meaning VA is approximately equal to VB. The current I2b of MOSFET NM2 in the feedback control module (203) is very small, passing through the mirrors of MOSFET NM1 and MOSFET HV_PM1. Since the current Ip flowing through the MOS transistor HV_PM2 is also very small, and I1 = Ip + Ir, most of the bias current I1 flows through the resistor R0. The voltage difference VIN-VC across the resistor R0 is relatively large, meaning the gate-source voltage difference VIN-VC of the MOS transistor HV_PM3 in the adjustment module (202) is relatively large. At this time, the MOS transistor HV_PM3 is working in the linear region. For a MOS transistor with a fixed size, the on-resistance of the MOS transistor is inversely proportional to the gate-source voltage difference. That is, the larger the gate-source voltage difference, the smaller the on-resistance. Therefore, when the input voltage VIN is less than the reverse breakdown voltage VZ1 of the Zener diode Z1, the gate-source voltage difference of the MOS transistor HV_PM3 is relatively large, and its on-resistance is relatively small. The output voltage VOUT is approximately equal to the input voltage VIN.

7. A voltage regulator circuit based on current feedback according to claim 1, characterized in that: As the input voltage VIN increases, the output voltage VOUT also increases. When the output voltage VOUT exceeds the Zener diode Z1's voltage regulation voltage VZ1, current flows through the Zener diode Z1, increasing the voltage difference across resistor R1, i.e., VA increases. Since MOSFETs NM3 and NM4 are connected as current mirrors, the gate voltage of MOSFET NM3 is clamped to a fixed value. The increase in VA leads to a decrease in its gate-source voltage, thus increasing the current flowing through MOSFET NM3. As current I2a decreases, current I2b flowing through MOS transistor NM2 in the feedback control module (203) increases, and current Ip mirrored from MOS transistor NM1 and MOS transistor HV_PM1 to MOS transistor HV_PM2 increases. As a result, only a small portion of the bias current I1 flows through resistor R0, the voltage difference VIN-VC across resistor R0 decreases, the gate-source voltage difference VIN-VC of MOS transistor HV_PM3 in the adjustment module (202) decreases, the on-resistance increases, and the output voltage VOUT decreases.

8. A voltage regulator circuit based on current feedback according to claim 1, characterized in that: When the input voltage VIN is always greater than the reverse breakdown voltage VZ1 of the Zener diode Z1, and the output voltage VOUT exceeds VZ1, current flows through the Zener diode Z1, causing the output voltage VOUT to decrease through feedback. When the output voltage VOUT decreases to less than the reverse breakdown voltage VZ1 of the Zener diode Z1, no current flows through the Zener diode Z1, and the gate-source voltage difference of the MOSFET HV_PM3 increases through the feedback control module (203), causing the output voltage VOUT to rise again. This process repeats. By sampling the current flowing through the Zener diode Z1 and adjusting the gate-source voltage difference of the MOSFET HV_PM3 through the feedback loop, the output voltage VOUT fluctuates around the reverse breakdown voltage VZ1 of the Zener diode Z1, resulting in a voltage of approximately 5.5V.

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