Reverse table-shaped AT-type quartz high-frequency wafer and quartz crystal resonator
By optimizing the vibration region and electrode structure of the inverted trapezoidal AT-type quartz high-frequency crystal, the problems of excessive crystal impedance and poor frequency stability in high-frequency quartz crystal resonators were solved, achieving low power consumption and high frequency stability.
Patent Information
- Application Number
- CN202422282774.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-18
- Publication Date
- 2025-10-21
- Estimated Expiration
- 2034-09-18
AI Technical Summary
In the existing technology, as the frequency of quartz crystal resonators increases, the crystal impedance becomes too large, resulting in poor frequency stability over a wide temperature range, which fails to meet the application requirements.
A reverse-truncate AT-type quartz high-frequency crystal is designed. By setting the vibration region and electrodes, including a rectangular outer frame, excitation electrodes and lead-out electrodes, controlling the area ratio of the vibration region to the excitation electrodes, optimizing the width of the outer frame and the position of the connection part, unwanted vibration is reduced, crystal impedance is lowered, and Q value and frequency stability are improved.
It effectively reduces crystal impedance, increases Q value, reduces power consumption, enhances frequency stability over a wide temperature range, and ensures vibration effect and energy transfer in the vibration zone.
Smart Images
Figure CN223462999U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The application relates to the technical field of quartz crystal resonators, in particular to a reverse trapezoidal AT-type quartz high-frequency wafer and a quartz crystal resonator. BACKGROUND
[0002] A quartz crystal oscillator (English: crystal oscillator), commonly identified as OSC, is a complete oscillator with a built-in quartz crystal resonator and a matching circuit, and does not need to be matched and debugged with an oscillation circuit. The quartz crystal resonator is mainly composed of a quartz wafer, a base, a shell, conductive glue and the like.
[0003] The reverse trapezoidal AT-type quartz wafer refers to a structure in which a part (oscillation part) of an AT-cut quartz wafer is cut into a concave trapezoidal shape (opposite to the trapezoidal structure). At present, due to market demand, it is necessary to develop a quartz crystal resonator with higher frequency. The frequency range of the AT-type quartz high-frequency wafer matched with the quartz crystal resonator can start from 50MHz and expand to 500MHz, and the frequency is mainly related to the thickness of the concave groove. The thinner the groove, the higher the frequency.
[0004] With respect to the above related technology, as the product frequency is higher, there are problems of excessive crystal impedance (CI) and poor frequency stability in a wide temperature range, which cannot meet the requirements in the use process of the product. CONTENT OF THE INVENTION
[0005] In order to reduce the crystal impedance and improve the frequency stability in a wide temperature range, the purpose of the application is to provide a reverse trapezoidal AT-type quartz high-frequency wafer and a quartz crystal resonator.
[0006] In order to achieve these purposes and other advantages according to the present application, a reverse trapezoidal AT-type quartz high-frequency wafer is provided, which comprises:
[0007] A wafer body comprising a vibration region and an outer frame integrally formed on the outer periphery of the vibration region, wherein the outer frame has a rectangular outer periphery, and the two opposite sides of the vibration region are concavely arranged relative to the outer frame, and the width of the outer frame in the direction away from the vibration region is greater than 20μm.
[0008] A pair of electrodes, each electrode comprising an excitation electrode and a lead-out electrode connected by electricity, and a pair of excitation electrodes are arranged on the two opposite sides of the vibration region, and the projection in the thickness direction of the wafer body overlaps, wherein the area of each side of the vibration region is 1.5-9 times the area of the corresponding side excitation electrode.
[0009] Optionally, the shape of the vibration region is any one of a circle, an ellipse, a regular polygon and a rounded rectangle.
[0010] Optionally, the shape of the vibration region is rectangular, and the side ratio of the vibration region is 1:0.75-1.
[0011] Optionally, the long side of the vibration region ranges from 0.45 mm to 0.6 mm.
[0012] Optionally, the shape of the excitation electrode can be any one of a circle, an ellipse, a regular polygon, or a rounded rectangle.
[0013] Optionally, each lead-out electrode comprises a lead-out part and a connecting part, wherein:
[0014] One pair of the lead-out parts respectively extends from the corresponding excitation electrode and extends to one of the opposite end faces of the outer frame;
[0015] One pair of the connecting parts is arranged at one of the opposite end faces of the outer frame and is connected to the lead-out part of the corresponding end face.
[0016] Optionally, the distance between the end face of the outer frame with the connecting part and the vibration region is at least 30 μm, and the distance between the end face of the outer frame away from the connecting part and the vibration region ranges from 20 μm to 25 μm.
[0017] Optionally, the distance between the vibration region and the two end faces of the outer frame with the pair of lead-out parts is equal.
[0018] A quartz crystal resonator is also provided, comprising an inverse trapezoidal AT-type quartz high-frequency wafer.
[0019] In summary, the present application has at least one of the following beneficial technical effects:
[0020] By limiting the margin of the outer frame and combining the area ratio of the vibration region and the electrode, the vibration effect of the vibration region and the energy transmission effect are ensured, useless vibration is reduced, the crystal impedance is effectively reduced, the Q value is improved, the power consumption is reduced, and the frequency stability in a wide temperature range is relatively optimal; on the basis of ensuring the size accuracy, the strength and stability of the crystal are comprehensively improved. BRIEF DESCRIPTION OF DRAWINGS
[0021] Figure 1 is a structural schematic view of the inverse trapezoidal AT-type quartz high-frequency wafer described in one of the technical solutions of the present application;
[0022] Figure 2 is Figure 1 a sectional view of line A-A in
[0023] Figure 3 is a front view of the high-frequency wafer with a rounded rectangular vibration region described in one of the technical solutions of the present application;
[0024] Figure 4 is a front view of a high-frequency wafer with a rectangular vibration area according to one of the technical solutions of the present application;
[0025] Figure 5 is a front view of a high-frequency wafer with a circular vibration area according to one of the technical solutions of the present application;
[0026] Figure 6 is a front view of a high-frequency wafer with an elliptical vibration area according to one of the technical solutions of the present application;
[0027] Figure 7 is a structural schematic diagram of a quartz crystal resonator according to one of the technical solutions of the present application;
[0028] Figure 8 is an exploded structural schematic diagram of a quartz crystal resonator according to one of the technical solutions of the present application;
[0029] Figure 9 is a frequency stability test diagram of product 4 of embodiment 2 of the present application;
[0030] Figure 10 is a resistance stability test diagram of product 4 of embodiment 2 of the present application;
[0031] Figure 11 is a frequency stability test diagram of product 5 of embodiment 3 of the present application.
[0032] Legend: 100, reverse trapezoidal AT-type quartz high-frequency wafer; 1, wafer body; 10, vibration area; 11, outer frame; 2, electrode; 3, excitation electrode; 4, lead-out electrode; 40, lead-out part; 41, connecting part; 5, base; 50, base; 51, middle frame; 52, upper frame; 6, upper cover. DETAILED DESCRIPTION
[0033] The following will be described in detail below in combination with the accompanying Figure 1 - the accompanying Figure 11 , the present application will be further described in detail.
[0034] It should be understood that the terms such as "have", "contain" and "include" used herein do not exclude the presence or addition of one or more other elements or combinations thereof.
[0035] As Figures 1-6 shown, the utility model provides a reverse trapezoidal AT type quartz high-frequency wafer, including wafer body 1 and a pair of electrodes 2:
[0036] Regarding the wafer 1, the wafer 1 is an AT-cut quartz wafer 1, the wafer 1 is rectangular, and the four corners of the rectangle can be right-angled or chamfered according to requirements, and the specific setting is based on actual requirements. The wafer 1 comprises a vibration region 10 and an outer frame 11 integrally formed on the outer periphery of the vibration region 10. The two opposite sides of the vibration region 10 are recessed relative to the outer frame 11. That is, the two opposite sides of the wafer 1 are recessed with a groove, and the bottom surface of the pair of grooves constitutes the vibration region 10. The other regions of the wafer 1 except the vibration region 10 constitute the outer frame 11, and the outer frame 11 has a rectangular periphery, which constitutes the same periphery as the periphery of the wafer 1. In an embodiment, the thickness of the outer frame 11 is set to 70 μm, and the thickness of the vibration region 10 is related to the actual fundamental frequency.
[0037] The minimum width of the outer frame 11 in the direction away from the vibration region 10 is not less than 20 μm, which ensures the width of the outer frame 11 in the width direction and the length direction of the wafer 1, and further ensures the bearing quality of the outer frame 11, which is not easy to collapse and makes the edge of the wafer have a relatively optimal strength, supporting the frequency stability in a wide temperature range.
[0038] Regarding the pair of electrodes 2, each electrode 2 comprises an excitation electrode 3 and a lead electrode 4 connected in series. A pair of excitation electrodes 3 are arranged on the two opposite sides of the vibration region 10, and the projections of the excitation electrodes 3 in the thickness direction of the wafer 1 overlap. The area of each side of the vibration region 10 is 1.5-9 times the area of the corresponding side excitation electrode 3. The area ratio of the vibration region 10 and the excitation electrode 3 is controlled to ensure the vibration effect of the vibration region, so that the energy of the vibration region 10 can be optimally transmitted, the useless vibration is reduced, the crystal impedance (CI) is effectively reduced, the Q value is improved, the power consumption is reduced, and the frequency stability in a wide temperature range is improved.
[0039] In use, a rectangular piezoelectric vibration region 10 part is first formed, and the vibration region 10 is excited by the electrodes 2 at the required frequency. By using this technical solution, the edge margin of the outer frame 11 is limited, and the area ratio of the vibration region 10 and the corresponding excitation electrode 3 is set, so as to ensure the vibration effect of the vibration region and the energy transmission effect, reduce the useless vibration, effectively reduce the crystal impedance, thereby improve the Q value, reduce the power consumption, and have a relatively optimal frequency stability in a wide temperature range.
[0040] In another technical solution, the shape of the vibration region 10 is any one of a circle, an ellipse, a regular polygon, and a rounded rectangle. In this technical solution, the shape of the vibration region 10 can be set according to actual conditions, and the regular polygon includes a rectangle, a regular pentagon, a regular hexagon, etc. Figure 1, the round-cornered rectangle is a rectangle in the middle and is set as an arc shape at both ends along the length direction of the sheet body 1. With this scheme, the shape of the vibration region 10 can be adjusted according to actual conditions, and it is only required that the area of each side of the vibration region 10 is 1.5-9 times the area of the corresponding side excitation electrode 3, and the width of the outer periphery of the outer frame 11 in the direction away from the vibration region 10 is not less than 20 μm.
[0041] In another technical solution, the shape of the vibration region 10 is a rectangle, and the side ratio of the vibration region 10 is 1:0.75-1. In this technical solution, the side ratio is the length-width ratio, and the vibration region 10 is set as a rectangle, which can be one of a square and a rectangle. When the side ratio is 1:1, the vibration region 10 is a square, and otherwise, the vibration region 10 is a rectangle. With this scheme, the vibration region 10 is limited to a rectangle, which can expand the area of the vibration region 10 and improve the energy transmission effect of the vibration region 10 while meeting the support strength of the outer frame 11 compared with the outer periphery of the outer frame 11.
[0042] In another technical solution, the shape of the vibration region 10 is a rectangle, and the long side range of the vibration region 10 is 0.45-0.6 mm. Preferably, the long side range of the vibration region 10 is 0.50-0.6 mm. With this scheme, the small volume packaging requirement is met while the length of the vibration region 10 is limited to ensure the area of the vibration region 10 and improve the energy transmission effect of the vibration region 10.
[0043] In another technical solution, the shape of the excitation electrode 3 can be any one of a circle, an ellipse, a regular polygon, and a round-cornered rectangle. The shape of the excitation electrode 3 is adjusted according to actual conditions, the regular polygon includes a regular quadrilateral and a regular pentagon, and the round-cornered rectangle is a rectangle in the middle and is set as an arc shape at both ends along the length direction of the sheet body 1. With this scheme, the optional shape of the excitation electrode 3 is limited, and further, preferably, the shape of the excitation electrode 3 is a circle. In the case of other designs being the same, the closer the excitation electrode 3 is to the circle, the smaller the resistance value is, and the higher the Q value is. The performance parameters, such as the crystal impedance (CI) and the frequency stability in a wide temperature range, are improved compared with other shapes.
[0044] In another technical solution, each lead-out electrode 4 includes a lead-out portion 40 and a connecting portion 41, wherein:
[0045] A pair of the lead-out portions 40 respectively start from the corresponding exciting electrodes 3 and are respectively led out to one of opposite two end surfaces of the outer frame 11; in one specific embodiment, a pair of the lead-out portions 40 respectively start from the corresponding exciting electrodes 3, expand in a fan shape, extend to one of end surfaces of the outer frame 11, and then extend along the end surface towards an end surface perpendicular to the end surface, after extending to the perpendicular end surface, simultaneously form connecting portions 41 on two side surfaces of the wafer body 1 corresponding to the connecting portions 41, for forming cementation points; one pair of the connecting portions 41 are arranged at one of the opposite two end surfaces of the outer frame 11 and are respectively connected with the lead-out portions 40 of the corresponding end surface. By using this scheme, the electrode 4 is led out through the lead-out portion 40, and then the cementation point is formed by cooperating with the connecting portion 41, so that the energy transmission effect of the vibration area 10 is improved.
[0046] In another technical scheme, the distance between one end surface of the outer frame 11 with the connecting portion 41 and the vibration area 10 is at least 30 μm, and the distance between the other end surface of the outer frame 11 away from the connecting portion 41 and the vibration area 10 is 20-25 μm. By using this scheme, on the basis of ensuring that the width of the outer periphery of the outer frame 11 in the direction away from the vibration area 10 is not less than 20 μm, the end surface of the outer frame 11 away from the connecting portion 41 has a relatively small distance, thereby providing a larger space for the setting of the connecting portion 41, so that the vibration area 10 is as close as possible to one edge of the outer frame 11, and the other edge is reserved for the installation space of the corresponding connecting portion 41, and the strength and cementation stability are comprehensively considered, so that various performance parameters are improved.
[0047] In another technical scheme, the distance between the vibration area 10 and the two end surfaces of the outer frame 11 with a pair of lead-out portions 40 can be equal or not equal, which indicates that the vibration area 10 can be on the center line of the wafer body 1 or not, and can be left or right, as shown in Figure 5 . Preferably, the distance between the vibration area 10 and the two end surfaces of the outer frame 11 with a pair of lead-out portions 40 is equal. By using this scheme, on the basis of meeting the width of the outer frame 11, the vibration area 10 is preferably arranged on the center line of the wafer body 1, so that the vibration stability is improved.
[0048] As shown in Figures 7-8 , the utility model also provides a quartz crystal resonator, including base 5, above-mentioned reverse trapezoidal AT type quartz high frequency wafer 100, upper cover 6;
[0049] The base 5 comprises a base 50, an intermediate frame 51 and an upper frame 52 which are sequentially stacked to form a containing space, and the AT-shaped quartz high-frequency wafer 100 is fixed in the containing space by dispensing. The base 50 is provided with a pair of lead-out electrodes which are respectively fixed to the AT-shaped quartz high-frequency wafer 100 by dispensing and are respectively electrically connected to a pair of lead-out electrodes of the AT-shaped quartz high-frequency wafer 100 by dispensing. The pair of lead-out electrodes respectively extend to opposite corners of the base 50, and the opposite corners of the base 50 have arc-shaped notches, and the pair of lead-out electrodes are respectively led out to the bottom surface of the base 50 to form pads through the corresponding arc-shaped notches.
[0050] The intermediate frame 51 is arranged on the base 50, and the intermediate frame 51 and the base 50 cooperatively form a space for containing the AT-shaped quartz high-frequency wafer 100, and the projection of the intermediate frame 51 in the thickness direction overlaps the projection of the base 50 in the thickness direction.
[0051] Further, the upper frame 52 is fixed to the top surface of the intermediate frame 51, and the projection of the inner side wall of the upper frame 52 in the thickness direction overlaps the projection of the intermediate frame 51 in the thickness direction, which improves the assembly convenience during wafer assembly and increases the depth of the wafer containing space.
[0052] The upper cover 6 is encapsulated on the top surface of the upper frame 52.
[0053] Embodiment 1
[0054] The embodiment 1 of the present application discloses an AT-shaped quartz high-frequency wafer, which is applicable to high-frequency points above 50Mhz, preferably above 85Mhz, and further preferably 1210 package, 90-300Mhz. The AT-shaped quartz high-frequency wafer is provided as follows:
[0055] The wafer body 1 is rectangular, and the length range is 700-800μm and the width range is 550-650μm. In this embodiment, the size of the wafer body 1 is 70μm in thickness, 778μm in length and 630μm in width.
[0056] The vibration area 10 is rectangular, and the thickness range of the vibration area 10 is 4-18μm. In this embodiment, the thickness is 8.5μm, the length is 511μm and the width is 509μm. The long side of the vibration area 10 is arranged in parallel with the long side direction of the wafer body 1, and the vibration area 10 is arranged on the center line of the wafer body 1 in the width direction (parallel to the length direction of the wafer body 1), the distance between the vibration area 10 and one end of the wafer body 1 in the length direction is set to 20-25μm, and in this embodiment, it is set to 23μm, and the distance between the vibration area 10 and the other end of the wafer body 1 is set to not less than 30μm, which is used to set the connecting part 41 to be fixed by dispensing.
[0057] The base frequency of the embodiment is set to 153.6MHz, each electrode 2 includes an excitation electrode 3 and a lead-out electrode 4 connected by electricity, wherein the electrodes are respectively set as:
[0058] Oval (the area of the excitation electrode 3 of product 1 is 2.99 times the area of the vibration area 10);
[0059] Circular rectangle (the area of the excitation electrode 3 of product 2 is 2.51 times the area of the vibration area 10);
[0060] Rectangular with arc-shaped chamfer (the area of the excitation electrode 3 of product 3 is 2.25 times the area of the vibration area 10).
[0061] Embodiment 2
[0062] The embodiment 1 of the application discloses a reverse trapezoidal AT type quartz high-frequency wafer, which is applicable to high-frequency frequency points above 50Mhz, preferably above 85Mhz, and further preferably a 2520 type 90-300MHz base frequency frequency; the base frequency of the embodiment is set to 100MHz, and the reverse trapezoidal AT type quartz high-frequency wafer is set as:
[0063] The wafer body 1 is rectangular, with a length of 1500-1700μm and a width of 1000-1300μm; in the embodiment, the wafer body 1 has a thickness of 70μm, a length of 1615μm and a width of 1210μm;
[0064] The vibration area 10 is rectangular, with a thickness of 4-18μm, a length of 800-1200μm and a width of 800-1200μm; in the embodiment, the vibration area 10 has a thickness of 14.5μm, a length of 2105μm and a width of 1017μm, the long side of the vibration area 10 is parallel to the long side direction of the wafer body 1, and the vibration area 10 is arranged on the center line of the wafer body 1 in the width direction (parallel to the length direction of the wafer body 1), the distance between the vibration area 10 and one of the two ends of the wafer body 1 in the length direction is set to 20-25μm, which is 23μm in the embodiment, and the distance to the other end is set to not less than 30μm, for setting the connecting part 41 to be fixed by dispensing;
[0065] Each electrode includes an excitation electrode 3 and a lead-out electrode 4 connected by electricity, wherein the excitation electrode 3 is set as: circular, the area of the excitation electrode 3 is 3-9 times the area of the vibration area 10, product 4 is set in the embodiment, and the area of the excitation electrode 3 of product 4 is 8.96 times the area of the vibration area 10.
[0066] Embodiment 3
[0067] The embodiment 1 of the present application discloses a reverse trapezoidal AT type quartz high-frequency wafer, which is applicable to high-frequency frequency points above 50Mhz, preferably above 85Mhz, and further preferably a packaging product is a 3225 packaging model with a base frequency of 90-300MHz, and the base frequency of the embodiment is set to 156.25MHz, and the reverse trapezoidal AT type quartz high-frequency wafer is set to:
[0068] The wafer body 1 is rectangular, with a length of 1500-2100μm and a width of 1000-1500μm; in this embodiment, the size of the wafer body 1 is a thickness of 70μm, a length of 1990μm, and a width of 1240μm;
[0069] The vibration area 10 is a circular-rectangular, with a thickness of 4-18μm, in this embodiment, the thickness of the vibration area 10 is 8.5μm, the length (circular angle middle distance) of the vibration area 10 is 1430μm, and the width (rectangular area width) is 1100μm, the long side of the vibration area 10 is arranged in parallel with the long side direction of the wafer body 1, and the vibration area 10 is arranged on the center line of the wafer body 1 along the width direction (parallel to the length direction of the wafer body 1), the distance between the vibration area 10 and one of the two ends of the length direction of the wafer body 1 is set to 20-25μm, and in this embodiment, it is set to 23μm, and the distance to the other end is set to not less than 30μm, for setting the connecting part 41 to be fixed by dispensing;
[0070] Each electrode includes an excitation electrode 3 and a lead electrode 4 connected by electricity, wherein the excitation electrode 3 is set to be circular, and the diameter of the excitation electrode 3 is 300-500μm; in this embodiment, the diameter of the excitation electrode 3 of the product 5 is 400μm.
[0071] Test data
[0072] 1, package the above products 1-5, respectively test the finished crystal impedance (Ω), Q value, SPDB value, DLD, crystal impedance (CI), and the results are shown in the following table 1:
[0073] Table 1 test results of packaged products
[0074]
[0075] Among them, the piezoelectric resonance phenomenon of the wafer in the quartz crystal resonator can be simulated by an equivalent circuit. The equivalent circuit includes a resonance resistance R1 (corresponding to the crystal impedance), a dynamic inductance L1, etc.
[0076] Crystal impedance: the smaller the crystal impedance, the smaller the power consumption required for the crystal oscillator to start, and vice versa. According to the above table 1, products 1-5 all have small crystal impedance, which meets the requirements.
[0077] Q is the quality factor, the higher the Q value, the better the frequency stability of the crystal oscillator, in particular: According to the above formula, reducing the crystal impedance R1 can effectively improve the Q value, reduce power consumption, and improve the frequency stability of the crystal oscillator.
[0078] Parasitic response: In addition to the main response (required frequency), all crystal elements have other frequency responses, and the smaller the parasitic response, the better the performance of the product. The measurement of parasitic response includes SPDB (unit: dB), which represents the difference between the amplitude of the resonant frequency and the maximum parasitic amplitude. According to the above table, products 1-5 all have small parasitic responses, and the smaller the parasitic response, the better the performance of the product.
[0079] DLD2 (unit: ohm) is the difference between the maximum and minimum values of the load resonance resistance under different excitation levels. When DLD2 is small, it means that the load resonance resistance changes less under different levels, and the reliability and stability of the circuit are improved. According to the above table, products 1-5 have good circuit reliability and stability.
[0080] 2. Frequency stability test in a wide temperature range
[0081] Frequency stability is a measure of the change in the output frequency of a device that can occur due to temperature changes during operation. If the frequency drift exceeds the expectations of the application program, timing errors can occur. Frequency stability is expressed in parts per million or ppm relative to the nominal frequency within a specific temperature range.
[0082] The above products 1-5 are packaged, and the frequency stability test in a wide temperature range is performed. The test shows that the packaged products have good frequency stability in a wide temperature range. Among them:
[0083] The frequency stability test results of product 4 in a wide temperature range are shown in Figure 9 , and the frequency stability test results of product 5 in a wide temperature range are shown in Figure 11 . According to Figure 9 , Figure 11 , it can be seen that the packaged products have good wide temperature stability.
[0084] The resistance stability test results of product 4 in a wide temperature range are shown in Figure 10 , and the packaged products have good resistance stability in a wide temperature range, and other packaged products have the same effect.
[0085] The embodiments of the present specific embodiment are the preferred embodiments of the present application, and are not limited to the protection scope of the present application. The same parts are indicated by the same reference numerals. Therefore: any equivalent changes made according to the structure, shape, principle of the present application should be covered by the protection scope of the present application.
Claims
1. A quartz high frequency crystal wafer of the inverse trapezoidal AT type, characterized in that, The application relates to a reverse trapezoidal AT-type quartz high-frequency wafer (100) comprising the following parts: a wafer body (1) comprising a vibration area (10) and an outer frame (11) integrally formed on the outer periphery of the vibration area (10), wherein the outer frame (11) has a rectangular outer periphery, and the two opposite sides of the vibration area (10) are concavely arranged relative to the outer frame (11), and the minimum width of the outer frame (11) in the direction away from the vibration area (10) is not less than 20 mu m; a pair of electrodes (2), each electrode (2) comprising an excitation electrode (3) and a lead-out electrode (4) electrically connected, and the pair of excitation electrodes (3) are arranged on the two opposite sides of the vibration area (10) and the projections of the excitation electrodes (3) in the thickness direction of the wafer body (1) overlap, wherein the area of each side of the vibration area (10) is 1.5-9 times the area of the corresponding side excitation electrode (3).
2. The inverse trapezoidal AT-cut quartz high frequency wafer of claim 1, wherein The shape of the vibration area (10) is any one of a circle, an ellipse, a regular polygon or a rounded rectangle.
3. The inverse trapezoidal AT-cut quartz high frequency blank of claim 1, wherein The shape of the vibration area (10) is a rectangle, and the side ratio of the vibration area (10) is 1:0.75-1.
4. The inverse trapezoidal AT-cut quartz high frequency blank of claim 3, wherein The long side of the vibration area (10) ranges from 0.45 mm to 0.6 mm.
5. The inverse trapezoidal AT-cut quartz high frequency wafer of claim 1, wherein The shape of the excitation electrode (3) can be any one of a circle, an ellipse, a regular polygon or a rounded rectangle.
6. The inverse trapezoidal AT-cut quartz high frequency blank of claim 1, wherein Each lead-out electrode (4) comprises a lead-out part (40) and a connecting part (41), wherein: the pair of lead-out parts (40) are respectively led out from the corresponding excitation electrodes (3) and respectively led out to one of the opposite two end faces of the outer frame (11); the pair of connecting parts (41) are arranged on one of the opposite two end faces of the outer frame (11) and respectively connected with the lead-out parts (40) of the corresponding end face.
7. The inverse trapezoidal AT-cut quartz high frequency blank of claim 6, wherein The distance between the end face of the outer frame (11) with the connecting part (41) and the vibration area (10) is at least 30 mu m, and the distance between the end face of the outer frame (11) away from the connecting part (41) and the vibration area (10) is 20-25 mu m.
8. The inverse trapezoidal AT-cut quartz high frequency blank of claim 6, wherein The distance between the vibration area (10) and the two end faces of the outer frame (11) with the pair of lead-out parts (40) is equal.
9. A quartz crystal resonator, characterized by, The application also relates to a reverse trapezoidal AT-type quartz high-frequency wafer (100) comprising the following parts: a reverse trapezoidal AT-type quartz high-frequency wafer (100) according to any one of claims 1-8; a base (5) comprising a base (50), an intermediate frame (51) and an upper frame (52) sequentially stacked to form a containing space, wherein the reverse trapezoidal AT-type quartz high-frequency wafer (100) is fixed in the containing space by dispensing; an upper cover (6) encapsulating the top surface of the upper frame (52).