Wafer support and semiconductor device with same

Abstract

The utility model provides a wafer support and a semiconductor device with the same, the wafer support comprises a first support and a second support, the first support and the second support are adjacently arranged, and the height of the first support is H greater than that of the second support. A wafer is arranged on the second support, a bonding wire is connected between the wafer and the first support, and the bonding wire and the second support are arranged in a spaced mode. The first support is not provided with a wafer and belongs to a non-welding wafer support, and the second support is provided with a wafer and belongs to a welding wafer support. The first support is located above the second support, and the height difference between the first support and the second support is H, so that the first support and the second support are located in different planes. The bonding wire led out from the wafer is connected to the first support, and as the height difference exists between the first support and the second support and a certain distance exists between the bonding wire and the second support, the phenomenon of short circuit caused by the fact that the bonding wire is in contact with the first support and the second support at the same time can be prevented.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor devices, and particularly relates to a wafer support and a semiconductor device with the same. BACKGROUND

[0002] Semiconductor devices, such as triodes and diodes, which are bound by wire in the industry, are prone to abnormal gold wire binding due to production process reasons during factory production. If the gold wire binding collapses, short circuiting will occur between the two copper supports due to contact with the gold wire, thereby causing product failure.

[0003] The above problems are common in the production process of semiconductor devices, and there are the following reasons for gold wire deformation: (1) gold wire deformation caused by employee sampling, (2) gold wire deformation caused by turnover transportation, (3) gold wire deformation caused by production equipment.

[0004] Therefore, a wafer support is needed that can prevent the gold wire from simultaneously contacting the first support and the second support, thereby avoiding short circuiting. SUMMARY

[0005] To overcome the problems in the related art, one of the purposes of the present application is to provide a wafer support that can prevent the gold wire from simultaneously contacting the first support and the second support, thereby avoiding short circuiting.

[0006] A wafer support includes a first support and a second support, the first support and the second support are arranged adjacent to each other; the height of the first support is greater than the height of the second support by H; a wafer is arranged on the second support, and a gold wire is connected between the wafer and the first support, the gold wire is arranged spaced apart from the second support.

[0007] In the preferred technical solution of the present application, a first fish tail line is arranged on the first support, and a second fish tail line is arranged on the wafer; a first end of the gold wire is connected to the first fish tail line, and a second end of the gold wire is connected to the second fish tail line.

[0008] In the preferred technical solution of the present application, the height of the wafer is greater than the height of the first support.

[0009] In the preferred technical solution of the present application, the distance between the side of the wafer close to the first support and the side of the second support close to the first support is K.

[0010] In the preferred technical solution of the present application, a first pin is connected to the side of the first support away from the second support, and a second pin is connected to the side of the second support away from the first support.

[0011] In the preferable technical solution of the present application, the wafer support further comprises a packaging layer, and the first support, the second support, the wafer and the wire are arranged in the packaging layer.

[0012] In the preferable technical solution of the present application, the first support and the second support are arranged in different planes.

[0013] In the preferable technical solution of the present application, the diameter of the wire is D

[0014] In the preferable technical solution of the present application, the height difference H between the first support and the second support is greater than or equal to 2D

[0015] The present application has the following advantages: the present application provides a wafer support, which comprises a first support and a second support, the first support and the second support are arranged adjacently, the height of the first support is greater than that of the second support by H, a wafer is arranged on the second support, a wire is connected between the wafer and the first support, and the wire is arranged apart from the second support. The first support is a non-welding wafer support without a wafer, and the second support is a welding wafer support with a wafer. The first support is arranged above the second support, and the height difference between the first support and the second support is H, so that the first support and the second support are arranged in different planes. The wire connected from the wafer is connected to the first support, and because of the height difference between the first support and the second support, the wire is arranged apart from the second support, which can prevent the wire from contacting the first support and the second support at the same time and causing a short circuit. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 is a schematic view of the first wafer support of the present application;

[0017] Figure 2 is a schematic view of the semiconductor device with the first wafer support of the present application;

[0018] Figure 3 is a schematic view of the second wafer support of the present application;

[0019] Figure 4 is a schematic view of the second wafer support with parameters of the present application;

[0020] Figure 5 is a schematic view of the wafer support of the prior art;

[0021] Figure 6 is a schematic view of the semiconductor device of the prior art;

[0022] Figure 7is a schematic diagram of a prior art die carrier with parameters.

[0023] Reference numerals: 1, first carrier; 2, second carrier; 3, die; 4, wire; 5, first fish tail; 6, second fish tail; 7, first pin; 8, second pin; 9, packaging layer. DETAILED DESCRIPTION

[0024] The preferred embodiments of the present application will be described in more detail by referring to the attached drawings. Although the preferred embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that the present application is more thoroughly and completely conveyed to those skilled in the art, and the scope of the present application is fully conveyed to those skilled in the art.

[0025] Example 1

[0026] As Figure 1 shown, the present embodiment provides a die carrier, which includes a first carrier 1 and a second carrier 2, the first carrier 1 and the second carrier 2 are arranged adjacent to each other; the height of the first carrier 1 is greater than the height of the second carrier 2 by H; the second carrier 2 is provided with a die 3, and the die 3 is connected with the first carrier 1 through a wire 4, and the wire 4 is arranged spaced apart from the second carrier 2.

[0027] The welding point between the die 3 and the wire 4 of the second carrier 2 is a first welding point, the height of the surface of the die 3 is greater than the height of the upper surface of the first carrier 1, and the height of the first carrier 1 is greater than the height of the second carrier 2. The shapes of the first carrier 1, the second carrier 2 and the die 3 are all square, and the first carrier 1, the second carrier 2 and the third carrier all belong to the components of semiconductor devices, and the semiconductor devices include diodes, triodes and chips.

[0028] The wire 4 has a certain degree of curvature, and the present embodiment takes the wire 4 bending downward as an example. There is a certain distance between the wire 4 and the second carrier 2 to prevent the wire 4 from directly contacting the second carrier 2, and the wire 4 contacts the first carrier 1. In the case that the wire 4 is connected with the first carrier 1 and the second carrier 2 at the same time, the short circuit phenomenon is avoided.

[0029] The height difference between the first carrier 1 and the second carrier 2 is H, so that the first carrier 1 and the second carrier 2 are located in different planes, the wire 4 can be lifted from one end of the first carrier 1, so that the wire 4 is away from the second carrier 2 as a whole, and the wire 4 is prevented from contacting the second carrier 2.

[0030] This embodiment provides a wafer holder, including a first holder 1 and a second holder 2, wherein the first holder 1 and the second holder 2 are arranged adjacent to each other; the height of the first holder 1 is greater than the height of the second holder 2 by H; a wafer 3 is arranged on the second holder 2, and a welding wire 4 is connected between the wafer 3 and the first holder 1, and the welding wire 4 is spaced apart from the second holder 2. The first holder 1 has no wafer 3 and is a non-welded wafer 3 holder, while the second holder 2 has a wafer 3 and is a welded wafer 3 holder. The first holder 1 is located above the second holder 2, and the height difference between the first holder 1 and the second holder 2 is H, so that the first holder 1 and the second holder 2 are located in different planes. The welding wire 4 extending from the wafer 3 is connected to the first holder 1. Due to the height difference between the first holder 1 and the second holder 2, there is a certain distance between the welding wire 4 and the second holder 2, which can prevent the welding wire 4 from contacting the first holder 1 and the second holder 2 at the same time, causing a short circuit.

[0031] Example 2

[0032] like Figure 1 As shown, this embodiment provides a wafer bracket, including a first bracket 1 and a second bracket 2, the first bracket 1 and the second bracket 2 are arranged adjacent to each other; the height of the first bracket 1 is greater than the height of the second bracket 2 by H; a wafer 3 is arranged on the second bracket 2, and a welding wire 4 is connected between the wafer 3 and the first bracket 1, and the welding wire 4 is spaced apart from the second bracket 2.

[0033] like Figure 2 As shown, a first fishtail wire 5 is provided on the first bracket 1 , and a second fishtail wire 6 is provided on the wafer 3 ; a first end of the bonding wire 4 is connected to the first fishtail wire 5 , and a second end of the bonding wire 4 is connected to the second fishtail wire 6 .

[0034] The first fishtail wire 5 serves to reinforce the solder joint of the solder wire 4 on the first bracket 1, and the second fishtail wire 6 serves to reinforce the solder joint of the solder wire 4 on the wafer 3. Preferably, gold balls are added to both the first fishtail wire 5 and the second fishtail wire 6 to prevent the solder wire 4 from being subjected to stress during production, which could lead to unstable soldering.

[0035] The height of the upper surface of the wafer 3 is greater than that of the upper surface of the first bracket 1, and the height of the upper surface of the first bracket 1 is greater than that of the upper surface of the second bracket 2. This ensures that the bonding wire 4 extending from the wafer 3 droops downward, reducing the tension on the bonding wire 4. The bonding wire 4 is generally arc-shaped, and its length is greater than the straight-line distance from the first bonding point on the wafer 3 to the second bonding point on the first bracket 1. This reduces the tension on the bonding wire 4 and further reduces the tension on the bonding wire 4.

[0036] The first fish tail 5 is arranged on the first support 1, and the second fish tail 6 is arranged on the crystal element 3. The first end of the welding line 4 is connected with the first fish tail 5, and the second end of the welding line 4 is connected with the second fish tail 6. The height of the upper surface of the crystal element 3 is greater than the height of the upper surface of the first support 1, and the height of the upper surface of the first support 1 is greater than the height of the upper surface of the second support 2, so as to ensure that the welding line 4 drawn from the crystal element 3 is drooping, and the tension of the welding line 4 is reduced. The height of the crystal element 3 is greater than the height of the first support 1, the welding line 4 is in an arc shape as a whole, and the length of the welding line 4 is greater than the straight-line distance from the first welding point on the crystal element 3 to the second welding point on the first support 1, so as to reduce the tension of the welding line 4 and further reduce the tension of the welding line 4.

[0037] Embodiment 3

[0038] The embodiment provides a crystal element support, which comprises a first support 1 and a second support 2. The first support 1 and the second support 2 are arranged adjacently. The height of the first support 1 is greater than the height of the second support 2 by H. A crystal element 3 is arranged on the second support 2. A welding line 4 is connected between the crystal element 3 and the first support 1. The welding line 4 is arranged separately from the second support 2.

[0039] As shown in Figure 3 , the distance between the side of the crystal element 3 close to the first support 1 and the side of the second support 2 close to the first support 1 is K.

[0040] The side of the crystal element 3 close to the second support 2 is opposite to the first support 1, and a certain amount of allowance is left between the crystal element 3 and the edge of the second support 2. The section of the welding line 4 close to the second support 2 is drooping. The length of the allowance left on the side of the second support 2 close to the first support 1 is K, which can prevent the drooping welding line 4 from contacting the second support 2 and avoid short circuit caused by the connection of the first support 1 and the second support 2. The value of K is less than 2 mm, for example, K is set to 1 mm.

[0041] As shown in Figure 2 , the crystal element support further comprises a packaging layer 9. The first support 1, the second support 2, the crystal element 3 and the welding line 4 are arranged in the packaging layer 9. The first support 1, that is, the non-welding crystal element 3 support, and the second support 2, that is, the welding crystal element 3 support, are both designed in a gradient, which avoids the short circuit failure of semiconductor devices such as diodes, triodes and chips after being electrified, and prevents the gold wire from collapsing in the application process of the semiconductor devices.

[0042] The first support 1 and the second support 2 are located in different planes, which can prevent the horizontal section of the welding line 4 from drooping on the first support 1 and the second support 2, and avoid the short circuit caused by the direct connection of the conductors on the surfaces of the first support 1 and the second support 2 through the welding line 4.

[0043] The wafer 3 support of the embodiment further comprises a packaging layer 9, the first support 1, the second support 2, the wafer 3 and the wire 4 are arranged in the packaging layer 9, and the first support 1 and the second support 2 are arranged in different planes. The wafer 3 is arranged opposite to the first support 1 near the second support 2, and the wafer 3 and the second support 2 have a certain margin. The sagging wire 4 is arranged near the second support 2, and the wire 4 has a length K reserved on the side of the second support 2 near the first support 1, so as to prevent the sagging wire 4 from contacting the second support 2 and avoid short circuit caused by the connection of the first support 1 and the second support 2.

[0044] Embodiment 4

[0045] As shown in Figure 1 The wafer support of the embodiment comprises a first support 1 and a second support 2, the first support 1 and the second support 2 are arranged adjacent to each other; the height of the first support 1 is greater than the height of the second support 2 by H; the wafer 3 is arranged on the second support 2, the wire 4 is connected between the wafer 3 and the first support 1, and the wire 4 is arranged spaced apart from the second support 2.

[0046] The diameter of the wire 4 is D, and the height difference H between the first support 1 and the second support 2 is greater than or equal to 2D.

[0047] The height difference between the first support 1 without the wafer 3 and the second support 2 with the wafer 3 is H, and H is greater than or equal to 2D, so as to prevent the wire 4 from contacting the second support 2 after sagging and causing the first support 1 and the second support 2 welded with the wire 4 to be directly conductive. As an example, the diameter of the wire 4 is 1 mm, and the height difference between the first support 1 and the second support 2 is 2 mm or 3 mm.

[0048] The wire 4 is made of gold wire or copper wire, the wafer is welded with the wire 4 to form a first welding point, and the wire 4 is welded with the first support 1 to form a second welding point.

[0049] The diameter of the wire 4 of the embodiment is D, and the height difference H between the first support 1 and the second support 2 is greater than or equal to 2D, so as to prevent the wire 4 from contacting the second support 2 after sagging and causing the first support 1 and the second support 2 welded with the wire 4 to be directly conductive.

[0050] Embodiment 5

[0051] The embodiment provides a wafer support, which comprises a first support 1 and a second support 2, the first support 1 and the second support 2 are arranged adjacently, the height of the first support 1 is greater than the height of the second support 2 by H, the second support 2 is provided with a wafer 3, the wafer 3 is connected with the first support 1 through a welding wire 4, and the welding wire 4 is arranged at intervals from the second support 2.

[0052] As shown in Figures 3-4 , the overall width of the second support 2 is reduced, that is, the distance between the first end of the second support 2 close to the first support 1 and the second end of the second support 2 away from the first support 1 is reduced, the distance between the wafer 3 and the end of the second support 2 close to the first support 1 is K, K is less than 2 mm, for example, K is set to 1 mm. The welding wire 4 will sag after being drawn out from the wafer 3, reducing the overall width of the second support 2 can reduce the sagging height of the part of the welding wire 4 corresponding to the second support 2, so as to avoid the welding wire 4 directly contacting the second support 2, which causes the first support 1 and the second support 2 to be short-circuited.

[0053] As shown in Figure 5 , the height of the first support 1 and the second support 2 is the same, that is, the first support 1 and the second support 2 are located in the same horizontal plane. In the case that the width of the second support 2 is large, the welding wire 4 drawn out from the wafer 3 will sag while extending towards the first support 1, which may cause the welding wire 4 to contact the second support 2. The first support 1 and the second support 2 are conductive, in the case that the welding wire 4 contacts the second support 2, the first support 1 and the second support 2 are short-circuited, thereby causing a short circuit phenomenon. Figure 7 In the figure, T represents the wafer height, N represents the wire arc height, M represents the distance between the wafer 3 and the welding wire 4, Z represents the distance between the second support 2 and the welding wire 4, and D represents the wire diameter of the welding wire 4.

[0054] As shown in Figure 2 , the embodiment further provides a semiconductor device, which comprises the wafer support described in any one of the embodiments 1-4. The semiconductor device is a diode, a triode or a chip, the wafer support supports the wafer, after the wafer support is arranged, the wafer support is encapsulated by using resin to form an encapsulation layer 9. The side, away from the second support 2, of the first support 1 is connected with a first pin 7, and the side, away from the first support 1, of the second support 2 is connected with a second pin 8. The first pin 7 and the second pin 8 are connected to both ends of the plastic encapsulation device, thereby connecting the semiconductor device to a circuit. Figure 6 is a schematic view of a semiconductor device of the prior art, Figure 6The distance between the second support 2 and the first support 1 is small, and the height of the first support 1 and the second support 2 is the same, which easily causes the solder wire 4 to sag on the second support 2, resulting in a short circuit phenomenon.

[0055] In this embodiment, the overall width of the second support 2 is reduced, that is, the distance between the first end of the second support 2 close to the first support 1 and the second end of the second support 2 away from the first support 1 is reduced, and the distance between the crystal element 3 and the first end of the second support 2 close to the first support 1 is K, which is less than 2 mm. After the solder wire 4 is drawn out from the crystal element 3, it will sag. Reducing the overall width of the second support 2 can reduce the sagging height of the part of the solder wire 4 corresponding to the second support 2, so as to avoid the solder wire 4 directly contacting the second support 2, resulting in a short circuit phenomenon caused by the conduction of the first support 1 and the second support 2.

[0056] Unless specifically stated otherwise, the relative arrangements of the components and steps, numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the application. In all examples shown and discussed herein, any specific value should be interpreted as merely an example, and not as a limitation. Thus, other examples of the example embodiments can have different values. It should be noted that like numbers and letters refer to like items throughout the several figures, and no further discussion on the same will be provided.

[0057] It should be understood that spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the figures. For example, if a device in the figures is inverted, then a dependent portion that was described as above other portions or above another portion would then be oriented below other portions or below the other portion, respectively. Thus, the exemplary term "above" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. It should also be understood that the terms "first", "second", etc. are used herein only to distinguish one element from another, and do not necessarily have an ordinal meaning.

[0058] In addition, it should be noted that the use of "first", "second", and the like words of similar meaning used in the description are only used to distinguish between similar elements, and do not have special meanings unless otherwise stated. Therefore, these words cannot be understood as limiting the scope of protection of the present application.

[0059] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A wafer support, characterized in that: The first support and the second support are arranged adjacently; the height of the first support is greater than the height of the second support by H; a crystal element is arranged on the second support; a bonding wire is connected between the crystal element and the first support; and the bonding wire is arranged apart from the second support.

2. The wafer carrier of claim 1, wherein, A first fish tail is arranged on the first support, and a second fish tail is arranged on the crystal element; a first end of the bonding wire is connected with the first fish tail, and a second end of the bonding wire is connected with the second fish tail.

3. The wafer support of claim 1, wherein The height of the crystal element is greater than the height of the first support.

4. The wafer support of claim 1, wherein, The distance between the side of the crystal element close to the first support and the side of the second support close to the first support is K.

5. The wafer support of claim 1, wherein, A first pin is connected to the side of the first support away from the second support, and a second pin is connected to the side of the second support away from the first support.

6. The wafer support of claim 1, wherein, A packaging layer is further included, and the first support, the second support, the crystal element and the bonding wire are arranged in the packaging layer.

7. The wafer support of claim 1, wherein The first support and the second support are located in different planes.

8. The wafer support of claim 1, wherein, The diameter of the bonding wire is D.

9. The wafer support of claim 8, wherein, The height difference H between the first support and the second support is greater than or equal to 2D.

10. A semiconductor device, characterized by comprising: The crystal element support includes the crystal element support of any one of claims 1-9.

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