Micro light-emitting element array substrate

Abstract

The utility model relates to a micro light-emitting element array substrate. The micro light-emitting element array substrate comprises a substrate body, a plurality of micro light-emitting diode chips used for emitting light, a first Bragg reflector and a brightness enhancement film layer, the micro light-emitting diode chips are arranged on the substrate body in an array mode, and the first Bragg reflector is arranged on the bottom side face, facing the substrate body, of the micro light-emitting diode chips. The micro light-emitting diode chip further comprises a top side face deviating from the substrate body, and the brightness enhancement film layer is arranged on the top side face. According to the micro light-emitting element array substrate, the intensity of reflected light is greatly enhanced through constructive interference reflection of light rays by the first Bragg reflector, and the light-emitting brightness of the micro light-emitting element array substrate is further improved in combination with the arrangement of the brightness enhancement film layer.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a micro-light-emitting element array substrate. Background Technology

[0002] MIP (Mini / Micro LED in Package) packaging technology is a new type of LED packaging method. It packages tiny LED chips at the chip level, cuts them into single devices or multi-in-one devices, splits and mixes the light, and finally performs surface mount technology to complete the production of LED displays.

[0003] However, LED display devices using MIP packaging technology suffer from low luminous brightness. Utility Model Content

[0004] Based on this, a micro-light-emitting element array substrate is provided, which has better light utilization and higher luminous brightness.

[0005] A micro-light-emitting element array substrate, the micro-light-emitting element array substrate comprising:

[0006] substrate body;

[0007] Multiple micro-light-emitting diode chips for emitting light are arranged in an array on the substrate body; the micro-light-emitting diode chips include a bottom side facing the substrate body and a top side facing away from the substrate body.

[0008] A first Bragg reflector, wherein the first Bragg reflector is disposed at least on the bottom side surface of the micro-light-emitting diode chip; and

[0009] A brightness enhancement film is disposed on the top side of the micro LED chip.

[0010] In one embodiment, the micro LED chip further includes a peripheral side surface located between the bottom side surface and the top side surface, a portion of the first Bragg reflector is disposed on the bottom side surface, and another portion of the first Bragg reflector is disposed on the peripheral side surface.

[0011] In one embodiment, the micro-light-emitting element array substrate further includes an encapsulation layer disposed on the side of the brightness enhancement film layer opposite to the top side.

[0012] The refractive index n of the brightness enhancement film layer satisfies:

[0013] ;

[0014] in, The refractive index of the micro LED chip is [value missing]. is the refractive index of the encapsulation layer.

[0015] In one embodiment, the thickness x of the brightness enhancement film layer along the direction from the substrate body to the micro-light-emitting diode chip satisfies:

[0016] ;

[0017] Where L is the wavelength of the light emitted by the micro LED chip, and k is an integer.

[0018] In one embodiment, the first Bragg reflector includes multiple sub-film layers, the multiple sub-film layers including at least two first sub-film layers and at least two second sub-film layers, the first sub-film layers and the second sub-film layers being alternately arranged along the direction from the center of the micro light-emitting diode chip to the periphery;

[0019] The refractive index of the first sub-film layer is less than that of the second sub-film layer, and the light rays are subjected to constructive interference reflection after being incident on the multilayer sub-film layers.

[0020] In one embodiment, the thickness d of the sub-film layer along the direction from the center to the periphery of the micro-LED chip satisfies:

[0021] ;

[0022] Wherein, λ is the wavelength of the light that needs to be reflected by the sub-film layer. is the refractive index of the sub-film layer.

[0023] In one embodiment, the first sub-film layer is made of titanium dioxide, and the second sub-film layer is made of silicon dioxide; or

[0024] The first sub-film layer is made of titanium dioxide, and the second sub-film layer is made of aluminum oxide; or

[0025] The first sub-film layer is made of silicon dioxide, and the second sub-film layer is made of silicon nitride; or

[0026] The first sub-film layer is made of aluminum nitride, and the second sub-film layer is made of gallium nitride; or

[0027] The first sub-film layer is made of hafnium dioxide, and the second sub-film layer is made of aluminum oxide.

[0028] In one embodiment, the substrate body includes a plurality of receiving slots, each of which corresponds to a plurality of micro light-emitting diode chips. The receiving slots are used to accommodate the corresponding micro light-emitting diode chips, and a second Bragg reflector is provided on the inner sidewall of the receiving slot.

[0029] In one embodiment, a first anti-penetration layer is provided between the inner wall of the receiving groove and the second Bragg reflector.

[0030] In one embodiment, the micro-light-emitting element array substrate further includes an encapsulation layer, which is disposed on the light-emitting side of the micro-light-emitting diode chip and between the substrate body and the micro-light-emitting diode chip, for encapsulating the micro-light-emitting diode chip in the receiving groove;

[0031] The encapsulation layer includes a bottom wall facing the substrate body, a top wall away from the substrate body, and a peripheral wall disposed on the bottom wall and the top wall, wherein a second anti-penetration layer is provided on the peripheral wall.

[0032] The aforementioned micro-light-emitting element array substrate utilizes a first Bragg reflector on the bottom side of the micro-light-emitting diode chip facing the substrate body. The first Bragg reflector performs constructive interference reflection on the light emitted from the micro-light-emitting diode chip towards the substrate body. The reflected light passes through the micro-light-emitting diode chip and continues to emerge from the top side of the micro-light-emitting diode chip. This constructive interference reflection of the light by the first Bragg reflector greatly enhances the intensity of the reflected light. Combined with the brightening film layer on the top side, the luminous brightness of the micro-light-emitting element array substrate can be further improved. Attached Figure Description

[0033] Figure 1 This is a top view of a plurality of micro light-emitting diode chips disposed on a substrate body in one embodiment of this application.

[0034] Figure 2 for Figure 1 A side view of the micro LED chip in the illustrated embodiment.

[0035] Figure 3 for Figure 1 The illustrated embodiment shows a side view of the micro-LED chip disposed on the substrate body.

[0036] Explanation of reference numerals in the attached figures:

[0037] 10. Micro-light-emitting element array substrate;

[0038] 100, substrate body; 110, receiving groove; 120, second Bragg reflector; 130, first anti-penetration layer;

[0039] 200, Micro LED chip; 210, First semiconductor layer; 220, Active layer; 230, Second semiconductor layer; 240, First electrode; 250, Second electrode;

[0040] 300. First Bragg reflector;

[0041] 400. Brightening film layer;

[0042] 500, Encapsulation layer; 510, Second anti-penetration layer. Detailed Implementation

[0043] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0044] In the description of this application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing this application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0045] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include at least one of such features. In the description of this application, if the term "plurality" appears, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0046] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0047] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0048] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0049] The concept of MIP (Mini / Micro LED in Package) packaging technology embodies the idea of ​​"breaking down the whole into parts". Its advantages are smaller chips, lower losses, and higher display consistency. It has the potential to reduce costs and significantly increase production volume, thereby improving the performance and efficiency of LED display devices.

[0050] However, because it uses small chip packaging, LED display devices using MIP packaging technology generally suffer from low light utilization and low luminous brightness.

[0051] This application provides a micro-light-emitting element array substrate that, while employing MIP packaging technology, has better light utilization and luminous brightness.

[0052] See Figure 1 and Figure 2 As shown, Figure 1 This is a top view of a plurality of micro light-emitting diode chips disposed on a substrate body in one embodiment of this application. Figure 2 for Figure 1 A side view of the micro LED chip in the illustrated embodiment.

[0053] The micro-light-emitting element array substrate 10 provided in this application includes a substrate body 100, a plurality of micro-light-emitting diode chips 200 for emitting light, a first Bragg reflector 300, and a brightness enhancement film layer 400. The plurality of micro-light-emitting diode chips 200 are arrayed on the substrate body 100. The micro-light-emitting diode chips 200 are used to emit blue light, red light, or green light, and the arrangement of the plurality of micro-light-emitting diode chips 200 on the substrate body 100 can be specifically configured according to requirements, which will not be elaborated here.

[0054] The first Bragg reflector 300 is disposed on the bottom side of the micro-LED chip 200 facing the substrate body 100. The first Bragg reflector 300 performs constructive interference reflection on the light emitted by the micro-LED chip 200 towards the substrate body 100. The reflected light passes through the micro-LED chip 200 and continues to be emitted from the light-emitting side of the micro-LED chip 200 away from the substrate body 100. Thus, the intensity of the reflected light can be greatly enhanced by the constructive interference reflection of the light by the first Bragg reflector 300, thereby improving the luminous brightness of the micro-light-emitting element array substrate 10.

[0055] The micro-LED chip 200 also includes a top side facing away from the substrate body 100, and a brightness enhancement film layer 400 is disposed on the top side side. Part of the light emitted by the micro-LED chip 200 is emitted directly from the top side side, and part is reflected by the first Bragg reflector 300 and emitted from the top side side. The light emitted from the top side side is further brightened after passing through the brightness enhancement film layer 400, thereby further improving the luminous brightness of the micro-LED array substrate 10.

[0056] The micro-light-emitting element array substrate 10 of this application provides a first Bragg reflector 300 on the bottom side of the micro-light-emitting diode chip 200 facing the substrate body 100. The first Bragg reflector 300 performs constructive interference reflection on the light emitted by the micro-light-emitting diode chip 200 towards the substrate body 100. The reflected light passes through the micro-light-emitting diode chip 200 and continues to emit light from the top side of the micro-light-emitting diode chip 200. In this way, the intensity of the reflected light can be greatly enhanced by the constructive interference reflection of the light by the first Bragg reflector 300. Combined with the provision of a brightness enhancement film layer 400 on the top side, the luminous brightness of the micro-light-emitting element array substrate 10 can be further improved.

[0057] In some embodiments, continue reading Figure 2As shown, the micro-LED chip 200 also includes a peripheral side surface located between the bottom side surface and the top side surface, and a portion of the first Bragg reflector 300 is disposed on the peripheral side surface. It can be understood that the first Bragg reflector 300 is disposed on the bottom side surface, and a portion of the first Bragg reflector 300 can be positioned on the peripheral side surface. This allows for constructive interference reflection of light emitted from the micro-LED chip 200 toward the peripheral side surface, further increasing the intensity of the reflected light and improving the luminous brightness of the micro-LED array substrate 10.

[0058] Furthermore, the multiple reflections of light within the first Bragg reflector 300 allow the light emitted from the micro-LED chip 200 to be gathered and collected in other directions, such as towards the bottom and peripheral sides, increasing their intensity before emitting light from the same emitting side, such as the top side. This improves light utilization and significantly enhances the brightness of the micro-LED array substrate 10. Simultaneously, the partial location of the first Bragg reflector 300 on the peripheral side helps reduce crosstalk between adjacent micro-LED chips 200, further improving the display quality of the micro-LED array substrate 10.

[0059] A brightness enhancement film layer 400 and an encapsulation layer 500 are sequentially provided on the top side surface of the micro-LED chip 200 and along the direction from the substrate body 100 toward the micro-LED chip 200. The refractive index n of the brightness enhancement film layer 400 satisfies:

[0060] ...Formula 1;

[0061] in, The refractive index of the micro LED chip 200 The refractive index of the encapsulation layer 500 is thus achieved, enabling the brightening effect of the brightness enhancement film layer 400 to increase the brightness of light passing through it.

[0062] In some embodiments, the material of the brightness enhancement film 400 can be one of the materials listed in the table below. For example, assuming the material of the micro-LED chip 200 is gallium nitride (GaN), the corresponding refractive index... The refractive index is 2.45. Assuming the encapsulation layer 500 is made of epoxy material, the corresponding refractive index is... Given a value of 1.55, according to Formula 1 above, the refractive index n of the brightness enhancement film 400 is approximately 1.94. Referring to the table below, hafnium oxide can be selected as the material for the brightness enhancement film 400. Alternatively, a blend of multiple coating materials can be used to test and determine the optimal coating ratio.

[0063]

[0064] In some embodiments, the thickness x of the brightness enhancement film layer 400 along the direction from the substrate body 100 to the micro light-emitting diode chip 200 satisfies:

[0065] ;

[0066] Where L is the wavelength of the light emitted by the micro LED chip 200, and k is an integer.

[0067] Thus, by setting the thickness and refractive index of the brightness enhancement film layer 400, it can enhance the brightness of the passing light, thereby further improving the luminous brightness of the micro-light-emitting element array substrate 10 of this application.

[0068] In some embodiments, the first Bragg reflector 300 includes multiple sub-film layers, which include at least two first sub-film layers and at least two second sub-film layers alternately arranged along the direction from the center of the micro-light-emitting diode chip 200 to the periphery. The refractive index of the first sub-film layer is less than that of the second sub-film layer, and constructive interference reflection occurs after light is incident on the multiple sub-film layers.

[0069] Alternatively, the multilayer sub-film includes at least two first sub-film layers and at least two second sub-film layers, with the first and second sub-film layers alternating to form an alternating sub-film layer structure with varying refractive index. By setting the refractive index and thickness of the sub-film layers, constructive interference reflection occurs after light is incident on the first Bragg reflector 300, thereby increasing the intensity of the reflected light.

[0070] It is understandable that when light waves are reflected between interfaces of media with different refractive indices, the reflection phase of the light waves will be different at each interface due to the difference in refractive index. If the thickness of the media layer is carefully designed, then the light waves reflected from adjacent interfaces can interfere with each other at a specific wavelength, forming Bragg reflection and producing constructive interference, thereby enhancing the intensity of the reflected light.

[0071] In some embodiments, the thickness d of the sub-film layer pointing from the center to the periphery of the micro-LED chip 200 satisfies:

[0072] ...Formula 2;

[0073] Where λ is the wavelength of the light that needs to be reflected by the sub-film layer. The refractive index of the sub-film layer is given. The thickness of the sub-film layer is related to the wavelength of the light to be reflected and its refractive index. Since the micro-LED chip 200 can emit blue, red, or green light, different micro-LED chips 200 emit light with different wavelengths. Therefore, Formula 2 above must be satisfied. By limiting the thickness and refractive index of the sub-film layer, and adjusting the thickness and refractive index according to Formula 2, different thicknesses can be achieved. This allows the use of materials with different refractive indices to realize constructive interference reflection of light of different wavelengths.

[0074] In some embodiments, the material of the first sub-film layer and its combination can be that the first sub-film layer is made of titanium dioxide and the second sub-film layer is made of silicon dioxide. Alternatively, the first sub-film layer can be made of titanium dioxide and the second sub-film layer of aluminum oxide. Another option is that the first sub-film layer is made of silicon dioxide and the second sub-film layer of silicon nitride. Yet another option is that the first sub-film layer is made of aluminum nitride and the second sub-film layer of gallium nitride. A third option is that the first sub-film layer is made of hafnium dioxide and the second sub-film layer of aluminum oxide. These various combinations can be used to design the refractive index of the sub-film layer. By adjusting the thickness of the sub-film layer according to Formula 2 above, constructive interference reflection of light can be achieved. However, the methods are not limited to the above material combinations and will not be elaborated further here.

[0075] In some embodiments, see Figure 3 As shown, Figure 3 for Figure 1 The illustrated embodiment shows a side view of the micro-LED chip disposed on the substrate body.

[0076] The substrate body 100 includes multiple receiving slots 110, each corresponding to a multiple micro-light-emitting diode (LED) chips 200. Each receiving slot 110 is used to house the micro-light-emitting diode chips 200, and a second Bragg reflector 120 is provided on the inner sidewall of the receiving slot 110. Thus, the second Bragg reflector 120 on the inner sidewall of the receiving slot 110 can reflect side-colored light and further reflect other leaked light, thereby improving light utilization and increasing the luminous brightness of the micro-light-emitting element array substrate 10. The structural principle of the second Bragg reflector 120 is the same as that of the first Bragg reflector 300, and will not be described again here.

[0077] It is understood that by setting up the first Bragg reflector 300 and the second Bragg reflector 120, this application can enhance the light intensity without the problem of light absorption by metal, and has a reflection effect superior to that of metal.

[0078] In some embodiments, as Figure 2As shown, the micro LED chip 200 of this application includes a first semiconductor layer 210, an active layer 220, and a second semiconductor layer 230 stacked together. It also includes a first electrode 240 electrically connected to the first semiconductor layer 210 and a second electrode 250 electrically connected to the second semiconductor layer 230. The first semiconductor layer 210, active layer 220, second semiconductor layer 230, first electrode 240, and second electrode 250 of the micro LED chip 200 are all encapsulated within a receiving groove 110.

[0079] In some embodiments, in conjunction with reference Figure 2 and Figure 3 As shown, along the thickness direction perpendicular to the first semiconductor layer 210, a portion of the first semiconductor layer 210 extends beyond the active layer 220 and the second semiconductor layer 230. Specifically, the first semiconductor layer 210 includes a body portion stacked with the active layer 220 and the second semiconductor layer 230, and an extension portion extending beyond the body portion. Alternatively, along the thickness direction of the first semiconductor layer 210, the projected area of ​​the first semiconductor layer 210 is larger than the projected area of ​​the active layer 220 and the second semiconductor layer 230, thus facilitating the electrical connection between the first electrode 240 and the first semiconductor layer 210.

[0080] Furthermore, it can be understood that the bottom side of the micro-LED chip of this application includes a first bottom surface of the second semiconductor layer 230 facing the substrate body 100, and a second bottom surface of the extension of the first semiconductor layer 210 facing the substrate body 100. The top side of the micro-LED chip includes a top surface of the first semiconductor layer 210 facing away from the substrate body 100. The peripheral side of the micro-LED chip includes a first side surface connecting the aforementioned top surface and the first bottom surface, a second side surface connecting the first bottom surface and the second bottom surface, and a third side surface connecting the top surface and the second bottom surface.

[0081] In some embodiments, a first anti-penetration layer 130 is provided between the inner sidewall of the receiving groove 110 and the second Bragg reflector 120. The first anti-penetration layer 130 can be an ink layer, which can reduce cross-lighting between adjacent micro light-emitting diode chips 200 and improve the light pattern.

[0082] In some embodiments, the micro-light-emitting element array substrate 10 further includes an encapsulation layer 500. The encapsulation layer 500 is disposed on the light-emitting side of the micro-light-emitting diode chip 200 and between the substrate body 100 and the micro-light-emitting diode chip 200, for encapsulating the micro-light-emitting diode chip 200 within the receiving groove 110. The encapsulation layer 500 includes a bottom wall facing the substrate body 100, a top wall facing away from the substrate body 100, and a peripheral wall disposed on the bottom wall and the top wall. A second anti-penetration layer 510 is disposed on the peripheral wall. The second anti-penetration layer 510 can be an ink layer. By providing an ink layer around the encapsulation layer 500, cross-lighting between adjacent micro-light-emitting diode chips 200 can be reduced, which is beneficial to improving the light pattern.

[0083] The micro-light-emitting element array substrate 10 has a first Bragg reflector 300 disposed on the bottom side of the micro-light-emitting diode chip 200 facing the substrate body 100, and a second Bragg reflector 120 disposed on the inner sidewall of the receiving groove 110 of the substrate body 100. Utilizing the Bragg reflection principle, the light emitted from the micro-light-emitting diode chip 200 towards the substrate body 100 undergoes constructive interference reflection. The reflected light passes through the micro-light-emitting diode chip 200 and continues to exit from the top side of the micro-light-emitting diode chip 200. This constructive interference reflection of light through the Bragg reflection principle greatly enhances the intensity of the reflected light. Combined with the brightening film layer 400 disposed on the top side, the luminous brightness of the micro-light-emitting element array substrate 10 can be further improved.

[0084] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0085] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A substrate for a micro-light-emitting element array, characterized in that, The micro-light-emitting element array substrate includes: substrate body; Multiple micro-light-emitting diode chips for emitting light are arranged in an array on the substrate body; the micro-light-emitting diode chips include a bottom side facing the substrate body and a top side facing away from the substrate body. A first Bragg reflector, wherein the first Bragg reflector is disposed at least on the bottom side surface of the micro-LED chip; and A brightness enhancement film is disposed on the top side of the micro LED chip.

2. The micro-light-emitting element array substrate according to claim 1, characterized in that, The micro LED chip also includes a peripheral side surface located between the bottom side surface and the top side surface, a portion of the first Bragg reflector is disposed on the bottom side surface, and another portion of the first Bragg reflector is disposed on the peripheral side surface.

3. The micro-light-emitting element array substrate according to claim 1, characterized in that, The micro-light-emitting element array substrate further includes an encapsulation layer, which is disposed on the side of the brightness enhancement film layer away from the top side. The refractive index n of the brightness enhancement film layer satisfies: ； in, The refractive index of the micro LED chip is [value missing]. is the refractive index of the encapsulation layer.

4. The micro-light-emitting element array substrate according to claim 3, characterized in that, Along the direction from the substrate body to the micro LED chip, the thickness x of the brightness enhancement film layer satisfies: ； Where L is the wavelength of the light emitted by the micro LED chip, and k is an integer.

5. The micro-light-emitting element array substrate according to claim 1, characterized in that, The first Bragg reflector includes multiple sub-film layers, each including at least two first sub-film layers and at least two second sub-film layers, wherein the first sub-film layers and the second sub-film layers are alternately arranged along the direction from the center of the micro-light-emitting diode chip to the periphery; The refractive index of the first sub-film layer is less than that of the second sub-film layer, and the light rays are subjected to constructive interference reflection after being incident on the multilayer sub-film layers.

6. The micro-light-emitting element array substrate according to claim 5, characterized in that, Along the direction from the center of the micro-LED chip to its periphery, the thickness d of the sub-film layer satisfies: ； Wherein, λ is the wavelength of the light that needs to be reflected by the sub-film layer. is the refractive index of the sub-film layer.

7. The micro-light-emitting element array substrate according to claim 5, characterized in that, The first sub-film layer is made of titanium dioxide, and the second sub-film layer is made of silicon dioxide; or The first sub-film layer is made of titanium dioxide, and the second sub-film layer is made of aluminum oxide; or The first sub-film layer is made of silicon dioxide, and the second sub-film layer is made of silicon nitride; or The first sub-film layer is made of aluminum nitride, and the second sub-film layer is made of gallium nitride; or The first sub-film layer is made of hafnium dioxide, and the second sub-film layer is made of aluminum oxide.

8. The micro-light-emitting element array substrate according to claim 1, characterized in that, The substrate body includes multiple receiving slots, each of which corresponds to a micro light-emitting diode chip. The receiving slots are used to accommodate the corresponding micro light-emitting diode chips, and a second Bragg reflector is provided on the inner sidewall of the receiving slot.

9. The micro-light-emitting element array substrate according to claim 8, characterized in that, A first anti-penetration layer is provided between the inner wall of the receiving groove and the second Bragg reflector.

10. The micro-light-emitting element array substrate according to claim 8, characterized in that, The micro-light-emitting element array substrate further includes an encapsulation layer, which is disposed on the light-emitting side of the micro-light-emitting diode chip and between the substrate body and the micro-light-emitting diode chip, for encapsulating the micro-light-emitting diode chip in the receiving groove; The encapsulation layer includes a bottom wall facing the substrate body, a top wall away from the substrate body, and a peripheral wall disposed on the bottom wall and the top wall, wherein a second anti-penetration layer is provided on the peripheral wall.

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