Thermal oxidation treatment device for crystalline silicon battery piece

Abstract

The utility model relates to the field of crystal silicon wafer treatment, in particular to a crystal silicon battery piece thermal oxidation treatment device which comprises an oxidation box, an oxidation chamber is arranged in the upper end of the oxidation box, and a placing net rack used for placing and turning over crystal silicon wafers is arranged in the oxidation chamber. The oxidation box is further provided with a heat exchange mechanism for accelerating cooling in the oxidation chamber, the placement net rack comprises a rectangular outer frame, a plurality of placement cages are rotationally arranged in the outer frame, and a driving unit is arranged between the upper portion of one end of each outer frame and the corresponding placement cage; a plurality of partition plates are arranged in the placement cage, a plurality of placement cavities for placing crystal silicon wafers are formed between the partition plates and the placement cage, and a fence-shaped sealing door is rotationally arranged at the upper part of the placement cage. After the crystal silicon wafer is fed into the oxidation chamber to be oxidized for a certain time, the crystal silicon wafer can be turned over automatically, so that the double-sided oxidation efficiency and quality of the crystal silicon wafer are improved.

Description

Technical Field

[0001] This utility model relates to the field of crystalline silicon wafer processing, specifically to a thermal oxidation treatment device for crystalline silicon solar cells. Background Technology

[0002] During the processing of crystalline silicon solar cells, their surfaces undergo an oxidation treatment to form an insulating layer, namely a silicon dioxide (SiO2) film. This insulating layer effectively isolates the silicon wafer from current and heat conduction with other materials, prevents impurities and moisture from intruding into the silicon wafer, and also provides a certain degree of mechanical protection.

[0003] The current processing of crystalline silicon wafers generally involves sending them into an oxidation chamber for oxidation. During the process, for crystalline silicon wafers that require double-sided oxidation, after the oxidation of one side of the wafer is completed, the wafers need to be flipped over for a second oxidation process. This method not only increases the oxidation time of the wafers but also reduces the quality of the oxidation process, failing to improve the quality and efficiency of the wafers. Therefore, there is an urgent need for a thermal oxidation treatment device for crystalline silicon solar cells. Utility Model Content

[0004] To solve the above-mentioned technical problems, this utility model provides the following technical solution: a thermal oxidation treatment device for crystalline silicon solar cells, including an oxidation box, an oxidation chamber is opened inside the upper end of the oxidation box, a placement grid for placing and flipping crystalline silicon wafers is provided in the oxidation chamber, and a heat exchange mechanism for accelerating the cooling of the oxidation chamber is also provided on the oxidation box. The placement grid includes a rectangular outer frame, a plurality of placement cages are rotatably arranged inside the outer frame, and a driving unit is provided between the upper part of one end of the plurality of outer frames and the plurality of placement cages.

[0005] Preferably, the placement cage has several partitions inside, and the partitions and the placement cage form multiple placement cavities for placing silicon wafers. The upper part of the placement cage is rotatably equipped with a fence-like sealing door, and a latch is movably installed on the sealing door. A spring is sleeved on the latch, and one end of the latch is inserted into the placement cage.

[0006] Preferably, the placement cage is provided with connecting shafts at both ends, and one end of the connecting shaft is rotatably connected to the inner side of the outer frame.

[0007] Preferably, the drive unit includes several gears, which are fixed on corresponding connecting shafts. Vertical plates are fixed at both the inner and outer ends of the upper part of one side of the outer frame. Toothed plates are slidably arranged between the vertical plates. An electric actuator is provided on one of the vertical plates, and the output shaft of the electric actuator is fixedly connected to one end of the toothed plate.

[0008] Preferably, the bottom of the toothed plate is provided with a plurality of tooth block groups, each tooth block group consisting of multiple tooth blocks, and the tooth block groups are rotatably engaged with the corresponding gears below.

[0009] Preferably, the heat exchange mechanism includes a heat exchange tube frame fixed above the oxidation chamber, and a water tank is fixed on the back of the processing box. The water tank is connected to a water pump, the water pump is provided with an inlet pipe, and the water tank is provided with an outlet pipe. The inlet pipe and the outlet pipe are respectively connected to the heat exchange tube frame.

[0010] By employing the above technical solution, this utility model provides a thermal oxidation treatment device for crystalline silicon solar cells, which has at least the following beneficial effects:

[0011] 1. The thermal oxidation treatment device for crystalline silicon solar cells is equipped with an oxidation chamber, an outer frame, several placement cages and a drive unit. After the crystalline silicon wafers are sent into the oxidation chamber for oxidation for a certain period of time, the device can automatically flip the crystalline silicon wafers, thereby improving the efficiency and quality of double-sided oxidation of crystalline silicon wafers.

[0012] 2. The thermal oxidation treatment device for crystalline silicon solar cells is further equipped with a heat exchange tube rack, a water tank, a water pump, an inlet pipe, and an outlet pipe. It can accelerate the reduction of the internal temperature of the oxidation chamber when the oxidized crystalline silicon wafer needs to be removed, thereby reducing the time spent waiting for the oxidation chamber to cool down when the crystalline silicon wafer is removed. Attached Figure Description

[0013] The accompanying drawings, which are provided to further illustrate this application and form part of this application, illustrate exemplary embodiments of this application and are used to explain this application, but do not constitute an undue limitation of this application.

[0014] In the attached diagram:

[0015] Figure 1 This is a schematic diagram of the external first-view structure of this utility model;

[0016] Figure 2 This is a schematic diagram of the external second-view structure of this utility model;

[0017] Figure 3 This is a schematic diagram of the structure for placing the mesh frame in this utility model;

[0018] Figure 4 for Figure 3 A magnified structural diagram of part A in the middle.

[0019] In the diagram: 1. Oxidation box; 101. Oxidation chamber; 2. Placement frame; 201. Outer frame; 202. Placement cage; 203. Drive unit; 2031. Gear; 2032. Vertical plate; 2033. Tooth plate; 2034. Electric actuator; 3. Heat exchange mechanism; 301. Heat exchange tube rack; 302. Water tank; 303. Water pump; 304. Inlet pipe; 305. Outlet pipe. Detailed Implementation

[0020] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0021] Combination Figure 1-4 As shown, this utility model provides: a thermal oxidation treatment device for crystalline silicon solar cells, including an oxidation box 1, an oxidation chamber 101 is opened inside the upper end of the oxidation box 1, a placement frame 2 for placing and flipping crystalline silicon wafers is installed in the oxidation chamber 101, and a heat exchange mechanism 3 for accelerating the cooling inside the oxidation chamber 101 is also installed on the oxidation box 1. The placement frame 2 includes a rectangular outer frame 201, and a plurality of placement cages 202 are rotatably installed in the outer frame 201. A drive unit 203 is installed between the upper part of one end of the plurality of outer frames 201 and the plurality of placement cages 202. By placing crystalline silicon wafers in batches in the placement frame 2 and sending them into the oxidation chamber 101 for oxidation treatment, the crystalline silicon wafers can be automatically flipped after a certain period of time, thereby greatly reducing the time required for double-sided oxidation of crystalline silicon wafers and improving the quality in the oxidation process.

[0022] The placement cage 202 has several partitions installed inside, and the partitions and the placement cage 202 form multiple placement cavities for placing silicon wafers. The upper part of the placement cage 202 is rotatably equipped with a fence-like sealing door. A pin is movably installed on the sealing door, and a spring is sleeved on the pin. One end of the pin is inserted into the placement cage 202. The sealing door is opened and closed to pick up and put in the silicon wafers.

[0023] The placement cage 202 is equipped with connecting shafts at both ends. One end of the connecting shaft is rotatably connected to the inner side of the outer frame 201. The drive unit 203 includes several gears 2031, which are fixed on the corresponding connecting shafts. Vertical plates 2032 are fixed at both the inner and outer ends of the upper part of one side of the outer frame 201. Tooth plates 2033 are slidably installed between the vertical plates 2032. An electric push rod 2034 is installed on one vertical plate 2032. The output shaft of the electric push rod 2034 is fixedly connected to one end of the tooth plate 2033. Several tooth block groups are installed at the bottom of the tooth plate 2033. Each tooth block group consists of multiple tooth blocks and rotates with the corresponding gear 2031 below. The drive unit 203 drives the placement cage 202 to rotate, thereby enabling the silicon wafers in each placement cavity of the placement cage 202 to rotate and flip.

[0024] The heat exchange mechanism 3 includes a heat exchange tube frame 301 welded above the oxidation chamber 101, and a water tank 302 fixed on the back of the treatment box. The water tank 302 is connected to a water pump 303. An inlet pipe 304 is installed on the water pump 303, and an outlet pipe 305 is installed on the water tank 302. Both are equipped with control valves, which are normally closed. The inlet pipe 304 and the outlet pipe 305 are respectively connected to the heat exchange tube frame 301. After the oxidation treatment is completed, the heat exchange mechanism 3 can quickly absorb the heat in the oxidation chamber 101 to reduce the temperature in the oxidation chamber 101.

[0025] In this scheme, the placement frame 2 is removed, the sealed doors on each placement cage 202 are opened, and then the silicon wafers are placed one by one into the corresponding placement chambers. The sealed doors are then closed, and the placement frame 2 is sent into the oxidation chamber 101. The isolation door on the oxidation chamber 1 is closed, causing the oxidation chamber 101 to heat up and oxygen to be introduced (the corresponding oxygen supply equipment is existing technology and is not described in detail here). After the silicon wafers react with high temperature and oxygen, a silicon dioxide protective layer is formed on the surface. After a period of time, the electric push rod 2034 on the outer frame 201 extends, pushing the toothed plate 20. The horizontal movement of 33 causes the gear 2031, which is in rotational engagement with the toothed block assembly on the toothed plate 2033, to rotate, thereby driving the corresponding placement cage 202 to rotate 180° and flip the silicon wafer. After completing the double-sided oxidation, while waiting for the oxidation chamber 101 to cool down, water from the water tank 302 is sent into the heat exchange tube rack 301 through the water pump 303 and the water inlet pipe 304. The water in the heat exchange tube rack 301 can absorb the heat in the oxidation chamber 101 and carry it into the water tank 302. This process is repeated to accelerate the temperature drop in the oxidation chamber 1, thereby reducing the waiting time.

[0026] The control method of this utility model is automatic control through a controller. The control circuit of the controller can be implemented by simple programming by those skilled in the art. The power supply is also common knowledge in the field. Since this utility model is mainly used to protect mechanical devices, the control method and circuit connection will not be explained in detail.

[0027] It should be noted that, in this document, terms such as “comprising,” “including,” or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0028] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A thermal oxidation treatment apparatus for crystalline silicon solar cells, comprising an oxidation chamber (1), characterized in that: The upper end of the oxidation box (1) is provided with an oxidation chamber (101), and the oxidation chamber (101) is provided with a placement grid (2) for placing and flipping silicon wafers. The oxidation box (1) is also provided with a heat exchange mechanism (3) to accelerate the cooling of the oxidation chamber (101). The placement frame (2) includes a rectangular outer frame (201), and a plurality of placement cages (202) are rotatably arranged inside the outer frame (201). A drive unit (203) is arranged between the upper part of one end of the plurality of outer frames (201) and the plurality of placement cages (202).

2. The thermal oxidation treatment apparatus for crystalline silicon solar cells according to claim 1, characterized in that: The placement cage (202) has several partitions inside, and the partitions and the placement cage (202) form multiple placement cavities for placing silicon wafers. The upper part of the placement cage (202) is rotatably equipped with a fence-like sealing door. A pin is movably installed on the sealing door, and a spring is sleeved on the pin. One end of the pin is inserted into the placement cage (202).

3. The thermal oxidation treatment apparatus for crystalline silicon solar cells according to claim 1, characterized in that: The placement cage (202) is provided with connecting shafts at both ends, and one end of the connecting shaft is rotatably connected to the inner side of the outer frame (201).

4. The thermal oxidation treatment apparatus for crystalline silicon solar cells according to claim 3, characterized in that: The drive unit (203) includes several gears (2031), which are fixed on corresponding connecting shafts. Vertical plates (2032) are fixed at both the inner and outer ends of the upper part of one side of the outer frame (201). Toothed plates (2033) are slidably arranged between the vertical plates (2032). An electric push rod (2034) is provided on one of the vertical plates (2032), and the output shaft of the electric push rod (2034) is fixedly connected to one end of the toothed plate (2033).

5. The thermal oxidation treatment apparatus for crystalline silicon solar cells according to claim 4, characterized in that: The bottom of the toothed plate (2033) is provided with several tooth block groups, each consisting of multiple tooth blocks, and the tooth block groups are rotatably engaged with the corresponding gear (2031) below.

6. The thermal oxidation treatment apparatus for crystalline silicon solar cells according to claim 1, characterized in that: The heat exchange mechanism (3) includes a heat exchange tube frame (301) fixed above the oxidation chamber (101), and a water tank (302) fixed on the back of the processing box. The water tank (302) is connected to a water pump (303), and the water pump (303) is provided with an inlet pipe (304). The water tank (302) is provided with an outlet pipe (305). The inlet pipe (304) and the outlet pipe (305) are respectively connected to the heat exchange tube frame (301).

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