Multiband direct-writing exposure lens and exposure equipment

By using a multi-band micro-LED array light source and optimized arrangement, the problem of low exposure efficiency in traditional photolithography technology has been solved, achieving a high-efficiency exposure effect, especially for solder resist inks.

CN223566026UActive Publication Date: 2025-11-18SUZHOU YUANZHUO OPTOELECTRONICS TECH CO LTD
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Patent Information

Application Number
CN202422649045.3
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Priority Date
2023-11-29
Filing Date
2024-10-31
Publication Date
2025-11-18
Estimated Expiration
2034-10-31

AI Technical Summary

Technical Problem

Traditional photolithography technology has a long production cycle and low exposure efficiency, especially for solder resist inks, where the utilization rate of light sources in the 200-450nm wavelength band is low.

Method used

A multi-band micro-light-emitting diode array is used as the light source and projected onto the workpiece through an imaging lens. The micro-light-emitting diode array includes at least two wavelengths, and the arrangement is optimized to improve light energy utilization and exposure efficiency.

Benefits of technology

It reduces light energy loss, improves exposure efficiency and space utilization of the exposure lens, and enhances the exposure effect of solder resist ink-based photoresists.

✦ Generated by Eureka AI based on patent content.

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Abstract

The multiband direct writing type exposure lens comprises a light source and an imaging lens, light emitted by the light source is projected to a workpiece through the imaging lens, the light source is a micro light-emitting diode array, the micro light-emitting diode array is connected with a graph control unit, and the graph control unit is connected with the imaging lens. The graphic control unit controls the on or off of each micro light-emitting diode, and the micro light-emitting diode array comprises micro light-emitting diodes with at least two wavelengths. According to the direct-writing type exposure lens, the multiband micro light-emitting diode array is adopted as a light source to expose a workpiece, a middle light beam reflection mechanism is reduced, light energy loss is reduced, the exposure efficiency is high, the space structure of the exposure lens is reduced, and dense arrangement is facilitated.
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Description

TECHNICAL FIELD

[0001] The utility model relates to direct writing exposure technical field, concretely relates to a kind of direct writing exposure lens and exposure equipment of application multiband light source. BACKGROUND

[0002] Exposure technology is widely used in semiconductor and PCB production field, and is one of process steps for manufacturing semiconductor devices, chips and PCB board and other products, which is used to print feature pattern on substrate surface, and finally obtains the pattern structure required according to circuit design. Traditional photolithography technology needs to make mask master or film negative to perform exposure operation, and the production cycle is long, and each version corresponds to a single pattern, which cannot be widely applied. To solve the problem of traditional photolithography technology, direct writing exposure technology emerges as the times require, which uses digital light processing technology to realize editing different pattern structures through programmable digital micromirror device (DMD), which can quickly switch patterns, and can not only reduce cost, but also reduce process time, and is widely used in direct writing exposure technology field.

[0003] When programmable digital micromirror device (DMD) is used, light source is illuminated on digital micromirror device (DMD), and then image is generated by controlling digital micromirror device (DMD), and imaging is performed on photosensitive surface through imaging lens. In this way, the light source is projected on digital micromirror device (DMD) through the illumination system, which will waste energy. The energy utilization rate of digital micromirror device (DMD) itself is low, and the light power density is low, especially for the light source in the wave band of 200-450 nm. Especially for the solder resist type photoresist, the mixed light beam in the short wave range (wavelength between 350 nm and 400 nm) is better, so for the solder resist type photoresist, the current light path structure has low exposure efficiency. UTILITY MODEL CONTENTS

[0004] In view of the above problems, the utility model provides a kind of direct writing exposure lens and exposure equipment, improves exposure efficiency.

[0005] The technical scheme is as follows: a kind of multiband direct writing exposure lens, it includes light source and imaging lens, the light emitted by the light source is projected to workpiece by the imaging lens, the light source is micro light emitting diode array, the micro light emitting diode array is connected pattern control unit, the pattern control unit controls the opening or closing of each micro light emitting diode, the micro light emitting diode array includes at least two kinds of wavelength micro light emitting diode.

[0006] Preferably, the micro light emitting diodes of different wavelengths are arranged at intervals.

[0007] Preferably, the micro light emitting diodes of different wavelengths are arranged in order, and the micro light emitting diodes of each row are arranged in order repeatedly, and the micro light emitting diodes of each column are arranged in order repeatedly.

[0008] Preferably, the micro light emitting diodes of each row or each column have the same wavelength, and the micro light emitting diodes of adjacent rows or adjacent columns have different wavelengths.

[0009] Preferably, the micro light emitting diodes of different wavelengths are arranged in order, the micro light emitting diodes of each row have the same wavelength, the micro light emitting diodes of each column are arranged in order repeatedly, the micro light emitting diodes of each column have the same wavelength, and the micro light emitting diodes of each column are arranged in order repeatedly.

[0010] Preferably, at least two micro light emitting diodes of the same wavelength form a group, the micro light emitting diode groups of different wavelengths are arranged in order, the micro light emitting diode groups of each row are arranged in order repeatedly, and the micro light emitting diode groups of each column are arranged in order repeatedly.

[0011] Preferably, the micro light emitting diode array is located above the imaging lens.

[0012] Preferably, the imaging lens comprises a first imaging unit, an intermediate image plane, and a second imaging unit, the intermediate image plane is located between the first imaging unit and the second imaging unit, and a microlens array is arranged.

[0013] Preferably, the imaging lens further comprises a light splitting unit.

[0014] A direct writing exposure device comprises a base, a support and a movement platform arranged on the base, an exposure mechanism and a positioning mechanism arranged on the support, and the exposure mechanism comprises a plurality of the above-mentioned exposure lenses.

[0015] Compared with the prior art, the direct writing exposure lens uses a multi-band micro light emitting diode array as a light source to expose a workpiece, reduces the intermediate light beam reflection mechanism, reduces the loss of light energy, has high exposure efficiency, and the spatial structure of the exposure lens is reduced, facilitating dense arrangement. At the same time, compared with the laser light source transmitted by the optical fiber, the micro light emitting diode array is more convenient to arrange in order, so that the multi-band light source emits light more uniformly, and the exposure effect of the solder resist type photoresist is improved. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 FIG. 1 is a schematic diagram of an embodiment of a direct writing exposure device.

[0017] Figure 2 FIG. 4 is a schematic diagram of an embodiment of an exposure lens.

[0018] Figure 3 FIG. 6 is a schematic diagram of a micro light emitting diode array.

[0019] Figure 4 This is a schematic diagram of an example of a multi-band micro-light-emitting diode array layout.

[0020] Figure 5 This is a schematic diagram of a second example of a multi-band micro-light-emitting diode array layout.

[0021] Figure 6 This is a schematic diagram of Example 3 of a multi-band micro-light-emitting diode array layout.

[0022] Figure 7 A schematic diagram showing the tilting arrangement of the micro-LED array.

[0023] Figure 8 This is a schematic diagram of another embodiment of the exposure lens. Detailed Implementation

[0024] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention.

[0025] like Figure 1 The direct-write exposure device shown includes a base 100, a support 101 and a motion platform 102 mounted on the base, an exposure mechanism 103 and an alignment mechanism 104 mounted on the support, and the exposure mechanism 103 including a plurality of exposure lenses 105 arranged in rows and columns with adjacent rows of lenses staggered. A workpiece is placed on the motion platform 102, which moves the workpiece to a position below the exposure mechanism 103 for exposure.

[0026] The exposure lens 105, as Figures 2-3 As shown, it includes a light source 1 and an imaging lens 2. The light emitted by the light source 1 is projected onto a workpiece 3 coated with photoresist through the imaging lens 2. The light source 1 is located above the imaging lens 2 and is a micro-light-emitting diode array. The micro-light-emitting diode array is connected to a pattern control unit, which controls the on or off of each micro-light-emitting diode to obtain the desired exposure pattern.

[0027] The micro-LED array includes at least two types of micro-LEDs 10 with different wavelengths, which are spaced apart. The wavelength range of the micro-LED array is 200-500 nm.

[0028] The following example uses micro-light-emitting diodes that include three different wavelengths: a first micro-light-emitting diode 11 with a first wavelength λ1, a second micro-light-emitting diode 12 with a second wavelength λ2, and a third micro-light-emitting diode 13 with a third wavelength λ3.

[0029] The three wavelengths of micro-light-emitting diodes can be arranged in various ways. Figures 4-6 The example shows three of the arrangement methods.

[0030] The first arrangement method, such as Figure 4 As shown, the light wavelengths of the micro LEDs in each row are the same, and the micro LEDs in each column are arranged in a repeating sequence. The first row of micro LEDs is the first micro LED 11 with a wavelength of λ1, the second row of micro LEDs is the second micro LED 12 with a wavelength of λ2, the third row of micro LEDs is the third micro LED 13 with a wavelength of λ3, and so on, repeating the arrangement.

[0031] The second arrangement method, such as Figure 5 As shown, the micro-LEDs in each row and column are arranged in a repeating sequence. Specifically, the first row of micro-LEDs is arranged in the order of LED 11, LED 12, LED 13, and so on, in a cyclical pattern; the second row is arranged in the order of LED 12, LED 13, LED 11, and so on; the third row is arranged in the order of LED 13, LED 11, LED 12, and so on, in a cyclical pattern. This cyclical arrangement of the three rows of micro-LEDs results in a micro-LED array. This makes the distribution of different wavelengths of light projected by the light source more uniform.

[0032] Alternatively, at least two micro-light-emitting diodes of the same wavelength can be grouped together, and these groups can be arranged sequentially according to rows and columns. For example... Figure 6 As shown, the first row of micro-LEDs is arranged in the following order: first micro-LED group 21, second micro-LED group 22, third micro-LED group 23, and so on, in a cyclical arrangement. The second row of micro-LEDs is arranged in the same order: second micro-LED group 22, third micro-LED group 23, first micro-LED group 21, and so on, in a cyclical arrangement. The third row of micro-LEDs is arranged in the same order: third micro-LED group 23, first micro-LED group 21, second micro-LED group 22, and so on, in a cyclical arrangement. This cyclical arrangement of the three rows of micro-LEDs yields a micro-LED array.

[0033] In the above embodiments, the arrangement of the micro-light-emitting diode array is merely exemplary. Those skilled in the art can make various transformations based on the principles of the above embodiments, such as row and column conversions.

[0034] like Figure 7As shown, the micro-LED array can be set at an angle to the scanning direction (y-direction) to improve the resolution of the exposure system. The scanning direction refers to the direction of relative movement between the exposure system and the workpiece during exposure.

[0035] The exposure lens uses a micro-LED array as a light source, which reduces the intermediate beam reflection mechanism, reduces the spatial structure, facilitates dense arrangement, and improves exposure efficiency.

[0036] like Figure 8 As shown, another embodiment of the exposure lens is provided. The exposure lens includes a light source 1 and an imaging lens. The imaging lens includes a first imaging unit 30, an intermediate image plane 31, and a second imaging unit 32. The intermediate image plane 31 is located between the first imaging unit 30 and the second imaging unit 32 and is provided with a microlens array. The microlens array is correspondingly arranged with the micro light-emitting diode, which can reduce the light spot and improve the exposure accuracy.

[0037] Preferably, the exposure lens further includes an autofocus unit located below the second imaging unit, which adjusts the focal plane of the imaging lens in real time according to the surface shape information of the workpiece.

[0038] Preferably, the exposure lens further includes a beam-splitting unit, which splits the light beam into two optical paths and projects them onto the workpiece, resulting in two imaging areas on the workpiece. The two imaging areas are joined together perpendicular to the scanning direction (x-direction) and spaced apart in the scanning direction (y-direction). By setting the beam-splitting unit, the imaging area of ​​the exposure system is expanded, and the exposure efficiency is improved.

[0039] The direct-write exposure device is not limited to the above embodiments. For example, when the exposure lens uses a beam-splitting unit, the exposure lens can be arranged in a single row or in multiple rows, and the wavelengths of the micro-light-emitting diodes used in different rows can be different. For example, the base is provided with slide rails extending in the y-direction at both ends, and the bracket moves in the y-direction through the slide rails to expose the workpiece placed on the fixed platform.

Claims

1. A multi-band direct write exposure lens, comprising a light source and an imaging lens, light emitted by the light source being projected to a workpiece through the imaging lens, characterized in that: The light source is a micro light emitting diode array, the micro light emitting diode array is connected with a graphic control unit, the graphic control unit controls the opening or closing of each micro light emitting diode, and the micro light emitting diode array comprises micro light emitting diodes of at least two wavelengths.

2. The multi-band direct write exposure lens according to claim 1, wherein: The micro light emitting diodes of different wavelengths are arranged at intervals.

3. The multi-band direct write exposure lens according to claim 2, wherein: The micro light emitting diodes of different wavelengths are arranged in sequence, the micro light emitting diodes in each row are arranged in sequence repeatedly, and the micro light emitting diodes in each column are arranged in sequence repeatedly.

4. The multi-band direct write exposure lens of claim 1, wherein: The wavelengths of the micro light emitting diodes in each row or each column are the same, and the wavelengths of the micro light emitting diodes in adjacent rows or adjacent columns are different.

5. The multi-band direct write exposure lens of claim 4, wherein: The micro light emitting diodes of different wavelengths are arranged in sequence, the wavelengths of the micro light emitting diodes in each row are the same, the micro light emitting diodes in each column are arranged in sequence repeatedly, the wavelengths of the micro light emitting diodes in each column are the same, and the micro light emitting diodes in each row are arranged in sequence repeatedly.

6. The multi-band direct write exposure lens of claim 1, wherein: At least two micro light emitting diodes of the same wavelength form a group, the micro light emitting diode groups of different wavelengths are arranged in sequence, the micro light emitting diode groups in each row are arranged in sequence repeatedly, and the micro light emitting diode groups in each column are arranged in sequence repeatedly.

7. The multi-band direct write exposure lens of claim 1, wherein: The micro light emitting diode array is located above the imaging lens.

8. The multi-band direct write exposure lens of claim 1, wherein: The imaging lens comprises a first imaging unit, an intermediate image plane and a second imaging unit, the intermediate image plane is located between the first imaging unit and the second imaging unit, and a micro lens array is arranged.

9. The multi-band direct write exposure lens of claim 8, wherein: The imaging lens further comprises a light splitting unit.

10. A direct write exposure apparatus, comprising a base, a support and a moving platform disposed on the base, an exposure mechanism and an alignment mechanism disposed on the support, the exposure mechanism comprising a plurality of exposure lenses, characterized in that: The exposure lens is the exposure lens according to any one of claims 1-9.