Display device and display system

Abstract

The utility model relates to a display device and a display system. The display device includes a partition wall disposed on a base layer and a light emitting unit disposed adjacent to the partition wall. The partition wall includes a first partition wall layer, a second partition wall layer disposed on the first partition wall layer, a first protruding layer disposed between the first partition wall layer and the second partition wall layer, and a second protruding layer disposed on the second partition wall layer. The first protruding layer protrudes over the first partition wall layer in a direction in which a plane in which the base layer is disposed extends, and the second protruding layer protrudes over the second partition wall layer in the direction.

Description

Technical Field

[0001] This disclosure relates to a display device, a display system, and a method of manufacturing the display device. Background Technology

[0002] With the development of information technology, the importance of display devices as a connection medium between users and information is becoming increasingly prominent. Therefore, research and development of display devices are ongoing.

[0003] The display device may include a partition wall defining an area in which light-emitting units are disposed, and a protective layer covering at least a portion of the partition wall. When the protective layer of the display device is not properly formed, the risk of external impurities (e.g., moisture) penetrating into the display device may increase. Utility Model Content

[0004] This disclosure provides a display device and a method of manufacturing the display device, the display device having a protective structure capable of stably covering the partition wall while reducing the risk of external impurities penetrating.

[0005] According to embodiments of this disclosure, the display device may include a partition wall disposed on a base layer and a light-emitting unit disposed adjacent to the partition wall. The partition wall may include a first partition wall layer, a second partition wall layer disposed on the first partition wall layer, a first protruding layer disposed between the first and second partition wall layers, and a second protruding layer disposed on the second partition wall layer. The first protruding layer may protrude over the first partition wall layer in a direction extending from the plane in which the base layer is disposed, and the second protruding layer may protrude over the second partition wall layer in that direction.

[0006] According to an embodiment, the first and second partition walls may include conductive metals.

[0007] According to an embodiment, the first and second partition walls may include molybdenum (Mo).

[0008] According to an embodiment, the first partition wall layer may have approximately to approximately The thickness is within the range of [specific range], and the second partition wall layer can have a thickness of approximately [specific range]. to approximately The thickness is within the range.

[0009] According to an embodiment, the first partition wall layer and the second partition wall layer may have inclined side surfaces.

[0010] According to an embodiment, the first protruding layer can include a first-first protruding layer disposed on the first partition wall layer and a first-second protruding layer disposed on the first-first protruding layer, and the second protruding layer can include a second-first protruding layer disposed on the second partition wall layer and a second-second protruding layer disposed on the second-first protruding layer.

[0011] According to an embodiment, the first-first protruding layer and the second-first protruding layer can include at least one of silicon nitride (SiN x ), silicon oxide (SiO x ), and silicon oxynitride (SiO x N y ), and the first-second protruding layer and the second-second protruding layer can include at least one of titanium (Ti) and tantalum (Ta).

[0012] According to an embodiment, the first-second protruding layer and the second-second protruding layer can include at least one of silicon nitride (SiN x ), silicon oxide (SiO x ), and silicon oxynitride (SiO x N y ), and the first-first protruding layer and the second-first protruding layer can include at least one of titanium (Ti) and tantalum (Ta).

[0013] According to an embodiment, the first-first protruding layer and the second-first protruding layer can have a thickness in a range of about to about , and the first-second protruding layer and the second-second protruding layer can have a thickness in a range of about to about .

[0014] According to an embodiment, the first-second protruding layer and the second-second protruding layer can have a thickness in a range of about to about , and the first-first protruding layer and the second-first protruding layer can have a thickness in a range of about to about .

[0015] According to an embodiment, the display device can further include a protection layer covering at least a portion of the partition wall. The protection layer can contact a side surface of the second partition wall layer, at least a portion of a lower surface of each of the first-first protruding layer and the second-first protruding layer, and at least a portion of an upper surface of each of the first-second protruding layer and the second-second protruding layer.

[0016] According to an embodiment, the display device can further include a first electrode and a second electrode disposed on the base layer. The light emitting cell can be disposed on the first electrode, the second electrode can be disposed on the light emitting cell, and the second electrode can contact a side surface of the first partition wall layer and can not contact a side surface of the second partition wall layer.

[0017] According to an embodiment of the disclosure, a method of manufacturing a display device can include forming a partition wall on a base layer and forming a light emitting cell adjacent to the partition wall. Forming the partition wall on the base layer can include depositing a first base partition wall layer, a first base protrusion layer, a second base partition wall layer, and a second base protrusion layer on the base layer, and etching the first base partition wall layer, the first base protrusion layer, the second base partition wall layer, and the second base protrusion layer. Etching the first base partition wall layer, the first base protrusion layer, the second base partition wall layer, and the second base protrusion layer can include forming a first partition wall layer, forming a second partition wall layer on the first partition wall layer, forming a first protrusion layer between the first partition wall layer and the second partition wall layer, and forming a second protrusion layer on the second partition wall layer. The first protrusion layer can protrude above the first partition wall layer in a direction in which a plane of the base layer extends, and the second protrusion layer can protrude above the second partition wall layer in the direction.

[0018] According to an embodiment, the first partition wall layer and the second partition wall layer can include molybdenum (Mo).

[0019] According to an embodiment, the first base partition wall layer and the second base partition wall layer can be deposited through a sputtering process.

[0020] According to an embodiment, the first protrusion layer can include a first-first protrusion layer disposed on the first partition wall layer and a first-second protrusion layer disposed on the first-first protrusion layer, and the second protrusion layer can include a second-first protrusion layer disposed on the second partition wall layer and a second-second protrusion layer disposed on the second-first protrusion layer.

[0021] According to an embodiment, the first-first protrusion layer and the second-first protrusion layer can include at least one of silicon nitride (SiN x ), silicon oxide (SiO x ), and silicon oxynitride (SiO x N y ), and can be deposited through a chemical vapor deposition (CVD) process, and the first-second protrusion layer and the second-second protrusion layer can include at least one of titanium (Ti) and tantalum (Ta).

[0022] According to an embodiment, the first-first protrusion layer and the second-first protrusion layer can include at least one of silicon nitride (SiN x ), silicon oxide (SiO x) and silicon oxynitride (SiO x N y ) and can be deposited through a chemical vapor deposition (CVD) process, and the first-first protruding layer and the second-first protruding layer can include at least one of titanium (Ti) and tantalum (Ta).

[0023] According to an embodiment, when the first base separation wall layer, the first base protruding layer, the second base separation wall layer, and the second base protruding layer are etched, the first base separation wall layer, the first base protruding layer, the second base separation wall layer, and the second base protruding layer can be batch dry-etched, the first base separation wall layer can form a first intermediate separation wall layer, and the second base separation wall layer can form a second intermediate separation wall layer.

[0024] According to an embodiment, the first intermediate separation wall layer and the second intermediate separation wall layer can be further dry-etched to form a first separation wall layer and a second separation wall layer, respectively.

[0025] According to an embodiment of the disclosure, a display device and a method of manufacturing the display device can be provided, which have a protective structure capable of stably covering a separation wall while reducing the risk of infiltration of external impurities. BRIEF DESCRIPTION OF DRAWINGS

[0026] The above and other features of the disclosure will become more apparent by describing in detail embodiments thereof with reference to the attached drawings, in which:

[0027] Figure 1 is a schematic plan view illustrating a display device according to an embodiment;

[0028] Figure 2 is a schematic cross-sectional view illustrating a display device according to an embodiment;

[0029] Figure 3 is a schematic cross-sectional view illustrating an embodiment of a light emitting element of Figure 2

[0030] Figure 4 is a schematic cross-sectional view illustrating another embodiment of a light emitting element of Figure 2

[0031] Figure 5 is a schematic block diagram illustrating an electrical connection structure for a light emitting element according to an embodiment;

[0032] Figure 6 is a schematic flowchart illustrating a method of manufacturing a display device according to an embodiment;

[0033] Figures 7 to 13 ​​This is a schematic cross-sectional view illustrating each process step of the method for manufacturing a display device according to an embodiment;

[0034] Figure 14 It is a schematic block diagram of a display system according to an embodiment; and

[0035] Figure 15 and Figure 16 It is shown Figure 14 A schematic 3D diagram illustrating an application example of the display system. Detailed Implementation

[0036] This disclosure can be modified in various ways and has various forms. Therefore, specific embodiments will be shown in the accompanying drawings and described in detail in the specification. However, it should be understood that this disclosure is not intended to be limited to the specific forms disclosed, and this disclosure includes all modifications, equivalents, and substitutions within the spirit and technical scope of this disclosure.

[0037] Although the terms “first,” “second,” etc., may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Therefore, without departing from the teachings of this disclosure, the first element discussed below may be referred to as the second element. In the following description, singular expressions include plural expressions unless the context clearly specifies otherwise.

[0038] The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. Furthermore, when used in this specification, the terms “comprising,” “including,” “containing,” and / or “comprising” designate the presence of stated features, integrals, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or groups thereof.

[0039] When an element or layer is referred to as being “on”, “connected to”, or “coupled to” another element or layer, it can be directly on, connected or coupled to the other element or layer, or intervening elements or layers can be present. In contrast, when an element or layer is referred to as being “directly on”, “directly connected to”, or “directly coupled to” another element or layer, there are no intervening elements or layers present. In this regard, the term “connected” can refer to physical or electrical and / or fluid connection, with or without intervening elements. Also, when an element is referred to as being “in contact” with another element, it can be “in electrical contact” or “in physical contact” with the other element; or “indirectly in contact” or “directly in contact” with the other element.

[0040] Spatially relative terms, such as “beneath”, “below”, “lower”, “under”, “above”, “upper”, “on”, “directly on”, “side” (e.g., as in “sidewall”), and the like, can be used herein for ease of description to describe one element’s or feature’s relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientations depicted in the figures. For example, if a device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary term “below” can encompass both an orientation of above and below. The devices can be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0041] In view of the measurements discussed and the errors associated with measurements of particular quantities (i.e., limitations of the measurement system), “about” or “approximately,” as used herein, includes the recited value and means within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art. For example, “about” can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the recited value.

[0042] In the description and claims, for purposes of interpretation of the specification and of the claims, the phrase “at least one of” A and B is intended to include the instances where either A is included or B is included, or both A and B are included. In the description and claims, for purposes of interpretation of the specification and of the claims, the term “and / or” is intended to include any and all combinations of one or more of the associated listed items. For example, the phrase “A and / or B” is intended to include: A, B, or A and B. The term “and / or” can be used in conjunction with any of the following: “comprising”, “containing”, “including”, “having”, “involving”, “plurality”, “susceptible of”, “having about”, “including about”, “comprising about”, “consisting essentially of”, “consisting essentially of about”, “consisting of”, “consisting of about”, “one or more of”, “at least one of”, “one or more of the following”, “one or more of the items”, “one or more of the following items”, and / or “one or more of the claimed items”.

[0043] Unless otherwise defined or implied herein, all terms used are to be given their ordinary meaning as understood by one of ordinary skill in the art to which this disclosure pertains. It will also be appreciated that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined in the specification.

[0044] The present disclosure relates to a display device and a method of manufacturing the display device. Hereinafter, a display device, a display system, and a method of manufacturing the display device according to an embodiment are described with reference to the accompanying drawings.

[0045] Figure 1 is a schematic plan view illustrating a display device according to an embodiment.

[0046] Referring to Figure 1 , the display device DD can be configured to emit light. The display device DD can include a light emitting element LD (refer to Figure 2 ). According to an embodiment, the display device DD can be a device for displaying a moving image or a still image. The display device DD can be used as a display screen of various products such as not only a portable electronic device but also a television, a notebook computer, a monitor, a billboard, and an Internet of Things (IOT) device, a portable electronic device such as a mobile phone, a smart phone, a tablet Personal Computer (PC), a smart watch, a watch phone, a mobile communication terminal, an electronic notebook, an electronic book, a Portable Multimedia Player (PMP), a navigation device, and an Ultra Mobile PC (UMPC). However, the application field of the display device DD is not limited to the specific examples.

[0047] The display device DD can be formed in a planar shape of a rectangle having a short side in a first direction DR1 and a long side in a second direction DR2 intersecting the first direction DR1 in a plan view. Corners where the short side in the first direction DR1 and the long side in the second direction DR2 intersect can be rounded to have a curvature, or can be formed as a right angle. The planar shape of the display device DD is not limited to a quadrilateral, and can be formed as another polygon, or can be formed as a rounded shape such as a circular shape or an elliptical shape. The display device DD can be formed to be flat, but the present disclosure is not limited thereto. For example, the display device DD can include curved portions formed at left and right ends and having a constant curvature or a varying curvature. The display device DD can be formed to be flexible to be bent, curved, folded, or rolled.

[0048] In the disclosure, the first direction DR1 can be a row direction of the pixels PXL and can be a "horizontal" direction. The second direction DR2 can be a column direction of the pixels PXL. The third direction DR3 can be a display direction of the display device DD or a normal direction of a plane in which the base layer BSL is disposed.

[0049] The display device DD can include a display area DA and a non-display area NDA. The non-display area NDA can be an area other than the display area DA. The non-display area NDA can surround at least a portion of the display area DA in a plan view.

[0050] The display area DA can be an area in which the pixels PXL are disposed. The non-display area NDA can be an area in which the pixels PXL are not disposed. The driving circuit units, lines, and pads connected to the pixels PXL of the display area DA can be disposed in the non-display area NDA.

[0051] According to an embodiment, the pixel PXL (or the sub-pixel SPX) can include a first sub-pixel SPX1, a second sub-pixel SPX2, and a third sub-pixel SPX3. At least one of the first sub-pixel SPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3 can form one pixel unit capable of emitting light of various colors. In Figure 1 In the disclosure, an embodiment in which each pixel PXL includes three sub-pixels SPX1, SPX2, and SPX3 (e.g., a first sub-pixel SPX1, a second sub-pixel SPX2, and a third sub-pixel SPX3) is illustrated, but the disclosure is not limited thereto.

[0052] According to an embodiment, the pixel PXL (or the sub-pixel SPX) can be arranged according to a stripe or However, the disclosure is not necessarily limited thereto.

[0053] The first sub-pixel SPX1 can emit first light, the second sub-pixel SPX2 can emit second light, and the third sub-pixel SPX3 can emit third light. The first light can be light of a red wavelength band, the second light can be light of a green wavelength band, and the third light can be light of a blue wavelength band. The red wavelength band can be a wavelength band in a range of about 600 nm to about 750 nm, the green wavelength band can be a wavelength band in a range of about 480 nm to about 560 nm, and the blue wavelength band can be a wavelength band in a range of about 370 nm to about 460 nm, but the disclosure is not limited thereto.

[0054] Each of the first sub-pixel SPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3 can include an organic light emitting element (an organic light emitting diode (OLED)) as a light emitting element that emits light.

[0055] Hereinafter, reference will be made toFigures 2 to 4 A display device DD according to an embodiment is described including an organic light emitting element.

[0056] Figure 2 is a schematic cross-sectional view illustrating a display device according to an embodiment. Figure 3 is a schematic cross-sectional view illustrating Figure 2 an embodiment of a light emitting element of Figure 4 Figure 2 another embodiment of a light emitting element of

[0057] Referring to Figure 2 , the display device DD can include a pixel circuit layer PCL and a light emitting element layer LEL.

[0058] The pixel circuit layer PCL can be a layer including a pixel circuit PXC (see Figure 5 ) for driving a light emitting element LD. The pixel circuit layer PCL can include a base layer BSL, a conductive layer for forming the pixel circuit PXC, and an insulating layer disposed between the conductive layers.

[0059] According to an embodiment, the pixel circuit PXC can include circuit elements (e.g., a driving transistor, etc.) and can be electrically connected to the light emitting element LD to provide an electrical signal to the light emitting element LD to emit light.

[0060] The light emitting element layer LEL can be disposed on the pixel circuit layer PCL. According to an embodiment, the light emitting element layer LEL can include a pixel defining layer PDL, a partition wall PW, a light emitting element LD, and a protective layer IL.

[0061] The light emitting element LD can be disposed on the pixel circuit layer PCL or the base layer BSL. According to an embodiment, the light emitting element LD can include a first electrode ELT1, a light emitting unit EL, and a second electrode ELT2. The first electrode ELT1 can be disposed on the base layer BSL (or the pixel circuit layer PCL). The light emitting unit EL can be disposed on the first electrode ELT1. The second electrode ELT2 can be disposed on the light emitting unit EL.

[0062] According to an embodiment, the light emitting unit EL can be disposed in an area (e.g., a first sub-pixel area SPXA1, a second sub-pixel area SPXA2, or a third sub-pixel area SPXA3 of Figure 2 ). Each of the light emitting units EL can be disposed between the partition walls PW. The light emitting units EL can be disposed adjacent to the partition walls PW.

[0063] ​According to an embodiment, the sub-pixel SPX can include light emitting units EL respectively emitting different colors of light. For example, the light emitting units EL can include a first light emitting unit EL1 for forming a first sub-pixel SPX1 that emits light of a first color, a second light emitting unit EL2 for forming a second sub-pixel SPX2 that emits light of a second color, and a third light emitting unit EL3 for forming a third sub-pixel SPX3 that emits light of a third color. However, the disclosure is not limited thereto. For example, each of the sub-pixels SPX can include light emitting units EL that emit the same color, and the display device DD can further include color filters and can further include a wavelength conversion structure (e.g., quantum dots), etc.

[0064] A surface of the light emitting unit EL can be electrically connected to a surface of the first electrode ELT1, and another surface of the light emitting unit EL can be electrically connected to the second electrode ELT2.

[0065] The first electrode ELT1 can be an anode electrode for the light emitting unit EL, and the second electrode ELT2 can be a cathode electrode for the light emitting unit EL. According to an embodiment, the first electrode ELT1 and the second electrode ELT2 can include a conductive material. For example, the first electrode ELT1 can include a conductive material having reflective properties, and the second electrode ELT2 can include a transparent conductive material, but the disclosure is not necessarily limited thereto. The first electrode ELT1 can be a cathode electrode for the light emitting unit EL, and the second electrode ELT2 can be an anode electrode for the light emitting unit EL.

[0066] Referring to Figure 3 , the light emitting unit EL can have a multi-layer thin film structure including a light generating layer (e.g., a light emitting layer EML). The light emitting unit EL can include a hole injection layer HIL that injects holes, a hole transport layer HTL that has excellent hole transport properties and suppresses the movement of electrons that are not combined in the light emitting layer EML to increase the opportunity for the recombination of holes and electrons, a light emitting layer EML that emits light by the recombination of injected electrons and holes, an electron transport layer ETL for easily transporting electrons to the light emitting layer EML, and an electron injection layer EIL that injects electrons. The light emitting unit EL can emit light based on an electrical signal provided from an anode electrode (e.g., the first electrode ELT1) and a cathode electrode (e.g., the second electrode ELT2).

[0067] According to an embodiment, referring to Figure 4 , the light emitting element LD can include a series structure. For example, the light emitting unit EL can include a first light emitting unit ELa, a charge generation layer CGL, and a second light emitting unit ELb.

[0068] The first light emitting unit ELa can be provided in a structure in which a hole injection layer HIL, a first hole transport layer HTLa, a first light emitting layer EMLa, and a first electron transport layer ETLa are stacked in the third direction DR3. The second light emitting unit ELb can be provided in a structure in which a second hole transport layer HTLb, a second light emitting layer EMLb, a second electron transport layer ETLb, and an electron injection layer EIL are stacked in the third direction DR3.

[0069] In an embodiment, a buffer layer (not shown) can be provided on the first light emitting layer EMLa and the second light emitting layer EMLb. The buffer layer can include an electron transport compound.

[0070] The charge generation layer CGL can provide charges to the first light emitting unit ELa and the second light emitting unit ELb. The charge generation layer CGL can include an n-type charge generation layer n-CGL for providing charges to the first light emitting unit ELa and a p-type charge generation layer p-CGL for providing holes to the second light emitting unit ELb. The n-type charge generation layer n-CGL can include a metal material as a dopant.

[0071] In Figure 4 In an embodiment, two light emitting units ELa and ELb of the stacked light emitting element LD are shown, but the present disclosure is not limited thereto. For example, three or four or more light emitting units can be stacked with each other in the light emitting element LD.

[0072] The pixel definition layer PDL can be provided on the pixel circuit layer PCL. At least a portion of the pixel definition layer PDL can be spaced apart from each other with the light emitting unit EL interposed therebetween. At least a portion of the pixel definition layer PDL can be provided on the first electrode ELT1. The pixel definition layer PDL can be provided adjacent to the first electrode ELT1. For example, the pixel definition layer PDL can be provided adjacent to the first electrode ELT1 in a direction in which a plane in which the base layer BSL is provided extends. The pixel definition layer PDL can expose at least a portion of the first electrode ELT1. At least a portion of the pixel definition layer PDL can overlap the first electrode ELT1 in a plan view. The pixel definition layer PDL can cover an end portion of the first electrode ELT1.

[0073] The pixel definition layer PDL can include an inorganic material. For example, the pixel definition layer PDL can include silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y ), and aluminum oxide (AlO xThe pixel-defining layer PDL can include at least one of an organic material. However, the disclosure is not necessarily limited thereto. The pixel-defining layer PDL can include at least one of an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, and a polyimide resin.

[0074] The separation wall PW can be disposed on the pixel-defining layer PDL. Each of the separation walls PW can be disposed between the light-emitting units EL. The separation wall PW can be disposed between or at a boundary of adjacent subpixels SPX1, SPX2, and SPX3, and define the first subpixel area SPXA1, the second subpixel area SPXA2, and the third subpixel area SPXA3.

[0075] The separation wall PW can include a multi-layer stacked structure. For example, the separation wall PW can include six or more layers. According to an embodiment, the separation wall PW can include a first separation wall layer PW1, a second separation wall layer PW2, a first protrusion layer PL1, and a second protrusion layer PL2. According to an embodiment, the first protrusion layer PL1 can include a first (1-1) protrusion layer PL1_1 and a first (1-2) protrusion layer PL1_2. According to an embodiment, the second protrusion layer PL2 can include a second (2-1) protrusion layer PL2_1 and a second (2-2) protrusion layer PL2_2. However, the disclosure is not necessarily limited thereto. Hereinafter, the disclosure is described based on an embodiment in which the separation wall PW has a structure having six layers including the first separation wall layer PW1, the second separation wall layer PW2, the first (1-1) protrusion layer PL1_1, the first (1-2) protrusion layer PL1_2, the second (2-1) protrusion layer PL2_1, and the second (2-2) protrusion layer PL2_2.

[0076] The first separation wall layer PW1, the first protrusion layer PL1, the second separation wall layer PW2, and the second protrusion layer PL2 can be stacked in a thickness direction (e.g., the third direction DR3) of the base layer BSL. The first separation wall layer PW1, the second separation wall layer PW2, the first (1-1) protrusion layer PL1_1, the first (1-2) protrusion layer PL1_2, the second (2-1) protrusion layer PL2_1, and the second (2-2) protrusion layer PL2_2 can be sequentially stacked in a thickness direction (e.g., the third direction DR3) of the base layer BSL.

[0077] The first partition wall layer PW1 can be disposed on the pixel definition layer PDL. According to an embodiment, the first partition wall layer PW1 can be directly disposed on the pixel definition layer PDL. The first protrusion layer PL1 can be disposed on the first partition wall layer PW1. According to an embodiment, the first protrusion layer PL1 can be directly disposed on the first partition wall layer PW1. The second partition wall layer PW2 can be disposed on the first protrusion layer PL1. According to an embodiment, the second partition wall layer PW2 can be directly disposed on the first protrusion layer PL1. The second protrusion layer PL2 can be disposed on the second partition wall layer PW2. According to an embodiment, the second protrusion layer PL2 can be directly disposed on the second partition wall layer PW2.

[0078] In the disclosure, the width can be defined based on a direction in which a plane in which the base layer BSL is disposed extends, for example, the first direction DR1 or the second direction DR2.

[0079] According to an embodiment, each of the first partition wall layer PW1 and the second partition wall layer PW2 can have a width smaller than a width of the first protrusion layer PL1 or the second protrusion layer PL2. For example, the first protrusion layer PL1 can protrude more outward than the first partition wall layer PW1 in the first direction DR1 or the second direction DR2. The second protrusion layer PL2 can protrude more outward than the second partition wall layer PW2 in the first direction DR1 or the second direction DR2. In the disclosure, outward can be a direction in which the partition wall PW faces the light emitting unit EL. Outward can be a direction in which a side surface of the partition wall PW faces. Outward can be a direction in which the first protrusion layer PL1 and the second protrusion layer PL2 extend.

[0080] According to an embodiment, the partition wall PW can have a structure in which "T" shaped structures are sequentially stacked in the third direction DR3. For example, the first partition wall layer PW1 and the first protrusion layer PL1 can form a first tip structure, and the first partition wall layer PW1 can be more inward than the first protrusion layer PL1, and the second partition wall layer PW2 and the second protrusion layer PL2 can form a second tip structure, and the second partition wall layer PW2 can be more inward than the second protrusion layer PL2. Accordingly, the partition wall PW can have two or more tips in the third direction DR3.

[0081] Since the partition wall PW has the two or more tip structures, the light emitting unit EL can contact at least a portion of a side surface of the first partition wall layer PW1, and can not contact at least a portion of a side surface of the second partition wall layer PW2. When an organic material for forming the light emitting unit EL is deposited, at least a portion of the light emitting unit EL can be separated from each other, and each of the sub-pixels SPX1, SPX2, and SPX3 can be distinguished. For example, the light emitting unit EL can be separated into a first light emitting unit EL1, a second light emitting unit EL2, and a third light emitting unit EL3.

[0082] Since the partition wall PW has two or more top end add-on structures, the second electrode ELT2 can contact at least a portion of the side surface of the first partition wall layer PW1, and can not contact at least a portion of the side surface of the second partition wall layer PW2.

[0083] Each of the first partition wall layer PW1 and the second partition wall layer PW2 can have a quadrangular shape in a cross-sectional view. According to an embodiment, the first partition wall layer PW1 and the second partition wall layer PW2 can include an inclined side surface, and can have a trapezoidal shape in a cross-sectional view. However, the present disclosure is not limited thereto.

[0084] Each of the first partition wall layer PW1 and the second partition wall layer PW2 can include an electrically conductive metal. According to an embodiment, the first partition wall layer PW1 and the second partition wall layer PW2 can include the same material. According to an embodiment, each of the first partition wall layer PW1 and the second partition wall layer PW2 can include at least one of gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and platinum (Pt). For example, the first partition wall layer PW1 and the second partition wall layer PW2 can include molybdenum (Mo).

[0085] According to an embodiment, in a case where the first partition wall layer PW1 includes molybdenum (Mo), a contact resistance with the second electrode ELT2 can be reduced. Experimentally, in a case where the first partition wall layer PW1 includes other metals, an oxide layer can be formed on a surface of the first partition wall layer PW1 more quickly compared to a case where the first partition wall layer PW1 includes molybdenum (Mo), and this can increase an electrical contact resistance with the second electrode ELT2. In the display device DD according to the present disclosure, since the first partition wall layer PW1 includes molybdenum (Mo), in a case where the second electrode ELT2 contacts the side surface of the first partition wall layer PW1, an electrical contact resistance can be reduced.

[0086] In the present disclosure, in a case where a thickness is defined based on a thickness direction (e.g., the third direction DR3) of the base layer BSL, according to an embodiment, the first partition wall layer PW1 can have a thickness in a range of about to about According to an embodiment, the second partition wall layer PW2 can have a thickness in a range of about to about However, the present disclosure is not limited thereto.

[0087] Each of the first protruding layer PL1 and the second protruding layer PL2 can include a multi-layer stacked structure. According to an embodiment, each of the first protruding layer PL1 and the second protruding layer PL2 can include two layers. For example, the first protruding layer PL1 can include a first (1-1) protruding layer PL1_1 and a first (1-2) protruding layer PL1_2 disposed on the first (1-1) protruding layer PL1_1. For example, the second protruding layer PL2 can include a first (2-1) protruding layer PL2_1 and a first (2-2) protruding layer PL2_2 disposed on the first (2-1) protruding layer PL2_1. However, the present disclosure is not necessarily limited thereto. Hereinafter, the present disclosure is described based on a structure in which each of the first protruding layer PL1 and the second protruding layer PL2 has two layers.

[0088] The first (1-1) protruding layer PL1_1 can be disposed on the first partition wall layer PW1. According to an embodiment, the first (1-1) protruding layer PL1_1 can be directly disposed on the first partition wall layer PW1. The first (2-1) protruding layer PL2_1 can be disposed on the second partition wall layer PW2. According to an embodiment, the first (2-1) protruding layer PL2_1 can be directly disposed on the second partition wall layer PW2.

[0089] The first (1-2) protruding layer PL1_2 can be disposed on the first (1-1) protruding layer PL1_1. According to an embodiment, the first (1-2) protruding layer PL1_2 can be directly disposed on the first (1-1) protruding layer PL1_1. The first (2-2) protruding layer PL2_2 can be disposed on the first (2-1) protruding layer PL2_1. According to an embodiment, the first (2-2) protruding layer PL2_2 can be directly disposed on the first (2-1) protruding layer PL2_1.

[0090] According to an embodiment, each of the first (1-1) protruding layer PL1_1 and the first (1-2) protruding layer PL1_2 can have a quadrangular shape in a cross-sectional view. According to an embodiment, the first (1-1) protruding layer PL1_1 and the first (1-2) protruding layer PL1_2 can include an inclined side surface. According to an embodiment, the first (1-1) protruding layer PL1_1 and the first (1-2) protruding layer PL1_2 can have a trapezoidal shape in a cross-sectional view. However, the present disclosure is not limited thereto.

[0091] According to an embodiment, the first (1-1) protruding layer PL1_1 and the first (1-2) protruding layer PL1_2 can have end portions that do not coincide with each other. However, the present disclosure is not limited thereto, and in another embodiment, the first (1-1) protruding layer PL1_1 and the first (1-2) protruding layer PL1_2 can have end portions that coincide with each other.

[0092] According to an embodiment, each of the first (2-1) protruding layer PL2_1 and the second (2-2) protruding layer PL2_2 can have a quadrangular shape in a cross-sectional view. According to an embodiment, the first (2-1) protruding layer PL2_1 and the second (2-2) protruding layer PL2_2 can include an inclined side surface. According to an embodiment, the first (2-1) protruding layer PL2_1 and the second (2-2) protruding layer PL2_2 can have a trapezoidal shape in a cross-sectional view. However, the disclosure is not limited thereto.

[0093] According to an embodiment, the first (2-1) protruding layer PL2_1 and the second (2-2) protruding layer PL2_2 can have end portions that do not coincide with each other. However, the disclosure is not limited thereto, and in another embodiment, the first (2-1) protruding layer PL2_1 and the second (2-2) protruding layer PL2_2 can have end portions that coincide with each other.

[0094] According to an embodiment, the first (1-1) protruding layer PL1_1 and the first (2-1) protruding layer PL2_1 can include an inorganic material. According to an embodiment, the first (1-1) protruding layer PL1_1 and the first (2-1) protruding layer PL2_1 can include the same material. According to an embodiment, the first (1-1) protruding layer PL1_1 and the first (2-1) protruding layer PL2_1 can include at least one of silicon nitride (SiN x ), silicon oxide (SiO x ), and silicon oxynitride (SiO x N y ).

[0095] According to an embodiment, in a case where the first (1-1) protruding layer PL1_1 and the first (2-1) protruding layer PL2_1 include an inorganic material, the first (1-1) protruding layer PL1_1 and the first (2-1) protruding layer PL2_1 can be deposited by a chemical vapor deposition (CVD) process.

[0096] According to an embodiment, the first (1-1) protruding layer PL1_1 and the first (2-1) protruding layer PL2_1 can have the same thickness. According to an embodiment, in a case where the first (1-1) protruding layer PL1_1 and the first (2-1) protruding layer PL2_1 include an inorganic material, each of the first (1-1) protruding layer PL1_1 and the first (2-1) protruding layer PL2_1 can have a thickness in a range of about to about .

[0097] According to an embodiment, the first (1-2) protruding layer PL1_2 and the second (2-2) protruding layer PL2_2 can include at least one of titanium (Ti) and tantalum (Ta). According to an embodiment, the first (1-2) protruding layer PL1_2 and the second (2-2) protruding layer PL2_2 can include the same material.

[0098] According to an embodiment, the (1-2)th protruding layer PL1_2 and the (2-2)th protruding layer PL2_2 can have the same thickness. According to an embodiment, in a case where the (1-2)th protruding layer PL1_2 and the (2-2)th protruding layer PL2_2 include at least one of titanium (Ti) and tantalum (Ta), the (1-2)th protruding layer PL1_2 and the (2-2)th protruding layer PL2_2 can have a thickness in a range of about to about .

[0099] The top end add-on structure of the partition wall PW can include a layer including at least one of titanium (Ti) and tantalum (Ta), and the display device DD according to the disclosure can have a stable partition wall PW structure. Experimentally, in a case where the top end add-on structure of the partition wall PW includes a layer including an inorganic material and having a thin thickness in a range of about to about , the thin layer including the inorganic material can be bent (e.g., warped or broken), and thus, the top end add-on structure can be damaged.

[0100] According to the disclosure, the top end add-on structure of the partition wall PW can be formed such that the layer including at least one of titanium (Ti) and tantalum (Ta) is in contact with the layer including the inorganic material having a thin thickness, and damage to the top end add-on structure can be reduced. For example, the layer including titanium (Ti) and / or tantalum (Ta) can support the layer including the inorganic material having a thin thickness, and can prevent the thin layer including the inorganic material from being bent (e.g., warped or broken).

[0101] In the above, an embodiment in which the (1-1)th protruding layer PL1_1 and the (2-1)th protruding layer PL2_1 can include an inorganic material and the (1-2)th protruding layer PL1_2 and the (2-2)th protruding layer PL2_2 can include at least one of titanium (Ti) and tantalum (Ta) is described, but the disclosure is not limited thereto.

[0102] According to an embodiment, the (1-1)th protruding layer PL1_1 and the (2-1)th protruding layer PL2_1 can include at least one of titanium (Ti) and tantalum (Ta). According to an embodiment, the (1-2)th protruding layer PL1_2 and the (2-2)th protruding layer PL2_2 can include an inorganic material. According to an embodiment, the (1-2)th protruding layer PL1_2 and the (2-2)th protruding layer PL2_2 can include at least one of silicon nitride (SiN x ), silicon oxide (SiO x ), and silicon oxynitride (SiO x N y ).

[0103] The protective layer IL can be disposed on at least a portion of the separation wall PW and the second electrode ELT2. The protective layer IL can cover at least a portion of the separation wall PW and the second electrode ELT2. For example, the protective layer IL can contact a side surface of each of the first protruding layer PL1, the second separation wall layer PW2, and the second protruding layer PL2.

[0104] According to an embodiment, the protective layer IL can contact at least a portion of a lower surface of each of the first (1-1) protruding layer PL1_1 and the second (2-1) protruding layer PL2_1, and at least a portion of an upper surface of each of the first (1-2) protruding layer PL1_2 and the second (2-2) protruding layer PL2_2. Hereinafter, in the disclosure, the "upper" direction can be defined as the third direction DR3, and the "lower" direction can be defined as the direction of gravity, for example, the direction opposite to the third direction DR3.

[0105] In Figure 2 , the protective layer IL is shown to completely cover the upper surface of the second (2-2) protruding layer PL2_2, but the disclosure is not limited thereto. According to an embodiment, at least a portion of the protective layer IL that contacts the upper surface of the second (2-2) protruding layer PL2_2 can be removed, and thus the protective layer IL can expose at least a portion of the upper surface of the second (2-2) protruding layer PL2_2.

[0106] The protective layer IL can include an inorganic material. For example, the protective layer IL can include at least one of silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y ), and aluminum oxide (AlO x ). However, the disclosure is not limited thereto, and the protective layer IL can include another insulating material.

[0107] The protective layer IL and the separation wall PW can be adjacent to each other with sufficient adhesion. In the case where the protective layer IL is not tightly attached to the separation wall PW, the risk of film peeling can occur, and it can be difficult to tightly dispose the protective layer IL.

[0108] In the display device DD according to the embodiment of the present disclosure, since the partition wall PW has two or more tip appendage structures in the third direction DR3, and the tip appendage structure includes a layer including an inorganic material, the partition wall PW can stably contact the protective layer IL. For example, the adhesion between the inorganic layer and the metal layer can be greater than the adhesion between the inorganic layer and the inorganic layer. Thus, due to the material properties between the partition wall PW and the protective layer IL, the partition wall PW and the protective layer IL can be attached to each other closely. Thus, the protective layer IL can stably cover the partition wall PW to stably contact the partition wall PW, and can reduce the risk of external impurities (e.g., moisture) penetrating into the display device DD.

[0109] Hereinafter, referring to Figure 5 , an electrical connection structure between the light emitting element LD and the partition wall PW is described. Figure 5 is a schematic block diagram illustrating an electrical connection structure for a light emitting element according to an embodiment. For example, Figure 5 may illustrate an electrical connection structure including a pixel circuit PXC corresponding to each sub-pixel SPX.

[0110] Referring to Figure 5 , the sub-pixel SPX can include a pixel circuit PXC configured to drive the light emitting element LD.

[0111] The pixel circuit PXC can include one or more circuit elements. For example, the pixel circuit PXC can include a transistor and a storage capacitor. For example, the pixel circuit PXC can include a driving transistor, a switching transistor, and a storage capacitor. However, the present disclosure is not necessarily limited thereto.

[0112] The pixel circuit PXC can be electrically connected to a scan line SL and a data line DL. The scan line SL can supply a scan signal to the pixel circuit PXC, and according to an embodiment, can be electrically connected to a gate electrode of a switching transistor of the pixel circuit PXC. The light emitting element LD can be configured to emit light corresponding to a data signal supplied from the data line DL.

[0113] The pixel circuit PXC can be electrically connected to a first power line PLL1 and a second power line PLL2. For example, a first electrode ELT1 of the light emitting element LD can be electrically connected to the pixel circuit PXC and the first power line PLL1, and a second electrode ELT2 of the light emitting element LD can be electrically connected to the second power line PLL2. According to an embodiment, the second power line PLL2 can be formed in the pixel circuit layer PCL in the display area DA. In another embodiment, the second power line PLL2 can be disposed in the non-display area NDA. Thus, the second power line PLL2 can be configured to supply a second power to the light emitting element LD.

[0114] The power of the first power line PLL1 and the power of the second power line PLL2 can have different potentials. For example, the power of the first power line PLL1 can be high-potential pixel power that receives power from a first voltage potential VDD, and the power of the second power line PLL2 can be low-potential pixel power that receives power from a second voltage potential VSS. The potential difference between the power of the first power line PLL1 and the power of the second power line PLL2 can be set to be equal to or greater than the threshold voltage of the light emitting element LD.

[0115] The first power line PLL1 can be electrically connected to the pixel circuit PXC (e.g., a drive transistor). The second power line PLL2 can be electrically connected to the cathode electrode (e.g., the second electrode ELT2) of the light emitting element LD.

[0116] According to an embodiment, the second power line PLL2 can be electrically connected to the second electrode ELT2 through the partition wall PW. For example, the partition wall PW can electrically connect the second electrode ELT2 and the second power line PLL2.

[0117] Each light emitting element LD can be connected in a forward direction between the first power line PLL1 and the second power line PLL2 to form each effective light source. The effective light sources can be gathered together to form the light emitting elements LD of the sub-pixel SPX.

[0118] The light emitting element LD can emit light having a luminance corresponding to a driving current provided through the pixel circuit PXC. During each frame period, the pixel circuit PXC can provide the light emitting element LD with a driving current corresponding to a data signal. The light emitting element LD can emit light having a luminance corresponding to the current flowing in the light emitting element LD.

[0119] Hereinafter, with reference to Figures 6 to 13 , a method of manufacturing a display device DD is described.

[0120] Figure 6 is a schematic flowchart illustrating a method of manufacturing a display device according to an embodiment. Figures 7 to 13 is a schematic cross-sectional view illustrating each process step of a method of manufacturing a display device according to an embodiment.

[0121] With reference to Figure 6 , the method of manufacturing a display device DD can include forming a first electrode (S100), forming a partition wall (S200), forming a light emitting unit (S300), forming a second electrode (S400), and forming a protective layer (S500).

[0122] With reference to Figure 7 , when the first electrode (S100) is formed, the first electrode ELT1 can be patterned on the base layer BSL (or the pixel circuit layer PCL).

[0123] Before patterning the first electrode ELT1, a pixel circuit layer PCL including a pixel circuit PXC for driving a light emitting element LD can be formed (e.g., patterned) on the base layer BSL. The pixel circuit layer PCL can be formed (e.g., patterned) to include a conductive layer and an insulating layer disposed between the conductive layer.

[0124] According to an embodiment, the configuration disposed on the base layer BSL can be formed (e.g., patterned) by using a general patterning process (e.g., a photolithography process, etc.) of a mask.

[0125] In forming the first electrode (S100), the first electrode ELT1 can be formed (e.g., patterned) on the pixel circuit layer PCL (or the base layer BSL). According to an embodiment, the first electrode ELT1 can be deposited on the pixel circuit layer PCL and can be etched to expose at least a portion of the pixel circuit layer PCL.

[0126] In the disclosure, unless otherwise specified for a deposition process for forming (e.g., patterning) a configuration of the display device DD, as a process for depositing a configuration of the display device DD, one or more of a chemical vapor deposition (CVD) process and an atomic layer deposition (ALD) process can be used. In the disclosure, unless otherwise specified for an etching process for forming (e.g., patterning) a configuration of the display device DD, as an etching process, one or more of a wet etching and a dry etching can be used. However, the disclosure is not limited to the specific examples.

[0127] Although not shown in the drawings, according to an embodiment, after forming (e.g., patterning) the first electrode ELT1, the first electrode ELT1 can be electrically connected to a driving transistor through a hole passing through a protection layer in the pixel circuit layer PCL.

[0128] According to an embodiment, after forming the first electrode ELT1, a process of patterning (or forming) the pixel defining layer PDL can be further performed. According to an embodiment, the pixel defining layer PDL can be deposited on the first electrode ELT1 and etched to expose at least a portion of the first electrode ELT1.

[0129] Reference Figure 8 In forming the separation wall (S200), the first base separation wall layer B_PW1, the first base protrusion layer B_PL1, the second base separation wall layer B_PW2, and the second base protrusion layer B_PL2 can be deposited on the first electrode ELT1 (or the base layer BSL).

[0130] In the disclosure, the first base separation wall layer B_PW1, the first base protrusion layer B_PL1, the second base separation wall layer B_PW2, and the second base protrusion layer B_PL2 can be layers deposited on the first electrode ELT1 (or the base layer BSL) before performing an etching process, as layers for forming the first separation wall layer PW1, the first protrusion layer PL1, the second separation wall layer PW2, and the second protrusion layer PL2, respectively.

[0131] Upon depositing the first base separation wall layer B_PW1, the first base separation wall layer B_PW1 can be deposited on the first electrode ELT1. According to an embodiment, the first base separation wall layer B_PW1 can be deposited directly on the first electrode ELT1.

[0132] According to an embodiment, the first base separation wall layer B_PW1 can include an electrically conductive metal. According to an embodiment, the first base separation wall layer B_PW1 can include at least one of gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and platinum (Pt). For example, the first base separation wall layer B_PW1 can include molybdenum (Mo).

[0133] According to an embodiment, the first base separation wall layer B_PW1 can be deposited by a sputtering process.

[0134] According to an embodiment, the first base separation wall layer B_PW1 can be deposited to have a thickness in a range of about 1 nm to about 10 nm. to about 10 nm. to about 10 nm.

[0135] Upon depositing the first base separation wall layer B_PW1, a process of depositing the first base protrusion layer B_PL1 can be performed. Depositing the first base protrusion layer B_PL1 can include depositing a first (1-1) base protrusion layer B_11 and depositing a first (1-2) base protrusion layer B_12.

[0136] The first base protrusion layer B_PL1 can be deposited on the first base separation wall layer B_PW1. According to an embodiment, the first base protrusion layer B_PL1 can be deposited directly on the first base separation wall layer B_PW1.

[0137] The first (1-1) base protrusion layer B_11 can be deposited on the first base separation wall layer B_PW1. According to an embodiment, the first (1-1) base protrusion layer B_11 can be deposited directly on the first base separation wall layer B_PW1.

[0138] The (1-2) base protrusion layer B_12 can be deposited on the (1-1) base protrusion layer B_11. According to embodiments, the (1-2) base protrusion layer B_12 can be deposited directly on the (1-1) base protrusion layer B_11.

[0139] According to embodiments, the (1-1) base protrusion layer B_11 can include an inorganic material, and the (1-2) base protrusion layer B_12 can include at least one of titanium (Ti) and tantalum (Ta). According to embodiments, the (1-1) base protrusion layer B_11 can include at least one of silicon nitride (SiN x ), silicon oxide (SiO x ), and silicon oxynitride (SiO x N y ). However, the disclosure is not limited thereto. According to embodiments, the (1-2) base protrusion layer B_12 can include a metal having etching selectivity with respect to the first partition wall layer PW1 during the etching process.

[0140] According to embodiments, the (1-1) base protrusion layer B_11 can include at least one of titanium (Ti) and tantalum (Ta), and the (1-2) base protrusion layer B_12 can include an inorganic material. According to embodiments, the (1-2) base protrusion layer B_12 can include at least one of silicon nitride (SiN x ), silicon oxide (SiO x ), and silicon oxynitride (SiO x N y ). However, the disclosure is not limited thereto. According to embodiments, the (1-1) base protrusion layer B_11 can include a metal having etching selectivity with respect to the first partition wall layer PW1 during the etching process.

[0141] According to embodiments, in the case where the (1-1) base protrusion layer B_11 includes an inorganic material, the (1-1) base protrusion layer B_11 can be deposited by a CVD process. According to embodiments, in the case where the (1-2) base protrusion layer B_12 includes at least one of titanium (Ti) and tantalum (Ta), the (1-2) base protrusion layer B_12 can be deposited by a sputtering process.

[0142] According to embodiments, in the case where the (1-1) base protrusion layer B_11 includes at least one of titanium (Ti) and tantalum (Ta), the (1-1) base protrusion layer B_11 can be deposited by a sputtering process. According to embodiments, in the case where the (1-2) base protrusion layer B_12 includes an inorganic material, the (1-2) base protrusion layer B_12 can be deposited by a CVD process.

[0143] According to embodiments, in a case where the first (1-1) base protruding layer B_11 includes an inorganic material, the first (1-1) base protruding layer B_11 can be deposited to have a thickness in a range of about to about According to embodiments, in a case where the first (1-2) base protruding layer B_12 includes at least one of titanium (Ti) and tantalum (Ta), the first (1-2) base protruding layer B_12 can be deposited to have a thickness in a range of about to about

[0144] According to embodiments, in a case where the first (1-1) base protruding layer B_11 includes at least one of titanium (Ti) and tantalum (Ta), the first (1-1) base protruding layer B_11 can be deposited to have a thickness in a range of about to about According to embodiments, in a case where the first (1-2) base protruding layer B_12 includes an inorganic material, the first (1-2) base protruding layer B_12 can be deposited to have a thickness in a range of about to about

[0145] After depositing the first base protruding layer B_PL1, a process of depositing a second base partition wall layer B_PW2 can be performed. The second base partition wall layer B_PW2 can be deposited on the first base protruding layer B_PL1 while depositing the second base partition wall layer B_PW2. According to embodiments, the second base partition wall layer B_PW2 can be directly deposited on the first base protruding layer B_PL1.

[0146] According to embodiments, the second base partition wall layer B_PW2 can include an electrically conductive metal. According to embodiments, the second base partition wall layer B_PW2 and the first base partition wall layer B_PW1 can include the same material. According to embodiments, the second base partition wall layer B_PW2 can include molybdenum (Mo).

[0147] According to embodiments, the second base partition wall layer B_PW2 can be deposited by a sputtering process.

[0148] According to embodiments, the second base partition wall layer B_PW2 can be deposited to have a thickness in a range of about to about

[0149] After depositing the second base partition wall layer B_PW2, a process of depositing a second base protruding layer B_PL2 can be performed. Depositing the second base protruding layer B_PL2 can include depositing a second (2-1) base protruding layer B_21 and depositing a second (2-2) base protruding layer B_22. ​​​

[0150] A second base protrusion layer B_PL2 can be deposited on the second base partition wall layer B_PW2. According to an embodiment, the second base protrusion layer B_PL2 can be deposited directly on the second base partition wall layer B_PW2.

[0151] A (2-1) base protrusion layer B_21 can be deposited on the second base partition wall layer B_PW2. According to an embodiment, the (2-1) base protrusion layer B_21 can be deposited directly on the second base partition wall layer B_PW2.

[0152] A (2-2) base protrusion layer B_22 can be deposited on the (2-1) base protrusion layer B_21. According to an embodiment, the (2-2) base protrusion layer B_22 can be deposited directly on the (2-1) base protrusion layer B_21.

[0153] According to an embodiment, the (2-1) base protrusion layer B_21 can include an inorganic material, and the (2-2) base protrusion layer B_22 can include at least one of titanium (Ti) and tantalum (Ta). According to an embodiment, the (2-1) base protrusion layer B_21 can include at least one of silicon nitride (SiN x ), silicon oxide (SiO x ), and silicon oxynitride (SiO x N y ). However, the disclosure is not limited thereto. According to an embodiment, the (2-2) base protrusion layer B_22 can include a metal having etching selectivity with respect to the second partition wall layer PW2 during the etching process.

[0154] According to an embodiment, the (2-1) base protrusion layer B_21 can include at least one of titanium (Ti) and tantalum (Ta), and the (2-2) base protrusion layer B_22 can include an inorganic material. According to an embodiment, the (2-2) base protrusion layer B_22 can include at least one of silicon nitride (SiN x ), silicon oxide (SiO x ), and silicon oxynitride (SiO x N y ). However, the disclosure is not limited thereto. According to an embodiment, the (2-1) base protrusion layer B_21 can include a metal having etching selectivity with respect to the second partition wall layer PW2 during the etching process.

[0155] According to embodiments, in the case where the first (2-1) base protruding layer B_21 includes an inorganic material, the first (2-1) base protruding layer B_21 can be deposited by a CVD process. According to embodiments, in the case where the first (2-2) base protruding layer B_22 includes at least one of titanium (Ti) and tantalum (Ta), the first (2-2) base protruding layer B_22 can be deposited by a sputtering process.

[0156] According to embodiments, in the case where the first (2-1) base protruding layer B_21 includes at least one of titanium (Ti) and tantalum (Ta), the first (2-1) base protruding layer B_21 can be deposited to have a thickness in a range of about

[0157] The first (2-1) base protruding layer B_21 and the first (1-1) base protruding layer B_11 can be deposited to have the same thickness. According to embodiments, in the case where the first (2-1) base protruding layer B_21 includes an inorganic material, the first (2-1) base protruding layer B_21 can be deposited to have a thickness in a range of about to about The first (2-2) base protruding layer B_22 and the first (1-2) base protruding layer B_12 can be deposited to have the same thickness. According to embodiments, in the case where the first (2-2) base protruding layer B_22 includes at least one of titanium (Ti) and tantalum (Ta), the first (2-2) base protruding layer B_22 can be deposited to have a thickness in a range of about to about

[0158] According to embodiments, in the case where the first (2-1) base protruding layer B_21 includes at least one of titanium (Ti) and tantalum (Ta), the first (2-1) base protruding layer B_21 can be deposited to have a thickness in a range of about to about According to embodiments, in the case where the first (2-2) base protruding layer B_22 includes an inorganic material, the first (2-2) base protruding layer B_22 can be deposited to have a thickness in a range of about to about

[0159] After depositing the first base partition wall layer B_PW1, the first base protruding layer B_PL1, the second base partition wall layer B_PW2, and the second base protruding layer B_PL2, a photoresist PR can be disposed on the second base protruding layer B_PL2. For example, the photoresist PR can be disposed directly on the first (2-2) base protruding layer B_22. ​​

[0160] The photoresist PR can not overlap at least a portion of the first electrode ELT1 in a plan view. The photoresist PR can overlap the pixel definition layer PDL in a plan view.

[0161] Reference Figure 9 The first base division wall layer B_PW1, the first base protrusion layer B_PL1, the second base division wall layer B_PW2, and the second base protrusion layer B_PL2 can be etched. The first base division wall layer B_PW1, the first base protrusion layer B_PL1, the second base division wall layer B_PW2, and the second base protrusion layer B_PL2 can be batch-etched. In the display device DD according to the disclosure, since the first base division wall layer B_PW1, the first base protrusion layer B_PL1, the second base division wall layer B_PW2, and the second base protrusion layer B_PL2 are deposited and etched in batches, an additional mask other than the photoresist PR can not be needed, and a process can be simplified.

[0162] According to an embodiment, the first base division wall layer B_PW1, the first base protrusion layer B_PL1, the second base division wall layer B_PW2, and the second base protrusion layer B_PL2 that do not overlap the photoresist PR in a plan view can be etched. Etching the first base division wall layer B_PW1, the first base protrusion layer B_PL1, the second base division wall layer B_PW2, and the second base protrusion layer B_PL2 can include forming the first intermediate division wall layer M_PW1, the first protrusion layer PL1, the second intermediate division wall layer M_PW2, and the second protrusion layer PL2, respectively, by etching the first base division wall layer B_PW1, the first base protrusion layer B_PL1, the second base division wall layer B_PW2, and the second base protrusion layer B_PL2.

[0163] In the disclosure, the first intermediate division wall layer M_PW1 and the second intermediate division wall layer M_PW2 can be layers formed from the first base division wall layer B_PW1 and the second base division wall layer B_PW2 by a single etching process.

[0164] The first base division wall layer B_PW1, the first base protrusion layer B_PL1, the second base division wall layer B_PW2, and the second base protrusion layer B_PL2 can be etched to have a quadrangular shape in a cross-sectional view. According to an embodiment, the first intermediate division wall layer M_PW1, the first protrusion layer PL1, the second intermediate division wall layer M_PW2, and the second protrusion layer PL2 can include inclined side surfaces and can have a trapezoidal shape in a cross-sectional view. However, the disclosure is not limited thereto.

[0165] Reference Figure 10The etching of the first base separation wall layer B_PW1, the first base protruding layer B_PL1, the second base separation wall layer B_PW2, and the second base protruding layer B_PL2 can further include etching the first intermediate separation wall layer M_PW1 and the second intermediate separation wall layer M_PW2. The first intermediate separation wall layer M_PW1 and the second intermediate separation wall layer M_PW2 can be etched to form the first separation wall layer PW1 and the second separation wall layer PW2, respectively. The first intermediate separation wall layer M_PW1 and the second intermediate separation wall layer M_PW2 can be dry etched.

[0166] According to embodiments, in cases where the first base separation wall layer B_PW1 and the second base separation wall layer B_PW2 include molybdenum (Mo), the first base separation wall layer B_PW1 and the second base separation wall layer B_PW2 can be easily dry etched isotropically.

[0167] The first intermediate separation wall layer M_PW1 and the second intermediate separation wall layer M_PW2 can be further etched inwardly than the first protruding layer PL1 and the second protruding layer PL2. The first separation wall layer PW1 can have an end portion that does not coincide with an end portion of the first protruding layer PL1 in a plan view. The end portion of the first separation wall layer PW1 and the end portion of the first protruding layer PL1 can not overlap in the plan view. The second separation wall layer PW2 can have an end portion that does not coincide with an end portion of the second protruding layer PL2 in a plan view. The end portion of the second separation wall layer PW2 and the end portion of the second protruding layer PL2 can not overlap in the plan view.

[0168] After the first intermediate separation wall layer M_PW1 and the second intermediate separation wall layer M_PW2 are further etched to form the first separation wall layer PW1 and the second separation wall layer PW2, the photoresist PR can be removed.

[0169] Referring to Figure 11 When the light emitting unit is formed (S400), the light emitting unit EL can be formed on the first electrode ELT1. The light emitting unit EL can be formed (e.g., patterned) to be disposed adjacent to the separation wall PW in a direction in which the base layer BSL is disposed. The light emitting unit EL can be deposited to contact at least a portion of a side surface of the first separation wall layer PW1. The light emitting unit EL can expose a remaining portion of the side surface of the first separation wall layer PW1. According to embodiments, the light emitting unit EL can not contact the second separation wall layer PW2.

[0170] Referring to Figure 12 When the second electrode is formed (S500), the second electrode ELT2 can be formed on the light emitting unit EL. The second electrode ELT2 can contact the remaining portion of the side surface of the first separation wall layer PW1. According to embodiments, the second electrode ELT2 can not contact the second separation wall layer PW2.

[0171] Reference is made to Figure 13 When the protective layer IL is formed (S600), the protective layer IL can be formed on at least a portion of the separation wall PW and the second electrode ELT2. The protective layer IL can be deposited to cover at least a portion of the separation wall PW and the second electrode ELT2.

[0172] According to an embodiment, the protective layer IL can contact at least a portion of a side surface of the second separation wall layer PW2, a lower surface of each of the first (1-1) protruding layer PL1_1 and the first (2-1) protruding layer PL2_1, and an upper surface of each of the first (1-2) protruding layer PL1_2 and the second (2-2) protruding layer PL2_2.

[0173] The protective layer IL can include an inorganic material. For example, the protective layer IL can include at least one of silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y ), and aluminum oxide (AlO x ). However, the disclosure is not limited thereto, and the protective layer IL can include another insulating material.

[0174] Hereinafter, a display system DS to which the display apparatus DD can be applied will be described with reference to Figures 14 to 16

[0175] Figure 14 is a schematic block diagram of a display system according to an embodiment. Figure 15 and Figure 16 are schematic perspective views showing application examples of the display system of Figure 14

[0176] Referring to Figure 14 , the display system DS can include a processor 1100 and one or more display apparatuses 1210 and 1220.

[0177] The processor 1100 can perform various tasks and calculations. In an embodiment, the processor 1100 can include an application processor, a graphic processor, a microprocessor, a central processing unit (CPU), etc. The processor 1100 can be connected to other components of the display system DS through a bus system to control the other components of the display system DS.

[0178] In Figure 14 , the display system DS is shown to include a first display apparatus 1210 and a second display apparatus 1220. The processor 1100 can be connected to the first display apparatus 1210 through a first channel CH1 and can be connected to the second display apparatus 1220 through a second channel CH2.

[0179] ​​Through the first channel CH1, the processor 1100 can transmit the first image data IMG1 and the first control signal CTRL1 to the first display device 1210. The first display device 1210 can display an image based on the first image data IMG1 and the first control signal CTRL1. The first display device 1210 can be configured similarly to the display device DD described with reference to Figure 1 The display device DD described with reference to

[0180] Through the second channel CH2, the processor 1100 can transmit the second image data IMG2 and the second control signal CTRL2 to the second display device 1220. The second display device 1220 can display an image based on the second image data IMG2 and the second control signal CTRL2. The second display device 1220 can be configured similarly to the display device DD described with reference to Figure 1 The display device DD described with reference to

[0181] The display system DS can include a computing system that provides an image display function, such as a portable computer, a mobile phone, a smart phone, a tablet personal computer (PC), a smart watch, a watch phone, a portable multimedia player (PMP), a navigation system, and an ultra-mobile personal computer (UMPC). The display system DS can include at least one of a head-mounted display (HMD) device, a virtual reality (VR) device, a mixed reality (MR) device, and an augmented reality (AR) device.

[0182] The display system DS described with reference to Figure 15 Figure 14 The display system DS described with reference to

[0183] The head-mounted display device 2000 can include a head-mounted band 2100 and a display device accommodating case 2200. The head-mounted band 2100 can be connected to the display device accommodating case 2200. The head-mounted band 2100 can include a horizontal band and / or a vertical band for fixing the head-mounted display device 2000 to a user's head. The horizontal band can be configured to surround a side portion of the user's head, and the vertical band can be configured to surround an upper portion of the user's head. However, the present disclosure is not limited thereto. For example, the head-mounted band 2100 can be implemented in the form of a spectacle frame, in the form of a helmet, etc.

[0184] The display device accommodating case 2200 can accommodate Figure 14 the first display device 1210 and the second display device 1220 described with reference to Figure 14 the processor 1100 described with reference to

[0185] The display system DS described with reference to Figure 16 Figure 14 ​​The display system DS of the above description can be applied to the smart glasses 1000.

[0186] The smart glasses 1000 can include a frame 111 and a lens unit 112. The smart glasses 1000 can be a wearable electronic device that can be worn on a user's face, and can have a structure in which a part of the frame 111 is foldable. For example, the smart glasses 1000 can be a wearable device for augmented reality. However, the present disclosure is not limited thereto.

[0187] The frame 111 can include a housing 111b supporting the lens unit 112 and a leg unit 111a for being worn by a user. The leg unit 111a can be connected to the housing 111b through a foldable hinge.

[0188] A battery, a touchpad, a microphone, a camera, and the like can be embedded in the frame 111. A projector for outputting light, a processor for controlling a light signal, and the like can be embedded in the frame 111.

[0189] The lens unit 112 can be an optical member that transmits or reflects light. The lens unit 112 can include glass, transparent synthetic resin, and the like.

[0190] The display device DD can be applied to the lens unit 112 of the smart glasses 1000. For example, a user can recognize an image displayed from a light signal transmitted from the projector of the frame 111 through the lens unit 112. For example, a user can recognize information such as time and date displayed on the lens unit 112.

[0191] The above description is an example of the technical features of the present disclosure, and those skilled in the art to which the present disclosure pertains will be able to make various modifications and changes. Therefore, the above-described embodiments of the present disclosure can be implemented alone or in combination with each other.

[0192] Therefore, the embodiments disclosed in the present disclosure are not intended to limit the technical spirit of the present disclosure, but are intended to describe the technical spirit of the present disclosure, and the scope of the technical spirit of the present disclosure is not limited by the embodiments. The scope of protection of the present disclosure should be interpreted by the appended claims, and it should be interpreted that all technical spirits within the equivalent scope are included in the scope of the present disclosure.

Claims

1. A display device, characterized by comprising: Comprising: a separation wall disposed on a base layer; and a light emitting unit disposed adjacent to the separation wall, wherein the separation wall comprises: a first separation wall layer; a second separation wall layer disposed on the first separation wall layer; a first protruding layer disposed between the first separation wall layer and the second separation wall layer; and a second protruding layer disposed on the second separation wall layer, the first protruding layer protrudes above the first separation wall layer in a direction in which a plane of the base layer extends, and the second protruding layer protrudes above the second separation wall layer in the direction.

2. The display device according to claim 1, wherein The first separation wall layer and the second separation wall layer comprise an electrically conductive metal.

3. The display device according to claim 1, wherein The first separation wall layer and the second separation wall layer have inclined side surfaces. 4.The display device of claim 1, wherein the first protruding layer comprises: a first-first protruding layer disposed on the first separation wall layer; and a first-second protruding layer disposed on the first-first protruding layer, and the second protruding layer comprises: a second-first protruding layer disposed on the second separation wall layer; and a second-second protruding layer disposed on the second-first protruding layer. 5.The display device of claim 4, wherein the first-first protruding layer and the second-first protruding layer comprise at least one of silicon nitride, silicon oxide, and silicon oxynitride, and the first-second protruding layer and the second-second protruding layer comprise at least one of titanium and tantalum. 6.The display device of claim 4, wherein the first-second protruding layer and the second-second protruding layer comprise at least one of silicon nitride, silicon oxide, and silicon oxynitride, and the first-first protruding layer and the second-first protruding layer comprise at least one of titanium and tantalum. 7.The display device of claim 5, wherein The first-first protruding layer and the second-first protruding layer have a thickness in the range of to and The first-second protruding layer and the second-second protruding layer have a thickness in the range of to . 8.The display device of claim 6, wherein The first-second protruding layer and the second-second protruding layer have a thickness in the range of to and The first-first protruding layer and the second-first protruding layer have a thickness in the range of to .

9. The display device according to claim 4, wherein further comprising: a protective layer covering at least a portion of the separation wall, wherein the protective layer contacts at least a portion of a lower surface of each of the first-first protruding layer and the second-first protruding layer and at least a portion of an upper surface of each of the first-second protruding layer and the second-second protruding layer.

10. The display device according to claim 4, wherein further comprising: a first electrode and a second electrode disposed on the base layer, wherein the light emitting unit is disposed on the first electrode, the second electrode is disposed on the light emitting unit, and the second electrode contacts a side surface of the first separation wall layer and does not contact a side surface of the second separation wall layer.

11. A display system characterized by, comprising: the display device according to any one of claims 1 to 10, and a processor that transmits image data to the display device.

Images