Wafer detection device

Abstract

The utility model provides a wafer detection device, which is positioned above a wafer to be detected and comprises a light source, a diaphragm, a convergent mirror and a semi-reflecting and semi-transmitting mirror which are horizontally arranged in sequence, the microscope objective is located below the semi-reflecting and semi-transmitting mirror and located above the wafer to be detected, and the imaging assembly is located above the semi-reflecting and semi-transmitting mirror. The light source is limited by the diaphragm, collimated by the convergent mirror and turned by the semi-reflecting and semi-transmitting mirror to illuminate the wafer to be detected through the microscope objective, and light reflected by the wafer to be detected is imaged through the microscope objective, the semi-reflecting and semi-transmitting mirror and the imaging assembly.

Description

TECHNICAL FIELD

[0001] The utility model relates to wafer detection field especially relates to wafer bonding alignment detection device. BACKGROUND

[0002] The existing wafer bonding alignment detection technology usually adopts the transmission illumination method, which leads to the fact that when the back of the wafer is plated with the infrared impermeable film layer, it cannot be detected, and the conventional reflection illumination mode, due to the strong reflection of the first surface of the wafer, leads to the poor imaging contrast, which affects the detection precision.

[0003] In addition, due to the machining error of the existing wafer bonding alignment detection device, the optical axis cannot be completely perpendicular to the wafer. UTILITY MODEL CONTENT

[0004] In order to overcome the problem of the transmission illumination mode that the wafer back plated with the infrared impermeable film cannot be detected and the conventional reflection imaging contrast is poor, the utility model provides a wafer detection device, which adopts the reflection imaging for detection, and the diaphragm is arranged in front of the infrared point light source, and the light is imaged after passing through the converging lens and the half mirror. The setting of the diaphragm can intercept most of the light not focused on the bonding surface, remove the stray light, reduce the reflected light on the upper surface of the wafer to be detected, and improve the imaging contrast. In addition, the wafer detection device of the utility model can also solve the problem that the optical axis cannot be completely perpendicular to the wafer due to the machining error.

[0005] The utility model provides a kind of wafer detection device, the wafer detection device is located above the wafer to be detected, and the wafer detection device includes:

[0006] Horizontally arranged light source, diaphragm, converging lens, half mirror in turn;And

[0007] Microscope located below the half mirror and above the wafer to be detected, and imaging assembly located above the half mirror;

[0008] The light source is limited by the diaphragm, collimated by the converging lens, turned down by the half mirror to illuminate the wafer to be detected by the microscope, and the light reflected by the wafer to be detected is imaged by the microscope, the half mirror and the imaging assembly.

[0009] In one embodiment, the half mirror includes:

[0010] Half mirror body;And

[0011] Angle adjusting device located on the half mirror body.

[0012] In one embodiment, the angle adjustment device comprises a first adjustment tilt knob to adjust the pitch angle of the half mirror and a second adjustment tilt knob to adjust the pitch angle of the half mirror.

[0013] In one embodiment, the first adjustment tilt knob and the second adjustment tilt knob are each independently adjusted.

[0014] In one embodiment, the diaphragm comprises:

[0015] a diaphragm body; and

[0016] a position adjustment device on the diaphragm body to adjust the center position of the diaphragm.

[0017] In one embodiment, the position adjustment device comprises:

[0018] a horizontal adjustment knob; and

[0019] a vertical adjustment knob.

[0020] In one embodiment, the horizontal adjustment knob adjusts the horizontal direction position of the diaphragm.

[0021] In one embodiment, the vertical adjustment knob adjusts the vertical direction position of the diaphragm.

[0022] In one embodiment, the light source comprises an infrared point light source.

[0023] In one embodiment, the back surface of the wafer to be measured is coated with an infrared impermeable film layer.

[0024] The wafer detection device of the utility model adopts reflection imaging for detection, compared with the prior art of adopting transmission illumination method, the reflection imaging detection of the utility model can detect the wafer coated with infrared impermeable film layer on the back surface. In addition, the wafer detection device of the utility model is provided with a diaphragm in front of the infrared point light source, light is imaged after passing through the converging lens and the half mirror, the setting of the diaphragm can intercept most of the light not focused on the bonding surface, remove the stray light, reduce the reflected light on the upper surface of the wafer to be measured, and improve the imaging contrast.

[0025] In addition, the wafer detection device of the utility model is provided with an angle adjustment device on the half mirror to adjust the pitch angle of the half mirror, and is provided with a position adjustment device on the diaphragm to adjust the center position of the diaphragm. The angle adjustment device of the half mirror and the position adjustment device of the diaphragm can be adjusted together or independently to ensure the perpendicularity of the optical axis and the wafer, and solve the problem that the optical axis cannot be completely perpendicular to the wafer due to machining error. BRIEF DESCRIPTION OF DRAWINGS

[0026] The above utility model content and the following specific implementation mode will be better understood when reading in conjunction with the drawings. It needs to be explained that the drawings are only as examples of the claimed utility model. In the drawings, the same reference signs represent the same or similar elements.

[0027] Figure 1 A wafer detection device according to an embodiment of the utility model is shown;

[0028] Figure 2 An angle adjusting device of a half-mirror according to an embodiment of the utility model is shown;

[0029] Figure 3 A position adjusting device of a diaphragm according to an embodiment of the utility model is shown. DETAILED DESCRIPTION

[0030] The detailed features and advantages of the utility model will be described in detail in the specific implementation mode below, and the contents are sufficient to enable any person skilled in the art to understand the technical content of the utility model and implement it, and according to the description, claims and drawings disclosed in the specification, a person skilled in the art can easily understand the related purposes and advantages of the utility model. Although the description of the utility model will be introduced together with the preferred embodiment, this does not mean that the features of the utility model are limited to this implementation mode. On the contrary, the purpose of introducing the utility model in combination with the implementation mode is to cover other options or modifications that may be extended based on the claims of the utility model. In order to provide a deep understanding of the utility model, many specific details will be included in the following description. The utility model can also be implemented without using these details. In addition, in order to avoid confusion or obscure the focus of the utility model, some specific details will be omitted in the description.

[0031] In the description of the utility model, it needs to be explained that, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, or the communication inside two elements. For ordinary skilled in the art, the specific meaning of the above terms in the utility model can be understood according to the specific circumstances.

[0032] In addition, in the following description, "up", "down", "left", "right", "top", "bottom", "horizontal", "vertical" should be understood as the orientation shown in the paragraph and the related drawings. This relative term is only for the convenience of description, and it does not mean that the device described should be manufactured or operated in a particular orientation, so it should not be understood as a limitation of the utility model.

[0033] It is to be understood that, although the terms "first", "second", "third", and the like can be used herein to describe various elements, channels, components, regions, layers and / or sections, these elements, channels, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, channel, component, region, layer or section from another element, channel, component, region, layer or section. Also, the terms "first", "second", "third", and the like are merely used to describe different elements, channels, components, regions, layers and / or sections, and do not imply relative importance of the elements, channels, components, regions, layers and / or sections.

[0034] As used in this application and the claims, the terms "comprises", "comprising", "includes", "including" or the like are not intended to exclude a combination of e.g. elements, components, steps, and / or the like that can be recited in the specification. Stated in other words, these terms do not, without further qualification, also mean "consisting essentially of" and / or "consisting of".

[0035] Some embodiments use numerical values in describing the quantity of ingredients, attributes, etc. It should be understood that such numerical values used in describing the embodiments can in some examples be modified by the adjectives "about", "approximately", or "substantially" in some examples. Unless otherwise stated, "about", "approximately", or "substantially" mean that the stated numerical value allows for ±20% variation. Accordingly, numerical values used in the specification and claims of some embodiments are approximations that can vary depending upon the desired properties sought to be obtained by the individual embodiment. In some embodiments, numerical values are determined without considering significant digits before or after the decimal point. In some embodiments, numerical values are rounded off to the nearest significant digit specified.

[0036] Also, the use of certain words or terms in various places in the specification is merely intended to add clarity and under no circumstances should be understood to limit the scope of the application. Also, certain words or terms that indicate functionality are used to help describe the application. However, it is conservatively noted that such terms should not be construed to specify essential features of the application or to imply that the application requires more features than are explicitly recited in the claims.

[0037] The existing wafer bonding alignment detection technology usually adopts a transmission illumination method, which results in that when the back surface of the wafer is plated with an infrared impermeable film layer, the detection cannot be performed. The conventional reflection illumination method has strong reflection of the first surface of the wafer, which results in poor imaging contrast and affects the detection precision.

[0038] In order to overcome the defects of the prior art, the utility model provides a wafer detection device. This wafer detection device adopts reflection imaging to detect, and a diaphragm is arranged in front of an infrared point light source, and light is imaged after passing through a converging lens and a half mirror. The diaphragm can intercept most light that is not focused on the bonding surface, remove stray light, reduce the reflected light on the upper surface of the wafer to be detected, and improve the imaging contrast.

[0039] Figure 1 A wafer detection device according to an embodiment of the utility model is shown. The utility model adopts reflection imaging to detect, and a diaphragm is arranged in front of an infrared point light source, and light is imaged after passing through a converging lens and a half mirror.

[0040] The wafer detection device of the utility model is located above a wafer to be detected 107 and is used for detecting the wafer to be detected 107.

[0041] The wafer detection device of the utility model comprises:

[0042] A light source 101, a diaphragm 102, a converging lens 103 and a half mirror 104 are arranged horizontally and sequentially.

[0043] A microscopic objective lens 105 is located below the half mirror 104 and above the wafer to be detected 107, and an imaging assembly 106 is located above the half mirror 104.

[0044] The light source 101 is used for providing a detection light beam.

[0045] In an embodiment, the light source 101 is an infrared point light source.

[0046] The diaphragm 102 is used for limiting the light beam. The diaphragm 102 intercepts most light that is not focused on the bonding surface, removes stray light, reduces the reflected light on the upper surface of the wafer to be detected 107, and improves the imaging contrast.

[0047] The converging lens 103 is used for collimating divergent light.

[0048] The half mirror 104 is used for reflecting light from the converging lens to the microscopic objective lens 105 and transmitting light reflected from the wafer to be detected 107 to the imaging assembly 106.

[0049] The microscopic objective lens 105 is used for observing and magnifying the wafer to be detected 107.

[0050] The imaging assembly 106 is used for imaging the observed wafer to be detected 107.

[0051] The infrared point light source 101 is limited by the diaphragm 102, collimated by the converging lens 103, turned downward by the half mirror 104, and then illuminates and observes the wafer to be measured 107 through the microscope objective 105, and the light is imaged through the microscope objective 105, the half mirror 104 and the imaging assembly 106.

[0052] In one embodiment, the back of the wafer to be measured is coated with an infrared impermeable film layer.

[0053] The wafer detection device of the utility model adopts reflection imaging for detection, compared with the prior art of adopting transmission illumination method, the reflection imaging detection of the utility model can detect the wafer coated with an infrared impermeable film layer on the back.

[0054] Figure 2 The angle adjusting device of the half mirror is shown.

[0055] The half mirror includes a half mirror body and an angle adjusting device on the half mirror body.

[0056] The angle adjusting device is used for adjusting the pitch angle of the half mirror.

[0057] As shown in Figure 2 The angle adjusting device includes a first adjusting inclination knob 201 and a second adjusting inclination knob 202.

[0058] In one embodiment, the first adjusting inclination knob 201 and the second adjusting inclination knob 202 can be independently adjusted to adjust the half mirror body to the required pitch angle.

[0059] Figure 3 The position adjusting device of the diaphragm is shown.

[0060] The diaphragm includes a diaphragm body and a position adjusting device on the diaphragm.

[0061] The position adjusting device is used for adjusting the center position of the diaphragm.

[0062] As shown in Figure 3 The position adjusting device includes a horizontal adjusting knob 301 and a vertical adjusting knob 302.

[0063] The horizontal adjusting knob is used for adjusting the horizontal direction (or X direction) position of the diaphragm.

[0064] The vertical adjusting knob is used for adjusting the vertical direction (or Y direction) position of the diaphragm.

[0065] The wafer detection device of the utility model sets angle adjusting device on half reflection half permeation lens, and adjusts pitch angle of half reflection half permeate lens;Position adjusting device is set on diaphragm, and the center position of diaphragm is adjusted.Angle adjusting device of half reflection half permeation lens and position adjusting device of diaphragm can be adjusted together or independently, to ensure that the optical axis is perpendicular to the wafer, solve the problem that the optical axis cannot be completely perpendicular to the wafer due to machining error.

[0066] The terms and expressions used above are only used for description, and the utility model should not be limited to these terms and expressions.Using these terms and expressions does not mean excluding any equivalent features of the description (or part thereof), and it should be recognized that various modifications that can exist should also be included in the scope of claims.Other modifications, changes and replacements can also exist.Correspondingly, the claims should be considered to cover all these equivalents.

[0067] Similarly, it should be noted that, in order to simplify the description of the present application and to help the understanding of one or more embodiments of the utility model, in the foregoing description of the embodiments of the present application, various features are sometimes combined into one embodiment, figure or description thereof.However, this disclosure method does not mean that the features required by the present application are more than the features mentioned in the claims.

[0068] Similarly, it should be noted that, in order to simplify the description of the present application and to help the understanding of one or more embodiments of the utility model, in the foregoing description of the embodiments of the present application, various features are sometimes combined into one embodiment, figure or description thereof.However, this disclosure method does not mean that the features required by the present application are more than the features mentioned in the claims.

Claims

1. A wafer inspection device, characterized in that, The wafer inspection device is located above the wafer to be inspected, and the wafer inspection device includes: A light source, aperture, converging lens, and semi-reflective mirror are arranged horizontally in sequence; and A microscope objective located below the semi-reflective lens and above the wafer under test, and an imaging assembly located above the semi-reflective lens; The light source is limited by the aperture, collimated by the converging lens, and then irradiated downwards by the semi-reflective lens through the microscope objective to illuminate the wafer under test. The light reflected from the wafer under test is imaged by the microscope objective, the semi-reflective lens, and the imaging assembly.

2. The wafer inspection apparatus as described in claim 1, characterized in that, The semi-reflective lens includes: The main body of the semi-reflective mirror; and An angle adjustment device located on the main body of the semi-reflective mirror.

3. The wafer inspection apparatus as described in claim 2, characterized in that, The angle adjustment device includes a first tilt adjustment knob for adjusting the pitch angle of the semi-reflective mirror and a second tilt adjustment knob for adjusting the pitch angle of the semi-reflective mirror.

4. The wafer inspection apparatus as described in claim 3, characterized in that, The first tilt adjustment knob and the second tilt adjustment knob can be adjusted independently.

5. The wafer inspection apparatus as described in claim 1, characterized in that, The aperture includes: The main body of the aperture; and A position adjustment device located on the main body of the aperture adjusts the center position of the aperture.

6. The wafer inspection apparatus as described in claim 5, characterized in that, The position adjustment device includes: Horizontal adjustment knob; and Vertical adjustment knob.

7. The wafer inspection apparatus as described in claim 6, characterized in that, The horizontal adjustment knob adjusts the horizontal position of the aperture.

8. The wafer inspection apparatus as described in claim 6, characterized in that, The vertical adjustment knob adjusts the vertical position of the aperture.

9. The wafer inspection apparatus as described in claim 1, characterized in that, The light source includes an infrared point light source.

10. The wafer inspection apparatus as described in claim 1, characterized in that, The back side of the wafer under test is coated with an infrared-impermeable film.

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