Inverter
By arranging power transistors in the same direction in the inverter and placing heat-generating components on different sides, combined with a customized heat dissipation design, the problem of low yield caused by installation errors was solved, achieving higher heat dissipation efficiency and reliability, and reducing costs.
Patent Information
- Application Number
- CN202423104268.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-16
- Publication Date
- 2025-12-02
- Estimated Expiration
- 2034-12-16
AI Technical Summary
In inverters, the mounting positions of power MOSFETs and SiC diodes are prone to errors, resulting in a low yield rate.
The power transistors are arranged in the same direction, and the first and second heat-generating components with different heat-generating capabilities are placed on different sides. Different types of heat sinks are used for customized heat dissipation. The rectangular heat sink and groove design are combined to improve heat dissipation efficiency and mechanical connection reliability.
It improved the assembly yield of inverters, enhanced heat dissipation efficiency and overall reliability, reduced design and material costs, and extended service life.
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Figure CN223625772U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of power conversion technology, and more particularly to an inverter. Background Technology
[0002] With increasing energy shortages and worsening environmental pollution, clean and renewable energy have become key development areas for countries worldwide. Photovoltaic power generation technology, in particular, is gaining increasing attention and popularity due to its green, environmentally friendly, and renewable advantages. In photovoltaic power generation technology, the inverter, which converts the direct current (DC) power generated by photovoltaic modules into alternating current (AC), is a crucial component.
[0003] In current inverters, SiC (silicon carbide) diodes and power MOSFETs (power field-effect transistors) together form a boost module, responsible for converting and boosting electrical energy. During operation, both power MOSFETs and SiC diodes generate heat, but the amount of heat generated differs. In the same boost module, the number of power MOSFETs is typically higher than the number of SiC diodes.
[0004] In related technologies, power MOSFETs and SiC diodes are arranged alternately to ensure heat balance. However, during assembly, errors can easily occur in the mounting positions of the power MOSFETs and SiC diodes, resulting in a low yield rate for the inverter. Utility Model Content
[0005] This application provides an inverter in which power transistor groups are arranged in the same direction and the first and second heating elements in the power transistor groups are placed on different sides, which can effectively avoid misplacement and thus improve the installation yield of the inverter.
[0006] This application provides an inverter, including a circuit board substrate and devices disposed on the circuit board substrate, the devices including a heat-generating component that generates heat when powered on;
[0007] The heating component includes a first heating element and a second heating element with different heating capacities, and one first heating element and two second heating elements together form a power transistor group;
[0008] The number of power transistor groups is multiple, and the multiple power transistor groups are arranged along a first direction on the circuit board substrate;
[0009] The two second heating elements are located on the same side as the corresponding first heating element, and the first heating element and the second heating element are arranged at intervals.
[0010] By placing the two second heating elements on the same side of the first heating element, the possibility of misjudging the component positions during assembly is reduced, thus improving the assembly yield. By arranging the first and second heating elements at intervals, similar types of components have similar heating characteristics, facilitating the use of identical heat dissipation measures, reducing design costs, and improving heat dissipation efficiency.
[0011] In some embodiments, two second heating elements of the same power transistor group are arranged along a second direction, which intersects with the first direction.
[0012] The above configuration, with its intersecting layout, prevents heat from accumulating in a single direction on the circuit board. By distributing heat-generating components in different directions, heat can be dissipated more evenly, avoiding localized overheating and improving the inverter's thermal management efficiency.
[0013] In some embodiments, a heat dissipation component is further included, wherein the heat dissipation component is located between the heat dissipation component and the circuit board substrate, and the heat dissipation component includes a first heat dissipation element and a second heat dissipation element, wherein the first heat dissipation element and the second heat dissipation element have different thermal conductivity.
[0014] The first heat sink is in thermally conductive contact with the first heat-generating element, and the second heat sink is in thermally conductive contact with the second heat-generating element.
[0015] By using different types of heat sinks, customized heat dissipation capabilities can be provided for different heat-generating components, thereby improving heat dissipation efficiency and preventing overheating. For example, materials with high thermal conductivity can be used for components with high heat dissipation requirements, which can improve heat dissipation efficiency and the overall reliability of the inverter.
[0016] In some embodiments, the first heating element is a silicon carbide diode, and the second heating element is a power MOSFET;
[0017] The thermal conductivity of the first heat sink is less than that of the second heat sink.
[0018] In some embodiments, both the first heat sink and the second heat sink are rectangular in shape;
[0019] The length direction of the first heat sink is the same as the second direction, and the length direction of the second heat sink is the same as the first direction.
[0020] With the above configuration, the rectangular first and second heat sinks can effectively cover the surface of the heat-generating components, providing a good thermal contact area.
[0021] In some embodiments, the heat dissipation assembly further includes a heat dissipation body, the heat dissipation body having a first groove and a second groove spaced apart on the side facing the circuit board substrate, the first heat dissipation element being located in the first groove and the second heat dissipation element being located in the second groove.
[0022] By using the above-mentioned design, the grooves increase the contact area between the heat sink and the heat sink body, thereby improving heat transfer efficiency. In addition, the grooves can also position the heat sink, simplifying the assembly process. By providing grooves to match the heat sinks, it is ensured that each heat sink is securely fixed, preventing the first and second heat sinks from loosening during operation.
[0023] In some embodiments, the first heating element and the second heating element are both welded to the circuit board substrate, and the first heat dissipation element and the second heat dissipation element are both threaded to the circuit board substrate;
[0024] And / or,
[0025] Both sides of the first heat sink and the second heat sink are covered with thermally conductive silicone grease.
[0026] The above setup provides reliable electrical and mechanical connections, ensuring good contact between the heat-generating components and the circuit board substrate, and reducing resistance and signal loss. The first and second heat sinks can be installed or removed as needed, facilitating maintenance and replacement. By applying thermal grease to both sides of the heat sinks, heat distribution is more uniform, reducing the possibility of localized overheating and extending the inverter's lifespan.
[0027] In some embodiments, a first mounting member and a second mounting member are also included, wherein the number of the first mounting members is half the number of the power transistor groups, and the number of the second mounting members is the same as the number of the power transistor groups.
[0028] The first mounting component is connected to the first heating element of two adjacent power transistor groups, and the second mounting component is connected to two second heating elements of the same power transistor group.
[0029] As described above, each first mounting component connects the first heating element of two adjacent power transistor groups. By reducing the number of first mounting components, material costs and complexity can be reduced, while ensuring the mechanical connection and thermal management performance of adjacent power transistor groups.
[0030] In some embodiments, the length direction of the first mounting member is the same as the first direction, and the length direction of the second mounting member is the same as the second direction.
[0031] In some embodiments, the circuit further includes a power module and a capacitor, both of which are electrically connected to the circuit board substrate. The capacitor is located on the side of the circuit board substrate away from the heating element, while the power module and the heating element are located on the same side of the circuit board substrate and are spaced apart from each other.
[0032] With the above configuration, the capacitor helps smooth current fluctuations and reduce the impact of voltage spikes on the power module, thereby improving the electrical stability of the inverter. Positioning the power module and heat-generating components on opposite sides of the circuit board substrate facilitates thermal isolation, preventing heat generated by the heat-generating components from directly affecting the power module and thus the normal operation of the inverter. Attached Figure Description
[0033] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.
[0034] Figure 1 This is an exploded structural diagram of the inverter provided in this application;
[0035] Figure 2 This is a schematic diagram of the heat dissipation assembly of the inverter provided in this application.
[0036] Explanation of reference numerals in the attached figures:
[0037] 10. Inverter; X, first direction; Y, second direction;
[0038] 100. Circuit board substrate;
[0039] 200. Heating element; 201. Power transistor assembly; 210. First heating element; 220. Second heating element;
[0040] 300, Heat dissipation assembly; 310, First heat dissipation component; 320, Second heat dissipation component; 330, Heat dissipation body; 331, First groove; 332, Second groove;
[0041] 400, First mounting component; 500, Second mounting component; 600, Power module; 700, Capacitor.
[0042] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation
[0043] First, let me explain the terms used in this application:
[0044] An inverter is an electronic device used for power conversion; for example, a photovoltaic inverter can convert direct current (DC) generated by solar panels into alternating current (AC).
[0045] IGBT modules, also known as insulated gate bipolar transistor modules, are capable of switching operations under high voltage and high current conditions.
[0046] Boost module: Used to increase the input voltage to the required output voltage. In inverters, boost modules typically include SiC diodes and power MOSFETs.
[0047] SiC diode: also known as silicon carbide diode, is a wide-bandgap semiconductor device.
[0048] Power MOSFET: also known as a power field-effect transistor, is a semiconductor device used for switching.
[0049] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions in the embodiments of this application will be described in more detail below with reference to the accompanying drawings. In the drawings, the same or similar reference numerals denote the same or similar devices or devices having the same or similar functions throughout. The described embodiments are some device embodiments of this application, not all device embodiments. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application. The embodiments of this application will be described in detail below with reference to the accompanying drawings.
[0050] Reference Figure 1 This application provides an inverter 10, which includes a circuit board substrate 100.
[0051] The circuit board substrate 100 is used to mount and connect all necessary electronic components to ensure effective transmission of electrical signals and overall system stability.
[0052] Inverter 10 also includes devices disposed on circuit board substrate 100, including heat-generating components 200 that generate heat when powered on.
[0053] The heating element 200 includes a first heating element 210 and a second heating element 220. It should be noted that the first heating element 210 and the second heating element 220 have different heating capacities.
[0054] It is understandable that there are various electronic components in the inverter 10, and the heat generation capabilities of different electronic components are not the same.
[0055] For example, the first heating element 210 is used for power conversion in the inverter. During the conversion process, the first heating element 210 generates a significant amount of heat, especially under high current conditions. At this time, the second heating element 220 can be used for rectification. The heating capacity of the first heating element 210 is greater than that of the second heating element 220.
[0056] In another example, the second heating element 220 is used for switching the power on and off, and operates under conditions of higher voltage and higher current, generating more heat. In this case, the first heating element 210 is used for energy storage and reducing voltage fluctuations. The heating capacity of the first heating element 210 is less than that of the second heating element 220.
[0057] In this embodiment, the heating component 200 may include a power transistor group 201. The power transistor group 201 is the aforementioned boost module.
[0058] In some embodiments, a first heating element 210 and two second heating elements 220 together form a power transistor group 201. There are multiple power transistor groups 201, which are arranged on the circuit board substrate 100 along the first direction X.
[0059] It should be noted that the arrangement of multiple power transistor groups 201 along the first direction X means that all heat-generating components are arranged along the first direction X of the circuit board, that is, the first heat-generating component 210 and the second heat-generating component 220 are both arranged along the first direction X.
[0060] A uniform orientation can simplify circuit design, facilitate wiring, make the assembly process more intuitive and standardized, and reduce the possibility of assembly errors.
[0061] It is understood that the first direction X can refer to any direction on the surface of the circuit board substrate 100. In the embodiments of this application, the first direction X refers to the length direction of the circuit board substrate 100, i.e., X in the figures.
[0062] The two second heating elements 220 are located on the same side as the corresponding first heating element 210. That is, in each power transistor group 201, the two second heating elements 220 are located on the same side as the corresponding first heating element 210.
[0063] By grouping similar heating elements to one side, the possibility of confusion between different types of components can be reduced, thus avoiding assembly errors.
[0064] In addition, since the thermal characteristics of similar devices are similar in the above layout, a unified heat dissipation measure can be adopted, thereby simplifying thermal management.
[0065] The first heating element 210 and the second heating element 220 are arranged at intervals. It is understood that the interval arrangement helps to distribute heat evenly and avoid heat accumulation in certain locations on the circuit board substrate 100, thereby avoiding localized overheating.
[0066] The inverter 10 provided in this application embodiment reduces the possibility of misjudging the position of components during assembly by placing two second heating elements 220 on the same side of the first heating element 210, thereby improving the assembly yield. By arranging the first heating element 210 and the second heating element 220 at intervals, similar types of components have similar thermal characteristics, facilitating the use of the same heat dissipation measures, reducing design costs, and improving heat dissipation efficiency.
[0067] Reference Figure 1 As an optional implementation, the two second heating elements 220 of the same power transistor group 201 are arranged along the second direction Y. The above arrangement can effectively utilize the area of the circuit board substrate 100, which helps to optimize the overall layout of the circuit board substrate 100 and optimize the wiring.
[0068] The second direction Y intersects with the first direction X. The intersecting directions allow for more diverse layouts of the first heating element 210 and the second heating element 220 on the circuit board, which helps optimize the circuit path and thus improve electrical performance.
[0069] It is understood that the angle between the second direction Y and the first direction X can be arbitrary. For example, the angle between the second direction Y and the first direction X can be 30°, 45°, 60°, 90°, 120°, 140°, 150°, etc. The embodiments of this application do not limit the specific angle between the second direction Y and the first direction X, nor are they limited to the above examples.
[0070] The following explanation uses an example where the angle between the second direction Y and the first direction X is 90°, meaning that the first direction X is perpendicular to the second direction Y.
[0071] It should be noted that the angle between the second direction Y and the first direction X may be related to the shape of the circuit board substrate 100. For example, when the circuit board substrate 100 is a rectangular circuit board, the vertically arranged first direction X and second direction Y can provide a more suitable layout. In another example, when the circuit board substrate 100 is a circular circuit board, the first direction X and second direction Y arranged at 60° can provide a more uniform layout.
[0072] With the above configuration, the intersecting layout can prevent heat from accumulating in one direction on the circuit board. By distributing the heat-generating components 200 in different directions, heat can be dissipated more evenly, avoiding localized overheating and improving the thermal management efficiency of the inverter 10.
[0073] The following explanation uses a rectangular shape for the circuit board substrate 100 as an example.
[0074] Reference Figure 1 As an optional implementation, the inverter 10 also includes a heat dissipation component 300, which is located on the side of the heat-generating component 200 away from the circuit board substrate 100. Thus, the heat-generating component 200 can be located between the heat dissipation component 300 and the circuit board substrate 100. The heat-generating component 200 can perform its basic functions through the circuit board substrate 100, and its close thermal contact with the heat dissipation component 300 facilitates the heat dissipation component 300 in dissipating the heat emitted by the heat-generating component 200.
[0075] The heat dissipation assembly 300 includes a first heat sink 310 and a second heat sink 320, wherein the first heat sink 310 and the second heat sink 320 have different thermal conductivity. The first heat sink 310 is in thermal contact with the first heat-generating element 210, and the second heat sink 320 is in thermal contact with the second heat-generating element 220.
[0076] It is understandable that thermal contact means that heat is conducted between the two. The heat-generating component will generate heat during operation, and the heat can be discharged through the corresponding heat sink.
[0077] By using different types of heat sinks, customized heat dissipation capabilities can be provided for different heat-generating components, thereby improving heat dissipation efficiency and preventing overheating. For example, materials with high thermal conductivity can be used for components with high heat dissipation requirements, which can improve heat dissipation efficiency and the overall reliability of inverter 10.
[0078] It should be noted that materials with different thermal conductivity have different costs. Through the above-mentioned adaptive heat dissipation, the overflow or insufficiency of heat dissipation capacity can be avoided, thereby improving the utilization rate of heat dissipation capacity and reducing costs.
[0079] Reference Figure 1 As an optional implementation, the first heat-generating element 210 is a silicon carbide diode (i.e., the aforementioned SiC diode). SiC diodes possess rectification characteristics and fast recovery capabilities, making them suitable for high-frequency applications. SiC diodes have low heat generation, resulting in lower switching losses and high-temperature performance. Therefore, SiC diodes can operate stably even in high-temperature environments, requiring less heat dissipation.
[0080] The second heat-generating component 220 is a power MOSFET (i.e., the aforementioned power MOSFET). Power MOSFETs generate significant heat during high-frequency switching operations. Especially under high current conditions, the conduction and switching losses of power MOSFETs are large, resulting in a high demand for heat dissipation.
[0081] Since the first heating element 210 has a relatively low heating capacity, the first heat sink 310 can be made of a material with a low thermal conductivity, thereby reducing costs. However, the second heating element 220, due to its higher heat generation, requires a material with a higher thermal conductivity for effective heat dissipation, ensuring its performance and reliability. That is, the thermal conductivity of the first heat sink 310 is lower than that of the second heat sink 320.
[0082] Reference Figure 1 As an optional implementation, both the first heat sink 310 and the second heat sink 320 are rectangular in shape. As can be seen from the foregoing, when the circuit board substrate 100 is rectangular, the rectangular first heat sink 310 and second heat sink 320 can effectively cover the surface of the heat-generating component 200, providing a good thermal contact area.
[0083] In some embodiments, the length direction of the first heat sink 310 is the same as the second direction Y, and the length direction of the second heat sink 320 is the same as the first direction X.
[0084] It should be noted that in a group of power transistors 201, the number of second heat-generating elements 220 is greater than the number of first heat-generating elements 210, that is, the number of second heat-dissipating elements 320 is greater than the number of first heat-generating elements 210.
[0085] In some embodiments, in order to reduce the processing cost of the first heat sink 310 and the second heat sink 320, the first heat sink 310 and the second heat sink 320 are usually the same in shape and size. In this way, through the above arrangement, the area of the heat dissipation component 300 corresponding to a group of power transistors 201 is smaller, and a larger number of power transistors 201 can be integrated on the same circuit board substrate 100, which is beneficial to the miniaturization design of the inverter 10.
[0086] Reference Figure 2 As an optional implementation, the heat dissipation assembly 300 also includes a heat dissipation body 330. The heat dissipation body 330 can support and fix the heat dissipation components, enhancing the structural integrity and stability of the heat dissipation system. Furthermore, the heat dissipation body 330 can be circulated with coolant or equipped with a cooling fan to conduct the heat transferred by the first heat dissipation component 310 and the second heat dissipation component 320 to the external environment, preventing heat accumulation.
[0087] Reference Figure 2 The heat dissipation body 330 has a first groove 331 and a second groove 332 spaced apart on the side facing the circuit board substrate 100. The first heat dissipation component 310 is located in the first groove 331 and the second heat dissipation component 320 is located in the second groove 332.
[0088] Understandably, the groove increases the contact area between the heat sink and the heat sink body 330, thereby improving heat conduction efficiency. Additionally, the groove can also position the heat sink, simplifying the assembly process.
[0089] By setting grooves to match the heat sinks, it is ensured that each heat sink can be fixed, preventing the first heat sink 310 and the second heat sink 320 from becoming loose during operation.
[0090] Reference Figure 1 As an optional implementation, both the first heating element 210 and the second heating element 220 are soldered to the circuit board substrate 100. Soldering provides a reliable electrical and mechanical connection, ensuring good contact between the heating element and the circuit board substrate 100, and reducing resistance and signal loss.
[0091] Both the first heat sink 310 and the second heat sink 320 are threadedly connected to the circuit board substrate 100. That is, the first heat sink 310 and the second heat sink 320 can be threaded together using bolts, screws, or other threaded fasteners. The first heat sink 310 and the second heat sink 320 can be installed or removed as needed, facilitating maintenance and replacement.
[0092] As an optional implementation, both sides of the first heat sink 310 and the second heat sink 320 are covered with thermally conductive silicone grease.
[0093] Understandably, thermal grease is a highly efficient thermal interface material that can fill the gaps between the heat sink and the heat sink body 330, or between the heat sink and the circuit board substrate 100, thereby reducing thermal resistance and improving thermal conductivity.
[0094] In addition, by applying thermal grease to both sides of the heat sink, the heat distribution is more uniform, which can reduce the possibility of local overheating and extend the service life of the inverter 10.
[0095] It is understood that there are many types of thermal grease, and users can choose the appropriate thermal grease according to their needs. The embodiments of this application will not be described in detail here.
[0096] Reference Figure 1 As an optional implementation, the inverter 10 further includes a first mounting member 400 and a second mounting member 500. The number of first mounting members 400 is half the number of power transistor groups 201, and the number of second mounting members 500 is the same as the number of power transistor groups 201. The first mounting members 400 are connected to the first heating element 210 of two adjacent power transistor groups 201, and the second mounting members 500 are connected to the two second heating elements 220 of the same power transistor group 201.
[0097] As described above, each first mounting component 400 connects the first heating element 210 of two adjacent power transistor groups 201. By reducing the number of first mounting components 400, material costs and complexity can be reduced, while ensuring the mechanical connection and thermal management performance of adjacent power transistor groups 201.
[0098] Each power transistor group 201 is equipped with a second mounting bracket 500 for connecting two second heating elements 220 within the same group. This configuration ensures that the second heating element 220 of each power transistor group 201 receives proper mechanical support and thermal management.
[0099] It should be noted that the size, shape, material, etc. of the first mounting component 400 and the second mounting component 500 may be the same or different, depending on the actual situation. This application embodiment does not limit this.
[0100] As an optional implementation, the length direction of the first mounting member 400 is the same as the first direction X, and the length direction of the second mounting member 500 is the same as the second direction Y.
[0101] As described above, the length direction of the first heat sink 310 is the same as the second direction Y, and the length direction of the second heat sink 320 is the same as the first direction X. To ensure that one first mounting member 400 connects to the first heat sink 210 of two adjacent power transistor groups 201, and one second mounting member 500 connects to the two second heat sinks 220 of the same power transistor group 201, the length direction of the first mounting member 400 is the same as the width direction of the corresponding first heat sink 310, and the length direction of the second mounting member 500 is the same as the width direction of the second heat sink 320.
[0102] Reference Figure 1 As an optional implementation, the system also includes a power module 600 and a capacitor 700, both electrically connected to the circuit board substrate 100. The capacitor 700 is located on the side of the circuit board substrate 100 away from the heat-generating component 200. The capacitor 700 helps to smooth current fluctuations and reduce the impact of voltage spikes on the power module 600, thereby improving the electrical stability of the inverter 10.
[0103] The power module 600 and the heat-generating component 200 are located on the same side of the circuit board substrate 100, and are spaced apart. This helps with thermal isolation, preventing the heat generated by the heat-generating component 200 from directly affecting the power module 600, and thus affecting the normal operation of the inverter 10.
[0104] It should be noted that the power module 600 in this embodiment is an IGBT (Insulated Gate Bipolar Transistor) module, used for power conversion and regulation. In the description of the embodiments of this application, it should be understood that, unless otherwise explicitly specified and limited, the terms "installed," "connected," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, an indirect connection via an intermediate medium, the connection of devices within two components, or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.
[0105] The terms "upper," "lower," "front," "rear," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. In the description of this application, "multiple" means two or more, unless otherwise precisely specified.
[0106] The terms "first," "second," "third," "fourth," etc., used in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.
[0107] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to the technical features of the device components or the entire device. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.
Claims
1. An inverter (10), characterized in that, It includes a circuit board substrate (100) and devices disposed on the circuit board substrate (100), the devices including a heat-generating component (200) that generates heat when powered on; The heating component (200) includes a first heating element (210) and a second heating element (220) with different heating capacities. One first heating element (210) and two second heating elements (220) together form a power transistor group (201). The number of power transistor groups (201) is multiple, and the multiple power transistor groups (201) are arranged along the first direction (X) on the circuit board substrate (100); The two second heating elements (220) are located on the same side as the corresponding first heating element (210), and the first heating element (210) and the second heating element (220) are arranged at intervals.
2. The inverter (10) according to claim 1, characterized in that, Two second heating elements (220) of the same power transistor group (201) are arranged along a second direction (Y), which intersects with the first direction (X).
3. The inverter (10) according to claim 2, characterized in that, It also includes a heat dissipation component (300), wherein the heat dissipation component (200) is located between the heat dissipation component (300) and the circuit board substrate (100), and the heat dissipation component (300) includes a first heat dissipation element (310) and a second heat dissipation element (320), wherein the first heat dissipation element (310) and the second heat dissipation element (320) have different thermal conductivity. The first heat sink (310) is in thermal contact with the first heat-generating element (210), and the second heat sink (320) is in thermal contact with the second heat-generating element (220).
4. The inverter (10) according to claim 3, characterized in that, The first heating element (210) is a silicon carbide diode, and the second heating element (220) is a power MOSFET; The thermal conductivity of the first heat sink (310) is less than that of the second heat sink (320).
5. The inverter (10) according to claim 4, characterized in that, Both the first heat sink (310) and the second heat sink (320) are rectangular in shape; The length direction of the first heat sink (310) is the same as the second direction (Y), and the length direction of the second heat sink (320) is the same as the first direction (X).
6. The inverter (10) according to claim 5, characterized in that, The heat dissipation assembly (300) further includes a heat dissipation body (330), which has a first groove (331) and a second groove (332) spaced apart on the side facing the circuit board substrate (100). The first heat dissipation element (310) is located in the first groove (331), and the second heat dissipation element (320) is located in the second groove (332).
7. The inverter (10) according to claim 3, characterized in that, The first heating element (210) and the second heating element (220) are both welded to the circuit board substrate (100), and the first heat sink (310) and the second heat sink (320) are both threaded to the circuit board substrate (100). And / or, Both sides of the first heat sink (310) and the second heat sink (320) are covered with thermally conductive silicone grease.
8. The inverter (10) according to claim 6, characterized in that, It also includes a first mounting component (400) and a second mounting component (500), wherein the number of the first mounting components (400) is half the number of the power transistor group (201), and the number of the second mounting components (500) is the same as the number of the power transistor group (201); The first mounting member (400) is connected to the first heating element (210) of two adjacent power transistor groups (201), and the second mounting member (500) is connected to the two second heating elements (220) of the same power transistor group (201).
9. The inverter (10) according to claim 8, characterized in that, The length direction of the first mounting member (400) is the same as the first direction (X), and the length direction of the second mounting member (500) is the same as the second direction (Y).
10. The inverter (10) according to any one of claims 1-9, characterized in that, It also includes a power module (600) and a capacitor (700), both of which are electrically connected to the circuit board substrate (100). The capacitor (700) is located on the side of the circuit board substrate (100) away from the heating component (200). The power module (600) and the heating component (200) are located on the same side of the circuit board substrate (100) and are spaced apart.