Direct current amplifier of magnetomotive power generation device

Abstract

The utility model discloses a direct current amplifier of a magnetomotive power generation device, which is provided with an MOS (Metal Oxide Semiconductor) driving unit, a voltage regulating unit, an MOS tube group, a first wiring terminal, an overvoltage protection unit, a photoelectric coupling unit and a second wiring terminal, the voltage regulation unit receives the input voltage processed by the overvoltage protection unit and outputs direct-current voltage to the MOS driving unit and the photoelectric coupling unit, the MOS driving unit controls the MOS tube group to output a first switching signal according to the direct-current voltage, and the photoelectric coupling unit controls the second wiring end to output a second switching signal according to the direct-current voltage. The parallel MOS tubes form the MOS tube group to increase the pushing current of the direct-current amplifier and reduce spontaneous heating, each MOS tube is correspondingly connected with two matched resistors, individual difference between the MOS tubes can be prevented, the overvoltage protection unit can prevent a power supply circuit from being burnt out due to overhigh voltage, and the service life of the power supply circuit is prolonged. The voltage adjusting unit can reduce and stabilize the input voltage.

Description

Technical Field

[0001] This utility model belongs to the technical field of magnetic power generation devices, and particularly relates to a DC amplifier for a magnetic power generation device. Background Technology

[0002] A magnetic power generation device is a device that converts magnetic field energy into electrical energy, playing a vital role in modern industry. Magnetic power generation devices typically require transistors for driving. Specifically, operational amplifiers are used in the pre-stage to shape small signals, and transistors are used in the subsequent two-stage drive. This makes the circuit structure complex, requires more materials, and necessitates a very large heatsink, thus affecting the conversion efficiency of the magnetic power generation device and leading to a high failure rate. Utility Model Content

[0003] To address the aforementioned problems, this utility model provides a DC amplifier for a magnetic power generation device, which ensures that there is no interference between the DC input and output, prevents damage to the voltage regulation unit due to sudden power surges, and improves the safety of the device, thereby solving the problems mentioned in the background art.

[0004] To achieve the above objectives, the present invention adopts the following technical solution:

[0005] This utility model provides a DC amplifier for a magnetic power generation device. The DC amplifier includes a MOS driving unit, a voltage regulation unit, a MOS transistor group, a first terminal, an overvoltage protection unit, an optocoupler unit, and a second terminal. The overvoltage protection unit is connected to the first terminal. The overvoltage protection unit and the MOS driving unit are both connected to the voltage regulation unit. The optocoupler unit is connected to the MOS driving unit and the second terminal. The MOS transistor group includes multiple MOS transistors connected in parallel. The gate of each MOS transistor is connected between two matching resistors. One of the matching resistors is connected to the MOS driving unit, and the other matching resistor is grounded. The drain of each MOS transistor is connected to the first terminal, and the source of each MOS transistor is grounded.

[0006] Wherein, the first terminal is used for input voltage, the voltage regulation unit receives the input voltage processed by the overvoltage protection unit and outputs DC voltage to the MOS driving unit and the optocoupler unit respectively, the MOS driving unit controls the MOS transistor group to output a first switching signal with high current and high voltage according to the DC voltage, and the optocoupler unit controls the second terminal to output a second switching signal according to the DC voltage.

[0007] As a preferred embodiment of the above technical solution, the voltage regulation unit includes a first linear voltage regulator module, a second linear voltage regulator module, and a buck module. The second linear voltage regulator module and the buck module are both connected to the first linear voltage regulator module. The buck module is connected to the overvoltage protection unit. The first linear voltage regulator module is connected to the MOS driving unit. The second linear voltage regulator module is connected to the optocoupler unit.

[0008] As a preferred embodiment of the above technical solution, the first terminal includes a VCC terminal and a YO terminal, both of which are connected to the overvoltage protection unit, and the YO terminal is connected to the drain of each MOS transistor.

[0009] As a preferred embodiment of the above technical solution, the DC amplifier further includes a reverse connection protection module connected to the overvoltage protection unit and the VCC terminal, and an indicator module connected in parallel between the VCC terminal and the YO terminal, wherein the reverse connection protection module is connected to the indicator module.

[0010] As a preferred embodiment of the above technical solution, the overvoltage protection unit includes a TVS diode D5 and multiple resistors connected in parallel, the multiple resistors being connected to the TVS diode D5 and the step-down module.

[0011] As a preferred embodiment of the above technical solution, the step-down module includes a transistor Q10, a diode D11, and a resistor R27. The emitter of the transistor Q10 is connected to the first linear voltage regulator module, the base of the transistor Q10 is connected to the cathode of the diode D11 and one end of the resistor R27, the anode of the diode D11 is grounded, and the other end of the resistor R27, the collector of the transistor Q10, and the plurality of parallel resistors are connected.

[0012] As a preferred embodiment of the above technical solution, the first linear voltage regulator module includes a chip U8, capacitors C12 and C22, both connected to the chip U8, a diode D12 connected in parallel between the capacitor C22 and the step-down module, and the capacitor C12 connected to the second linear voltage regulator module.

[0013] As a preferred embodiment of the above technical solution, the second linear voltage regulator module includes a chip U9, a capacitor C21 and a capacitor C20 both connected to the chip U9, the capacitor C21 being connected in parallel to the optocoupler unit, and the capacitor C20 and the capacitor C21 being connected in parallel to the MOS drive unit.

[0014] As a preferred embodiment of the above technical solution, the output DC voltage of the first linear voltage regulator module is greater than the output DC voltage of the second linear voltage regulator module, the model of the chip U8 is CJ78L15, and the model of the chip U9 is CJ78L05.

[0015] As a preferred embodiment of the above technical solution, the optocoupler unit includes a chip U7 with model number 6N1375, the MOS driving unit includes a chip U1 with model number FD2103S, the first switching signal is a switching signal with a peak voltage of 100V and a current of 1000A, and the second switching signal is a switching signal with a voltage greater than 8V.

[0016] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0017] By configuring a MOS drive unit, a voltage regulation unit, a MOS transistor group, a first terminal, an overvoltage protection unit, an optocoupler unit, and a second terminal, the voltage regulation unit receives the input voltage processed by the overvoltage protection unit and outputs DC voltage to the MOS drive unit and the optocoupler unit respectively. The MOS drive unit controls the MOS transistor group to output a high-current, high-voltage first switching signal according to the DC voltage. The optocoupler unit controls the second terminal to output a second switching signal according to the DC voltage. The use of the optocoupler unit can ensure that there is no interference between the DC input and output. Multiple parallel MOS transistors forming a MOS transistor group can increase the drive current of the DC amplifier and reduce self-heating. Each MOS transistor is connected to two matching resistors to prevent individual differences between MOS transistors, thereby improving the working stability. The overvoltage protection unit can prevent the power supply circuit from burning out due to excessive voltage. The voltage regulation unit can step down and regulate the input voltage, ensuring the working stability of the circuit or chip. Attached Figure Description

[0018] Figure 1 This is a structural block diagram of the DC amplifier of the magnetic power generation device proposed in this utility model;

[0019] Figure 2 This is a circuit diagram of the MOS driving unit proposed in this utility model;

[0020] Figure 3 This is a circuit diagram of the voltage regulation unit proposed in this utility model.

[0021] The symbols for the main components are explained below:

[0022] 100-MOS drive unit; 110-voltage regulation unit; 111-first linear regulator module; 112-second linear regulator module; 113-step-down module; 120-MOS transistor group; 130-first terminal; 131-VCC terminal; 132-YO terminal; 140-overvoltage protection unit; 150-optocoupler unit; 160-second terminal; 170-reverse connection protection module; 180-indicator module. Detailed Implementation

[0023] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments.

[0024] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0025] See Figure 1 , Figure 2 and Figure 3 This utility model provides a DC amplifier for a magnetic power generation device. The DC amplifier includes a MOS drive unit 100, a voltage regulation unit 110, a MOS transistor group 120, a first terminal 130, an overvoltage protection unit 140, an optocoupler unit 150, and a second terminal 160. The overvoltage protection unit 140 is connected to the first terminal 130. The overvoltage protection unit 140 and the MOS drive unit 100 are both connected to the voltage regulation unit 110. The optocoupler unit 150 is connected to the MOS drive unit 100 and to the second terminal 160. The MOS transistor group 120 includes multiple MOS transistors connected in parallel. The gate of each MOS transistor is connected between two matching resistors. One of the matching resistors is connected to the MOS drive unit 100, and the other matching resistor is grounded. The drain of each MOS transistor is connected to the first terminal 130, and the source of each MOS transistor is grounded.

[0026] Wherein, the first terminal 130 is used for input voltage, the voltage regulation unit 110 receives the input voltage processed by the overvoltage protection unit 140 and outputs DC voltage to the MOS driving unit 100 and the optocoupler unit 150 respectively, the MOS driving unit 100 controls the MOS transistor group 120 to output a high current and high voltage first switching signal according to the DC voltage, and the optocoupler unit 150 controls the second terminal 160 to output a second switching signal according to the DC voltage.

[0027] In this embodiment, the voltage regulation unit 110 includes a first linear voltage regulator module 111, a second linear voltage regulator module 112, and a buck module 113. The second linear voltage regulator module 112 and the buck module 113 are both connected to the first linear voltage regulator module 111. The buck module 113 is connected to the overvoltage protection unit 140. The first linear voltage regulator module 111 is connected to the MOS driving unit 100. The second linear voltage regulator module 112 is connected to the optocoupler unit 150. The first terminal 130 includes a VCC terminal 131 and a YO terminal 132, both connected to the overvoltage protection unit 140. The YO terminal 132 is connected to the drain of each MOS transistor. The DC amplifier also includes a reverse connection protection module 170 connected to the overvoltage protection unit 140 and the VCC terminal 131, and an indicator module 180 connected in parallel between the VCC terminal 131 and the YO terminal 132. The reverse connection protection module 170 is connected to the indicator module 180. The overvoltage protection unit 140 includes a TVS diode D5 and multiple resistors connected in parallel. The multiple resistors in parallel are connected to the TVS diode D5 and the step-down module 113. The step-down module 113 includes a transistor Q10, a diode D11, and a resistor R27. The emitter of the transistor Q10 is connected to the first linear voltage regulator module 111. The base of the transistor Q10 is connected to the cathode of the diode D11 and one end of the resistor R27. The anode of the diode D11 is grounded. The other end of the resistor R27 and the collector of the transistor Q10 are connected to the multiple resistors in parallel.

[0028] It should be noted that the first linear voltage regulator module 111 includes a chip U8, capacitors C12 and C22 both connected to the chip U8, a diode D12 connected in parallel between capacitor C22 and the buck module 113, and capacitor C12 connected to the second linear voltage regulator module 112; the second linear voltage regulator module 112 includes a chip U9, capacitors C21 and C20 both connected to the chip U9, capacitor C21 connected in parallel to the optocoupler unit 150, and capacitors C20 and C12 connected in parallel to the MOS driver. The MOS driving unit 100 includes a first linear voltage regulator module 111 whose output DC voltage is greater than that of the second linear voltage regulator module 112; the chip U8 is model CJ78L15 and the chip U9 is model CJ78L05; the optocoupler unit 150 includes a chip U7 with model 6N1375; the MOS driving unit 100 includes a chip U1 with model FD2103S; the first switching signal is a switching signal with a peak voltage of 100V and a current of 1000A; and the second switching signal is a switching signal with a voltage greater than 8V.

[0029] The VCC terminal 131 and YO terminal 132 each contain four interfaces. A resistor R26, a diode D7, and a capacitor C18 are connected in parallel between the VCC terminal 131 and the YO terminal 132. Capacitor C18 is connected to the YO terminal 132 and the MOSFET group 120. The indicator module 180 includes an LED1 diode and a resistor R4. Resistor R4 is connected to the anode of diode LED1, and the cathode of diode LED1 is connected to the YO terminal 132. The input voltage VCC is 100V. The reverse connection protection module 170 includes a diode D1 to prevent reverse connection damage. The anode of diode D1 is connected to the power input terminal, and the cathode of diode D1 is connected to the cathode of diode D9. The anode of diode D9 is connected to the overvoltage protection unit 140. Overvoltage protection unit 140 is connected in parallel with capacitor C13. The output of overvoltage protection unit 140 is a 50V DC voltage. After being processed by buck module 113, it inputs 18V to the first linear regulator module 111. Chip U8 linearly regulates the 18V voltage, outputting 15V to the second linear regulator module 112 and chip U1. The 15V voltage is then linearly regulated by chip U9 and output as 5V to optocoupler unit 150. Diode D1 effectively protects against reverse connection errors during operation. TVS diode D5 is used in the pre-stage power supply, and TVS diode D12 is used in the post-stage to ensure that sudden power surges will not burn out the voltage regulator ICs U8 and U9.

[0030] The MOSFET group 120 mainly includes four parallel MOSFETs: Q5, Q6, Q7, and Q8. The gate G1 of MOSFET Q5 is connected to resistors R18 and R19; the gate G2 of MOSFET Q6 is connected to resistors R20 and R21; the gate G3 of MOSFET Q7 is connected to resistors R22 and R23; and the gate G4 of MOSFET Q8 is connected to resistors R24 and R25. Resistors R18, R20, R22, and R24 are connected in parallel to pin 5 of chip U1. Pin 1 of chip U1 is connected in parallel to capacitors C14 and C15. Pin 3 of chip U1 is connected in parallel to resistors R17 and R16. Resistor R17 is connected to pin 6 of chip U7. Resistor R16 is connected to pin 8 of chip U1 and capacitor C16. Capacitor C16 is connected in parallel to pins 8 and 5 of chip U1. Capacitor C16 is connected in parallel with capacitor C17. Pin 2 of chip U7 is connected to resistor R1, and pin 3 of chip U7 is connected to resistor R2. Resistors R1 and R2 are connected in parallel. Resistor R3 and diode D10 are connected in parallel between resistors R1 and R2. The second terminal 160 is the P1 terminal of the four-interface connector. Resistors R1 and R2 are connected to interfaces 4 and 3 of the P1 terminal. The optocoupler unit 150 uses opto-isolated IC U7 to ensure that there is no interference between DC input and output.

[0031] Specifically, using multiple parallel MOSFETs reduces the overall internal resistance of the MOSFET group, increases the drive current, reduces self-heating, and improves circuit efficiency. Compared to existing technologies, eliminating the original through-hole packaging and using surface-mount packaging (i.e., MOSFETs Q5-Q8 are all surface-mount devices) significantly improves production efficiency and increases capacity. For MOSFET driving, chip U1 is selected as the gate driver chip to prevent individual differences between MOSFETs. Each MOSFET uses a separate drive matching resistor R18-R25, improving MOSFET performance. For signal isolation, the small input DC signal is opto-isolated at 4KV, and chip U7 ensures no interference between the DC signal input and output. In terms of power supply, a 70V TVS diode D5 was added to prevent the power supply circuit from burning out due to excessive voltage. A diode D1 was also added to the circuit to prevent the power supply from burning out due to reverse connection. In addition, the high voltage is stepped down and regulated. Transistor Q10 and diode D11 form a step-down module 113, which can reduce the 100V voltage to 18V DC, and then further reduce it to 15V DC and 5V DC through LDO to power chips U1 and U7 respectively.

[0032] It should be understood that by configuring a MOS drive unit 100, a voltage regulation unit 110, a MOS transistor group 120, a first terminal 130, an overvoltage protection unit 140, an optocoupler unit 150, and a second terminal 160, the voltage regulation unit 110 receives the input voltage processed by the overvoltage protection unit 140 and outputs DC voltages to the MOS drive unit 100 and the optocoupler unit 150 respectively. The MOS drive unit 100 controls the MOS transistor group 120 to output a high-current, high-voltage first switching signal according to the DC voltage, and the optocoupler unit 150 controls the second terminal 160 according to the DC voltage. The second switching signal is output from the two terminals 160. The optocoupler unit 150 ensures that there is no interference between the DC input and output. The MOSFET group 120 composed of multiple parallel MOSFETs increases the drive current of the DC amplifier and reduces self-heating. Each MOSFET is connected to two matching resistors to prevent individual differences between MOSFETs, thereby improving the working stability. The overvoltage protection unit 140 can prevent the power supply circuit from burning out due to excessive voltage. The voltage regulation unit 110 can step down and regulate the input voltage to ensure the working stability of the circuit or chip.

[0033] The above description is only a preferred embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Any equivalent substitutions or changes made by those skilled in the art within the scope of the technology disclosed in the present utility model, based on the technical solution and the inventive concept of the present utility model, should be included within the protection scope of the present utility model.

Claims

1. A DC amplifier for a magnetic power generation device, characterized in that, The DC amplifier includes a MOS driving unit, a voltage regulation unit, a MOS transistor group, a first terminal, an overvoltage protection unit, an optocoupler unit, and a second terminal. The overvoltage protection unit is connected to the first terminal. The overvoltage protection unit and the MOS driving unit are both connected to the voltage regulation unit. The optocoupler unit is connected to the MOS driving unit and to the second terminal. The MOS transistor group includes multiple MOS transistors connected in parallel. The gate of each MOS transistor is connected between two matching resistors. One of the matching resistors is connected to the MOS driving unit, and the other matching resistor is grounded. The drain of each MOS transistor is connected to the first terminal, and the source of each MOS transistor is grounded. Wherein, the first terminal is used for input voltage, the voltage regulation unit receives the input voltage processed by the overvoltage protection unit and outputs DC voltage to the MOS driving unit and the optocoupler unit respectively, the MOS driving unit controls the MOS transistor group to output a first switching signal with high current and high voltage according to the DC voltage, and the optocoupler unit controls the second terminal to output a second switching signal according to the DC voltage.

2. The DC amplifier of the magnetic power generation device according to claim 1, characterized in that, The voltage regulation unit includes a first linear voltage regulator module, a second linear voltage regulator module, and a buck module. The second linear voltage regulator module and the buck module are both connected to the first linear voltage regulator module. The buck module is connected to the overvoltage protection unit. The first linear voltage regulator module is connected to the MOS driving unit. The second linear voltage regulator module is connected to the optocoupler unit.

3. The DC amplifier of the magnetic power generation device according to claim 2, characterized in that, The first terminal includes a VCC terminal and a YO terminal, both of which are connected to the overvoltage protection unit. The YO terminal is connected to the drain of each MOS transistor.

4. The DC amplifier of the magnetic power generation device according to claim 3, characterized in that, The DC amplifier also includes a reverse connection protection module connected to the overvoltage protection unit and the VCC terminal, and an indicator module connected in parallel between the VCC terminal and the YO terminal, wherein the reverse connection protection module is connected to the indicator module.

5. The DC amplifier of the magnetic power generation device according to claim 2, characterized in that, The overvoltage protection unit includes a TVS diode D5 and multiple resistors connected in parallel, which are connected to the TVS diode D5 and the step-down module.

6. The DC amplifier of the magnetic power generation device according to claim 5, characterized in that, The step-down module includes a transistor Q10, a diode D11, and a resistor R27. The emitter of the transistor Q10 is connected to the first linear voltage regulator module, the base of the transistor Q10 is connected to the cathode of the diode D11 and one end of the resistor R27, the anode of the diode D11 is grounded, and the other end of the resistor R27, the collector of the transistor Q10, and the plurality of parallel resistors are connected.

7. The DC amplifier of the magnetic power generation device according to claim 2, characterized in that, The first linear voltage regulator module includes a chip U8, capacitors C12 and C22, both connected to the chip U8, a diode D12 connected in parallel between the capacitor C22 and the step-down module, and the capacitor C12 connected to the second linear voltage regulator module.

8. The DC amplifier of the magnetic power generation device according to claim 7, characterized in that, The second linear voltage regulator module includes a chip U9, capacitors C21 and C20, both connected to the chip U9. The capacitor C21 is connected in parallel to the optocoupler unit, and the capacitors C20 and C12 are connected in parallel to the MOS drive unit.

9. The DC amplifier of the magnetic power generation device according to claim 8, characterized in that, The output DC voltage of the first linear voltage regulator module is greater than the output DC voltage of the second linear voltage regulator module. The model number of chip U8 is CJ78L15, and the model number of chip U9 is CJ78L05.

10. The DC amplifier of the magnetic power generation device according to claim 1, characterized in that, The optocoupler unit includes a chip U7 with model number 6N1375, the MOS drive unit includes a chip U1 with model number FD2103S, the first switching signal is a switching signal with a peak voltage of 100V and a current of 1000A, and the second switching signal is a switching signal with a voltage greater than 8V.

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