MPCVD carrier and MPCVD device

Abstract

The utility model provides an MPCVD carrier and an MPCVD device, belongs to the technical field of microwave plasmas, and solves the problem of low nucleation efficiency of diamond heterogeneous single crystals in the prior art. The device comprises a base table, wherein the base table is used for bearing a workpiece; the heating assembly comprises a heater, and the heater is arranged below the base table and used for supplying heat to the base table; the heating electrode is electrically connected with the heater; and a bias voltage assembly, the bias voltage assembly comprises a bias voltage conductive piece, the bias voltage conductive piece is located below the base station, and the bias voltage conductive piece is electrically connected with the base station; and the bias voltage wire is electrically connected with the bias voltage conductive piece. According to the diamond heterogeneous single crystal nucleation device, by arranging the heating assembly and the bias assembly, a heating and bias environment is provided for the base table, so that it is guaranteed that the plasma concentration above the base table basically conforms to the optimal required concentration of diamond heterogeneous nucleation, and the diamond heterogeneous single crystal nucleation efficiency can be effectively improved.

Description

Technical Field

[0001] This application belongs to the field of microwave plasma technology, and more specifically, relates to an MPCVD carrier and an MPCVD device. Background Technology

[0002] Existing MPCVD (microwave plasma chemical vapor deposition) devices typically consist of a microwave cavity assembly, a stage, and a lifting structure, with the diamond growth substrate placed atop the stage. During operation, microwaves generated by a microwave generator are conducted to the microwave cavity assembly via waveguides, and reactive gases such as CH4 and H2 are introduced through special gas pipelines. Simultaneously, a certain degree of vacuum is maintained within the microwave cavity. When microwave energy acts on the reactive gas molecules, it excites electrons within the molecules, causing them to transition to higher energy levels, thus creating excited-state molecules. These excited-state molecules collide with other molecules, transferring energy to them, ultimately leading to the ionization of the gas molecules and the formation of plasma.

[0003] However, in existing technologies, heterocrystalline diamond nucleation is difficult, mainly due to the high temperature and low plasma concentration required for heterocrystalline diamond nucleation, while the substrate abutment must be negatively biased. If the required nucleation temperature is achieved solely through the abutment, the required microwave power and gas pressure are high, and the resulting plasma concentration is much higher than the concentration required for nucleation, resulting in low nucleation efficiency.

[0004] Based on the above, the technical problem to be solved by this application is that the nucleation efficiency of heterocrystalline diamond is relatively low. Utility Model Content

[0005] The purpose of this application is to address the aforementioned problems in the prior art by proposing an MPCVD carrier that solves the problem of low heterogeneous single-crystal nucleation efficiency of diamond in the prior art and improves the heterogeneous single-crystal nucleation efficiency of diamond.

[0006] The objective of this application can be achieved through the following technical solution: an MPCVD carrier, comprising: a base for supporting a workpiece; a heating assembly, comprising: a heater disposed below the base for supplying heat to the base; a heating electrode electrically connected to the heater; and a biasing assembly, comprising: a biasing conductor disposed on the outer periphery of the heater and electrically connected to the base; and a biasing wire electrically connected to the biasing conductor.

[0007] Understandably, a diamond growth substrate can be placed on the substrate, and a heating assembly is arranged below the substrate to provide heat to it. Specifically, the heating assembly includes a heater and a heating electrode. The heating electrode can be connected to a heating power supply to supply electrical energy to the heater, which then releases heat. The bias assembly includes a bias conductor and a bias wire. The bias wire can be connected to a bias power supply to transfer current to the bias conductor, which then transfers it to the substrate, thus giving the substrate a negative bias. Under optimal temperature and bias control, the plasma concentration formed on the substrate is essentially consistent with the concentration required for heterogeneous diamond nucleation, effectively improving the heterogeneous single-crystal nucleation efficiency of diamond.

[0008] In the aforementioned MPCVD carrier, a connecting plate is further provided between the heater and the heating electrode. Connecting columns are provided on the connecting plate, which is connected to both the heating electrode and the connecting columns. The connecting columns are connected to both the connecting plate and the heater. For example, multiple connecting columns can be used. By providing multiple connecting columns, the heater can be stably supported, ensuring its flatness and thus improving the heating uniformity of the substrate. Furthermore, the position of the heater can be indirectly adjusted by adjusting the position of the connecting plate or connecting columns, thereby controlling the heating temperature or other factors, and the stability of the adjustment process can be correspondingly ensured.

[0009] In the aforementioned MPCVD carrier, a base is provided below the bias conductive element, and a heat insulation plate is provided on the base. A shielding cavity is formed between the heat insulation plate, the bias conductive element, and the base, and the heater is housed within the shielding cavity. For example, the bias conductive element is annular, which can simultaneously enclose the shielding cavity with the top base and the bottom heat insulation plate, thereby transmitting bias current while preventing microwaves from entering the shielding cavity and damaging the heater. Alternatively, the bias conductive element can be cylindrical, directly enclosing the shielding cavity with the top base, achieving the same effect.

[0010] In the aforementioned MPCVD carrier, the bias conductive element includes: a surrounding portion that at least partially surrounds the outer periphery of the heater and is connected to the base; and a connecting portion that is connected to the surrounding portion, passes through the base, and is connected to the bias wire.

[0011] It is understood that the surrounding portion can be annular or cylindrical, enclosing the heater, and the top of the surrounding portion is connected to the base to conduct current. The height and inner diameter of the surrounding portion are closely related to the size of the heater. For example, the base may have a bias channel for connecting a bias wire to the connection portion, and the bias channel provides insulation to the base to prevent leakage.

[0012] The MPCVD carrier described above also includes an insulating component, which comprises: a first insulating element disposed between the bias conductive element, the base, and the heat insulation plate; and / or a second insulating element disposed on the outer periphery of the abutment and abutting against the abutment. For example, the first and / or second insulating elements may be made of ceramic, possessing superior heat resistance and insulation properties. By providing the first and / or second insulating elements, leakage current at the outer periphery of the abutment and / or the base can be effectively prevented.

[0013] The MPCVD carrier described above also includes a heat insulation component, comprising: a first heat insulation screen disposed on the outer periphery of the heater; and a second heat insulation screen disposed between the first heat insulation screen and the bias conductive element, wherein the heat resistance of the second heat insulation screen is configured to be lower than that of the first heat insulation screen. For example, the first heat insulation screen is made of a high-temperature resistant metal, such as molybdenum, which can maintain its original shape without deformation under high-temperature conditions, thereby providing good heat insulation. Since the heat received is higher closer to the center of the heater, when the first heat insulation screen blocks most of the heat, the heat conducted to the area where the second heat insulation screen is located is relatively low. Therefore, the second heat insulation screen can be made of a material with slightly lower heat resistance than the first heat insulation screen.

[0014] In the aforementioned MPCVD carrier, the second heat shield comprises multiple heat shield rings, which are vertically joined together to form the second heat shield. It is understood that since the area closer to the substrate experiences higher heat and exhibits a temperature gradient in the vertical direction, the second heat shield can be configured from top to bottom as an assembly of multiple heat shield rings to prevent it from cracking due to the temperature gradient, thereby improving its heat resistance.

[0015] In the aforementioned MPCVD carrier, the second heat shield is made of ceramic. Although ceramic's heat resistance is not as good as molybdenum's, it also possesses superior insulation properties, achieving both heat insulation and prevention of electrical leakage.

[0016] In the aforementioned MPCVD carrier, a first shielding groove is provided on the side of the base near the heater. This first shielding groove is used to shield microwaves. It is understood that by providing a first shielding groove on the side of the base near the heater, microwaves can be prevented from diffusing downwards along the base, thus improving the safety of the operating environment.

[0017] In the aforementioned MPCVD carrier, a shielding sleeve is provided around the bias wires to shield against microwaves. It is understood that by providing a shielding sleeve around the bias wires, microwaves are further shielded, improving the safety of the operating environment.

[0018] Another objective of this application is to provide an MPCVD apparatus, comprising: the aforementioned MPCVD carrier; and a microwave cavity assembly, the microwave cavity assembly including a housing, a mounting flange within the housing, the MPCVD carrier disposed within the mounting flange, and a second shielding groove on the mounting flange near the base, the second shielding groove being used to shield microwaves. It is understood that the microwave cavity assembly primarily uses microwaves to excite reactive gases to form plasma. Specifically, the microwave cavity assembly includes a housing, within which a cavity is formed, through which reactive gases and microwaves can be introduced. The center of the mounting flange within the housing is used to accommodate the MPCVD carrier of this application. The second shielding groove is provided between the mounting flange and the base to prevent microwave leakage from this assembly gap, further improving the safety of the operating environment.

[0019] Compared with the prior art, this application has the following beneficial effects:

[0020] 1. This application provides a heating and bias environment for the base by setting up heating components and bias components, thereby ensuring that the plasma concentration above the base is basically consistent with the optimal concentration required for heterogeneous nucleation of diamond, which can effectively improve the heterogeneous single crystal nucleation efficiency of diamond.

[0021] 2. This application configures the bias conductive element in a ring or cylindrical shape, which is simultaneously enclosed by the top base and the bottom heat insulation plate, thereby transmitting bias current while preventing microwaves from entering the shielding cavity and causing damage to the heater.

[0022] 3. This application improves the heat resistance of the second heat insulation screen by configuring the second heat insulation screen as a combination of multiple heat insulation rings spliced ​​together from top to bottom, thereby preventing the second heat insulation screen from breaking due to temperature gradient difference.

[0023] 4. By setting up shielding structures such as the first shielding groove, the shielding sleeve, and the second shielding groove, this application can shield microwave leakage from the microwave cavity assembly, thereby providing better safety for the operator's operating environment. Attached Figure Description

[0024] Figure 1 This is a three-dimensional structural diagram of the MPCVD carrier of this application;

[0025] Figure 2 This is a cross-sectional structural diagram of the MPCVD carrier of this application;

[0026] Figure 3 yes Figure 2 Enlarged structural diagram of region A in the middle;

[0027] Figure 4 This is a three-dimensional structural schematic diagram of the bias conductive component of this application;

[0028] Figure 5 This is a cross-sectional structural schematic diagram of the MPCVD apparatus of this application;

[0029] Figure 6 yes Figure 5 A magnified structural diagram of region B in the middle;

[0030] In the figure, 100 is the base; 200 is the heating assembly; 210 is the heater; 220 is the heating electrode; 230 is the connecting plate; 240 is the connecting column; 300 is the biasing assembly; 310 is the biasing conductive element; 311 is the surrounding part; 312 is the connecting part; 320 is the biasing wire; 321 is the shielding sleeve; 400 is the base; 410 is the first shielding groove; 500 is the heat insulation plate; 600 is the shielding cavity; 700 is the insulation assembly; 710 is the first insulating element; 720 is the second insulating element; 800 is the heat insulation assembly; 810 is the first heat insulation screen; 820 is the second heat insulation screen; 821 is the heat insulation ring; 900 is the microwave cavity assembly; 910 is the shell; 920 is the mounting flange; and 921 is the second shielding groove. Detailed Implementation

[0031] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0032] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0033] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0034] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0035] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0036] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only embodiments.

[0037] Please refer to the attached diagram in the instruction manual. Figures 1-3 The MPCVD carrier of this application includes: a base 100, a heating assembly 200, and a bias assembly 300. The base 100 is used to support the workpiece. The heating assembly 200 includes a heater 210 and a heating electrode 220. The heater 210 is disposed below the base 100 and is used to supply heat to the base 100. The heating electrode 220 is electrically connected to the heater 210. The bias assembly 300 includes a bias conductor 310 and a bias wire 320. The bias conductor 310 is disposed on the outer periphery of the heater 210 and is electrically connected to the base 100. The bias wire 320 is electrically connected to the bias conductor 310.

[0038] Understandably, a diamond growth substrate can be placed on the stage 100, and a heating assembly 200 is arranged below the stage 100 to provide heat to the stage 100. Specifically, the heating assembly 200 includes a heater 210 and a heating electrode 220. The heating electrode 220 can be connected to a heating power supply to supply electrical energy to the heater 210, which then releases heat. The bias assembly 300 includes a bias conductor 310 and a bias wire 320. The bias wire 320 can be connected to a bias power supply to transfer current to the bias conductor 310, which then transfers it to the stage 100, thus making the stage 100 present a negative bias. With this implementation, under optimal temperature and bias control, the plasma concentration formed on the stage 100 is basically consistent with the concentration required for heterogeneous diamond nucleation, which can effectively improve the heterogeneous single-crystal nucleation efficiency of diamond.

[0039] Continue to refer to Figure 1 and Figure 3 In some embodiments, a connecting plate 230 is further provided between the heater 210 and the heating electrode 220. Connecting posts 240 are provided on the connecting plate 230. The connecting plate 230 is connected to both the heating electrode 220 and the connecting posts 240, and the connecting posts 240 are connected to both the connecting plate 230 and the heater 210. For example, multiple connecting posts 240 are provided. By providing multiple connecting posts 240, the heater 210 can be stably supported, ensuring the flatness of the heater 210 and thus improving the heating uniformity of the heater 210 on the base 100. Furthermore, the position of the heater 210 can be indirectly adjusted by adjusting the position of the connecting plate 230 or the connecting posts 240, thereby controlling the heating temperature or other factors, and the stability of the adjustment process can also be guaranteed accordingly.

[0040] like Figure 1 As shown, in some embodiments, a shielding sleeve 321 is provided around the bias wire 320, which is used to shield microwaves. It can be understood that by providing a shielding sleeve 321 around the bias wire 320, microwaves are further shielded, improving the safety of the operating environment.

[0041] See Figure 1 and Figure 3In some embodiments, a base 400 is provided below the bias conductive element 310, and a heat insulation plate 500 is provided on the base 400. A shielding cavity 600 is formed between the heat insulation plate 500, the bias conductive element 310, and the base 100, and the heater 210 is placed inside the shielding cavity 600. For example, the bias conductive element 310 is annular, which can simultaneously enclose the shielding cavity 600 with the top base 100 and the bottom heat insulation plate 500, thereby transmitting bias current while preventing microwaves from entering the shielding cavity 600 and damaging the heater 210. Alternatively, the bias conductive element 310 can be cylindrical, directly enclosing the shielding cavity 600 with the top base 100, which can achieve the same effect.

[0042] Continue to refer to Figure 3 In some embodiments, an insulating component 700 is also included, comprising a first insulating element 710 and / or a second insulating element 720. The first insulating element 710 is disposed between the bias conductive element 310, the base 400, and the heat insulation plate 500, and the second insulating element 720 is disposed on the outer periphery of the base 100 and abuts against the base 100. For example, the first insulating element 710 and / or the second insulating element 720 may be made of ceramic, which has better heat resistance and insulation properties. By providing the first insulating element 710 and / or the second insulating element 720, leakage current at the outer periphery of the base 100 and / or the outer periphery of the base 400 can be effectively prevented.

[0043] Continue to refer to Figure 3 In some embodiments, a heat insulation component 800 is also included, comprising a first heat insulation screen 810 and a second heat insulation screen 820. The first heat insulation screen 810 is disposed on the outer periphery of the heater 210, and the second heat insulation screen 820 is disposed between the first heat insulation screen 810 and the bias conductive element 310. The heat resistance of the second heat insulation screen 820 is configured to be lower than that of the first heat insulation screen 810. For example, the first heat insulation screen 810 is made of a high-temperature resistant metal, such as molybdenum, which can maintain its original shape without deformation under high-temperature conditions, thereby providing good heat insulation effect. Since the heat received is higher closer to the center of the heater 210, when the first heat insulation sheet blocks most of the heat, the heat conducted to the area where the second heat insulation screen 820 is located is relatively low. Therefore, the second heat insulation screen 820 can be made of a material with slightly lower heat resistance than the first heat insulation sheet.

[0044] In some embodiments, the second heat insulation screen 820 includes a plurality of heat insulation rings 821, which are vertically joined together to form the second heat insulation screen 820. It is understood that since the area closer to the base 100 experiences higher heat and exhibits a temperature gradient difference in the vertical direction, the second heat insulation screen 820 can be configured from top to bottom as an assembly of multiple heat insulation rings 821 to prevent it from cracking due to the temperature gradient difference, thereby improving the heat resistance of the second heat insulation screen 820.

[0045] In some embodiments, the second heat shield 820 is made of ceramic. Although ceramic is not as heat-resistant as molybdenum, it also has better insulation properties, which can achieve heat insulation while preventing leakage.

[0046] like Figure 3 As shown, in some embodiments, a first shielding groove 410 is provided on the side of the base 400 near the heater 210, and the first shielding groove 410 is used to shield microwaves. It can be understood that by providing a first shielding groove 410 on the side of the base 400 near the heater 210, microwaves can be prevented from diffusing downwards along the base 400, thereby improving the safety of the operating environment.

[0047] See Figure 4 In some embodiments, the bias conductor 310 includes a surrounding portion 311 and a connecting portion 312. The surrounding portion 311 at least partially surrounds the outer periphery of the heater 210 and is connected to the base 100. The connecting portion 312 is connected to the surrounding portion 311, passes through the base 400, and is connected to the bias wire 320. It is understood that the surrounding portion 311 may be annular or cylindrical, surrounding the heater 210, and the top of the surrounding portion 311 is connected to the base 100 to conduct current. The height and inner diameter of the surrounding portion 311 are closely related to the size of the heater 210. For example, the base 400 may have a bias channel for connecting the bias wire 320 to the connecting portion 312, and the bias channel provides insulation to the base 400 to prevent leakage.

[0048] See Figure 5 and Figure 6The MPCVD apparatus of this application includes an MPCVD carrier and a microwave cavity assembly 900. The microwave cavity assembly 900 includes a housing 910, a mounting flange 920 inside the housing 910, and the MPCVD carrier disposed within the mounting flange 920. A second shielding groove 921 is provided on the side of the mounting flange 920 near the base 100, and the second shielding groove 921 is used to shield microwaves. It is understood that the microwave cavity assembly 900 mainly forms plasma by exciting the reactive gas with microwaves. Specifically, the microwave cavity assembly 900 includes a housing 910, within which a cavity is formed. The cavity can be vented to the reactive gas and to receive microwaves. The mounting flange 920 inside the housing 910 is used to house the MPCVD carrier of this application. The second shielding groove 921 is provided between the mounting flange 920 and the base 100 to prevent microwave leakage from this assembly gap, further improving the safety of the operating environment.

[0049] Beneficial effects:

[0050] This application provides a heating and bias environment for the base 100 by setting up a heating component 200 and a bias component 300, thereby ensuring that the plasma concentration above the base 100 is basically consistent with the optimal concentration required for heterogeneous diamond nucleation, which can effectively improve the heterogeneous single crystal nucleation efficiency of diamond. By configuring the bias conductive component 310 in a ring or cylindrical shape, it simultaneously forms a shielding cavity 600 with the top base 100 and the bottom heat insulation plate 500, thereby transmitting bias current while preventing microwaves from entering the shielding cavity 600 and causing damage to the heater 210. By configuring the second heat insulation screen 820 from top to bottom as a combination of multiple heat insulation rings 821 spliced ​​together, the second heat insulation screen 820 is prevented from breaking due to temperature gradient difference, thereby improving the heat resistance of the second heat insulation screen 820. By setting up shielding structures such as the first shielding groove 410, the shielding sleeve 321, and the second shielding groove 921, microwave leakage of the microwave cavity assembly 900 can be shielded, thereby providing better safety for the operator's operating environment.

[0051] The specific embodiments described herein are merely illustrative examples of the spirit of this application. Those skilled in the art to which this application pertains may make various modifications or additions to the described specific embodiments or use similar methods to substitute them, without departing from the spirit of this application or exceeding the scope defined by the appended claims.

Claims

1. An MPCVD carrier, characterized in that, include: A base (100) for supporting a workpiece; A heating assembly (200), the heating assembly (200) comprising: A heater (210) is disposed below the base (100) for supplying heat to the base (100); A heating electrode (220) electrically connected to the heater (210); and A biasing assembly (300), the biasing assembly (300) comprising: A bias conductor (310) is disposed on the outer periphery of the heater (210) and is electrically connected to the base (100); A bias wire (320) is electrically connected to the bias conductor (310).

2. The MPCVD carrier according to claim 1, characterized in that, A base (400) is provided below the bias conductive element (310), and a heat insulation plate (500) is provided on the base (400). A shielding cavity (600) is formed between the heat insulation plate (500), the bias conductive element (310), and the base (100), and the heater (210) is placed inside the shielding cavity (600).

3. The MPCVD carrier according to claim 2, characterized in that, The bias conductive element (310) includes: A surrounding portion (311) at least partially surrounds the outer periphery of the heater (210) and is connected to the base (100); A connecting part (312) is connected to the surrounding part (311), the connecting part (312) passes through the base (400) and is connected to the bias wire (320).

4. The MPCVD carrier according to claim 2, characterized in that, It also includes an insulation component (700), said insulation component (700) comprising: A first insulating element (710) is disposed between the bias conductive element (310), the base (400), and the heat insulation plate (500); and / or A second insulating member (720) is disposed on the outer periphery of the base (100) and abuts against the base (100).

5. The MPCVD carrier according to claim 1, characterized in that, It also includes a thermal insulation component (800), said thermal insulation component (800) comprising: A first heat insulation screen (810) is disposed on the outer periphery of the heater (210); A second heat insulation screen (820) is disposed between the first heat insulation screen (810) and the bias conductive element (310), and the heat resistance of the second heat insulation screen (820) is configured to be less than that of the first heat insulation screen (810).

6. The MPCVD carrier according to claim 5, characterized in that, The second heat insulation screen (820) includes a plurality of heat insulation rings (821), which are spliced ​​together in the vertical direction to form the second heat insulation screen (820).

7. The MPCVD carrier according to claim 5, characterized in that, The second heat insulation screen (820) is made of ceramic.

8. The MPCVD carrier according to claim 2, characterized in that, The base (400) has a first shielding groove (410) on the side near the heater (210), and the first shielding groove (410) is used to shield microwaves.

9. The MPCVD carrier according to claim 2, characterized in that, The bias wire (320) is provided with a shielding sleeve (321) on its outer periphery, and the shielding sleeve (321) is used to shield microwaves.

10. An MPCVD apparatus, characterized in that, include: The MPCVD carrier as described in any one of claims 1-9; A microwave cavity assembly (900) includes a housing (910), a mounting flange (920) is provided inside the housing (910), the MPCVD carrier is disposed inside the mounting flange (920), and a second shielding groove (921) is provided on the side of the mounting flange (920) near the base (100), the second shielding groove (921) is used to shield microwaves.

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