Semiconductor device manufacturing apparatus

Abstract

The embodiment of the utility model provides semiconductor device manufacturing equipment, and the equipment comprises an equipment main body which is internally provided with a reaction chamber for accommodating a wafer; a quartz tube, a quartz tray and a heating lamp tube are arranged in the reaction chamber; the quartz tube is positioned in the middle of the reaction chamber and extends from the front end to the rear end of the reaction chamber; the quartz tray is positioned in the quartz tube and is used for bearing a wafer; the heating lamp tube is arranged on the periphery of the quartz tube; an oxygen content detection device; a detection probe of the oxygen content detection device is inserted into the reaction chamber and is used for detecting the oxygen content of the reaction chamber. The semiconductor device manufacturing equipment is used for detecting the oxygen content of the reaction chamber, real-time detection of the oxygen content in the equipment is achieved, the oxygen leakage condition can be found in time, the product yield is improved, and the production cost is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the semiconductor manufacturing technology, and especially to a semiconductor device manufacturing equipment. BACKGROUND

[0002] Rapid thermal processing (RTP) is an important heat treatment technology, which has a wide application in the manufacturing process of silicon carbide (SiC) power device and radio frequency device. This process can heat the whole silicon wafer to 600-1300℃ in a very short time, compared with the traditional furnace tube annealing method, it has the characteristics of less heat budget, less impurity movement in silicon, less contamination and shorter processing time. In the process of silicon carbide device, rapid annealing can achieve the purposes of metal alloy, impurity activation, lattice repair, etc.

[0003] In the manufacturing process of silicon carbide device, RTP equipment is usually used to form silicide (NiSiliside) in the source-drain region. The environmental requirements of the cavity in this process are very high. The gas flow in the cavity is also an important indicator affecting the quality of metal alloy when the temperature meets the process requirements. Some devices have very high requirements for oxygen content, and more than 10ppm will cause the device to be scrapped. The 8108 manufactured by AG in the United States is a widely used device.

[0004] As shown in Figure 1 The 8108 device mainly includes a quartz tube 2, a quartz tray 3 and two sets of upper and lower longitudinal and transverse staggered heating lamp tubes 4. In the process, first, the inside of the reaction chamber 1 is preheated and filled with 3L-4L of nitrogen, then the wafer 5 is placed on the quartz tray, and 20L of nitrogen is filled into the reaction chamber to ensure that the internal environment of the reaction chamber is free of other residual gases. The heating lamp tube is turned on to start heating. When heating, the flow of nitrogen is adjusted from 20L to 4L-6L to achieve more uniform annealing purposes.

[0005] However, the above-mentioned device cannot monitor the oxygen content in real time. During the use of the reaction chamber, due to the aging of the sealing element or the particle problem, the sealing fails and oxygen leaks. If it cannot be found in time, it will cause the product to be scrapped. At present, only periodic monitoring of the wafer can indirectly know the state of the device. Once it is found that there is a obvious color difference on the edge of the wafer, it is possible that the reaction chamber has leaked, and the device needs to be repaired and maintained. This has a large hysteresis and will cause the production cost to increase. SUMMARY

[0006] In order to solve one of the above technical defects, a semiconductor device manufacturing equipment is provided in the embodiments of the present application.

[0007] According to a first aspect of the embodiments of the present application, a semiconductor device manufacturing equipment is provided, comprising:

[0008] An equipment body, a reaction chamber for accommodating a wafer is arranged in the equipment body; a quartz tube, a quartz tray and a heating lamp are arranged in the reaction chamber; the quartz tube is located in the middle of the reaction chamber and extends from the front end to the rear end of the reaction chamber; the quartz tray is located in the quartz tube and is used for carrying the wafer; and the heating lamp is arranged at the periphery of the quartz tube.

[0009] An oxygen content detection device; a detection probe of the oxygen content detection device is inserted into the reaction chamber and is used for detecting the oxygen content of the reaction chamber.

[0010] The semiconductor device manufacturing equipment as described above further comprises a processor and a display.

[0011] The processor is connected with the oxygen content detection device, is used for acquiring the oxygen content data collected by the oxygen content detection device, and sends the oxygen content data to the display for display.

[0012] The semiconductor device manufacturing equipment as described above further comprises an oxygen content alarm circuit which is electrically connected with the oxygen content detection device; the oxygen content alarm circuit is used for generating an alarm signal when the oxygen content exceeds an upper threshold.

[0013] The semiconductor device manufacturing equipment as described above, the oxygen content alarm circuit comprises an oxygen content switch and a first switch, the oxygen content switch is electrically connected with the first switch; the first switch is connected to an alarm device; when the oxygen content exceeds the upper threshold, the oxygen content switch is actuated to trigger the first switch to generate the alarm signal.

[0014] The semiconductor device manufacturing equipment as described above, the oxygen content switch is a normally open switch.

[0015] The first switch has a coil and a normally closed contact; the oxygen content switch is connected in series with the coil of the first switch, and the normally closed contact of the first switch is connected to the alarm device; when the oxygen content exceeds the upper threshold, the oxygen content switch is closed to make the coil of the first switch electrified, the normally closed contact of the first switch is disconnected, and the alarm signal is generated.

[0016] The semiconductor device manufacturing equipment as described above further comprises an over-temperature switch which is a normally closed switch and is connected in series with the normally closed contact of the first switch.

[0017] The semiconductor device manufacturing equipment as described above further comprises an equipment operation detection unit and a second switch; the second switch has a coil and a normally open contact.

[0018] The normally open contact of the second switch is connected in series with the coil of the oxygen content switch and the first switch and is connected to a power supply.

[0019] The coil of the second switch is connected with the equipment operation detection unit.

[0020] The semiconductor device manufacturing equipment as described above, the equipment operation detection unit comprises: a first comparator, a second comparator and an equipment parameter detector; the output ends of the first comparator and the second comparator are connected with the coil of the second switch;

[0021] The first input end and the second input end of the first comparator are connected with the first preset value output end of the equipment parameter detector and the measured data output end of the equipment parameter detector respectively;

[0022] The first input end and the second input end of the second comparator are connected with the measured data output end of the equipment parameter detector and the second preset value output end of the equipment parameter detector respectively.

[0023] The semiconductor device manufacturing equipment as described above, the equipment parameter detector is a gas flow meter.

[0024] The semiconductor device manufacturing equipment as described above, the equipment parameter detector is a nitrogen flow meter.

[0025] The technical scheme provided by the embodiment of the present application has the reaction chamber for accommodating the wafer in the equipment main body; the oxygen content detector is used, the detection probe of which is inserted into the reaction chamber for detecting the oxygen content of the reaction chamber, so that the oxygen content in the equipment is detected in real time, the oxygen leakage can be found in time, the product yield is improved, and the production cost is reduced. BRIEF DESCRIPTION OF DRAWINGS

[0026] The accompanying drawings, which are included to provide a further understanding of the present application, constitute a part of the present application, the schematic embodiments of the present application and the description thereof serve to explain the present application, and do not constitute an improper limitation on the present application. In the drawings:

[0027] Figure 1 It is a structural schematic view of a semiconductor device production equipment in the related art;

[0028] Figure 2 It is a structural schematic view of a semiconductor device provided by the embodiment of the present application;

[0029] Figure 3 It is a structural schematic view of an oxygen content alarm circuit in a semiconductor device provided by the embodiment of the present application.

[0030] Reference signs:

[0031] 1-reaction chamber; 2-quartz tube; 3-quartz tray; 4-heating lamp; 5-wafer; 6-oxygen content detector; 7-oxygen content alarm circuit. DETAILED DESCRIPTION

[0032] In order to make the technical solutions and advantages of the embodiments of the present application clearer, the exemplary embodiments of the present application are further described in detail below with reference to the drawings. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. It should be noted that the embodiments and features in the embodiments can be combined with each other without conflict.

[0033] The embodiment provides a semiconductor device manufacturing equipment, which can be used for processing wafers, in particular, manufacturing semiconductor devices based on wafers.

[0034] As shown in Figure 2 The semiconductor device manufacturing equipment provided by the embodiment comprises an equipment main body and an oxygen content detection device 6. The equipment main body can refer to Figure 1 , which is provided with a quartz tube 2, a quartz tray 3, a heating lamp 4 and a reaction chamber 1. The reaction chamber 1 is used for accommodating a wafer 5. The wafer 5 is placed in the reaction chamber 1, and nitrogen is introduced into the reaction chamber 1 for processing.

[0035] The detection probe of the oxygen content detection device 6 is inserted into the reaction chamber 1 and used for detecting the oxygen content of the reaction chamber 1. The oxygen content detection device 6 can adopt a detection device commonly used in the prior art. The detection probe of the oxygen content detection device 6 can be inserted into the reaction chamber 1 from the front end, or inserted into the reaction chamber 1 from the rear end, or a hole is opened in the side wall of the reaction chamber 1 to insert the detection probe of the oxygen content detection device 6, or the detection probe is fixed to the flange of the reaction chamber door. It can be understood that the interface part of the detection probe needs to be sealed. The oxygen content detection device 6 with an appropriate range can be selected according to the process requirement.

[0036] The oxygen content detection device 6 can detect the oxygen content in the reaction chamber 1 and convert it into an electrical signal for output and storage. The electrical signal output by the oxygen content detection device 6 corresponds to the oxygen content data.

[0037] The technical solution provided by the embodiment is that the reaction chamber for accommodating the wafer is arranged in the equipment main body, the oxygen content detection device is adopted, the detection probe of the oxygen content detection device is inserted into the reaction chamber, and the oxygen content of the reaction chamber is detected, so that the oxygen content in the equipment is detected in real time, the oxygen leakage can be found in time, the product yield is improved, and the production cost is reduced.

[0038] On the basis of the above technical solution, a processor and a display are further adopted. The processor is connected with the oxygen content detection device 6 and used for acquiring the oxygen content data collected by the oxygen content detection device, and sending the oxygen content data to the display for display. The processor can be an internal processor of the manufacturing equipment machine, and the display can also be a display of the manufacturing equipment machine.

[0039] Specifically, the processor converts the current signal output by the oxygen content detection device 6 into a 0V-5V signal consistent with the flow voltage of the manufacturing equipment. It then selects the MFC signal channel of the equipment to allow for intuitive viewing of the oxygen content curve on the equipment's process interface. Furthermore, it can save and query historical curves, facilitating process analysis and historical curve traceability.

[0040] Based on the above technical solution, the manufacturing equipment also includes: an oxygen content alarm circuit 7, electrically connected to the oxygen content detection device 6. The oxygen content alarm circuit 7 is used to generate an alarm signal when the oxygen content exceeds the upper limit threshold. The oxygen content alarm circuit 7 can be a hardware circuit built using conventional circuit components.

[0041] One implementation is as follows: the oxygen content alarm circuit 7 includes an oxygen content switch and a first switch, wherein the oxygen content switch is electrically connected to the first switch, and the first switch is connected to an alarm device. When the oxygen content exceeds the upper limit threshold, the oxygen content switch activates, triggering the first switch to generate an alarm signal.

[0042] Specifically, the oxygen content switch is a normally open switch. The first switch has a coil and a normally closed contact; the oxygen content switch is connected in series with the coil of the first switch, and the normally closed contact of the first switch is connected to the alarm device. When the oxygen content exceeds the upper limit threshold, the oxygen content switch closes, energizing the coil of the first switch, opening the normally closed contact of the first switch, and generating an alarm signal.

[0043] like Figure 3 As shown, an oxygen content switch S1 and a first switch K1 are used. The oxygen content switch S1 is a normally open switch and is connected to the oxygen content detection device 6. When the oxygen content detection device 6 detects that the oxygen content value is too high, the oxygen content switch S1 is closed.

[0044] The first switch K1 has a coil and a normally closed contact. The coil is connected in series with the oxygen content switch S1. The normally closed contact is connected to the manufacturing equipment. When the oxygen content of the manufactured part is normal (e.g., less than 8 ppm), a high-level signal is sent to the equipment through the normally closed contact. When the oxygen content of the manufactured part is abnormal (e.g., greater than 8 ppm), the oxygen content switch S1 closes, the coil of the first switch K1 is energized, the normally closed contact of the first switch K1 opens, and the normally closed contact receives a low-level signal to the corresponding port of the equipment, thus generating an alarm signal to alert the operator that the oxygen content in the manufacturing equipment is abnormal.

[0045] The above circuit can be constructed using appropriate circuit components, or it can be modified from the existing circuitry of the machine tool. For example, it can be modified using the existing over-temperature switch protection circuit of the machine tool. The over-temperature switch S2 is a normally closed switch, connected in series with the normally closed contact of the first switch K1. When the equipment is operating normally, it sends a high-level signal to the machine tool; when the equipment temperature is too high, the over-temperature switch S2 opens, and the corresponding port signal of the machine tool becomes low-level, generating an alarm signal. This method can utilize the existing over-temperature protection circuit of the machine tool, saving circuit components and reducing production costs.

[0046] Based on the above technical solution, the manufacturing equipment further includes: an equipment operation detection unit and a second switch K2, which has a coil and a normally open contact. The normally open contact of the second switch K2 is connected in series with the oxygen content switch S1 and the coil of the first switch K1, and is connected to the power supply VCC. The coil of the second switch K2 is connected to the equipment operation detection unit.

[0047] The equipment operation detection unit is used to detect whether the manufacturing equipment is operating normally. It can detect parameters such as the content, flow rate, pressure, and heating power of the gas introduced into the equipment, as well as parameters such as the reaction temperature inside the equipment. For example, in the process of manufacturing silicon carbide devices, the flow rate of nitrogen or argon can be detected. When the detected parameters are normal, the coil of the second switch K2 is energized, the normally open contact of the second switch K2 closes, and the alarm function of the oxygen content switch S1 is activated.

[0048] One implementation involves a device operation detection unit comprising a first comparator C1, a second comparator C2, and a device parameter detector. The device parameter detector can be a sensor or a corresponding processor, and has an output interface capable of providing data to the comparators. The device parameter detector can be a gas flow meter used to detect the gas flow rate within the reaction chamber. In this embodiment, a nitrogen flow meter is used as the parameter detector to detect the nitrogen flow rate in the reaction chamber.

[0049] The outputs of both the first comparator C1 and the second comparator C2 are connected to the coil of the second switch K2. The first input and the second input of the first comparator C1 are respectively connected to the first preset value output and the measured data output of the equipment parameter detector. The data output from the first preset value output can be the nitrogen flow voltage Vref1 output by the gas flow meter during equipment preheating, with a value range of 0.75V-1V. The data output from the measured data output can be the nitrogen flow voltage Vi detected and output by the gas flow meter during the process, with a value range of 1.25V-2.5V.

[0050] The first input terminal and the second input terminal of the second comparator C2 are respectively connected to the measured data output terminal of the device parameter detector and the second preset value output terminal of the device parameter detector. The data output by the second preset value output terminal can be the flow voltage Vref2 of nitrogen output by the gas flowmeter before the formal heating process of the device, and its value range is 5V - 6V.

[0051] In the above solution, the first comparator C1 compares the flow voltage of nitrogen output by the gas flowmeter during the device preheating with the flow voltage of nitrogen detected and output by the gas flowmeter during the process. The second comparator C2 compares the flow voltage of nitrogen output by the gas flowmeter before the formal heating process of the device with the flow voltage of nitrogen detected and output by the gas flowmeter during the process. When Vref1 < Vi < Vref2, the output terminals Vo of the first comparator C1 and the second comparator C2 are both at high level, the coil of the second switch K2 is powered on, and the normally open contact of the second switch K2 closes, introducing the alarm signal of the oxygen content switch S1 into the circuit. When Vi < Vref1 or Vi > Vref2, the output terminals Vo of the first comparator C1 and the second comparator C2 are at low level, the coil of the first switch K2 is disconnected, and the oxygen content switch S1 becomes ineffective.

[0052] The above solution can also detect the nitrogen flow of the device, and only generate an oxygen content alarm when the nitrogen flow meets the requirements, so as to reduce false alarms and improve the accuracy of device detection.

[0053] The above solution adopts a device interlock signal circuit. When the oxygen content in the reaction chamber of the device exceeds the standard during the process, it can interrupt the signal for starting the device process in real time, greatly reducing product abnormalities caused by oxygen leakage, thereby reducing raw material waste and production costs.

[0054] In the description of this application, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to this application.

[0055] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0056] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication between two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0057] Although preferred embodiments of this application have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this application.

[0058] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A semiconductor device manufacturing apparatus, characterized in that, include: The main body of the equipment contains a reaction chamber for holding wafers; the reaction chamber contains a quartz tube, a quartz tray, and heating lamps; the quartz tube is located in the middle of the reaction chamber and extends from the front end to the rear end of the reaction chamber; the quartz tray is located inside the quartz tube and is used to support the wafers; the heating lamps are arranged around the quartz tube. An oxygen content detection device; the detection probe of the oxygen content detection device is inserted into the reaction chamber to detect the oxygen content in the reaction chamber.

2. The semiconductor device manufacturing equipment according to claim 1, characterized in that, Also includes: Processor and display; The processor is connected to the oxygen content detection device to acquire the oxygen content data collected by the oxygen content detection device and send the oxygen content data to the display for display.

3. The semiconductor device manufacturing equipment according to claim 1, characterized in that, Also includes: An oxygen content alarm circuit is electrically connected to an oxygen content detection device; the oxygen content alarm circuit is used to generate an alarm signal when the oxygen content exceeds the upper limit threshold.

4. The semiconductor device manufacturing equipment according to claim 3, characterized in that, The oxygen content alarm circuit includes: an oxygen content switch and a first switch, the oxygen content switch and the first switch being electrically connected; the first switch being connected to an alarm device; when the oxygen content exceeds the upper limit threshold, the oxygen content switch is activated to trigger the first switch to generate an alarm signal.

5. The semiconductor device manufacturing equipment according to claim 4, characterized in that, The oxygen content switch is a normally open switch; The first switch has a coil and a normally closed contact; the oxygen content switch is connected in series with the coil of the first switch, and the normally closed contact of the first switch is connected to the alarm device; when the oxygen content exceeds the upper limit threshold, the oxygen content switch closes to energize the coil of the first switch, and the normally closed contact of the first switch opens to generate an alarm signal.

6. The semiconductor device manufacturing equipment according to claim 4, characterized in that, Also includes: The over-temperature switch is a normally closed switch, connected in series with the normally closed contact of the first switch.

7. The semiconductor device manufacturing equipment according to claim 4, characterized in that, Also includes: Equipment operation detection unit and second switch; the second switch has a coil and normally open contacts; The normally open contact of the second switch is connected in series with the oxygen content switch and the coil of the first switch, and is connected to the power supply. The coil of the second switch is connected to the equipment operation detection unit.

8. The semiconductor device manufacturing equipment according to claim 7, characterized in that, The equipment operation detection unit includes: a first comparator, a second comparator, and an equipment parameter detector; the output terminals of both the first and second comparators are connected to the coil of the second switch. The first input terminal and the second input terminal of the first comparator are respectively connected to the first preset value output terminal and the measured data output terminal of the device parameter detector. The first and second input terminals of the second comparator are respectively connected to the measured data output terminal of the device parameter detector and the second preset value output terminal of the device parameter detector.

9. The semiconductor device manufacturing equipment according to claim 8, characterized in that, The device parameter detector is a gas flow meter.

10. The semiconductor device manufacturing equipment according to claim 8, characterized in that, The device parameter detector is a nitrogen flow meter.

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