Thermal field isolation device capable of reducing oxygen content of silicon single crystal
By setting up nested connections of quartz chucks and graphite cups, as well as fixed connections of positioning rings and fixing rings inside the single crystal furnace, the problem of high oxygen content caused by local temperature control of the hot field heater in the prior art is solved, and high purity and stable growth of single crystal silicon is achieved.
Patent Information
- Application Number
- CN202422660285.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-01
- Publication Date
- 2025-12-12
- Estimated Expiration
- 2034-11-01
AI Technical Summary
The existing hot zone uses two heaters, a main heater and a bottom heater, for heating. During the crystal pulling process, the height and structure of the main heater ring can only control the temperature locally, which means that crystal pulling stability and oxygen content cannot be achieved simultaneously, resulting in high oxygen content.
A thermal isolation device for reducing the oxygen content of silicon single crystals was designed. This device consists of components such as an insulation cylinder, main heater, furnace bottom tray, bottom heater, crucible shaft, crucible tray, graphite crucible, quartz crucible, quartz chuck, and graphite cup inside the single crystal furnace. The nested connection of the quartz chuck and graphite cup and the arc groove design, combined with the fixed connection of positioning ring, fixing ring and support rod, ensure thermal isolation and stability.
It effectively isolates the thermal field, prevents energy loss and temperature fluctuations, maintains a stable melt temperature and a uniform crystallization process, improves the purity and quality of monocrystalline silicon, ensures the stability and consistency of monocrystalline silicon growth, reduces oxygen content, and improves the operating efficiency and stability of the equipment.
Smart Images
Figure CN223660277U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to single crystal furnace related technical field, concretely relates to a heat field isolation device capable of reducing oxygen content of silicon single crystal. BACKGROUND
[0002] Single crystal furnace is usually referred to as the equipment or facility for preparing single crystal silicon, especially in the semiconductor industry and photovoltaic industry, these furnaces are designed to control the growth process of silicon melt under high temperature environment to produce high-purity, high-crystalline quality single crystal silicon rod or silicon ingot, the design and operation of single crystal furnace have important influence on the quality and performance of final product in the production process of single crystal silicon, in order to adapt to the industry development and market demand, N-type single crystal high-efficiency cell has been the industry trend, how to reduce the oxygen content of single crystal quality is the key research direction of each single crystal enterprise.
[0003] The existing heat field adopts main and bottom two heaters to heat, in the crystal pulling process, the height and structure of the main heater ring provide horizontal and vertical gradient ability, but single main heating can only carry out local temperature control, the stability of crystal pulling and oxygen content cannot be both, and the oxygen content is high. UTILITY MODEL CONTENT
[0004] The utility model discloses a heat field isolation device capable of reducing oxygen content of silicon single crystal to solve the problem that the existing heat field adopts main and bottom two heaters to heat in the background art, in the crystal pulling process, the height and structure of the main heater ring provide horizontal and vertical gradient ability, but single main heating can only carry out local temperature control, the stability of crystal pulling and oxygen content cannot be both, and the oxygen content is high.
[0005] To achieve the above object, the utility model provides the following technical scheme: a heat field isolation device capable of reducing oxygen content of silicon single crystal, including single crystal furnace,
[0006] The heat preservation cylinder is arranged at the internal position of the single crystal furnace, the main heater is arranged at the middle inner side position of the heat preservation cylinder, the furnace bottom tray is arranged at the bottom position of the heat preservation cylinder, the bottom heater is arranged at the position above the furnace bottom tray, the crucible shaft is arranged at the position above the furnace bottom tray, the crucible tray is arranged at the position above the crucible shaft, the graphite crucible is arranged at the position above the crucible tray, and the quartz crucible is arranged at the internal position of the graphite crucible.
[0007] The quartz chuck is arranged at the position above the quartz crucible, the bottom disc is arranged at the bottom position of the quartz chuck, the graphite cup is arranged below the quartz chuck, and the graphite cup is made of ultrapure flexible graphite.
[0008] Preferably, the quartz chuck is provided with an upper disc at the upper position, the bottom disc is provided with an arc groove at the upper position, and the arc groove is arranged in a circular array with three.
[0009] Preferably, the graphite cup is provided with a cup rim at the top position, and the quartz chuck is connected with the graphite cup in a nested manner through the arc groove and the cup rim.
[0010] Preferably, the bottom disc is provided with a bayonet at the middle position of the bottom, and the bayonet is connected with the upper rim of the quartz crucible in a clamping manner.
[0011] Preferably, the quartz chuck is provided with a positioning ring at the inner side position, the positioning ring is provided with a fixing ring at the bottom position, and the bottom disc is provided with a placing groove at the inner position.
[0012] Preferably, the placing groove corresponds to the positioning ring, the positioning ring and the fixing ring are fixedly connected through a support rod, and the fixing ring corresponds to the inner diameter of the bottom of the quartz crucible.
[0013] Preferably, the upper disc and the bottom disc are connected in a nested manner, and the placing groove is provided with positioning grooves corresponding to the support rod at the left and right sides.
[0014] Compared with the prior art, the heat field isolation device provided by the utility model can reduce the oxygen content of silicon single crystal, and has the following beneficial effects:
[0015] 1. Through the arrangement of the quartz chuck, the bottom disc, the graphite cup, the upper disc, the arc groove, the cup rim and the bayonet, the nested connection of the graphite cup and the quartz chuck and the design of the arc groove, the heat field can be effectively isolated, energy loss and temperature fluctuation can be prevented, the stable melt temperature and the uniform crystallization process can be maintained, the graphite cup is made of ultra-pure flexible graphite and has excellent high-temperature resistance and chemical stability, can stably withstand the silicon melt under high temperature for a long time, helps to improve the purity and quality of the silicon single crystal, the design of the bottom disc and the bayonet makes the whole structure stable under high temperature and mechanical vibration conditions, ensures that the position of the quartz crucible and the graphite cup does not change, thereby ensuring the uniformity and consistency of the single crystal silicon growth, the arrangement of the positioning ring, the fixing ring and the support rod enables the quartz chuck and the bottom disc to be simply and reliably installed and fixed, improves the operation efficiency and stability of the equipment, meanwhile, the graphite cup isolates the contact between quartz and silicon liquid, reduces the reaction, effectively isolates the oxygen from entering the growth interface, better transfers heat, and saves power consumption.
[0016] 2、Through the setting of the positioning ring, the fixing ring, the placing groove and the supporting rod, the accurate position of the quartz crucible is ensured by the setting of the positioning ring and the fixing ring, the quartz crucible cannot be moved due to high temperature or mechanical vibration, the stability and consistency in the single crystal silicon growth process are beneficial to be maintained, the positioning ring and the fixing ring are fixedly connected through the supporting rod, the stability of the overall structure is enhanced, the installation of the quartz chuck and the bottom disc is more reliable, the quartz chuck and the bottom disc can be stably operated in a high temperature environment for a long time, the design of the positioning ring and the fixing ring makes the installation and maintenance process safer and simpler, and an operator can more easily adjust and maintain the equipment. BRIEF DESCRIPTION OF DRAWINGS
[0017] Figure 1 It is a structural schematic view of the utility model.
[0018] Figure 2 It is a structural schematic view of the bottom disc in the utility model.
[0019] Figure 3 It is a structural schematic view of the positioning ring in the utility model.
[0020] Figure 4 It is a structural schematic view of the quartz chuck in the utility model.
[0021] Figure 5 It is a structural schematic view of the quartz chuck installation in the utility model.
[0022] In the drawing: 1, single crystal furnace;2, heat preservation cylinder;3, crucible tray;4, furnace bottom tray;5, crucible shaft;6, bottom heater;7, graphite crucible;8, main heater;9, quartz crucible;10, quartz chuck;11, bottom disc;12, arc groove;13, placing groove;14, positioning groove;15, positioning ring;16, supporting rod;17, fixing ring;18, upper disc;19, graphite cup;20, cup rim;21, bayonet. DETAILED DESCRIPTION
[0023] The technical scheme in the embodiments of the utility model will be apparently and completely described in combination with the drawings in the embodiments of the utility model, obviously, the described embodiments are only part of the embodiments of the utility model, not all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by the ordinary skilled in the art without creative labor belong to the protection scope of the utility model.
[0024] The utility model provides a kind of heat field isolation device for reducing the oxygen content of silicon single crystal as Figures 1-4 As shown in formula, including single crystal furnace 1;
[0025] The single crystal furnace 1 is provided with a heat preservation cylinder 2 at the inner position, a main heater 8 is arranged at the inner middle position of the heat preservation cylinder 2, a furnace bottom tray 4 is arranged at the bottom position of the heat preservation cylinder 2, a bottom heater 6 is arranged above the furnace bottom tray 4, a crucible shaft 5 is arranged above the furnace bottom tray 4, a crucible tray 3 is arranged above the crucible shaft 5, a graphite crucible 7 is arranged above the crucible tray 3, and a quartz crucible 9 is arranged at the inner position of the graphite crucible 7.
[0026] A quartz chuck 10 is arranged above the quartz crucible 9, a bottom tray 11 is arranged at the bottom position of the quartz chuck 10, a graphite cup 19 is arranged below the quartz chuck 10, and the graphite cup 19 is made of ultra-pure flexible graphite.
[0027] An upper tray 18 is arranged above the quartz chuck 10, an arc groove 12 is arranged above the bottom tray 11, and the arc groove 12 is arranged in a circular array of three.
[0028] A cup edge 20 is arranged at the top position of the graphite cup 19, and the quartz chuck 10 is connected with the graphite cup 19 in a nested manner through the arc groove 12 and the cup edge 20.
[0029] A bayonet 21 is arranged at the bottom middle position of the bottom tray 11, and the bayonet 21 is connected with the upper edge of the quartz crucible 9 in a clamping manner.
[0030] A positioning ring 15 is arranged at the inner position of the quartz chuck 10, a fixing ring 17 is arranged at the bottom position of the positioning ring 15, and a placing groove 13 is arranged at the inner position of the bottom tray 11.
[0031] The placing groove 13 corresponds to the positioning ring 15, the positioning ring 15 and the fixing ring 17 are fixedly connected through a support rod 16, and the fixing ring 17 corresponds to the inner diameter of the bottom of the quartz crucible 9.
[0032] The upper tray 18 and the bottom tray 11 are connected in a nested manner, and the placing groove 13 is provided with positioning grooves 14 corresponding to the support rod 16 at the left and right sides.
[0033] The specific implementation steps of the heat field isolation device for reducing the oxygen content of silicon single crystal in the embodiment are as follows: a main heater 8 is placed at the middle inner side of the insulation cylinder 2 inside the single crystal furnace 1, a furnace bottom tray 4 is placed at the bottom, a bottom heater 6 is arranged above the furnace bottom tray 4, a crucible shaft 5 is installed above the bottom heater 6, a crucible tray 3 is placed on the shaft, a graphite crucible 7 is arranged in the crucible tray 3, a quartz crucible 9 is placed in the graphite crucible 7, a quartz chuck 10 is arranged above the quartz crucible 9, a bottom plate 11 is connected to the bottom of the quartz chuck 10, a graphite cup 19 made of ultra-pure flexible graphite is arranged below the bottom plate 11, the quartz chuck 10 is nested and connected with the graphite cup 19 through an arc groove 12 and a cup rim 20, the sealing and heat field isolation effect are ensured, a bayonet 21 is arranged at the middle position of the bottom of the bottom plate 11 and is connected with the upper edge of the quartz crucible 9 to enhance the structural stability, a positioning ring 15 and a fixing ring 17 are arranged at the inner side of the quartz chuck 10, the fixing ring 17 is arranged at the bottom of the positioning ring 15, the fixing ring 17 is fixedly connected with a placement groove 13 through a support rod 16, the stable position of the quartz crucible 9 is ensured, the single crystal furnace can stably operate during the production process, and the oxygen content in the single crystal silicon is effectively reduced to obtain high-quality single crystal silicon rods or silicon ingots to meet the needs of the semiconductor and photovoltaic industries.
[0034] As shown in Figure 1 and Figure 5 , the quartz chuck 10 is arranged at the upper position of the quartz crucible 9, the bottom plate 11 is arranged at the bottom position of the quartz chuck 10, the graphite cup 19 is arranged below the quartz chuck 10, the graphite cup 19 is made of ultra-pure flexible graphite, the upper plate 18 is arranged at the upper position of the quartz chuck 10, the arc groove 12 is arranged at the upper position of the bottom plate 11, the arc groove 12 is arranged in a ring array with three, the cup rim 20 is arranged at the top position of the graphite cup 19, the quartz chuck 10 is nested and connected with the graphite cup 19 through the arc groove 12 and the cup rim 20, the bayonet 21 is arranged at the middle position of the bottom of the bottom plate 11 and is connected with the upper edge of the quartz crucible 9.
[0035] Preferably, through the nested connection of the graphite cup 19 and the quartz chuck 10 and the design of the arc groove 12, the thermal field can be effectively isolated to prevent energy loss and temperature fluctuations, which is conducive to maintaining a stable melt temperature and a uniform crystallization process. The graphite cup 10 is made of ultra-pure flexible graphite, which has excellent high-temperature resistance and chemical stability, can stably withstand the silicon melt at high temperature for a long time, and helps to improve the purity and quality of the silicon single crystal. The design of the base plate 11 and the socket 21 ensures that the entire structure remains stable under high temperature and mechanical vibration conditions, ensuring that the position of the quartz crucible 9 and the graphite cup 19 does not change, thereby ensuring the uniformity and consistency of the single crystal silicon growth. The positioning ring 15, the fixing ring 17, and the support rod 16 are arranged to allow the quartz chuck 10 and the base plate 11 to be easily and reliably installed and fixed, improving the operating efficiency and stability of the equipment. At the same time, the graphite cup 19 isolates the quartz and the silicon liquid from contact, reduces the reaction, effectively isolates the oxygen from entering the growth interface, and better transfers heat, saving power consumption.
[0036] As shown in Figures 2-4 , the positioning ring 15 is arranged at the inner side of the quartz chuck 10, the fixing ring 17 is arranged at the bottom of the positioning ring 15, the placing groove 13 is arranged at the inner side of the base plate 11, the placing groove 13 corresponds to the positioning ring 15, the positioning ring 15 and the fixing ring 17 are fixedly connected through the support rod 16, and the fixing ring 17 corresponds to the inner diameter of the bottom of the quartz crucible 9.
[0037] Preferably, the positioning ring 15 and the fixing ring 17 ensure the accurate position of the quartz crucible 9 and prevent it from moving due to high temperature or mechanical vibration, which is conducive to maintaining the stability and consistency during the growth of the single crystal silicon. The positioning ring 15 and the fixing ring 17 are fixedly connected through the support rod 16, which enhances the stability of the overall structure and makes the installation of the quartz chuck 10 and the base plate 22 more reliable, allowing them to operate stably in a high-temperature environment for a long time. The design of the positioning ring 15 and the fixing ring 17 makes the installation and maintenance process safer and simpler, and the operator can adjust and maintain the equipment more easily.
[0038] As shown in Figures 1-5 , the upper plate 18 and the base plate 11 are nested, and the placing groove 13 has positioning grooves 14 corresponding to the support rods 16 on both sides.
[0039] Optionally, the nested connection design ensures the tight connection between the upper plate 18 and the base plate 11, so that the entire structure can remain stable in a high-temperature environment and is not prone to loosening or displacement. The positioning grooves 14 allow the support rods 16 to be easily inserted, simplifying the assembly process and routine maintenance operation of the equipment and improving the convenience and safety of the operation. The positioning grooves 14 ensure that the support rods 16 are in the correct position while enhancing the stability and durability of the overall structure, effectively prolonging the service life of the equipment.
[0040] Finally, it should be noted that: the above only for the preferred embodiments of the present application, and is not intended to limit the present application, although the foregoing embodiments of the present application has been described in detail, for the skilled in the art, it still can be modified, or for part of the technical features of the equivalent replacement, the spirit and principles of the present application, made any modification, equivalent replacement, improvement, etc., should be included within the scope of the present application.
Claims
1. A heat field isolation device for reducing the oxygen content of a silicon single crystal, comprising a single crystal furnace (1); A heat preservation cylinder (2) is arranged at a position inside the single crystal furnace (1), a main heater (8) is arranged at a position inside the heat preservation cylinder (2), a furnace bottom dolly (4) is arranged at a position at the bottom of the heat preservation cylinder (2), a bottom heater (6) is arranged above the furnace bottom dolly (4), a crucible shaft (5) is arranged above the furnace bottom dolly (4), a crucible dolly (3) is arranged above the crucible shaft (5), a graphite crucible (7) is arranged above the crucible dolly (3), and a quartz crucible (9) is arranged inside the graphite crucible (7). characterized in that A quartz chuck (10) is arranged above the quartz crucible (9), a bottom plate (11) is arranged at a position at the bottom of the quartz chuck (10), a graphite cup (19) is arranged below the quartz chuck (10), and the graphite cup (19) is made of ultra-pure flexible graphite.
2. The hot zone isolation apparatus of claim 1, wherein: An upper plate (18) is arranged above the quartz chuck (10), an arc groove (12) is arranged above the bottom plate (11), and the arc groove (12) is arranged in a circular array with three.
3. The hot zone isolation apparatus of claim 2, wherein: the graphite ring is made of a material having a thermal conductivity of at least 200 W / m-K. A cup rim (20) is arranged at a position at the top of the graphite cup (19), and the quartz chuck (10) is connected with the graphite cup (19) in a nested manner through the arc groove (12) and the cup rim (20).
4. The hot zone isolation apparatus of claim 3, wherein: A bayonet (21) is arranged at a position at the bottom of the bottom plate (11), and the bayonet (21) is connected with the upper rim of the quartz crucible (9) in a clamping manner.
5. The hot zone isolation apparatus of claim 4, wherein: A positioning ring (15) is arranged at a position inside the quartz chuck (10), a fixing ring (17) is arranged at a position at the bottom of the positioning ring (15), and a placement groove (13) is arranged at a position inside the bottom plate (11).
6. The hot zone isolation apparatus of claim 5, wherein: The placement groove (13) corresponds to the positioning ring (15), the positioning ring (15) and the fixing ring (17) are fixedly connected through a support rod (16), and the fixing ring (17) corresponds to the inner diameter of the bottom of the quartz crucible (9).
7. The hot zone isolation apparatus of claim 6, wherein: The upper plate (18) and the bottom plate (11) are connected in a nested manner, and positioning grooves (14) corresponding to the support rod (16) are respectively arranged at left and right sides of the placement groove (13).